THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS
Tungsten carbide (WC/C) layers are often researched due to their outstanding mechanical and tribological properties. Here, optimized indented hardness (HIT), indentation modulus (EIT) and coefficient of friction (COF) values were measured to study the effect of pressure and bias voltage on WC/C laye...
Ausführliche Beschreibung
Autor*in: |
Peter Hornak [verfasserIn] Daniel Kottfer [verfasserIn] Kaczmarek Lukasz [verfasserIn] Kianicova Marta [verfasserIn] Balko Jan [verfasserIn] Rehak Frantisek [verfasserIn] Pekarcikova Miriam [verfasserIn] Ciznar Peter [verfasserIn] |
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E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2017 |
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Schlagwörter: |
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Übergeordnetes Werk: |
In: Ceramics-Silikáty - University of Chemistry and Technology, Prague, 2005, 62(2017), 1, Seite 97-107 |
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Übergeordnetes Werk: |
volume:62 ; year:2017 ; number:1 ; pages:97-107 |
Links: |
Link aufrufen |
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DOI / URN: |
10.13168/cs.2018.0001 |
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Katalog-ID: |
DOAJ040745392 |
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10.13168/cs.2018.0001 doi (DE-627)DOAJ040745392 (DE-599)DOAJaa1abc3d7c7943019d2aeac098f0bc9c DE-627 ger DE-627 rakwb eng TP785-869 Peter Hornak verfasserin aut THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Tungsten carbide (WC/C) layers are often researched due to their outstanding mechanical and tribological properties. Here, optimized indented hardness (HIT), indentation modulus (EIT) and coefficient of friction (COF) values were measured to study the effect of pressure and bias voltage on WC/C layers, deposited on Si by DC magnetron spluttering. Maximal values of HIT=37.2±4.8 GPa, EIT=447±28 GPa and COF=0.64±0.09 were obtained. Additionally, the effect of temperature on optimized layers deposited with and without N₂ and N₂+SiH₄ annealed at 200 °C, 500 °C and 800 °C, were also investigated. The values of HIT, EIT and COF and, observed morphology and structural composition of these contaminated and non-contaminated WC/C layers were evaluated. It was found that layer degradation occurred at different rates depending on the temperature and gas mixture used during the annealing and deposition process, respectively. WC/C layer DC magnetron sputtering N₂+SiH₄ Annealing Properties Clay industries. Ceramics. Glass Daniel Kottfer verfasserin aut Kaczmarek Lukasz verfasserin aut Kianicova Marta verfasserin aut Balko Jan verfasserin aut Rehak Frantisek verfasserin aut Pekarcikova Miriam verfasserin aut Ciznar Peter verfasserin aut In Ceramics-Silikáty University of Chemistry and Technology, Prague, 2005 62(2017), 1, Seite 97-107 (DE-627)336453655 (DE-600)2061184-5 18045847 nnns volume:62 year:2017 number:1 pages:97-107 https://doi.org/10.13168/cs.2018.0001 kostenfrei https://doaj.org/article/aa1abc3d7c7943019d2aeac098f0bc9c kostenfrei http://www.ceramics-silikaty.cz/index.php?page=cs_detail_doi&id=1158 kostenfrei https://doaj.org/toc/0862-5468 Journal toc kostenfrei https://doaj.org/toc/1804-5847 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 62 2017 1 97-107 |
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TP785-869 THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS WC/C layer DC magnetron sputtering N₂+SiH₄ Annealing Properties |
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THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS |
abstract |
Tungsten carbide (WC/C) layers are often researched due to their outstanding mechanical and tribological properties. Here, optimized indented hardness (HIT), indentation modulus (EIT) and coefficient of friction (COF) values were measured to study the effect of pressure and bias voltage on WC/C layers, deposited on Si by DC magnetron spluttering. Maximal values of HIT=37.2±4.8 GPa, EIT=447±28 GPa and COF=0.64±0.09 were obtained. Additionally, the effect of temperature on optimized layers deposited with and without N₂ and N₂+SiH₄ annealed at 200 °C, 500 °C and 800 °C, were also investigated. The values of HIT, EIT and COF and, observed morphology and structural composition of these contaminated and non-contaminated WC/C layers were evaluated. It was found that layer degradation occurred at different rates depending on the temperature and gas mixture used during the annealing and deposition process, respectively. |
abstractGer |
Tungsten carbide (WC/C) layers are often researched due to their outstanding mechanical and tribological properties. Here, optimized indented hardness (HIT), indentation modulus (EIT) and coefficient of friction (COF) values were measured to study the effect of pressure and bias voltage on WC/C layers, deposited on Si by DC magnetron spluttering. Maximal values of HIT=37.2±4.8 GPa, EIT=447±28 GPa and COF=0.64±0.09 were obtained. Additionally, the effect of temperature on optimized layers deposited with and without N₂ and N₂+SiH₄ annealed at 200 °C, 500 °C and 800 °C, were also investigated. The values of HIT, EIT and COF and, observed morphology and structural composition of these contaminated and non-contaminated WC/C layers were evaluated. It was found that layer degradation occurred at different rates depending on the temperature and gas mixture used during the annealing and deposition process, respectively. |
abstract_unstemmed |
Tungsten carbide (WC/C) layers are often researched due to their outstanding mechanical and tribological properties. Here, optimized indented hardness (HIT), indentation modulus (EIT) and coefficient of friction (COF) values were measured to study the effect of pressure and bias voltage on WC/C layers, deposited on Si by DC magnetron spluttering. Maximal values of HIT=37.2±4.8 GPa, EIT=447±28 GPa and COF=0.64±0.09 were obtained. Additionally, the effect of temperature on optimized layers deposited with and without N₂ and N₂+SiH₄ annealed at 200 °C, 500 °C and 800 °C, were also investigated. The values of HIT, EIT and COF and, observed morphology and structural composition of these contaminated and non-contaminated WC/C layers were evaluated. It was found that layer degradation occurred at different rates depending on the temperature and gas mixture used during the annealing and deposition process, respectively. |
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THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS |
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