Nanostructured MoS<sub<2</sub< and WS<sub<2</sub< Photoresponses under Gas Stimuli

This study was on the optoelectronic properties of multilayered two-dimensional MoS<sub<2</sub< and WS<sub<2</sub< materials on a silicon substrate using sputtering physical vapor deposition (PVD) and chemical vapor deposition (CVD) techniques. For the first time, we report u...
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Autor*in:	Mohamed A. Basyooni [verfasserIn] Shrouk E. Zaki [verfasserIn] Nada Alfryyan [verfasserIn] Mohammed Tihtih [verfasserIn] Yasin Ramazan Eker [verfasserIn] Gamal F. Attia [verfasserIn] Mücahit Yılmaz [verfasserIn] Şule Ateş [verfasserIn] Mohamed Shaban [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2022

Schlagwörter:	two-dimensional material MoS WS thin film optoelectronics

Übergeordnetes Werk:	In: Nanomaterials - MDPI AG, 2012, 12(2022), 20, p 3585
Übergeordnetes Werk:	volume:12 ; year:2022 ; number:20, p 3585

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/nano12203585

Katalog-ID:	DOAJ027426432

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allfields	10.3390/nano12203585 doi (DE-627)DOAJ027426432 (DE-599)DOAJ36bbec9203fa4addb0472c752e788050 DE-627 ger DE-627 rakwb eng QD1-999 Mohamed A. Basyooni verfasserin aut Nanostructured MoS<sub<2</sub< and WS<sub<2</sub< Photoresponses under Gas Stimuli 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This study was on the optoelectronic properties of multilayered two-dimensional MoS<sub<2</sub< and WS<sub<2</sub< materials on a silicon substrate using sputtering physical vapor deposition (PVD) and chemical vapor deposition (CVD) techniques. For the first time, we report ultraviolet (UV) photoresponses under air, CO<sub<2</sub<, and O<sub<2</sub< environments at different flow rates. The electrical Hall effect measurement showed the existence of MoS<sub<2</sub< (n-type)/Si (p-type) and WS<sub<2</sub< (P-type)/Si (p-type) heterojunctions with a higher sheet carrier concentration of 5.50 × 10<sup<5</sup< cm<sup<−2</sup< for WS<sub<2</sub< thin film. The IV electrical results revealed that WS<sub<2</sub< is more reactive than MoS<sub<2</sub< film under different gas stimuli. WS<sub<2</sub< film showed high stability under different bias voltages, even at zero bias voltage, due to the noticeably good carrier mobility of 29.8 × 10<sup<2</sup< cm<sup<2</sup</V. WS<sub<2</sub< film indicated a fast rise/decay time of 0.23/0.21 s under air while a faster response of 0.190/0.10 s under a CO<sub<2</sub< environment was observed. Additionally, the external quantum efficiency of WS<sub<2</sub< revealed a remarkable enhancement in the CO<sub<2</sub< environment of 1.62 × 10<sup<8</sup< compared to MoS<sub<2</sub< film with 6.74 × 10<sup<6</sup<. According to our findings, the presence of CO<sub<2</sub< on the surface of WS<sub<2</sub< improves such optoelectronic properties as photocurrent gain, photoresponsivity, external quantum efficiency, and detectivity. These results indicate potential applications of WS<sub<2</sub< as a photodetector under gas stimuli for future optoelectronic applications. two-dimensional material MoS<sub<2</sub< WS<sub<2</sub< thin film optoelectronics Chemistry Shrouk E. Zaki verfasserin aut Nada Alfryyan verfasserin aut Mohammed Tihtih verfasserin aut Yasin Ramazan Eker verfasserin aut Gamal F. Attia verfasserin aut Mücahit Yılmaz verfasserin aut Şule Ateş verfasserin aut Mohamed Shaban verfasserin aut In Nanomaterials MDPI AG, 2012 12(2022), 20, p 3585 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:12 year:2022 number:20, p 3585 https://doi.org/10.3390/nano12203585 kostenfrei https://doaj.org/article/36bbec9203fa4addb0472c752e788050 kostenfrei https://www.mdpi.com/2079-4991/12/20/3585 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2022 20, p 3585
