A 190.3‐dBc/Hz FoM 16‐GHz rotary travelling‐wave oscillator with reliable direction control

Abstract This letter presents a rotary travelling‐wave oscillator (RTWO) with reliable direction control in a standard 130 nm complementary metal–oxide–semiconductor (CMOS) technology. To achieve low phase noise (PN), and low power consumption, 16‐stages customised transmission line segments are des...
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Autor*in:	Fangzhou Sun [verfasserIn] Yushi Zhou [verfasserIn] Zhanjun Bai [verfasserIn] Yong Chen [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2021

Schlagwörter:	Analogue circuit design, modelling and testing Oscillators Microwave integrated circuits Travelling wave tubes Semiconductor integrated circuit design, layout, modelling and testing CMOS integrated circuits

Übergeordnetes Werk:	In: Electronics Letters - Wiley, 2021, 57(2021), 5, Seite 209-211
Übergeordnetes Werk:	volume:57 ; year:2021 ; number:5 ; pages:209-211

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc Journal toc

DOI / URN:	10.1049/ell2.12089

Katalog-ID:	DOAJ033817014

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520			\|a Abstract This letter presents a rotary travelling‐wave oscillator (RTWO) with reliable direction control in a standard 130 nm complementary metal–oxide–semiconductor (CMOS) technology. To achieve low phase noise (PN), and low power consumption, 16‐stages customised transmission line segments are designed and simulated on electromagnetic tools. The PN is investigated through modelling the RTWO as multiple standing‐wave oscillators. The proposed oscillator achieves 11.2% tuning range, 190.3 dBc/Hz figure‐of‐merit (FoM) at 1 MHz offset and 192.3 dBc/Hz FoM at 10 MHz offset with 5.8‐mW power consumption from 16‐GHz carrier.
650		4	\|a Analogue circuit design, modelling and testing
650		4	\|a Oscillators
650		4	\|a Microwave integrated circuits
650		4	\|a Travelling wave tubes
650		4	\|a Semiconductor integrated circuit design, layout, modelling and testing
650		4	\|a CMOS integrated circuits
653		0	\|a Electrical engineering. Electronics. Nuclear engineering
700	0		\|a Yushi Zhou \|e verfasserin \|4 aut
700	0		\|a Zhanjun Bai \|e verfasserin \|4 aut
700	0		\|a Yong Chen \|e verfasserin \|4 aut
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912			\|a GBV_ILN_4336
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912			\|a GBV_ILN_4367
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951			\|a AR
952			\|d 57 \|j 2021 \|e 5 \|h 209-211

