THE PHENOMENON OF IMPURITY SEGREGATION IN THE VICINITY OF <i<P</i<-<i<N</i<-JUNCTION

On the basis of the microscopic diffusion mechanism due to formation, migration, and dissolution of «impurity atom-intrinsic point defect» pairs, the investigation of phenomenon of impurity segregation in the vicinity of p-n -junction was carried out. The nonuniform distribution of point defects res...
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Autor*in:	O. I. Velichko [verfasserIn]

Format:	E-Artikel
Sprache:	Russisch

Erschienen:	2019

Schlagwörter:	p-n-переход impurity diffusion segregation p-n-junction

Übergeordnetes Werk:	In: Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki - Educational institution «Belarusian State University of Informatics and Radioelectronics», 2020, (2019), 6, Seite 30-34
Übergeordnetes Werk:	year:2019 ; number:6 ; pages:30-34

Links:	Link aufrufen Link aufrufen Journal toc

Katalog-ID:	DOAJ029342503

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language	Russian
source	In Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki (2019), 6, Seite 30-34 year:2019 number:6 pages:30-34
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topic_facet	p-n-переход impurity diffusion segregation p-n-junction Electronics
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callnumber-first	T - Technology
author	O. I. Velichko
spellingShingle	O. I. Velichko misc TK7800-8360 misc p-n-переход misc impurity misc diffusion misc segregation misc p-n-junction misc Electronics THE PHENOMENON OF IMPURITY SEGREGATION IN THE VICINITY OF <i<P</i<-<i<N</i<-JUNCTION
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topic_title	TK7800-8360 THE PHENOMENON OF IMPURITY SEGREGATION IN THE VICINITY OF <i<P</i<-<i<N</i<-JUNCTION p-n-переход impurity diffusion segregation p-n-junction
topic	misc TK7800-8360 misc p-n-переход misc impurity misc diffusion misc segregation misc p-n-junction misc Electronics
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title	THE PHENOMENON OF IMPURITY SEGREGATION IN THE VICINITY OF <i<P</i<-<i<N</i<-JUNCTION
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title_sort	phenomenon of impurity segregation in the vicinity of <i<p</i<-<i<n</i<-junction
callnumber	TK7800-8360
title_auth	THE PHENOMENON OF IMPURITY SEGREGATION IN THE VICINITY OF <i<P</i<-<i<N</i<-JUNCTION
abstract	On the basis of the microscopic diffusion mechanism due to formation, migration, and dissolution of «impurity atom-intrinsic point defect» pairs, the investigation of phenomenon of impurity segregation in the vicinity of p-n -junction was carried out. The nonuniform distribution of point defects responsible for impurity diffusion has been taken into account.
abstractGer	On the basis of the microscopic diffusion mechanism due to formation, migration, and dissolution of «impurity atom-intrinsic point defect» pairs, the investigation of phenomenon of impurity segregation in the vicinity of p-n -junction was carried out. The nonuniform distribution of point defects responsible for impurity diffusion has been taken into account.
abstract_unstemmed	On the basis of the microscopic diffusion mechanism due to formation, migration, and dissolution of «impurity atom-intrinsic point defect» pairs, the investigation of phenomenon of impurity segregation in the vicinity of p-n -junction was carried out. The nonuniform distribution of point defects responsible for impurity diffusion has been taken into account.
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