Influence of Bi nonstoichiometry on the energy storage properties of 0.93KNN–0.07BixMN relaxor ferroelectrics

Ceramic-based dielectric capacitors are becoming more and more important in electronic devices. The ceramics of 0.93K0.5Na0.5NbO3–0.07Bix(Mg1∕3Nb2∕3)O3 (0.93KNN–0.07BixMN) (x=0.60, 2/3, 0.75 and 0.95) were successfully fabricated by virtue of the solid reaction process in this work. The results show...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Xiaoshuang Qiao [verfasserIn] Xiaoshuai Zhang [verfasserIn] Di Wu [verfasserIn] Xiaolian Chao [verfasserIn] Zupei Yang [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2018

Schlagwörter:	Oxygen vacancy nonstoichiometry energy storage

Übergeordnetes Werk:	In: Journal of Advanced Dielectrics - World Scientific Publishing, 2018, 8(2018), 6, Seite 1830006-1-1830006-9
Übergeordnetes Werk:	volume:8 ; year:2018 ; number:6 ; pages:1830006-1-1830006-9

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc Journal toc

DOI / URN:	10.1142/S2010135X18300062

Katalog-ID:	DOAJ044634579

Internformat


LEADER	01000caa a22002652 4500
001	DOAJ044634579
003	DE-627
005	20230501190511.0
007	cr uuu---uuuuu
008	230227s2018 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.1142/S2010135X18300062 \|2 doi
035			\|a (DE-627)DOAJ044634579
035			\|a (DE-599)DOAJacba23f58765485dac4598e3c38c3941
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
050		0	\|a QC501-721
100	0		\|a Xiaoshuang Qiao \|e verfasserin \|4 aut
245	1	0	\|a Influence of Bi nonstoichiometry on the energy storage properties of 0.93KNN–0.07BixMN relaxor ferroelectrics
264		1	\|c 2018
336			\|a Text \|b txt \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
520			\|a Ceramic-based dielectric capacitors are becoming more and more important in electronic devices. The ceramics of 0.93K0.5Na0.5NbO3–0.07Bix(Mg1∕3Nb2∕3)O3 (0.93KNN–0.07BixMN) (x=0.60, 2/3, 0.75 and 0.95) were successfully fabricated by virtue of the solid reaction process in this work. The results showed that the amount of Bi content has a significant impact on the ceramics of 0.93KNN–0.07BixMN. XRD indicates that all specimens exhibit a pure perovskite structure and existing oxygen vacancy in the specimens. The mean grain size for all specimens belong to submicron scale, and the sample of x=0.95 owns the smallest grain size is 0.11μm. The maximum dielectric constant increases but the phase transition temperature Tm exhibits a contrary tendency at 1MHz with increasing Bi concentration. Besides, all ceramics are relaxor ferroelectric. The impedance analysis further revealed that the activation energy of the ceramics increases with Bi content. Eventually, the highest η of 58.8% and Wrec of 1.30J/cm3 are simultaneously achieved in the sample with x=0.60. Overall, we demonstrate in this work that stoichiometry control of Bi in 0.93KNN–0.07BixMN ceramics is a practical method to obtain the desired structural, dielectric and energy storage properties.
