Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells

<p<Abstract</p< <p<As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide (SiO<sub<2</sub<) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been...
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Autor*in:	Di Dawei [verfasserIn] Perez-Wurfl Ivan [verfasserIn] Gentle Angus [verfasserIn] Kim Dong-Ho [verfasserIn] Hao Xiaojing [verfasserIn] Shi Lei [verfasserIn] Conibeer Gavin [verfasserIn] Green Martin [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2010

Schlagwörter:	Silicon Quantum dots Solar cells Third generation Electrical characterisation

Übergeordnetes Werk:	In: Nanoscale Research Letters - SpringerOpen, 2007, 5(2010), 11, Seite 1762-1767
Übergeordnetes Werk:	volume:5 ; year:2010 ; number:11 ; pages:1762-1767

Links:	Link aufrufen Link aufrufen Journal toc Journal toc

Katalog-ID:	DOAJ026473895

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allfields	(DE-627)DOAJ026473895 (DE-599)DOAJ63559085924e4b288b10760dbeb82e35 DE-627 ger DE-627 rakwb eng TA401-492 Di Dawei verfasserin aut Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier <p<Abstract</p< <p<As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide (SiO<sub<2</sub<) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation treatments such as phosphoric acid (H<sub<3</sub<PO<sub<4</sub<) etching, nitrogen (N<sub<2</sub<) gas anneal and forming gas (Ar: H<sub<2</sub<) anneal on the cells’ electrical and photovoltaic properties are investigated. The Si QD solar cells studied in this work have achieved an open circuit voltage of 410 mV after various processes. Parameters extracted from dark <it<I</it<–<it<V</it<, light <it<I</it<–<it<V</it< and circular transfer length measurement (CTLM) suggest limiting mechanism in the Si QD solar cell operation and possible approaches for further improvement.</p< Silicon Quantum dots Solar cells Third generation Electrical characterisation Materials of engineering and construction. Mechanics of materials Perez-Wurfl Ivan verfasserin aut Gentle Angus verfasserin aut Kim Dong-Ho verfasserin aut Hao Xiaojing verfasserin aut Shi Lei verfasserin aut Conibeer Gavin verfasserin aut Green Martin verfasserin aut In Nanoscale Research Letters SpringerOpen, 2007 5(2010), 11, Seite 1762-1767 (DE-627)518632474 (DE-600)2253244-4 1556276X nnns volume:5 year:2010 number:11 pages:1762-1767 https://doaj.org/article/63559085924e4b288b10760dbeb82e35 kostenfrei http://dx.doi.org/10.1007/s11671-010-9707-x kostenfrei https://doaj.org/toc/1931-7573 Journal toc kostenfrei https://doaj.org/toc/1556-276X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 5 2010 11 1762-1767
spelling	(DE-627)DOAJ026473895 (DE-599)DOAJ63559085924e4b288b10760dbeb82e35 DE-627 ger DE-627 rakwb eng TA401-492 Di Dawei verfasserin aut Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier <p<Abstract</p< <p<As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide (SiO<sub<2</sub<) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation treatments such as phosphoric acid (H<sub<3</sub<PO<sub<4</sub<) etching, nitrogen (N<sub<2</sub<) gas anneal and forming gas (Ar: H<sub<2</sub<) anneal on the cells’ electrical and photovoltaic properties are investigated. The Si QD solar cells studied in this work have achieved an open circuit voltage of 410 mV after various processes. Parameters extracted from dark <it<I</it<–<it<V</it<, light <it<I</it<–<it<V</it< and circular transfer length measurement (CTLM) suggest limiting mechanism in the Si QD solar cell operation and possible approaches for further improvement.</p< Silicon Quantum dots Solar cells Third generation Electrical characterisation Materials of engineering and construction. Mechanics of materials Perez-Wurfl Ivan verfasserin aut Gentle Angus verfasserin aut Kim Dong-Ho verfasserin aut Hao Xiaojing verfasserin aut Shi Lei verfasserin aut Conibeer Gavin verfasserin aut Green Martin verfasserin aut In Nanoscale Research Letters SpringerOpen, 2007 5(2010), 11, Seite 1762-1767 (DE-627)518632474 (DE-600)2253244-4 1556276X nnns volume:5 year:2010 number:11 pages:1762-1767 https://doaj.org/article/63559085924e4b288b10760dbeb82e35 kostenfrei http://dx.doi.org/10.1007/s11671-010-9707-x kostenfrei https://doaj.org/toc/1931-7573 Journal toc kostenfrei https://doaj.org/toc/1556-276X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 5 2010 11 1762-1767
