Electric field modulation of spin transport

The finite spin lifetime in solids is often considered a major hindrance for the development of spintronic devices, which typically require cryogenic temperatures to mitigate this phenomenon. In this work, we show that this feature can instead be exploited to realize a scheme where spin transport is...
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Autor*in:	C. Zucchetti [verfasserIn] A. Marchionni [verfasserIn] M. Bollani [verfasserIn] F. Ciccacci [verfasserIn] M. Finazzi [verfasserIn] F. Bottegoni [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2022

Übergeordnetes Werk:	In: APL Materials - AIP Publishing LLC, 2013, 10(2022), 1, Seite 011102-011102-5
Übergeordnetes Werk:	volume:10 ; year:2022 ; number:1 ; pages:011102-011102-5

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.1063/5.0073180

Katalog-ID:	DOAJ047772433

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520			\|a The finite spin lifetime in solids is often considered a major hindrance for the development of spintronic devices, which typically require cryogenic temperatures to mitigate this phenomenon. In this work, we show that this feature can instead be exploited to realize a scheme where spin transport is modulated at room temperature by a modest electric field. A field directed antiparallel (parallel) to the spin-diffusion velocity can, in fact, largely increase (decrease) the spin-transport length compared with the zero field case. We find that applying an electric field E = 24 V/cm along a 40 μm-long path in germanium results in about one order of magnitude modulation of the spin-polarized electrons entering into the detector. This work demonstrates that electric fields can be exploited for guiding spins over macroscopic distances and for realizing fast room temperature modulation of spin accumulation.
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spelling	10.1063/5.0073180 doi (DE-627)DOAJ047772433 (DE-599)DOAJa1418db27b134c3f80a15be13089b2d7 DE-627 ger DE-627 rakwb eng TP248.13-248.65 QC1-999 C. Zucchetti verfasserin aut Electric field modulation of spin transport 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The finite spin lifetime in solids is often considered a major hindrance for the development of spintronic devices, which typically require cryogenic temperatures to mitigate this phenomenon. In this work, we show that this feature can instead be exploited to realize a scheme where spin transport is modulated at room temperature by a modest electric field. A field directed antiparallel (parallel) to the spin-diffusion velocity can, in fact, largely increase (decrease) the spin-transport length compared with the zero field case. We find that applying an electric field E = 24 V/cm along a 40 μm-long path in germanium results in about one order of magnitude modulation of the spin-polarized electrons entering into the detector. This work demonstrates that electric fields can be exploited for guiding spins over macroscopic distances and for realizing fast room temperature modulation of spin accumulation. Biotechnology Physics A. Marchionni verfasserin aut M. Bollani verfasserin aut F. Ciccacci verfasserin aut M. Finazzi verfasserin aut F. Bottegoni verfasserin aut In APL Materials AIP Publishing LLC, 2013 10(2022), 1, Seite 011102-011102-5 (DE-627)75109840X (DE-600)2722985-3 2166532X nnns volume:10 year:2022 number:1 pages:011102-011102-5 https://doi.org/10.1063/5.0073180 kostenfrei https://doaj.org/article/a1418db27b134c3f80a15be13089b2d7 kostenfrei http://dx.doi.org/10.1063/5.0073180 kostenfrei https://doaj.org/toc/2166-532X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2022 1 011102-011102-5
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allfieldsGer	10.1063/5.0073180 doi (DE-627)DOAJ047772433 (DE-599)DOAJa1418db27b134c3f80a15be13089b2d7 DE-627 ger DE-627 rakwb eng TP248.13-248.65 QC1-999 C. Zucchetti verfasserin aut Electric field modulation of spin transport 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The finite spin lifetime in solids is often considered a major hindrance for the development of spintronic devices, which typically require cryogenic temperatures to mitigate this phenomenon. In this work, we show that this feature can instead be exploited to realize a scheme where spin transport is modulated at room temperature by a modest electric field. A field directed antiparallel (parallel) to the spin-diffusion velocity can, in fact, largely increase (decrease) the spin-transport length compared with the zero field case. We find that applying an electric field E = 24 V/cm along a 40 μm-long path in germanium results in about one order of magnitude modulation of the spin-polarized electrons entering into the detector. This work demonstrates that electric fields can be exploited for guiding spins over macroscopic distances and for realizing fast room temperature modulation of spin accumulation. Biotechnology Physics A. Marchionni verfasserin aut M. Bollani verfasserin aut F. Ciccacci verfasserin aut M. Finazzi verfasserin aut F. Bottegoni verfasserin aut In APL Materials AIP Publishing LLC, 2013 10(2022), 1, Seite 011102-011102-5 (DE-627)75109840X (DE-600)2722985-3 2166532X nnns volume:10 year:2022 number:1 pages:011102-011102-5 https://doi.org/10.1063/5.0073180 kostenfrei https://doaj.org/article/a1418db27b134c3f80a15be13089b2d7 kostenfrei http://dx.doi.org/10.1063/5.0073180 kostenfrei https://doaj.org/toc/2166-532X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2022 1 011102-011102-5
