Facile and Reliable Thickness Identification of Atomically Thin Dichalcogenide Semiconductors Using Hyperspectral Microscopy

Although large-scale synthesis of layered two-dimensional (2D) transition metal dichalcogenides (TMDCs) has been made possible, mechanical exfoliation of layered van der Waals crystal is still indispensable as every new material research starts with exfoliated flakes. However, it is often a tedious...
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Autor*in:	Yu-Chung Chang [verfasserIn] Yu-Kai Wang [verfasserIn] Yen-Ting Chen [verfasserIn] Der-Yuh Lin [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2020

Schlagwörter:	2d materials transition metal dichalcogenides (tmdcs) hyperspectral microscopy thickness identification mos mose ws wse sns snse

Übergeordnetes Werk:	In: Nanomaterials - MDPI AG, 2012, 10(2020), 3, p 526
Übergeordnetes Werk:	volume:10 ; year:2020 ; number:3, p 526

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/nano10030526

Katalog-ID:	DOAJ045900213

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520			\|a Although large-scale synthesis of layered two-dimensional (2D) transition metal dichalcogenides (TMDCs) has been made possible, mechanical exfoliation of layered van der Waals crystal is still indispensable as every new material research starts with exfoliated flakes. However, it is often a tedious task to find the flakes with desired thickness and sizes. We propose a method to determine the thickness of few-layer flakes and facilitate the fast searching of flakes with a specific thickness. By using hyperspectral wild field microscopy to acquire differential reflectance and transmittance spectra, we demonstrate unambiguous recognition of typical TMDCs and their thicknesses based on their excitonic resonance features in a single step. Distinct from Raman spectroscopy or atomic force microscopy, our method is non-destructive to the sample. By knowing the contrast between different layers, we developed an algorithm to automatically search for flakes of desired thickness in situ. We extended this method to measure tin dichalcogenides, such as SnS<sub<2</sub< and SnSe<sub<2</sub<, which are indirect bandgap semiconductors regardless of the thickness. We observed distinct spectroscopic behaviors as compared with typical TMDCs. Layer-dependent excitonic features were manifested. Our method is ideal for automatic non-destructive optical inspection in mass production in the semiconductor industry.
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topic_facet	2d materials transition metal dichalcogenides (tmdcs) hyperspectral microscopy thickness identification mos<sub<2</sub< mose<sub<2</sub< ws<sub<2</sub< wse<sub<2</sub< sns<sub<2</sub< snse<sub<2</sub< Chemistry
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callnumber-first	Q - Science
author	Yu-Chung Chang
spellingShingle	Yu-Chung Chang misc QD1-999 misc 2d materials misc transition metal dichalcogenides (tmdcs) misc hyperspectral microscopy misc thickness identification misc mos<sub<2</sub< misc mose<sub<2</sub< misc ws<sub<2</sub< misc wse<sub<2</sub< misc sns<sub<2</sub< misc snse<sub<2</sub< misc Chemistry Facile and Reliable Thickness Identification of Atomically Thin Dichalcogenide Semiconductors Using Hyperspectral Microscopy
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topic_title	QD1-999 Facile and Reliable Thickness Identification of Atomically Thin Dichalcogenide Semiconductors Using Hyperspectral Microscopy 2d materials transition metal dichalcogenides (tmdcs) hyperspectral microscopy thickness identification mos<sub<2</sub< mose<sub<2</sub< ws<sub<2</sub< wse<sub<2</sub< sns<sub<2</sub< snse<sub<2</sub<
topic	misc QD1-999 misc 2d materials misc transition metal dichalcogenides (tmdcs) misc hyperspectral microscopy misc thickness identification misc mos<sub<2</sub< misc mose<sub<2</sub< misc ws<sub<2</sub< misc wse<sub<2</sub< misc sns<sub<2</sub< misc snse<sub<2</sub< misc Chemistry
topic_unstemmed	misc QD1-999 misc 2d materials misc transition metal dichalcogenides (tmdcs) misc hyperspectral microscopy misc thickness identification misc mos<sub<2</sub< misc mose<sub<2</sub< misc ws<sub<2</sub< misc wse<sub<2</sub< misc sns<sub<2</sub< misc snse<sub<2</sub< misc Chemistry
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title	Facile and Reliable Thickness Identification of Atomically Thin Dichalcogenide Semiconductors Using Hyperspectral Microscopy
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title_full	Facile and Reliable Thickness Identification of Atomically Thin Dichalcogenide Semiconductors Using Hyperspectral Microscopy
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title_sort	facile and reliable thickness identification of atomically thin dichalcogenide semiconductors using hyperspectral microscopy
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title_auth	Facile and Reliable Thickness Identification of Atomically Thin Dichalcogenide Semiconductors Using Hyperspectral Microscopy
