The influence of microstructure characteristics on electrical properties in ITO thin film

ITO thin films were deposited on sapphire substrates under different deposition parameters via ion-assistant electron beam evaporation method. Microstructure characteristics such as crystalline structure and surface morphology of as-deposited ITO thin films were studied by using X-ray diffraction sp...
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Autor*in:	Yang Chenggang [verfasserIn] Yang Jingyuan [verfasserIn] Han Dongao [verfasserIn] Li Chan [verfasserIn] Xu Yuting [verfasserIn] Qiu Yang [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch ; Französisch

Erschienen:	2020

Übergeordnetes Werk:	In: E3S Web of Conferences - EDP Sciences, 2013, 194, p 01039(2020)
Übergeordnetes Werk:	volume:194, p 01039 ; year:2020

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.1051/e3sconf/202019401039

Katalog-ID:	DOAJ052446190

Internformat


LEADER	01000caa a22002652 4500
001	DOAJ052446190
003	DE-627
005	20230308165400.0
007	cr uuu---uuuuu
008	230227s2020 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.1051/e3sconf/202019401039 \|2 doi
035			\|a (DE-627)DOAJ052446190
035			\|a (DE-599)DOAJ5a06703aeeb04c1182e707ffe45065a1
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng \|a fre
050		0	\|a GE1-350
100	0		\|a Yang Chenggang \|e verfasserin \|4 aut
245	1	4	\|a The influence of microstructure characteristics on electrical properties in ITO thin film
264		1	\|c 2020
336			\|a Text \|b txt \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
520			\|a ITO thin films were deposited on sapphire substrates under different deposition parameters via ion-assistant electron beam evaporation method. Microstructure characteristics such as crystalline structure and surface morphology of as-deposited ITO thin films were studied by using X-ray diffraction spectroscopy, transmission electron microscopy and field emission scanning electron microscopy, as well as the index of sheet resistance, carrier concentration, carrier mobility and transmission in visible spectrum were tested by means of Hall effect tester and UV-VIS-NIR spectrophotometer, respectively. The influence and impact mechanism of microstructure characteristic on electrical properties of as-deposited ITO thin films were investigated and analyzed in detail.
653		0	\|a Environmental sciences
700	0		\|a Yang Jingyuan \|e verfasserin \|4 aut
700	0		\|a Han Dongao \|e verfasserin \|4 aut
700	0		\|a Li Chan \|e verfasserin \|4 aut
700	0		\|a Xu Yuting \|e verfasserin \|4 aut
700	0		\|a Qiu Yang \|e verfasserin \|4 aut
773	0	8	\|i In \|t E3S Web of Conferences \|d EDP Sciences, 2013 \|g 194, p 01039(2020) \|w (DE-627)778372081 \|w (DE-600)2755680-3 \|x 22671242 \|7 nnns
773	1	8	\|g volume:194, p 01039 \|g year:2020
856	4	0	\|u https://doi.org/10.1051/e3sconf/202019401039 \|z kostenfrei
856	4	0	\|u https://doaj.org/article/5a06703aeeb04c1182e707ffe45065a1 \|z kostenfrei
856	4	0	\|u https://www.e3s-conferences.org/articles/e3sconf/pdf/2020/54/e3sconf_icaeer2020_01039.pdf \|z kostenfrei
856	4	2	\|u https://doaj.org/toc/2267-1242 \|y Journal toc \|z kostenfrei
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_DOAJ
912			\|a GBV_ILN_11
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_39
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_95
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_151
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_213
912			\|a GBV_ILN_230
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_4012
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4367
912			\|a GBV_ILN_4700
951			\|a AR
952			\|d 194, p 01039 \|j 2020

