A Low-Power Voltage Reference Cell with a 1.5 V Output
A low-power voltage reference cell for system-on-a-chip applications is presented in this paper. The proposed cell uses a combination of standard transistors and thick-oxide transistors to generate a voltage above 1 V. A design procedure is also presented for minimizing the temperature coefficient (...
Ausführliche Beschreibung
Autor*in: |
Mir Mohammad Navidi [verfasserIn] David W. Graham [verfasserIn] |
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Format: |
E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2018 |
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Übergeordnetes Werk: |
In: Journal of Low Power Electronics and Applications - MDPI AG, 2011, 8(2018), 2, p 19 |
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Übergeordnetes Werk: |
volume:8 ; year:2018 ; number:2, p 19 |
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DOI / URN: |
10.3390/jlpea8020019 |
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Katalog-ID: |
DOAJ025960598 |
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10.3390/jlpea8020019 doi (DE-627)DOAJ025960598 (DE-599)DOAJ468daf3b17404b3b951167835454b766 DE-627 ger DE-627 rakwb eng TK4001-4102 Mir Mohammad Navidi verfasserin aut A Low-Power Voltage Reference Cell with a 1.5 V Output 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A low-power voltage reference cell for system-on-a-chip applications is presented in this paper. The proposed cell uses a combination of standard transistors and thick-oxide transistors to generate a voltage above 1 V. A design procedure is also presented for minimizing the temperature coefficient (TC) of the reference voltage. This circuit was fabricated in a standard 0.35 μm complementary metal-oxide-semiconductor (CMOS) process. It generates a 1.52 V output with a TC of 42 ppm/∘C from -70 ∘C to 85 ∘C while consuming only 1.11 μW. voltage reference low power temperature dependence CMOS integrated circuits analog integrated circuits Applications of electric power David W. Graham verfasserin aut In Journal of Low Power Electronics and Applications MDPI AG, 2011 8(2018), 2, p 19 (DE-627)718295641 (DE-600)2662567-2 20799268 nnns volume:8 year:2018 number:2, p 19 https://doi.org/10.3390/jlpea8020019 kostenfrei https://doaj.org/article/468daf3b17404b3b951167835454b766 kostenfrei http://www.mdpi.com/2079-9268/8/2/19 kostenfrei https://doaj.org/toc/2079-9268 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 8 2018 2, p 19 |
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10.3390/jlpea8020019 doi (DE-627)DOAJ025960598 (DE-599)DOAJ468daf3b17404b3b951167835454b766 DE-627 ger DE-627 rakwb eng TK4001-4102 Mir Mohammad Navidi verfasserin aut A Low-Power Voltage Reference Cell with a 1.5 V Output 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A low-power voltage reference cell for system-on-a-chip applications is presented in this paper. The proposed cell uses a combination of standard transistors and thick-oxide transistors to generate a voltage above 1 V. A design procedure is also presented for minimizing the temperature coefficient (TC) of the reference voltage. This circuit was fabricated in a standard 0.35 μm complementary metal-oxide-semiconductor (CMOS) process. It generates a 1.52 V output with a TC of 42 ppm/∘C from -70 ∘C to 85 ∘C while consuming only 1.11 μW. voltage reference low power temperature dependence CMOS integrated circuits analog integrated circuits Applications of electric power David W. Graham verfasserin aut In Journal of Low Power Electronics and Applications MDPI AG, 2011 8(2018), 2, p 19 (DE-627)718295641 (DE-600)2662567-2 20799268 nnns volume:8 year:2018 number:2, p 19 https://doi.org/10.3390/jlpea8020019 kostenfrei https://doaj.org/article/468daf3b17404b3b951167835454b766 kostenfrei http://www.mdpi.com/2079-9268/8/2/19 kostenfrei https://doaj.org/toc/2079-9268 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 8 2018 2, p 19 |
