Novel Exfoliation of High-Quality 2H-MoS<sub<2</sub< Nanoflakes for Solution-Processed Photodetector
Highly dispersive molybdenum disulfide nanoflakes (MoS<sub<2</sub< NFs), without any phase transition during the exfoliation process, are desirable for full utilization of their semiconductor properties in practical applications. Here, we demonstrate an innovate approach for fabricating...
Ausführliche Beschreibung
Autor*in: |
Seulgi Kim [verfasserIn] Woojin Park [verfasserIn] Dohoon Kim [verfasserIn] Jiyeon Kang [verfasserIn] Jaesoung Lee [verfasserIn] Hye Yeon Jang [verfasserIn] Sung Ho Song [verfasserIn] Byungjin Cho [verfasserIn] Dongju Lee [verfasserIn] |
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Format: |
E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2020 |
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Übergeordnetes Werk: |
In: Nanomaterials - MDPI AG, 2012, 10(2020), 6, p 1045 |
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Übergeordnetes Werk: |
volume:10 ; year:2020 ; number:6, p 1045 |
Links: |
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DOI / URN: |
10.3390/nano10061045 |
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Katalog-ID: |
DOAJ044188919 |
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10.3390/nano10061045 doi (DE-627)DOAJ044188919 (DE-599)DOAJb2fe196e18ef4fcfa96e6864547e3b53 DE-627 ger DE-627 rakwb eng QD1-999 Seulgi Kim verfasserin aut Novel Exfoliation of High-Quality 2H-MoS<sub<2</sub< Nanoflakes for Solution-Processed Photodetector 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Highly dispersive molybdenum disulfide nanoflakes (MoS<sub<2</sub< NFs), without any phase transition during the exfoliation process, are desirable for full utilization of their semiconductor properties in practical applications. Here, we demonstrate an innovate approach for fabricating MoS<sub<2</sub< NFs by using hydrazine-assisted ball milling via the synergetic effect of chemical intercalation and mechanical exfoliation. The NFs obtained have a lateral size of 600–800 nm, a thickness less than 3 nm, and high crystallinity in the 2H semiconducting phase. They form a stable dispersion in various solvents, which will be helpful for many applications, due to the oxygen functional group. To investigate production of a two-dimensional (2D) photodetector, 2D semiconducting MoS<sub<2</sub<, MoS<sub<2</sub<–p-Si vertical devices were fabricated, and their optical properties were characterized. The photodiode exhibited consistent responses with excellent photo-switching characteristics with wavelengths of 850, 530, and 400 nm. molybdenum disulfide nanoflakes hydrazine ball milling photodiode Chemistry Woojin Park verfasserin aut Dohoon Kim verfasserin aut Jiyeon Kang verfasserin aut Jaesoung Lee verfasserin aut Hye Yeon Jang verfasserin aut Sung Ho Song verfasserin aut Byungjin Cho verfasserin aut Dongju Lee verfasserin aut In Nanomaterials MDPI AG, 2012 10(2020), 6, p 1045 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:10 year:2020 number:6, p 1045 https://doi.org/10.3390/nano10061045 kostenfrei https://doaj.org/article/b2fe196e18ef4fcfa96e6864547e3b53 kostenfrei https://www.mdpi.com/2079-4991/10/6/1045 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2020 6, p 1045 |
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10.3390/nano10061045 doi (DE-627)DOAJ044188919 (DE-599)DOAJb2fe196e18ef4fcfa96e6864547e3b53 DE-627 ger DE-627 rakwb eng QD1-999 Seulgi Kim verfasserin aut Novel Exfoliation of High-Quality 2H-MoS<sub<2</sub< Nanoflakes for Solution-Processed Photodetector 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Highly dispersive molybdenum disulfide nanoflakes (MoS<sub<2</sub< NFs), without any phase transition during the exfoliation process, are desirable for full utilization of their semiconductor properties in practical applications. Here, we demonstrate an innovate approach for fabricating MoS<sub<2</sub< NFs by using hydrazine-assisted ball milling via the synergetic effect of chemical intercalation and mechanical exfoliation. The NFs obtained have a lateral size of 600–800 nm, a thickness less than 3 nm, and high crystallinity in the 2H semiconducting phase. They form a stable dispersion in various solvents, which will be helpful for many applications, due to the oxygen functional group. To investigate production of a two-dimensional (2D) photodetector, 2D semiconducting MoS<sub<2</sub<, MoS<sub<2</sub<–p-Si vertical devices were fabricated, and their optical properties were characterized. The photodiode exhibited consistent responses with excellent photo-switching characteristics with wavelengths of 850, 530, and 400 nm. molybdenum disulfide nanoflakes hydrazine ball milling photodiode Chemistry Woojin Park verfasserin aut Dohoon Kim verfasserin aut Jiyeon Kang verfasserin aut Jaesoung Lee verfasserin aut Hye Yeon Jang verfasserin aut Sung Ho Song verfasserin aut Byungjin Cho verfasserin aut Dongju Lee verfasserin aut In Nanomaterials MDPI AG, 2012 10(2020), 6, p 1045 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:10 year:2020 number:6, p 1045 https://doi.org/10.3390/nano10061045 kostenfrei https://doaj.org/article/b2fe196e18ef4fcfa96e6864547e3b53 kostenfrei https://www.mdpi.com/2079-4991/10/6/1045 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2020 6, p 1045 |
