Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing
Abstract We have explored the effect of post-annealing on the electrical properties of an indium gallium zinc oxide (IGZO) transistor with an Al2O3 bottom gate dielectric, formed by a sol–gel process. The post-annealed IGZO device demonstrated improved electrical performance in terms of threshold va...
Ausführliche Beschreibung
Autor*in: |
Esther Lee [verfasserIn] Tae Hyeon Kim [verfasserIn] Seung Won Lee [verfasserIn] Jee Hoon Kim [verfasserIn] Jaeun Kim [verfasserIn] Tae Gun Jeong [verfasserIn] Ji-Hoon Ahn [verfasserIn] Byungjin Cho [verfasserIn] |
---|
Format: |
E-Artikel |
---|---|
Sprache: |
Englisch |
Erschienen: |
2019 |
---|
Schlagwörter: |
Indium gallium zinc oxide IGZO Capacitance–voltage measurement |
---|
Übergeordnetes Werk: |
In: Nano Convergence - SpringerOpen, 2015, 6(2019), 1, Seite 8 |
---|---|
Übergeordnetes Werk: |
volume:6 ; year:2019 ; number:1 ; pages:8 |
Links: |
---|
DOI / URN: |
10.1186/s40580-019-0194-1 |
---|
Katalog-ID: |
DOAJ036356956 |
---|
LEADER | 01000caa a22002652 4500 | ||
---|---|---|---|
001 | DOAJ036356956 | ||
003 | DE-627 | ||
005 | 20230502123754.0 | ||
007 | cr uuu---uuuuu | ||
008 | 230227s2019 xx |||||o 00| ||eng c | ||
024 | 7 | |a 10.1186/s40580-019-0194-1 |2 doi | |
035 | |a (DE-627)DOAJ036356956 | ||
035 | |a (DE-599)DOAJ5a91faa09b684f3f9b8a48e31950e624 | ||
040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
041 | |a eng | ||
050 | 0 | |a TP1-1185 | |
050 | 0 | |a TP248.13-248.65 | |
050 | 0 | |a QC1-999 | |
100 | 0 | |a Esther Lee |e verfasserin |4 aut | |
245 | 1 | 0 | |a Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing |
264 | 1 | |c 2019 | |
336 | |a Text |b txt |2 rdacontent | ||
337 | |a Computermedien |b c |2 rdamedia | ||
338 | |a Online-Ressource |b cr |2 rdacarrier | ||
520 | |a Abstract We have explored the effect of post-annealing on the electrical properties of an indium gallium zinc oxide (IGZO) transistor with an Al2O3 bottom gate dielectric, formed by a sol–gel process. The post-annealed IGZO device demonstrated improved electrical performance in terms of threshold variation, on/off ratio, subthreshold swing, and mobility compared to the non-annealed reference device. Capacitance–voltage measurement confirmed that annealing can lead to enhanced capacitance properties due to reduced charge trapping. Depth profile analysis using X-ray photoelectron spectroscopy proved that percentage of both the oxygen vacancy (VO) and the hydroxyl groups (M–OH) within the IGZO/Al2O3 layers, which serve as a charge trapping source, can be substantially reduced by annealing the fabricated transistor device. Furthermore, the undesired degradation of the contact interface between source/drain electrode and the channel, which mainly concerns VO, can be largely prevented by post-annealing. Thus, the facile annealing process also improves the electrical bias stress stability. This simple post annealing approach provides a strategy for realising better performance and reliability of the solid sol–gel oxide transistor. | ||
650 | 4 | |a Indium gallium zinc oxide IGZO | |
650 | 4 | |a Post annealing | |
650 | 4 | |a Capacitance–voltage measurement | |
650 | 4 | |a X-ray photoelectron spectroscopy depth profiling | |
650 | 4 | |a Electrical bias stress stability | |
653 | 0 | |a Technology | |
653 | 0 | |a T | |
653 | 0 | |a Chemical technology | |
653 | 0 | |a Biotechnology | |
653 | 0 | |a Science | |
653 | 0 | |a Q | |
653 | 0 | |a Physics | |
700 | 0 | |a Tae Hyeon Kim |e verfasserin |4 aut | |
700 | 0 | |a Seung Won Lee |e verfasserin |4 aut | |
700 | 0 | |a Jee Hoon Kim |e verfasserin |4 aut | |
700 | 0 | |a Jaeun Kim |e verfasserin |4 aut | |
700 | 0 | |a Tae Gun Jeong |e verfasserin |4 aut | |
700 | 0 | |a Ji-Hoon Ahn |e verfasserin |4 aut | |
700 | 0 | |a Byungjin Cho |e verfasserin |4 aut | |
773 | 0 | 8 | |i In |t Nano Convergence |d SpringerOpen, 2015 |g 6(2019), 1, Seite 8 |w (DE-627)780378938 |w (DE-600)2760386-6 |x 21965404 |7 nnns |
773 | 1 | 8 | |g volume:6 |g year:2019 |g number:1 |g pages:8 |
856 | 4 | 0 | |u https://doi.org/10.1186/s40580-019-0194-1 |z kostenfrei |
856 | 4 | 0 | |u https://doaj.org/article/5a91faa09b684f3f9b8a48e31950e624 |z kostenfrei |
856 | 4 | 0 | |u http://link.springer.com/article/10.1186/s40580-019-0194-1 |z kostenfrei |
856 | 4 | 2 | |u https://doaj.org/toc/2196-5404 |y Journal toc |z kostenfrei |
912 | |a GBV_USEFLAG_A | ||
