Effective Modulation of Optical and Photoelectrical Properties of SnS<sub<2</sub< Hexagonal Nanoflakes via Zn Incorporation

Tin sulfides are promising materials in the fields of photoelectronics and photovoltaics because of their appropriate energy bands. However, doping in SnS<sub<2</sub< can improve the stability and robustness of this material in potential applications. Herein, we report the synthesis of S...
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Autor*in:	Ganesan Mohan Kumar [verfasserIn] Pugazhendi Ilanchezhiyan [verfasserIn] Hak Dong Cho [verfasserIn] Shavkat Yuldashev [verfasserIn] Hee Chang Jeon [verfasserIn] Deuk Young Kim [verfasserIn] Tae Won Kang [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2019

Schlagwörter:	SnS semiconductor zinc doping photoelectronics

Übergeordnetes Werk:	In: Nanomaterials - MDPI AG, 2012, 9(2019), 7, p 924
Übergeordnetes Werk:	volume:9 ; year:2019 ; number:7, p 924

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/nano9070924

Katalog-ID:	DOAJ050399993

Internformat


LEADER	01000caa a22002652 4500
001	DOAJ050399993
003	DE-627
005	20230308152648.0
007	cr uuu---uuuuu
008	230227s2019 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.3390/nano9070924 \|2 doi
035			\|a (DE-627)DOAJ050399993
035			\|a (DE-599)DOAJf23805e233f84022bca74d21b7dcd0b7
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
050		0	\|a QD1-999
100	0		\|a Ganesan Mohan Kumar \|e verfasserin \|4 aut
245	1	0	\|a Effective Modulation of Optical and Photoelectrical Properties of SnS<sub<2</sub< Hexagonal Nanoflakes via Zn Incorporation
264		1	\|c 2019
336			\|a Text \|b txt \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
520			\|a Tin sulfides are promising materials in the fields of photoelectronics and photovoltaics because of their appropriate energy bands. However, doping in SnS<sub<2</sub< can improve the stability and robustness of this material in potential applications. Herein, we report the synthesis of SnS<sub<2</sub< nanoflakes with Zn doping via simple hydrothermal route. The effect of doping Zn was found to display a huge influence in the structural and crystalline order of as synthesized SnS<sub<2</sub<. Their optical properties attest Zn doping of SnS<sub<2</sub< results in reduction of the band gap which benefits strong visible-light absorption. Significantly, enhanced photoresponse was observed with respect to pristine SnS<sub<2</sub<. Such enhancement could result in improved electronic conductivity and sensitivity due to Zn doping at appropriate concentration. These excellent performances show that Sn<sub<1−<i<x</i<</sub<Zn<i<<sub<x</sub<</i<S<sub<2</sub< nanoflakes could offer huge potential for nanoelectronics and optoelectronics device applications.
650		4	\|a SnS<sub<2</sub< nanoflakes
650		4	\|a semiconductor
650		4	\|a zinc doping
650		4	\|a photoelectronics
653		0	\|a Chemistry
700	0		\|a Pugazhendi Ilanchezhiyan \|e verfasserin \|4 aut
700	0		\|a Hak Dong Cho \|e verfasserin \|4 aut
700	0		\|a Shavkat Yuldashev \|e verfasserin \|4 aut
700	0		\|a Hee Chang Jeon \|e verfasserin \|4 aut
700	0		\|a Deuk Young Kim \|e verfasserin \|4 aut
700	0		\|a Tae Won Kang \|e verfasserin \|4 aut
773	0	8	\|i In \|t Nanomaterials \|d MDPI AG, 2012 \|g 9(2019), 7, p 924 \|w (DE-627)718627199 \|w (DE-600)2662255-5 \|x 20794991 \|7 nnns
773	1	8	\|g volume:9 \|g year:2019 \|g number:7, p 924
856	4	0	\|u https://doi.org/10.3390/nano9070924 \|z kostenfrei
856	4	0	\|u https://doaj.org/article/f23805e233f84022bca74d21b7dcd0b7 \|z kostenfrei
856	4	0	\|u https://www.mdpi.com/2079-4991/9/7/924 \|z kostenfrei
856	4	2	\|u https://doaj.org/toc/2079-4991 \|y Journal toc \|z kostenfrei
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_DOAJ
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_39
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_74
912			\|a GBV_ILN_95
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_151
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_213
912			\|a GBV_ILN_230
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_602
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2108
912			\|a GBV_ILN_2119