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10.3390/nano10061045 doi (DE-627)DOAJ044188919 (DE-599)DOAJb2fe196e18ef4fcfa96e6864547e3b53 DE-627 ger DE-627 rakwb eng QD1-999 Seulgi Kim verfasserin aut Novel Exfoliation of High-Quality 2H-MoS<sub<2</sub< Nanoflakes for Solution-Processed Photodetector 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Highly dispersive molybdenum disulfide nanoflakes (MoS<sub<2</sub< NFs), without any phase transition during the exfoliation process, are desirable for full utilization of their semiconductor properties in practical applications. Here, we demonstrate an innovate approach for fabricating MoS<sub<2</sub< NFs by using hydrazine-assisted ball milling via the synergetic effect of chemical intercalation and mechanical exfoliation. The NFs obtained have a lateral size of 600–800 nm, a thickness less than 3 nm, and high crystallinity in the 2H semiconducting phase. They form a stable dispersion in various solvents, which will be helpful for many applications, due to the oxygen functional group. To investigate production of a two-dimensional (2D) photodetector, 2D semiconducting MoS<sub<2</sub<, MoS<sub<2</sub<–p-Si vertical devices were fabricated, and their optical properties were characterized. The photodiode exhibited consistent responses with excellent photo-switching characteristics with wavelengths of 850, 530, and 400 nm. molybdenum disulfide nanoflakes hydrazine ball milling photodiode Chemistry Woojin Park verfasserin aut Dohoon Kim verfasserin aut Jiyeon Kang verfasserin aut Jaesoung Lee verfasserin aut Hye Yeon Jang verfasserin aut Sung Ho Song verfasserin aut Byungjin Cho verfasserin aut Dongju Lee verfasserin aut In Nanomaterials MDPI AG, 2012 10(2020), 6, p 1045 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:10 year:2020 number:6, p 1045 https://doi.org/10.3390/nano10061045 kostenfrei https://doaj.org/article/b2fe196e18ef4fcfa96e6864547e3b53 kostenfrei https://www.mdpi.com/2079-4991/10/6/1045 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2020 6, p 1045 |
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10.3390/nano10061045 doi (DE-627)DOAJ044188919 (DE-599)DOAJb2fe196e18ef4fcfa96e6864547e3b53 DE-627 ger DE-627 rakwb eng QD1-999 Seulgi Kim verfasserin aut Novel Exfoliation of High-Quality 2H-MoS<sub<2</sub< Nanoflakes for Solution-Processed Photodetector 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Highly dispersive molybdenum disulfide nanoflakes (MoS<sub<2</sub< NFs), without any phase transition during the exfoliation process, are desirable for full utilization of their semiconductor properties in practical applications. Here, we demonstrate an innovate approach for fabricating MoS<sub<2</sub< NFs by using hydrazine-assisted ball milling via the synergetic effect of chemical intercalation and mechanical exfoliation. The NFs obtained have a lateral size of 600–800 nm, a thickness less than 3 nm, and high crystallinity in the 2H semiconducting phase. They form a stable dispersion in various solvents, which will be helpful for many applications, due to the oxygen functional group. To investigate production of a two-dimensional (2D) photodetector, 2D semiconducting MoS<sub<2</sub<, MoS<sub<2</sub<–p-Si vertical devices were fabricated, and their optical properties were characterized. The photodiode exhibited consistent responses with excellent photo-switching characteristics with wavelengths of 850, 530, and 400 nm. molybdenum disulfide nanoflakes hydrazine ball milling photodiode Chemistry Woojin Park verfasserin aut Dohoon Kim verfasserin aut Jiyeon Kang verfasserin aut Jaesoung Lee verfasserin aut Hye Yeon Jang verfasserin aut Sung Ho Song verfasserin aut Byungjin Cho verfasserin aut Dongju Lee verfasserin aut In Nanomaterials MDPI AG, 2012 10(2020), 6, p 1045 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:10 year:2020 number:6, p 1045 https://doi.org/10.3390/nano10061045 kostenfrei https://doaj.org/article/b2fe196e18ef4fcfa96e6864547e3b53 kostenfrei https://www.mdpi.com/2079-4991/10/6/1045 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2020 6, p 1045 |
