Novel Exfoliation of High-Quality 2H-MoS<sub<2</sub< Nanoflakes for Solution-Processed Photodetector

Highly dispersive molybdenum disulfide nanoflakes (MoS<sub<2</sub< NFs), without any phase transition during the exfoliation process, are desirable for full utilization of their semiconductor properties in practical applications. Here, we demonstrate an innovate approach for fabricating...
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Autor*in:	Seulgi Kim [verfasserIn] Woojin Park [verfasserIn] Dohoon Kim [verfasserIn] Jiyeon Kang [verfasserIn] Jaesoung Lee [verfasserIn] Hye Yeon Jang [verfasserIn] Sung Ho Song [verfasserIn] Byungjin Cho [verfasserIn] Dongju Lee [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2020

Schlagwörter:	molybdenum disulfide nanoflakes hydrazine ball milling photodiode

Übergeordnetes Werk:	In: Nanomaterials - MDPI AG, 2012, 10(2020), 6, p 1045
Übergeordnetes Werk:	volume:10 ; year:2020 ; number:6, p 1045

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/nano10061045

Katalog-ID:	DOAJ044188919

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allfields	10.3390/nano10061045 doi (DE-627)DOAJ044188919 (DE-599)DOAJb2fe196e18ef4fcfa96e6864547e3b53 DE-627 ger DE-627 rakwb eng QD1-999 Seulgi Kim verfasserin aut Novel Exfoliation of High-Quality 2H-MoS<sub<2</sub< Nanoflakes for Solution-Processed Photodetector 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Highly dispersive molybdenum disulfide nanoflakes (MoS<sub<2</sub< NFs), without any phase transition during the exfoliation process, are desirable for full utilization of their semiconductor properties in practical applications. Here, we demonstrate an innovate approach for fabricating MoS<sub<2</sub< NFs by using hydrazine-assisted ball milling via the synergetic effect of chemical intercalation and mechanical exfoliation. The NFs obtained have a lateral size of 600–800 nm, a thickness less than 3 nm, and high crystallinity in the 2H semiconducting phase. They form a stable dispersion in various solvents, which will be helpful for many applications, due to the oxygen functional group. To investigate production of a two-dimensional (2D) photodetector, 2D semiconducting MoS<sub<2</sub<, MoS<sub<2</sub<–p-Si vertical devices were fabricated, and their optical properties were characterized. The photodiode exhibited consistent responses with excellent photo-switching characteristics with wavelengths of 850, 530, and 400 nm. molybdenum disulfide nanoflakes hydrazine ball milling photodiode Chemistry Woojin Park verfasserin aut Dohoon Kim verfasserin aut Jiyeon Kang verfasserin aut Jaesoung Lee verfasserin aut Hye Yeon Jang verfasserin aut Sung Ho Song verfasserin aut Byungjin Cho verfasserin aut Dongju Lee verfasserin aut In Nanomaterials MDPI AG, 2012 10(2020), 6, p 1045 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:10 year:2020 number:6, p 1045 https://doi.org/10.3390/nano10061045 kostenfrei https://doaj.org/article/b2fe196e18ef4fcfa96e6864547e3b53 kostenfrei https://www.mdpi.com/2079-4991/10/6/1045 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2020 6, p 1045
spelling	10.3390/nano10061045 doi (DE-627)DOAJ044188919 (DE-599)DOAJb2fe196e18ef4fcfa96e6864547e3b53 DE-627 ger DE-627 rakwb eng QD1-999 Seulgi Kim verfasserin aut Novel Exfoliation of High-Quality 2H-MoS<sub<2</sub< Nanoflakes for Solution-Processed Photodetector 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Highly dispersive molybdenum disulfide nanoflakes (MoS<sub<2</sub< NFs), without any phase transition during the exfoliation process, are desirable for full utilization of their semiconductor properties in practical applications. Here, we demonstrate an innovate approach for fabricating MoS<sub<2</sub< NFs by using hydrazine-assisted ball milling via the synergetic effect of chemical intercalation and mechanical exfoliation. The NFs obtained have a lateral size of 600–800 nm, a thickness less than 3 nm, and high crystallinity in the 2H semiconducting phase. They form a stable dispersion in various solvents, which will be helpful for many applications, due to the oxygen functional group. To investigate production of a two-dimensional (2D) photodetector, 2D semiconducting