Preparation of a Vertical Graphene-Based Pressure Sensor Using PECVD at a Low Temperature

Flexible pressure sensors have received much attention due to their widespread potential applications in electronic skins, health monitoring, and human–machine interfaces. Graphene and its derivatives hold great promise for two-dimensional sensing materials, owing to their superior properties, such...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Xin Cao [verfasserIn] Kunpeng Zhang [verfasserIn] Guang Feng [verfasserIn] Quan Wang [verfasserIn] Peihong Fu [verfasserIn] Fengping Li [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2022

Schlagwörter:	flexible pressure vertical graphene (VG) sensor

Übergeordnetes Werk:	In: Micromachines - MDPI AG, 2010, 13(2022), 5, p 681
Übergeordnetes Werk:	volume:13 ; year:2022 ; number:5, p 681

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/mi13050681

Katalog-ID:	DOAJ041686934

Internformat


LEADER	01000caa a22002652 4500
001	DOAJ041686934
003	DE-627
005	20240414220140.0
007	cr uuu---uuuuu
008	230227s2022 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.3390/mi13050681 \|2 doi
035			\|a (DE-627)DOAJ041686934
035			\|a (DE-599)DOAJ784d56e22dd348e8b190483fd86e894a
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
050		0	\|a TJ1-1570
100	0		\|a Xin Cao \|e verfasserin \|4 aut
245	1	0	\|a Preparation of a Vertical Graphene-Based Pressure Sensor Using PECVD at a Low Temperature
264		1	\|c 2022
336			\|a Text \|b txt \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
520			\|a Flexible pressure sensors have received much attention due to their widespread potential applications in electronic skins, health monitoring, and human–machine interfaces. Graphene and its derivatives hold great promise for two-dimensional sensing materials, owing to their superior properties, such as atomically thin, transparent, and flexible structure. The high performance of most graphene-based pressure piezoresistive sensors relies excessively on the preparation of complex, post-growth transfer processes. However, the majority of dielectric substrates cannot hold in high temperatures, which can induce contamination and structural defects. Herein, a credibility strategy is reported for directly growing high-quality vertical graphene (VG) on a flexible and stretchable mica paper dielectric substrate with individual interdigital electrodes in plasma-enhanced chemical vapor deposition (PECVD), which assists in inducing electric field, resulting in a flexible, touchable pressure sensor with low power consumption and portability. Benefitting from its vertically directed graphene microstructure, the graphene-based sensor shows superior properties of high sensitivity (4.84 KPa<sup<−1</sup<) and a maximum pressure range of 120 KPa, as well as strong stability (5000 cycles), which makes it possible to detect small pulse pressure and provide options for preparation of pressure sensors in the future.
650		4	\|a flexible
650		4	\|a pressure
650		4	\|a vertical graphene (VG)
650		4	\|a sensor
653		0	\|a Mechanical engineering and machinery
700	0		\|a Kunpeng Zhang \|e verfasserin \|4 aut
700	0		\|a Guang Feng \|e verfasserin \|4 aut
700	0		\|a Quan Wang \|e verfasserin \|4 aut
700	0		\|a Peihong Fu \|e verfasserin \|4 aut
700	0		\|a Fengping Li \|e verfasserin \|4 aut
773	0	8	\|i In \|t Micromachines \|d MDPI AG, 2010 \|g 13(2022), 5, p 681 \|w (DE-627)665016069 \|w (DE-600)2620864-7 \|x 2072666X \|7 nnns
773	1	8	\|g volume:13 \|g year:2022 \|g number:5, p 681
856	4	0	\|u https://doi.org/10.3390/mi13050681 \|z kostenfrei
856	4	0	\|u https://doaj.org/article/784d56e22dd348e8b190483fd86e894a \|z kostenfrei
856	4	0	\|u https://www.mdpi.com/2072-666X/13/5/681 \|z kostenfrei
856	4	2	\|u https://doaj.org/toc/2072-666X \|y Journal toc \|z kostenfrei
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_DOAJ
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_39
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_95
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_151
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_213
912			\|a GBV_ILN_230
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_4012
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4367
912			\|a GBV_ILN_4700
951			\|a AR
952			\|d 13 \|j 2022 \|e 5, p 681