spelling	10.3390/nano12203585 doi (DE-627)DOAJ027426432 (DE-599)DOAJ36bbec9203fa4addb0472c752e788050 DE-627 ger DE-627 rakwb eng QD1-999 Mohamed A. Basyooni verfasserin aut Nanostructured MoS<sub<2</sub< and WS<sub<2</sub< Photoresponses under Gas Stimuli 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This study was on the optoelectronic properties of multilayered two-dimensional MoS<sub<2</sub< and WS<sub<2</sub< materials on a silicon substrate using sputtering physical vapor deposition (PVD) and chemical vapor deposition (CVD) techniques. For the first time, we report ultraviolet (UV) photoresponses under air, CO<sub<2</sub<, and O<sub<2</sub< environments at different flow rates. The electrical Hall effect measurement showed the existence of MoS<sub<2</sub< (n-type)/Si (p-type) and WS<sub<2</sub< (P-type)/Si (p-type) heterojunctions with a higher sheet carrier concentration of 5.50 × 10<sup<5</sup< cm<sup<−2</sup< for WS<sub<2</sub< thin film. The IV electrical results revealed that WS<sub<2</sub< is more reactive than MoS<sub<2</sub< film under different gas stimuli. WS<sub<2</sub< film showed high stability under different bias voltages, even at zero bias voltage, due to the noticeably good carrier mobility of 29.8 × 10<sup<2</sup< cm<sup<2</sup</V. WS<sub<2</sub< film indicated a fast rise/decay time of 0.23/0.21 s under air while a faster response of 0.190/0.10 s under a CO<sub<2</sub< environment was observed. Additionally, the external quantum efficiency of WS<sub<2</sub< revealed a remarkable enhancement in the CO<sub<2</sub< environment of 1.62 × 10<sup<8</sup< compared to MoS<sub<2</sub< film with 6.74 × 10<sup<6</sup<. According to our findings, the presence of CO<sub<2</sub< on the surface of WS<sub<2</sub< improves such optoelectronic properties as photocurrent gain, photoresponsivity, external quantum efficiency, and detectivity. These results indicate potential applications of WS<sub<2</sub< as a photodetector under gas stimuli for future optoelectronic applications. two-dimensional material MoS<sub<2</sub< WS<sub<2</sub< thin film optoelectronics Chemistry Shrouk E. Zaki verfasserin aut Nada Alfryyan verfasserin aut Mohammed Tihtih verfasserin aut Yasin Ramazan Eker verfasserin aut Gamal F. Attia verfasserin aut Mücahit Yılmaz verfasserin aut Şule Ateş verfasserin aut Mohamed Shaban verfasserin aut In Nanomaterials MDPI AG, 2012 12(2022), 20, p 3585 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:12 year:2022 number:20, p 3585 https://doi.org/10.3390/nano12203585 kostenfrei https://doaj.org/article/36bbec9203fa4addb0472c752e788050 kostenfrei https://www.mdpi.com/2079-4991/12/20/3585 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2022 20, p 3585
allfields_unstemmed	10.3390/nano12203585 doi (DE-627)DOAJ027426432 (DE-599)DOAJ36bbec9203fa4addb0472c752e788050 DE-627 ger DE-627 rakwb eng QD1-999 Mohamed A. Basyooni verfasserin aut Nanostructured MoS<sub<2</sub< and WS<sub<2</sub< Photoresponses under Gas Stimuli 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This study was on the optoelectronic properties of multilayered two-dimensional MoS<sub<2</sub< and WS<sub<2</sub< materials on a silicon substrate using sputtering physical vapor deposition (PVD) and chemical vapor deposition (CVD) techniques. For the first time, we report ultraviolet (UV) photoresponses under air, CO<sub<2</sub<, and O<sub<2</sub< environments at different flow rates. The electrical Hall effect measurement showed the existence of MoS<sub<2</sub< (n-type)/Si (p-type) and WS<sub<2</sub< (P-type)/Si (p-type) heterojunctions with a higher sheet carrier concentration of 5.50 × 10<sup<5</sup< cm<sup<−2</sup< for WS<sub<2</sub< thin film. The IV electrical results revealed that WS<sub<2</sub< is more reactive than MoS<sub<2</sub< film under different gas stimuli. WS<sub<2</sub< film showed