Amorphous Silicon Thin Film Deposition for Poly-Si/SiO<sub<2</sub< Contact Cells to Minimize Parasitic Absorption in the Near-Infrared Region

Tunnel oxide passivated contact (TOPCon) solar cells are key emerging devices in the commercial silicon-solar-cell sector. It is essential to have a suitable bottom cell in perovskite/silicon tandem solar cells for commercial use, given that good candidates boost efficiency through increased voltage...
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Autor*in:	Changhyun Lee [verfasserIn] Jiyeon Hyun [verfasserIn] Jiyeon Nam [verfasserIn] Seok-Hyun Jeong [verfasserIn] Hoyoung Song [verfasserIn] Soohyun Bae [verfasserIn] Hyunju Lee [verfasserIn] Jaeseung Seol [verfasserIn] Donghwan Kim [verfasserIn] Yoonmook Kang [verfasserIn] Hae-Seok Lee [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2021

Schlagwörter:	silicon solar cells passivated contact amorphous silicon tunnel oxide passivated contact

Übergeordnetes Werk:	In: Energies - MDPI AG, 2008, 14(2021), 24, p 8199
Übergeordnetes Werk:	volume:14 ; year:2021 ; number:24, p 8199

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/en14248199

Katalog-ID:	DOAJ030646553

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allfields	10.3390/en14248199 doi (DE-627)DOAJ030646553 (DE-599)DOAJ7ec71a85fe5c457c92e4b1d14da9b4b2 DE-627 ger DE-627 rakwb eng Changhyun Lee verfasserin aut Amorphous Silicon Thin Film Deposition for Poly-Si/SiO<sub<2</sub< Contact Cells to Minimize Parasitic Absorption in the Near-Infrared Region 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Tunnel oxide passivated contact (TOPCon) solar cells are key emerging devices in the commercial silicon-solar-cell sector. It is essential to have a suitable bottom cell in perovskite/silicon tandem solar cells for commercial use, given that good candidates boost efficiency through increased voltage. This is due to low recombination loss through the use of polysilicon and tunneling oxides. Here, a thin amorphous silicon layer is proposed to reduce parasitic absorption in the near-infrared region (NIR) in TOPCon solar cells, when used as the bottom cell of a tandem solar-cell system. Lifetime measurements and optical microscopy (OM) revealed that modifying both the timing and temperature of the annealing step to crystalize amorphous silicon to polysilicon can improve solar cell performance. For tandem cell applications, absorption in the NIR was compared using a semitransparent perovskite cell as a filter. Taken together, we confirmed the positive results of thin poly-Si, and expect that this will improve the application of perovskite/silicon tandem solar cells. silicon solar cells passivated contact amorphous silicon tunnel oxide passivated contact Technology T Jiyeon Hyun verfasserin aut Jiyeon Nam verfasserin aut Seok-Hyun Jeong verfasserin aut Hoyoung Song verfasserin aut Soohyun Bae verfasserin aut Hyunju Lee verfasserin aut Jaeseung Seol verfasserin aut Donghwan Kim verfasserin aut Yoonmook Kang verfasserin aut Hae-Seok Lee verfasserin aut In Energies MDPI AG, 2008 14(2021), 24, p 8199 (DE-627)572083742 (DE-600)2437446-5 19961073 nnns volume:14 year:2021 number:24, p 8199 https://doi.org/10.3390/en14248199 kostenfrei https://doaj.org/article/7ec71a85fe5c457c92e4b1d14da9b4b2 kostenfrei https://www.mdpi.com/1996-1073/14/24/8199 kostenfrei https://doaj.org/toc/1996-1073 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 14 2021 24, p 8199
spelling	10.3390/en14248199 doi (DE-627)DOAJ030646553 (DE-599)DOAJ7ec71a85fe5c457c92e4b1d14da9b4b2 DE-627 ger DE-627 rakwb eng Changhyun Lee verfasserin aut Amorphous Silicon Thin Film Deposition for Poly-Si/SiO<sub<2</sub< Contact Cells to Minimize Parasitic Absorption in the Near-Infrared Region 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Tunnel oxide passivated contact (TOPCon) solar cells are key emerging devices in the commercial silicon-solar-cell sector. It is essential to have a suitable bottom cell in perovskite/silicon tandem solar cells for commercial use, given that good candidates boost efficiency through increased voltage. This is due to low recombination loss through the use of polysilicon and tunneling oxides. Here, a thin amorphous silicon layer is proposed to reduce parasitic absorption in the near-infrared region (NIR) in TOPCon solar cells, when used as the bottom cell of a tandem