MoS<sub<2</sub<, MoS<sub<2</sub<–p-Si vertical devices were fabricated, and their optical properties were characterized. The photodiode exhibited consistent responses with excellent photo-switching characteristics with wavelengths of 850, 530, and 400 nm. molybdenum disulfide nanoflakes hydrazine ball milling photodiode Chemistry Woojin Park verfasserin aut Dohoon Kim verfasserin aut Jiyeon Kang verfasserin aut Jaesoung Lee verfasserin aut Hye Yeon Jang verfasserin aut Sung Ho Song verfasserin aut Byungjin Cho verfasserin aut Dongju Lee verfasserin aut In Nanomaterials MDPI AG, 2012 10(2020), 6, p 1045 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:10 year:2020 number:6, p 1045 https://doi.org/10.3390/nano10061045 kostenfrei https://doaj.org/article/b2fe196e18ef4fcfa96e6864547e3b53 kostenfrei https://www.mdpi.com/2079-4991/10/6/1045 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2020 6, p 1045
allfields_unstemmed	10.3390/nano10061045 doi (DE-627)DOAJ044188919 (DE-599)DOAJb2fe196e18ef4fcfa96e6864547e3b53 DE-627 ger DE-627 rakwb eng QD1-999 Seulgi Kim verfasserin aut Novel Exfoliation of High-Quality 2H-MoS<sub<2</sub< Nanoflakes for Solution-Processed Photodetector 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Highly dispersive molybdenum disulfide nanoflakes (MoS<sub<2</sub< NFs), without any phase transition during the exfoliation process, are desirable for full utilization of their semiconductor properties in practical applications. Here, we demonstrate an innovate approach for fabricating MoS<sub<2</sub< NFs by using hydrazine-assisted ball milling via the synergetic effect of chemical intercalation and mechanical exfoliation. The NFs obtained have a lateral size of 600–800 nm, a thickness less than 3 nm, and high crystallinity in the 2H semiconducting phase. They form a stable dispersion in various solvents, which will be helpful for many applications, due to the oxygen functional group. To investigate production of a two-dimensional (2D) photodetector, 2D semiconducting MoS<sub<2</sub<, MoS<sub<2</sub<–p-Si vertical devices were fabricated, and their optical properties were characterized. The photodiode exhibited consistent responses with excellent photo-switching characteristics with wavelengths of 850, 530, and 400 nm. molybdenum disulfide nanoflakes hydrazine ball milling photodiode Chemistry Woojin Park verfasserin aut Dohoon Kim verfasserin aut Jiyeon Kang verfasserin aut Jaesoung Lee verfasserin aut Hye Yeon Jang verfasserin aut Sung Ho Song verfasserin aut Byungjin Cho verfasserin aut Dongju Lee verfasserin aut In Nanomaterials MDPI AG, 2012 10(2020), 6, p 1045 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:10 year:2020 number:6, p 1045 https://doi.org/10.3390/nano10061045 kostenfrei https://doaj.org/article/b2fe196e18ef4fcfa96e6864547e3b53 kostenfrei https://www.mdpi.com/2079-4991/10/6/1045 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2020 6, p 1045
allfieldsGer	10.3390/nano10061045 doi (DE-627)DOAJ044188919 (DE-599)DOAJb2fe196e18ef4fcfa96e6864547e3b53 DE-627 ger DE-627 rakwb eng QD1-999 Seulgi Kim verfasserin aut Novel Exfoliation of High-Quality 2H-MoS<sub<2</sub< Nanoflakes for Solution-Processed Photodetector 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Highly dispersive molybdenum disulfide nanoflakes (MoS<sub<2</sub< NFs), without any phase transition during the exfoliation process, are desirable for full utilization of their semiconductor properties in practical applications. Here, we demonstrate an innovate approach for fabricating MoS<sub<2</sub< NFs by using hydrazine-assisted ball milling via the synergetic effect of chemical intercalation and mechanical exfoliation. The NFs obtained have a lateral size of 600–800 nm, a thickness less than 3 nm, and high crystallinity in the 2H semiconducting phase. They form a stable dispersion in various solvents, which will be helpful for many applications, due to the oxygen functional group. To investigate production of a two-dimensional (2D) photodetector, 2D semiconducting MoS<sub<2</sub<, MoS<sub<2</sub<–p-Si vertical devices were fabricated, and their optical properties were characterized. The photodiode exhibited consistent responses with