Redox-controlled memristive switching in the junctions employing Ti reactive electrodes

We have proposed a kind of memristive device based on the junctions employing Ti as the reactive electrodes. The role of electrically-derived redox of Ti in such memristive switching is shown. The structural and chemical evidence of the electrically-derived oxidation is presented by TEM and XPS expe...
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Autor*in:	Haitao Li [verfasserIn] Yidong Xia [verfasserIn] Hanni Xu [verfasserIn] Lifei Liu [verfasserIn] Xuefei Li [verfasserIn] Zhenjie Tang [verfasserIn] Xiangzhong Chen [verfasserIn] Aidong Li [verfasserIn] Jiang Yin [verfasserIn] Zhiguo Liu [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2011

Übergeordnetes Werk:	In: AIP Advances - AIP Publishing LLC, 2011, 1(2011), 3, Seite 032141-032141-6
Übergeordnetes Werk:	volume:1 ; year:2011 ; number:3 ; pages:032141-032141-6

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.1063/1.3630128

Katalog-ID:	DOAJ033556377

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520			\|a We have proposed a kind of memristive device based on the junctions employing Ti as the reactive electrodes. The role of electrically-derived redox of Ti in such memristive switching is shown. The structural and chemical evidence of the electrically-derived oxidation is presented by TEM and XPS experiment, respectively. Due to the redox of the top electrode Ti and the consequent drift of oxygen vacancies, the device shows two distinct resistance states under a sweeping voltage loading. ON state is controlled by tunneling process, while OFF state is controlled by Schottky emission conductive mechanism. The failure behaviors of such memristive junctions are also discussed. In the light of the redox principle, we demonstrate that the devices could be recovered by loading a long electrical reduction treatment.
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allfields	10.1063/1.3630128 doi (DE-627)DOAJ033556377 (DE-599)DOAJca09bd9452c54e46a5aeb28712d9c97c DE-627 ger DE-627 rakwb eng QC1-999 Haitao Li verfasserin aut Redox-controlled memristive switching in the junctions employing Ti reactive electrodes 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We have proposed a kind of memristive device based on the junctions employing Ti as the reactive electrodes. The role of electrically-derived redox of Ti in such memristive switching is shown. The structural and chemical evidence of the electrically-derived oxidation is presented by TEM and XPS experiment, respectively. Due to the redox of the top electrode Ti and the consequent drift of oxygen vacancies, the device shows two distinct resistance states under a sweeping voltage loading. ON state is controlled by tunneling process, while OFF state is controlled by Schottky emission conductive mechanism. The failure behaviors of such memristive junctions are also discussed. In the light of the redox principle, we demonstrate that the devices could be recovered by loading a long electrical reduction treatment. Physics Yidong Xia verfasserin aut Hanni Xu verfasserin aut Lifei Liu verfasserin aut Xuefei Li verfasserin aut Zhenjie Tang verfasserin aut Xiangzhong Chen verfasserin aut Aidong Li verfasserin aut Jiang Yin verfasserin aut Zhiguo Liu verfasserin aut In AIP Advances AIP Publishing LLC, 2011 1(2011), 3, Seite 032141-032141-6 (DE-627)641391706 (DE-600)2583909-3 21583226 nnns volume:1 year:2011 number:3 pages:032141-032141-6 https://doi.org/10.1063/1.3630128 kostenfrei https://doaj.org/article/ca09bd9452c54e46a5aeb28712d9c97c kostenfrei http://dx.doi.org/10.1063/1.3630128 kostenfrei https://doaj.org/toc/2158-3226 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 1 2011 3 032141-032141-6
spelling	10.1063/1.3630128 doi (DE-627)DOAJ033556377 (DE-599)DOAJca09bd9452c54e46a5aeb28712d9c97c DE-627 ger DE-627 rakwb eng QC1-999 Haitao Li verfasserin aut Redox-controlled memristive switching in the junctions employing Ti reactive electrodes 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We have proposed a kind of memristive device based on the junctions employing Ti as the reactive electrodes. The role of electrically-derived redox of Ti in such memristive switching is shown. The structural and chemical evidence of the electrically-derived oxidation is presented by TEM and XPS experiment, respectively. Due to the redox of the top electrode Ti and the consequent drift of oxygen vacancies, the device shows two distinct resistance states under a sweeping voltage loading. ON state is controlled by tunneling process, while OFF state is controlled by Schottky emission conductive mechanism. The failure behaviors of such memristive junctions are also discussed. In the light of the redox principle, we demonstrate that the devices could be recovered by loading a long electrical reduction treatment. Physics Yidong Xia verfasserin aut Hanni Xu verfasserin aut Lifei Liu verfasserin aut Xuefei Li verfasserin aut Zhenjie Tang verfasserin aut Xiangzhong Chen verfasserin aut Aidong Li verfasserin aut Jiang Yin verfasserin aut Zhiguo Liu verfasserin aut In AIP Advances AIP Publishing LLC, 2011 1(2011), 3, Seite 032141-032141-6 (DE-627)641391706 (DE-600)2583909-3 21583226 nnns volume:1 year:2011 number:3 pages:032141-032141-6 https://doi.org/10.1063/1.3630128 kostenfrei https://doaj.org/article/ca09bd9452c54e46a5aeb28712d9c97c kostenfrei http://dx.doi.org/10.1063/1.3630128 kostenfrei https://doaj.org/toc/2158-3226 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 1 2011 3 032141-032141-6