Indexfelder

author_variant	x c xc k z kz g f gf q w qw p f pf f l fl
matchkey_str	article:2072666X:2022----::rprtooaetclrpeeaepesrsnouige
hierarchy_sort_str	2022
callnumber-subject-code	TJ
publishDate	2022
allfields	10.3390/mi13050681 doi (DE-627)DOAJ041686934 (DE-599)DOAJ784d56e22dd348e8b190483fd86e894a DE-627 ger DE-627 rakwb eng TJ1-1570 Xin Cao verfasserin aut Preparation of a Vertical Graphene-Based Pressure Sensor Using PECVD at a Low Temperature 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Flexible pressure sensors have received much attention due to their widespread potential applications in electronic skins, health monitoring, and human–machine interfaces. Graphene and its derivatives hold great promise for two-dimensional sensing materials, owing to their superior properties, such as atomically thin, transparent, and flexible structure. The high performance of most graphene-based pressure piezoresistive sensors relies excessively on the preparation of complex, post-growth transfer processes. However, the majority of dielectric substrates cannot hold in high temperatures, which can induce contamination and structural defects. Herein, a credibility strategy is reported for directly growing high-quality vertical graphene (VG) on a flexible and stretchable mica paper dielectric substrate with individual interdigital electrodes in plasma-enhanced chemical vapor deposition (PECVD), which assists in inducing electric field, resulting in a flexible, touchable pressure sensor with low power consumption and portability. Benefitting from its vertically directed graphene microstructure, the graphene-based sensor shows superior properties of high sensitivity (4.84 KPa<sup<−1</sup<) and a maximum pressure range of 120 KPa, as well as strong stability (5000 cycles), which makes it possible to detect small pulse pressure and provide options for preparation of pressure sensors in the future. flexible pressure vertical graphene (VG) sensor Mechanical engineering and machinery Kunpeng Zhang verfasserin aut Guang Feng verfasserin aut Quan Wang verfasserin aut Peihong Fu verfasserin aut Fengping Li verfasserin aut In Micromachines MDPI AG, 2010 13(2022), 5, p 681 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:13 year:2022 number:5, p 681 https://doi.org/10.3390/mi13050681 kostenfrei https://doaj.org/article/784d56e22dd348e8b190483fd86e894a kostenfrei https://www.mdpi.com/2072-666X/13/5/681 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2022 5, p 681
spelling	10.3390/mi13050681 doi (DE-627)DOAJ041686934 (DE-599)DOAJ784d56e22dd348e8b190483fd86e894a DE-627 ger DE-627 rakwb eng TJ1-1570 Xin Cao verfasserin aut Preparation of a Vertical Graphene-Based Pressure Sensor Using PECVD at a Low Temperature 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Flexible pressure sensors have received much attention due to their widespread potential applications in electronic skins, health monitoring, and human–machine interfaces. Graphene and its derivatives hold great promise for two-dimensional sensing materials, owing to their superior properties, such as atomically thin, transparent, and flexible structure. The high performance of most graphene-based pressure piezoresistive sensors relies excessively on the preparation of complex, post-growth transfer processes. However, the majority of dielectric substrates cannot hold in high temperatures, which can induce contamination and structural defects. Herein, a credibility strategy is reported for directly growing high-quality vertical graphene (VG) on a flexible and stretchable mica paper dielectric substrate with individual interdigital electrodes in plasma-enhanced chemical vapor deposition (PECVD), which assists in inducing electric field, resulting in a flexible, touchable pressure sensor with low power consumption and portability. Benefitting from its vertically directed graphene microstructure, the graphene-based sensor shows superior properties of high sensitivity (4.84 KPa<sup<−1</sup<) and a maximum pressure range of 120 KPa, as well as strong stability (5000 cycles), which makes it possible to detect small pulse pressure and provide options for preparation of pressure sensors in the future. flexible pressure vertical graphene (VG) sensor Mechanical engineering and machinery Kunpeng Zhang verfasserin aut Guang Feng verfasserin aut Quan Wang verfasserin aut Peihong Fu verfasserin aut Fengping Li verfasserin aut In Micromachines MDPI AG, 2010 13(2022), 5, p 681 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:13 year:2022 number:5, p 681 https://doi.org/10.3390/mi13050681 kostenfrei https://doaj.org/article/784d56e22dd348e8b190483fd86e894a kostenfrei https://www.mdpi.com/2072-666X/13/5/681 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2022 5, p 681