excellent photo-switching characteristics with wavelengths of 850, 530, and 400 nm. molybdenum disulfide nanoflakes hydrazine ball milling photodiode Chemistry Woojin Park verfasserin aut Dohoon Kim verfasserin aut Jiyeon Kang verfasserin aut Jaesoung Lee verfasserin aut Hye Yeon Jang verfasserin aut Sung Ho Song verfasserin aut Byungjin Cho verfasserin aut Dongju Lee verfasserin aut In Nanomaterials MDPI AG, 2012 10(2020), 6, p 1045 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:10 year:2020 number:6, p 1045 https://doi.org/10.3390/nano10061045 kostenfrei https://doaj.org/article/b2fe196e18ef4fcfa96e6864547e3b53 kostenfrei https://www.mdpi.com/2079-4991/10/6/1045 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2020 6, p 1045
allfieldsSound	10.3390/nano10061045 doi (DE-627)DOAJ044188919 (DE-599)DOAJb2fe196e18ef4fcfa96e6864547e3b53 DE-627 ger DE-627 rakwb eng QD1-999 Seulgi Kim verfasserin aut Novel Exfoliation of High-Quality 2H-MoS<sub<2</sub< Nanoflakes for Solution-Processed Photodetector 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Highly dispersive molybdenum disulfide nanoflakes (MoS<sub<2</sub< NFs), without any phase transition during the exfoliation process, are desirable for full utilization of their semiconductor properties in practical applications. Here, we demonstrate an innovate approach for fabricating MoS<sub<2</sub< NFs by using hydrazine-assisted ball milling via the synergetic effect of chemical intercalation and mechanical exfoliation. The NFs obtained have a lateral size of 600–800 nm, a thickness less than 3 nm, and high crystallinity in the 2H semiconducting phase. They form a stable dispersion in various solvents, which will be helpful for many applications, due to the oxygen functional group. To investigate production of a two-dimensional (2D) photodetector, 2D semiconducting MoS<sub<2</sub<, MoS<sub<2</sub<–p-Si vertical devices were fabricated, and their optical properties were characterized. The photodiode exhibited consistent responses with excellent photo-switching characteristics with wavelengths of 850, 530, and 400 nm. molybdenum disulfide nanoflakes hydrazine ball milling photodiode Chemistry Woojin Park verfasserin aut Dohoon Kim verfasserin aut Jiyeon Kang verfasserin aut Jaesoung Lee verfasserin aut Hye Yeon Jang verfasserin aut Sung Ho Song verfasserin aut Byungjin Cho verfasserin aut Dongju Lee verfasserin aut In Nanomaterials MDPI AG, 2012 10(2020), 6, p 1045 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:10 year:2020 number:6, p 1045 https://doi.org/10.3390/nano10061045 kostenfrei https://doaj.org/article/b2fe196e18ef4fcfa96e6864547e3b53 kostenfrei https://www.mdpi.com/2079-4991/10/6/1045 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2020 6, p 1045
language	English
source	In Nanomaterials 10(2020), 6, p 1045 volume:10 year:2020 number:6, p 1045
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container_title	Nanomaterials
authorswithroles_txt_mv	Seulgi Kim @@aut@@ Woojin Park @@aut@@ Dohoon Kim @@aut@@ Jiyeon Kang @@aut@@ Jaesoung Lee @@aut@@ Hye Yeon Jang @@aut@@ Sung Ho Song @@aut@@ Byungjin Cho @@aut@@ Dongju Lee @@aut@@
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callnumber-first	Q - Science
author	Seulgi Kim
spellingShingle	Seulgi Kim misc QD1-999 misc molybdenum disulfide misc nanoflakes misc hydrazine misc ball milling misc photodiode misc Chemistry Novel Exfoliation of High-Quality 2H-MoS<sub<2</sub< Nanoflakes for Solution-Processed Photodetector
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topic_title	QD1-999 Novel Exfoliation of High-Quality 2H-MoS<sub<2</sub< Nanoflakes for Solution-Processed Photodetector molybdenum disulfide nanoflakes hydrazine ball milling photodiode
topic	misc QD1-999 misc molybdenum disulfide misc nanoflakes misc hydrazine misc ball milling misc photodiode misc Chemistry
topic_unstemmed	misc QD1-999 misc molybdenum disulfide misc nanoflakes misc hydrazine misc ball milling misc photodiode misc Chemistry
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title	Novel Exfoliation of High-Quality 2H-MoS<sub<2</sub< Nanoflakes for Solution-Processed Photodetector