allfields_unstemmed	10.1063/1.3630128 doi (DE-627)DOAJ033556377 (DE-599)DOAJca09bd9452c54e46a5aeb28712d9c97c DE-627 ger DE-627 rakwb eng QC1-999 Haitao Li verfasserin aut Redox-controlled memristive switching in the junctions employing Ti reactive electrodes 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We have proposed a kind of memristive device based on the junctions employing Ti as the reactive electrodes. The role of electrically-derived redox of Ti in such memristive switching is shown. The structural and chemical evidence of the electrically-derived oxidation is presented by TEM and XPS experiment, respectively. Due to the redox of the top electrode Ti and the consequent drift of oxygen vacancies, the device shows two distinct resistance states under a sweeping voltage loading. ON state is controlled by tunneling process, while OFF state is controlled by Schottky emission conductive mechanism. The failure behaviors of such memristive junctions are also discussed. In the light of the redox principle, we demonstrate that the devices could be recovered by loading a long electrical reduction treatment. Physics Yidong Xia verfasserin aut Hanni Xu verfasserin aut Lifei Liu verfasserin aut Xuefei Li verfasserin aut Zhenjie Tang verfasserin aut Xiangzhong Chen verfasserin aut Aidong Li verfasserin aut Jiang Yin verfasserin aut Zhiguo Liu verfasserin aut In AIP Advances AIP Publishing LLC, 2011 1(2011), 3, Seite 032141-032141-6 (DE-627)641391706 (DE-600)2583909-3 21583226 nnns volume:1 year:2011 number:3 pages:032141-032141-6 https://doi.org/10.1063/1.3630128 kostenfrei https://doaj.org/article/ca09bd9452c54e46a5aeb28712d9c97c kostenfrei http://dx.doi.org/10.1063/1.3630128 kostenfrei https://doaj.org/toc/2158-3226 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 1 2011 3 032141-032141-6
allfieldsGer	10.1063/1.3630128 doi (DE-627)DOAJ033556377 (DE-599)DOAJca09bd9452c54e46a5aeb28712d9c97c DE-627 ger DE-627 rakwb eng QC1-999 Haitao Li verfasserin aut Redox-controlled memristive switching in the junctions employing Ti reactive electrodes 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We have proposed a kind of memristive device based on the junctions employing Ti as the reactive electrodes. The role of electrically-derived redox of Ti in such memristive switching is shown. The structural and chemical evidence of the electrically-derived oxidation is presented by TEM and XPS experiment, respectively. Due to the redox of the top electrode Ti and the consequent drift of oxygen vacancies, the device shows two distinct resistance states under a sweeping voltage loading. ON state is controlled by tunneling process, while OFF state is controlled by Schottky emission conductive mechanism. The failure behaviors of such memristive junctions are also discussed. In the light of the redox principle, we demonstrate that the devices could be recovered by loading a long electrical reduction treatment. Physics Yidong Xia verfasserin aut Hanni Xu verfasserin aut Lifei Liu verfasserin aut Xuefei Li verfasserin aut Zhenjie Tang verfasserin aut Xiangzhong Chen verfasserin aut Aidong Li verfasserin aut Jiang Yin verfasserin aut Zhiguo Liu verfasserin aut In AIP Advances AIP Publishing LLC, 2011 1(2011), 3, Seite 032141-032141-6 (DE-627)641391706 (DE-600)2583909-3 21583226 nnns volume:1 year:2011 number:3 pages:032141-032141-6 https://doi.org/10.1063/1.3630128 kostenfrei https://doaj.org/article/ca09bd9452c54e46a5aeb28712d9c97c kostenfrei http://dx.doi.org/10.1063/1.3630128 kostenfrei https://doaj.org/toc/2158-3226 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 1 2011 3 032141-032141-6
allfieldsSound	10.1063/1.3630128 doi (DE-627)DOAJ033556377 (DE-599)DOAJca09bd9452c54e46a5aeb28712d9c97c DE-627 ger DE-627 rakwb eng QC1-999 Haitao Li verfasserin aut Redox-controlled memristive switching in the junctions employing Ti reactive electrodes 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We have proposed a kind of memristive device based on the junctions employing Ti as the reactive electrodes. The role of electrically-derived redox of Ti in such memristive switching is shown. The structural and chemical evidence of the electrically-derived oxidation is presented by TEM and XPS experiment, respectively. Due to the redox of the top electrode Ti and the consequent drift of oxygen vacancies, the device shows two distinct resistance states under a sweeping voltage loading. ON state is controlled by tunneling process, while OFF state is controlled by Schottky emission conductive mechanism. The failure behaviors of such memristive