Preparation and Charge Transfer at Sb<sub<2</sub<Se<sub<3</sub</1L-MoS<sub<2</sub< Heterojunction

Owing to the strong optical absorption of Sb2Se3, building heterojunctions (HJs) by using thin-layer Sb2Se3 and other two-dimensional (2D) materials is critical to the design and applications of ultrathin optoelectronic devices. However, the preparation of HJs using Sb2Se3 and other transition metal...
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Autor*in:	Yiren Wang [verfasserIn] Weitao Su [verfasserIn] Fei Chen [verfasserIn] Hong-Wei Lu [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2022

Schlagwörter:	1L-MoS Sb heterojunction charge transfer

Übergeordnetes Werk:	In: Electronics - MDPI AG, 2013, 11(2022), 16, p 2574
Übergeordnetes Werk:	volume:11 ; year:2022 ; number:16, p 2574

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/electronics11162574

Katalog-ID:	DOAJ030341922

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520			\|a Owing to the strong optical absorption of Sb2Se3, building heterojunctions (HJs) by using thin-layer Sb2Se3 and other two-dimensional (2D) materials is critical to the design and applications of ultrathin optoelectronic devices. However, the preparation of HJs using Sb2Se3 and other transition metal dichalcogenide (TMDC) thin layers is still challenging. Herein, a chemical vapor deposition (CVD) method was used to prepare monolayer MoS2(1L-MoS2) and Sb2Se3 thin layers. A dry transfer method was subsequently used to build their HJs. Individual PL spectra and PL mapping results obtained at the HJs indicate a charge injection from 1L-MoS2 into Sb2Se3 flake, which was further confirmed by contact potential difference (CPD) results obtained by using Kelvin probe force microscopy (KPFM). Further measurements indicate a type-Ⅰ band alignment with a band offset finally determined to be 157 meV. The obtained results of Sb2Se3/1L-MoS2 HJs will benefit the rational design of novel ultrathin optoelectronic devices based on novel 2D absorber layers working in visible light.
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language	English
source	In Electronics 11(2022), 16, p 2574 volume:11 year:2022 number:16, p 2574
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topic_facet	1L-MoS<sub<2</sub< Sb<sub<2</sub<Se<sub<3</sub< heterojunction charge transfer Electronics
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container_title	Electronics
authorswithroles_txt_mv	Yiren Wang @@aut@@ Weitao Su @@aut@@ Fei Chen @@aut@@ Hong-Wei Lu @@aut@@
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callnumber-first	T - Technology
author	Yiren Wang
spellingShingle	Yiren Wang misc TK7800-8360 misc 1L-MoS<sub<2</sub< misc Sb<sub<2</sub<Se<sub<3</sub< misc heterojunction misc charge transfer misc Electronics Preparation and Charge Transfer at Sb<sub<2</sub<Se<sub<3</sub</1L-MoS<sub<2</sub< Heterojunction
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topic_title	TK7800-8360 Preparation and Charge Transfer at Sb<sub<2</sub<Se<sub<3</sub</1L-MoS<sub<2</sub< Heterojunction 1L-MoS<sub<2</sub< Sb<sub<2</sub<Se<sub<3</sub< heterojunction charge transfer
topic	misc TK7800-8360 misc 1L-MoS<sub<2</sub< misc Sb<sub<2</sub<Se<sub<3</sub< misc heterojunction misc charge transfer misc Electronics
topic_unstemmed	misc TK7800-8360 misc 1L-MoS<sub<2</sub< misc Sb<sub<2</sub<Se<sub<3</sub< misc heterojunction misc charge transfer misc Electronics
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title	Preparation and Charge Transfer at Sb<sub<2</sub<Se<sub<3</sub</1L-MoS<sub<2</sub< Heterojunction
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title_full	Preparation and Charge Transfer at Sb<sub<2</sub<Se<sub<3</sub</1L-MoS<sub<2</sub< Heterojunction
author_sort	Yiren Wang
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title_sort	preparation and charge transfer at sb<sub<2</sub<se<sub<3</sub</1l-mos<sub<2</sub< heterojunction
