Reducing Afterpulsing in InGaAs(P) Single-Photon Detectors with Hybrid Quenching

High detection efficiency appears to be associated with a high afterpulse probability for InP-based single-photon avalanche diodes. In this paper, we present a new hybrid quenching technique that combines the advantages of both fast active quenching and high-frequency gated-passive quenching, with t...
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Autor*in:	Junliang Liu [verfasserIn] Yining Xu [verfasserIn] Zheng Wang [verfasserIn] Yongfu Li [verfasserIn] Yi Gu [verfasserIn] Zhaojun Liu [verfasserIn] Xian Zhao [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2020

Schlagwörter:	single-photon detectors single-photon avalanche diodes avalanche photodiodes quenching circuits

Übergeordnetes Werk:	In: Sensors - MDPI AG, 2003, 20(2020), 16, p 4384
Übergeordnetes Werk:	volume:20 ; year:2020 ; number:16, p 4384

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/s20164384

Katalog-ID:	DOAJ031175732

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allfieldsSound	10.3390/s20164384 doi (DE-627)DOAJ031175732 (DE-599)DOAJb92004f3445a408cb2f469b49b3ef54d DE-627 ger DE-627 rakwb eng TP1-1185 Junliang Liu verfasserin aut Reducing Afterpulsing in InGaAs(P) Single-Photon Detectors with Hybrid Quenching 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier High detection efficiency appears to be associated with a high afterpulse probability for InP-based single-photon avalanche diodes. In this paper, we present a new hybrid quenching technique that combines the advantages of both fast active quenching and high-frequency gated-passive quenching, with the aim of suppressing higher-order afterpulsing effects. Our results showed that the hybrid quenching method contributed to a 10% to 85% reduction of afterpulses with a gate-free detection efficiency of 4% to 10% at 1.06 <inline-formula<<math display="inline"<<semantics<<mi mathvariant="sans-serif"<μ</mi<</semantics<</math<</inline-formula<m, with 40 ns dead time, compared with the counter-based hold-off method. With the improvement of the afterpulsing performance of high-frequency gated single-photon detectors, especially at relatively high average detection efficiencies with wide gate widths, the proposed method enables their use as high-performance free-running detectors. single-photon detectors single-photon avalanche diodes avalanche photodiodes quenching circuits Chemical technology Yining Xu verfasserin aut Zheng Wang verfasserin aut Yongfu Li verfasserin aut Yi Gu verfasserin aut Zhaojun Liu verfasserin aut Xian Zhao verfasserin aut In Sensors MDPI AG, 2003 20(2020), 16, p 4384 (DE-627)331640910 (DE-600)2052857-7 14248220 nnns volume:20 year:2020 number:16, p 4384 https://doi.org/10.3390/s20164384 kostenfrei https://doaj.org/article/b92004f3445a408cb2f469b49b3ef54d kostenfrei https://www.mdpi.com/1424-8220/20/16/4384 kostenfrei https://doaj.org/toc/1424-8220 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2111 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 20 2020 16, p 4384
language	English
source	In Sensors 20(2020), 16, p 4384 volume:20 year:2020 number:16, p 4384
sourceStr	In Sensors 20(2020), 16, p 4384 volume:20 year:2020 number:16, p 4384
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institution	findex.gbv.de
topic_facet	single-photon detectors single-photon avalanche diodes avalanche photodiodes quenching circuits Chemical technology
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container_title	Sensors
authorswithroles_txt_mv	Junliang Liu @@aut@@ Yining Xu @@aut@@ Zheng Wang @@aut@@ Yongfu Li @@aut@@ Yi Gu @@aut@@ Zhaojun Liu @@aut@@ Xian Zhao @@aut@@
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callnumber-first	T - Technology
author	Junliang Liu
spellingShingle	Junliang Liu misc TP1-1185 misc single-photon detectors misc single-photon avalanche diodes misc avalanche photodiodes misc quenching circuits misc Chemical technology Reducing Afterpulsing in InGaAs(P) Single-Photon Detectors with Hybrid Quenching
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topic_title	TP1-1185 Reducing Afterpulsing in InGaAs(P) Single-Photon Detectors with Hybrid Quenching single-photon detectors single-photon avalanche diodes avalanche photodiodes quenching circuits