junctions are also discussed. In the light of the redox principle, we demonstrate that the devices could be recovered by loading a long electrical reduction treatment. Physics Yidong Xia verfasserin aut Hanni Xu verfasserin aut Lifei Liu verfasserin aut Xuefei Li verfasserin aut Zhenjie Tang verfasserin aut Xiangzhong Chen verfasserin aut Aidong Li verfasserin aut Jiang Yin verfasserin aut Zhiguo Liu verfasserin aut In AIP Advances AIP Publishing LLC, 2011 1(2011), 3, Seite 032141-032141-6 (DE-627)641391706 (DE-600)2583909-3 21583226 nnns volume:1 year:2011 number:3 pages:032141-032141-6 https://doi.org/10.1063/1.3630128 kostenfrei https://doaj.org/article/ca09bd9452c54e46a5aeb28712d9c97c kostenfrei http://dx.doi.org/10.1063/1.3630128 kostenfrei https://doaj.org/toc/2158-3226 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 1 2011 3 032141-032141-6
language	English
source	In AIP Advances 1(2011), 3, Seite 032141-032141-6 volume:1 year:2011 number:3 pages:032141-032141-6
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authorswithroles_txt_mv	Haitao Li @@aut@@ Yidong Xia @@aut@@ Hanni Xu @@aut@@ Lifei Liu @@aut@@ Xuefei Li @@aut@@ Zhenjie Tang @@aut@@ Xiangzhong Chen @@aut@@ Aidong Li @@aut@@ Jiang Yin @@aut@@ Zhiguo Liu @@aut@@
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callnumber-first	Q - Science
author	Haitao Li
spellingShingle	Haitao Li misc QC1-999 misc Physics Redox-controlled memristive switching in the junctions employing Ti reactive electrodes
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topic_title	QC1-999 Redox-controlled memristive switching in the junctions employing Ti reactive electrodes
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title	Redox-controlled memristive switching in the junctions employing Ti reactive electrodes
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title_full	Redox-controlled memristive switching in the junctions employing Ti reactive electrodes
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title_sort	redox-controlled memristive switching in the junctions employing ti reactive electrodes
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title_auth	Redox-controlled memristive switching in the junctions employing Ti reactive electrodes
abstract	We have proposed a kind of memristive device based on the junctions employing Ti as the reactive electrodes. The role of electrically-derived redox of Ti in such memristive switching is shown. The structural and chemical evidence of the electrically-derived oxidation is presented by TEM and XPS experiment, respectively. Due to the redox of the top electrode Ti and the consequent drift of oxygen vacancies, the device shows two distinct resistance states under a sweeping voltage loading. ON state is controlled by tunneling process, while OFF state is controlled by Schottky emission conductive mechanism. The failure behaviors of such memristive junctions are also discussed. In the light of the redox principle, we demonstrate that the devices could be recovered by loading a long electrical reduction treatment.
abstractGer	We have proposed a kind of memristive device based on the junctions employing Ti as the reactive electrodes. The role of electrically-derived redox of Ti in such memristive switching is shown. The structural and chemical evidence of the electrically-derived oxidation is presented by TEM and XPS experiment, respectively. Due to the redox of the top electrode Ti and the consequent drift of oxygen vacancies, the device shows two distinct resistance states under a sweeping voltage loading. ON state is controlled by tunneling process, while OFF state is controlled by Schottky emission conductive mechanism. The failure behaviors of such memristive junctions are also discussed. In the light of the redox principle, we demonstrate that the devices could be recovered by loading a long electrical reduction treatment.
abstract_unstemmed	We have proposed a kind of memristive device based on the junctions employing Ti as the reactive electrodes. The role of electrically-derived redox of Ti in such memristive switching is shown. The structural and chemical evidence of the electrically-derived oxidation is presented by TEM and XPS experiment, respectively. Due to the redox of the top electrode Ti and the consequent drift of oxygen vacancies, the device shows two distinct resistance states under a sweeping voltage loading. ON state is controlled by tunneling process, while OFF state is controlled by Schottky emission conductive mechanism. The failure behaviors of such memristive junctions are also discussed. In the light of the redox principle, we demonstrate that the devices could be recovered by loading a long electrical reduction treatment.
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title_short	Redox-controlled memristive switching in the junctions employing Ti reactive electrodes
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Redox-controlled memristive switching in the junctions employing Ti reactive electrodes

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