912 | |a SYSFLAG_A | ||
912 | |a GBV_DOAJ | ||
912 | |a SSG-OLC-PHA | ||
912 | |a GBV_ILN_20 | ||
912 | |a GBV_ILN_22 | ||
912 | |a GBV_ILN_23 | ||
912 | |a GBV_ILN_24 | ||
912 | |a GBV_ILN_31 | ||
912 | |a GBV_ILN_39 | ||
912 | |a GBV_ILN_40 | ||
912 | |a GBV_ILN_60 | ||
912 | |a GBV_ILN_62 | ||
912 | |a GBV_ILN_63 | ||
912 | |a GBV_ILN_65 | ||
912 | |a GBV_ILN_69 | ||
912 | |a GBV_ILN_70 | ||
912 | |a GBV_ILN_73 | ||
912 | |a GBV_ILN_95 | ||
912 | |a GBV_ILN_105 | ||
912 | |a GBV_ILN_110 | ||
912 | |a GBV_ILN_151 | ||
912 | |a GBV_ILN_161 | ||
912 | |a GBV_ILN_170 | ||
912 | |a GBV_ILN_213 | ||
912 | |a GBV_ILN_230 | ||
912 | |a GBV_ILN_285 | ||
912 | |a GBV_ILN_293 | ||
912 | |a GBV_ILN_370 | ||
912 | |a GBV_ILN_602 | ||
912 | |a GBV_ILN_2014 | ||
912 | |a GBV_ILN_2055 | ||
912 | |a GBV_ILN_4012 | ||
912 | |a GBV_ILN_4037 | ||
912 | |a GBV_ILN_4112 | ||
912 | |a GBV_ILN_4125 | ||
912 | |a GBV_ILN_4126 | ||
912 | |a GBV_ILN_4249 | ||
912 | |a GBV_ILN_4305 | ||
912 | |a GBV_ILN_4306 | ||
912 | |a GBV_ILN_4307 | ||
912 | |a GBV_ILN_4313 | ||
912 | |a GBV_ILN_4322 | ||
912 | |a GBV_ILN_4323 | ||
912 | |a GBV_ILN_4324 | ||
912 | |a GBV_ILN_4325 | ||
912 | |a GBV_ILN_4335 | ||
912 | |a GBV_ILN_4338 | ||
912 | |a GBV_ILN_4367 | ||
912 | |a GBV_ILN_4700 | ||
951 | |a AR | ||
952 | |d 6 |j 2019 |e 1 |h 8 |
author_variant |
e l el t h k thk s w l swl j h k jhk j k jk t g j tgj j h a jha b c bc |
---|---|
matchkey_str |
article:21965404:2019----::mrvdlcrclefracoaoglgornitrihiha23aeil |
hierarchy_sort_str |
2019 |
callnumber-subject-code |
TP |
publishDate |
2019 |
allfields |
10.1186/s40580-019-0194-1 doi (DE-627)DOAJ036356956 (DE-599)DOAJ5a91faa09b684f3f9b8a48e31950e624 DE-627 ger DE-627 rakwb eng TP1-1185 TP248.13-248.65 QC1-999 Esther Lee verfasserin aut Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We have explored the effect of post-annealing on the electrical properties of an indium gallium zinc oxide (IGZO) transistor with an Al2O3 bottom gate dielectric, formed by a sol–gel process. The post-annealed IGZO device demonstrated improved electrical performance in terms of threshold variation, on/off ratio, subthreshold swing, and mobility compared to the non-annealed reference device. Capacitance–voltage measurement confirmed that annealing can lead to enhanced capacitance properties due to reduced charge trapping. Depth profile analysis using X-ray photoelectron spectroscopy proved that percentage of both the oxygen vacancy (VO) and the hydroxyl groups (M–OH) within the IGZO/Al2O3 layers, which serve as a charge trapping source, can be substantially reduced by annealing the fabricated transistor device. Furthermore, the undesired degradation of the contact interface between source/drain electrode and the channel, which mainly concerns VO, can be largely prevented by post-annealing. Thus, the facile annealing process also improves the electrical bias stress stability. This simple post annealing approach provides a strategy for realising better performance and reliability of the solid sol–gel oxide transistor. Indium gallium zinc oxide IGZO Post annealing Capacitance–voltage measurement X-ray photoelectron spectroscopy depth profiling Electrical bias stress stability Technology T Chemical technology Biotechnology Science Q Physics Tae Hyeon Kim verfasserin aut Seung Won Lee verfasserin aut Jee Hoon Kim verfasserin aut Jaeun Kim verfasserin aut Tae Gun Jeong verfasserin aut Ji-Hoon Ahn verfasserin aut Byungjin Cho verfasserin aut In Nano Convergence SpringerOpen, 2015 6(2019), 1, Seite 8 (DE-627)780378938 (DE-600)2760386-6 21965404 nnns volume:6 year:2019 number:1 pages:8 https://doi.org/10.1186/s40580-019-0194-1 kostenfrei https://doaj.org/article/5a91faa09b684f3f9b8a48e31950e624 kostenfrei http://link.springer.com/article/10.1186/s40580-019-0194-1 kostenfrei https://doaj.org/toc/2196-5404 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 6 2019 1 8 |
spelling |
