Analysis of the Radiation Attenuation Parameters of Cu<sub<2</sub<HgI<sub<4</sub<, Ag<sub<2</sub<HgI<sub<4</sub<, and (Cu/Ag/Hg I) Semiconductor Compounds

This analysis aims to determine photon attenuation for five different ternary and binary iodide compounds using Phy-X/PSD software. For a broad range of photon energies between 0.015 and 15 MeV, the mass attenuation coefficient (MAC), linear attenuation coefficient (LAC), half-value layer (HVL), ten...
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Autor*in:	Heba Y. Zahran [verfasserIn] El Sayed Yousef [verfasserIn] Mohammed S. Alqahtani [verfasserIn] Manuela Reben [verfasserIn] Hamed Algarni [verfasserIn] Ahmad Umar [verfasserIn] Hasan B. Albargi [verfasserIn] Ibrahim S. Yahia [verfasserIn] Nehal Sabry [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2022

Schlagwörter:	Cu Ag semiconductor compounds gamma-ray attenuation fast neutron removal cross-section build-up factors

Übergeordnetes Werk:	In: Crystals - MDPI AG, 2011, 12(2022), 2, p 276
Übergeordnetes Werk:	volume:12 ; year:2022 ; number:2, p 276

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/cryst12020276

Katalog-ID:	DOAJ031580564

Internformat


LEADER	01000caa a22002652 4500
001	DOAJ031580564
003	DE-627
005	20240414190624.0
007	cr uuu---uuuuu
008	230226s2022 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.3390/cryst12020276 \|2 doi
035			\|a (DE-627)DOAJ031580564
035			\|a (DE-599)DOAJ977ee38c0d0a41bea1579dd0d70f8080
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
050		0	\|a QD901-999
100	0		\|a Heba Y. Zahran \|e verfasserin \|4 aut
245	1	0	\|a Analysis of the Radiation Attenuation Parameters of Cu<sub<2</sub<HgI<sub<4</sub<, Ag<sub<2</sub<HgI<sub<4</sub<, and (Cu/Ag/Hg I) Semiconductor Compounds
264		1	\|c 2022
336			\|a Text \|b txt \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
520			\|a This analysis aims to determine photon attenuation for five different ternary and binary iodide compounds using Phy-X/PSD software. For a broad range of photon energies between 0.015 and 15 MeV, the mass attenuation coefficient (MAC), linear attenuation coefficient (LAC), half-value layer (HVL), tenth-value layer (TVL), and mean free path (MFP) for the samples of Cu<sub<2</sub<HgI<sub<4</sub<, Ag<sub<2</sub<HgI<sub<4</sub<, CuI, AgI, and HgI were calculated. For illustration, the following values of TVL apply at 1 MeV: S1: 6.062 cm, S2: 6.209 cm, S3: 6.929 cm, S4: 6.897 cm, and S5: 4.568 cm. Some important parameters, such as total atomic cross-sections (ACS), electronic cross-sections (ECS), the effective atomic numbers (Zeff), effective electron density (Neff), and effective conductivity (Ceff) of the samples were also calculated. Additionally, exposure buildup factors (EBF) and energy-absorption buildup factor (EABF) were estimated. These data on the radiation characteristics of our samples could be useful for gamma attenuation. The HgI sample has the highest FNRCS values (0.0892) relative to the other tested samples showing good neutron attenuation features. The CuI sample shows low gamma attenuation features; in contrast, it shows high neutron attenuation features.