high stability under different bias voltages, even at zero bias voltage, due to the noticeably good carrier mobility of 29.8 × 10<sup<2</sup< cm<sup<2</sup</V. WS<sub<2</sub< film indicated a fast rise/decay time of 0.23/0.21 s under air while a faster response of 0.190/0.10 s under a CO<sub<2</sub< environment was observed. Additionally, the external quantum efficiency of WS<sub<2</sub< revealed a remarkable enhancement in the CO<sub<2</sub< environment of 1.62 × 10<sup<8</sup< compared to MoS<sub<2</sub< film with 6.74 × 10<sup<6</sup<. According to our findings, the presence of CO<sub<2</sub< on the surface of WS<sub<2</sub< improves such optoelectronic properties as photocurrent gain, photoresponsivity, external quantum efficiency, and detectivity. These results indicate potential applications of WS<sub<2</sub< as a photodetector under gas stimuli for future optoelectronic applications. two-dimensional material MoS<sub<2</sub< WS<sub<2</sub< thin film optoelectronics Chemistry Shrouk E. Zaki verfasserin aut Nada Alfryyan verfasserin aut Mohammed Tihtih verfasserin aut Yasin Ramazan Eker verfasserin aut Gamal F. Attia verfasserin aut Mücahit Yılmaz verfasserin aut Şule Ateş verfasserin aut Mohamed Shaban verfasserin aut In Nanomaterials MDPI AG, 2012 12(2022), 20, p 3585 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:12 year:2022 number:20, p 3585 https://doi.org/10.3390/nano12203585 kostenfrei https://doaj.org/article/36bbec9203fa4addb0472c752e788050 kostenfrei https://www.mdpi.com/2079-4991/12/20/3585 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2022 20, p 3585
allfieldsGer	10.3390/nano12203585 doi (DE-627)DOAJ027426432 (DE-599)DOAJ36bbec9203fa4addb0472c752e788050 DE-627 ger DE-627 rakwb eng QD1-999 Mohamed A. Basyooni verfasserin aut Nanostructured MoS<sub<2</sub< and WS<sub<2</sub< Photoresponses under Gas Stimuli 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This study was on the optoelectronic properties of multilayered two-dimensional MoS<sub<2</sub< and WS<sub<2</sub< materials on a silicon substrate using sputtering physical vapor deposition (PVD) and chemical vapor deposition (CVD) techniques. For the first time, we report ultraviolet (UV) photoresponses under air, CO<sub<2</sub<, and O<sub<2</sub< environments at different flow rates. The electrical Hall effect measurement showed the existence of MoS<sub<2</sub< (n-type)/Si (p-type) and WS<sub<2</sub< (P-type)/Si (p-type) heterojunctions with a higher sheet carrier concentration of 5.50 × 10<sup<5</sup< cm<sup<−2</sup< for WS<sub<2</sub< thin film. The IV electrical results revealed that WS<sub<2</sub< is more reactive than MoS<sub<2</sub< film under different gas stimuli. WS<sub<2</sub< film showed high stability under different bias voltages, even at zero bias voltage, due to the noticeably good carrier mobility of 29.8 × 10<sup<2</sup< cm<sup<2</sup</V. WS<sub<2</sub< film indicated a fast rise/decay time of 0.23/0.21 s under air while a faster response of 0.190/0.10 s under a CO<sub<2</sub< environment was observed. Additionally, the external quantum efficiency of WS<sub<2</sub< revealed a remarkable enhancement in the CO<sub<2</sub< environment of 1.62 × 10<sup<8</sup< compared to MoS<sub<2</sub< film with 6.74 × 10<sup<6</sup<. According to our findings, the presence of CO<sub<2</sub< on the surface of WS<sub<2</sub< improves such optoelectronic properties as photocurrent gain, photoresponsivity, external quantum efficiency, and detectivity. These results indicate potential applications of WS<sub<2</sub< as a photodetector under gas stimuli for future optoelectronic applications. two-dimensional material MoS<sub<2</sub< WS<sub<2</sub< thin film optoelectronics Chemistry Shrouk E. Zaki verfasserin aut Nada Alfryyan verfasserin aut Mohammed Tihtih verfasserin aut Yasin Ramazan Eker verfasserin aut Gamal F. Attia verfasserin aut Mücahit Yılmaz verfasserin aut Şule Ateş verfasserin aut Mohamed Shaban verfasserin aut In Nanomaterials MDPI AG, 2012 12(2022), 20, p 3585 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:12 year:2022 number:20, p 3585 https://doi.org/10.3390/nano12203585 kostenfrei https://doaj.org/article/36bbec9203fa4addb0472c752e788050 kostenfrei https://www.mdpi.com/2079-4991/12/20/3585 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2022 20, p 3585