10.1186/s40580-019-0194-1 doi (DE-627)DOAJ036356956 (DE-599)DOAJ5a91faa09b684f3f9b8a48e31950e624 DE-627 ger DE-627 rakwb eng TP1-1185 TP248.13-248.65 QC1-999 Esther Lee verfasserin aut Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We have explored the effect of post-annealing on the electrical properties of an indium gallium zinc oxide (IGZO) transistor with an Al2O3 bottom gate dielectric, formed by a sol–gel process. The post-annealed IGZO device demonstrated improved electrical performance in terms of threshold variation, on/off ratio, subthreshold swing, and mobility compared to the non-annealed reference device. Capacitance–voltage measurement confirmed that annealing can lead to enhanced capacitance properties due to reduced charge trapping. Depth profile analysis using X-ray photoelectron spectroscopy proved that percentage of both the oxygen vacancy (VO) and the hydroxyl groups (M–OH) within the IGZO/Al2O3 layers, which serve as a charge trapping source, can be substantially reduced by annealing the fabricated transistor device. Furthermore, the undesired degradation of the contact interface between source/drain electrode and the channel, which mainly concerns VO, can be largely prevented by post-annealing. Thus, the facile annealing process also improves the electrical bias stress stability. This simple post annealing approach provides a strategy for realising better performance and reliability of the solid sol–gel oxide transistor. Indium gallium zinc oxide IGZO Post annealing Capacitance–voltage measurement X-ray photoelectron spectroscopy depth profiling Electrical bias stress stability Technology T Chemical technology Biotechnology Science Q Physics Tae Hyeon Kim verfasserin aut Seung Won Lee verfasserin aut Jee Hoon Kim verfasserin aut Jaeun Kim verfasserin aut Tae Gun Jeong verfasserin aut Ji-Hoon Ahn verfasserin aut Byungjin Cho verfasserin aut In Nano Convergence SpringerOpen, 2015 6(2019), 1, Seite 8 (DE-627)780378938 (DE-600)2760386-6 21965404 nnns volume:6 year:2019 number:1 pages:8 https://doi.org/10.1186/s40580-019-0194-1 kostenfrei https://doaj.org/article/5a91faa09b684f3f9b8a48e31950e624 kostenfrei http://link.springer.com/article/10.1186/s40580-019-0194-1 kostenfrei https://doaj.org/toc/2196-5404 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 6 2019 1 8 |
allfields_unstemmed |
10.1186/s40580-019-0194-1 doi (DE-627)DOAJ036356956 (DE-599)DOAJ5a91faa09b684f3f9b8a48e31950e624 DE-627 ger DE-627 rakwb eng TP1-1185 TP248.13-248.65 QC1-999 Esther Lee verfasserin aut Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We have explored the effect of post-annealing on the electrical properties of an indium gallium zinc oxide (IGZO) transistor with an Al2O3 bottom gate dielectric, formed by a sol–gel process. The post-annealed IGZO device demonstrated improved electrical performance in terms of threshold variation, on/off ratio, subthreshold swing, and mobility compared to the non-annealed reference device. Capacitance–voltage measurement confirmed that annealing can lead to enhanced capacitance properties due to reduced charge trapping. Depth profile analysis using X-ray photoelectron spectroscopy proved that percentage of both the oxygen vacancy (VO) and the hydroxyl groups (M–OH) within the IGZO/Al2O3 layers, which serve as a charge trapping source, can be substantially reduced by annealing the fabricated transistor device. Furthermore, the undesired degradation of the contact interface between source/drain electrode and the channel, which mainly concerns VO, can be largely prevented by post-annealing. Thus, the facile annealing process also improves the electrical bias stress stability. This simple post annealing approach provides a strategy for realising better performance and reliability of the solid sol–gel oxide transistor. Indium gallium zinc oxide IGZO Post annealing Capacitance–voltage measurement X-ray photoelectron spectroscopy depth profiling Electrical bias stress stability Technology T Chemical technology Biotechnology Science Q Physics Tae Hyeon Kim verfasserin aut Seung Won Lee verfasserin aut Jee Hoon Kim verfasserin aut Jaeun Kim verfasserin aut Tae Gun Jeong verfasserin aut Ji-Hoon Ahn verfasserin aut Byungjin Cho verfasserin aut In Nano Convergence SpringerOpen, 2015 6(2019), 1, Seite 8 (DE-627)780378938 (DE-600)2760386-6 21965404 nnns volume:6 year:2019 number:1 pages:8 https://doi.org/10.1186/s40580-019-0194-1 kostenfrei https://doaj.org/article/5a91faa09b684f3f9b8a48e31950e624 kostenfrei http://link.springer.com/article/10.1186/s40580-019-0194-1 kostenfrei https://doaj.org/toc/2196-5404 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 6 2019 1 8 |
allfieldsGer |