912			\|a GBV_ILN_4012
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4367
912			\|a GBV_ILN_4700
951			\|a AR
952			\|d 9 \|j 2019 \|e 7, p 924

Indexfelder

author_variant	g m k gmk p i pi h d c hdc s y sy h c j hcj d y k dyk t w k twk
matchkey_str	article:20794991:2019----::fetvmdltoootclnpoolcrclrprisfnsbsbeaoan
hierarchy_sort_str	2019
callnumber-subject-code	QD
publishDate	2019
allfields	10.3390/nano9070924 doi (DE-627)DOAJ050399993 (DE-599)DOAJf23805e233f84022bca74d21b7dcd0b7 DE-627 ger DE-627 rakwb eng QD1-999 Ganesan Mohan Kumar verfasserin aut Effective Modulation of Optical and Photoelectrical Properties of SnS<sub<2</sub< Hexagonal Nanoflakes via Zn Incorporation 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Tin sulfides are promising materials in the fields of photoelectronics and photovoltaics because of their appropriate energy bands. However, doping in SnS<sub<2</sub< can improve the stability and robustness of this material in potential applications. Herein, we report the synthesis of SnS<sub<2</sub< nanoflakes with Zn doping via simple hydrothermal route. The effect of doping Zn was found to display a huge influence in the structural and crystalline order of as synthesized SnS<sub<2</sub<. Their optical properties attest Zn doping of SnS<sub<2</sub< results in reduction of the band gap which benefits strong visible-light absorption. Significantly, enhanced photoresponse was observed with respect to pristine SnS<sub<2</sub<. Such enhancement could result in improved electronic conductivity and sensitivity due to Zn doping at appropriate concentration. These excellent performances show that Sn<sub<1−<i<x</i<</sub<Zn<i<<sub<x</sub<</i<S<sub<2</sub< nanoflakes could offer huge potential for nanoelectronics and optoelectronics device applications. SnS<sub<2</sub< nanoflakes semiconductor zinc doping photoelectronics Chemistry Pugazhendi Ilanchezhiyan verfasserin aut Hak Dong Cho verfasserin aut Shavkat Yuldashev verfasserin aut Hee Chang Jeon verfasserin aut Deuk Young Kim verfasserin aut Tae Won Kang verfasserin aut In Nanomaterials MDPI AG, 2012 9(2019), 7, p 924 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:9 year:2019 number:7, p 924 https://doi.org/10.3390/nano9070924 kostenfrei https://doaj.org/article/f23805e233f84022bca74d21b7dcd0b7 kostenfrei https://www.mdpi.com/2079-4991/9/7/924 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 7, p 924
spelling	10.3390/nano9070924 doi (DE-627)DOAJ050399993 (DE-599)DOAJf23805e233f84022bca74d21b7dcd0b7 DE-627 ger DE-627 rakwb eng QD1-999 Ganesan Mohan Kumar verfasserin aut Effective Modulation of Optical and Photoelectrical Properties of SnS<sub<2</sub< Hexagonal Nanoflakes via Zn Incorporation 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Tin sulfides are promising materials in the fields of photoelectronics and photovoltaics because of their appropriate energy bands. However, doping in SnS<sub<2</sub< can improve the stability and robustness of this material in potential applications. Herein, we report the synthesis of SnS<sub<2</sub< nanoflakes with Zn doping via simple hydrothermal route. The effect of doping Zn was found to display a huge influence in the structural and crystalline order of as synthesized SnS<sub<2</sub<. Their optical properties attest Zn doping of SnS<sub<2</sub< results in reduction of the band gap which benefits strong visible-light absorption. Significantly, enhanced photoresponse was observed with respect to pristine SnS<sub<2</sub<. Such enhancement could result in improved electronic conductivity and sensitivity due to Zn doping at appropriate concentration. These excellent performances show that Sn<sub<1−<i<x</i<</sub<Zn<i<<sub<x</sub<</i<S<sub<2</sub< nanoflakes could offer huge potential for nanoelectronics and optoelectronics device applications. SnS<sub<2</sub< nanoflakes semiconductor zinc doping photoelectronics Chemistry Pugazhendi Ilanchezhiyan verfasserin aut Hak Dong Cho verfasserin aut Shavkat Yuldashev verfasserin aut Hee Chang Jeon verfasserin aut Deuk Young Kim verfasserin aut Tae Won Kang verfasserin aut In Nanomaterials MDPI AG, 2012 9(2019), 7, p 924 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:9 year:2019 number:7, p 924 https://doi.org/10.3390/nano9070924 kostenfrei https://doaj.org/article/f23805e233f84022bca74d21b7dcd0b7 kostenfrei https://www.mdpi.com/2079-4991/9/7/924 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 7, p 924