allfields_unstemmed	10.3390/mi13050681 doi (DE-627)DOAJ041686934 (DE-599)DOAJ784d56e22dd348e8b190483fd86e894a DE-627 ger DE-627 rakwb eng TJ1-1570 Xin Cao verfasserin aut Preparation of a Vertical Graphene-Based Pressure Sensor Using PECVD at a Low Temperature 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Flexible pressure sensors have received much attention due to their widespread potential applications in electronic skins, health monitoring, and human–machine interfaces. Graphene and its derivatives hold great promise for two-dimensional sensing materials, owing to their superior properties, such as atomically thin, transparent, and flexible structure. The high performance of most graphene-based pressure piezoresistive sensors relies excessively on the preparation of complex, post-growth transfer processes. However, the majority of dielectric substrates cannot hold in high temperatures, which can induce contamination and structural defects. Herein, a credibility strategy is reported for directly growing high-quality vertical graphene (VG) on a flexible and stretchable mica paper dielectric substrate with individual interdigital electrodes in plasma-enhanced chemical vapor deposition (PECVD), which assists in inducing electric field, resulting in a flexible, touchable pressure sensor with low power consumption and portability. Benefitting from its vertically directed graphene microstructure, the graphene-based sensor shows superior properties of high sensitivity (4.84 KPa<sup<−1</sup<) and a maximum pressure range of 120 KPa, as well as strong stability (5000 cycles), which makes it possible to detect small pulse pressure and provide options for preparation of pressure sensors in the future. flexible pressure vertical graphene (VG) sensor Mechanical engineering and machinery Kunpeng Zhang verfasserin aut Guang Feng verfasserin aut Quan Wang verfasserin aut Peihong Fu verfasserin aut Fengping Li verfasserin aut In Micromachines MDPI AG, 2010 13(2022), 5, p 681 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:13 year:2022 number:5, p 681 https://doi.org/10.3390/mi13050681 kostenfrei https://doaj.org/article/784d56e22dd348e8b190483fd86e894a kostenfrei https://www.mdpi.com/2072-666X/13/5/681 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2022 5, p 681
allfieldsGer	10.3390/mi13050681 doi (DE-627)DOAJ041686934 (DE-599)DOAJ784d56e22dd348e8b190483fd86e894a DE-627 ger DE-627 rakwb eng TJ1-1570 Xin Cao verfasserin aut Preparation of a Vertical Graphene-Based Pressure Sensor Using PECVD at a Low Temperature 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Flexible pressure sensors have received much attention due to their widespread potential applications in electronic skins, health monitoring, and human–machine interfaces. Graphene and its derivatives hold great promise for two-dimensional sensing materials, owing to their superior properties, such as atomically thin, transparent, and flexible structure. The high performance of most graphene-based pressure piezoresistive sensors relies excessively on the preparation of complex, post-growth transfer processes. However, the majority of dielectric substrates cannot hold in high temperatures, which can induce contamination and structural defects. Herein, a credibility strategy is reported for directly growing high-quality vertical graphene (VG) on a flexible and stretchable mica paper dielectric substrate with individual interdigital electrodes in plasma-enhanced chemical vapor deposition (PECVD), which assists in inducing electric field, resulting in a flexible, touchable pressure sensor with low power consumption and portability. Benefitting from its vertically directed graphene microstructure, the graphene-based sensor shows superior properties of high sensitivity (4.84 KPa<sup<−1</sup<) and a maximum pressure range of 120 KPa, as well as strong stability (5000 cycles), which makes it possible to detect small pulse pressure and provide options for preparation of pressure sensors in the future. flexible pressure vertical graphene (VG) sensor Mechanical engineering and machinery Kunpeng Zhang verfasserin aut Guang Feng verfasserin aut Quan Wang verfasserin aut Peihong Fu verfasserin aut Fengping Li verfasserin aut In Micromachines MDPI AG, 2010 13(2022), 5, p 681 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:13 year:2022 number:5, p 681 https://doi.org/10.3390/mi13050681 kostenfrei https://doaj.org/article/784d56e22dd348e8b190483fd86e894a kostenfrei https://www.mdpi.com/2072-666X/13/5/681 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2022 5, p 681