10.1186/s40580-019-0194-1 doi (DE-627)DOAJ036356956 (DE-599)DOAJ5a91faa09b684f3f9b8a48e31950e624 DE-627 ger DE-627 rakwb eng TP1-1185 TP248.13-248.65 QC1-999 Esther Lee verfasserin aut Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We have explored the effect of post-annealing on the electrical properties of an indium gallium zinc oxide (IGZO) transistor with an Al2O3 bottom gate dielectric, formed by a sol–gel process. The post-annealed IGZO device demonstrated improved electrical performance in terms of threshold variation, on/off ratio, subthreshold swing, and mobility compared to the non-annealed reference device. Capacitance–voltage measurement confirmed that annealing can lead to enhanced capacitance properties due to reduced charge trapping. Depth profile analysis using X-ray photoelectron spectroscopy proved that percentage of both the oxygen vacancy (VO) and the hydroxyl groups (M–OH) within the IGZO/Al2O3 layers, which serve as a charge trapping source, can be substantially reduced by annealing the fabricated transistor device. Furthermore, the undesired degradation of the contact interface between source/drain electrode and the channel, which mainly concerns VO, can be largely prevented by post-annealing. Thus, the facile annealing process also improves the electrical bias stress stability. This simple post annealing approach provides a strategy for realising better performance and reliability of the solid sol–gel oxide transistor. Indium gallium zinc oxide IGZO Post annealing Capacitance–voltage measurement X-ray photoelectron spectroscopy depth profiling Electrical bias stress stability Technology T Chemical technology Biotechnology Science Q Physics Tae Hyeon Kim verfasserin aut Seung Won Lee verfasserin aut Jee Hoon Kim verfasserin aut Jaeun Kim verfasserin aut Tae Gun Jeong verfasserin aut Ji-Hoon Ahn verfasserin aut Byungjin Cho verfasserin aut In Nano Convergence SpringerOpen, 2015 6(2019), 1, Seite 8 (DE-627)780378938 (DE-600)2760386-6 21965404 nnns volume:6 year:2019 number:1 pages:8 https://doi.org/10.1186/s40580-019-0194-1 kostenfrei https://doaj.org/article/5a91faa09b684f3f9b8a48e31950e624 kostenfrei http://link.springer.com/article/10.1186/s40580-019-0194-1 kostenfrei https://doaj.org/toc/2196-5404 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 6 2019 1 8 |
allfieldsSound |
10.1186/s40580-019-0194-1 doi (DE-627)DOAJ036356956 (DE-599)DOAJ5a91faa09b684f3f9b8a48e31950e624 DE-627 ger DE-627 rakwb eng TP1-1185 TP248.13-248.65 QC1-999 Esther Lee verfasserin aut Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We have explored the effect of post-annealing on the electrical properties of an indium gallium zinc oxide (IGZO) transistor with an Al2O3 bottom gate dielectric, formed by a sol–gel process. The post-annealed IGZO device demonstrated improved electrical performance in terms of threshold variation, on/off ratio, subthreshold swing, and mobility compared to the non-annealed reference device. Capacitance–voltage measurement confirmed that annealing can lead to enhanced capacitance properties due to reduced charge trapping. Depth profile analysis using X-ray photoelectron spectroscopy proved that percentage of both the oxygen vacancy (VO) and the hydroxyl groups (M–OH) within the IGZO/Al2O3 layers, which serve as a charge trapping source, can be substantially reduced by annealing the fabricated transistor device. Furthermore, the undesired degradation of the contact interface between source/drain electrode and the channel, which mainly concerns VO, can be largely prevented by post-annealing. Thus, the facile annealing process also improves the electrical bias stress stability. This simple post annealing approach provides a strategy for realising better performance and reliability of the solid sol–gel oxide transistor. Indium gallium zinc oxide IGZO Post annealing Capacitance–voltage measurement X-ray photoelectron spectroscopy depth profiling Electrical bias stress stability Technology T Chemical technology Biotechnology Science Q Physics Tae Hyeon Kim verfasserin aut Seung Won Lee verfasserin aut Jee Hoon Kim verfasserin aut Jaeun Kim verfasserin aut Tae Gun Jeong verfasserin aut Ji-Hoon Ahn verfasserin aut Byungjin Cho verfasserin aut In Nano Convergence SpringerOpen, 2015 6(2019), 1, Seite 8 (DE-627)780378938 (DE-600)2760386-6 21965404 nnns volume:6 year:2019 number:1 pages:8 https://doi.org/10.1186/s40580-019-0194-1 kostenfrei https://doaj.org/article/5a91faa09b684f3f9b8a48e31950e624 kostenfrei http://link.springer.com/article/10.1186/s40580-019-0194-1 kostenfrei https://doaj.org/toc/2196-5404 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 6 2019 1 8 |