allfields_unstemmed	10.3390/nano9070924 doi (DE-627)DOAJ050399993 (DE-599)DOAJf23805e233f84022bca74d21b7dcd0b7 DE-627 ger DE-627 rakwb eng QD1-999 Ganesan Mohan Kumar verfasserin aut Effective Modulation of Optical and Photoelectrical Properties of SnS<sub<2</sub< Hexagonal Nanoflakes via Zn Incorporation 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Tin sulfides are promising materials in the fields of photoelectronics and photovoltaics because of their appropriate energy bands. However, doping in SnS<sub<2</sub< can improve the stability and robustness of this material in potential applications. Herein, we report the synthesis of SnS<sub<2</sub< nanoflakes with Zn doping via simple hydrothermal route. The effect of doping Zn was found to display a huge influence in the structural and crystalline order of as synthesized SnS<sub<2</sub<. Their optical properties attest Zn doping of SnS<sub<2</sub< results in reduction of the band gap which benefits strong visible-light absorption. Significantly, enhanced photoresponse was observed with respect to pristine SnS<sub<2</sub<. Such enhancement could result in improved electronic conductivity and sensitivity due to Zn doping at appropriate concentration. These excellent performances show that Sn<sub<1−<i<x</i<</sub<Zn<i<<sub<x</sub<</i<S<sub<2</sub< nanoflakes could offer huge potential for nanoelectronics and optoelectronics device applications. SnS<sub<2</sub< nanoflakes semiconductor zinc doping photoelectronics Chemistry Pugazhendi Ilanchezhiyan verfasserin aut Hak Dong Cho verfasserin aut Shavkat Yuldashev verfasserin aut Hee Chang Jeon verfasserin aut Deuk Young Kim verfasserin aut Tae Won Kang verfasserin aut In Nanomaterials MDPI AG, 2012 9(2019), 7, p 924 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:9 year:2019 number:7, p 924 https://doi.org/10.3390/nano9070924 kostenfrei https://doaj.org/article/f23805e233f84022bca74d21b7dcd0b7 kostenfrei https://www.mdpi.com/2079-4991/9/7/924 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 7, p 924
allfieldsGer	10.3390/nano9070924 doi (DE-627)DOAJ050399993 (DE-599)DOAJf23805e233f84022bca74d21b7dcd0b7 DE-627 ger DE-627 rakwb eng QD1-999 Ganesan Mohan Kumar verfasserin aut Effective Modulation of Optical and Photoelectrical Properties of SnS<sub<2</sub< Hexagonal Nanoflakes via Zn Incorporation 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Tin sulfides are promising materials in the fields of photoelectronics and photovoltaics because of their appropriate energy bands. However, doping in SnS<sub<2</sub< can improve the stability and robustness of this material in potential applications. Herein, we report the synthesis of SnS<sub<2</sub< nanoflakes with Zn doping via simple hydrothermal route. The effect of doping Zn was found to display a huge influence in the structural and crystalline order of as synthesized SnS<sub<2</sub<. Their optical properties attest Zn doping of SnS<sub<2</sub< results in reduction of the band gap which benefits strong visible-light absorption. Significantly, enhanced photoresponse was observed with respect to pristine SnS<sub<2</sub<. Such enhancement could result in improved electronic conductivity and sensitivity due to Zn doping at appropriate concentration. These excellent performances show that Sn<sub<1−<i<x</i<</sub<Zn<i<<sub<x</sub<</i<S<sub<2</sub< nanoflakes could offer huge potential for nanoelectronics and optoelectronics device applications. SnS<sub<2</sub< nanoflakes semiconductor zinc doping photoelectronics Chemistry Pugazhendi Ilanchezhiyan verfasserin aut Hak Dong Cho verfasserin aut Shavkat Yuldashev verfasserin aut Hee Chang Jeon verfasserin aut Deuk Young Kim verfasserin aut Tae Won Kang verfasserin aut In Nanomaterials MDPI AG, 2012 9(2019), 7, p 924 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:9 year:2019 number:7, p 924 https://doi.org/10.3390/nano9070924 kostenfrei https://doaj.org/article/f23805e233f84022bca74d21b7dcd0b7 kostenfrei https://www.mdpi.com/2079-4991/9/7/924 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 7, p 924