allfieldsSound	10.3390/mi13050681 doi (DE-627)DOAJ041686934 (DE-599)DOAJ784d56e22dd348e8b190483fd86e894a DE-627 ger DE-627 rakwb eng TJ1-1570 Xin Cao verfasserin aut Preparation of a Vertical Graphene-Based Pressure Sensor Using PECVD at a Low Temperature 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Flexible pressure sensors have received much attention due to their widespread potential applications in electronic skins, health monitoring, and human–machine interfaces. Graphene and its derivatives hold great promise for two-dimensional sensing materials, owing to their superior properties, such as atomically thin, transparent, and flexible structure. The high performance of most graphene-based pressure piezoresistive sensors relies excessively on the preparation of complex, post-growth transfer processes. However, the majority of dielectric substrates cannot hold in high temperatures, which can induce contamination and structural defects. Herein, a credibility strategy is reported for directly growing high-quality vertical graphene (VG) on a flexible and stretchable mica paper dielectric substrate with individual interdigital electrodes in plasma-enhanced chemical vapor deposition (PECVD), which assists in inducing electric field, resulting in a flexible, touchable pressure sensor with low power consumption and portability. Benefitting from its vertically directed graphene microstructure, the graphene-based sensor shows superior properties of high sensitivity (4.84 KPa<sup<−1</sup<) and a maximum pressure range of 120 KPa, as well as strong stability (5000 cycles), which makes it possible to detect small pulse pressure and provide options for preparation of pressure sensors in the future. flexible pressure vertical graphene (VG) sensor Mechanical engineering and machinery Kunpeng Zhang verfasserin aut Guang Feng verfasserin aut Quan Wang verfasserin aut Peihong Fu verfasserin aut Fengping Li verfasserin aut In Micromachines MDPI AG, 2010 13(2022), 5, p 681 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:13 year:2022 number:5, p 681 https://doi.org/10.3390/mi13050681 kostenfrei https://doaj.org/article/784d56e22dd348e8b190483fd86e894a kostenfrei https://www.mdpi.com/2072-666X/13/5/681 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2022 5, p 681
language	English
source	In Micromachines 13(2022), 5, p 681 volume:13 year:2022 number:5, p 681
sourceStr	In Micromachines 13(2022), 5, p 681 volume:13 year:2022 number:5, p 681
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	flexible pressure vertical graphene (VG) sensor Mechanical engineering and machinery
isfreeaccess_bool	true
container_title	Micromachines
authorswithroles_txt_mv	Xin Cao @@aut@@ Kunpeng Zhang @@aut@@ Guang Feng @@aut@@ Quan Wang @@aut@@ Peihong Fu @@aut@@ Fengping Li @@aut@@
publishDateDaySort_date	2022-01-01T00:00:00Z
hierarchy_top_id	665016069
id	DOAJ041686934
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ041686934</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20240414220140.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230227s2022 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.3390/mi13050681</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ041686934</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJ784d56e22dd348e8b190483fd86e894a</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TJ1-1570</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Xin Cao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Preparation of a Vertical Graphene-Based Pressure Sensor Using PECVD at a Low Temperature</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2022</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Flexible pressure sensors have received much attention due to their widespread potential applications in electronic skins, health monitoring, and human–machine interfaces. Graphene and its derivatives hold great promise for two-dimensional sensing materials, owing to their superior properties, such as atomically thin, transparent, and flexible structure. The high performance of most graphene-based pressure piezoresistive sensors relies excessively on the preparation of complex, post-growth transfer processes. However, the majority of dielectric substrates cannot hold in high temperatures, which can