A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization

This paper attempts to disclose a new GaN-based device, called the P-Cascode GaN HEMT, which uses only a single gate driver to control both the D-mode GaN and PMOS transistors. The merit of this synchronous buck converter is that it can reduce the circuit complexity of the synchronous buck converter...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Chih-Chiang Wu [verfasserIn] Ching-Yao Liu [verfasserIn] Guo-Bin Wang [verfasserIn] Yueh-Tsung Shieh [verfasserIn] Wei-Hua Chieng [verfasserIn] Edward Yi Chang [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2021

Schlagwörter:	synchronous buck converter single gate driver D-mode GaN HEMT P-Cascode GaN HEMT

Übergeordnetes Werk:	In: Energies - MDPI AG, 2008, 14(2021), 12, p 3477
Übergeordnetes Werk:	volume:14 ; year:2021 ; number:12, p 3477

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/en14123477

Katalog-ID:	DOAJ030887100

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allfields	10.3390/en14123477 doi (DE-627)DOAJ030887100 (DE-599)DOAJ7966bcaddc1e48878fed851378c8527d DE-627 ger DE-627 rakwb eng Chih-Chiang Wu verfasserin aut A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper attempts to disclose a new GaN-based device, called the P-Cascode GaN HEMT, which uses only a single gate driver to control both the D-mode GaN and PMOS transistors. The merit of this synchronous buck converter is that it can reduce the circuit complexity of the synchronous buck converter, which is widely used to provide non-isolated power for low-voltage and high-current supply to system chips; therefore, the power conversion efficiency of the converter can be improved. In addition, the high side switch using a single D-mode GaN HEMT, which has no body diode, can prevent the bi-directional flow and thus reduce the power loss and cost compared to a design based on a series of two opposite MOSFETs. The experiment shows that the proposed P-Cascode GaN HEMT efficiency is above 98% when it operates at 500 kHz with 6 W output. With the input voltage at 12 V, the synchronous buck converter provides an adjustable regulated output voltage from 1.2 V to 10 V while delivering a maximum output current of 2 A. synchronous buck converter single gate driver D-mode GaN HEMT P-Cascode GaN HEMT Technology T Ching-Yao Liu verfasserin aut Guo-Bin Wang verfasserin aut Yueh-Tsung Shieh verfasserin aut Wei-Hua Chieng verfasserin aut Edward Yi Chang verfasserin aut In Energies MDPI AG, 2008 14(2021), 12, p 3477 (DE-627)572083742 (DE-600)2437446-5 19961073 nnns volume:14 year:2021 number:12, p 3477 https://doi.org/10.3390/en14123477 kostenfrei https://doaj.org/article/7966bcaddc1e48878fed851378c8527d kostenfrei https://www.mdpi.com/1996-1073/14/12/3477 kostenfrei https://doaj.org/toc/1996-1073 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 14 2021 12, p 3477
spelling	10.3390/en14123477 doi (DE-627)DOAJ030887100 (DE-599)DOAJ7966bcaddc1e48878fed851378c8527d DE-627 ger DE-627 rakwb eng Chih-Chiang Wu verfasserin aut A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper attempts to disclose a new GaN-based device, called the P-Cascode GaN HEMT, which uses only a single gate driver to control both the D-mode GaN and PMOS transistors. The merit of this synchronous buck converter is that it can reduce the circuit complexity of the synchronous buck converter, which is widely used to provide non-isolated power for low-voltage and high-current supply to system chips; therefore, the power conversion efficiency of the converter can be improved. In addition, the high side switch using a single D-mode GaN HEMT, which has no body diode, can prevent the bi-directional flow and thus reduce the power loss and cost compared to a design based on a series of two opposite MOSFETs. The experiment shows that the proposed P-Cascode GaN HEMT efficiency is above 98% when it operates at 500 kHz with 6 W output. With the input voltage at 12 V, the synchronous buck converter provides an adjustable regulated output voltage from 1.2 V to 10 V while delivering a maximum output current of 2 A. synchronous buck converter single gate driver D-mode GaN HEMT P-Cascode GaN HEMT Technology T Ching-Yao Liu verfasserin aut Guo-Bin Wang verfasserin aut Yueh-Tsung Shieh verfasserin aut Wei-Hua Chieng verfasserin aut Edward Yi Chang verfasserin aut In Energies MDPI AG, 2008 14(2021), 12, p 3477 (DE-627)572083742 (DE-600)2437446-5 19961073 nnns volume:14 year:2021 number:12, p 3477 https://doi.org/10.3390/en14123477 kostenfrei https://doaj.org/article/7966bcaddc1e48878fed851378c8527d kostenfrei https://www.mdpi.com/1996-1073/14/12/3477 kostenfrei https://doaj.org/toc/1996-1073 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 14 2021 12, p 3477
