The segmented non-uniform dielectric module design for uniformity control of plasma profile in a capacitively coupled plasma chamber

Low-temperature plasma technique is one of the critical techniques in IC manufacturing process, such as etching and thin-film deposition, and the uniformity greatly impacts the process quality, so the design for the plasma uniformity control is very important but difficult. It is hard to finely and...
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Autor*in:	Huanxiong Xia [verfasserIn] Dong Xiang [verfasserIn] Wang Yang [verfasserIn] Peng Mou [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2014

Übergeordnetes Werk:	In: AIP Advances - AIP Publishing LLC, 2011, 4(2014), 12, Seite 127124-127124-15
Übergeordnetes Werk:	volume:4 ; year:2014 ; number:12 ; pages:127124-127124-15

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.1063/1.4904216

Katalog-ID:	DOAJ034470190

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spelling	10.1063/1.4904216 doi (DE-627)DOAJ034470190 (DE-599)DOAJ7fac9a635bb245208459c27a9fc3faae DE-627 ger DE-627 rakwb eng QC1-999 Huanxiong Xia verfasserin aut The segmented non-uniform dielectric module design for uniformity control of plasma profile in a capacitively coupled plasma chamber 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Low-temperature plasma technique is one of the critical techniques in IC manufacturing process, such as etching and thin-film deposition, and the uniformity greatly impacts the process quality, so the design for the plasma uniformity control is very important but difficult. It is hard to finely and flexibly regulate the spatial distribution of the plasma in the chamber via controlling the discharge parameters or modifying the structure in zero-dimensional space, and it just can adjust the overall level of the process factors. In the view of this problem, a segmented non-uniform dielectric module design solution is proposed for the regulation of the plasma profile in a CCP chamber. The solution achieves refined and flexible regulation of the plasma profile in the radial direction via configuring the relative permittivity and the width of each segment. In order to solve this design problem, a novel simulation-based auto-design approach is proposed, which can automatically design the positional sequence with multi independent variables to make the output target profile in the parameterized simulation model approximate the one that users preset. This approach employs an idea of quasi-closed-loop control system, and works in an iterative mode. It starts from initial values of the design variable sequences, and predicts better sequences via the feedback of the profile error between the output target profile and the expected one. It never stops until the profile error is narrowed in the preset tolerance. Physics Dong Xiang verfasserin aut Wang Yang verfasserin aut Peng Mou verfasserin aut In AIP Advances AIP Publishing LLC, 2011 4(2014), 12, Seite 127124-127124-15 (DE-627)641391706 (DE-600)2583909-3 21583226 nnns volume:4 year:2014 number:12 pages:127124-127124-15 https://doi.org/10.1063/1.4904216 kostenfrei https://doaj.org/article/7fac9a635bb245208459c27a9fc3faae kostenfrei http://dx.doi.org/10.1063/1.4904216 kostenfrei https://doaj.org/toc/2158-3226 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 4 2014 12 127124-127124-15
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allfieldsGer	10.1063/1.4904216 doi (DE-627)DOAJ034470190 (DE-599)DOAJ7fac9a635bb245208459c27a9fc3faae DE-627 ger DE-627 rakwb eng QC1-999 Huanxiong Xia verfasserin aut The segmented non-uniform dielectric module design for uniformity control of plasma profile in a capacitively coupled plasma chamber 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Low-temperature plasma technique is one of the critical techniques in IC manufacturing process, such as etching and thin-film deposition, and the uniformity greatly impacts the process quality, so the design for the plasma uniformity control is very important but difficult. It is hard to finely and flexibly regulate the spatial distribution of the plasma in the chamber via controlling the discharge parameters or modifying the structure in zero-dimensional space, and it just can adjust the overall level of the process factors. In the view of this problem, a segmented non-uniform dielectric module design solution is proposed for the regulation of the plasma profile in a CCP chamber. The solution achieves refined and flexible regulation of the plasma profile in the radial direction via configuring the relative permittivity and the width of each segment. In order to solve this design problem, a novel simulation-based auto-design approach is proposed, which can automatically design the positional sequence with multi independent variables to make the output target profile in the parameterized simulation model approximate the one that users preset. This approach employs an idea of quasi-closed-loop control system, and works in an iterative mode. It starts from initial values of the design variable sequences, and predicts better sequences via the feedback of the profile error between the output target profile and the expected one. It never stops until the profile error is narrowed in the preset tolerance. Physics Dong Xiang verfasserin aut Wang Yang verfasserin aut Peng Mou verfasserin aut In AIP Advances AIP Publishing LLC, 2011 4(2014), 12, Seite 127124-127124-15 (DE-627)641391706 (DE-600)2583909-3 21583226 nnns volume:4 year:2014 number:12 pages:127124-127124-15 https://doi.org/10.1063/1.4904216 kostenfrei https://doaj.org/article/7fac9a635bb245208459c27a9fc3faae kostenfrei http://dx.doi.org/10.1063/1.4904216 kostenfrei https://doaj.org/toc/2158-3226 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 4 2014 12 127124-127124-15
allfieldsSound	10.1063/1.4904216 doi (DE-627)DOAJ034470190 (DE-599)DOAJ7fac9a635bb245208459c27a9fc3faae DE-627 ger DE-627 rakwb eng QC1-999 Huanxiong Xia verfasserin aut The segmented non-uniform dielectric module design for uniformity control of plasma profile in a capacitively coupled plasma chamber 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Low-temperature plasma technique is one of the critical techniques in IC manufacturing process, such as etching and thin-film deposition, and the uniformity greatly impacts the process quality, so the design for the plasma uniformity control is very important but difficult. It is hard to finely and flexibly regulate the spatial distribution of the plasma in the chamber via controlling the discharge parameters or modifying the structure in zero-dimensional space, and it just can adjust the overall level of the process factors. In the view of this problem, a segmented non-uniform dielectric module design solution is proposed for the regulation of the plasma profile in a CCP chamber. The solution achieves refined and flexible regulation of the plasma profile in the radial direction via configuring the relative permittivity and the width of each segment. In order to solve this design problem, a novel simulation-based auto-design