induce contamination and structural defects. Herein, a credibility strategy is reported for directly growing high-quality vertical graphene (VG) on a flexible and stretchable mica paper dielectric substrate with individual interdigital electrodes in plasma-enhanced chemical vapor deposition (PECVD), which assists in inducing electric field, resulting in a flexible, touchable pressure sensor with low power consumption and portability. Benefitting from its vertically directed graphene microstructure, the graphene-based sensor shows superior properties of high sensitivity (4.84 KPa<sup<−1</sup<) and a maximum pressure range of 120 KPa, as well as strong stability (5000 cycles), which makes it possible to detect small pulse pressure and provide options for preparation of pressure sensors in the future.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">flexible</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">pressure</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">vertical graphene (VG)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">sensor</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Mechanical engineering and machinery</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Kunpeng Zhang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Guang Feng</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Quan Wang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Peihong Fu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Fengping Li</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">Micromachines</subfield><subfield code="d">MDPI AG, 2010</subfield><subfield code="g">13(2022), 5, p 681</subfield><subfield code="w">(DE-627)665016069</subfield><subfield code="w">(DE-600)2620864-7</subfield><subfield code="x">2072666X</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:13</subfield><subfield code="g">year:2022</subfield><subfield code="g">number:5, p 681</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.3390/mi13050681</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/784d56e22dd348e8b190483fd86e894a</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://www.mdpi.com/2072-666X/13/5/681</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2072-666X</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">13</subfield><subfield code="j">2022</subfield><subfield code="e">5, p 681</subfield></datafield></record></collection>
callnumber-first	T - Technology
author	Xin Cao
spellingShingle	Xin Cao misc TJ1-1570 misc flexible misc pressure misc vertical graphene (VG) misc sensor misc Mechanical engineering and machinery Preparation of a Vertical Graphene-Based Pressure Sensor Using PECVD at a Low Temperature
authorStr	Xin Cao
ppnlink_with_tag_str_mv	@@773@@(DE-627)665016069
format	electronic Article
delete_txt_mv	keep
author_role	aut aut aut aut aut aut
collection	DOAJ
remote_str	true
callnumber-label	TJ1-1570
illustrated	Not Illustrated
issn	2072666X
topic_title	TJ1-1570 Preparation of a Vertical Graphene-Based Pressure Sensor Using PECVD at a Low Temperature flexible pressure vertical graphene (VG) sensor
topic	misc TJ1-1570 misc flexible misc pressure misc vertical graphene (VG) misc sensor misc Mechanical engineering and machinery
topic_unstemmed	misc TJ1-1570 misc flexible misc pressure misc vertical graphene (VG) misc sensor misc Mechanical engineering and machinery
topic_browse	misc TJ1-1570 misc flexible misc pressure misc vertical graphene (VG) misc sensor misc Mechanical engineering and machinery
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	cr
hierarchy_parent_title	Micromachines
hierarchy_parent_id	665016069
hierarchy_top_title	Micromachines
isfreeaccess_txt	true
familylinks_str_mv	(DE-627)665016069 (DE-600)2620864-7
title	Preparation of a Vertical Graphene-Based Pressure Sensor Using PECVD at a Low Temperature
ctrlnum	(DE-627)DOAJ041686934 (DE-599)DOAJ784d56e22dd348e8b190483fd86e894a
title_full	Preparation of a Vertical Graphene-Based Pressure Sensor Using PECVD at a Low Temperature
author_sort	Xin Cao
journal	Micromachines
journalStr	Micromachines
callnumber-first-code	T
lang_code	eng
isOA_bool	true
recordtype	marc
publishDateSort	2022
contenttype_str_mv	txt
author_browse	Xin Cao Kunpeng Zhang Guang Feng Quan Wang Peihong Fu Fengping Li
container_volume	13
class	TJ1-1570
format_se	Elektronische Aufsätze
author-letter	Xin Cao
doi_str_mv	10.3390/mi13050681
author2-role	verfasserin
title_sort	preparation of a vertical graphene-based pressure sensor using pecvd at a low temperature
callnumber	TJ1-1570