650		4	\|a Cu<sub<2</sub<HgI<sub<4</sub<
650		4	\|a Ag<sub<2</sub<HgI<sub<4</sub<
650		4	\|a semiconductor compounds
650		4	\|a gamma-ray attenuation
650		4	\|a fast neutron removal cross-section
650		4	\|a build-up factors
653		0	\|a Crystallography
700	0		\|a El Sayed Yousef \|e verfasserin \|4 aut
700	0		\|a Mohammed S. Alqahtani \|e verfasserin \|4 aut
700	0		\|a Manuela Reben \|e verfasserin \|4 aut
700	0		\|a Hamed Algarni \|e verfasserin \|4 aut
700	0		\|a Ahmad Umar \|e verfasserin \|4 aut
700	0		\|a Hasan B. Albargi \|e verfasserin \|4 aut
700	0		\|a Ibrahim S. Yahia \|e verfasserin \|4 aut
700	0		\|a Nehal Sabry \|e verfasserin \|4 aut
773	0	8	\|i In \|t Crystals \|d MDPI AG, 2011 \|g 12(2022), 2, p 276 \|w (DE-627)718303067 \|w (DE-600)2661516-2 \|x 20734352 \|7 nnns
773	1	8	\|g volume:12 \|g year:2022 \|g number:2, p 276
856	4	0	\|u https://doi.org/10.3390/cryst12020276 \|z kostenfrei
856	4	0	\|u https://doaj.org/article/977ee38c0d0a41bea1579dd0d70f8080 \|z kostenfrei
856	4	0	\|u https://www.mdpi.com/2073-4352/12/2/276 \|z kostenfrei
856	4	2	\|u https://doaj.org/toc/2073-4352 \|y Journal toc \|z kostenfrei
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_DOAJ
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_39
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_95
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_151
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_213
912			\|a GBV_ILN_230
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_602
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_4012
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4367
912			\|a GBV_ILN_4700
951			\|a AR
952			\|d 12 \|j 2022 \|e 2, p 276

Indexfelder

author_variant	h y z hyz e s y esy m s a msa m r mr h a ha a u au h b a hba i s y isy n s ns
matchkey_str	article:20734352:2022----::nlssfhrdainteutoprmtrocsbsbgsbsbgu2uhiu4ua
hierarchy_sort_str	2022
callnumber-subject-code	QD
publishDate	2022
allfields	10.3390/cryst12020276 doi (DE-627)DOAJ031580564 (DE-599)DOAJ977ee38c0d0a41bea1579dd0d70f8080 DE-627 ger DE-627 rakwb eng QD901-999 Heba Y. Zahran verfasserin aut Analysis of the Radiation Attenuation Parameters of Cu<sub<2</sub<HgI<sub<4</sub<, Ag<sub<2</sub<HgI<sub<4</sub<, and (Cu/Ag/Hg I) Semiconductor Compounds 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This analysis aims to determine photon attenuation for five different ternary and binary iodide compounds using Phy-X/PSD software. For a broad range of photon energies between 0.015 and 15 MeV, the mass attenuation coefficient (MAC), linear attenuation coefficient (LAC), half-value layer (HVL), tenth-value layer (TVL), and mean free path (MFP) for the samples of Cu<sub<2</sub<HgI<sub<4</sub<, Ag<sub<2</sub<HgI<sub<4</sub<, CuI, AgI, and HgI were calculated. For illustration, the following values of TVL apply at 1 MeV: S1: 6.062 cm, S2: 6.209 cm, S3: 6.929 cm, S4: 6.897 cm, and S5: 4.568 cm. Some important parameters, such as total atomic cross-sections (ACS), electronic cross-sections (ECS), the effective atomic numbers (Zeff), effective electron density (Neff), and effective conductivity (Ceff) of the samples were also calculated. Additionally, exposure buildup factors (EBF) and energy-absorption buildup factor (EABF) were estimated. These data on the radiation characteristics of our samples could be useful for gamma attenuation. The HgI sample has the highest FNRCS values (0.0892) relative to the other tested samples showing good neutron attenuation features. The CuI sample shows low gamma attenuation features; in contrast, it shows high neutron attenuation features. Cu<sub<2</sub<HgI<sub<4</sub< Ag<sub<2</sub<HgI<sub<4</sub< semiconductor compounds gamma-ray attenuation fast neutron removal cross-section build-up factors Crystallography El Sayed Yousef verfasserin aut Mohammed S. Alqahtani verfasserin aut Manuela Reben verfasserin aut Hamed Algarni verfasserin aut Ahmad Umar verfasserin aut Hasan B. Albargi verfasserin aut Ibrahim S. Yahia verfasserin aut Nehal Sabry verfasserin aut In Crystals MDPI AG, 2011 12(2022), 2, p 276 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:12 year:2022 number:2, p 276 https://doi.org/10.3390/cryst12020276 kostenfrei https://doaj.org/article/977ee38c0d0a41bea1579dd0d70f8080 kostenfrei https://www.mdpi.com/2073-4352/12/2/276 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2022 2, p 276
