Low-Loss Compact Silicon Nitride Arrayed Waveguide Gratings for Photonic Integrated Circuits

We report on low-loss, low-crosstalk, and compact arrayed waveguide gratings (AWGs) based on a 200-nm-thick-Si<sub<3 </sub<N<sub<4</sub<-core platform. High-resolution fabrication processes realized four types of Si<sub<3</sub<N<sub<4 </sub< AWG device...
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Gespeichert in:

Autor*in:	Kuanping Shang [verfasserIn] Shibnath Pathak [verfasserIn] Chuan Qin [verfasserIn] S. J. Ben Yoo [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2017

Schlagwörter:	Silicon nitride arrayed waveguide grating (AWG)

Übergeordnetes Werk:	In: IEEE Photonics Journal - IEEE, 2015, 9(2017), 5, Seite 5
Übergeordnetes Werk:	volume:9 ; year:2017 ; number:5 ; pages:5

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.1109/JPHOT.2017.2751003

Katalog-ID:	DOAJ049651196

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allfields	10.1109/JPHOT.2017.2751003 doi (DE-627)DOAJ049651196 (DE-599)DOAJ672199f7b26f4689ab3e5f2dc1fe9c01 DE-627 ger DE-627 rakwb eng TA1501-1820 QC350-467 Kuanping Shang verfasserin aut Low-Loss Compact Silicon Nitride Arrayed Waveguide Gratings for Photonic Integrated Circuits 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We report on low-loss, low-crosstalk, and compact arrayed waveguide gratings (AWGs) based on a 200-nm-thick-Si<sub<3 </sub<N<sub<4</sub<-core platform. High-resolution fabrication processes realized four types of Si<sub<3</sub<N<sub<4 </sub< AWG devices: 8 channel × 200 GHz, 16 channel × 100 GHz, 16 channel × 50 GHz, and 16 channel × 25 GHz AWGs. The insertion loss values of the four devices were 1.5 dB, 1.7 dB, 1.8 dB, and 2.7 dB; the corresponding crosstalk values were –24 dB, –21 dB, –20 dB, and –13 dB; footprints were 1.8 × 0.6 mm<sup<2</sup<, 2.2 × 0.7 mm<sup<2</sup<, 3.7 × 0.7 mm<sup<2</sup<, and 6.8 × 0.7 mm<sup<2</sup<, respectively. Silicon nitride arrayed waveguide grating (AWG) Applied optics. Photonics Optics. Light Shibnath Pathak verfasserin aut Chuan Qin verfasserin aut S. J. Ben Yoo verfasserin aut In IEEE Photonics Journal IEEE, 2015 9(2017), 5, Seite 5 (DE-627)600310272 (DE-600)2495610-7 19430655 nnns volume:9 year:2017 number:5 pages:5 https://doi.org/10.1109/JPHOT.2017.2751003 kostenfrei https://doaj.org/article/672199f7b26f4689ab3e5f2dc1fe9c01 kostenfrei https://ieeexplore.ieee.org/document/8030983/ kostenfrei https://doaj.org/toc/1943-0655 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2003 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2017 5 5
spelling	10.1109/JPHOT.2017.2751003 doi (DE-627)DOAJ049651196 (DE-599)DOAJ672199f7b26f4689ab3e5f2dc1fe9c01 DE-627 ger DE-627 rakwb eng TA1501-1820 QC350-467 Kuanping Shang verfasserin aut Low-Loss Compact Silicon Nitride Arrayed Waveguide Gratings for Photonic Integrated Circuits 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We report on low-loss, low-crosstalk, and compact arrayed waveguide gratings (AWGs) based on a 200-nm-thick-Si<sub<3 </sub<N<sub<4</sub<-core platform. High-resolution fabrication processes realized four types of Si<sub<3</sub<N<sub<4 </sub< AWG devices: 8 channel × 200 GHz, 16 channel × 100 GHz, 16 channel × 50 GHz, and 16 channel × 25 GHz AWGs. The insertion loss values of the four devices were 1.5 dB, 1.7 dB, 1.8 dB, and 2.7 dB; the corresponding crosstalk values were –24 dB, –21 dB, –20 dB, and –13 dB; footprints were 1.8 × 0.6 mm<sup<2</sup<, 2.2 × 0.7 mm<sup<2</sup<, 3.7 × 0.7 mm<sup<2</sup<, and 6.8 × 0.7 