approach is proposed, which can automatically design the positional sequence with multi independent variables to make the output target profile in the parameterized simulation model approximate the one that users preset. This approach employs an idea of quasi-closed-loop control system, and works in an iterative mode. It starts from initial values of the design variable sequences, and predicts better sequences via the feedback of the profile error between the output target profile and the expected one. It never stops until the profile error is narrowed in the preset tolerance. Physics Dong Xiang verfasserin aut Wang Yang verfasserin aut Peng Mou verfasserin aut In AIP Advances AIP Publishing LLC, 2011 4(2014), 12, Seite 127124-127124-15 (DE-627)641391706 (DE-600)2583909-3 21583226 nnns volume:4 year:2014 number:12 pages:127124-127124-15 https://doi.org/10.1063/1.4904216 kostenfrei https://doaj.org/article/7fac9a635bb245208459c27a9fc3faae kostenfrei http://dx.doi.org/10.1063/1.4904216 kostenfrei https://doaj.org/toc/2158-3226 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 4 2014 12 127124-127124-15
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source	In AIP Advances 4(2014), 12, Seite 127124-127124-15 volume:4 year:2014 number:12 pages:127124-127124-15
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author	Huanxiong Xia
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title	The segmented non-uniform dielectric module design for uniformity control of plasma profile in a capacitively coupled plasma chamber
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title_sort	segmented non-uniform dielectric module design for uniformity control of plasma profile in a capacitively coupled plasma chamber
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title_auth	The segmented non-uniform dielectric module design for uniformity control of plasma profile in a capacitively coupled plasma chamber
abstract	Low-temperature plasma technique is one of the critical techniques in IC manufacturing process, such as etching and thin-film deposition, and the uniformity greatly impacts the process quality, so the design for the plasma uniformity control is very important but difficult. It is hard to finely and flexibly regulate the spatial distribution of the plasma in the chamber via controlling the discharge parameters or modifying the structure in zero-dimensional space, and it just can adjust the overall level of the process factors. In the view of this problem, a segmented non-uniform dielectric module design solution is proposed for the regulation of the plasma profile in a CCP chamber. The solution achieves refined and flexible regulation of the plasma profile in the radial direction via configuring the relative permittivity and the width of each segment. In order to solve this design problem, a novel simulation-based auto-design approach is proposed, which can automatically design the positional sequence with multi independent variables to make the output target profile in the parameterized simulation model approximate the one that users preset. This approach employs an idea of quasi-closed-loop control system, and works in an iterative mode. It starts from initial values of the design variable sequences, and predicts better sequences via the feedback of the profile error between the output target profile and the expected one. It never stops until the profile error is narrowed in the preset tolerance.
abstractGer	Low-temperature plasma technique is one of the critical techniques in IC manufacturing process, such as etching and thin-film deposition, and the uniformity greatly impacts the process quality, so the design for the plasma uniformity control is very important but difficult. It is hard to finely and flexibly regulate the spatial distribution of the plasma in the chamber via controlling the discharge parameters or modifying the structure in zero-dimensional space, and it just can adjust the overall level of the process factors. In the view of this problem, a segmented non-uniform dielectric module design solution is proposed for the regulation of the plasma profile in a CCP chamber. The solution achieves refined and flexible regulation of the plasma profile in the radial direction via configuring the relative permittivity and the width of each segment. In order to solve this design problem, a novel simulation-based auto-design approach is proposed, which can automatically design the positional sequence with multi independent variables to make the output target profile in the parameterized simulation model approximate the one that users preset. This approach employs an idea of quasi-closed-loop control system, and works in an iterative mode. It starts from initial values of the design variable sequences, and predicts better sequences via the feedback of the profile error between the output target profile and the expected one. It never stops until the profile error is narrowed in the preset tolerance.
abstract_unstemmed	Low-temperature plasma technique is one of the critical techniques in IC manufacturing process, such as etching and thin-film deposition, and the uniformity greatly impacts the process quality, so the design for the plasma uniformity control is very important but difficult. It is hard to finely and flexibly regulate the spatial distribution of the plasma in the chamber via controlling the discharge parameters or modifying the structure in zero-dimensional space, and it just can adjust the overall level of the process factors. In the view of this problem, a segmented non-uniform dielectric module design solution is proposed for the regulation of the plasma profile in a CCP chamber. The solution achieves refined and flexible regulation of the plasma profile in the radial direction via configuring the relative permittivity and the width of each segment. In order to solve this design problem, a novel simulation-based auto-design approach is proposed, which can automatically design the positional sequence with multi independent variables to make the output target profile in the parameterized simulation model approximate the one that users preset. This approach employs an idea of quasi-closed-loop control system, and works in an iterative mode. It starts from initial values of the design variable sequences, and predicts better sequences via the feedback of the profile error between the output target profile and the expected one. It never stops until the profile error is narrowed in the preset tolerance.
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title_short	The segmented non-uniform dielectric module design for uniformity control of plasma profile in a capacitively coupled plasma chamber
url	https://doi.org/10.1063/1.4904216 https://doaj.org/article/7fac9a635bb245208459c27a9fc3faae http://dx.doi.org/10.1063/1.4904216 https://doaj.org/toc/2158-3226
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The segmented non-uniform dielectric module design for uniformity control of plasma profile in a capacitively coupled plasma chamber

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