allfieldsSound	10.3390/nano9070924 doi (DE-627)DOAJ050399993 (DE-599)DOAJf23805e233f84022bca74d21b7dcd0b7 DE-627 ger DE-627 rakwb eng QD1-999 Ganesan Mohan Kumar verfasserin aut Effective Modulation of Optical and Photoelectrical Properties of SnS<sub<2</sub< Hexagonal Nanoflakes via Zn Incorporation 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Tin sulfides are promising materials in the fields of photoelectronics and photovoltaics because of their appropriate energy bands. However, doping in SnS<sub<2</sub< can improve the stability and robustness of this material in potential applications. Herein, we report the synthesis of SnS<sub<2</sub< nanoflakes with Zn doping via simple hydrothermal route. The effect of doping Zn was found to display a huge influence in the structural and crystalline order of as synthesized SnS<sub<2</sub<. Their optical properties attest Zn doping of SnS<sub<2</sub< results in reduction of the band gap which benefits strong visible-light absorption. Significantly, enhanced photoresponse was observed with respect to pristine SnS<sub<2</sub<. Such enhancement could result in improved electronic conductivity and sensitivity due to Zn doping at appropriate concentration. These excellent performances show that Sn<sub<1−<i<x</i<</sub<Zn<i<<sub<x</sub<</i<S<sub<2</sub< nanoflakes could offer huge potential for nanoelectronics and optoelectronics device applications. SnS<sub<2</sub< nanoflakes semiconductor zinc doping photoelectronics Chemistry Pugazhendi Ilanchezhiyan verfasserin aut Hak Dong Cho verfasserin aut Shavkat Yuldashev verfasserin aut Hee Chang Jeon verfasserin aut Deuk Young Kim verfasserin aut Tae Won Kang verfasserin aut In Nanomaterials MDPI AG, 2012 9(2019), 7, p 924 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:9 year:2019 number:7, p 924 https://doi.org/10.3390/nano9070924 kostenfrei https://doaj.org/article/f23805e233f84022bca74d21b7dcd0b7 kostenfrei https://www.mdpi.com/2079-4991/9/7/924 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 7, p 924
language	English
source	In Nanomaterials 9(2019), 7, p 924 volume:9 year:2019 number:7, p 924
sourceStr	In Nanomaterials 9(2019), 7, p 924 volume:9 year:2019 number:7, p 924
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	SnS<sub<2</sub< nanoflakes semiconductor zinc doping photoelectronics Chemistry
isfreeaccess_bool	true
container_title	Nanomaterials
authorswithroles_txt_mv	Ganesan Mohan Kumar @@aut@@ Pugazhendi Ilanchezhiyan @@aut@@ Hak Dong Cho @@aut@@ Shavkat Yuldashev @@aut@@ Hee Chang Jeon @@aut@@ Deuk Young Kim @@aut@@ Tae Won Kang @@aut@@
publishDateDaySort_date	2019-01-01T00:00:00Z
hierarchy_top_id	718627199
id	DOAJ050399993
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ050399993</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230308152648.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230227s2019 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.3390/nano9070924</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ050399993</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJf23805e233f84022bca74d21b7dcd0b7</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QD1-999</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Ganesan Mohan Kumar</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Effective Modulation of Optical and Photoelectrical Properties of SnS<sub<2</sub< Hexagonal Nanoflakes via Zn Incorporation</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2019</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Tin sulfides are promising materials in the fields of photoelectronics and photovoltaics because of their appropriate energy bands. However, doping in SnS<sub<2</sub< can improve the stability and robustness of this material in potential applications. Herein, we report the synthesis of SnS<sub<2</sub< nanoflakes with Zn doping via simple hydrothermal