The Impact of Multi-MHz Switching Frequencies on Dynamic On-Resistance in GaN-on-Si HEMTs

Dynamic on-resistance (dR<sub<on</sub<), where the on-resistance immediately after turn-on is higher than the DC resistance, increases the conduction losses in power converters with gallium nitride high-electron-mobility transistors (GaN HEMTs). There exist no direct dR<sub<on</...
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Autor*in:	Grayson Zulauf [verfasserIn] Mattia Guacci [verfasserIn] Juan M. Rivas-Davila [verfasserIn] Johann W. Kolar [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2020

Schlagwörter:	Dynamic on-state resistance gallium nitride power transistors wide bandgap semiconductors

Übergeordnetes Werk:	In: IEEE Open Journal of Power Electronics - IEEE, 2021, 1(2020), Seite 210-215
Übergeordnetes Werk:	volume:1 ; year:2020 ; pages:210-215

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.1109/OJPEL.2020.3005879

Katalog-ID:	DOAJ050222872

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allfieldsSound	10.1109/OJPEL.2020.3005879 doi (DE-627)DOAJ050222872 (DE-599)DOAJ51ce59898a6a4791b875187c0d42ba2f DE-627 ger DE-627 rakwb eng TK1-9971 Grayson Zulauf verfasserin aut The Impact of Multi-MHz Switching Frequencies on Dynamic On-Resistance in GaN-on-Si HEMTs 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Dynamic on-resistance (dR<sub<on</sub<), where the on-resistance immediately after turn-on is higher than the DC resistance, increases the conduction losses in power converters with gallium nitride high-electron-mobility transistors (GaN HEMTs). There exist no direct dR<sub<on</sub< measurements in the literature above 1 MHz, leaving designers unable to predict conduction losses in emerging multi-MHz applications. We address this literature gap by collecting the first on-state voltage dR<sub<on</sub< measurements at multi-MHz frequencies, with a focus on the zero-voltage-switching conditions that are predominantly employed at high frequency. On the selected commercially-available HEMT with a breakdown voltage below 200 V, the dynamic contribution asymptotes above ≈ 2 MHz, a finding predicted by the slow time constants of the traps that cause dR<sub<on</sub<. For the tested HEMT, we find a maximum dR<sub<on</sub< increase over the DC resistance of 2× in a multi-MHz, zero-voltage-switched application. Dynamic on-state resistance gallium nitride power transistors wide bandgap semiconductors Electrical engineering. Electronics. Nuclear engineering Mattia Guacci verfasserin aut Juan M. Rivas-Davila verfasserin aut Johann W. Kolar verfasserin aut In IEEE Open Journal of Power Electronics IEEE, 2021 1(2020), Seite 210-215 (DE-627)1688451307 (DE-600)3006279-2 26441314 nnns volume:1 year:2020 pages:210-215 https://doi.org/10.1109/OJPEL.2020.3005879 kostenfrei https://doaj.org/article/51ce59898a6a4791b875187c0d42ba2f kostenfrei https://ieeexplore.ieee.org/document/9130861/ kostenfrei https://doaj.org/toc/2644-1314 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 1 2020 210-215
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callnumber-first	T - Technology
author	Grayson Zulauf
spellingShingle	Grayson Zulauf misc TK1-9971 misc Dynamic on-state resistance misc gallium nitride misc power transistors misc wide bandgap semiconductors misc Electrical engineering. Electronics. Nuclear engineering The Impact of Multi-MHz Switching Frequencies on Dynamic On-Resistance in GaN-on-Si HEMTs
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topic_title	TK1-9971 The Impact of Multi-MHz Switching Frequencies on Dynamic On-Resistance in GaN-on-Si HEMTs Dynamic on-state resistance gallium nitride power transistors wide bandgap semiconductors
topic	misc TK1-9971 misc Dynamic on-state resistance misc gallium nitride misc power transistors misc wide bandgap semiconductors misc Electrical engineering. Electronics. Nuclear engineering
topic_unstemmed	misc TK1-9971 misc Dynamic on-state resistance misc gallium nitride misc power transistors misc wide bandgap semiconductors misc Electrical engineering. Electronics. Nuclear engineering
topic_browse	misc TK1-9971 misc Dynamic on-state resistance misc gallium nitride misc power transistors misc wide bandgap semiconductors misc Electrical engineering. Electronics. Nuclear engineering
