Information readout devices for large-size matrices of IR-photodiodes
The research results are given for designed and manufactured readout devices for matrices of infrared photodiodes of formats 640×512 and 320×256. The article comments the architecture of reading circuit diagramming and its influence on the parameters of the FPU, the design of interfaces with an infr...
Ausführliche Beschreibung
Autor*in: |
Reva V. P. [verfasserIn] Marchishin I. V. [verfasserIn] Korinets S. V. [verfasserIn] Sizov F. F. [verfasserIn] |
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E-Artikel |
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Sprache: |
Englisch ; Russisch |
Erschienen: |
2011 |
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Übergeordnetes Werk: |
In: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature - Politehperiodika, 2011, (2011), 4, Seite 25-28 |
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Übergeordnetes Werk: |
year:2011 ; number:4 ; pages:25-28 |
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Katalog-ID: |
DOAJ03519619X |
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(DE-627)DOAJ03519619X (DE-599)DOAJ79f0448ca67c4b20992fe7e9626c1eac DE-627 ger DE-627 rakwb eng rus TK1-9971 Reva V. P. verfasserin aut Information readout devices for large-size matrices of IR-photodiodes 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The research results are given for designed and manufactured readout devices for matrices of infrared photodiodes of formats 640×512 and 320×256. The article comments the architecture of reading circuit diagramming and its influence on the parameters of the FPU, the design of interfaces with an infrared photodiodes, the design of the reading circuit of the information charge, the influence of the geometric dimensions of the matrix elements on the output parameters of readout devices. A comparison of calculated and measured parameters of readout devices has been carried out. photodetectors readout circuit IR photodiodes silicon integrated circuits Electrical engineering. Electronics. Nuclear engineering Marchishin I. V. verfasserin aut Korinets S. V. verfasserin aut Sizov F. F. verfasserin aut In Tekhnologiya i Konstruirovanie v Elektronnoi Apparature Politehperiodika, 2011 (2011), 4, Seite 25-28 (DE-627)736433473 (DE-600)2704178-5 23099992 nnns year:2011 number:4 pages:25-28 https://doaj.org/article/79f0448ca67c4b20992fe7e9626c1eac kostenfrei http://www.tkea.com.ua/tkea/2011/4_2011/pdf/05.zip kostenfrei https://doaj.org/toc/2225-5818 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 2011 4 25-28 |
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(DE-627)DOAJ03519619X (DE-599)DOAJ79f0448ca67c4b20992fe7e9626c1eac DE-627 ger DE-627 rakwb eng rus TK1-9971 Reva V. P. verfasserin aut Information readout devices for large-size matrices of IR-photodiodes 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The research results are given for designed and manufactured readout devices for matrices of infrared photodiodes of formats 640×512 and 320×256. The article comments the architecture of reading circuit diagramming and its influence on the parameters of the FPU, the design of interfaces with an infrared photodiodes, the design of the reading circuit of the information charge, the influence of the geometric dimensions of the matrix elements on the output parameters of readout devices. A comparison of calculated and measured parameters of readout devices has been carried out. photodetectors readout circuit IR photodiodes silicon integrated circuits Electrical engineering. Electronics. Nuclear engineering Marchishin I. V. verfasserin aut Korinets S. V. verfasserin aut Sizov F. F. verfasserin aut In Tekhnologiya i Konstruirovanie v Elektronnoi Apparature Politehperiodika, 2011 (2011), 4, Seite 25-28 (DE-627)736433473 (DE-600)2704178-5 23099992 nnns year:2011 number:4 pages:25-28 https://doaj.org/article/79f0448ca67c4b20992fe7e9626c1eac kostenfrei http://www.tkea.com.ua/tkea/2011/4_2011/pdf/05.zip kostenfrei https://doaj.org/toc/2225-5818 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 2011 4 25-28 |