650		4	\|a Oxygen vacancy
650		4	\|a nonstoichiometry
650		4	\|a energy storage
653		0	\|a Electricity
700	0		\|a Xiaoshuai Zhang \|e verfasserin \|4 aut
700	0		\|a Di Wu \|e verfasserin \|4 aut
700	0		\|a Xiaolian Chao \|e verfasserin \|4 aut
700	0		\|a Zupei Yang \|e verfasserin \|4 aut
773	0	8	\|i In \|t Journal of Advanced Dielectrics \|d World Scientific Publishing, 2018 \|g 8(2018), 6, Seite 1830006-1-1830006-9 \|w (DE-627)778146960 \|w (DE-600)2756564-6 \|x 20101368 \|7 nnns
773	1	8	\|g volume:8 \|g year:2018 \|g number:6 \|g pages:1830006-1-1830006-9
856	4	0	\|u https://doi.org/10.1142/S2010135X18300062 \|z kostenfrei
856	4	0	\|u https://doaj.org/article/acba23f58765485dac4598e3c38c3941 \|z kostenfrei
856	4	0	\|u http://www.worldscientific.com/doi/pdf/10.1142/S2010135X18300062 \|z kostenfrei
856	4	2	\|u https://doaj.org/toc/2010-135X \|y Journal toc \|z kostenfrei
856	4	2	\|u https://doaj.org/toc/2010-1368 \|y Journal toc \|z kostenfrei
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_DOAJ
912			\|a SSG-OLC-PHA
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_39
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_95
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_151
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_213
912			\|a GBV_ILN_230
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_4012
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4367
912			\|a GBV_ILN_4700
951			\|a AR
952			\|d 8 \|j 2018 \|e 6 \|h 1830006-1-1830006-9

Indexfelder

author_variant	x q xq x z xz d w dw x c xc z y zy
matchkey_str	article:20101368:2018----::nlecobnntihoerotenrytrgpoeteo03n07
hierarchy_sort_str	2018
callnumber-subject-code	QC
publishDate	2018
allfields	10.1142/S2010135X18300062 doi (DE-627)DOAJ044634579 (DE-599)DOAJacba23f58765485dac4598e3c38c3941 DE-627 ger DE-627 rakwb eng QC501-721 Xiaoshuang Qiao verfasserin aut Influence of Bi nonstoichiometry on the energy storage properties of 0.93KNN–0.07BixMN relaxor ferroelectrics 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Ceramic-based dielectric capacitors are becoming more and more important in electronic devices. The ceramics of 0.93K0.5Na0.5NbO3–0.07Bix(Mg1∕3Nb2∕3)O3 (0.93KNN–0.07BixMN) (x=0.60, 2/3, 0.75 and 0.95) were successfully fabricated by virtue of the solid reaction process in this work. The results showed that the amount of Bi content has a significant impact on the ceramics of 0.93KNN–0.07BixMN. XRD indicates that all specimens exhibit a pure perovskite structure and existing oxygen vacancy in the specimens. The mean grain size for all specimens belong to submicron scale, and the sample of x=0.95 owns the smallest grain size is 0.11μm. The maximum dielectric constant increases but the phase transition temperature Tm exhibits a contrary tendency at 1MHz with increasing Bi concentration. Besides, all ceramics are relaxor ferroelectric. The impedance analysis further revealed that the activation energy of the ceramics increases with Bi content. Eventually, the highest η of 58.8% and Wrec of 1.30J/cm3 are simultaneously achieved in the sample with x=0.60. Overall, we demonstrate in this work that stoichiometry control of Bi in 0.93KNN–0.07BixMN ceramics is a practical method to obtain the desired structural, dielectric and energy storage properties. Oxygen vacancy nonstoichiometry energy storage Electricity Xiaoshuai Zhang verfasserin aut Di Wu verfasserin aut Xiaolian Chao verfasserin aut Zupei Yang verfasserin aut In Journal of Advanced Dielectrics World Scientific Publishing, 2018 8(2018), 6, Seite 1830006-1-1830006-9 (DE-627)778146960 (DE-600)2756564-6 20101368 nnns volume:8 year:2018 number:6 pages:1830006-1-1830006-9 https://doi.org/10.1142/S2010135X18300062 kostenfrei https://doaj.org/article/acba23f58765485dac4598e3c38c3941 kostenfrei http://www.worldscientific.com/doi/pdf/10.1142/S2010135X18300062 kostenfrei https://doaj.org/toc/2010-135X Journal toc kostenfrei https://doaj.org/toc/2010-1368 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 8 2018 6 1830006-1-1830006-9