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10.3390/jlpea8020019 doi (DE-627)DOAJ025960598 (DE-599)DOAJ468daf3b17404b3b951167835454b766 DE-627 ger DE-627 rakwb eng TK4001-4102 Mir Mohammad Navidi verfasserin aut A Low-Power Voltage Reference Cell with a 1.5 V Output 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A low-power voltage reference cell for system-on-a-chip applications is presented in this paper. The proposed cell uses a combination of standard transistors and thick-oxide transistors to generate a voltage above 1 V. A design procedure is also presented for minimizing the temperature coefficient (TC) of the reference voltage. This circuit was fabricated in a standard 0.35 μm complementary metal-oxide-semiconductor (CMOS) process. It generates a 1.52 V output with a TC of 42 ppm/∘C from -70 ∘C to 85 ∘C while consuming only 1.11 μW. voltage reference low power temperature dependence CMOS integrated circuits analog integrated circuits Applications of electric power David W. Graham verfasserin aut In Journal of Low Power Electronics and Applications MDPI AG, 2011 8(2018), 2, p 19 (DE-627)718295641 (DE-600)2662567-2 20799268 nnns volume:8 year:2018 number:2, p 19 https://doi.org/10.3390/jlpea8020019 kostenfrei https://doaj.org/article/468daf3b17404b3b951167835454b766 kostenfrei http://www.mdpi.com/2079-9268/8/2/19 kostenfrei https://doaj.org/toc/2079-9268 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 8 2018 2, p 19 |
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10.3390/jlpea8020019 doi (DE-627)DOAJ025960598 (DE-599)DOAJ468daf3b17404b3b951167835454b766 DE-627 ger DE-627 rakwb eng TK4001-4102 Mir Mohammad Navidi verfasserin aut A Low-Power Voltage Reference Cell with a 1.5 V Output 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A low-power voltage reference cell for system-on-a-chip applications is presented in this paper. The proposed cell uses a combination of standard transistors and thick-oxide transistors to generate a voltage above 1 V. A design procedure is also presented for minimizing the temperature coefficient (TC) of the reference voltage. This circuit was fabricated in a standard 0.35 μm complementary metal-oxide-semiconductor (CMOS) process. It generates a 1.52 V output with a TC of 42 ppm/∘C from -70 ∘C to 85 ∘C while consuming only 1.11 μW. voltage reference low power temperature dependence CMOS integrated circuits analog integrated circuits Applications of electric power David W. Graham verfasserin aut In Journal of Low Power Electronics and Applications MDPI AG, 2011 8(2018), 2, p 19 (DE-627)718295641 (DE-600)2662567-2 20799268 nnns volume:8 year:2018 number:2, p 19 https://doi.org/10.3390/jlpea8020019 kostenfrei https://doaj.org/article/468daf3b17404b3b951167835454b766 kostenfrei http://www.mdpi.com/2079-9268/8/2/19 kostenfrei https://doaj.org/toc/2079-9268 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 8 2018 2, p 19 |
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TK4001-4102 A Low-Power Voltage Reference Cell with a 1.5 V Output voltage reference low power temperature dependence CMOS integrated circuits analog integrated circuits |
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A Low-Power Voltage Reference Cell with a 1.5 V Output |
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A low-power voltage reference cell for system-on-a-chip applications is presented in this paper. The proposed cell uses a combination of standard transistors and thick-oxide transistors to generate a voltage above 1 V. A design procedure is also presented for minimizing the temperature coefficient (TC) of the reference voltage. This circuit was fabricated in a standard 0.35 μm complementary metal-oxide-semiconductor (CMOS) process. It generates a 1.52 V output with a TC of 42 ppm/∘C from -70 ∘C to 85 ∘C while consuming only 1.11 μW. |
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A low-power voltage reference cell for system-on-a-chip applications is presented in this paper. The proposed cell uses a combination of standard transistors and thick-oxide transistors to generate a voltage above 1 V. A design procedure is also presented for minimizing the temperature coefficient (TC) of the reference voltage. This circuit was fabricated in a standard 0.35 μm complementary metal-oxide-semiconductor (CMOS) process. It generates a 1.52 V output with a TC of 42 ppm/∘C from -70 ∘C to 85 ∘C while consuming only 1.11 μW. |
abstract_unstemmed |
A low-power voltage reference cell for system-on-a-chip applications is presented in this paper. The proposed cell uses a combination of standard transistors and thick-oxide transistors to generate a voltage above 1 V. A design procedure is also presented for minimizing the temperature coefficient (TC) of the reference voltage. This circuit was fabricated in a standard 0.35 μm complementary metal-oxide-semiconductor (CMOS) process. It generates a 1.52 V output with a TC of 42 ppm/∘C from -70 ∘C to 85 ∘C while consuming only 1.11 μW. |
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