language |
English |
source |
In Nano Convergence 6(2019), 1, Seite 8 volume:6 year:2019 number:1 pages:8 |
sourceStr |
In Nano Convergence 6(2019), 1, Seite 8 volume:6 year:2019 number:1 pages:8 |
format_phy_str_mv |
Article |
institution |
findex.gbv.de |
topic_facet |
Indium gallium zinc oxide IGZO Post annealing Capacitance–voltage measurement X-ray photoelectron spectroscopy depth profiling Electrical bias stress stability Technology T Chemical technology Biotechnology Science Q Physics |
isfreeaccess_bool |
true |
container_title |
Nano Convergence |
authorswithroles_txt_mv |
Esther Lee @@aut@@ Tae Hyeon Kim @@aut@@ Seung Won Lee @@aut@@ Jee Hoon Kim @@aut@@ Jaeun Kim @@aut@@ Tae Gun Jeong @@aut@@ Ji-Hoon Ahn @@aut@@ Byungjin Cho @@aut@@ |
publishDateDaySort_date |
2019-01-01T00:00:00Z |
hierarchy_top_id |
780378938 |
id |
DOAJ036356956 |
language_de |
englisch |
fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ036356956</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230502123754.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230227s2019 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1186/s40580-019-0194-1</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ036356956</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJ5a91faa09b684f3f9b8a48e31950e624</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TP1-1185</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TP248.13-248.65</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QC1-999</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Esther Lee</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2019</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract We have explored the effect of post-annealing on the electrical properties of an indium gallium zinc oxide (IGZO) transistor with an Al2O3 bottom gate dielectric, formed by a sol–gel process. The post-annealed IGZO device demonstrated improved electrical performance in terms of threshold variation, on/off ratio, subthreshold swing, and mobility compared to the non-annealed reference device. Capacitance–voltage measurement confirmed that annealing can lead to enhanced capacitance properties due to reduced charge trapping. Depth profile analysis using X-ray photoelectron spectroscopy proved that percentage of both the oxygen vacancy (VO) and the hydroxyl groups (M–OH) within the IGZO/Al2O3 layers, which serve as a charge trapping source, can be substantially reduced by annealing the fabricated transistor device. Furthermore, the undesired degradation of the contact interface between source/drain electrode and the channel, which mainly concerns VO, can be largely prevented by post-annealing. Thus, the facile annealing process also improves the electrical bias stress stability. This simple post annealing approach provides a strategy for realising better performance and reliability of the solid sol–gel oxide transistor.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Indium gallium zinc oxide IGZO</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Post annealing</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Capacitance–voltage measurement</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">X-ray photoelectron spectroscopy depth profiling</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electrical bias stress stability</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Technology</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">T</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Chemical technology</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Biotechnology</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Science</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Q</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Physics</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Tae Hyeon Kim</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Seung Won Lee</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Jee Hoon Kim</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Jaeun Kim</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Tae Gun Jeong</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Ji-Hoon Ahn</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Byungjin Cho</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">Nano Convergence</subfield><subfield code="d">SpringerOpen, 2015</subfield><subfield code="g">6(2019), 1, Seite 8</subfield><subfield