Strain-Induced Tunable Band Offsets in Blue Phosphorus and WSe<sub<2</sub< van der Waals Heterostructure
The electronic structure and band offsets of blue phosphorus/WSe<sub<2</sub< van der Waals (vdW) heterostructure are investigated via performing first-principles calculations. Blue phosphorus/WSe<sub<2</sub< vdW heterostructure exhibits modulation of bandgaps by the applied v...
Ausführliche Beschreibung
Autor*in: |
Lingxia Zhang [verfasserIn] Le Huang [verfasserIn] Tao Yin [verfasserIn] Yibin Yang [verfasserIn] |
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E-Artikel |
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Englisch |
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2021 |
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In: Crystals - MDPI AG, 2011, 11(2021), 5, p 470 |
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Übergeordnetes Werk: |
volume:11 ; year:2021 ; number:5, p 470 |
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DOI / URN: |
10.3390/cryst11050470 |
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Katalog-ID: |
DOAJ030889170 |
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520 | |a The electronic structure and band offsets of blue phosphorus/WSe<sub<2</sub< van der Waals (vdW) heterostructure are investigated via performing first-principles calculations. Blue phosphorus/WSe<sub<2</sub< vdW heterostructure exhibits modulation of bandgaps by the applied vertical compressive strain, and a large compressive strain of more than 23% leads to a semiconductor-to-metal transition. Blue phosphorus/WSe<sub<2</sub< vdW heterostructure is demonstrated to have a type-II band alignment, which promotes the spontaneous spatial separation of photo-excited electrons and holes. Furthermore, electrons concentrating in BlueP and holes in WSe<sub<2</sub< can be enhanced by applied compressive strain, resulting in an increase of carrier concentration. Therefore, these properties make blue phosphorus/WSe<sub<2</sub< vdW heterostructure a good candidate for future applications in photodetection. | ||
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10.3390/cryst11050470 doi (DE-627)DOAJ030889170 (DE-599)DOAJ9f1ecd66ccbb4d58899a7694730b10e8 DE-627 ger DE-627 rakwb eng QD901-999 Lingxia Zhang verfasserin aut Strain-Induced Tunable Band Offsets in Blue Phosphorus and WSe<sub<2</sub< van der Waals Heterostructure 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The electronic structure and band offsets of blue phosphorus/WSe<sub<2</sub< van der Waals (vdW) heterostructure are investigated via performing first-principles calculations. Blue phosphorus/WSe<sub<2</sub< vdW heterostructure exhibits modulation of bandgaps by the applied vertical compressive strain, and a large compressive strain of more than 23% leads to a semiconductor-to-metal transition. Blue phosphorus/WSe<sub<2</sub< vdW heterostructure is demonstrated to have a type-II band alignment, which promotes the spontaneous spatial separation of photo-excited electrons and holes. Furthermore, electrons concentrating in BlueP and holes in WSe<sub<2</sub< can be enhanced by applied compressive strain, resulting in an increase of carrier concentration. Therefore, these properties make blue phosphorus/WSe<sub<2</sub< vdW heterostructure a good candidate for future applications in photodetection. BlueP/WSe<sub<2</sub< vdW heterostructure external strain band gap tailoring first-principles calculations Crystallography Le Huang verfasserin aut Tao Yin verfasserin aut Yibin Yang verfasserin aut In Crystals MDPI AG, 2011 11(2021), 5, p 470 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:11 year:2021 number:5, p 470 https://doi.org/10.3390/cryst11050470 kostenfrei https://doaj.org/article/9f1ecd66ccbb4d58899a7694730b10e8 kostenfrei https://www.mdpi.com/2073-4352/11/5/470 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 5, p 470 |