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title	The Impact of Multi-MHz Switching Frequencies on Dynamic On-Resistance in GaN-on-Si HEMTs
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title_full	The Impact of Multi-MHz Switching Frequencies on Dynamic On-Resistance in GaN-on-Si HEMTs
author_sort	Grayson Zulauf
journal	IEEE Open Journal of Power Electronics
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title_sort	impact of multi-mhz switching frequencies on dynamic on-resistance in gan-on-si hemts
callnumber	TK1-9971
title_auth	The Impact of Multi-MHz Switching Frequencies on Dynamic On-Resistance in GaN-on-Si HEMTs
abstract	Dynamic on-resistance (dR<sub<on</sub<), where the on-resistance immediately after turn-on is higher than the DC resistance, increases the conduction losses in power converters with gallium nitride high-electron-mobility transistors (GaN HEMTs). There exist no direct dR<sub<on</sub< measurements in the literature above 1 MHz, leaving designers unable to predict conduction losses in emerging multi-MHz applications. We address this literature gap by collecting the first on-state voltage dR<sub<on</sub< measurements at multi-MHz frequencies, with a focus on the zero-voltage-switching conditions that are predominantly employed at high frequency. On the selected commercially-available HEMT with a breakdown voltage below 200 V, the dynamic contribution asymptotes above ≈ 2 MHz, a finding predicted by the slow time constants of the traps that cause dR<sub<on</sub<. For the tested HEMT, we find a maximum dR<sub<on</sub< increase over the DC resistance of 2× in a multi-MHz, zero-voltage-switched application.
abstractGer	Dynamic on-resistance (dR<sub<on</sub<), where the on-resistance immediately after turn-on is higher than the DC resistance, increases the conduction losses in power converters with gallium nitride high-electron-mobility transistors (GaN HEMTs). There exist no direct dR<sub<on</sub< measurements in the literature above 1 MHz, leaving designers unable to predict conduction losses in emerging multi-MHz applications. We address this literature gap by collecting the first on-state voltage dR<sub<on</sub< measurements at multi-MHz frequencies, with a focus on the zero-voltage-switching conditions that are predominantly employed at high frequency. On the selected commercially-available HEMT with a breakdown voltage below 200 V, the dynamic contribution asymptotes above ≈ 2 MHz, a finding predicted by the slow time constants of the traps that cause dR<sub<on</sub<. For the tested HEMT, we find a maximum dR<sub<on</sub< increase over the DC resistance of 2× in a multi-MHz, zero-voltage-switched application.
abstract_unstemmed	Dynamic on-resistance (dR<sub<on</sub<), where the on-resistance immediately after turn-on is higher than the DC resistance, increases the conduction losses in power converters with gallium nitride high-electron-mobility transistors (GaN HEMTs). There exist no direct dR<sub<on</sub< measurements in the literature above 1 MHz, leaving designers unable to predict conduction losses in emerging multi-MHz applications. We address this literature gap by collecting the first on-state voltage dR<sub<on</sub< measurements at multi-MHz frequencies, with a focus on the zero-voltage-switching conditions that are predominantly employed at high frequency. On the selected commercially-available HEMT with a breakdown voltage below 200 V, the dynamic contribution asymptotes above ≈ 2 MHz, a finding predicted by the slow time constants of the traps that cause dR<sub<on</sub<. For the tested HEMT, we find a maximum dR<sub<on</sub< increase over the DC resistance of 2× in a multi-MHz, zero-voltage-switched application.
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title_short	The Impact of Multi-MHz Switching Frequencies on Dynamic On-Resistance in GaN-on-Si HEMTs
url	https://doi.org/10.1109/OJPEL.2020.3005879 https://doaj.org/article/51ce59898a6a4791b875187c0d42ba2f https://ieeexplore.ieee.org/document/9130861/ https://doaj.org/toc/2644-1314
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up_date	2024-07-03T13:41:39.960Z
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