THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS

Tungsten carbide (WC/C) layers are often researched due to their outstanding mechanical and tribological properties. Here, optimized indented hardness (HIT), indentation modulus (EIT) and coefficient of friction (COF) values were measured to study the effect of pressure and bias voltage on WC/C laye...
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Gespeichert in:

Autor*in:	Peter Hornak [verfasserIn] Daniel Kottfer [verfasserIn] Kaczmarek Lukasz [verfasserIn] Kianicova Marta [verfasserIn] Balko Jan [verfasserIn] Rehak Frantisek [verfasserIn] Pekarcikova Miriam [verfasserIn] Ciznar Peter [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2017

Schlagwörter:	WC/C layer DC magnetron sputtering N₂+SiH₄ Annealing Properties

Übergeordnetes Werk:	In: Ceramics-Silikáty - University of Chemistry and Technology, Prague, 2005, 62(2017), 1, Seite 97-107
Übergeordnetes Werk:	volume:62 ; year:2017 ; number:1 ; pages:97-107

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc Journal toc

DOI / URN:	10.13168/cs.2018.0001

Katalog-ID:	DOAJ040745392

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authorswithroles_txt_mv	Peter Hornak @@aut@@ Daniel Kottfer @@aut@@ Kaczmarek Lukasz @@aut@@ Kianicova Marta @@aut@@ Balko Jan @@aut@@ Rehak Frantisek @@aut@@ Pekarcikova Miriam @@aut@@ Ciznar Peter @@aut@@
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callnumber-first	T - Technology
author	Peter Hornak
spellingShingle	Peter Hornak misc TP785-869 misc WC/C layer misc DC magnetron sputtering misc N₂+SiH₄ misc Annealing misc Properties misc Clay industries. Ceramics. Glass THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS
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topic_title	TP785-869 THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS WC/C layer DC magnetron sputtering N₂+SiH₄ Annealing Properties
topic	misc TP785-869 misc WC/C layer misc DC magnetron sputtering misc N₂+SiH₄ misc Annealing misc Properties misc Clay industries. Ceramics. Glass
topic_unstemmed	misc TP785-869 misc WC/C layer misc DC magnetron sputtering misc N₂+SiH₄ misc Annealing misc Properties misc Clay industries. Ceramics. Glass
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title	THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS
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title_full	THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS
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title_sort	effect of pressure, bias voltage and annealing temperature on n₂ and n₂+sih₄ doped wc/c dc magnetron sputtered layers
callnumber	TP785-869
title_auth	THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS
abstract	Tungsten carbide (WC/C) layers are often researched due to their outstanding mechanical and tribological properties. Here, optimized indented hardness (HIT), indentation modulus (EIT) and coefficient of friction (COF) values were measured to study the effect of pressure and bias voltage on WC/C layers, deposited on Si by DC magnetron spluttering. Maximal values of HIT=37.2±4.8 GPa, EIT=447±28 GPa and COF=0.64±0.09 were obtained. Additionally, the effect of temperature on optimized layers deposited with and without N₂ and N₂+SiH₄ annealed at 200 °C, 500 °C and 800 °C, were also investigated. The values of HIT, EIT and COF and, observed morphology and structural composition of these contaminated and non-contaminated WC/C layers were evaluated. It was found that layer degradation occurred at different rates depending on the temperature and gas mixture used during the annealing and deposition process, respectively.
abstractGer	Tungsten carbide (WC/C) layers are often researched due to their outstanding mechanical and tribological properties. Here, optimized indented hardness (HIT), indentation modulus (EIT) and coefficient of friction (COF) values were measured to study the effect of pressure and bias voltage on WC/C layers, deposited on Si by DC magnetron spluttering. Maximal values of HIT=37.2±4.8 GPa, EIT=447±28 GPa and COF=0.64±0.09 were obtained. Additionally, the effect of temperature on optimized layers deposited with and without N₂ and N₂+SiH₄ annealed at 200 °C, 500 °C and 800 °C, were also investigated. The values of HIT, EIT and COF and, observed morphology and structural composition of these contaminated and non-contaminated WC/C layers were evaluated. It was found that layer degradation occurred at different rates depending on the temperature and gas mixture used during the annealing and deposition process, respectively.
abstract_unstemmed	Tungsten carbide (WC/C) layers are often researched due to their outstanding mechanical and tribological properties. Here, optimized indented hardness (HIT), indentation modulus (EIT) and coefficient of friction (COF) values were measured to study the effect of pressure and bias voltage on WC/C layers, deposited on Si by DC magnetron spluttering. Maximal values of HIT=37.2±4.8 GPa, EIT=447±28 GPa and COF=0.64±0.09 were obtained. Additionally, the effect of temperature on optimized layers deposited with and without N₂ and N₂+SiH₄ annealed at 200 °C, 500 °C and 800 °C, were also investigated. The values of HIT, EIT and COF and, observed morphology and structural composition of these contaminated and non-contaminated WC/C layers were evaluated. It was found that layer degradation occurred at different rates depending on the temperature and gas mixture used during the annealing and deposition process, respectively.
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title_short	THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS
url	https://doi.org/10.13168/cs.2018.0001 https://doaj.org/article/aa1abc3d7c7943019d2aeac098f0bc9c http://www.ceramics-silikaty.cz/index.php?page=cs_detail_doi&id=1158 https://doaj.org/toc/0862-5468 https://doaj.org/toc/1804-5847
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author2	Daniel Kottfer Kaczmarek Lukasz Kianicova Marta Balko Jan Rehak Frantisek Pekarcikova Miriam Ciznar Peter
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up_date	2024-07-03T16:31:33.003Z
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THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS

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