allfields_unstemmed	(DE-627)DOAJ026473895 (DE-599)DOAJ63559085924e4b288b10760dbeb82e35 DE-627 ger DE-627 rakwb eng TA401-492 Di Dawei verfasserin aut Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier <p<Abstract</p< <p<As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide (SiO<sub<2</sub<) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation treatments such as phosphoric acid (H<sub<3</sub<PO<sub<4</sub<) etching, nitrogen (N<sub<2</sub<) gas anneal and forming gas (Ar: H<sub<2</sub<) anneal on the cells’ electrical and photovoltaic properties are investigated. The Si QD solar cells studied in this work have achieved an open circuit voltage of 410 mV after various processes. Parameters extracted from dark <it<I</it<–<it<V</it<, light <it<I</it<–<it<V</it< and circular transfer length measurement (CTLM) suggest limiting mechanism in the Si QD solar cell operation and possible approaches for further improvement.</p< Silicon Quantum dots Solar cells Third generation Electrical characterisation Materials of engineering and construction. Mechanics of materials Perez-Wurfl Ivan verfasserin aut Gentle Angus verfasserin aut Kim Dong-Ho verfasserin aut Hao Xiaojing verfasserin aut Shi Lei verfasserin aut Conibeer Gavin verfasserin aut Green Martin verfasserin aut In Nanoscale Research Letters SpringerOpen, 2007 5(2010), 11, Seite 1762-1767 (DE-627)518632474 (DE-600)2253244-4 1556276X nnns volume:5 year:2010 number:11 pages:1762-1767 https://doaj.org/article/63559085924e4b288b10760dbeb82e35 kostenfrei http://dx.doi.org/10.1007/s11671-010-9707-x kostenfrei https://doaj.org/toc/1931-7573 Journal toc kostenfrei https://doaj.org/toc/1556-276X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 5 2010 11 1762-1767
allfieldsGer	(DE-627)DOAJ026473895 (DE-599)DOAJ63559085924e4b288b10760dbeb82e35 DE-627 ger DE-627 rakwb eng TA401-492 Di Dawei verfasserin aut Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier <p<Abstract</p< <p<As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide (SiO<sub<2</sub<) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation treatments such as phosphoric acid (H<sub<3</sub<PO<sub<4</sub<) etching, nitrogen (N<sub<2</sub<) gas anneal and forming gas (Ar: H<sub<2</sub<) anneal on the cells’ electrical and photovoltaic properties are investigated. The Si QD solar cells studied in this work have achieved an open circuit voltage of 410 mV after various processes. Parameters extracted from dark <it<I</it<–<it<V</it<, light <it<I</it<–<it<V</it< and circular transfer length measurement (CTLM) suggest limiting mechanism in the Si QD solar cell operation and possible approaches for further improvement.</p< Silicon Quantum dots Solar cells Third generation Electrical characterisation Materials of engineering and construction. Mechanics of materials Perez-Wurfl Ivan verfasserin aut Gentle Angus verfasserin aut Kim Dong-Ho verfasserin aut Hao Xiaojing verfasserin aut Shi Lei verfasserin aut Conibeer Gavin verfasserin aut Green Martin verfasserin aut In Nanoscale Research Letters SpringerOpen, 2007 5(2010), 11, Seite 1762-1767 (DE-627)518632474 (DE-600)2253244-4 1556276X nnns volume:5 year:2010 number:11 pages:1762-1767 https://doaj.org/article/63559085924e4b288b10760dbeb82e35 kostenfrei http://dx.doi.org/10.1007/s11671-010-9707-x kostenfrei https://doaj.org/toc/1931-7573 Journal toc kostenfrei https://doaj.org/toc/1556-276X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 5 2010 11 1762-1767
allfieldsSound	(DE-627)DOAJ026473895 (DE-599)DOAJ63559085924e4b288b10760dbeb82e35 DE-627 ger DE-627 rakwb eng TA401-492 Di Dawei verfasserin aut Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier <p<Abstract</p< <p<As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide (SiO<sub<2</sub<) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation treatments such as phosphoric acid (H<sub<3</sub<PO<sub<4</sub<) etching, nitrogen (N<sub<2</sub<) gas anneal and forming gas (Ar: H<sub<2</sub<) anneal on the cells’ electrical and photovoltaic properties are investigated. The Si QD solar cells studied in this work have achieved an open circuit voltage of 410 mV after various processes. Parameters extracted from dark <it<I</it<–<it<V</it<, light <it<I</it<–<it<V</it< and circular transfer length measurement (CTLM) suggest limiting mechanism in the Si QD solar cell operation and possible approaches for further improvement.</p< Silicon Quantum dots Solar cells Third generation Electrical characterisation Materials of engineering and construction. Mechanics of materials Perez-Wurfl Ivan verfasserin aut Gentle Angus verfasserin aut Kim Dong-Ho verfasserin aut Hao Xiaojing verfasserin aut Shi Lei verfasserin aut Conibeer Gavin verfasserin aut Green Martin verfasserin aut In Nanoscale Research Letters SpringerOpen, 2007 5(2010), 11, Seite 1762-1767 (DE-627)518632474 (DE-600)2253244-4 1556276X nnns volume:5 year:2010 number:11 pages:1762-1767 https://doaj.org/article/63559085924e4b288b10760dbeb82e35 kostenfrei http://dx.doi.org/10.1007/s11671-010-9707-x kostenfrei https://doaj.org/toc/1931-7573 Journal toc kostenfrei https://doaj.org/toc/1556-276X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 5 2010 11 1762-1767