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10.3390/cryst11050470 doi (DE-627)DOAJ030889170 (DE-599)DOAJ9f1ecd66ccbb4d58899a7694730b10e8 DE-627 ger DE-627 rakwb eng QD901-999 Lingxia Zhang verfasserin aut Strain-Induced Tunable Band Offsets in Blue Phosphorus and WSe<sub<2</sub< van der Waals Heterostructure 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The electronic structure and band offsets of blue phosphorus/WSe<sub<2</sub< van der Waals (vdW) heterostructure are investigated via performing first-principles calculations. Blue phosphorus/WSe<sub<2</sub< vdW heterostructure exhibits modulation of bandgaps by the applied vertical compressive strain, and a large compressive strain of more than 23% leads to a semiconductor-to-metal transition. Blue phosphorus/WSe<sub<2</sub< vdW heterostructure is demonstrated to have a type-II band alignment, which promotes the spontaneous spatial separation of photo-excited electrons and holes. Furthermore, electrons concentrating in BlueP and holes in WSe<sub<2</sub< can be enhanced by applied compressive strain, resulting in an increase of carrier concentration. Therefore, these properties make blue phosphorus/WSe<sub<2</sub< vdW heterostructure a good candidate for future applications in photodetection. BlueP/WSe<sub<2</sub< vdW heterostructure external strain band gap tailoring first-principles calculations Crystallography Le Huang verfasserin aut Tao Yin verfasserin aut Yibin Yang verfasserin aut In Crystals MDPI AG, 2011 11(2021), 5, p 470 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:11 year:2021 number:5, p 470 https://doi.org/10.3390/cryst11050470 kostenfrei https://doaj.org/article/9f1ecd66ccbb4d58899a7694730b10e8 kostenfrei https://www.mdpi.com/2073-4352/11/5/470 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 5, p 470 |
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10.3390/cryst11050470 doi (DE-627)DOAJ030889170 (DE-599)DOAJ9f1ecd66ccbb4d58899a7694730b10e8 DE-627 ger DE-627 rakwb eng QD901-999 Lingxia Zhang verfasserin aut Strain-Induced Tunable Band Offsets in Blue Phosphorus and WSe<sub<2</sub< van der Waals Heterostructure 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The electronic structure and band offsets of blue phosphorus/WSe<sub<2</sub< van der Waals (vdW) heterostructure are investigated via performing first-principles calculations. Blue phosphorus/WSe<sub<2</sub< vdW heterostructure exhibits modulation of bandgaps by the applied vertical compressive strain, and a large compressive strain of more than 23% leads to a semiconductor-to-metal transition. Blue phosphorus/WSe<sub<2</sub< vdW heterostructure is demonstrated to have a type-II band alignment, which promotes the spontaneous spatial separation of photo-excited electrons and holes. Furthermore, electrons concentrating in BlueP and holes in WSe<sub<2</sub< can be enhanced by applied compressive strain, resulting in an increase of carrier concentration. Therefore, these properties make blue phosphorus/WSe<sub<2</sub< vdW heterostructure a good candidate for future applications in photodetection. BlueP/WSe<sub<2</sub< vdW heterostructure external strain band gap tailoring first-principles calculations Crystallography Le Huang verfasserin aut Tao Yin verfasserin aut Yibin Yang verfasserin aut In Crystals MDPI AG, 2011 11(2021), 5, p 470 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:11 year:2021 number:5, p 470 https://doi.org/10.3390/cryst11050470 kostenfrei https://doaj.org/article/9f1ecd66ccbb4d58899a7694730b10e8 kostenfrei https://www.mdpi.com/2073-4352/11/5/470 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 5, p 470 |
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10.3390/cryst11050470 doi (DE-627)DOAJ030889170 (DE-599)DOAJ9f1ecd66ccbb4d58899a7694730b10e8 DE-627 ger DE-627 rakwb eng QD901-999 Lingxia Zhang verfasserin aut Strain-Induced Tunable Band Offsets in Blue Phosphorus and WSe<sub<2</sub< van der Waals Heterostructure 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The electronic structure and band offsets of blue phosphorus/WSe<sub<2</sub< van der Waals (vdW) heterostructure are investigated via performing first-principles calculations. Blue phosphorus/WSe<sub<2</sub< vdW heterostructure exhibits modulation of bandgaps by the applied vertical compressive strain, and a large compressive strain of more than 23% leads to a semiconductor-to-metal transition. Blue phosphorus/WSe<sub<2</sub< vdW heterostructure is demonstrated to have a type-II band alignment, which promotes the spontaneous spatial separation of photo-excited electrons and holes. Furthermore, electrons concentrating in BlueP and holes in WSe<sub<2</sub< can be enhanced by applied compressive strain, resulting in an increase of carrier concentration. Therefore, these properties make blue phosphorus/WSe<sub<2</sub< vdW heterostructure a good candidate for future applications in photodetection. BlueP/WSe<sub<2</sub< vdW heterostructure external strain band gap tailoring first-principles calculations Crystallography Le Huang verfasserin aut Tao Yin verfasserin aut Yibin Yang verfasserin aut In Crystals MDPI AG, 2011 11(2021), 5, p 470 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:11 year:2021 number:5, p 470 https://doi.org/10.3390/cryst11050470 kostenfrei https://doaj.org/article/9f1ecd66ccbb4d58899a7694730b10e8 kostenfrei https://www.mdpi.com/2073-4352/11/5/470 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 5, p 470 |
