Ultra-Low Power CMOS Readout for Resonant MEMS Strain Sensors

This paper presents an ultra-low power, silicon-integrated readout for resonant MEMS strain sensors. The analogue readout implements a negative-resistance amplifier based on first-generation current conveyors (CCI) that, thanks to the reduced number of active elements, targets both low-power and low...
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Autor*in:	Marco Crescentini [verfasserIn] Cinzia Tamburini [verfasserIn] Luca Belsito [verfasserIn] Aldo Romani [verfasserIn] Alberto Roncaglia [verfasserIn] Marco Tartagni [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2018

Schlagwörter:	DETF MEMS readout circuit strain sensor current conveyor

Übergeordnetes Werk:	In: Proceedings - MDPI AG, 2018, 2(2018), 13, p 973
Übergeordnetes Werk:	volume:2 ; year:2018 ; number:13, p 973

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/proceedings2130973

Katalog-ID:	DOAJ045171661

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spelling	10.3390/proceedings2130973 doi (DE-627)DOAJ045171661 (DE-599)DOAJ1323e11f543a4d8395a616822928b00d DE-627 ger DE-627 rakwb eng Marco Crescentini verfasserin aut Ultra-Low Power CMOS Readout for Resonant MEMS Strain Sensors 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper presents an ultra-low power, silicon-integrated readout for resonant MEMS strain sensors. The analogue readout implements a negative-resistance amplifier based on first-generation current conveyors (CCI) that, thanks to the reduced number of active elements, targets both low-power and low-noise. A prototype of the circuit was implemented in a 0.18-µm technology occupying less than 0.4 mm2 and consuming only 9 µA from the 1.8-V power supply. The prototype was earliest tested by connecting it to a resonant MEMS strain resonator. DETF MEMS readout circuit strain sensor current conveyor General Works A Cinzia Tamburini verfasserin aut Luca Belsito verfasserin aut Aldo Romani verfasserin aut Alberto Roncaglia verfasserin aut Marco Tartagni verfasserin aut In Proceedings MDPI AG, 2018 2(2018), 13, p 973 (DE-627)896671828 (DE-600)2904077-2 25043900 nnns volume:2 year:2018 number:13, p 973 https://doi.org/10.3390/proceedings2130973 kostenfrei https://doaj.org/article/1323e11f543a4d8395a616822928b00d kostenfrei https://www.mdpi.com/2504-3900/2/13/973 kostenfrei https://doaj.org/toc/2504-3900 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 2 2018 13, p 973
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allfieldsSound	10.3390/proceedings2130973 doi (DE-627)DOAJ045171661 (DE-599)DOAJ1323e11f543a4d8395a616822928b00d DE-627 ger DE-627 rakwb eng Marco Crescentini verfasserin aut Ultra-Low Power CMOS Readout for Resonant MEMS Strain Sensors 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper presents an ultra-low power, silicon-integrated readout for resonant MEMS strain sensors. The analogue readout implements a negative-resistance amplifier based on first-generation current conveyors (CCI) that, thanks to the reduced number of active elements, targets both low-power and low-noise. A prototype of the circuit was implemented in a 0.18-µm technology occupying less than 0.4 mm2 and consuming only 9 µA from the 1.8-V power supply. The prototype was earliest tested by connecting it to a resonant MEMS strain resonator. DETF MEMS readout circuit strain sensor current conveyor General Works A Cinzia Tamburini verfasserin aut Luca Belsito verfasserin aut Aldo Romani verfasserin aut Alberto Roncaglia verfasserin aut Marco Tartagni verfasserin aut In Proceedings MDPI AG, 2018 2(2018), 13, p 973 (DE-627)896671828 (DE-600)2904077-2 25043900 nnns volume:2 year:2018 number:13, p 973 https://doi.org/10.3390/proceedings2130973 kostenfrei https://doaj.org/article/1323e11f543a4d8395a616822928b00d kostenfrei https://www.mdpi.com/2504-3900/2/13/973 kostenfrei https://doaj.org/toc/2504-3900 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 2 2018 13, p 973
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author	Marco Crescentini
spellingShingle	Marco Crescentini misc DETF misc MEMS misc readout circuit misc strain sensor misc current conveyor misc General Works misc A Ultra-Low Power CMOS Readout for Resonant MEMS Strain Sensors
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topic_title	Ultra-Low Power CMOS Readout for Resonant MEMS Strain Sensors DETF MEMS readout circuit strain sensor current conveyor
topic	misc DETF misc MEMS misc readout circuit misc strain sensor misc current conveyor misc General Works misc A
topic_unstemmed	misc DETF misc MEMS misc readout circuit misc strain sensor misc current conveyor misc General Works misc A
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title	Ultra-Low Power CMOS Readout for Resonant MEMS Strain Sensors
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title_full	Ultra-Low Power CMOS Readout for Resonant MEMS Strain Sensors
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author_browse	Marco Crescentini Cinzia Tamburini Luca Belsito Aldo Romani Alberto Roncaglia Marco Tartagni
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title_sort	ultra-low power cmos readout for resonant mems strain sensors
title_auth	Ultra-Low Power CMOS Readout for Resonant MEMS Strain Sensors
abstract	This paper presents an ultra-low power, silicon-integrated readout for resonant MEMS strain sensors. The analogue readout implements a negative-resistance amplifier based on first-generation current conveyors (CCI) that, thanks to the reduced number of active elements, targets both low-power and low-noise. A prototype of the circuit was implemented in a 0.18-µm technology occupying less than 0.4 mm2 and consuming only 9 µA from the 1.8-V power supply. The prototype was earliest tested by connecting it to a resonant MEMS strain resonator.
abstractGer	This paper presents an ultra-low power, silicon-integrated readout for resonant MEMS strain sensors. The analogue readout implements a negative-resistance amplifier based on first-generation current conveyors (CCI) that, thanks to the reduced number of active elements, targets both low-power and low-noise. A prototype of the circuit was implemented in a 0.18-µm technology occupying less than 0.4 mm2 and consuming only 9 µA from the 1.8-V power supply. The prototype was earliest tested by connecting it to a resonant MEMS strain resonator.
abstract_unstemmed	This paper presents an ultra-low power, silicon-integrated readout for resonant MEMS strain sensors. The analogue readout implements a negative-resistance amplifier based on first-generation current conveyors (CCI) that, thanks to the reduced number of active elements, targets both low-power and low-noise. A prototype of the circuit was implemented in a 0.18-µm technology occupying less than 0.4 mm2 and consuming only 9 µA from the 1.8-V power supply. The prototype was earliest tested by connecting it to a resonant MEMS strain resonator.
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title_short	Ultra-Low Power CMOS Readout for Resonant MEMS Strain Sensors
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author2	Cinzia Tamburini Luca Belsito Aldo Romani Alberto Roncaglia Marco Tartagni
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up_date	2024-07-03T13:24:18.798Z
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