title_auth	Preparation of a Vertical Graphene-Based Pressure Sensor Using PECVD at a Low Temperature
abstract	Flexible pressure sensors have received much attention due to their widespread potential applications in electronic skins, health monitoring, and human–machine interfaces. Graphene and its derivatives hold great promise for two-dimensional sensing materials, owing to their superior properties, such as atomically thin, transparent, and flexible structure. The high performance of most graphene-based pressure piezoresistive sensors relies excessively on the preparation of complex, post-growth transfer processes. However, the majority of dielectric substrates cannot hold in high temperatures, which can induce contamination and structural defects. Herein, a credibility strategy is reported for directly growing high-quality vertical graphene (VG) on a flexible and stretchable mica paper dielectric substrate with individual interdigital electrodes in plasma-enhanced chemical vapor deposition (PECVD), which assists in inducing electric field, resulting in a flexible, touchable pressure sensor with low power consumption and portability. Benefitting from its vertically directed graphene microstructure, the graphene-based sensor shows superior properties of high sensitivity (4.84 KPa<sup<−1</sup<) and a maximum pressure range of 120 KPa, as well as strong stability (5000 cycles), which makes it possible to detect small pulse pressure and provide options for preparation of pressure sensors in the future.
abstractGer	Flexible pressure sensors have received much attention due to their widespread potential applications in electronic skins, health monitoring, and human–machine interfaces. Graphene and its derivatives hold great promise for two-dimensional sensing materials, owing to their superior properties, such as atomically thin, transparent, and flexible structure. The high performance of most graphene-based pressure piezoresistive sensors relies excessively on the preparation of complex, post-growth transfer processes. However, the majority of dielectric substrates cannot hold in high temperatures, which can induce contamination and structural defects. Herein, a credibility strategy is reported for directly growing high-quality vertical graphene (VG) on a flexible and stretchable mica paper dielectric substrate with individual interdigital electrodes in plasma-enhanced chemical vapor deposition (PECVD), which assists in inducing electric field, resulting in a flexible, touchable pressure sensor with low power consumption and portability. Benefitting from its vertically directed graphene microstructure, the graphene-based sensor shows superior properties of high sensitivity (4.84 KPa<sup<−1</sup<) and a maximum pressure range of 120 KPa, as well as strong stability (5000 cycles), which makes it possible to detect small pulse pressure and provide options for preparation of pressure sensors in the future.
abstract_unstemmed	Flexible pressure sensors have received much attention due to their widespread potential applications in electronic skins, health monitoring, and human–machine interfaces. Graphene and its derivatives hold great promise for two-dimensional sensing materials, owing to their superior properties, such as atomically thin, transparent, and flexible structure. The high performance of most graphene-based pressure piezoresistive sensors relies excessively on the preparation of complex, post-growth transfer processes. However, the majority of dielectric substrates cannot hold in high temperatures, which can induce contamination and structural defects. Herein, a credibility strategy is reported for directly growing high-quality vertical graphene (VG) on a flexible and stretchable mica paper dielectric substrate with individual interdigital electrodes in plasma-enhanced chemical vapor deposition (PECVD), which assists in inducing electric field, resulting in a flexible, touchable pressure sensor with low power consumption and portability. Benefitting from its vertically directed graphene microstructure, the graphene-based sensor shows superior properties of high sensitivity (4.84 KPa<sup<−1</sup<) and a maximum pressure range of 120 KPa, as well as strong stability (5000 cycles), which makes it possible to detect small pulse pressure and provide options for preparation of pressure sensors in the future.
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700
container_issue	5, p 681
title_short	Preparation of a Vertical Graphene-Based Pressure Sensor Using PECVD at a Low Temperature