topic	misc TP1-1185 misc single-photon detectors misc single-photon avalanche diodes misc avalanche photodiodes misc quenching circuits misc Chemical technology
topic_unstemmed	misc TP1-1185 misc single-photon detectors misc single-photon avalanche diodes misc avalanche photodiodes misc quenching circuits misc Chemical technology
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title	Reducing Afterpulsing in InGaAs(P) Single-Photon Detectors with Hybrid Quenching
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title_sort	reducing afterpulsing in ingaas(p) single-photon detectors with hybrid quenching
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title_auth	Reducing Afterpulsing in InGaAs(P) Single-Photon Detectors with Hybrid Quenching
abstract	High detection efficiency appears to be associated with a high afterpulse probability for InP-based single-photon avalanche diodes. In this paper, we present a new hybrid quenching technique that combines the advantages of both fast active quenching and high-frequency gated-passive quenching, with the aim of suppressing higher-order afterpulsing effects. Our results showed that the hybrid quenching method contributed to a 10% to 85% reduction of afterpulses with a gate-free detection efficiency of 4% to 10% at 1.06 <inline-formula<<math display="inline"<<semantics<<mi mathvariant="sans-serif"<μ</mi<</semantics<</math<</inline-formula<m, with 40 ns dead time, compared with the counter-based hold-off method. With the improvement of the afterpulsing performance of high-frequency gated single-photon detectors, especially at relatively high average detection efficiencies with wide gate widths, the proposed method enables their use as high-performance free-running detectors.
abstractGer	High detection efficiency appears to be associated with a high afterpulse probability for InP-based single-photon avalanche diodes. In this paper, we present a new hybrid quenching technique that combines the advantages of both fast active quenching and high-frequency gated-passive quenching, with the aim of suppressing higher-order afterpulsing effects. Our results showed that the hybrid quenching method contributed to a 10% to 85% reduction of afterpulses with a gate-free detection efficiency of 4% to 10% at 1.06 <inline-formula<<math display="inline"<<semantics<<mi mathvariant="sans-serif"<μ</mi<</semantics<</math<</inline-formula<m, with 40 ns dead time, compared with the counter-based hold-off method. With the improvement of the afterpulsing performance of high-frequency gated single-photon detectors, especially at relatively high average detection efficiencies with wide gate widths, the proposed method enables their use as high-performance free-running detectors.
abstract_unstemmed	High detection efficiency appears to be associated with a high afterpulse probability for InP-based single-photon avalanche diodes. In this paper, we present a new hybrid quenching technique that combines the advantages of both fast active quenching and high-frequency gated-passive quenching, with the aim of suppressing higher-order afterpulsing effects. Our results showed that the hybrid quenching method contributed to a 10% to 85% reduction of afterpulses with a gate-free detection efficiency of 4% to 10% at 1.06 <inline-formula<<math display="inline"<<semantics<<mi mathvariant="sans-serif"<μ</mi<</semantics<</math<</inline-formula<m, with 40 ns dead time, compared with the counter-based hold-off method. With the improvement of the afterpulsing performance of high-frequency gated single-photon detectors, especially at relatively high average detection efficiencies with wide gate widths, the proposed method enables their use as high-performance free-running detectors.
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title_short	Reducing Afterpulsing in InGaAs(P) Single-Photon Detectors with Hybrid Quenching
url	https://doi.org/10.3390/s20164384 https://doaj.org/article/b92004f3445a408cb2f469b49b3ef54d https://www.mdpi.com/1424-8220/20/16/4384 https://doaj.org/toc/1424-8220
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