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callnumber-first	T - Technology
author	Di Dawei
spellingShingle	Di Dawei misc TA401-492 misc Silicon misc Quantum dots misc Solar cells misc Third generation misc Electrical characterisation misc Materials of engineering and construction. Mechanics of materials Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells
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topic_title	TA401-492 Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells Silicon Quantum dots Solar cells Third generation Electrical characterisation
topic	misc TA401-492 misc Silicon misc Quantum dots misc Solar cells misc Third generation misc Electrical characterisation misc Materials of engineering and construction. Mechanics of materials
topic_unstemmed	misc TA401-492 misc Silicon misc Quantum dots misc Solar cells misc Third generation misc Electrical characterisation misc Materials of engineering and construction. Mechanics of materials
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title	Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells
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title_sort	impacts of post-metallisation processes on the electrical and photovoltaic properties of si quantum dot solar cells
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title_auth	Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells
abstract	<p<Abstract</p< <p<As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide (SiO<sub<2</sub<) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation treatments such as phosphoric acid (H<sub<3</sub<PO<sub<4</sub<) etching, nitrogen (N<sub<2</sub<) gas anneal and forming gas (Ar: H<sub<2</sub<) anneal on the cells’ electrical and photovoltaic properties are investigated. The Si QD solar cells studied in this work have achieved an open circuit voltage of 410 mV after various processes. Parameters extracted from dark <it<I</it<–<it<V</it<, light <it<I</it<–<it<V</it< and circular transfer length measurement (CTLM) suggest limiting mechanism in the Si QD solar cell operation and possible approaches for further improvement.</p<
abstractGer	<p<Abstract</p< <p<As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide (SiO<sub<2</sub<) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation treatments such as phosphoric acid (H<sub<3</sub<PO<sub<4</sub<) etching, nitrogen (N<sub<2</sub<) gas anneal and forming gas (Ar: H<sub<2</sub<) anneal on the cells’ electrical and photovoltaic properties are investigated. The Si QD solar cells studied in this work have achieved an open circuit voltage of 410 mV after various processes. Parameters extracted from dark <it<I</it<–<it<V</it<, light <it<I</it<–<it<V</it< and circular transfer length measurement (CTLM) suggest limiting mechanism in the Si QD solar cell operation and possible approaches for further improvement.</p<
abstract_unstemmed	<p<Abstract</p< <p<As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide (SiO<sub<2</sub<) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation treatments such as phosphoric acid (H<sub<3</sub<PO<sub<4</sub<) etching, nitrogen (N<sub<2</sub<) gas anneal and forming gas (Ar: H<sub<2</sub<) anneal on the cells’ electrical and photovoltaic properties are investigated. The Si QD solar cells studied in this work have achieved an open circuit voltage of 410 mV after various processes. Parameters extracted from dark <it<I</it<–<it<V</it<, light <it<I</it<–<it<V</it< and circular transfer length measurement (CTLM) suggest limiting mechanism in the Si QD solar cell operation and possible approaches for further improvement.</p<
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title_short	Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells
url	https://doaj.org/article/63559085924e4b288b10760dbeb82e35 http://dx.doi.org/10.1007/s11671-010-9707-x https://doaj.org/toc/1931-7573 https://doaj.org/toc/1556-276X
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