spelling	10.3390/cryst12020276 doi (DE-627)DOAJ031580564 (DE-599)DOAJ977ee38c0d0a41bea1579dd0d70f8080 DE-627 ger DE-627 rakwb eng QD901-999 Heba Y. Zahran verfasserin aut Analysis of the Radiation Attenuation Parameters of Cu<sub<2</sub<HgI<sub<4</sub<, Ag<sub<2</sub<HgI<sub<4</sub<, and (Cu/Ag/Hg I) Semiconductor Compounds 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This analysis aims to determine photon attenuation for five different ternary and binary iodide compounds using Phy-X/PSD software. For a broad range of photon energies between 0.015 and 15 MeV, the mass attenuation coefficient (MAC), linear attenuation coefficient (LAC), half-value layer (HVL), tenth-value layer (TVL), and mean free path (MFP) for the samples of Cu<sub<2</sub<HgI<sub<4</sub<, Ag<sub<2</sub<HgI<sub<4</sub<, CuI, AgI, and HgI were calculated. For illustration, the following values of TVL apply at 1 MeV: S1: 6.062 cm, S2: 6.209 cm, S3: 6.929 cm, S4: 6.897 cm, and S5: 4.568 cm. Some important parameters, such as total atomic cross-sections (ACS), electronic cross-sections (ECS), the effective atomic numbers (Zeff), effective electron density (Neff), and effective conductivity (Ceff) of the samples were also calculated. Additionally, exposure buildup factors (EBF) and energy-absorption buildup factor (EABF) were estimated. These data on the radiation characteristics of our samples could be useful for gamma attenuation. The HgI sample has the highest FNRCS values (0.0892) relative to the other tested samples showing good neutron attenuation features. The CuI sample shows low gamma attenuation features; in contrast, it shows high neutron attenuation features. Cu<sub<2</sub<HgI<sub<4</sub< Ag<sub<2</sub<HgI<sub<4</sub< semiconductor compounds gamma-ray attenuation fast neutron removal cross-section build-up factors Crystallography El Sayed Yousef verfasserin aut Mohammed S. Alqahtani verfasserin aut Manuela Reben verfasserin aut Hamed Algarni verfasserin aut Ahmad Umar verfasserin aut Hasan B. Albargi verfasserin aut Ibrahim S. Yahia verfasserin aut Nehal Sabry verfasserin aut In Crystals MDPI AG, 2011 12(2022), 2, p 276 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:12 year:2022 number:2, p 276 https://doi.org/10.3390/cryst12020276 kostenfrei https://doaj.org/article/977ee38c0d0a41bea1579dd0d70f8080 kostenfrei https://www.mdpi.com/2073-4352/12/2/276 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2022 2, p 276
allfields_unstemmed	10.3390/cryst12020276 doi (DE-627)DOAJ031580564 (DE-599)DOAJ977ee38c0d0a41bea1579dd0d70f8080 DE-627 ger DE-627 rakwb eng QD901-999 Heba Y. Zahran verfasserin aut Analysis of the Radiation Attenuation Parameters of Cu<sub<2</sub<HgI<sub<4</sub<, Ag<sub<2</sub<HgI<sub<4</sub<, and (Cu/Ag/Hg I) Semiconductor Compounds 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This analysis aims to determine photon attenuation for five different ternary and binary iodide compounds using Phy-X/PSD software. For a broad range of photon energies between 0.015 and 15 MeV, the mass attenuation coefficient (MAC), linear attenuation coefficient (LAC), half-value layer (HVL), tenth-value layer (TVL), and mean free path (MFP) for the samples of Cu<sub<2</sub<HgI<sub<4</sub<, Ag<sub<2</sub<HgI<sub<4</sub<, CuI, AgI, and HgI were calculated. For illustration, the following values of TVL apply at 1 MeV: S1: 6.062 cm, S2: 6.209 cm, S3: 6.929 cm, S4: 6.897 cm, and S5: 4.568 cm. Some important parameters, such as total atomic cross-sections (ACS), electronic cross-sections (ECS), the effective atomic numbers (Zeff), effective electron density (Neff), and effective conductivity (Ceff) of the samples were also calculated. Additionally, exposure buildup factors (EBF) and energy-absorption buildup factor (EABF) were estimated. These data on the radiation characteristics of our samples could be useful for gamma attenuation. The HgI sample has the highest FNRCS values (0.0892) relative to the other tested samples showing good neutron attenuation features. The CuI sample shows low gamma attenuation features; in contrast, it shows high neutron attenuation features. Cu<sub<2</sub<HgI<sub<4</sub< Ag<sub<2</sub<HgI<sub<4</sub< semiconductor compounds gamma-ray attenuation fast neutron removal cross-section build-up factors Crystallography El Sayed Yousef verfasserin aut Mohammed S. Alqahtani verfasserin aut Manuela Reben verfasserin aut Hamed Algarni verfasserin aut Ahmad Umar verfasserin aut Hasan B. Albargi verfasserin aut Ibrahim S. Yahia verfasserin aut Nehal Sabry verfasserin aut In Crystals MDPI AG, 2011 12(2022), 2, p 276 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:12 year:2022 number:2, p 276 https://doi.org/10.3390/cryst12020276 kostenfrei https://doaj.org/article/977ee38c0d0a41bea1579dd0d70f8080 kostenfrei https://www.mdpi.com/2073-4352/12/2/276 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2022 2, p 276
