Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures

Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion beam mixing in silicon (Si), germanium (Ge), and silicon germanium (SiGe) on the atomic structure of the sample, temperature, ion flux, and electrical doping by the implanted ions. The magnitude of mi...
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Autor*in:	Manuel Radek [verfasserIn] Bartosz Liedke [verfasserIn] Bernd Schmidt [verfasserIn] Matthias Voelskow [verfasserIn] Lothar Bischoff [verfasserIn] John Lundsgaard Hansen [verfasserIn] Arne Nylandsted Larsen [verfasserIn] Dominique Bougeard [verfasserIn] Roman Böttger [verfasserIn] Slawomir Prucnal [verfasserIn] Matthias Posselt [verfasserIn] Hartmut Bracht [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2017

Schlagwörter:	silicon germanium ion beam atomic mixing thermal spike radiation enhanced diffusion amorphization recrystallization molecular dynamics

Übergeordnetes Werk:	In: Materials - MDPI AG, 2009, 10(2017), 7, p 813
Übergeordnetes Werk:	volume:10 ; year:2017 ; number:7, p 813

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/ma10070813

Katalog-ID:	DOAJ040296040

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520			\|a Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion beam mixing in silicon (Si), germanium (Ge), and silicon germanium (SiGe) on the atomic structure of the sample, temperature, ion flux, and electrical doping by the implanted ions. The magnitude of mixing is determined by secondary ion mass spectrometry. Rutherford backscattering spectrometry in channeling geometry, Raman spectroscopy, and transmission electron microscopy provide information about the structural state after ion irradiation. Different temperature regimes with characteristic mixing properties are identified. A disparity in atomic mixing of Si and Ge becomes evident while SiGe shows an intermediate behavior. Overall, atomic mixing increases with temperature, and it is stronger in the amorphous than in the crystalline state. Ion-beam-induced mixing in Ge shows no dependence on doping by the implanted ions. In contrast, a doping effect is found in Si at higher temperature. Molecular dynamics simulations clearly show that ion beam mixing in Ge is mainly determined by the thermal spike mechanism. In the case of Si thermal spike, mixing prevails at low temperature whereas ion beam-induced enhanced self-diffusion dominates the atomic mixing at high temperature. The latter process is attributed to highly mobile Si di-interstitials formed under irradiation and during damage annealing.
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allfields	10.3390/ma10070813 doi (DE-627)DOAJ040296040 (DE-599)DOAJ1a56d01bc006496cab67af0ba7a4bffb DE-627 ger DE-627 rakwb eng TK1-9971 TA1-2040 QH201-278.5 QC120-168.85 Manuel Radek verfasserin aut Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion beam mixing in silicon (Si), germanium (Ge), and silicon germanium (SiGe) on the atomic structure of the sample, temperature, ion flux, and electrical doping by the implanted ions. The magnitude of mixing is determined by secondary ion mass spectrometry. Rutherford backscattering spectrometry in channeling geometry, Raman spectroscopy, and transmission electron microscopy provide information about the structural state after ion irradiation. Different temperature regimes with characteristic mixing properties are identified. A disparity in atomic mixing of Si and Ge becomes evident while SiGe shows an intermediate behavior. Overall, atomic mixing increases with temperature, and it is stronger in the amorphous than in the crystalline state. Ion-beam-induced mixing in Ge shows no dependence on doping by the implanted ions. In contrast, a doping effect is found in Si at higher temperature. Molecular dynamics simulations clearly show that ion beam mixing in Ge is mainly determined by the thermal spike mechanism. In the case of Si thermal spike, mixing prevails at low temperature whereas ion beam-induced enhanced self-diffusion dominates the atomic mixing at high