route. The effect of doping Zn was found to display a huge influence in the structural and crystalline order of as synthesized SnS<sub<2</sub<. Their optical properties attest Zn doping of SnS<sub<2</sub< results in reduction of the band gap which benefits strong visible-light absorption. Significantly, enhanced photoresponse was observed with respect to pristine SnS<sub<2</sub<. Such enhancement could result in improved electronic conductivity and sensitivity due to Zn doping at appropriate concentration. These excellent performances show that Sn<sub<1−<i<x</i<</sub<Zn<i<<sub<x</sub<</i<S<sub<2</sub< nanoflakes could offer huge potential for nanoelectronics and optoelectronics device applications.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">SnS<sub<2</sub< nanoflakes</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">semiconductor</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">zinc doping</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">photoelectronics</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Chemistry</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Pugazhendi Ilanchezhiyan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Hak Dong Cho</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Shavkat Yuldashev</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Hee Chang Jeon</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Deuk Young Kim</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Tae Won Kang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">Nanomaterials</subfield><subfield code="d">MDPI AG, 2012</subfield><subfield code="g">9(2019), 7, p 924</subfield><subfield code="w">(DE-627)718627199</subfield><subfield code="w">(DE-600)2662255-5</subfield><subfield code="x">20794991</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:9</subfield><subfield code="g">year:2019</subfield><subfield code="g">number:7, p 924</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.3390/nano9070924</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/f23805e233f84022bca74d21b7dcd0b7</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://www.mdpi.com/2079-4991/9/7/924</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2079-4991</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2108</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2119</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">9</subfield><subfield code="j">2019</subfield><subfield code="e">7, p 924</subfield></datafield></record></collection>
callnumber-first	Q - Science
author	Ganesan Mohan Kumar
spellingShingle	Ganesan Mohan Kumar misc QD1-999 misc SnS<sub<2</sub< nanoflakes misc semiconductor misc zinc doping misc photoelectronics misc Chemistry Effective Modulation of Optical and Photoelectrical Properties of SnS<sub<2</sub< Hexagonal Nanoflakes via Zn Incorporation
authorStr	Ganesan Mohan Kumar
ppnlink_with_tag_str_mv	@@773@@(DE-627)718627199
format	electronic Article
delete_txt_mv	keep
author_role	aut aut aut aut aut aut aut
collection	DOAJ
remote_str	true
callnumber-label	QD1-999
illustrated	Not Illustrated
issn	20794991
topic_title	QD1-999 Effective Modulation of Optical and Photoelectrical Properties of SnS<sub<2</sub< Hexagonal Nanoflakes via Zn Incorporation SnS<sub<2</sub< nanoflakes semiconductor zinc doping photoelectronics
topic	misc QD1-999 misc SnS<sub<2</sub< nanoflakes misc semiconductor misc zinc doping misc photoelectronics misc Chemistry
topic_unstemmed	misc QD1-999 misc SnS<sub<2</sub< nanoflakes misc semiconductor misc zinc doping misc photoelectronics misc Chemistry
topic_browse	misc QD1-999 misc SnS<sub<2</sub< nanoflakes misc semiconductor misc zinc doping misc photoelectronics misc Chemistry
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	cr
hierarchy_parent_title	Nanomaterials
hierarchy_parent_id	718627199
hierarchy_top_title	Nanomaterials
isfreeaccess_txt	true
familylinks_str_mv	(DE-627)718627199 (DE-600)2662255-5
title	Effective Modulation of Optical and Photoelectrical Properties of SnS<sub<2</sub< Hexagonal Nanoflakes via Zn Incorporation
ctrlnum	(DE-627)DOAJ050399993 (DE-599)DOAJf23805e233f84022bca74d21b7dcd0b7