spelling	10.1142/S2010135X18300062 doi (DE-627)DOAJ044634579 (DE-599)DOAJacba23f58765485dac4598e3c38c3941 DE-627 ger DE-627 rakwb eng QC501-721 Xiaoshuang Qiao verfasserin aut Influence of Bi nonstoichiometry on the energy storage properties of 0.93KNN–0.07BixMN relaxor ferroelectrics 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Ceramic-based dielectric capacitors are becoming more and more important in electronic devices. The ceramics of 0.93K0.5Na0.5NbO3–0.07Bix(Mg1∕3Nb2∕3)O3 (0.93KNN–0.07BixMN) (x=0.60, 2/3, 0.75 and 0.95) were successfully fabricated by virtue of the solid reaction process in this work. The results showed that the amount of Bi content has a significant impact on the ceramics of 0.93KNN–0.07BixMN. XRD indicates that all specimens exhibit a pure perovskite structure and existing oxygen vacancy in the specimens. The mean grain size for all specimens belong to submicron scale, and the sample of x=0.95 owns the smallest grain size is 0.11μm. The maximum dielectric constant increases but the phase transition temperature Tm exhibits a contrary tendency at 1MHz with increasing Bi concentration. Besides, all ceramics are relaxor ferroelectric. The impedance analysis further revealed that the activation energy of the ceramics increases with Bi content. Eventually, the highest η of 58.8% and Wrec of 1.30J/cm3 are simultaneously achieved in the sample with x=0.60. Overall, we demonstrate in this work that stoichiometry control of Bi in 0.93KNN–0.07BixMN ceramics is a practical method to obtain the desired structural, dielectric and energy storage properties. Oxygen vacancy nonstoichiometry energy storage Electricity Xiaoshuai Zhang verfasserin aut Di Wu verfasserin aut Xiaolian Chao verfasserin aut Zupei Yang verfasserin aut In Journal of Advanced Dielectrics World Scientific Publishing, 2018 8(2018), 6, Seite 1830006-1-1830006-9 (DE-627)778146960 (DE-600)2756564-6 20101368 nnns volume:8 year:2018 number:6 pages:1830006-1-1830006-9 https://doi.org/10.1142/S2010135X18300062 kostenfrei https://doaj.org/article/acba23f58765485dac4598e3c38c3941 kostenfrei http://www.worldscientific.com/doi/pdf/10.1142/S2010135X18300062 kostenfrei https://doaj.org/toc/2010-135X Journal toc kostenfrei https://doaj.org/toc/2010-1368 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 8 2018 6 1830006-1-1830006-9
allfields_unstemmed	10.1142/S2010135X18300062 doi (DE-627)DOAJ044634579 (DE-599)DOAJacba23f58765485dac4598e3c38c3941 DE-627 ger DE-627 rakwb eng QC501-721 Xiaoshuang Qiao verfasserin aut Influence of Bi nonstoichiometry on the energy storage properties of 0.93KNN–0.07BixMN relaxor ferroelectrics 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Ceramic-based dielectric capacitors are becoming more and more important in electronic devices. The ceramics of 0.93K0.5Na0.5NbO3–0.07Bix(Mg1∕3Nb2∕3)O3 (0.93KNN–0.07BixMN) (x=0.60, 2/3, 0.75 and 0.95) were successfully fabricated by virtue of the solid reaction process in this work. The results showed that the amount of Bi content has a significant impact on the ceramics of 0.93KNN–0.07BixMN. XRD indicates that all specimens exhibit a pure perovskite structure and existing oxygen vacancy in the specimens. The mean grain size for all specimens belong to submicron scale, and the sample of x=0.95 owns the smallest grain size is 0.11μm. The maximum dielectric constant increases but the phase transition temperature Tm exhibits a contrary tendency at 1MHz with increasing Bi concentration. Besides, all ceramics are relaxor ferroelectric. The impedance analysis further revealed that the activation energy of the ceramics increases with Bi content. Eventually, the highest η of 58.8% and Wrec of 1.30J/cm3 are simultaneously achieved in the sample with x=0.60. Overall, we demonstrate in this work that stoichiometry control of Bi in 0.93KNN–0.07BixMN ceramics is a practical method to obtain the desired structural, dielectric and energy storage properties. Oxygen vacancy nonstoichiometry