temperature. The latter process is attributed to highly mobile Si di-interstitials formed under irradiation and during damage annealing. silicon germanium ion beam atomic mixing thermal spike radiation enhanced diffusion amorphization recrystallization molecular dynamics Technology T Electrical engineering. Electronics. Nuclear engineering Engineering (General). Civil engineering (General) Microscopy Descriptive and experimental mechanics Bartosz Liedke verfasserin aut Bernd Schmidt verfasserin aut Matthias Voelskow verfasserin aut Lothar Bischoff verfasserin aut John Lundsgaard Hansen verfasserin aut Arne Nylandsted Larsen verfasserin aut Dominique Bougeard verfasserin aut Roman Böttger verfasserin aut Slawomir Prucnal verfasserin aut Matthias Posselt verfasserin aut Hartmut Bracht verfasserin aut In Materials MDPI AG, 2009 10(2017), 7, p 813 (DE-627)595712649 (DE-600)2487261-1 19961944 nnns volume:10 year:2017 number:7, p 813 https://doi.org/10.3390/ma10070813 kostenfrei https://doaj.org/article/1a56d01bc006496cab67af0ba7a4bffb kostenfrei https://www.mdpi.com/1996-1944/10/7/813 kostenfrei https://doaj.org/toc/1996-1944 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2017 7, p 813
spelling	10.3390/ma10070813 doi (DE-627)DOAJ040296040 (DE-599)DOAJ1a56d01bc006496cab67af0ba7a4bffb DE-627 ger DE-627 rakwb eng TK1-9971 TA1-2040 QH201-278.5 QC120-168.85 Manuel Radek verfasserin aut Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion beam mixing in silicon (Si), germanium (Ge), and silicon germanium (SiGe) on the atomic structure of the sample, temperature, ion flux, and electrical doping by the implanted ions. The magnitude of mixing is determined by secondary ion mass spectrometry. Rutherford backscattering spectrometry in channeling geometry, Raman spectroscopy, and transmission electron microscopy provide information about the structural state after ion irradiation. Different temperature regimes with characteristic mixing properties are identified. A disparity in atomic mixing of Si and Ge becomes evident while SiGe shows an intermediate behavior. Overall, atomic mixing increases with temperature, and it is stronger in the amorphous than in the crystalline state. Ion-beam-induced mixing in Ge shows no dependence on doping by the implanted ions. In contrast, a doping effect is found in Si at higher temperature. Molecular dynamics simulations clearly show that ion beam mixing in Ge is mainly determined by the thermal spike mechanism. In the case of Si thermal spike, mixing prevails at low temperature whereas ion beam-induced enhanced self-diffusion dominates the atomic mixing at high temperature. The latter process is attributed to highly mobile Si di-interstitials formed under irradiation and during damage annealing. silicon germanium ion beam atomic mixing thermal spike radiation enhanced diffusion amorphization recrystallization molecular dynamics Technology T Electrical engineering. Electronics. Nuclear engineering Engineering (General). Civil engineering (General) Microscopy Descriptive and experimental mechanics Bartosz Liedke verfasserin aut Bernd Schmidt verfasserin aut Matthias Voelskow verfasserin aut Lothar Bischoff verfasserin aut John Lundsgaard Hansen verfasserin aut Arne Nylandsted Larsen verfasserin aut Dominique Bougeard verfasserin aut Roman Böttger verfasserin aut Slawomir Prucnal verfasserin aut Matthias Posselt verfasserin aut Hartmut Bracht verfasserin aut In Materials MDPI AG, 2009 10(2017), 7, p 813 (DE-627)595712649 (DE-600)2487261-1 19961944 nnns volume:10 year:2017 number:7, p 813 https://doi.org/10.3390/ma10070813 kostenfrei https://doaj.org/article/1a56d01bc006496cab67af0ba7a4bffb kostenfrei https://www.mdpi.com/1996-1944/10/7/813 kostenfrei https://doaj.org/toc/1996-1944 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2017 7, p 813