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10.3390/nano10061045 doi (DE-627)DOAJ044188919 (DE-599)DOAJb2fe196e18ef4fcfa96e6864547e3b53 DE-627 ger DE-627 rakwb eng QD1-999 Seulgi Kim verfasserin aut Novel Exfoliation of High-Quality 2H-MoS<sub<2</sub< Nanoflakes for Solution-Processed Photodetector 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Highly dispersive molybdenum disulfide nanoflakes (MoS<sub<2</sub< NFs), without any phase transition during the exfoliation process, are desirable for full utilization of their semiconductor properties in practical applications. Here, we demonstrate an innovate approach for fabricating MoS<sub<2</sub< NFs by using hydrazine-assisted ball milling via the synergetic effect of chemical intercalation and mechanical exfoliation. The NFs obtained have a lateral size of 600–800 nm, a thickness less than 3 nm, and high crystallinity in the 2H semiconducting phase. They form a stable dispersion in various solvents, which will be helpful for many applications, due to the oxygen functional group. To investigate production of a two-dimensional (2D) photodetector, 2D semiconducting MoS<sub<2</sub<, MoS<sub<2</sub<–p-Si vertical devices were fabricated, and their optical properties were characterized. The photodiode exhibited consistent responses with excellent photo-switching characteristics with wavelengths of 850, 530, and 400 nm. molybdenum disulfide nanoflakes hydrazine ball milling photodiode Chemistry Woojin Park verfasserin aut Dohoon Kim verfasserin aut Jiyeon Kang verfasserin aut Jaesoung Lee verfasserin aut Hye Yeon Jang verfasserin aut Sung Ho Song verfasserin aut Byungjin Cho verfasserin aut Dongju Lee verfasserin aut In Nanomaterials MDPI AG, 2012 10(2020), 6, p 1045 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:10 year:2020 number:6, p 1045 https://doi.org/10.3390/nano10061045 kostenfrei https://doaj.org/article/b2fe196e18ef4fcfa96e6864547e3b53 kostenfrei https://www.mdpi.com/2079-4991/10/6/1045 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2020 6, p 1045 |
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Novel Exfoliation of High-Quality 2H-MoS<sub<2</sub< Nanoflakes for Solution-Processed Photodetector |
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Highly dispersive molybdenum disulfide nanoflakes (MoS<sub<2</sub< NFs), without any phase transition during the exfoliation process, are desirable for full utilization of their semiconductor properties in practical applications. Here, we demonstrate an innovate approach for fabricating MoS<sub<2</sub< NFs by using hydrazine-assisted ball milling via the synergetic effect of chemical intercalation and mechanical exfoliation. The NFs obtained have a lateral size of 600–800 nm, a thickness less than 3 nm, and high crystallinity in the 2H semiconducting phase. They form a stable dispersion in various solvents, which will be helpful for many applications, due to the oxygen functional group. To investigate production of a two-dimensional (2D) photodetector, 2D semiconducting MoS<sub<2</sub<, MoS<sub<2</sub<–p-Si vertical devices were fabricated, and their optical properties were characterized. The photodiode exhibited consistent responses with excellent photo-switching characteristics with wavelengths of 850, 530, and 400 nm. |
abstractGer |
Highly dispersive molybdenum disulfide nanoflakes (MoS<sub<2</sub< NFs), without any phase transition during the exfoliation process, are desirable for full utilization of their semiconductor properties in practical applications. Here, we demonstrate an innovate approach for fabricating MoS<sub<2</sub< NFs by using hydrazine-assisted ball milling via the synergetic effect of chemical intercalation and mechanical exfoliation. The NFs obtained have a lateral size of 600–800 nm, a thickness less than 3 nm, and high crystallinity in the 2H semiconducting phase. They form a stable dispersion in various solvents, which will be helpful for many applications, due to the oxygen functional group. To investigate production of a two-dimensional (2D) photodetector, 2D semiconducting MoS<sub<2</sub<, MoS<sub<2</sub<–p-Si vertical devices were fabricated, and their optical properties were characterized. The photodiode exhibited consistent responses with excellent photo-switching characteristics with wavelengths of 850, 530, and 400 nm. |
abstract_unstemmed |
Highly dispersive molybdenum disulfide nanoflakes (MoS<sub<2</sub< NFs), without any phase transition during the exfoliation process, are desirable for full utilization of their semiconductor properties in practical applications. Here, we demonstrate an innovate approach for fabricating MoS<sub<2</sub< NFs by using hydrazine-assisted ball milling via the synergetic effect of chemical intercalation and mechanical exfoliation. The NFs obtained have a lateral size of 600–800 nm, a thickness less than 3 nm, and high crystallinity in the 2H semiconducting phase. They form a stable dispersion in various solvents, which will be helpful for many applications, due to the oxygen functional group. To investigate production of a two-dimensional (2D) photodetector, 2D semiconducting MoS<sub<2</sub<, MoS<sub<2</sub<–p-Si vertical devices were fabricated, and their optical properties were characterized. The photodiode exhibited consistent responses with excellent photo-switching characteristics with wavelengths of 850, 530, and 400 nm. |
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