url	https://doi.org/10.3390/mi13050681 https://doaj.org/article/784d56e22dd348e8b190483fd86e894a https://www.mdpi.com/2072-666X/13/5/681 https://doaj.org/toc/2072-666X
remote_bool	true
author2	Kunpeng Zhang Guang Feng Quan Wang Peihong Fu Fengping Li
author2Str	Kunpeng Zhang Guang Feng Quan Wang Peihong Fu Fengping Li
ppnlink	665016069
callnumber-subject	TJ - Mechanical Engineering and Machinery
mediatype_str_mv	c
isOA_txt	true
hochschulschrift_bool	false
doi_str	10.3390/mi13050681
callnumber-a	TJ1-1570
up_date	2024-07-03T21:36:28.130Z
_version_	1803595376892051456
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ041686934</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20240414220140.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230227s2022 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.3390/mi13050681</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ041686934</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJ784d56e22dd348e8b190483fd86e894a</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TJ1-1570</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Xin Cao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Preparation of a Vertical Graphene-Based Pressure Sensor Using PECVD at a Low Temperature</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2022</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Flexible pressure sensors have received much attention due to their widespread potential applications in electronic skins, health monitoring, and human–machine interfaces. Graphene and its derivatives hold great promise for two-dimensional sensing materials, owing to their superior properties, such as atomically thin, transparent, and flexible structure. The high performance of most graphene-based pressure piezoresistive sensors relies excessively on the preparation of complex, post-growth transfer processes. However, the majority of dielectric substrates cannot hold in high temperatures, which can induce contamination and structural defects. Herein, a credibility strategy is reported for directly growing high-quality vertical graphene (VG) on a flexible and stretchable mica paper dielectric substrate with individual interdigital electrodes in plasma-enhanced chemical vapor deposition (PECVD), which assists in inducing electric field, resulting in a flexible, touchable pressure sensor with low power consumption and portability. Benefitting from its vertically directed graphene microstructure, the graphene-based sensor shows superior properties of high sensitivity (4.84 KPa<sup<−1</sup<) and a maximum pressure range of 120 KPa, as well as strong stability (5000 cycles), which makes it possible to detect small pulse pressure and provide options for preparation of pressure sensors in the future.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">flexible</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">pressure</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">vertical graphene (VG)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">sensor</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Mechanical engineering and machinery</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Kunpeng Zhang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Guang Feng</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Quan Wang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Peihong Fu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Fengping Li</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">Micromachines</subfield><subfield code="d">MDPI AG, 2010</subfield><subfield code="g">13(2022), 5, p 681</subfield><subfield code="w">(DE-627)665016069</subfield><subfield code="w">(DE-600)2620864-7</subfield><subfield code="x">2072666X</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:13</subfield><subfield code="g">year:2022</subfield><subfield code="g">number:5, p 681</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.3390/mi13050681</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/784d56e22dd348e8b190483fd86e894a</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://www.mdpi.com/2072-666X/13/5/681</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2072-666X</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">13</subfield><subfield code="j">2022</subfield><subfield code="e">5, p 681</subfield></datafield></record></collection>
score	7.40178

Nicht das Richtige dabei?

Schreiben Sie uns!

Preparation of a Vertical Graphene-Based Pressure Sensor Using PECVD at a Low Temperature

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?