allfields_unstemmed	10.3390/ma10070813 doi (DE-627)DOAJ040296040 (DE-599)DOAJ1a56d01bc006496cab67af0ba7a4bffb DE-627 ger DE-627 rakwb eng TK1-9971 TA1-2040 QH201-278.5 QC120-168.85 Manuel Radek verfasserin aut Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion beam mixing in silicon (Si), germanium (Ge), and silicon germanium (SiGe) on the atomic structure of the sample, temperature, ion flux, and electrical doping by the implanted ions. The magnitude of mixing is determined by secondary ion mass spectrometry. Rutherford backscattering spectrometry in channeling geometry, Raman spectroscopy, and transmission electron microscopy provide information about the structural state after ion irradiation. Different temperature regimes with characteristic mixing properties are identified. A disparity in atomic mixing of Si and Ge becomes evident while SiGe shows an intermediate behavior. Overall, atomic mixing increases with temperature, and it is stronger in the amorphous than in the crystalline state. Ion-beam-induced mixing in Ge shows no dependence on doping by the implanted ions. In contrast, a doping effect is found in Si at higher temperature. Molecular dynamics simulations clearly show that ion beam mixing in Ge is mainly determined by the thermal spike mechanism. In the case of Si thermal spike, mixing prevails at low temperature whereas ion beam-induced enhanced self-diffusion dominates the atomic mixing at high temperature. The latter process is attributed to highly mobile Si di-interstitials formed under irradiation and during damage annealing. silicon germanium ion beam atomic mixing thermal spike radiation enhanced diffusion amorphization recrystallization molecular dynamics Technology T Electrical engineering. Electronics. Nuclear engineering Engineering (General). Civil engineering (General) Microscopy Descriptive and experimental mechanics Bartosz Liedke verfasserin aut Bernd Schmidt verfasserin aut Matthias Voelskow verfasserin aut Lothar Bischoff verfasserin aut John Lundsgaard Hansen verfasserin aut Arne Nylandsted Larsen verfasserin aut Dominique Bougeard verfasserin aut Roman Böttger verfasserin aut Slawomir Prucnal verfasserin aut Matthias Posselt verfasserin aut Hartmut Bracht verfasserin aut In Materials MDPI AG, 2009 10(2017), 7, p 813 (DE-627)595712649 (DE-600)2487261-1 19961944 nnns volume:10 year:2017 number:7, p 813 https://doi.org/10.3390/ma10070813 kostenfrei https://doaj.org/article/1a56d01bc006496cab67af0ba7a4bffb kostenfrei https://www.mdpi.com/1996-1944/10/7/813 kostenfrei https://doaj.org/toc/1996-1944 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2017 7, p 813
allfieldsGer	10.3390/ma10070813 doi (DE-627)DOAJ040296040 (DE-599)DOAJ1a56d01bc006496cab67af0ba7a4bffb DE-627 ger DE-627 rakwb eng TK1-9971 TA1-2040 QH201-278.5 QC120-168.85 Manuel Radek verfasserin aut Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion beam mixing in silicon (Si), germanium (Ge), and silicon germanium (SiGe) on the atomic structure of the sample, temperature, ion flux, and electrical doping by the implanted ions. The magnitude of mixing is determined by secondary ion mass spectrometry. Rutherford backscattering spectrometry in channeling geometry, Raman spectroscopy, and transmission electron microscopy provide information about the structural state after ion irradiation. Different temperature regimes with characteristic mixing properties are identified. A disparity in atomic mixing of Si and Ge becomes evident while SiGe shows an intermediate behavior. Overall, atomic mixing increases with temperature, and it is stronger in the amorphous than in the crystalline state. Ion-beam-induced mixing in Ge shows no dependence on doping by the implanted ions. In contrast, a doping effect is found in Si at higher temperature. Molecular dynamics simulations clearly show that ion beam mixing in Ge is mainly determined by the thermal spike mechanism. In the case of Si thermal spike, mixing prevails at low temperature whereas ion beam-induced enhanced self-diffusion dominates the atomic mixing at high temperature. The latter process is attributed to highly mobile Si di-interstitials formed under irradiation and during damage annealing. silicon germanium ion beam atomic mixing thermal spike radiation enhanced diffusion amorphization recrystallization molecular