allfields_unstemmed	10.3390/en14123477 doi (DE-627)DOAJ030887100 (DE-599)DOAJ7966bcaddc1e48878fed851378c8527d DE-627 ger DE-627 rakwb eng Chih-Chiang Wu verfasserin aut A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper attempts to disclose a new GaN-based device, called the P-Cascode GaN HEMT, which uses only a single gate driver to control both the D-mode GaN and PMOS transistors. The merit of this synchronous buck converter is that it can reduce the circuit complexity of the synchronous buck converter, which is widely used to provide non-isolated power for low-voltage and high-current supply to system chips; therefore, the power conversion efficiency of the converter can be improved. In addition, the high side switch using a single D-mode GaN HEMT, which has no body diode, can prevent the bi-directional flow and thus reduce the power loss and cost compared to a design based on a series of two opposite MOSFETs. The experiment shows that the proposed P-Cascode GaN HEMT efficiency is above 98% when it operates at 500 kHz with 6 W output. With the input voltage at 12 V, the synchronous buck converter provides an adjustable regulated output voltage from 1.2 V to 10 V while delivering a maximum output current of 2 A. synchronous buck converter single gate driver D-mode GaN HEMT P-Cascode GaN HEMT Technology T Ching-Yao Liu verfasserin aut Guo-Bin Wang verfasserin aut Yueh-Tsung Shieh verfasserin aut Wei-Hua Chieng verfasserin aut Edward Yi Chang verfasserin aut In Energies MDPI AG, 2008 14(2021), 12, p 3477 (DE-627)572083742 (DE-600)2437446-5 19961073 nnns volume:14 year:2021 number:12, p 3477 https://doi.org/10.3390/en14123477 kostenfrei https://doaj.org/article/7966bcaddc1e48878fed851378c8527d kostenfrei https://www.mdpi.com/1996-1073/14/12/3477 kostenfrei https://doaj.org/toc/1996-1073 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 14 2021 12, p 3477
allfieldsGer	10.3390/en14123477 doi (DE-627)DOAJ030887100 (DE-599)DOAJ7966bcaddc1e48878fed851378c8527d DE-627 ger DE-627 rakwb eng Chih-Chiang Wu verfasserin aut A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper attempts to disclose a new GaN-based device, called the P-Cascode GaN HEMT, which uses only a single gate driver to control both the D-mode GaN and PMOS transistors. The merit of this synchronous buck converter is that it can reduce the circuit complexity of the synchronous buck converter, which is widely used to provide non-isolated power for low-voltage and high-current supply to system chips; therefore, the power conversion efficiency of the converter can be improved. In addition, the high side switch using a single D-mode GaN HEMT, which has no body diode, can prevent the bi-directional flow and thus reduce the power loss and cost compared to a design based on a series of two opposite MOSFETs. The experiment shows that the proposed P-Cascode GaN HEMT efficiency is above 98% when it operates at 500 kHz with 6 W output. With the input voltage at 12 V, the synchronous buck converter provides an adjustable regulated output voltage from 1.2 V to 10 V while delivering a maximum output current of 2 A. synchronous buck converter single gate driver D-mode GaN HEMT P-Cascode GaN HEMT Technology T Ching-Yao Liu verfasserin aut Guo-Bin Wang verfasserin aut Yueh-Tsung Shieh verfasserin aut Wei-Hua Chieng verfasserin aut Edward Yi Chang verfasserin aut In Energies MDPI AG, 2008 14(2021), 12, p 3477 (DE-627)572083742 (DE-600)2437446-5 19961073 nnns volume:14 year:2021 number:12, p 3477 https://doi.org/10.3390/en14123477 kostenfrei https://doaj.org/article/7966bcaddc1e48878fed851378c8527d kostenfrei https://www.mdpi.com/1996-1073/14/12/3477 kostenfrei https://doaj.org/toc/1996-1073 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 14 2021 12, p 3477
allfieldsSound	10.3390/en14123477 doi (DE-627)DOAJ030887100 (DE-599)DOAJ7966bcaddc1e48878fed851378c8527d DE-627 ger DE-627 rakwb eng Chih-Chiang Wu verfasserin aut A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper attempts to disclose a new GaN-based device, called the P-Cascode GaN HEMT, which uses only a single gate driver to control both the D-mode GaN and PMOS transistors. The merit of this synchronous buck converter is that it can reduce the circuit complexity of the synchronous buck converter, which is widely used to provide non-isolated power for low-voltage and high-current supply to system chips; therefore, the power conversion efficiency of the converter can be improved. In addition, the high side switch using a single D-mode GaN HEMT, which has no body diode, can prevent the bi-directional flow and thus reduce the power loss and cost compared to a design based on a series of two opposite MOSFETs. The experiment shows that the proposed P-Cascode GaN HEMT efficiency is above 98% when it operates at 500 kHz with 6 W output. With the input voltage at 12 V, the synchronous buck converter provides an adjustable regulated output voltage from 1.2 V to 10 V while delivering a maximum output current of 2 A. synchronous buck converter single gate driver D-mode GaN HEMT P-Cascode GaN HEMT Technology T Ching-Yao Liu verfasserin aut Guo-Bin Wang verfasserin aut Yueh-Tsung Shieh verfasserin aut Wei-Hua Chieng verfasserin aut Edward Yi Chang verfasserin aut In Energies MDPI AG, 2008 14(2021), 12, p 3477 (DE-627)572083742 (DE-600)2437446-5 19961073 nnns volume:14 year:2021 number:12, p 3477 https://doi.org/10.3390/en14123477 kostenfrei https://doaj.org/article/7966bcaddc1e48878fed851378c8527d kostenfrei https://www.mdpi.com/1996-1073/14/12/3477 kostenfrei https://doaj.org/toc/1996-1073 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 14 2021 12, p 3477