allfieldsGer	10.3390/cryst12020276 doi (DE-627)DOAJ031580564 (DE-599)DOAJ977ee38c0d0a41bea1579dd0d70f8080 DE-627 ger DE-627 rakwb eng QD901-999 Heba Y. Zahran verfasserin aut Analysis of the Radiation Attenuation Parameters of Cu<sub<2</sub<HgI<sub<4</sub<, Ag<sub<2</sub<HgI<sub<4</sub<, and (Cu/Ag/Hg I) Semiconductor Compounds 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This analysis aims to determine photon attenuation for five different ternary and binary iodide compounds using Phy-X/PSD software. For a broad range of photon energies between 0.015 and 15 MeV, the mass attenuation coefficient (MAC), linear attenuation coefficient (LAC), half-value layer (HVL), tenth-value layer (TVL), and mean free path (MFP) for the samples of Cu<sub<2</sub<HgI<sub<4</sub<, Ag<sub<2</sub<HgI<sub<4</sub<, CuI, AgI, and HgI were calculated. For illustration, the following values of TVL apply at 1 MeV: S1: 6.062 cm, S2: 6.209 cm, S3: 6.929 cm, S4: 6.897 cm, and S5: 4.568 cm. Some important parameters, such as total atomic cross-sections (ACS), electronic cross-sections (ECS), the effective atomic numbers (Zeff), effective electron density (Neff), and effective conductivity (Ceff) of the samples were also calculated. Additionally, exposure buildup factors (EBF) and energy-absorption buildup factor (EABF) were estimated. These data on the radiation characteristics of our samples could be useful for gamma attenuation. The HgI sample has the highest FNRCS values (0.0892) relative to the other tested samples showing good neutron attenuation features. The CuI sample shows low gamma attenuation features; in contrast, it shows high neutron attenuation features. Cu<sub<2</sub<HgI<sub<4</sub< Ag<sub<2</sub<HgI<sub<4</sub< semiconductor compounds gamma-ray attenuation fast neutron removal cross-section build-up factors Crystallography El Sayed Yousef verfasserin aut Mohammed S. Alqahtani verfasserin aut Manuela Reben verfasserin aut Hamed Algarni verfasserin aut Ahmad Umar verfasserin aut Hasan B. Albargi verfasserin aut Ibrahim S. Yahia verfasserin aut Nehal Sabry verfasserin aut In Crystals MDPI AG, 2011 12(2022), 2, p 276 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:12 year:2022 number:2, p 276 https://doi.org/10.3390/cryst12020276 kostenfrei https://doaj.org/article/977ee38c0d0a41bea1579dd0d70f8080 kostenfrei https://www.mdpi.com/2073-4352/12/2/276 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2022 2, p 276
allfieldsSound	10.3390/cryst12020276 doi (DE-627)DOAJ031580564 (DE-599)DOAJ977ee38c0d0a41bea1579dd0d70f8080 DE-627 ger DE-627 rakwb eng QD901-999 Heba Y. Zahran verfasserin aut Analysis of the Radiation Attenuation Parameters of Cu<sub<2</sub<HgI<sub<4</sub<, Ag<sub<2</sub<HgI<sub<4</sub<, and (Cu/Ag/Hg I) Semiconductor Compounds 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This analysis aims to determine photon attenuation for five different ternary and binary iodide compounds using Phy-X/PSD software. For a broad range of photon energies between 0.015 and 15 MeV, the mass attenuation coefficient (MAC), linear attenuation coefficient (LAC), half-value layer (HVL), tenth-value layer (TVL), and mean free path (MFP) for the samples of Cu<sub<2</sub<HgI<sub<4</sub<, Ag<sub<2</sub<HgI<sub<4</sub<, CuI, AgI, and HgI were calculated. For illustration, the following values of TVL apply at 1 MeV: S1: 6.062 cm, S2: 6.209 cm, S3: 6.929 cm, S4: 6.897 cm, and S5: 4.568 cm. Some important parameters, such as total atomic cross-sections (ACS), electronic cross-sections (ECS), the effective atomic numbers (Zeff), effective electron density (Neff), and effective conductivity (Ceff) of the samples were also calculated. Additionally, exposure buildup factors (EBF) and energy-absorption buildup factor (EABF) were estimated. These data on the radiation characteristics of our samples could be useful