allfieldsSound	10.1063/5.0073180 doi (DE-627)DOAJ047772433 (DE-599)DOAJa1418db27b134c3f80a15be13089b2d7 DE-627 ger DE-627 rakwb eng TP248.13-248.65 QC1-999 C. Zucchetti verfasserin aut Electric field modulation of spin transport 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The finite spin lifetime in solids is often considered a major hindrance for the development of spintronic devices, which typically require cryogenic temperatures to mitigate this phenomenon. In this work, we show that this feature can instead be exploited to realize a scheme where spin transport is modulated at room temperature by a modest electric field. A field directed antiparallel (parallel) to the spin-diffusion velocity can, in fact, largely increase (decrease) the spin-transport length compared with the zero field case. We find that applying an electric field E = 24 V/cm along a 40 μm-long path in germanium results in about one order of magnitude modulation of the spin-polarized electrons entering into the detector. This work demonstrates that electric fields can be exploited for guiding spins over macroscopic distances and for realizing fast room temperature modulation of spin accumulation. Biotechnology Physics A. Marchionni verfasserin aut M. Bollani verfasserin aut F. Ciccacci verfasserin aut M. Finazzi verfasserin aut F. Bottegoni verfasserin aut In APL Materials AIP Publishing LLC, 2013 10(2022), 1, Seite 011102-011102-5 (DE-627)75109840X (DE-600)2722985-3 2166532X nnns volume:10 year:2022 number:1 pages:011102-011102-5 https://doi.org/10.1063/5.0073180 kostenfrei https://doaj.org/article/a1418db27b134c3f80a15be13089b2d7 kostenfrei http://dx.doi.org/10.1063/5.0073180 kostenfrei https://doaj.org/toc/2166-532X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2022 1 011102-011102-5
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author	C. Zucchetti
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topic_title	TP248.13-248.65 QC1-999 Electric field modulation of spin transport
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title	Electric field modulation of spin transport
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title_sort	electric field modulation of spin transport
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title_auth	Electric field modulation of spin transport
abstract	The finite spin lifetime in solids is often considered a major hindrance for the development of spintronic devices, which typically require cryogenic temperatures to mitigate this phenomenon. In this work, we show that this feature can instead be exploited to realize a scheme where spin transport is modulated at room temperature by a modest electric field. A field directed antiparallel (parallel) to the spin-diffusion velocity can, in fact, largely increase (decrease) the spin-transport length compared with the zero field case. We find that applying an electric field E = 24 V/cm along a 40 μm-long path in germanium results in about one order of magnitude modulation of the spin-polarized electrons entering into the detector. This work demonstrates that electric fields can be exploited for guiding spins over macroscopic distances and for realizing fast room temperature modulation of spin accumulation.
abstractGer	The finite spin lifetime in solids is often considered a major hindrance for the development of spintronic devices, which typically require cryogenic temperatures to mitigate this phenomenon. In this work, we show that this feature can instead be exploited to realize a scheme where spin transport is modulated at room temperature by a modest electric field. A field directed antiparallel (parallel) to the spin-diffusion velocity can, in fact, largely increase (decrease) the spin-transport length compared with the zero field case. We find that applying an electric field E = 24 V/cm along a 40 μm-long path in germanium results in about one order of magnitude modulation of the spin-polarized electrons entering into the detector. This work demonstrates that electric fields can be exploited for guiding spins over macroscopic distances and for realizing fast room temperature modulation of spin accumulation.
abstract_unstemmed	The finite spin lifetime in solids is often considered a major hindrance for the development of spintronic devices, which typically require cryogenic temperatures to mitigate this phenomenon. In this work, we show that this feature can instead be exploited to realize a scheme where spin transport is modulated at room temperature by a modest electric field. A field directed antiparallel (parallel) to the spin-diffusion velocity can, in fact, largely increase (decrease) the spin-transport length compared with the zero field case. We find that applying an electric field E = 24 V/cm along a 40 μm-long path in germanium results in about one order of magnitude modulation of the spin-polarized electrons entering into the detector. This work demonstrates that electric fields can be exploited for guiding spins over macroscopic distances and for realizing fast room temperature modulation of spin accumulation.
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title_short	Electric field modulation of spin transport
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Electric field modulation of spin transport

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