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allfields	10.1049/ell2.12089 doi (DE-627)DOAJ033817014 (DE-599)DOAJ3996556a9eda495e88b434442b8861e2 DE-627 ger DE-627 rakwb eng TK1-9971 Fangzhou Sun verfasserin aut A 190.3‐dBc/Hz FoM 16‐GHz rotary travelling‐wave oscillator with reliable direction control 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This letter presents a rotary travelling‐wave oscillator (RTWO) with reliable direction control in a standard 130 nm complementary metal–oxide–semiconductor (CMOS) technology. To achieve low phase noise (PN), and low power consumption, 16‐stages customised transmission line segments are designed and simulated on electromagnetic tools. The PN is investigated through modelling the RTWO as multiple standing‐wave oscillators. The proposed oscillator achieves 11.2% tuning range, 190.3 dBc/Hz figure‐of‐merit (FoM) at 1 MHz offset and 192.3 dBc/Hz FoM at 10 MHz offset with 5.8‐mW power consumption from 16‐GHz carrier. Analogue circuit design, modelling and testing Oscillators Microwave integrated circuits Travelling wave tubes Semiconductor integrated circuit design, layout, modelling and testing CMOS integrated circuits Electrical engineering. Electronics. Nuclear engineering Yushi Zhou verfasserin aut Zhanjun Bai verfasserin aut Yong Chen verfasserin aut In Electronics Letters Wiley, 2021 57(2021), 5, Seite 209-211 (DE-627)325616094 (DE-600)2038620-5 1350911X nnns volume:57 year:2021 number:5 pages:209-211 https://doi.org/10.1049/ell2.12089 kostenfrei https://doaj.org/article/3996556a9eda495e88b434442b8861e2 kostenfrei https://doi.org/10.1049/ell2.12089 kostenfrei https://doaj.org/toc/0013-5194 Journal toc kostenfrei https://doaj.org/toc/1350-911X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2026 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 57 2021 5 209-211
spelling	10.1049/ell2.12089 doi (DE-627)DOAJ033817014 (DE-599)DOAJ3996556a9eda495e88b434442b8861e2 DE-627 ger DE-627 rakwb eng TK1-9971 Fangzhou Sun verfasserin aut A 190.3‐dBc/Hz FoM 16‐GHz rotary travelling‐wave oscillator with reliable direction control 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This letter presents a rotary travelling‐wave oscillator (RTWO) with reliable direction control in a standard 130 nm complementary metal–oxide–semiconductor (CMOS) technology. To achieve low phase noise (PN), and low power consumption, 16‐stages customised transmission line segments are designed and simulated on electromagnetic tools. The PN is investigated through modelling the RTWO as multiple standing‐wave oscillators. The proposed oscillator achieves 11.2% tuning range, 190.3 dBc/Hz figure‐of‐merit (FoM) at 1 MHz offset and 192.3 dBc/Hz FoM at 10 MHz offset with 5.8‐mW power consumption from 16‐GHz carrier. Analogue circuit design, modelling and testing Oscillators Microwave integrated circuits Travelling wave tubes Semiconductor integrated circuit design, layout, modelling and testing CMOS integrated circuits Electrical engineering. Electronics. Nuclear engineering Yushi Zhou verfasserin aut Zhanjun Bai verfasserin aut Yong Chen verfasserin aut In Electronics Letters Wiley, 2021 57(2021), 5, Seite 209-211 (DE-627)325616094 (DE-600)2038620-5 1350911X nnns volume:57 year:2021 number:5 pages:209-211 https://doi.org/10.1049/ell2.12089 kostenfrei https://doaj.org/article/3996556a9eda495e88b434442b8861e2 kostenfrei https://doi.org/10.1049/ell2.12089 kostenfrei https://doaj.org/toc/0013-5194 Journal toc kostenfrei https://doaj.org/toc/1350-911X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2026 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 57 2021 5 209-211
allfields_unstemmed	10.1049/ell2.12089 doi (DE-627)DOAJ033817014 (DE-599)DOAJ3996556a9eda495e88b434442b8861e2 DE-627 ger DE-627 rakwb eng TK1-9971 Fangzhou Sun verfasserin aut A 190.3‐dBc/Hz FoM 16‐GHz rotary travelling‐wave oscillator with reliable direction control 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This letter presents a rotary travelling‐wave oscillator (RTWO) with reliable direction control in a standard 130 nm complementary metal–oxide–semiconductor (CMOS) technology. To achieve low phase noise (PN), and low power consumption, 16‐stages customised transmission line segments are designed and simulated on electromagnetic tools. The PN is investigated through modelling the RTWO as multiple standing‐wave oscillators. The proposed oscillator achieves 11.2% tuning range, 190.3 dBc/Hz figure‐of‐merit (FoM) at 1 MHz offset and 192.3 dBc/Hz FoM at 10 MHz offset with 5.8‐mW power consumption from 16‐GHz carrier. Analogue circuit design, modelling and testing Oscillators Microwave integrated circuits Travelling wave tubes Semiconductor integrated circuit design, layout, modelling and testing CMOS integrated circuits Electrical engineering. Electronics. Nuclear engineering Yushi Zhou verfasserin aut Zhanjun Bai verfasserin aut Yong Chen verfasserin aut In Electronics Letters Wiley, 2021 57(2021), 5, Seite 209-211 (DE-627)325616094 (DE-600)2038620-5 1350911X nnns volume:57 year:2021 number:5 pages:209-211 https://doi.org/10.1049/ell2.12089 kostenfrei https://doaj.org/article/3996556a9eda495e88b434442b8861e2 kostenfrei https://doi.org/10.1049/ell2.12089 kostenfrei https://doaj.org/toc/0013-5194 Journal toc kostenfrei https://doaj.org/toc/1350-911X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2026 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 57 2021 5 209-211