energy storage Electricity Xiaoshuai Zhang verfasserin aut Di Wu verfasserin aut Xiaolian Chao verfasserin aut Zupei Yang verfasserin aut In Journal of Advanced Dielectrics World Scientific Publishing, 2018 8(2018), 6, Seite 1830006-1-1830006-9 (DE-627)778146960 (DE-600)2756564-6 20101368 nnns volume:8 year:2018 number:6 pages:1830006-1-1830006-9 https://doi.org/10.1142/S2010135X18300062 kostenfrei https://doaj.org/article/acba23f58765485dac4598e3c38c3941 kostenfrei http://www.worldscientific.com/doi/pdf/10.1142/S2010135X18300062 kostenfrei https://doaj.org/toc/2010-135X Journal toc kostenfrei https://doaj.org/toc/2010-1368 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 8 2018 6 1830006-1-1830006-9
allfieldsGer	10.1142/S2010135X18300062 doi (DE-627)DOAJ044634579 (DE-599)DOAJacba23f58765485dac4598e3c38c3941 DE-627 ger DE-627 rakwb eng QC501-721 Xiaoshuang Qiao verfasserin aut Influence of Bi nonstoichiometry on the energy storage properties of 0.93KNN–0.07BixMN relaxor ferroelectrics 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Ceramic-based dielectric capacitors are becoming more and more important in electronic devices. The ceramics of 0.93K0.5Na0.5NbO3–0.07Bix(Mg1∕3Nb2∕3)O3 (0.93KNN–0.07BixMN) (x=0.60, 2/3, 0.75 and 0.95) were successfully fabricated by virtue of the solid reaction process in this work. The results showed that the amount of Bi content has a significant impact on the ceramics of 0.93KNN–0.07BixMN. XRD indicates that all specimens exhibit a pure perovskite structure and existing oxygen vacancy in the specimens. The mean grain size for all specimens belong to submicron scale, and the sample of x=0.95 owns the smallest grain size is 0.11μm. The maximum dielectric constant increases but the phase transition temperature Tm exhibits a contrary tendency at 1MHz with increasing Bi concentration. Besides, all ceramics are relaxor ferroelectric. The impedance analysis further revealed that the activation energy of the ceramics increases with Bi content. Eventually, the highest η of 58.8% and Wrec of 1.30J/cm3 are simultaneously achieved in the sample with x=0.60. Overall, we demonstrate in this work that stoichiometry control of Bi in 0.93KNN–0.07BixMN ceramics is a practical method to obtain the desired structural, dielectric and energy storage properties. Oxygen vacancy nonstoichiometry energy storage Electricity Xiaoshuai Zhang verfasserin aut Di Wu verfasserin aut Xiaolian Chao verfasserin aut Zupei Yang verfasserin aut In Journal of Advanced Dielectrics World Scientific Publishing, 2018 8(2018), 6, Seite 1830006-1-1830006-9 (DE-627)778146960 (DE-600)2756564-6 20101368 nnns volume:8 year:2018 number:6 pages:1830006-1-1830006-9 https://doi.org/10.1142/S2010135X18300062 kostenfrei https://doaj.org/article/acba23f58765485dac4598e3c38c3941 kostenfrei http://www.worldscientific.com/doi/pdf/10.1142/S2010135X18300062 kostenfrei https://doaj.org/toc/2010-135X Journal toc kostenfrei https://doaj.org/toc/2010-1368 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 8 2018 6 1830006-1-1830006-9
allfieldsSound	10.1142/S2010135X18300062 doi (DE-627)DOAJ044634579 (DE-599)DOAJacba23f58765485dac4598e3c38c3941 DE-627 ger DE-627 rakwb eng QC501-721 Xiaoshuang Qiao verfasserin aut Influence of Bi nonstoichiometry on the energy storage properties of 0.93KNN–0.07BixMN relaxor ferroelectrics 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Ceramic-based dielectric capacitors are becoming more and more important in electronic devices. The ceramics of 0.93K0.5Na0.5NbO3–0.07Bix(Mg1∕3Nb2∕3)O3 (0.93KNN–0.07BixMN) (x=0.60, 2/3, 0.75 and 0.95) were successfully fabricated by virtue of the solid reaction process in this work. The results showed that the amount of Bi content has a significant impact on the ceramics of 0.93KNN–0.07BixMN. XRD indicates that all specimens exhibit a pure perovskite structure and existing oxygen vacancy in the specimens. The mean grain size for all specimens belong to submicron scale, and the sample of x=0.95 owns the smallest