dynamics Technology T Electrical engineering. Electronics. Nuclear engineering Engineering (General). Civil engineering (General) Microscopy Descriptive and experimental mechanics Bartosz Liedke verfasserin aut Bernd Schmidt verfasserin aut Matthias Voelskow verfasserin aut Lothar Bischoff verfasserin aut John Lundsgaard Hansen verfasserin aut Arne Nylandsted Larsen verfasserin aut Dominique Bougeard verfasserin aut Roman Böttger verfasserin aut Slawomir Prucnal verfasserin aut Matthias Posselt verfasserin aut Hartmut Bracht verfasserin aut In Materials MDPI AG, 2009 10(2017), 7, p 813 (DE-627)595712649 (DE-600)2487261-1 19961944 nnns volume:10 year:2017 number:7, p 813 https://doi.org/10.3390/ma10070813 kostenfrei https://doaj.org/article/1a56d01bc006496cab67af0ba7a4bffb kostenfrei https://www.mdpi.com/1996-1944/10/7/813 kostenfrei https://doaj.org/toc/1996-1944 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2017 7, p 813
allfieldsSound	10.3390/ma10070813 doi (DE-627)DOAJ040296040 (DE-599)DOAJ1a56d01bc006496cab67af0ba7a4bffb DE-627 ger DE-627 rakwb eng TK1-9971 TA1-2040 QH201-278.5 QC120-168.85 Manuel Radek verfasserin aut Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion beam mixing in silicon (Si), germanium (Ge), and silicon germanium (SiGe) on the atomic structure of the sample, temperature, ion flux, and electrical doping by the implanted ions. The magnitude of mixing is determined by secondary ion mass spectrometry. Rutherford backscattering spectrometry in channeling geometry, Raman spectroscopy, and transmission electron microscopy provide information about the structural state after ion irradiation. Different temperature regimes with characteristic mixing properties are identified. A disparity in atomic mixing of Si and Ge becomes evident while SiGe shows an intermediate behavior. Overall, atomic mixing increases with temperature, and it is stronger in the amorphous than in the crystalline state. Ion-beam-induced mixing in Ge shows no dependence on doping by the implanted ions. In contrast, a doping effect is found in Si at higher temperature. Molecular dynamics simulations clearly show that ion beam mixing in Ge is mainly determined by the thermal spike mechanism. In the case of Si thermal spike, mixing prevails at low temperature whereas ion beam-induced enhanced self-diffusion dominates the atomic mixing at high temperature. The latter process is attributed to highly mobile Si di-interstitials formed under irradiation and during damage annealing. silicon germanium ion beam atomic mixing thermal spike radiation enhanced diffusion amorphization recrystallization molecular dynamics Technology T Electrical engineering. Electronics. Nuclear engineering Engineering (General). Civil engineering (General) Microscopy Descriptive and experimental mechanics Bartosz Liedke verfasserin aut Bernd Schmidt verfasserin aut Matthias Voelskow verfasserin aut Lothar Bischoff verfasserin aut John Lundsgaard Hansen verfasserin aut Arne Nylandsted Larsen verfasserin aut Dominique Bougeard verfasserin aut Roman Böttger verfasserin aut Slawomir Prucnal verfasserin aut Matthias Posselt verfasserin aut Hartmut Bracht verfasserin aut In Materials MDPI AG, 2009 10(2017), 7, p 813 (DE-627)595712649 (DE-600)2487261-1 19961944 nnns volume:10 year:2017 number:7, p 813 https://doi.org/10.3390/ma10070813 kostenfrei https://doaj.org/article/1a56d01bc006496cab67af0ba7a4bffb kostenfrei https://www.mdpi.com/1996-1944/10/7/813 kostenfrei https://doaj.org/toc/1996-1944 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2017 7, p 813
language	English
source	In Materials 10(2017), 7, p 813 volume:10 year:2017 number:7, p 813
sourceStr	In Materials 10(2017), 7, p 813 volume:10 year:2017 number:7, p 813
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	silicon germanium ion beam atomic mixing thermal spike radiation enhanced diffusion amorphization recrystallization molecular dynamics Technology T Electrical engineering. Electronics. Nuclear engineering Engineering (General). Civil engineering (General) Microscopy Descriptive and experimental mechanics