for gamma attenuation. The HgI sample has the highest FNRCS values (0.0892) relative to the other tested samples showing good neutron attenuation features. The CuI sample shows low gamma attenuation features; in contrast, it shows high neutron attenuation features. Cu<sub<2</sub<HgI<sub<4</sub< Ag<sub<2</sub<HgI<sub<4</sub< semiconductor compounds gamma-ray attenuation fast neutron removal cross-section build-up factors Crystallography El Sayed Yousef verfasserin aut Mohammed S. Alqahtani verfasserin aut Manuela Reben verfasserin aut Hamed Algarni verfasserin aut Ahmad Umar verfasserin aut Hasan B. Albargi verfasserin aut Ibrahim S. Yahia verfasserin aut Nehal Sabry verfasserin aut In Crystals MDPI AG, 2011 12(2022), 2, p 276 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:12 year:2022 number:2, p 276 https://doi.org/10.3390/cryst12020276 kostenfrei https://doaj.org/article/977ee38c0d0a41bea1579dd0d70f8080 kostenfrei https://www.mdpi.com/2073-4352/12/2/276 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2022 2, p 276
language	English
source	In Crystals 12(2022), 2, p 276 volume:12 year:2022 number:2, p 276
sourceStr	In Crystals 12(2022), 2, p 276 volume:12 year:2022 number:2, p 276
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Cu<sub<2</sub<HgI<sub<4</sub< Ag<sub<2</sub<HgI<sub<4</sub< semiconductor compounds gamma-ray attenuation fast neutron removal cross-section build-up factors Crystallography
isfreeaccess_bool	true
container_title	Crystals
authorswithroles_txt_mv	Heba Y. Zahran @@aut@@ El Sayed Yousef @@aut@@ Mohammed S. Alqahtani @@aut@@ Manuela Reben @@aut@@ Hamed Algarni @@aut@@ Ahmad Umar @@aut@@ Hasan B. Albargi @@aut@@ Ibrahim S. Yahia @@aut@@ Nehal Sabry @@aut@@
publishDateDaySort_date	2022-01-01T00:00:00Z
hierarchy_top_id	718303067
id	DOAJ031580564
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ031580564</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20240414190624.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230226s2022 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.3390/cryst12020276</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ031580564</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJ977ee38c0d0a41bea1579dd0d70f8080</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QD901-999</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Heba Y. Zahran</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Analysis of the Radiation Attenuation Parameters of Cu<sub<2</sub<HgI<sub<4</sub<, Ag<sub<2</sub<HgI<sub<4</sub<, and (Cu/Ag/Hg I) Semiconductor Compounds</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2022</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">This analysis aims to determine photon attenuation for five different ternary and binary iodide compounds using Phy-X/PSD software. For a broad range of photon energies between 0.015 and 15 MeV, the mass attenuation coefficient (MAC), linear attenuation coefficient (LAC), half-value layer (HVL), tenth-value layer (TVL), and mean free path (MFP) for the samples of Cu<sub<2</sub<HgI<sub<4</sub<, Ag<sub<2</sub<HgI<sub<4</sub<, CuI, AgI, and HgI were calculated. For illustration, the following values of TVL apply at 1 MeV: S1: 6.062 cm, S2: 6.209 cm, S3: 6.929 cm, S4: 6.897 cm, and S5: 4.568 cm. Some important parameters, such as total atomic cross-sections (ACS), electronic cross-sections (ECS), the effective atomic numbers (Zeff), effective electron density (Neff), and effective conductivity (Ceff) of the samples were also calculated. Additionally, exposure buildup factors (EBF) and energy-absorption buildup factor (EABF) were estimated. These data on the radiation characteristics of our samples could be useful for gamma attenuation. The HgI sample has the highest FNRCS values (0.0892) relative to the other tested samples showing good neutron attenuation features. The CuI sample shows low gamma attenuation features; in contrast, it shows high neutron attenuation features.