title_full	Effective Modulation of Optical and Photoelectrical Properties of SnS<sub<2</sub< Hexagonal Nanoflakes via Zn Incorporation
author_sort	Ganesan Mohan Kumar
journal	Nanomaterials
journalStr	Nanomaterials
callnumber-first-code	Q
lang_code	eng
isOA_bool	true
recordtype	marc
publishDateSort	2019
contenttype_str_mv	txt
author_browse	Ganesan Mohan Kumar Pugazhendi Ilanchezhiyan Hak Dong Cho Shavkat Yuldashev Hee Chang Jeon Deuk Young Kim Tae Won Kang
container_volume	9
class	QD1-999
format_se	Elektronische Aufsätze
author-letter	Ganesan Mohan Kumar
doi_str_mv	10.3390/nano9070924
author2-role	verfasserin
title_sort	effective modulation of optical and photoelectrical properties of sns<sub<2</sub< hexagonal nanoflakes via zn incorporation
callnumber	QD1-999
title_auth	Effective Modulation of Optical and Photoelectrical Properties of SnS<sub<2</sub< Hexagonal Nanoflakes via Zn Incorporation
abstract	Tin sulfides are promising materials in the fields of photoelectronics and photovoltaics because of their appropriate energy bands. However, doping in SnS<sub<2</sub< can improve the stability and robustness of this material in potential applications. Herein, we report the synthesis of SnS<sub<2</sub< nanoflakes with Zn doping via simple hydrothermal route. The effect of doping Zn was found to display a huge influence in the structural and crystalline order of as synthesized SnS<sub<2</sub<. Their optical properties attest Zn doping of SnS<sub<2</sub< results in reduction of the band gap which benefits strong visible-light absorption. Significantly, enhanced photoresponse was observed with respect to pristine SnS<sub<2</sub<. Such enhancement could result in improved electronic conductivity and sensitivity due to Zn doping at appropriate concentration. These excellent performances show that Sn<sub<1−<i<x</i<</sub<Zn<i<<sub<x</sub<</i<S<sub<2</sub< nanoflakes could offer huge potential for nanoelectronics and optoelectronics device applications.
abstractGer	Tin sulfides are promising materials in the fields of photoelectronics and photovoltaics because of their appropriate energy bands. However, doping in SnS<sub<2</sub< can improve the stability and robustness of this material in potential applications. Herein, we report the synthesis of SnS<sub<2</sub< nanoflakes with Zn doping via simple hydrothermal route. The effect of doping Zn was found to display a huge influence in the structural and crystalline order of as synthesized SnS<sub<2</sub<. Their optical properties attest Zn doping of SnS<sub<2</sub< results in reduction of the band gap which benefits strong visible-light absorption. Significantly, enhanced photoresponse was observed with respect to pristine SnS<sub<2</sub<. Such enhancement could result in improved electronic conductivity and sensitivity due to Zn doping at appropriate concentration. These excellent performances show that Sn<sub<1−<i<x</i<</sub<Zn<i<<sub<x</sub<</i<S<sub<2</sub< nanoflakes could offer huge potential for nanoelectronics and optoelectronics device applications.
abstract_unstemmed	Tin sulfides are promising materials in the fields of photoelectronics and photovoltaics because of their appropriate energy bands. However, doping in SnS<sub<2</sub< can improve the stability and robustness of this material in potential applications. Herein, we report the synthesis of SnS<sub<2</sub< nanoflakes with Zn doping via simple hydrothermal route. The effect of doping Zn was found to display a huge influence in the structural and crystalline order of as synthesized SnS<sub<2</sub<. Their optical properties attest Zn doping of SnS<sub<2</sub< results in reduction of the band gap which benefits strong visible-light absorption. Significantly, enhanced photoresponse was observed with respect to pristine SnS<sub<2</sub<. Such enhancement could result in improved electronic conductivity and sensitivity due to Zn doping at appropriate concentration. These excellent performances show that Sn<sub<1−<i<x</i<</sub<Zn<i<<sub<x</sub<</i<S<sub<2</sub< nanoflakes could offer huge potential for nanoelectronics and optoelectronics device applications.