allfieldsSound	10.3390/nano12203585 doi (DE-627)DOAJ027426432 (DE-599)DOAJ36bbec9203fa4addb0472c752e788050 DE-627 ger DE-627 rakwb eng QD1-999 Mohamed A. Basyooni verfasserin aut Nanostructured MoS<sub<2</sub< and WS<sub<2</sub< Photoresponses under Gas Stimuli 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This study was on the optoelectronic properties of multilayered two-dimensional MoS<sub<2</sub< and WS<sub<2</sub< materials on a silicon substrate using sputtering physical vapor deposition (PVD) and chemical vapor deposition (CVD) techniques. For the first time, we report ultraviolet (UV) photoresponses under air, CO<sub<2</sub<, and O<sub<2</sub< environments at different flow rates. The electrical Hall effect measurement showed the existence of MoS<sub<2</sub< (n-type)/Si (p-type) and WS<sub<2</sub< (P-type)/Si (p-type) heterojunctions with a higher sheet carrier concentration of 5.50 × 10<sup<5</sup< cm<sup<−2</sup< for WS<sub<2</sub< thin film. The IV electrical results revealed that WS<sub<2</sub< is more reactive than MoS<sub<2</sub< film under different gas stimuli. WS<sub<2</sub< film showed high stability under different bias voltages, even at zero bias voltage, due to the noticeably good carrier mobility of 29.8 × 10<sup<2</sup< cm<sup<2</sup</V. WS<sub<2</sub< film indicated a fast rise/decay time of 0.23/0.21 s under air while a faster response of 0.190/0.10 s under a CO<sub<2</sub< environment was observed. Additionally, the external quantum efficiency of WS<sub<2</sub< revealed a remarkable enhancement in the CO<sub<2</sub< environment of 1.62 × 10<sup<8</sup< compared to MoS<sub<2</sub< film with 6.74 × 10<sup<6</sup<. According to our findings, the presence of CO<sub<2</sub< on the surface of WS<sub<2</sub< improves such optoelectronic properties as photocurrent gain, photoresponsivity, external quantum efficiency, and detectivity. These results indicate potential applications of WS<sub<2</sub< as a photodetector under gas stimuli for future optoelectronic applications. two-dimensional material MoS<sub<2</sub< WS<sub<2</sub< thin film optoelectronics Chemistry Shrouk E. Zaki verfasserin aut Nada Alfryyan verfasserin aut Mohammed Tihtih verfasserin aut Yasin Ramazan Eker verfasserin aut Gamal F. Attia verfasserin aut Mücahit Yılmaz verfasserin aut Şule Ateş verfasserin aut Mohamed Shaban verfasserin aut In Nanomaterials MDPI AG, 2012 12(2022), 20, p 3585 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:12 year:2022 number:20, p 3585 https://doi.org/10.3390/nano12203585 kostenfrei https://doaj.org/article/36bbec9203fa4addb0472c752e788050 kostenfrei https://www.mdpi.com/2079-4991/12/20/3585 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2022 20, p 3585
language	English
source	In Nanomaterials 12(2022), 20, p 3585 volume:12 year:2022 number:20, p 3585
sourceStr	In Nanomaterials 12(2022), 20, p 3585 volume:12 year:2022 number:20, p 3585
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	two-dimensional material MoS<sub<2</sub< WS<sub<2</sub< thin film optoelectronics Chemistry
isfreeaccess_bool	true
container_title	Nanomaterials
authorswithroles_txt_mv	Mohamed A. Basyooni @@aut@@ Shrouk E. Zaki @@aut@@ Nada Alfryyan @@aut@@ Mohammed Tihtih @@aut@@ Yasin Ramazan Eker @@aut@@ Gamal F. Attia @@aut@@ Mücahit Yılmaz @@aut@@ Şule Ateş @@aut@@ Mohamed Shaban @@aut@@