grain size is 0.11μm. The maximum dielectric constant increases but the phase transition temperature Tm exhibits a contrary tendency at 1MHz with increasing Bi concentration. Besides, all ceramics are relaxor ferroelectric. The impedance analysis further revealed that the activation energy of the ceramics increases with Bi content. Eventually, the highest η of 58.8% and Wrec of 1.30J/cm3 are simultaneously achieved in the sample with x=0.60. Overall, we demonstrate in this work that stoichiometry control of Bi in 0.93KNN–0.07BixMN ceramics is a practical method to obtain the desired structural, dielectric and energy storage properties. Oxygen vacancy nonstoichiometry energy storage Electricity Xiaoshuai Zhang verfasserin aut Di Wu verfasserin aut Xiaolian Chao verfasserin aut Zupei Yang verfasserin aut In Journal of Advanced Dielectrics World Scientific Publishing, 2018 8(2018), 6, Seite 1830006-1-1830006-9 (DE-627)778146960 (DE-600)2756564-6 20101368 nnns volume:8 year:2018 number:6 pages:1830006-1-1830006-9 https://doi.org/10.1142/S2010135X18300062 kostenfrei https://doaj.org/article/acba23f58765485dac4598e3c38c3941 kostenfrei http://www.worldscientific.com/doi/pdf/10.1142/S2010135X18300062 kostenfrei https://doaj.org/toc/2010-135X Journal toc kostenfrei https://doaj.org/toc/2010-1368 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 8 2018 6 1830006-1-1830006-9
language	English
source	In Journal of Advanced Dielectrics 8(2018), 6, Seite 1830006-1-1830006-9 volume:8 year:2018 number:6 pages:1830006-1-1830006-9
sourceStr	In Journal of Advanced Dielectrics 8(2018), 6, Seite 1830006-1-1830006-9 volume:8 year:2018 number:6 pages:1830006-1-1830006-9
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Oxygen vacancy nonstoichiometry energy storage Electricity
isfreeaccess_bool	true
container_title	Journal of Advanced Dielectrics
authorswithroles_txt_mv	Xiaoshuang Qiao @@aut@@ Xiaoshuai Zhang @@aut@@ Di Wu @@aut@@ Xiaolian Chao @@aut@@ Zupei Yang @@aut@@
publishDateDaySort_date	2018-01-01T00:00:00Z
hierarchy_top_id	778146960
id	DOAJ044634579
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ044634579</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230501190511.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230227s2018 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1142/S2010135X18300062</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ044634579</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJacba23f58765485dac4598e3c38c3941</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QC501-721</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Xiaoshuang Qiao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Influence of Bi nonstoichiometry on the energy storage properties of 0.93KNN–0.07BixMN relaxor ferroelectrics</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2018</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Ceramic-based dielectric capacitors are becoming more and more important in electronic devices. The ceramics of 0.93K0.5Na0.5NbO3–0.07Bix(Mg1∕3Nb2∕3)O3 (0.93KNN–0.07BixMN) (x=0.60, 2/3, 0.75 and 0.95) were successfully fabricated by virtue of the solid reaction process in this work. The results showed that the amount of Bi content has a significant impact on the ceramics of 0.93KNN–0.07BixMN. XRD indicates that all specimens exhibit a pure perovskite structure and existing oxygen vacancy in the specimens. The mean grain size for all specimens belong to submicron scale, and the sample of x=0.95 owns the smallest grain size is 0.11μm. The maximum dielectric constant increases but the phase transition temperature Tm exhibits a contrary tendency at 1MHz with increasing Bi concentration. Besides, all ceramics are relaxor ferroelectric. The impedance analysis further revealed that the activation energy of the ceramics increases with Bi content. Eventually, the highest η of 58.8% and Wrec of 1.30J/cm3 are simultaneously achieved in the sample with x=0.60. Overall, we demonstrate in this work that stoichiometry control of Bi in 0.93KNN–0.07BixMN ceramics is a practical method to obtain the desired structural, dielectric and energy storage properties.