solar-cell system. Lifetime measurements and optical microscopy (OM) revealed that modifying both the timing and temperature of the annealing step to crystalize amorphous silicon to polysilicon can improve solar cell performance. For tandem cell applications, absorption in the NIR was compared using a semitransparent perovskite cell as a filter. Taken together, we confirmed the positive results of thin poly-Si, and expect that this will improve the application of perovskite/silicon tandem solar cells. silicon solar cells passivated contact amorphous silicon tunnel oxide passivated contact Technology T Jiyeon Hyun verfasserin aut Jiyeon Nam verfasserin aut Seok-Hyun Jeong verfasserin aut Hoyoung Song verfasserin aut Soohyun Bae verfasserin aut Hyunju Lee verfasserin aut Jaeseung Seol verfasserin aut Donghwan Kim verfasserin aut Yoonmook Kang verfasserin aut Hae-Seok Lee verfasserin aut In Energies MDPI AG, 2008 14(2021), 24, p 8199 (DE-627)572083742 (DE-600)2437446-5 19961073 nnns volume:14 year:2021 number:24, p 8199 https://doi.org/10.3390/en14248199 kostenfrei https://doaj.org/article/7ec71a85fe5c457c92e4b1d14da9b4b2 kostenfrei https://www.mdpi.com/1996-1073/14/24/8199 kostenfrei https://doaj.org/toc/1996-1073 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 14 2021 24, p 8199
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allfieldsSound	10.3390/en14248199 doi (DE-627)DOAJ030646553 (DE-599)DOAJ7ec71a85fe5c457c92e4b1d14da9b4b2 DE-627 ger DE-627 rakwb eng Changhyun Lee verfasserin aut Amorphous Silicon Thin Film Deposition for Poly-Si/SiO<sub<2</sub< Contact Cells to Minimize Parasitic Absorption in the Near-Infrared Region 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Tunnel oxide passivated contact (TOPCon) solar cells are key emerging devices in the commercial silicon-solar-cell sector. It is essential to have a suitable bottom cell in perovskite/silicon tandem solar cells for commercial use, given that good candidates boost efficiency through increased voltage. This is due to low recombination loss through the use of polysilicon and tunneling oxides. Here, a thin amorphous silicon layer is proposed to reduce parasitic absorption in the near-infrared region (NIR) in TOPCon solar cells, when used as the bottom cell of a tandem solar-cell system. Lifetime measurements and optical microscopy (OM) revealed that modifying both the timing and temperature of the annealing step to crystalize amorphous silicon to polysilicon can improve solar cell performance. For tandem cell applications, absorption in the NIR was compared using a semitransparent perovskite cell as a filter. Taken together, we confirmed the positive results of thin poly-Si, and expect that this will improve the application of perovskite/silicon tandem solar cells. silicon solar cells passivated contact amorphous silicon tunnel oxide passivated contact Technology T Jiyeon Hyun verfasserin aut Jiyeon Nam verfasserin aut Seok-Hyun Jeong verfasserin aut Hoyoung Song verfasserin aut Soohyun Bae verfasserin aut Hyunju Lee verfasserin aut Jaeseung Seol verfasserin aut Donghwan Kim verfasserin aut Yoonmook Kang verfasserin aut Hae-Seok Lee verfasserin aut In Energies MDPI AG, 2008 14(2021), 24, p 8199 (DE-627)572083742 (DE-600)2437446-5 19961073 nnns volume:14 year:2021 number:24, p 8199 https://doi.org/10.3390/en14248199 kostenfrei https://doaj.org/article/7ec71a85fe5c457c92e4b1d14da9b4b2 kostenfrei https://www.mdpi.com/1996-1073/14/24/8199 kostenfrei https://doaj.org/toc/1996-1073 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 14 2021 24, p 8199
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author	Changhyun Lee
spellingShingle	Changhyun Lee misc silicon solar cells misc passivated contact misc amorphous silicon misc tunnel oxide passivated contact misc Technology misc T Amorphous Silicon Thin Film Deposition for Poly-Si/SiO<sub<2</sub< Contact Cells to Minimize Parasitic Absorption in the Near-Infrared Region
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topic_title	Amorphous Silicon Thin Film Deposition for Poly-Si/SiO<sub<2</sub< Contact Cells to Minimize Parasitic Absorption in the Near-Infrared Region silicon solar cells passivated contact amorphous silicon tunnel oxide passivated contact
topic	misc silicon solar cells misc passivated contact misc amorphous silicon misc tunnel oxide passivated contact misc Technology misc T