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700
container_issue	7, p 924
title_short	Effective Modulation of Optical and Photoelectrical Properties of SnS<sub<2</sub< Hexagonal Nanoflakes via Zn Incorporation
url	https://doi.org/10.3390/nano9070924 https://doaj.org/article/f23805e233f84022bca74d21b7dcd0b7 https://www.mdpi.com/2079-4991/9/7/924 https://doaj.org/toc/2079-4991
remote_bool	true
author2	Pugazhendi Ilanchezhiyan Hak Dong Cho Shavkat Yuldashev Hee Chang Jeon Deuk Young Kim Tae Won Kang
author2Str	Pugazhendi Ilanchezhiyan Hak Dong Cho Shavkat Yuldashev Hee Chang Jeon Deuk Young Kim Tae Won Kang
ppnlink	718627199
callnumber-subject	QD - Chemistry
mediatype_str_mv	c
isOA_txt	true
hochschulschrift_bool	false
doi_str	10.3390/nano9070924
callnumber-a	QD1-999
up_date	2024-07-03T14:38:29.607Z
_version_	1803569080157863936
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ050399993</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230308152648.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230227s2019 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.3390/nano9070924</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ050399993</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJf23805e233f84022bca74d21b7dcd0b7</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QD1-999</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Ganesan Mohan Kumar</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Effective Modulation of Optical and Photoelectrical Properties of SnS<sub<2</sub< Hexagonal Nanoflakes via Zn Incorporation</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2019</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Tin sulfides are promising materials in the fields of photoelectronics and photovoltaics because of their appropriate energy bands. However, doping in SnS<sub<2</sub< can improve the stability and robustness of this material in potential applications. Herein, we report the synthesis of SnS<sub<2</sub< nanoflakes with Zn doping via simple hydrothermal route. The effect of doping Zn was found to display a huge influence in the structural and crystalline order of as synthesized SnS<sub<2</sub<. Their optical properties attest Zn doping of SnS<sub<2</sub< results in reduction of the band gap which benefits strong visible-light absorption. Significantly, enhanced photoresponse was observed with respect to pristine SnS<sub<2</sub<. Such enhancement could result in improved electronic conductivity and sensitivity due to Zn doping at appropriate concentration. These excellent performances show that Sn<sub<1−<i<x</i<</sub<Zn<i<<sub<x</sub<</i<S<sub<2</sub< nanoflakes could offer huge potential for nanoelectronics and optoelectronics device applications.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">SnS<sub<2</sub< nanoflakes</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">semiconductor</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">zinc doping</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">photoelectronics</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Chemistry</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Pugazhendi Ilanchezhiyan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Hak Dong Cho</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Shavkat Yuldashev</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Hee Chang Jeon</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Deuk Young Kim</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Tae Won Kang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">Nanomaterials</subfield><subfield code="d">MDPI AG, 2012</subfield><subfield code="g">9(2019), 7, p 924</subfield><subfield code="w">(DE-627)718627199</subfield><subfield code="w">(DE-600)2662255-5</subfield><subfield code="x">20794991</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:9</subfield><subfield code="g">year:2019</subfield><subfield code="g">number:7, p 924</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.3390/nano9070924</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/f23805e233f84022bca74d21b7dcd0b7</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://www.mdpi.com/2079-4991/9/7/924</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2079-4991</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2108</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2119</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">9</subfield><subfield code="j">2019</subfield><subfield code="e">7, p 924</subfield></datafield></record></collection>
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Effective Modulation of Optical and Photoelectrical Properties of SnS<sub<2</sub< Hexagonal Nanoflakes via Zn Incorporation

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