CMOS MEMS Design and Fabrication Platform
This article mainly describes the technology related to the CMOS MEMS process platform provided by the Taiwan Semiconductor Research Institute (TSRI), including the process flow, design verification, back-end dicing, and packaging of the CMOS MEMS integrated sensing single chip. The front-end CMOS p...
Ausführliche Beschreibung
Autor*in: |
Sheng-Hsiang Tseng [verfasserIn] |
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E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2022 |
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In: Frontiers in Mechanical Engineering - Frontiers Media S.A., 2016, 8(2022) |
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Übergeordnetes Werk: |
volume:8 ; year:2022 |
Links: |
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DOI / URN: |
10.3389/fmech.2022.894484 |
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Katalog-ID: |
DOAJ044921527 |
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10.3389/fmech.2022.894484 doi (DE-627)DOAJ044921527 (DE-599)DOAJe98c9b4b97b247d6aecff1657763bfea DE-627 ger DE-627 rakwb eng TJ1-1570 Sheng-Hsiang Tseng verfasserin aut CMOS MEMS Design and Fabrication Platform 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This article mainly describes the technology related to the CMOS MEMS process platform provided by the Taiwan Semiconductor Research Institute (TSRI), including the process flow, design verification, back-end dicing, and packaging of the CMOS MEMS integrated sensing single chip. The front-end CMOS processes can be a standard 0.35 or 0.18 µm CMOS process, or even a BCD high-voltage process. Some academic designs also utilize this platform for in-house post-CMOS process. Finally, the article also explains in detail the CMOS MEMS design flowchart and implementation method provided by TSRI. CMOS MEMS design platform accelerometer post-CMOS single-chip Mechanical engineering and machinery In Frontiers in Mechanical Engineering Frontiers Media S.A., 2016 8(2022) (DE-627)835892271 (DE-600)2835636-6 22973079 nnns volume:8 year:2022 https://doi.org/10.3389/fmech.2022.894484 kostenfrei https://doaj.org/article/e98c9b4b97b247d6aecff1657763bfea kostenfrei https://www.frontiersin.org/articles/10.3389/fmech.2022.894484/full kostenfrei https://doaj.org/toc/2297-3079 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2003 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 8 2022 |
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10.3389/fmech.2022.894484 doi (DE-627)DOAJ044921527 (DE-599)DOAJe98c9b4b97b247d6aecff1657763bfea DE-627 ger DE-627 rakwb eng TJ1-1570 Sheng-Hsiang Tseng verfasserin aut CMOS MEMS Design and Fabrication Platform 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This article mainly describes the technology related to the CMOS MEMS process platform provided by the Taiwan Semiconductor Research Institute (TSRI), including the process flow, design verification, back-end dicing, and packaging of the CMOS MEMS integrated sensing single chip. The front-end CMOS processes can be a standard 0.35 or 0.18 µm CMOS process, or even a BCD high-voltage process. Some academic designs also utilize this platform for in-house post-CMOS process. Finally, the article also explains in detail the CMOS MEMS design flowchart and implementation method provided by TSRI. CMOS MEMS design platform accelerometer post-CMOS single-chip Mechanical engineering and machinery In Frontiers in Mechanical Engineering Frontiers Media S.A., 2016 8(2022) (DE-627)835892271 (DE-600)2835636-6 22973079 nnns volume:8 year:2022 https://doi.org/10.3389/fmech.2022.894484 kostenfrei https://doaj.org/article/e98c9b4b97b247d6aecff1657763bfea kostenfrei https://www.frontiersin.org/articles/10.3389/fmech.2022.894484/full kostenfrei https://doaj.org/toc/2297-3079 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2003 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 8 2022 |
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10.3389/fmech.2022.894484 doi (DE-627)DOAJ044921527 (DE-599)DOAJe98c9b4b97b247d6aecff1657763bfea DE-627 ger DE-627 rakwb eng TJ1-1570 Sheng-Hsiang Tseng verfasserin aut CMOS MEMS Design and Fabrication Platform 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This article mainly describes the technology related to the CMOS MEMS process platform provided by the Taiwan Semiconductor Research Institute (TSRI), including the process flow, design verification, back-end dicing, and packaging of the CMOS MEMS integrated sensing single chip. The front-end CMOS processes can be a standard 0.35 or 0.18 µm CMOS process, or even a BCD high-voltage process. Some academic designs also utilize this platform for in-house post-CMOS process. Finally, the article also explains in detail the CMOS MEMS design flowchart and implementation method provided by TSRI. CMOS MEMS design platform accelerometer post-CMOS single-chip Mechanical engineering and machinery In Frontiers in Mechanical Engineering Frontiers Media S.A., 2016 8(2022) (DE-627)835892271 (DE-600)2835636-6 22973079 nnns volume:8 year:2022 https://doi.org/10.3389/fmech.2022.894484 kostenfrei https://doaj.org/article/e98c9b4b97b247d6aecff1657763bfea kostenfrei https://www.frontiersin.org/articles/10.3389/fmech.2022.894484/full kostenfrei https://doaj.org/toc/2297-3079 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2003 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 8 2022 |
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This article mainly describes the technology related to the CMOS MEMS process platform provided by the Taiwan Semiconductor Research Institute (TSRI), including the process flow, design verification, back-end dicing, and packaging of the CMOS MEMS integrated sensing single chip. The front-end CMOS processes can be a standard 0.35 or 0.18 µm CMOS process, or even a BCD high-voltage process. Some academic designs also utilize this platform for in-house post-CMOS process. Finally, the article also explains in detail the CMOS MEMS design flowchart and implementation method provided by TSRI. |
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This article mainly describes the technology related to the CMOS MEMS process platform provided by the Taiwan Semiconductor Research Institute (TSRI), including the process flow, design verification, back-end dicing, and packaging of the CMOS MEMS integrated sensing single chip. The front-end CMOS processes can be a standard 0.35 or 0.18 µm CMOS process, or even a BCD high-voltage process. Some academic designs also utilize this platform for in-house post-CMOS process. Finally, the article also explains in detail the CMOS MEMS design flowchart and implementation method provided by TSRI. |
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This article mainly describes the technology related to the CMOS MEMS process platform provided by the Taiwan Semiconductor Research Institute (TSRI), including the process flow, design verification, back-end dicing, and packaging of the CMOS MEMS integrated sensing single chip. The front-end CMOS processes can be a standard 0.35 or 0.18 µm CMOS process, or even a BCD high-voltage process. Some academic designs also utilize this platform for in-house post-CMOS process. Finally, the article also explains in detail the CMOS MEMS design flowchart and implementation method provided by TSRI. |
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CMOS MEMS Design and Fabrication Platform |
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