code="w">(DE-627)780378938</subfield><subfield code="w">(DE-600)2760386-6</subfield><subfield code="x">21965404</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:6</subfield><subfield code="g">year:2019</subfield><subfield code="g">number:1</subfield><subfield code="g">pages:8</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1186/s40580-019-0194-1</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/5a91faa09b684f3f9b8a48e31950e624</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://link.springer.com/article/10.1186/s40580-019-0194-1</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2196-5404</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">6</subfield><subfield code="j">2019</subfield><subfield code="e">1</subfield><subfield code="h">8</subfield></datafield></record></collection>
|
callnumber-first |
T - Technology |
author |
Esther Lee |
spellingShingle |
Esther Lee misc TP1-1185 misc TP248.13-248.65 misc QC1-999 misc Indium gallium zinc oxide IGZO misc Post annealing misc Capacitance–voltage measurement misc X-ray photoelectron spectroscopy depth profiling misc Electrical bias stress stability misc Technology misc T misc Chemical technology misc Biotechnology misc Science misc Q misc Physics Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing |
authorStr |
Esther Lee |
ppnlink_with_tag_str_mv |
@@773@@(DE-627)780378938 |
format |
electronic Article |
delete_txt_mv |
keep |
author_role |
aut aut aut aut aut aut aut aut |
collection |
DOAJ |
remote_str |
true |
callnumber-label |
TP1-1185 |
illustrated |
Not Illustrated |
issn |
21965404 |
topic_title |
TP1-1185 TP248.13-248.65 QC1-999 Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing Indium gallium zinc oxide IGZO Post annealing Capacitance–voltage measurement X-ray photoelectron spectroscopy depth profiling Electrical bias stress stability |
topic |
misc TP1-1185 misc TP248.13-248.65 misc QC1-999 misc Indium gallium zinc oxide IGZO misc Post annealing misc Capacitance–voltage measurement misc X-ray photoelectron spectroscopy depth profiling misc Electrical bias stress stability misc Technology misc T misc Chemical technology misc Biotechnology misc Science misc Q misc Physics |
topic_unstemmed |
misc TP1-1185 misc TP248.13-248.65 misc QC1-999 misc Indium gallium zinc oxide IGZO misc Post annealing misc Capacitance–voltage measurement misc X-ray photoelectron spectroscopy depth profiling misc Electrical bias stress stability misc Technology misc T misc Chemical technology misc Biotechnology misc Science misc Q misc Physics |
topic_browse |
misc TP1-1185 misc TP248.13-248.65 misc QC1-999 misc Indium gallium zinc oxide IGZO misc Post annealing misc Capacitance–voltage measurement misc X-ray photoelectron spectroscopy depth profiling misc Electrical bias stress stability misc Technology misc T misc Chemical technology misc Biotechnology misc Science misc Q misc Physics |
format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
format_main_str_mv |
Text Zeitschrift/Artikel |
carriertype_str_mv |
cr |
hierarchy_parent_title |
Nano Convergence |
hierarchy_parent_id |
780378938 |
hierarchy_top_title |
Nano Convergence |
isfreeaccess_txt |
true |
familylinks_str_mv |
(DE-627)780378938 (DE-600)2760386-6 |
title |
Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing |
ctrlnum |
(DE-627)DOAJ036356956 (DE-599)DOAJ5a91faa09b684f3f9b8a48e31950e624 |
title_full |
Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing |
author_sort |
Esther Lee |
journal |
Nano Convergence |
journalStr |
Nano Convergence |
callnumber-first-code |
T |
lang_code |
eng |
isOA_bool |
true |
recordtype |
marc |
publishDateSort |
2019 |
contenttype_str_mv |
txt |
container_start_page |
8 |
author_browse |
Esther Lee Tae Hyeon Kim Seung Won Lee Jee Hoon Kim Jaeun Kim Tae Gun Jeong Ji-Hoon Ahn Byungjin Cho |
container_volume |
6 |
class |
TP1-1185 TP248.13-248.65 QC1-999 |
format_se |
Elektronische Aufsätze |
author-letter |
Esther Lee |
doi_str_mv |
10.1186/s40580-019-0194-1 |
author2-role |
verfasserin |
title_sort |
improved electrical performance of a sol–gel igzo transistor with high-k al2o3 gate dielectric achieved by post annealing |
callnumber |
TP1-1185 |
title_auth |
Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing |
abstract |