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Oxygen vacancy</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">nonstoichiometry</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">energy storage</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Electricity</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Xiaoshuai Zhang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Di Wu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Xiaolian Chao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Zupei Yang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">Journal of Advanced Dielectrics</subfield><subfield code="d">World Scientific Publishing, 2018</subfield><subfield code="g">8(2018), 6, Seite 1830006-1-1830006-9</subfield><subfield code="w">(DE-627)778146960</subfield><subfield code="w">(DE-600)2756564-6</subfield><subfield code="x">20101368</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:8</subfield><subfield code="g">year:2018</subfield><subfield code="g">number:6</subfield><subfield code="g">pages:1830006-1-1830006-9</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1142/S2010135X18300062</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/acba23f58765485dac4598e3c38c3941</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://www.worldscientific.com/doi/pdf/10.1142/S2010135X18300062</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2010-135X</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2010-1368</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">8</subfield><subfield code="j">2018</subfield><subfield code="e">6</subfield><subfield code="h">1830006-1-1830006-9</subfield></datafield></record></collection>
callnumber-first	Q - Science
author	Xiaoshuang Qiao
spellingShingle	Xiaoshuang Qiao misc QC501-721 misc Oxygen vacancy misc nonstoichiometry misc energy storage misc Electricity Influence of Bi nonstoichiometry on the energy storage properties of 0.93KNN–0.07BixMN relaxor ferroelectrics
authorStr	Xiaoshuang Qiao
ppnlink_with_tag_str_mv	@@773@@(DE-627)778146960
format	electronic Article
delete_txt_mv	keep
author_role	aut aut aut aut aut
collection	DOAJ
remote_str	true
callnumber-label	QC501-721
illustrated	Not Illustrated
issn	20101368
topic_title	QC501-721 Influence of Bi nonstoichiometry on the energy storage properties of 0.93KNN–0.07BixMN relaxor ferroelectrics Oxygen vacancy nonstoichiometry energy storage
topic	misc QC501-721 misc Oxygen vacancy misc nonstoichiometry misc energy storage misc Electricity
topic_unstemmed	misc QC501-721 misc Oxygen vacancy misc nonstoichiometry misc energy storage misc Electricity
topic_browse	misc QC501-721 misc Oxygen vacancy misc nonstoichiometry misc energy storage misc Electricity
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	cr
hierarchy_parent_title	Journal of Advanced Dielectrics
hierarchy_parent_id	778146960
hierarchy_top_title	Journal of Advanced Dielectrics
isfreeaccess_txt	true
familylinks_str_mv	(DE-627)778146960 (DE-600)2756564-6
title	Influence of Bi nonstoichiometry on the energy storage properties of 0.93KNN–0.07BixMN relaxor ferroelectrics
ctrlnum	(DE-627)DOAJ044634579 (DE-599)DOAJacba23f58765485dac4598e3c38c3941
title_full	Influence of Bi nonstoichiometry on the energy storage properties of 0.93KNN–0.07BixMN relaxor ferroelectrics
author_sort	Xiaoshuang Qiao
journal	Journal of Advanced Dielectrics
journalStr	Journal of Advanced Dielectrics
callnumber-first-code	Q
lang_code	eng
isOA_bool	true
recordtype	marc
publishDateSort	2018
contenttype_str_mv	txt
container_start_page	1830006
author_browse	Xiaoshuang Qiao Xiaoshuai Zhang Di Wu Xiaolian Chao Zupei Yang
container_volume	8
class	QC501-721
format_se	Elektronische Aufsätze
author-letter	Xiaoshuang Qiao
doi_str_mv	10.1142/S2010135X18300062
author2-role	verfasserin
title_sort	influence of bi nonstoichiometry on the energy storage properties of 0.93knn–0.07bixmn relaxor ferroelectrics