mm<sup<2</sup<, respectively. Silicon nitride arrayed waveguide grating (AWG) Applied optics. Photonics Optics. Light Shibnath Pathak verfasserin aut Chuan Qin verfasserin aut S. J. Ben Yoo verfasserin aut In IEEE Photonics Journal IEEE, 2015 9(2017), 5, Seite 5 (DE-627)600310272 (DE-600)2495610-7 19430655 nnns volume:9 year:2017 number:5 pages:5 https://doi.org/10.1109/JPHOT.2017.2751003 kostenfrei https://doaj.org/article/672199f7b26f4689ab3e5f2dc1fe9c01 kostenfrei https://ieeexplore.ieee.org/document/8030983/ kostenfrei https://doaj.org/toc/1943-0655 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2003 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2017 5 5
allfields_unstemmed	10.1109/JPHOT.2017.2751003 doi (DE-627)DOAJ049651196 (DE-599)DOAJ672199f7b26f4689ab3e5f2dc1fe9c01 DE-627 ger DE-627 rakwb eng TA1501-1820 QC350-467 Kuanping Shang verfasserin aut Low-Loss Compact Silicon Nitride Arrayed Waveguide Gratings for Photonic Integrated Circuits 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We report on low-loss, low-crosstalk, and compact arrayed waveguide gratings (AWGs) based on a 200-nm-thick-Si<sub<3 </sub<N<sub<4</sub<-core platform. High-resolution fabrication processes realized four types of Si<sub<3</sub<N<sub<4 </sub< AWG devices: 8 channel × 200 GHz, 16 channel × 100 GHz, 16 channel × 50 GHz, and 16 channel × 25 GHz AWGs. The insertion loss values of the four devices were 1.5 dB, 1.7 dB, 1.8 dB, and 2.7 dB; the corresponding crosstalk values were –24 dB, –21 dB, –20 dB, and –13 dB; footprints were 1.8 × 0.6 mm<sup<2</sup<, 2.2 × 0.7 mm<sup<2</sup<, 3.7 × 0.7 mm<sup<2</sup<, and 6.8 × 0.7 mm<sup<2</sup<, respectively. Silicon nitride arrayed waveguide grating (AWG) Applied optics. Photonics Optics. Light Shibnath Pathak verfasserin aut Chuan Qin verfasserin aut S. J. Ben Yoo verfasserin aut In IEEE Photonics Journal IEEE, 2015 9(2017), 5, Seite 5 (DE-627)600310272 (DE-600)2495610-7 19430655 nnns volume:9 year:2017 number:5 pages:5 https://doi.org/10.1109/JPHOT.2017.2751003 kostenfrei https://doaj.org/article/672199f7b26f4689ab3e5f2dc1fe9c01 kostenfrei https://ieeexplore.ieee.org/document/8030983/ kostenfrei https://doaj.org/toc/1943-0655 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2003 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2017 5 5
allfieldsGer	10.1109/JPHOT.2017.2751003 doi (DE-627)DOAJ049651196 (DE-599)DOAJ672199f7b26f4689ab3e5f2dc1fe9c01 DE-627 ger DE-627 rakwb eng TA1501-1820 QC350-467 Kuanping Shang verfasserin aut Low-Loss Compact Silicon Nitride Arrayed Waveguide Gratings for Photonic Integrated Circuits 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We report on low-loss, low-crosstalk, and compact arrayed waveguide gratings (AWGs) based on a 200-nm-thick-Si<sub<3 </sub<N<sub<4</sub<-core platform. High-resolution fabrication processes realized four types of Si<sub<3</sub<N<sub<4 </sub< AWG devices: 8 channel × 200 GHz, 16 channel × 100 GHz, 16 channel × 50 GHz, and 16 channel × 25 GHz AWGs. The insertion loss values of the four devices were 1.5 dB, 1.7 dB, 1.8 dB, and 2.7 dB; the corresponding crosstalk values were –24 dB, –21 dB, –20 dB, and –13 dB; footprints were 1.8 × 0.6 mm<sup<2</sup<, 2.2 × 0.7 mm<sup<2</sup<, 3.7 × 0.7 mm<sup<2</sup<, and 6.8 × 0.7 mm<sup<2</sup<, respectively. Silicon nitride arrayed waveguide grating (AWG) Applied optics. Photonics Optics. Light Shibnath Pathak verfasserin aut Chuan Qin verfasserin aut S. J. Ben Yoo verfasserin aut In IEEE Photonics Journal IEEE, 2015 9(2017), 5, Seite 5 (DE-627)600310272 (DE-600)2495610-7 19430655 nnns volume:9 year:2017 number:5 pages:5 https://doi.org/10.1109/JPHOT.2017.2751003 kostenfrei https://doaj.org/article/672199f7b26f4689ab3e5f2dc1fe9c01 kostenfrei https://ieeexplore.ieee.org/document/8030983/ kostenfrei https://doaj.org/toc/1943-0655 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2003 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2017 5 5