abstract	Although large-scale synthesis of layered two-dimensional (2D) transition metal dichalcogenides (TMDCs) has been made possible, mechanical exfoliation of layered van der Waals crystal is still indispensable as every new material research starts with exfoliated flakes. However, it is often a tedious task to find the flakes with desired thickness and sizes. We propose a method to determine the thickness of few-layer flakes and facilitate the fast searching of flakes with a specific thickness. By using hyperspectral wild field microscopy to acquire differential reflectance and transmittance spectra, we demonstrate unambiguous recognition of typical TMDCs and their thicknesses based on their excitonic resonance features in a single step. Distinct from Raman spectroscopy or atomic force microscopy, our method is non-destructive to the sample. By knowing the contrast between different layers, we developed an algorithm to automatically search for flakes of desired thickness in situ. We extended this method to measure tin dichalcogenides, such as SnS<sub<2</sub< and SnSe<sub<2</sub<, which are indirect bandgap semiconductors regardless of the thickness. We observed distinct spectroscopic behaviors as compared with typical TMDCs. Layer-dependent excitonic features were manifested. Our method is ideal for automatic non-destructive optical inspection in mass production in the semiconductor industry.
abstractGer	Although large-scale synthesis of layered two-dimensional (2D) transition metal dichalcogenides (TMDCs) has been made possible, mechanical exfoliation of layered van der Waals crystal is still indispensable as every new material research starts with exfoliated flakes. However, it is often a tedious task to find the flakes with desired thickness and sizes. We propose a method to determine the thickness of few-layer flakes and facilitate the fast searching of flakes with a specific thickness. By using hyperspectral wild field microscopy to acquire differential reflectance and transmittance spectra, we demonstrate unambiguous recognition of typical TMDCs and their thicknesses based on their excitonic resonance features in a single step. Distinct from Raman spectroscopy or atomic force microscopy, our method is non-destructive to the sample. By knowing the contrast between different layers, we developed an algorithm to automatically search for flakes of desired thickness in situ. We extended this method to measure tin dichalcogenides, such as SnS<sub<2</sub< and SnSe<sub<2</sub<, which are indirect bandgap semiconductors regardless of the thickness. We observed distinct spectroscopic behaviors as compared with typical TMDCs. Layer-dependent excitonic features were manifested. Our method is ideal for automatic non-destructive optical inspection in mass production in the semiconductor industry.
abstract_unstemmed	Although large-scale synthesis of layered two-dimensional (2D) transition metal dichalcogenides (TMDCs) has been made possible, mechanical exfoliation of layered van der Waals crystal is still indispensable as every new material research starts with exfoliated flakes. However, it is often a tedious task to find the flakes with desired thickness and sizes. We propose a method to determine the thickness of few-layer flakes and facilitate the fast searching of flakes with a specific thickness. By using hyperspectral wild field microscopy to acquire differential reflectance and transmittance spectra, we demonstrate unambiguous recognition of typical TMDCs and their thicknesses based on their excitonic resonance features in a single step. Distinct from Raman spectroscopy or atomic force microscopy, our method is non-destructive to the sample. By knowing the contrast between different layers, we developed an algorithm to automatically search for flakes of desired thickness in situ. We extended this method to measure tin dichalcogenides, such as SnS<sub<2</sub< and SnSe<sub<2</sub<, which are indirect bandgap semiconductors regardless of the thickness. We observed distinct spectroscopic behaviors as compared with typical TMDCs. Layer-dependent excitonic features were manifested. Our method is ideal for automatic non-destructive optical inspection in mass production in the semiconductor industry.
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title_short	Facile and Reliable Thickness Identification of Atomically Thin Dichalcogenide Semiconductors Using Hyperspectral Microscopy
url	https://doi.org/10.3390/nano10030526 https://doaj.org/article/ac19d4c7ef5341d6af640743cc80780a https://www.mdpi.com/2079-4991/10/3/526 https://doaj.org/toc/2079-4991
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Facile and Reliable Thickness Identification of Atomically Thin Dichalcogenide Semiconductors Using Hyperspectral Microscopy

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