Analysis of the Failure and Performance Variation Mechanism of MEMS Suspended Inductors with Auxiliary Pillars under High-g Shock
Microelectromechanical systems (MEMS) suspended inductors have excellent radio frequency (RF) performance and they are compatible with integrated circuit (IC). They will be shocked during manufacturing, transportation, and operation; in some applications, the shock amplitude can be as high as tens o...
Ausführliche Beschreibung
Autor*in: |
Lixin Xu [verfasserIn] Yiyuan Li [verfasserIn] Jianhua Li [verfasserIn] |
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Format: |
E-Artikel |
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Sprache: |
Englisch |
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2020 |
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Übergeordnetes Werk: |
In: Micromachines - MDPI AG, 2010, 11(2020), 11, p 957 |
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Übergeordnetes Werk: |
volume:11 ; year:2020 ; number:11, p 957 |
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DOI / URN: |
10.3390/mi11110957 |
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Katalog-ID: |
DOAJ045997993 |
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10.3390/mi11110957 doi (DE-627)DOAJ045997993 (DE-599)DOAJ2aaec4a5607048edab60797a8ab89afe DE-627 ger DE-627 rakwb eng TJ1-1570 Lixin Xu verfasserin aut Analysis of the Failure and Performance Variation Mechanism of MEMS Suspended Inductors with Auxiliary Pillars under High-g Shock 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Microelectromechanical systems (MEMS) suspended inductors have excellent radio frequency (RF) performance and they are compatible with integrated circuit (IC). They will be shocked during manufacturing, transportation, and operation; in some applications, the shock amplitude can be as high as tens of thousands of gravitational acceleration (g, 9.8 m/s<sup<2</sup<). High-g shock will lead to the inductor deformation which affects its performance or even failure of the inductor structure. However, few studies have been carried out on the inductors under high-g shock. In this study, a kind of MEMS suspended inductor with excellent RF and mechanical performance is designed and fabricated. The failure and performance variation mechanism of the inductor under high-g shock is analyzed by measuring and comparing the performance measurement results and the π model parameters extraction results of the inductors before and after air cannon shock test. The results show that the increase of energy loss caused by substrate parasitic effect and the properties variation of the coil material affected by high-g shock are the main reasons for the decrease of RF performance parameters, and the critical stress exceeding the interlayer adhesion is the main reason for the failure of the inductor. microelectromechanical systems (MEMS) suspended inductor high mechanical shock MEMS reliability Mechanical engineering and machinery Yiyuan Li verfasserin aut Jianhua Li verfasserin aut In Micromachines MDPI AG, 2010 11(2020), 11, p 957 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:11 year:2020 number:11, p 957 https://doi.org/10.3390/mi11110957 kostenfrei https://doaj.org/article/2aaec4a5607048edab60797a8ab89afe kostenfrei https://www.mdpi.com/2072-666X/11/11/957 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2020 11, p 957 |
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10.3390/mi11110957 doi (DE-627)DOAJ045997993 (DE-599)DOAJ2aaec4a5607048edab60797a8ab89afe DE-627 ger DE-627 rakwb eng TJ1-1570 Lixin Xu verfasserin aut Analysis of the Failure and Performance Variation Mechanism of MEMS Suspended Inductors with Auxiliary Pillars under High-g Shock 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Microelectromechanical systems (MEMS) suspended inductors have excellent radio frequency (RF) performance and they are compatible with integrated circuit (IC). They will be shocked during manufacturing, transportation, and operation; in some applications, the shock amplitude can be as high as tens of thousands of gravitational acceleration (g, 9.8 m/s<sup<2</sup<). High-g shock will lead to the inductor deformation which affects its performance or even failure of the inductor structure. However, few studies have been carried out on the inductors under high-g shock. In this study, a kind of MEMS suspended inductor with excellent RF and mechanical performance is designed and fabricated. The failure and performance variation mechanism of the inductor under high-g shock is analyzed by measuring and comparing the performance measurement results and the π model parameters extraction results of the inductors before and after air cannon shock test. The results show that the increase of energy loss caused by substrate parasitic effect and the properties variation of the coil material affected by high-g shock are the main reasons for the decrease of RF performance parameters, and the critical stress exceeding the interlayer adhesion is the main reason for the failure of the inductor. microelectromechanical systems (MEMS) suspended inductor high mechanical shock MEMS reliability Mechanical engineering and machinery Yiyuan Li verfasserin aut Jianhua Li verfasserin aut In Micromachines MDPI AG, 2010 11(2020), 11, p 957 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:11 year:2020 number:11, p 957 https://doi.org/10.3390/mi11110957 kostenfrei https://doaj.org/article/2aaec4a5607048edab60797a8ab89afe kostenfrei https://www.mdpi.com/2072-666X/11/11/957 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2020 11, p 957 |