Abstract We have explored the effect of post-annealing on the electrical properties of an indium gallium zinc oxide (IGZO) transistor with an Al2O3 bottom gate dielectric, formed by a sol–gel process. The post-annealed IGZO device demonstrated improved electrical performance in terms of threshold variation, on/off ratio, subthreshold swing, and mobility compared to the non-annealed reference device. Capacitance–voltage measurement confirmed that annealing can lead to enhanced capacitance properties due to reduced charge trapping. Depth profile analysis using X-ray photoelectron spectroscopy proved that percentage of both the oxygen vacancy (VO) and the hydroxyl groups (M–OH) within the IGZO/Al2O3 layers, which serve as a charge trapping source, can be substantially reduced by annealing the fabricated transistor device. Furthermore, the undesired degradation of the contact interface between source/drain electrode and the channel, which mainly concerns VO, can be largely prevented by post-annealing. Thus, the facile annealing process also improves the electrical bias stress stability. This simple post annealing approach provides a strategy for realising better performance and reliability of the solid sol–gel oxide transistor. |
abstractGer |
Abstract We have explored the effect of post-annealing on the electrical properties of an indium gallium zinc oxide (IGZO) transistor with an Al2O3 bottom gate dielectric, formed by a sol–gel process. The post-annealed IGZO device demonstrated improved electrical performance in terms of threshold variation, on/off ratio, subthreshold swing, and mobility compared to the non-annealed reference device. Capacitance–voltage measurement confirmed that annealing can lead to enhanced capacitance properties due to reduced charge trapping. Depth profile analysis using X-ray photoelectron spectroscopy proved that percentage of both the oxygen vacancy (VO) and the hydroxyl groups (M–OH) within the IGZO/Al2O3 layers, which serve as a charge trapping source, can be substantially reduced by annealing the fabricated transistor device. Furthermore, the undesired degradation of the contact interface between source/drain electrode and the channel, which mainly concerns VO, can be largely prevented by post-annealing. Thus, the facile annealing process also improves the electrical bias stress stability. This simple post annealing approach provides a strategy for realising better performance and reliability of the solid sol–gel oxide transistor. |
abstract_unstemmed |
Abstract We have explored the effect of post-annealing on the electrical properties of an indium gallium zinc oxide (IGZO) transistor with an Al2O3 bottom gate dielectric, formed by a sol–gel process. The post-annealed IGZO device demonstrated improved electrical performance in terms of threshold variation, on/off ratio, subthreshold swing, and mobility compared to the non-annealed reference device. Capacitance–voltage measurement confirmed that annealing can lead to enhanced capacitance properties due to reduced charge trapping. Depth profile analysis using X-ray photoelectron spectroscopy proved that percentage of both the oxygen vacancy (VO) and the hydroxyl groups (M–OH) within the IGZO/Al2O3 layers, which serve as a charge trapping source, can be substantially reduced by annealing the fabricated transistor device. Furthermore, the undesired degradation of the contact interface between source/drain electrode and the channel, which mainly concerns VO, can be largely prevented by post-annealing. Thus, the facile annealing process also improves the electrical bias stress stability. This simple post annealing approach provides a strategy for realising better performance and reliability of the solid sol–gel oxide transistor. |
collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 |
container_issue |
1 |
title_short |
Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing |
url |
https://doi.org/10.1186/s40580-019-0194-1 https://doaj.org/article/5a91faa09b684f3f9b8a48e31950e624 http://link.springer.com/article/10.1186/s40580-019-0194-1 https://doaj.org/toc/2196-5404 |
remote_bool |
true |
author2 |
Tae Hyeon Kim Seung Won Lee Jee Hoon Kim Jaeun Kim Tae Gun Jeong Ji-Hoon Ahn Byungjin Cho |
author2Str |
Tae Hyeon Kim Seung Won Lee Jee Hoon Kim Jaeun Kim Tae Gun Jeong Ji-Hoon Ahn Byungjin Cho |
ppnlink |
780378938 |
callnumber-subject |
TP - Chemical Technology |
mediatype_str_mv |
c |
isOA_txt |
true |
hochschulschrift_bool |
false |
doi_str |
10.1186/s40580-019-0194-1 |
callnumber-a |
TP1-1185 |
up_date |
2024-07-03T20:08:04.839Z |