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Cu<sub<2</sub<HgI<sub<4</sub<</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ag<sub<2</sub<HgI<sub<4</sub<</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">semiconductor compounds</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">gamma-ray attenuation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">fast neutron removal cross-section</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">build-up factors</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Crystallography</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">El Sayed Yousef</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Mohammed S. Alqahtani</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Manuela Reben</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Hamed Algarni</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Ahmad Umar</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Hasan B. Albargi</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Ibrahim S. Yahia</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Nehal Sabry</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">Crystals</subfield><subfield code="d">MDPI AG, 2011</subfield><subfield code="g">12(2022), 2, p 276</subfield><subfield code="w">(DE-627)718303067</subfield><subfield code="w">(DE-600)2661516-2</subfield><subfield code="x">20734352</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:12</subfield><subfield code="g">year:2022</subfield><subfield code="g">number:2, p 276</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.3390/cryst12020276</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/977ee38c0d0a41bea1579dd0d70f8080</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://www.mdpi.com/2073-4352/12/2/276</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2073-4352</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">12</subfield><subfield code="j">2022</subfield><subfield code="e">2, p 276</subfield></datafield></record></collection>
callnumber-first	Q - Science
author	Heba Y. Zahran
spellingShingle	Heba Y. Zahran misc QD901-999 misc Cu<sub<2</sub<HgI<sub<4</sub< misc Ag<sub<2</sub<HgI<sub<4</sub< misc semiconductor compounds misc gamma-ray attenuation misc fast neutron removal cross-section misc build-up factors misc Crystallography Analysis of the Radiation Attenuation Parameters of Cu<sub<2</sub<HgI<sub<4</sub<, Ag<sub<2</sub<HgI<sub<4</sub<, and (Cu/Ag/Hg I) Semiconductor Compounds
authorStr	Heba Y. Zahran
ppnlink_with_tag_str_mv	@@773@@(DE-627)718303067
format	electronic Article
delete_txt_mv	keep
author_role	aut aut aut aut aut aut aut aut aut
collection	DOAJ
remote_str	true
callnumber-label	QD901-999
illustrated	Not Illustrated
issn	20734352
topic_title	QD901-999 Analysis of the Radiation Attenuation Parameters of Cu<sub<2</sub<HgI<sub<4</sub<, Ag<sub<2</sub<HgI<sub<4</sub<, and (Cu/Ag/Hg I) Semiconductor Compounds Cu<sub<2</sub<HgI<sub<4</sub< Ag<sub<2</sub<HgI<sub<4</sub< semiconductor compounds gamma-ray attenuation fast neutron removal cross-section build-up factors
topic	misc QD901-999 misc Cu<sub<2</sub<HgI<sub<4</sub< misc Ag<sub<2</sub<HgI<sub<4</sub< misc semiconductor compounds misc gamma-ray attenuation misc fast neutron removal cross-section misc build-up factors misc Crystallography
topic_unstemmed	misc QD901-999 misc Cu<sub<2</sub<HgI<sub<4</sub< misc Ag<sub<2</sub<HgI<sub<4</sub< misc semiconductor compounds misc gamma-ray attenuation misc fast neutron removal cross-section misc build-up factors misc Crystallography
topic_browse	misc QD901-999 misc Cu<sub<2</sub<HgI<sub<4</sub< misc Ag<sub<2</sub<HgI<sub<4</sub< misc semiconductor compounds misc gamma-ray attenuation misc fast neutron removal cross-section misc build-up factors misc Crystallography
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	cr
hierarchy_parent_title	Crystals
hierarchy_parent_id	718303067
hierarchy_top_title	Crystals
isfreeaccess_txt	true
familylinks_str_mv	(DE-627)718303067 (DE-600)2661516-2
title	Analysis of the Radiation Attenuation Parameters of Cu<sub<2</sub<HgI<sub<4</sub<, Ag<sub<2</sub<HgI<sub<4</sub<, and (Cu/Ag/Hg I) Semiconductor Compounds
ctrlnum	(DE-627)DOAJ031580564 (DE-599)DOAJ977ee38c0d0a41bea1579dd0d70f8080
title_full	Analysis of the Radiation Attenuation Parameters of Cu<sub<2</sub<HgI<sub<4</sub<, Ag<sub<2</sub<HgI<sub<4</sub<, and (Cu/Ag/Hg I) Semiconductor Compounds
author_sort	Heba Y. Zahran
journal	Crystals
journalStr	Crystals
callnumber-first-code	Q
lang_code	eng
isOA_bool	true
recordtype	marc
publishDateSort	2022
contenttype_str_mv	txt
author_browse	Heba Y. Zahran El Sayed Yousef Mohammed S. Alqahtani Manuela Reben Hamed Algarni Ahmad Umar Hasan B. Albargi Ibrahim S. Yahia Nehal Sabry
container_volume	12
class	QD901-999