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10.3390/mi11110957 doi (DE-627)DOAJ045997993 (DE-599)DOAJ2aaec4a5607048edab60797a8ab89afe DE-627 ger DE-627 rakwb eng TJ1-1570 Lixin Xu verfasserin aut Analysis of the Failure and Performance Variation Mechanism of MEMS Suspended Inductors with Auxiliary Pillars under High-g Shock 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Microelectromechanical systems (MEMS) suspended inductors have excellent radio frequency (RF) performance and they are compatible with integrated circuit (IC). They will be shocked during manufacturing, transportation, and operation; in some applications, the shock amplitude can be as high as tens of thousands of gravitational acceleration (g, 9.8 m/s<sup<2</sup<). High-g shock will lead to the inductor deformation which affects its performance or even failure of the inductor structure. However, few studies have been carried out on the inductors under high-g shock. In this study, a kind of MEMS suspended inductor with excellent RF and mechanical performance is designed and fabricated. The failure and performance variation mechanism of the inductor under high-g shock is analyzed by measuring and comparing the performance measurement results and the π model parameters extraction results of the inductors before and after air cannon shock test. The results show that the increase of energy loss caused by substrate parasitic effect and the properties variation of the coil material affected by high-g shock are the main reasons for the decrease of RF performance parameters, and the critical stress exceeding the interlayer adhesion is the main reason for the failure of the inductor. microelectromechanical systems (MEMS) suspended inductor high mechanical shock MEMS reliability Mechanical engineering and machinery Yiyuan Li verfasserin aut Jianhua Li verfasserin aut In Micromachines MDPI AG, 2010 11(2020), 11, p 957 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:11 year:2020 number:11, p 957 https://doi.org/10.3390/mi11110957 kostenfrei https://doaj.org/article/2aaec4a5607048edab60797a8ab89afe kostenfrei https://www.mdpi.com/2072-666X/11/11/957 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2020 11, p 957 |
allfieldsGer |
10.3390/mi11110957 doi (DE-627)DOAJ045997993 (DE-599)DOAJ2aaec4a5607048edab60797a8ab89afe DE-627 ger DE-627 rakwb eng TJ1-1570 Lixin Xu verfasserin aut Analysis of the Failure and Performance Variation Mechanism of MEMS Suspended Inductors with Auxiliary Pillars under High-g Shock 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Microelectromechanical systems (MEMS) suspended inductors have excellent radio frequency (RF) performance and they are compatible with integrated circuit (IC). They will be shocked during manufacturing, transportation, and operation; in some applications, the shock amplitude can be as high as tens of thousands of gravitational acceleration (g, 9.8 m/s<sup<2</sup<). High-g shock will lead to the inductor deformation which affects its performance or even failure of the inductor structure. However, few studies have been carried out on the inductors under high-g shock. In this study, a kind of MEMS suspended inductor with excellent RF and mechanical performance is designed and fabricated. The failure and performance variation mechanism of the inductor under high-g shock is analyzed by measuring and comparing the performance measurement results and the π model parameters extraction results of the inductors before and after air cannon shock test. The results show that the increase of energy loss caused by substrate parasitic effect and the properties variation of the coil material affected by high-g shock are the main reasons for the decrease of RF performance parameters, and the critical stress exceeding the interlayer adhesion is the main reason for the failure of the inductor. microelectromechanical systems (MEMS) suspended inductor high mechanical shock MEMS reliability Mechanical engineering and machinery Yiyuan Li verfasserin aut Jianhua Li verfasserin aut In Micromachines MDPI AG, 2010 11(2020), 11, p 957 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:11 year:2020 number:11, p 957 https://doi.org/10.3390/mi11110957 kostenfrei https://doaj.org/article/2aaec4a5607048edab60797a8ab89afe kostenfrei https://www.mdpi.com/2072-666X/11/11/957 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2020 11, p 957 |
allfieldsSound |
10.3390/mi11110957 doi (DE-627)DOAJ045997993 (DE-599)DOAJ2aaec4a5607048edab60797a8ab89afe DE-627 ger DE-627 rakwb eng TJ1-1570 Lixin Xu verfasserin aut Analysis of the Failure and Performance Variation Mechanism of MEMS Suspended Inductors with Auxiliary Pillars under High-g Shock 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Microelectromechanical systems (MEMS) suspended inductors have excellent radio frequency (RF) performance and they are compatible with integrated circuit (IC). They will be shocked during manufacturing, transportation, and operation; in some applications, the shock amplitude can be as high as tens of thousands of gravitational acceleration (g, 9.8 m/s<sup<2</sup<). High-g shock will lead to the inductor deformation which affects its performance or even failure of the inductor structure. However, few studies have been carried out on the inductors under high-g shock. In this study, a kind of MEMS suspended inductor with excellent RF and mechanical performance is designed and fabricated. The failure and performance variation mechanism of the inductor under high-g shock is analyzed by measuring and comparing the performance measurement results and the π model parameters extraction results of the inductors before and after air cannon shock test. The results show that the increase of energy loss caused by substrate parasitic effect and the properties variation of the coil material affected by high-g shock are the main reasons for the decrease of RF performance parameters, and the critical stress exceeding the interlayer adhesion is the main reason for the failure of the inductor. microelectromechanical systems (MEMS) suspended inductor high mechanical shock MEMS reliability Mechanical engineering and machinery Yiyuan Li verfasserin aut Jianhua Li verfasserin aut In Micromachines MDPI AG, 2010 11(2020), 11, p 957 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:11 year:2020 number:11, p 957 https://doi.org/10.3390/mi11110957 kostenfrei https://doaj.org/article/2aaec4a5607048edab60797a8ab89afe kostenfrei https://www.mdpi.com/2072-666X/11/11/957 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2020 11, p 957 |