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Lingxia Zhang misc QD901-999 misc BlueP/WSe<sub<2</sub< vdW heterostructure misc external strain misc band gap tailoring misc first-principles calculations misc Crystallography Strain-Induced Tunable Band Offsets in Blue Phosphorus and WSe<sub<2</sub< van der Waals Heterostructure |
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QD901-999 Strain-Induced Tunable Band Offsets in Blue Phosphorus and WSe<sub<2</sub< van der Waals Heterostructure BlueP/WSe<sub<2</sub< vdW heterostructure external strain band gap tailoring first-principles calculations |
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Strain-Induced Tunable Band Offsets in Blue Phosphorus and WSe<sub<2</sub< van der Waals Heterostructure |
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The electronic structure and band offsets of blue phosphorus/WSe<sub<2</sub< van der Waals (vdW) heterostructure are investigated via performing first-principles calculations. Blue phosphorus/WSe<sub<2</sub< vdW heterostructure exhibits modulation of bandgaps by the applied vertical compressive strain, and a large compressive strain of more than 23% leads to a semiconductor-to-metal transition. Blue phosphorus/WSe<sub<2</sub< vdW heterostructure is demonstrated to have a type-II band alignment, which promotes the spontaneous spatial separation of photo-excited electrons and holes. Furthermore, electrons concentrating in BlueP and holes in WSe<sub<2</sub< can be enhanced by applied compressive strain, resulting in an increase of carrier concentration. Therefore, these properties make blue phosphorus/WSe<sub<2</sub< vdW heterostructure a good candidate for future applications in photodetection. |
abstractGer |
The electronic structure and band offsets of blue phosphorus/WSe<sub<2</sub< van der Waals (vdW) heterostructure are investigated via performing first-principles calculations. Blue phosphorus/WSe<sub<2</sub< vdW heterostructure exhibits modulation of bandgaps by the applied vertical compressive strain, and a large compressive strain of more than 23% leads to a semiconductor-to-metal transition. Blue phosphorus/WSe<sub<2</sub< vdW heterostructure is demonstrated to have a type-II band alignment, which promotes the spontaneous spatial separation of photo-excited electrons and holes. Furthermore, electrons concentrating in BlueP and holes in WSe<sub<2</sub< can be enhanced by applied compressive strain, resulting in an increase of carrier concentration. Therefore, these properties make blue phosphorus/WSe<sub<2</sub< vdW heterostructure a good candidate for future applications in photodetection. |
abstract_unstemmed |
The electronic structure and band offsets of blue phosphorus/WSe<sub<2</sub< van der Waals (vdW) heterostructure are investigated via performing first-principles calculations. Blue phosphorus/WSe<sub<2</sub< vdW heterostructure exhibits modulation of bandgaps by the applied vertical compressive strain, and a large compressive strain of more than 23% leads to a semiconductor-to-metal transition. Blue phosphorus/WSe<sub<2</sub< vdW heterostructure is demonstrated to have a type-II band alignment, which promotes the spontaneous spatial separation of photo-excited electrons and holes. Furthermore, electrons concentrating in BlueP and holes in WSe<sub<2</sub< can be enhanced by applied compressive strain, resulting in an increase of carrier concentration. Therefore, these properties make blue phosphorus/WSe<sub<2</sub< vdW heterostructure a good candidate for future applications in photodetection. |
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Strain-Induced Tunable Band Offsets in Blue Phosphorus and WSe<sub<2</sub< van der Waals Heterostructure |
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