allfieldsSound	10.1109/JPHOT.2017.2751003 doi (DE-627)DOAJ049651196 (DE-599)DOAJ672199f7b26f4689ab3e5f2dc1fe9c01 DE-627 ger DE-627 rakwb eng TA1501-1820 QC350-467 Kuanping Shang verfasserin aut Low-Loss Compact Silicon Nitride Arrayed Waveguide Gratings for Photonic Integrated Circuits 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We report on low-loss, low-crosstalk, and compact arrayed waveguide gratings (AWGs) based on a 200-nm-thick-Si<sub<3 </sub<N<sub<4</sub<-core platform. High-resolution fabrication processes realized four types of Si<sub<3</sub<N<sub<4 </sub< AWG devices: 8 channel × 200 GHz, 16 channel × 100 GHz, 16 channel × 50 GHz, and 16 channel × 25 GHz AWGs. The insertion loss values of the four devices were 1.5 dB, 1.7 dB, 1.8 dB, and 2.7 dB; the corresponding crosstalk values were –24 dB, –21 dB, –20 dB, and –13 dB; footprints were 1.8 × 0.6 mm<sup<2</sup<, 2.2 × 0.7 mm<sup<2</sup<, 3.7 × 0.7 mm<sup<2</sup<, and 6.8 × 0.7 mm<sup<2</sup<, respectively. Silicon nitride arrayed waveguide grating (AWG) Applied optics. Photonics Optics. Light Shibnath Pathak verfasserin aut Chuan Qin verfasserin aut S. J. Ben Yoo verfasserin aut In IEEE Photonics Journal IEEE, 2015 9(2017), 5, Seite 5 (DE-627)600310272 (DE-600)2495610-7 19430655 nnns volume:9 year:2017 number:5 pages:5 https://doi.org/10.1109/JPHOT.2017.2751003 kostenfrei https://doaj.org/article/672199f7b26f4689ab3e5f2dc1fe9c01 kostenfrei https://ieeexplore.ieee.org/document/8030983/ kostenfrei https://doaj.org/toc/1943-0655 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2003 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2017 5 5
language	English
source	In IEEE Photonics Journal 9(2017), 5, Seite 5 volume:9 year:2017 number:5 pages:5
sourceStr	In IEEE Photonics Journal 9(2017), 5, Seite 5 volume:9 year:2017 number:5 pages:5
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Silicon nitride arrayed waveguide grating (AWG) Applied optics. Photonics Optics. Light
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container_title	IEEE Photonics Journal
authorswithroles_txt_mv	Kuanping Shang @@aut@@ Shibnath Pathak @@aut@@ Chuan Qin @@aut@@ S. J. Ben Yoo @@aut@@
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callnumber-first	T - Technology
author	Kuanping Shang
spellingShingle	Kuanping Shang misc TA1501-1820 misc QC350-467 misc Silicon nitride misc arrayed waveguide grating (AWG) misc Applied optics. Photonics misc Optics. Light Low-Loss Compact Silicon Nitride Arrayed Waveguide Gratings for Photonic Integrated Circuits
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topic_title	TA1501-1820 QC350-467 Low-Loss Compact Silicon Nitride Arrayed Waveguide Gratings for Photonic Integrated Circuits Silicon nitride arrayed waveguide grating (AWG)
topic	misc TA1501-1820 misc QC350-467 misc Silicon nitride misc arrayed waveguide grating (AWG) misc Applied optics. Photonics misc Optics. Light
topic_unstemmed	misc TA1501-1820 misc QC350-467 misc Silicon nitride misc arrayed waveguide grating (AWG) misc Applied optics. Photonics misc Optics. Light