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They will be shocked during manufacturing, transportation, and operation; in some applications, the shock amplitude can be as high as tens of thousands of gravitational acceleration (g, 9.8 m/s<sup<2</sup<). High-g shock will lead to the inductor deformation which affects its performance or even failure of the inductor structure. However, few studies have been carried out on the inductors under high-g shock. In this study, a kind of MEMS suspended inductor with excellent RF and mechanical performance is designed and fabricated. The failure and performance variation mechanism of the inductor under high-g shock is analyzed by measuring and comparing the performance measurement results and the π model parameters extraction results of the inductors before and after air cannon shock test. 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Lixin Xu misc TJ1-1570 misc microelectromechanical systems (MEMS) suspended inductor misc high mechanical shock misc MEMS reliability misc Mechanical engineering and machinery Analysis of the Failure and Performance Variation Mechanism of MEMS Suspended Inductors with Auxiliary Pillars under High-g Shock |
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Analysis of the Failure and Performance Variation Mechanism of MEMS Suspended Inductors with Auxiliary Pillars under High-g Shock |
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Microelectromechanical systems (MEMS) suspended inductors have excellent radio frequency (RF) performance and they are compatible with integrated circuit (IC). They will be shocked during manufacturing, transportation, and operation; in some applications, the shock amplitude can be as high as tens of thousands of gravitational acceleration (g, 9.8 m/s<sup<2</sup<). High-g shock will lead to the inductor deformation which affects its performance or even failure of the inductor structure. However, few studies have been carried out on the inductors under high-g shock. In this study, a kind of MEMS suspended inductor with excellent RF and mechanical performance is designed and fabricated. The failure and performance variation mechanism of the inductor under high-g shock is analyzed by measuring and comparing the performance measurement results and the π model parameters extraction results of the inductors before and after air cannon shock test. The results show that the increase of energy loss caused by substrate parasitic effect and the properties variation of the coil material affected by high-g shock are the main reasons for the decrease of RF performance parameters, and the critical stress exceeding the interlayer adhesion is the main reason for the failure of the inductor. |
abstractGer |
Microelectromechanical systems (MEMS) suspended inductors have excellent radio frequency (RF) performance and they are compatible with integrated circuit (IC). They will be shocked during manufacturing, transportation, and operation; in some applications, the shock amplitude can be as high as tens of thousands of gravitational acceleration (g, 9.8 m/s<sup<2</sup<). High-g shock will lead to the inductor deformation which affects its performance or even failure of the inductor structure. However, few studies have been carried out on the inductors under high-g shock. In this study, a kind of MEMS suspended inductor with excellent RF and mechanical performance is designed and fabricated. The failure and performance variation mechanism of the inductor under high-g shock is analyzed by measuring and comparing the performance measurement results and the π model parameters extraction results of the inductors before and after air cannon shock test. The results show that the increase of energy loss caused by substrate parasitic effect and the properties variation of the coil material affected by high-g shock are the main reasons for the decrease of RF performance parameters, and the critical stress exceeding the interlayer adhesion is the main reason for the failure of the inductor. |
abstract_unstemmed |
Microelectromechanical systems (MEMS) suspended inductors have excellent radio frequency (RF) performance and they are compatible with integrated circuit (IC). They will be shocked during manufacturing, transportation, and operation; in some applications, the shock amplitude can be as high as tens of thousands of gravitational acceleration (g, 9.8 m/s<sup<2</sup<). High-g shock will lead to the inductor deformation which affects its performance or even failure of the inductor structure. However, few studies have been carried out on the inductors under high-g shock. In this study, a kind of MEMS suspended inductor with excellent RF and mechanical performance is designed and fabricated. The failure and performance variation mechanism of the inductor under high-g shock is analyzed by measuring and comparing the performance measurement results and the π model parameters extraction results of the inductors before and after air cannon shock test. The results show that the increase of energy loss caused by substrate parasitic effect and the properties variation of the coil material affected by high-g shock are the main reasons for the decrease of RF performance parameters, and the critical stress exceeding the interlayer adhesion is the main reason for the failure of the inductor. |
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Analysis of the Failure and Performance Variation Mechanism of MEMS Suspended Inductors with Auxiliary Pillars under High-g Shock |
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https://doi.org/10.3390/mi11110957 https://doaj.org/article/2aaec4a5607048edab60797a8ab89afe https://www.mdpi.com/2072-666X/11/11/957 https://doaj.org/toc/2072-666X |
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