callnumber	QC501-721
title_auth	Influence of Bi nonstoichiometry on the energy storage properties of 0.93KNN–0.07BixMN relaxor ferroelectrics
abstract	Ceramic-based dielectric capacitors are becoming more and more important in electronic devices. The ceramics of 0.93K0.5Na0.5NbO3–0.07Bix(Mg1∕3Nb2∕3)O3 (0.93KNN–0.07BixMN) (x=0.60, 2/3, 0.75 and 0.95) were successfully fabricated by virtue of the solid reaction process in this work. The results showed that the amount of Bi content has a significant impact on the ceramics of 0.93KNN–0.07BixMN. XRD indicates that all specimens exhibit a pure perovskite structure and existing oxygen vacancy in the specimens. The mean grain size for all specimens belong to submicron scale, and the sample of x=0.95 owns the smallest grain size is 0.11μm. The maximum dielectric constant increases but the phase transition temperature Tm exhibits a contrary tendency at 1MHz with increasing Bi concentration. Besides, all ceramics are relaxor ferroelectric. The impedance analysis further revealed that the activation energy of the ceramics increases with Bi content. Eventually, the highest η of 58.8% and Wrec of 1.30J/cm3 are simultaneously achieved in the sample with x=0.60. Overall, we demonstrate in this work that stoichiometry control of Bi in 0.93KNN–0.07BixMN ceramics is a practical method to obtain the desired structural, dielectric and energy storage properties.
abstractGer	Ceramic-based dielectric capacitors are becoming more and more important in electronic devices. The ceramics of 0.93K0.5Na0.5NbO3–0.07Bix(Mg1∕3Nb2∕3)O3 (0.93KNN–0.07BixMN) (x=0.60, 2/3, 0.75 and 0.95) were successfully fabricated by virtue of the solid reaction process in this work. The results showed that the amount of Bi content has a significant impact on the ceramics of 0.93KNN–0.07BixMN. XRD indicates that all specimens exhibit a pure perovskite structure and existing oxygen vacancy in the specimens. The mean grain size for all specimens belong to submicron scale, and the sample of x=0.95 owns the smallest grain size is 0.11μm. The maximum dielectric constant increases but the phase transition temperature Tm exhibits a contrary tendency at 1MHz with increasing Bi concentration. Besides, all ceramics are relaxor ferroelectric. The impedance analysis further revealed that the activation energy of the ceramics increases with Bi content. Eventually, the highest η of 58.8% and Wrec of 1.30J/cm3 are simultaneously achieved in the sample with x=0.60. Overall, we demonstrate in this work that stoichiometry control of Bi in 0.93KNN–0.07BixMN ceramics is a practical method to obtain the desired structural, dielectric and energy storage properties.
abstract_unstemmed	Ceramic-based dielectric capacitors are becoming more and more important in electronic devices. The ceramics of 0.93K0.5Na0.5NbO3–0.07Bix(Mg1∕3Nb2∕3)O3 (0.93KNN–0.07BixMN) (x=0.60, 2/3, 0.75 and 0.95) were successfully fabricated by virtue of the solid reaction process in this work. The results showed that the amount of Bi content has a significant impact on the ceramics of 0.93KNN–0.07BixMN. XRD indicates that all specimens exhibit a pure perovskite structure and existing oxygen vacancy in the specimens. The mean grain size for all specimens belong to submicron scale, and the sample of x=0.95 owns the smallest grain size is 0.11μm. The maximum dielectric constant increases but the phase transition temperature Tm exhibits a contrary tendency at 1MHz with increasing Bi concentration. Besides, all ceramics are relaxor ferroelectric. The impedance analysis further revealed that the activation energy of the ceramics increases with Bi content. Eventually, the highest η of 58.8% and Wrec of 1.30J/cm3 are simultaneously achieved in the sample with x=0.60. Overall, we demonstrate in this work that stoichiometry control of Bi in 0.93KNN–0.07BixMN ceramics is a practical method to obtain the desired structural, dielectric and energy storage properties.
