Gallium Nitride Normally Off MOSFET Using Dual-Metal-Gate Structure for the Improvement in Current Drivability

A gallium nitride (GaN)-based normally off metal–oxide–semiconductor field-effect transistor (MOSFET) using a dual-metal-gate (DMG) structure was proposed and fabricated to improve current drivability. Normally off operation with a high <i<V</i<<sub<th</sub< of 2.3 V was obta...
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Autor*in:	Young Jun Yoon [verfasserIn] Jae Sang Lee [verfasserIn] Dong-Seok Kim [verfasserIn] Jung-Hee Lee [verfasserIn] In Man Kang [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2020

Schlagwörter:	GaN recessed-gate normally-off dual-metal-gate structure

Übergeordnetes Werk:	In: Electronics - MDPI AG, 2013, 9(2020), 9, p 1402
Übergeordnetes Werk:	volume:9 ; year:2020 ; number:9, p 1402

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/electronics9091402

Katalog-ID:	DOAJ031523412

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language	English
source	In Electronics 9(2020), 9, p 1402 volume:9 year:2020 number:9, p 1402
sourceStr	In Electronics 9(2020), 9, p 1402 volume:9 year:2020 number:9, p 1402
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institution	findex.gbv.de
topic_facet	GaN recessed-gate normally-off dual-metal-gate structure Electronics
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container_title	Electronics
authorswithroles_txt_mv	Young Jun Yoon @@aut@@ Jae Sang Lee @@aut@@ Dong-Seok Kim @@aut@@ Jung-Hee Lee @@aut@@ In Man Kang @@aut@@
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callnumber-first	T - Technology
author	Young Jun Yoon
spellingShingle	Young Jun Yoon misc TK7800-8360 misc GaN misc recessed-gate misc normally-off misc dual-metal-gate structure misc Electronics Gallium Nitride Normally Off MOSFET Using Dual-Metal-Gate Structure for the Improvement in Current Drivability
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topic_title	TK7800-8360 Gallium Nitride Normally Off MOSFET Using Dual-Metal-Gate Structure for the Improvement in Current Drivability GaN recessed-gate normally-off dual-metal-gate structure
topic	misc TK7800-8360 misc GaN misc recessed-gate misc normally-off misc dual-metal-gate structure misc Electronics
topic_unstemmed	misc TK7800-8360 misc GaN misc recessed-gate misc normally-off misc dual-metal-gate structure misc Electronics
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title	Gallium Nitride Normally Off MOSFET Using Dual-Metal-Gate Structure for the Improvement in Current Drivability
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title_full	Gallium Nitride Normally Off MOSFET Using Dual-Metal-Gate Structure for the Improvement in Current Drivability
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author_browse	Young Jun Yoon Jae Sang Lee Dong-Seok Kim Jung-Hee Lee In Man Kang
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title_sort	gallium nitride normally off mosfet using dual-metal-gate structure for the improvement in current drivability
callnumber	TK7800-8360
title_auth	Gallium Nitride Normally Off MOSFET Using Dual-Metal-Gate Structure for the Improvement in Current Drivability
abstract	A gallium nitride (GaN)-based normally off metal–oxide–semiconductor field-effect transistor (MOSFET) using a dual-metal-gate (DMG) structure was proposed and fabricated to improve current drivability. Normally off operation with a high <i<V</i<<sub<th</sub< of 2.3 V was obtained using a Cl<sub<2</sub</BCl<sub<3</sub<-based recess etching process. The DMG structure was employed to improve current characteristics, which can be degraded by recess etching. The <i<I</i<<sub<D</sub< and <i<g</i<<sub<m</sub< of a DMG-based device with nickel (Ni)-aluminum (Al) were improved by 42.1% and 30.9%, respectively, in comparison to the performances of a single-metal-gate-based device with Ni because the DMG structure increased electron velocity in the channel region. This demonstrates that the DMG structure with a large work-function difference significantly improves the carrier transport efficiency. GaN-based recessed-gate MOSFETs based on the DMG structure hold promising potentials for high-efficiency power devices.
abstractGer	A gallium nitride (GaN)-based normally off metal–oxide–semiconductor field-effect transistor (MOSFET) using a dual-metal-gate (DMG) structure was proposed and fabricated to improve current drivability. Normally off operation with a high <i<V</i<<sub<th</sub< of 2.3 V was obtained using a Cl<sub<2</sub</BCl<sub<3</sub<-based recess etching process. The DMG structure was employed to improve current characteristics, which can be degraded by recess etching. The <i<I</i<<sub<D</sub< and <i<g</i<<sub<m</sub< of a DMG-based device with nickel (Ni)-aluminum (Al) were improved by 42.1% and 30.9%, respectively, in comparison to the performances of a single-metal-gate-based device with Ni because the DMG structure increased electron velocity in the channel region. This demonstrates that the DMG structure with a large work-function difference significantly improves the carrier transport efficiency. GaN-based recessed-gate MOSFETs based on the DMG structure hold promising potentials for high-efficiency power devices.
abstract_unstemmed	A gallium nitride (GaN)-based normally off metal–oxide–semiconductor field-effect transistor (MOSFET) using a dual-metal-gate (DMG) structure was proposed and fabricated to improve current drivability. Normally off operation with a high <i<V</i<<sub<th</sub< of 2.3 V was obtained using a Cl<sub<2</sub</BCl<sub<3</sub<-based recess etching process. The DMG structure was employed to improve current characteristics, which can be degraded by recess etching. The <i<I</i<<sub<D</sub< and <i<g</i<<sub<m</sub< of a DMG-based device with nickel (Ni)-aluminum (Al) were improved by 42.1% and 30.9%, respectively, in comparison to the performances of a single-metal-gate-based device with Ni because the DMG structure increased electron velocity in the channel region. This demonstrates that the DMG structure with a large work-function difference significantly improves the carrier transport efficiency. GaN-based recessed-gate MOSFETs based on the DMG structure hold promising potentials for high-efficiency power devices.
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title_short	Gallium Nitride Normally Off MOSFET Using Dual-Metal-Gate Structure for the Improvement in Current Drivability
url	https://doi.org/10.3390/electronics9091402 https://doaj.org/article/73d8b5a5d35744bd88b9642764ed9845 https://www.mdpi.com/2079-9292/9/9/1402 https://doaj.org/toc/2079-9292
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up_date	2024-07-03T21:03:39.080Z
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