isfreeaccess_bool	true
container_title	Materials
authorswithroles_txt_mv	Manuel Radek @@aut@@ Bartosz Liedke @@aut@@ Bernd Schmidt @@aut@@ Matthias Voelskow @@aut@@ Lothar Bischoff @@aut@@ John Lundsgaard Hansen @@aut@@ Arne Nylandsted Larsen @@aut@@ Dominique Bougeard @@aut@@ Roman Böttger @@aut@@ Slawomir Prucnal @@aut@@ Matthias Posselt @@aut@@ Hartmut Bracht @@aut@@
publishDateDaySort_date	2017-01-01T00:00:00Z
hierarchy_top_id	595712649
id	DOAJ040296040
language_de	englisch
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callnumber-first	T - Technology
author	Manuel Radek
spellingShingle	Manuel Radek misc TK1-9971 misc TA1-2040 misc QH201-278.5 misc QC120-168.85 misc silicon misc germanium misc ion beam misc atomic mixing misc thermal spike misc radiation enhanced diffusion misc amorphization misc recrystallization misc molecular dynamics misc Technology misc T misc Electrical engineering. Electronics. Nuclear engineering misc Engineering (General). Civil engineering (General) misc Microscopy misc Descriptive and experimental mechanics Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures
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topic_title	TK1-9971 TA1-2040 QH201-278.5 QC120-168.85 Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures silicon germanium ion beam atomic mixing thermal spike radiation enhanced diffusion amorphization recrystallization molecular dynamics
topic	misc TK1-9971 misc TA1-2040 misc QH201-278.5 misc QC120-168.85 misc silicon misc germanium misc ion beam misc atomic mixing misc thermal spike misc radiation enhanced diffusion misc amorphization misc recrystallization misc molecular dynamics misc Technology misc T misc Electrical engineering. Electronics. Nuclear engineering misc Engineering (General). Civil engineering (General) misc Microscopy misc Descriptive and experimental mechanics
topic_unstemmed	misc TK1-9971 misc TA1-2040 misc QH201-278.5 misc QC120-168.85 misc silicon misc germanium misc ion beam misc atomic mixing misc thermal spike misc radiation enhanced diffusion misc amorphization misc recrystallization misc molecular dynamics misc Technology misc T misc Electrical engineering. Electronics. Nuclear engineering misc Engineering (General). Civil engineering (General) misc Microscopy misc Descriptive and experimental mechanics
topic_browse	misc TK1-9971 misc TA1-2040 misc QH201-278.5 misc QC120-168.85 misc silicon misc germanium misc ion beam misc atomic mixing misc thermal spike misc radiation enhanced diffusion misc amorphization misc recrystallization misc molecular dynamics misc Technology misc T misc Electrical engineering. Electronics. Nuclear engineering misc Engineering (General). Civil engineering (General) misc Microscopy misc Descriptive and experimental mechanics
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title	Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures
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title_full	Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures
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author_browse	Manuel Radek Bartosz Liedke Bernd Schmidt Matthias Voelskow Lothar Bischoff John Lundsgaard Hansen Arne Nylandsted Larsen Dominique Bougeard Roman Böttger Slawomir Prucnal Matthias Posselt Hartmut Bracht
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title_sort	ion-beam-induced atomic mixing in ge, si, and sige, studied by means of isotope multilayer structures
callnumber	TK1-9971
title_auth	Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures