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700
container_issue	6
title_short	Influence of Bi nonstoichiometry on the energy storage properties of 0.93KNN–0.07BixMN relaxor ferroelectrics
url	https://doi.org/10.1142/S2010135X18300062 https://doaj.org/article/acba23f58765485dac4598e3c38c3941 http://www.worldscientific.com/doi/pdf/10.1142/S2010135X18300062 https://doaj.org/toc/2010-135X https://doaj.org/toc/2010-1368
remote_bool	true
author2	Xiaoshuai Zhang Di Wu Xiaolian Chao Zupei Yang
author2Str	Xiaoshuai Zhang Di Wu Xiaolian Chao Zupei Yang
ppnlink	778146960
callnumber-subject	QC - Physics
mediatype_str_mv	c
isOA_txt	true
hochschulschrift_bool	false
doi_str	10.1142/S2010135X18300062
callnumber-a	QC501-721
up_date	2024-07-03T23:53:19.079Z
_version_	1803603986699255808
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ044634579</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230501190511.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230227s2018 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1142/S2010135X18300062</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ044634579</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJacba23f58765485dac4598e3c38c3941</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QC501-721</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Xiaoshuang Qiao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Influence of Bi nonstoichiometry on the energy storage properties of 0.93KNN–0.07BixMN relaxor ferroelectrics</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2018</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Ceramic-based dielectric capacitors are becoming more and more important in electronic devices. The ceramics of 0.93K0.5Na0.5NbO3–0.07Bix(Mg1∕3Nb2∕3)O3 (0.93KNN–0.07BixMN) (x=0.60, 2/3, 0.75 and 0.95) were successfully fabricated by virtue of the solid reaction process in this work. The results showed that the amount of Bi content has a significant impact on the ceramics of 0.93KNN–0.07BixMN. XRD indicates that all specimens exhibit a pure perovskite structure and existing oxygen vacancy in the specimens. The mean grain size for all specimens belong to submicron scale, and the sample of x=0.95 owns the smallest grain size is 0.11μm. The maximum dielectric constant increases but the phase transition temperature Tm exhibits a contrary tendency at 1MHz with increasing Bi concentration. Besides, all ceramics are relaxor ferroelectric. The impedance analysis further revealed that the activation energy of the ceramics increases with Bi content. Eventually, the highest η of 58.8% and Wrec of 1.30J/cm3 are simultaneously achieved in the sample with x=0.60. Overall, we demonstrate in this work that stoichiometry control of Bi in 0.93KNN–0.07BixMN ceramics is a practical method to obtain the desired structural, dielectric and energy storage properties.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Oxygen vacancy</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">nonstoichiometry</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">energy storage</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Electricity</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Xiaoshuai Zhang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Di Wu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Xiaolian Chao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Zupei Yang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">Journal of Advanced Dielectrics</subfield><subfield code="d">World Scientific Publishing, 2018</subfield><subfield code="g">8(2018), 6, Seite 1830006-1-1830006-9</subfield><subfield code="w">(DE-627)778146960</subfield><subfield code="w">(DE-600)2756564-6</subfield><subfield code="x">20101368</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:8</subfield><subfield code="g">year:2018</subfield><subfield code="g">number:6</subfield><subfield code="g">pages:1830006-1-1830006-9</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1142/S2010135X18300062</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/acba23f58765485dac4598e3c38c3941</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://www.worldscientific.com/doi/pdf/10.1142/S2010135X18300062</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2010-135X</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2010-1368</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">8</subfield><subfield code="j">2018</subfield><subfield code="e">6</subfield><subfield code="h">1830006-1-1830006-9</subfield></datafield></record></collection>
score	7.401473

Nicht das Richtige dabei?

Schreiben Sie uns!

Influence of Bi nonstoichiometry on the energy storage properties of 0.93KNN–0.07BixMN relaxor ferroelectrics

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?