callnumber	TK7800-8360
title_auth	Preparation and Charge Transfer at Sb<sub<2</sub<Se<sub<3</sub</1L-MoS<sub<2</sub< Heterojunction
abstract	Owing to the strong optical absorption of Sb2Se3, building heterojunctions (HJs) by using thin-layer Sb2Se3 and other two-dimensional (2D) materials is critical to the design and applications of ultrathin optoelectronic devices. However, the preparation of HJs using Sb2Se3 and other transition metal dichalcogenide (TMDC) thin layers is still challenging. Herein, a chemical vapor deposition (CVD) method was used to prepare monolayer MoS2(1L-MoS2) and Sb2Se3 thin layers. A dry transfer method was subsequently used to build their HJs. Individual PL spectra and PL mapping results obtained at the HJs indicate a charge injection from 1L-MoS2 into Sb2Se3 flake, which was further confirmed by contact potential difference (CPD) results obtained by using Kelvin probe force microscopy (KPFM). Further measurements indicate a type-Ⅰ band alignment with a band offset finally determined to be 157 meV. The obtained results of Sb2Se3/1L-MoS2 HJs will benefit the rational design of novel ultrathin optoelectronic devices based on novel 2D absorber layers working in visible light.
abstractGer	Owing to the strong optical absorption of Sb2Se3, building heterojunctions (HJs) by using thin-layer Sb2Se3 and other two-dimensional (2D) materials is critical to the design and applications of ultrathin optoelectronic devices. However, the preparation of HJs using Sb2Se3 and other transition metal dichalcogenide (TMDC) thin layers is still challenging. Herein, a chemical vapor deposition (CVD) method was used to prepare monolayer MoS2(1L-MoS2) and Sb2Se3 thin layers. A dry transfer method was subsequently used to build their HJs. Individual PL spectra and PL mapping results obtained at the HJs indicate a charge injection from 1L-MoS2 into Sb2Se3 flake, which was further confirmed by contact potential difference (CPD) results obtained by using Kelvin probe force microscopy (KPFM). Further measurements indicate a type-Ⅰ band alignment with a band offset finally determined to be 157 meV. The obtained results of Sb2Se3/1L-MoS2 HJs will benefit the rational design of novel ultrathin optoelectronic devices based on novel 2D absorber layers working in visible light.
abstract_unstemmed	Owing to the strong optical absorption of Sb2Se3, building heterojunctions (HJs) by using thin-layer Sb2Se3 and other two-dimensional (2D) materials is critical to the design and applications of ultrathin optoelectronic devices. However, the preparation of HJs using Sb2Se3 and other transition metal dichalcogenide (TMDC) thin layers is still challenging. Herein, a chemical vapor deposition (CVD) method was used to prepare monolayer MoS2(1L-MoS2) and Sb2Se3 thin layers. A dry transfer method was subsequently used to build their HJs. Individual PL spectra and PL mapping results obtained at the HJs indicate a charge injection from 1L-MoS2 into Sb2Se3 flake, which was further confirmed by contact potential difference (CPD) results obtained by using Kelvin probe force microscopy (KPFM). Further measurements indicate a type-Ⅰ band alignment with a band offset finally determined to be 157 meV. The obtained results of Sb2Se3/1L-MoS2 HJs will benefit the rational design of novel ultrathin optoelectronic devices based on novel 2D absorber layers working in visible light.
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title_short	Preparation and Charge Transfer at Sb<sub<2</sub<Se<sub<3</sub</1L-MoS<sub<2</sub< Heterojunction
url	https://doi.org/10.3390/electronics11162574 https://doaj.org/article/ec75cb20dbf34519b3e127363aa37748 https://www.mdpi.com/2079-9292/11/16/2574 https://doaj.org/toc/2079-9292
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