_version_ |
1803589815991533569 |
fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ036356956</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230502123754.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230227s2019 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1186/s40580-019-0194-1</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ036356956</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJ5a91faa09b684f3f9b8a48e31950e624</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TP1-1185</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TP248.13-248.65</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QC1-999</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Esther Lee</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2019</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract We have explored the effect of post-annealing on the electrical properties of an indium gallium zinc oxide (IGZO) transistor with an Al2O3 bottom gate dielectric, formed by a sol–gel process. The post-annealed IGZO device demonstrated improved electrical performance in terms of threshold variation, on/off ratio, subthreshold swing, and mobility compared to the non-annealed reference device. Capacitance–voltage measurement confirmed that annealing can lead to enhanced capacitance properties due to reduced charge trapping. Depth profile analysis using X-ray photoelectron spectroscopy proved that percentage of both the oxygen vacancy (VO) and the hydroxyl groups (M–OH) within the IGZO/Al2O3 layers, which serve as a charge trapping source, can be substantially reduced by annealing the fabricated transistor device. Furthermore, the undesired degradation of the contact interface between source/drain electrode and the channel, which mainly concerns VO, can be largely prevented by post-annealing. Thus, the facile annealing process also improves the electrical bias stress stability. This simple post annealing approach provides a strategy for realising better performance and reliability of the solid sol–gel oxide transistor.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Indium gallium zinc oxide IGZO</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Post annealing</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Capacitance–voltage measurement</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">X-ray photoelectron spectroscopy depth profiling</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electrical bias stress stability</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Technology</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">T</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Chemical technology</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Biotechnology</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Science</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Q</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Physics</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Tae Hyeon Kim</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Seung Won Lee</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Jee Hoon Kim</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Jaeun Kim</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Tae Gun Jeong</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Ji-Hoon Ahn</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Byungjin Cho</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">Nano Convergence</subfield><subfield code="d">SpringerOpen, 2015</subfield><subfield code="g">6(2019), 1, Seite 8</subfield><subfield code="w">(DE-627)780378938</subfield><subfield code="w">(DE-600)2760386-6</subfield><subfield code="x">21965404</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:6</subfield><subfield code="g">year:2019</subfield><subfield code="g">number:1</subfield><subfield code="g">pages:8</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1186/s40580-019-0194-1</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/5a91faa09b684f3f9b8a48e31950e624</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://link.springer.com/article/10.1186/s40580-019-0194-1</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2196-5404</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">6</subfield><subfield code="j">2019</subfield><subfield code="e">1</subfield><subfield code="h">8</subfield></datafield></record></collection>
|
score |
7.4002314 |