allfieldsGer	10.1049/ell2.12089 doi (DE-627)DOAJ033817014 (DE-599)DOAJ3996556a9eda495e88b434442b8861e2 DE-627 ger DE-627 rakwb eng TK1-9971 Fangzhou Sun verfasserin aut A 190.3‐dBc/Hz FoM 16‐GHz rotary travelling‐wave oscillator with reliable direction control 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This letter presents a rotary travelling‐wave oscillator (RTWO) with reliable direction control in a standard 130 nm complementary metal–oxide–semiconductor (CMOS) technology. To achieve low phase noise (PN), and low power consumption, 16‐stages customised transmission line segments are designed and simulated on electromagnetic tools. The PN is investigated through modelling the RTWO as multiple standing‐wave oscillators. The proposed oscillator achieves 11.2% tuning range, 190.3 dBc/Hz figure‐of‐merit (FoM) at 1 MHz offset and 192.3 dBc/Hz FoM at 10 MHz offset with 5.8‐mW power consumption from 16‐GHz carrier. Analogue circuit design, modelling and testing Oscillators Microwave integrated circuits Travelling wave tubes Semiconductor integrated circuit design, layout, modelling and testing CMOS integrated circuits Electrical engineering. Electronics. Nuclear engineering Yushi Zhou verfasserin aut Zhanjun Bai verfasserin aut Yong Chen verfasserin aut In Electronics Letters Wiley, 2021 57(2021), 5, Seite 209-211 (DE-627)325616094 (DE-600)2038620-5 1350911X nnns volume:57 year:2021 number:5 pages:209-211 https://doi.org/10.1049/ell2.12089 kostenfrei https://doaj.org/article/3996556a9eda495e88b434442b8861e2 kostenfrei https://doi.org/10.1049/ell2.12089 kostenfrei https://doaj.org/toc/0013-5194 Journal toc kostenfrei https://doaj.org/toc/1350-911X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2026 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 57 2021 5 209-211
allfieldsSound	10.1049/ell2.12089 doi (DE-627)DOAJ033817014 (DE-599)DOAJ3996556a9eda495e88b434442b8861e2 DE-627 ger DE-627 rakwb eng TK1-9971 Fangzhou Sun verfasserin aut A 190.3‐dBc/Hz FoM 16‐GHz rotary travelling‐wave oscillator with reliable direction control 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This letter presents a rotary travelling‐wave oscillator (RTWO) with reliable direction control in a standard 130 nm complementary metal–oxide–semiconductor (CMOS) technology. To achieve low phase noise (PN), and low power consumption, 16‐stages customised transmission line segments are designed and simulated on electromagnetic tools. The PN is investigated through modelling the RTWO as multiple standing‐wave oscillators. The proposed oscillator achieves 11.2% tuning range, 190.3 dBc/Hz figure‐of‐merit (FoM) at 1 MHz offset and 192.3 dBc/Hz FoM at 10 MHz offset with 5.8‐mW power consumption from 16‐GHz carrier. Analogue circuit design, modelling and testing Oscillators Microwave integrated circuits Travelling wave tubes Semiconductor integrated circuit design, layout, modelling and testing CMOS integrated circuits Electrical engineering. Electronics. Nuclear engineering Yushi Zhou verfasserin aut Zhanjun Bai verfasserin aut Yong Chen verfasserin aut In Electronics Letters Wiley, 2021 57(2021), 5, Seite 209-211 (DE-627)325616094 (DE-600)2038620-5 1350911X nnns volume:57 year:2021 number:5 pages:209-211 https://doi.org/10.1049/ell2.12089 kostenfrei https://doaj.org/article/3996556a9eda495e88b434442b8861e2 kostenfrei https://doi.org/10.1049/ell2.12089 kostenfrei https://doaj.org/toc/0013-5194 Journal toc kostenfrei https://doaj.org/toc/1350-911X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2026 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 57 2021 5 209-211
language	English
source	In Electronics Letters 57(2021), 5, Seite 209-211 volume:57 year:2021 number:5 pages:209-211
sourceStr	In Electronics Letters 57(2021), 5, Seite 209-211 volume:57 year:2021 number:5 pages:209-211
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Analogue circuit design, modelling and testing Oscillators Microwave integrated circuits Travelling wave tubes Semiconductor integrated circuit design, layout, modelling and testing CMOS integrated circuits Electrical engineering. Electronics. Nuclear engineering
isfreeaccess_bool	true
container_title	Electronics Letters
authorswithroles_txt_mv	Fangzhou Sun @@aut@@ Yushi Zhou @@aut@@ Zhanjun Bai @@aut@@ Yong Chen @@aut@@
publishDateDaySort_date	2021-01-01T00:00:00Z
hierarchy_top_id	325616094
id	DOAJ033817014
language_de	englisch
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callnumber-first	T - Technology
author	Fangzhou Sun