topic_browse	misc TA1501-1820 misc QC350-467 misc Silicon nitride misc arrayed waveguide grating (AWG) misc Applied optics. Photonics misc Optics. Light
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title	Low-Loss Compact Silicon Nitride Arrayed Waveguide Gratings for Photonic Integrated Circuits
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title_full	Low-Loss Compact Silicon Nitride Arrayed Waveguide Gratings for Photonic Integrated Circuits
author_sort	Kuanping Shang
journal	IEEE Photonics Journal
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author_browse	Kuanping Shang Shibnath Pathak Chuan Qin S. J. Ben Yoo
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author-letter	Kuanping Shang
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title_sort	low-loss compact silicon nitride arrayed waveguide gratings for photonic integrated circuits
callnumber	TA1501-1820
title_auth	Low-Loss Compact Silicon Nitride Arrayed Waveguide Gratings for Photonic Integrated Circuits
abstract	We report on low-loss, low-crosstalk, and compact arrayed waveguide gratings (AWGs) based on a 200-nm-thick-Si<sub<3 </sub<N<sub<4</sub<-core platform. High-resolution fabrication processes realized four types of Si<sub<3</sub<N<sub<4 </sub< AWG devices: 8 channel × 200 GHz, 16 channel × 100 GHz, 16 channel × 50 GHz, and 16 channel × 25 GHz AWGs. The insertion loss values of the four devices were 1.5 dB, 1.7 dB, 1.8 dB, and 2.7 dB; the corresponding crosstalk values were –24 dB, –21 dB, –20 dB, and –13 dB; footprints were 1.8 × 0.6 mm<sup<2</sup<, 2.2 × 0.7 mm<sup<2</sup<, 3.7 × 0.7 mm<sup<2</sup<, and 6.8 × 0.7 mm<sup<2</sup<, respectively.
abstractGer	We report on low-loss, low-crosstalk, and compact arrayed waveguide gratings (AWGs) based on a 200-nm-thick-Si<sub<3 </sub<N<sub<4</sub<-core platform. High-resolution fabrication processes realized four types of Si<sub<3</sub<N<sub<4 </sub< AWG devices: 8 channel × 200 GHz, 16 channel × 100 GHz, 16 channel × 50 GHz, and 16 channel × 25 GHz AWGs. The insertion loss values of the four devices were 1.5 dB, 1.7 dB, 1.8 dB, and 2.7 dB; the corresponding crosstalk values were –24 dB, –21 dB, –20 dB, and –13 dB; footprints were 1.8 × 0.6 mm<sup<2</sup<, 2.2 × 0.7 mm<sup<2</sup<, 3.7 × 0.7 mm<sup<2</sup<, and 6.8 × 0.7 mm<sup<2</sup<, respectively.
abstract_unstemmed	We report on low-loss, low-crosstalk, and compact arrayed waveguide gratings (AWGs) based on a 200-nm-thick-Si<sub<3 </sub<N<sub<4</sub<-core platform. High-resolution fabrication processes realized four types of Si<sub<3</sub<N<sub<4 </sub< AWG devices: 8 channel × 200 GHz, 16 channel × 100 GHz, 16 channel × 50 GHz, and 16 channel × 25 GHz AWGs. The insertion loss values of the four devices were 1.5 dB, 1.7 dB, 1.8 dB, and 2.7 dB; the corresponding crosstalk values were –24 dB, –21 dB, –20 dB, and –13 dB; footprints were 1.8 × 0.6 mm<sup<2</sup<, 2.2 × 0.7 mm<sup<2</sup<, 3.7 × 0.7 mm<sup<2</sup<, and 6.8 × 0.7 mm<sup<2</sup<, respectively.
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container_issue	5
title_short	Low-Loss Compact Silicon Nitride Arrayed Waveguide Gratings for Photonic Integrated Circuits
url	https://doi.org/10.1109/JPHOT.2017.2751003 https://doaj.org/article/672199f7b26f4689ab3e5f2dc1fe9c01 https://ieeexplore.ieee.org/document/8030983/ https://doaj.org/toc/1943-0655
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author2	Shibnath Pathak Chuan Qin S. J. Ben Yoo
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up_date	2024-07-04T00:15:29.903Z
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