format_se	Elektronische Aufsätze
author-letter	Heba Y. Zahran
doi_str_mv	10.3390/cryst12020276
author2-role	verfasserin
title_sort	analysis of the radiation attenuation parameters of cu<sub<2</sub<hgi<sub<4</sub<, ag<sub<2</sub<hgi<sub<4</sub<, and (cu/ag/hg i) semiconductor compounds
callnumber	QD901-999
title_auth	Analysis of the Radiation Attenuation Parameters of Cu<sub<2</sub<HgI<sub<4</sub<, Ag<sub<2</sub<HgI<sub<4</sub<, and (Cu/Ag/Hg I) Semiconductor Compounds
abstract	This analysis aims to determine photon attenuation for five different ternary and binary iodide compounds using Phy-X/PSD software. For a broad range of photon energies between 0.015 and 15 MeV, the mass attenuation coefficient (MAC), linear attenuation coefficient (LAC), half-value layer (HVL), tenth-value layer (TVL), and mean free path (MFP) for the samples of Cu<sub<2</sub<HgI<sub<4</sub<, Ag<sub<2</sub<HgI<sub<4</sub<, CuI, AgI, and HgI were calculated. For illustration, the following values of TVL apply at 1 MeV: S1: 6.062 cm, S2: 6.209 cm, S3: 6.929 cm, S4: 6.897 cm, and S5: 4.568 cm. Some important parameters, such as total atomic cross-sections (ACS), electronic cross-sections (ECS), the effective atomic numbers (Zeff), effective electron density (Neff), and effective conductivity (Ceff) of the samples were also calculated. Additionally, exposure buildup factors (EBF) and energy-absorption buildup factor (EABF) were estimated. These data on the radiation characteristics of our samples could be useful for gamma attenuation. The HgI sample has the highest FNRCS values (0.0892) relative to the other tested samples showing good neutron attenuation features. The CuI sample shows low gamma attenuation features; in contrast, it shows high neutron attenuation features.
abstractGer	This analysis aims to determine photon attenuation for five different ternary and binary iodide compounds using Phy-X/PSD software. For a broad range of photon energies between 0.015 and 15 MeV, the mass attenuation coefficient (MAC), linear attenuation coefficient (LAC), half-value layer (HVL), tenth-value layer (TVL), and mean free path (MFP) for the samples of Cu<sub<2</sub<HgI<sub<4</sub<, Ag<sub<2</sub<HgI<sub<4</sub<, CuI, AgI, and HgI were calculated. For illustration, the following values of TVL apply at 1 MeV: S1: 6.062 cm, S2: 6.209 cm, S3: 6.929 cm, S4: 6.897 cm, and S5: 4.568 cm. Some important parameters, such as total atomic cross-sections (ACS), electronic cross-sections (ECS), the effective atomic numbers (Zeff), effective electron density (Neff), and effective conductivity (Ceff) of the samples were also calculated. Additionally, exposure buildup factors (EBF) and energy-absorption buildup factor (EABF) were estimated. These data on the radiation characteristics of our samples could be useful for gamma attenuation. The HgI sample has the highest FNRCS values (0.0892) relative to the other tested samples showing good neutron attenuation features. The CuI sample shows low gamma attenuation features; in contrast, it shows high neutron attenuation features.
abstract_unstemmed	This analysis aims to determine photon attenuation for five different ternary and binary iodide compounds using Phy-X/PSD software. For a broad range of photon energies between 0.015 and 15 MeV, the mass attenuation coefficient (MAC), linear attenuation coefficient (LAC), half-value layer (HVL), tenth-value layer (TVL), and mean free path (MFP) for the samples of Cu<sub<2</sub<HgI<sub<4</sub<, Ag<sub<2</sub<HgI<sub<4</sub<, CuI, AgI, and HgI were calculated. For illustration, the following values of TVL apply at 1 MeV: S1: 6.062 cm, S2: 6.209 cm, S3: 6.929 cm, S4: 6.897 cm, and S5: 4.568 cm. Some important parameters, such as total atomic cross-sections (ACS), electronic cross-sections (ECS), the effective atomic numbers (Zeff), effective electron density (Neff), and effective conductivity (Ceff) of the samples were also calculated. Additionally, exposure buildup factors (EBF) and energy-absorption buildup factor (EABF) were estimated. These data on the radiation characteristics of our samples could be useful for gamma attenuation. The HgI sample has the highest FNRCS values (0.0892) relative to the other tested samples showing good neutron attenuation features. The CuI sample shows low gamma attenuation features; in contrast, it shows high neutron attenuation features.