abstract	Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion beam mixing in silicon (Si), germanium (Ge), and silicon germanium (SiGe) on the atomic structure of the sample, temperature, ion flux, and electrical doping by the implanted ions. The magnitude of mixing is determined by secondary ion mass spectrometry. Rutherford backscattering spectrometry in channeling geometry, Raman spectroscopy, and transmission electron microscopy provide information about the structural state after ion irradiation. Different temperature regimes with characteristic mixing properties are identified. A disparity in atomic mixing of Si and Ge becomes evident while SiGe shows an intermediate behavior. Overall, atomic mixing increases with temperature, and it is stronger in the amorphous than in the crystalline state. Ion-beam-induced mixing in Ge shows no dependence on doping by the implanted ions. In contrast, a doping effect is found in Si at higher temperature. Molecular dynamics simulations clearly show that ion beam mixing in Ge is mainly determined by the thermal spike mechanism. In the case of Si thermal spike, mixing prevails at low temperature whereas ion beam-induced enhanced self-diffusion dominates the atomic mixing at high temperature. The latter process is attributed to highly mobile Si di-interstitials formed under irradiation and during damage annealing.
abstractGer	Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion beam mixing in silicon (Si), germanium (Ge), and silicon germanium (SiGe) on the atomic structure of the sample, temperature, ion flux, and electrical doping by the implanted ions. The magnitude of mixing is determined by secondary ion mass spectrometry. Rutherford backscattering spectrometry in channeling geometry, Raman spectroscopy, and transmission electron microscopy provide information about the structural state after ion irradiation. Different temperature regimes with characteristic mixing properties are identified. A disparity in atomic mixing of Si and Ge becomes evident while SiGe shows an intermediate behavior. Overall, atomic mixing increases with temperature, and it is stronger in the amorphous than in the crystalline state. Ion-beam-induced mixing in Ge shows no dependence on doping by the implanted ions. In contrast, a doping effect is found in Si at higher temperature. Molecular dynamics simulations clearly show that ion beam mixing in Ge is mainly determined by the thermal spike mechanism. In the case of Si thermal spike, mixing prevails at low temperature whereas ion beam-induced enhanced self-diffusion dominates the atomic mixing at high temperature. The latter process is attributed to highly mobile Si di-interstitials formed under irradiation and during damage annealing.
abstract_unstemmed	Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion beam mixing in silicon (Si), germanium (Ge), and silicon germanium (SiGe) on the atomic structure of the sample, temperature, ion flux, and electrical doping by the implanted ions. The magnitude of mixing is determined by secondary ion mass spectrometry. Rutherford backscattering spectrometry in channeling geometry, Raman spectroscopy, and transmission electron microscopy provide information about the structural state after ion irradiation. Different temperature regimes with characteristic mixing properties are identified. A disparity in atomic mixing of Si and Ge becomes evident while SiGe shows an intermediate behavior. Overall, atomic mixing increases with temperature, and it is stronger in the amorphous than in the crystalline state. Ion-beam-induced mixing in Ge shows no dependence on doping by the implanted ions. In contrast, a doping effect is found in Si at higher temperature. Molecular dynamics simulations clearly show that ion beam mixing in Ge is mainly determined by the thermal spike mechanism. In the case of Si thermal spike, mixing prevails at low temperature whereas ion beam-induced enhanced self-diffusion dominates the atomic mixing at high temperature. The latter process is attributed to highly mobile Si di-interstitials formed under irradiation and during damage annealing.
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title_short	Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures
url	https://doi.org/10.3390/ma10070813 https://doaj.org/article/1a56d01bc006496cab67af0ba7a4bffb https://www.mdpi.com/1996-1944/10/7/813 https://doaj.org/toc/1996-1944
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Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures

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