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title_full	Novel Exfoliation of High-Quality 2H-MoS<sub<2</sub< Nanoflakes for Solution-Processed Photodetector
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author_browse	Seulgi Kim Woojin Park Dohoon Kim Jiyeon Kang Jaesoung Lee Hye Yeon Jang Sung Ho Song Byungjin Cho Dongju Lee
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title_sort	novel exfoliation of high-quality 2h-mos<sub<2</sub< nanoflakes for solution-processed photodetector
callnumber	QD1-999
title_auth	Novel Exfoliation of High-Quality 2H-MoS<sub<2</sub< Nanoflakes for Solution-Processed Photodetector
abstract	Highly dispersive molybdenum disulfide nanoflakes (MoS<sub<2</sub< NFs), without any phase transition during the exfoliation process, are desirable for full utilization of their semiconductor properties in practical applications. Here, we demonstrate an innovate approach for fabricating MoS<sub<2</sub< NFs by using hydrazine-assisted ball milling via the synergetic effect of chemical intercalation and mechanical exfoliation. The NFs obtained have a lateral size of 600–800 nm, a thickness less than 3 nm, and high crystallinity in the 2H semiconducting phase. They form a stable dispersion in various solvents, which will be helpful for many applications, due to the oxygen functional group. To investigate production of a two-dimensional (2D) photodetector, 2D semiconducting MoS<sub<2</sub<, MoS<sub<2</sub<–p-Si vertical devices were fabricated, and their optical properties were characterized. The photodiode exhibited consistent responses with excellent photo-switching characteristics with wavelengths of 850, 530, and 400 nm.
abstractGer	Highly dispersive molybdenum disulfide nanoflakes (MoS<sub<2</sub< NFs), without any phase transition during the exfoliation process, are desirable for full utilization of their semiconductor properties in practical applications. Here, we demonstrate an innovate approach for fabricating MoS<sub<2</sub< NFs by using hydrazine-assisted ball milling via the synergetic effect of chemical intercalation and mechanical exfoliation. The NFs obtained have a lateral size of 600–800 nm, a thickness less than 3 nm, and high crystallinity in the 2H semiconducting phase. They form a stable dispersion in various solvents, which will be helpful for many applications, due to the oxygen functional group. To investigate production of a two-dimensional (2D) photodetector, 2D semiconducting MoS<sub<2</sub<, MoS<sub<2</sub<–p-Si vertical devices were fabricated, and their optical properties were characterized. The photodiode exhibited consistent responses with excellent photo-switching characteristics with wavelengths of 850, 530, and 400 nm.
abstract_unstemmed	Highly dispersive molybdenum disulfide nanoflakes (MoS<sub<2</sub< NFs), without any phase transition during the exfoliation process, are desirable for full utilization of their semiconductor properties in practical applications. Here, we demonstrate an innovate approach for fabricating MoS<sub<2</sub< NFs by using hydrazine-assisted ball milling via the synergetic effect of chemical intercalation and mechanical exfoliation. The NFs obtained have a lateral size of 600–800 nm, a thickness less than 3 nm, and high crystallinity in the 2H semiconducting phase. They form a stable dispersion in various solvents, which will be helpful for many applications, due to the oxygen functional group. To investigate production of a two-dimensional (2D) photodetector, 2D semiconducting MoS<sub<2</sub<, MoS<sub<2</sub<–p-Si vertical devices were fabricated, and their optical properties were characterized. The photodiode exhibited consistent responses with excellent photo-switching characteristics with wavelengths of 850, 530, and 400 nm.
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container_issue	6, p 1045
title_short	Novel Exfoliation of High-Quality 2H-MoS<sub<2</sub< Nanoflakes for Solution-Processed Photodetector
url	https://doi.org/10.3390/nano10061045 https://doaj.org/article/b2fe196e18ef4fcfa96e6864547e3b53 https://www.mdpi.com/2079-4991/10/6/1045 https://doaj.org/toc/2079-4991
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up_date	2024-07-03T21:42:06.942Z
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