publishDateDaySort_date	2022-01-01T00:00:00Z
hierarchy_top_id	718627199
id	DOAJ027426432
language_de	englisch
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callnumber-first	Q - Science
author	Mohamed A. Basyooni
spellingShingle	Mohamed A. Basyooni misc QD1-999 misc two-dimensional material misc MoS<sub<2</sub< misc WS<sub<2</sub< misc thin film misc optoelectronics misc Chemistry Nanostructured MoS<sub<2</sub< and WS<sub<2</sub< Photoresponses under Gas Stimuli
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topic_title	QD1-999 Nanostructured MoS<sub<2</sub< and WS<sub<2</sub< Photoresponses under Gas Stimuli two-dimensional material MoS<sub<2</sub< WS<sub<2</sub< thin film optoelectronics
topic	misc QD1-999 misc two-dimensional material misc MoS<sub<2</sub< misc WS<sub<2</sub< misc thin film misc optoelectronics misc Chemistry
topic_unstemmed	misc QD1-999 misc two-dimensional material misc MoS<sub<2</sub< misc WS<sub<2</sub< misc thin film misc optoelectronics misc Chemistry
topic_browse	misc QD1-999 misc two-dimensional material misc MoS<sub<2</sub< misc WS<sub<2</sub< misc thin film misc optoelectronics misc Chemistry
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title	Nanostructured MoS<sub<2</sub< and WS<sub<2</sub< Photoresponses under Gas Stimuli
ctrlnum	(DE-627)DOAJ027426432 (DE-599)DOAJ36bbec9203fa4addb0472c752e788050
title_full	Nanostructured MoS<sub<2</sub< and WS<sub<2</sub< Photoresponses under Gas Stimuli
author_sort	Mohamed A. Basyooni
journal	Nanomaterials
journalStr	Nanomaterials
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author_browse	Mohamed A. Basyooni Shrouk E. Zaki Nada Alfryyan Mohammed Tihtih Yasin Ramazan Eker Gamal F. Attia Mücahit Yılmaz Şule Ateş Mohamed Shaban
container_volume	12
class	QD1-999
format_se	Elektronische Aufsätze
author-letter	Mohamed A. Basyooni
doi_str_mv	10.3390/nano12203585
author2-role	verfasserin
title_sort	nanostructured mos<sub<2</sub< and ws<sub<2</sub< photoresponses under gas stimuli
callnumber	QD1-999
title_auth	Nanostructured MoS<sub<2</sub< and WS<sub<2</sub< Photoresponses under Gas Stimuli
abstract	This study was on the optoelectronic properties of multilayered two-dimensional MoS<sub<2</sub< and WS<sub<2</sub< materials on a silicon substrate using sputtering physical vapor deposition (PVD) and chemical vapor deposition (CVD) techniques. For the first time, we report ultraviolet (UV) photoresponses under air, CO<sub<2</sub<, and O<sub<2</sub< environments at different flow rates. The electrical Hall effect measurement showed the existence of MoS<sub<2</sub< (n-type)/Si (p-type) and WS<sub<2</sub< (P-type)/Si (p-type) heterojunctions with a higher sheet carrier concentration of 5.50 × 10<sup<5</sup< cm<sup<−2</sup< for WS<sub<2</sub< thin film. The IV electrical results revealed that WS<sub<2</sub< is more reactive than MoS<sub<2</sub< film under different gas stimuli. WS<sub<2</sub< film showed high stability under different bias voltages, even at zero bias voltage, due to the noticeably good carrier mobility of 29.8 × 10<sup<2</sup< cm<sup<2</sup</V. WS<sub<2</sub< film indicated a fast rise/decay time of 0.23/0.21 s under air while a faster response of 0.190/0.10 s under a CO<sub<2</sub< environment was observed. Additionally, the external quantum efficiency of WS<sub<2</sub< revealed a remarkable enhancement in the CO<sub<2</sub< environment of 1.62 × 10<sup<8</sup< compared to MoS<sub<2</sub< film with 6.74 × 10<sup<6</sup<. According to our findings, the presence of CO<sub<2</sub< on the surface of WS<sub<2</sub< improves such optoelectronic properties as photocurrent gain, photoresponsivity, external quantum efficiency, and detectivity. These results indicate potential applications of WS<sub<2</sub< as a photodetector under gas stimuli for future optoelectronic applications.