spellingShingle	Fangzhou Sun misc TK1-9971 misc Analogue circuit design, modelling and testing misc Oscillators misc Microwave integrated circuits misc Travelling wave tubes misc Semiconductor integrated circuit design, layout, modelling and testing misc CMOS integrated circuits misc Electrical engineering. Electronics. Nuclear engineering A 190.3‐dBc/Hz FoM 16‐GHz rotary travelling‐wave oscillator with reliable direction control
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topic_title	TK1-9971 A 190.3‐dBc/Hz FoM 16‐GHz rotary travelling‐wave oscillator with reliable direction control Analogue circuit design, modelling and testing Oscillators Microwave integrated circuits Travelling wave tubes Semiconductor integrated circuit design, layout, modelling and testing CMOS integrated circuits
topic	misc TK1-9971 misc Analogue circuit design, modelling and testing misc Oscillators misc Microwave integrated circuits misc Travelling wave tubes misc Semiconductor integrated circuit design, layout, modelling and testing misc CMOS integrated circuits misc Electrical engineering. Electronics. Nuclear engineering
topic_unstemmed	misc TK1-9971 misc Analogue circuit design, modelling and testing misc Oscillators misc Microwave integrated circuits misc Travelling wave tubes misc Semiconductor integrated circuit design, layout, modelling and testing misc CMOS integrated circuits misc Electrical engineering. Electronics. Nuclear engineering
topic_browse	misc TK1-9971 misc Analogue circuit design, modelling and testing misc Oscillators misc Microwave integrated circuits misc Travelling wave tubes misc Semiconductor integrated circuit design, layout, modelling and testing misc CMOS integrated circuits misc Electrical engineering. Electronics. Nuclear engineering
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title	A 190.3‐dBc/Hz FoM 16‐GHz rotary travelling‐wave oscillator with reliable direction control
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title_full	A 190.3‐dBc/Hz FoM 16‐GHz rotary travelling‐wave oscillator with reliable direction control
author_sort	Fangzhou Sun
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author_browse	Fangzhou Sun Yushi Zhou Zhanjun Bai Yong Chen
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author-letter	Fangzhou Sun
doi_str_mv	10.1049/ell2.12089
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title_sort	190.3‐dbc/hz fom 16‐ghz rotary travelling‐wave oscillator with reliable direction control
callnumber	TK1-9971
title_auth	A 190.3‐dBc/Hz FoM 16‐GHz rotary travelling‐wave oscillator with reliable direction control
abstract	Abstract This letter presents a rotary travelling‐wave oscillator (RTWO) with reliable direction control in a standard 130 nm complementary metal–oxide–semiconductor (CMOS) technology. To achieve low phase noise (PN), and low power consumption, 16‐stages customised transmission line segments are designed and simulated on electromagnetic tools. The PN is investigated through modelling the RTWO as multiple standing‐wave oscillators. The proposed oscillator achieves 11.2% tuning range, 190.3 dBc/Hz figure‐of‐merit (FoM) at 1 MHz offset and 192.3 dBc/Hz FoM at 10 MHz offset with 5.8‐mW power consumption from 16‐GHz carrier.
abstractGer	Abstract This letter presents a rotary travelling‐wave oscillator (RTWO) with reliable direction control in a standard 130 nm complementary metal–oxide–semiconductor (CMOS) technology. To achieve low phase noise (PN), and low power consumption, 16‐stages customised transmission line segments are designed and simulated on electromagnetic tools. The PN is investigated through modelling the RTWO as multiple standing‐wave oscillators. The proposed oscillator achieves 11.2% tuning range, 190.3 dBc/Hz figure‐of‐merit (FoM) at 1 MHz offset and 192.3 dBc/Hz FoM at 10 MHz offset with 5.8‐mW power consumption from 16‐GHz carrier.
abstract_unstemmed	Abstract This letter presents a rotary travelling‐wave oscillator (RTWO) with reliable direction control in a standard 130 nm complementary metal–oxide–semiconductor (CMOS) technology. To achieve low phase noise (PN), and low power consumption, 16‐stages customised transmission line segments are designed and simulated on electromagnetic tools. The PN is investigated through modelling the RTWO as multiple standing‐wave oscillators. The proposed oscillator achieves 11.2% tuning range, 190.3 dBc/Hz figure‐of‐merit (FoM) at 1 MHz offset and 192.3 dBc/Hz FoM at 10 MHz offset with 5.8‐mW power consumption from 16‐GHz carrier.
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title_short	A 190.3‐dBc/Hz FoM 16‐GHz rotary travelling‐wave oscillator with reliable direction control
url	https://doi.org/10.1049/ell2.12089 https://doaj.org/article/3996556a9eda495e88b434442b8861e2 https://doaj.org/toc/0013-5194 https://doaj.org/toc/1350-911X
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up_date	2024-07-03T19:48:46.787Z
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A 190.3‐dBc/Hz FoM 16‐GHz rotary travelling‐wave oscillator with reliable direction control

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