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700
container_issue	2, p 276
title_short	Analysis of the Radiation Attenuation Parameters of Cu<sub<2</sub<HgI<sub<4</sub<, Ag<sub<2</sub<HgI<sub<4</sub<, and (Cu/Ag/Hg I) Semiconductor Compounds
url	https://doi.org/10.3390/cryst12020276 https://doaj.org/article/977ee38c0d0a41bea1579dd0d70f8080 https://www.mdpi.com/2073-4352/12/2/276 https://doaj.org/toc/2073-4352
remote_bool	true
author2	El Sayed Yousef Mohammed S. Alqahtani Manuela Reben Hamed Algarni Ahmad Umar Hasan B. Albargi Ibrahim S. Yahia Nehal Sabry
author2Str	El Sayed Yousef Mohammed S. Alqahtani Manuela Reben Hamed Algarni Ahmad Umar Hasan B. Albargi Ibrahim S. Yahia Nehal Sabry
ppnlink	718303067
callnumber-subject	QD - Chemistry
mediatype_str_mv	c
isOA_txt	true
hochschulschrift_bool	false
doi_str	10.3390/cryst12020276
callnumber-a	QD901-999
up_date	2024-07-03T21:22:22.586Z
_version_	1803594490277003264
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ031580564</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20240414190624.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230226s2022 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.3390/cryst12020276</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ031580564</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJ977ee38c0d0a41bea1579dd0d70f8080</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QD901-999</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Heba Y. Zahran</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Analysis of the Radiation Attenuation Parameters of Cu<sub<2</sub<HgI<sub<4</sub<, Ag<sub<2</sub<HgI<sub<4</sub<, and (Cu/Ag/Hg I) Semiconductor Compounds</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2022</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">This analysis aims to determine photon attenuation for five different ternary and binary iodide compounds using Phy-X/PSD software. For a broad range of photon energies between 0.015 and 15 MeV, the mass attenuation coefficient (MAC), linear attenuation coefficient (LAC), half-value layer (HVL), tenth-value layer (TVL), and mean free path (MFP) for the samples of Cu<sub<2</sub<HgI<sub<4</sub<, Ag<sub<2</sub<HgI<sub<4</sub<, CuI, AgI, and HgI were calculated. For illustration, the following values of TVL apply at 1 MeV: S1: 6.062 cm, S2: 6.209 cm, S3: 6.929 cm, S4: 6.897 cm, and S5: 4.568 cm. Some important parameters, such as total atomic cross-sections (ACS), electronic cross-sections (ECS), the effective atomic numbers (Zeff), effective electron density (Neff), and effective conductivity (Ceff) of the samples were also calculated. Additionally, exposure buildup factors (EBF) and energy-absorption buildup factor (EABF) were estimated. These data on the radiation characteristics of our samples could be useful for gamma attenuation. The HgI sample has the highest FNRCS values (0.0892) relative to the other tested samples showing good neutron attenuation features. The CuI sample shows low gamma attenuation features; in contrast, it shows high neutron attenuation features.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Cu<sub<2</sub<HgI<sub<4</sub<</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ag<sub<2</sub<HgI<sub<4</sub<</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">semiconductor compounds</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">gamma-ray attenuation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">fast neutron removal cross-section</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">build-up factors</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Crystallography</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">El Sayed Yousef</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Mohammed S. Alqahtani</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Manuela Reben</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Hamed Algarni</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Ahmad Umar</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Hasan B. Albargi</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Ibrahim S. Yahia</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Nehal Sabry</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">Crystals</subfield><subfield code="d">MDPI AG, 2011</subfield><subfield code="g">12(2022), 2, p 276</subfield><subfield code="w">(DE-627)718303067</subfield><subfield code="w">(DE-600)2661516-2</subfield><subfield code="x">20734352</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:12</subfield><subfield code="g">year:2022</subfield><subfield code="g">number:2, p 276</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.3390/cryst12020276</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/977ee38c0d0a41bea1579dd0d70f8080</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://www.mdpi.com/2073-4352/12/2/276</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2073-4352</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">12</subfield><subfield code="j">2022</subfield><subfield code="e">2, p 276</subfield></datafield></record></collection>
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Analysis of the Radiation Attenuation Parameters of Cu<sub<2</sub<HgI<sub<4</sub<, Ag<sub<2</sub<HgI<sub<4</sub<, and (Cu/Ag/Hg I) Semiconductor Compounds

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