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title	Amorphous Silicon Thin Film Deposition for Poly-Si/SiO<sub<2</sub< Contact Cells to Minimize Parasitic Absorption in the Near-Infrared Region
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title_sort	amorphous silicon thin film deposition for poly-si/sio<sub<2</sub< contact cells to minimize parasitic absorption in the near-infrared region
title_auth	Amorphous Silicon Thin Film Deposition for Poly-Si/SiO<sub<2</sub< Contact Cells to Minimize Parasitic Absorption in the Near-Infrared Region
abstract	Tunnel oxide passivated contact (TOPCon) solar cells are key emerging devices in the commercial silicon-solar-cell sector. It is essential to have a suitable bottom cell in perovskite/silicon tandem solar cells for commercial use, given that good candidates boost efficiency through increased voltage. This is due to low recombination loss through the use of polysilicon and tunneling oxides. Here, a thin amorphous silicon layer is proposed to reduce parasitic absorption in the near-infrared region (NIR) in TOPCon solar cells, when used as the bottom cell of a tandem solar-cell system. Lifetime measurements and optical microscopy (OM) revealed that modifying both the timing and temperature of the annealing step to crystalize amorphous silicon to polysilicon can improve solar cell performance. For tandem cell applications, absorption in the NIR was compared using a semitransparent perovskite cell as a filter. Taken together, we confirmed the positive results of thin poly-Si, and expect that this will improve the application of perovskite/silicon tandem solar cells.
abstractGer	Tunnel oxide passivated contact (TOPCon) solar cells are key emerging devices in the commercial silicon-solar-cell sector. It is essential to have a suitable bottom cell in perovskite/silicon tandem solar cells for commercial use, given that good candidates boost efficiency through increased voltage. This is due to low recombination loss through the use of polysilicon and tunneling oxides. Here, a thin amorphous silicon layer is proposed to reduce parasitic absorption in the near-infrared region (NIR) in TOPCon solar cells, when used as the bottom cell of a tandem solar-cell system. Lifetime measurements and optical microscopy (OM) revealed that modifying both the timing and temperature of the annealing step to crystalize amorphous silicon to polysilicon can improve solar cell performance. For tandem cell applications, absorption in the NIR was compared using a semitransparent perovskite cell as a filter. Taken together, we confirmed the positive results of thin poly-Si, and expect that this will improve the application of perovskite/silicon tandem solar cells.
abstract_unstemmed	Tunnel oxide passivated contact (TOPCon) solar cells are key emerging devices in the commercial silicon-solar-cell sector. It is essential to have a suitable bottom cell in perovskite/silicon tandem solar cells for commercial use, given that good candidates boost efficiency through increased voltage. This is due to low recombination loss through the use of polysilicon and tunneling oxides. Here, a thin amorphous silicon layer is proposed to reduce parasitic absorption in the near-infrared region (NIR) in TOPCon solar cells, when used as the bottom cell of a tandem solar-cell system. Lifetime measurements and optical microscopy (OM) revealed that modifying both the timing and temperature of the annealing step to crystalize amorphous silicon to polysilicon can improve solar cell performance. For tandem cell applications, absorption in the NIR was compared using a semitransparent perovskite cell as a filter. Taken together, we confirmed the positive results of thin poly-Si, and expect that this will improve the application of perovskite/silicon tandem solar cells.
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title_short	Amorphous Silicon Thin Film Deposition for Poly-Si/SiO<sub<2</sub< Contact Cells to Minimize Parasitic Absorption in the Near-Infrared Region
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up_date	2024-07-03T16:13:08.249Z
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Amorphous Silicon Thin Film Deposition for Poly-Si/SiO<sub<2</sub< Contact Cells to Minimize Parasitic Absorption in the Near-Infrared Region

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