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authorswithroles_txt_mv	Chih-Chiang Wu @@aut@@ Ching-Yao Liu @@aut@@ Guo-Bin Wang @@aut@@ Yueh-Tsung Shieh @@aut@@ Wei-Hua Chieng @@aut@@ Edward Yi Chang @@aut@@
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author	Chih-Chiang Wu
spellingShingle	Chih-Chiang Wu misc synchronous buck converter misc single gate driver misc D-mode GaN HEMT misc P-Cascode GaN HEMT misc Technology misc T A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization
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topic_title	A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization synchronous buck converter single gate driver D-mode GaN HEMT P-Cascode GaN HEMT
topic	misc synchronous buck converter misc single gate driver misc D-mode GaN HEMT misc P-Cascode GaN HEMT misc Technology misc T
topic_unstemmed	misc synchronous buck converter misc single gate driver misc D-mode GaN HEMT misc P-Cascode GaN HEMT misc Technology misc T
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title	A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization
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title_full	A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization
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title_sort	new gan-based device, p-cascode gan hemt, and its synchronous buck converter circuit realization
title_auth	A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization
abstract	This paper attempts to disclose a new GaN-based device, called the P-Cascode GaN HEMT, which uses only a single gate driver to control both the D-mode GaN and PMOS transistors. The merit of this synchronous buck converter is that it can reduce the circuit complexity of the synchronous buck converter, which is widely used to provide non-isolated power for low-voltage and high-current supply to system chips; therefore, the power conversion efficiency of the converter can be improved. In addition, the high side switch using a single D-mode GaN HEMT, which has no body diode, can prevent the bi-directional flow and thus reduce the power loss and cost compared to a design based on a series of two opposite MOSFETs. The experiment shows that the proposed P-Cascode GaN HEMT efficiency is above 98% when it operates at 500 kHz with 6 W output. With the input voltage at 12 V, the synchronous buck converter provides an adjustable regulated output voltage from 1.2 V to 10 V while delivering a maximum output current of 2 A.
abstractGer	This paper attempts to disclose a new GaN-based device, called the P-Cascode GaN HEMT, which uses only a single gate driver to control both the D-mode GaN and PMOS transistors. The merit of this synchronous buck converter is that it can reduce the circuit complexity of the synchronous buck converter, which is widely used to provide non-isolated power for low-voltage and high-current supply to system chips; therefore, the power conversion efficiency of the converter can be improved. In addition, the high side switch using a single D-mode GaN HEMT, which has no body diode, can prevent the bi-directional flow and thus reduce the power loss and cost compared to a design based on a series of two opposite MOSFETs. The experiment shows that the proposed P-Cascode GaN HEMT efficiency is above 98% when it operates at 500 kHz with 6 W output. With the input voltage at 12 V, the synchronous buck converter provides an adjustable regulated output voltage from 1.2 V to 10 V while delivering a maximum output current of 2 A.
abstract_unstemmed	This paper attempts to disclose a new GaN-based device, called the P-Cascode GaN HEMT, which uses only a single gate driver to control both the D-mode GaN and PMOS transistors. The merit of this synchronous buck converter is that it can reduce the circuit complexity of the synchronous buck converter, which is widely used to provide non-isolated power for low-voltage and high-current supply to system chips; therefore, the power conversion efficiency of the converter can be improved. In addition, the high side switch using a single D-mode GaN HEMT, which has no body diode, can prevent the bi-directional flow and thus reduce the power loss and cost compared to a design based on a series of two opposite MOSFETs. The experiment shows that the proposed P-Cascode GaN HEMT efficiency is above 98% when it operates at 500 kHz with 6 W output. With the input voltage at 12 V, the synchronous buck converter provides an adjustable regulated output voltage from 1.2 V to 10 V while delivering a maximum output current of 2 A.
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title_short	A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization
url	https://doi.org/10.3390/en14123477 https://doaj.org/article/7966bcaddc1e48878fed851378c8527d https://www.mdpi.com/1996-1073/14/12/3477 https://doaj.org/toc/1996-1073
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