abstractGer	This study was on the optoelectronic properties of multilayered two-dimensional MoS<sub<2</sub< and WS<sub<2</sub< materials on a silicon substrate using sputtering physical vapor deposition (PVD) and chemical vapor deposition (CVD) techniques. For the first time, we report ultraviolet (UV) photoresponses under air, CO<sub<2</sub<, and O<sub<2</sub< environments at different flow rates. The electrical Hall effect measurement showed the existence of MoS<sub<2</sub< (n-type)/Si (p-type) and WS<sub<2</sub< (P-type)/Si (p-type) heterojunctions with a higher sheet carrier concentration of 5.50 × 10<sup<5</sup< cm<sup<−2</sup< for WS<sub<2</sub< thin film. The IV electrical results revealed that WS<sub<2</sub< is more reactive than MoS<sub<2</sub< film under different gas stimuli. WS<sub<2</sub< film showed high stability under different bias voltages, even at zero bias voltage, due to the noticeably good carrier mobility of 29.8 × 10<sup<2</sup< cm<sup<2</sup</V. WS<sub<2</sub< film indicated a fast rise/decay time of 0.23/0.21 s under air while a faster response of 0.190/0.10 s under a CO<sub<2</sub< environment was observed. Additionally, the external quantum efficiency of WS<sub<2</sub< revealed a remarkable enhancement in the CO<sub<2</sub< environment of 1.62 × 10<sup<8</sup< compared to MoS<sub<2</sub< film with 6.74 × 10<sup<6</sup<. According to our findings, the presence of CO<sub<2</sub< on the surface of WS<sub<2</sub< improves such optoelectronic properties as photocurrent gain, photoresponsivity, external quantum efficiency, and detectivity. These results indicate potential applications of WS<sub<2</sub< as a photodetector under gas stimuli for future optoelectronic applications.
abstract_unstemmed	This study was on the optoelectronic properties of multilayered two-dimensional MoS<sub<2</sub< and WS<sub<2</sub< materials on a silicon substrate using sputtering physical vapor deposition (PVD) and chemical vapor deposition (CVD) techniques. For the first time, we report ultraviolet (UV) photoresponses under air, CO<sub<2</sub<, and O<sub<2</sub< environments at different flow rates. The electrical Hall effect measurement showed the existence of MoS<sub<2</sub< (n-type)/Si (p-type) and WS<sub<2</sub< (P-type)/Si (p-type) heterojunctions with a higher sheet carrier concentration of 5.50 × 10<sup<5</sup< cm<sup<−2</sup< for WS<sub<2</sub< thin film. The IV electrical results revealed that WS<sub<2</sub< is more reactive than MoS<sub<2</sub< film under different gas stimuli. WS<sub<2</sub< film showed high stability under different bias voltages, even at zero bias voltage, due to the noticeably good carrier mobility of 29.8 × 10<sup<2</sup< cm<sup<2</sup</V. WS<sub<2</sub< film indicated a fast rise/decay time of 0.23/0.21 s under air while a faster response of 0.190/0.10 s under a CO<sub<2</sub< environment was observed. Additionally, the external quantum efficiency of WS<sub<2</sub< revealed a remarkable enhancement in the CO<sub<2</sub< environment of 1.62 × 10<sup<8</sup< compared to MoS<sub<2</sub< film with 6.74 × 10<sup<6</sup<. According to our findings, the presence of CO<sub<2</sub< on the surface of WS<sub<2</sub< improves such optoelectronic properties as photocurrent gain, photoresponsivity, external quantum efficiency, and detectivity. These results indicate potential applications of WS<sub<2</sub< as a photodetector under gas stimuli for future optoelectronic applications.
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container_issue	20, p 3585
title_short	Nanostructured MoS<sub<2</sub< and WS<sub<2</sub< Photoresponses under Gas Stimuli
url	https://doi.org/10.3390/nano12203585 https://doaj.org/article/36bbec9203fa4addb0472c752e788050 https://www.mdpi.com/2079-4991/12/20/3585 https://doaj.org/toc/2079-4991
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author2	Shrouk E. Zaki Nada Alfryyan Mohammed Tihtih Yasin Ramazan Eker Gamal F. Attia Mücahit Yılmaz Şule Ateş Mohamed Shaban
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up_date	2024-07-04T01:39:41.556Z
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Nanostructured MoS<sub<2</sub< and WS<sub<2</sub< Photoresponses under Gas Stimuli

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