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(DE-627)DOAJ03519619X (DE-599)DOAJ79f0448ca67c4b20992fe7e9626c1eac DE-627 ger DE-627 rakwb eng rus TK1-9971 Reva V. P. verfasserin aut Information readout devices for large-size matrices of IR-photodiodes 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The research results are given for designed and manufactured readout devices for matrices of infrared photodiodes of formats 640×512 and 320×256. The article comments the architecture of reading circuit diagramming and its influence on the parameters of the FPU, the design of interfaces with an infrared photodiodes, the design of the reading circuit of the information charge, the influence of the geometric dimensions of the matrix elements on the output parameters of readout devices. A comparison of calculated and measured parameters of readout devices has been carried out. photodetectors readout circuit IR photodiodes silicon integrated circuits Electrical engineering. Electronics. Nuclear engineering Marchishin I. V. verfasserin aut Korinets S. V. verfasserin aut Sizov F. F. verfasserin aut In Tekhnologiya i Konstruirovanie v Elektronnoi Apparature Politehperiodika, 2011 (2011), 4, Seite 25-28 (DE-627)736433473 (DE-600)2704178-5 23099992 nnns year:2011 number:4 pages:25-28 https://doaj.org/article/79f0448ca67c4b20992fe7e9626c1eac kostenfrei http://www.tkea.com.ua/tkea/2011/4_2011/pdf/05.zip kostenfrei https://doaj.org/toc/2225-5818 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 2011 4 25-28 |
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(DE-627)DOAJ03519619X (DE-599)DOAJ79f0448ca67c4b20992fe7e9626c1eac DE-627 ger DE-627 rakwb eng rus TK1-9971 Reva V. P. verfasserin aut Information readout devices for large-size matrices of IR-photodiodes 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The research results are given for designed and manufactured readout devices for matrices of infrared photodiodes of formats 640×512 and 320×256. The article comments the architecture of reading circuit diagramming and its influence on the parameters of the FPU, the design of interfaces with an infrared photodiodes, the design of the reading circuit of the information charge, the influence of the geometric dimensions of the matrix elements on the output parameters of readout devices. A comparison of calculated and measured parameters of readout devices has been carried out. photodetectors readout circuit IR photodiodes silicon integrated circuits Electrical engineering. Electronics. Nuclear engineering Marchishin I. V. verfasserin aut Korinets S. V. verfasserin aut Sizov F. F. verfasserin aut In Tekhnologiya i Konstruirovanie v Elektronnoi Apparature Politehperiodika, 2011 (2011), 4, Seite 25-28 (DE-627)736433473 (DE-600)2704178-5 23099992 nnns year:2011 number:4 pages:25-28 https://doaj.org/article/79f0448ca67c4b20992fe7e9626c1eac kostenfrei http://www.tkea.com.ua/tkea/2011/4_2011/pdf/05.zip kostenfrei https://doaj.org/toc/2225-5818 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 2011 4 25-28 |
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The research results are given for designed and manufactured readout devices for matrices of infrared photodiodes of formats 640×512 and 320×256. The article comments the architecture of reading circuit diagramming and its influence on the parameters of the FPU, the design of interfaces with an infrared photodiodes, the design of the reading circuit of the information charge, the influence of the geometric dimensions of the matrix elements on the output parameters of readout devices. A comparison of calculated and measured parameters of readout devices has been carried out. |
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The research results are given for designed and manufactured readout devices for matrices of infrared photodiodes of formats 640×512 and 320×256. The article comments the architecture of reading circuit diagramming and its influence on the parameters of the FPU, the design of interfaces with an infrared photodiodes, the design of the reading circuit of the information charge, the influence of the geometric dimensions of the matrix elements on the output parameters of readout devices. A comparison of calculated and measured parameters of readout devices has been carried out. |
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The research results are given for designed and manufactured readout devices for matrices of infrared photodiodes of formats 640×512 and 320×256. The article comments the architecture of reading circuit diagramming and its influence on the parameters of the FPU, the design of interfaces with an infrared photodiodes, the design of the reading circuit of the information charge, the influence of the geometric dimensions of the matrix elements on the output parameters of readout devices. A comparison of calculated and measured parameters of readout devices has been carried out. |
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