Indexfelder

author_variant	y c yc y j yj h d hd l c lc x y xy q y qy
matchkey_str	article:22671242:2020----::hifunefirsrcuehrceitcoeetiap
hierarchy_sort_str	2020
callnumber-subject-code	GE
publishDate	2020
allfields	10.1051/e3sconf/202019401039 doi (DE-627)DOAJ052446190 (DE-599)DOAJ5a06703aeeb04c1182e707ffe45065a1 DE-627 ger DE-627 rakwb eng fre GE1-350 Yang Chenggang verfasserin aut The influence of microstructure characteristics on electrical properties in ITO thin film 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier ITO thin films were deposited on sapphire substrates under different deposition parameters via ion-assistant electron beam evaporation method. Microstructure characteristics such as crystalline structure and surface morphology of as-deposited ITO thin films were studied by using X-ray diffraction spectroscopy, transmission electron microscopy and field emission scanning electron microscopy, as well as the index of sheet resistance, carrier concentration, carrier mobility and transmission in visible spectrum were tested by means of Hall effect tester and UV-VIS-NIR spectrophotometer, respectively. The influence and impact mechanism of microstructure characteristic on electrical properties of as-deposited ITO thin films were investigated and analyzed in detail. Environmental sciences Yang Jingyuan verfasserin aut Han Dongao verfasserin aut Li Chan verfasserin aut Xu Yuting verfasserin aut Qiu Yang verfasserin aut In E3S Web of Conferences EDP Sciences, 2013 194, p 01039(2020) (DE-627)778372081 (DE-600)2755680-3 22671242 nnns volume:194, p 01039 year:2020 https://doi.org/10.1051/e3sconf/202019401039 kostenfrei https://doaj.org/article/5a06703aeeb04c1182e707ffe45065a1 kostenfrei https://www.e3s-conferences.org/articles/e3sconf/pdf/2020/54/e3sconf_icaeer2020_01039.pdf kostenfrei https://doaj.org/toc/2267-1242 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 194, p 01039 2020
spelling	10.1051/e3sconf/202019401039 doi (DE-627)DOAJ052446190 (DE-599)DOAJ5a06703aeeb04c1182e707ffe45065a1 DE-627 ger DE-627 rakwb eng fre GE1-350 Yang Chenggang verfasserin aut The influence of microstructure characteristics on electrical properties in ITO thin film 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier ITO thin films were deposited on sapphire substrates under different deposition parameters via ion-assistant electron beam evaporation method. Microstructure characteristics such as crystalline structure and surface morphology of as-deposited ITO thin films were studied by using X-ray diffraction spectroscopy, transmission electron microscopy and field emission scanning electron microscopy, as well as the index of sheet resistance, carrier concentration, carrier mobility and transmission in visible spectrum were tested by means of Hall effect tester and UV-VIS-NIR spectrophotometer, respectively. The influence and impact mechanism of microstructure characteristic on electrical properties of as-deposited ITO thin films were investigated and analyzed in detail. Environmental sciences Yang Jingyuan verfasserin aut Han Dongao verfasserin aut Li Chan verfasserin aut Xu Yuting verfasserin aut Qiu Yang verfasserin aut In E3S Web of Conferences EDP Sciences, 2013 194, p 01039(2020) (DE-627)778372081 (DE-600)2755680-3 22671242 nnns volume:194, p 01039 year:2020 https://doi.org/10.1051/e3sconf/202019401039 kostenfrei https://doaj.org/article/5a06703aeeb04c1182e707ffe45065a1 kostenfrei https://www.e3s-conferences.org/articles/e3sconf/pdf/2020/54/e3sconf_icaeer2020_01039.pdf kostenfrei https://doaj.org/toc/2267-1242 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 194, p 01039 2020
allfields_unstemmed	10.1051/e3sconf/202019401039 doi (DE-627)DOAJ052446190 (DE-599)DOAJ5a06703aeeb04c1182e707ffe45065a1 DE-627 ger DE-627 rakwb eng fre GE1-350 Yang Chenggang verfasserin aut The influence of microstructure characteristics on electrical properties in ITO thin film 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier ITO thin films were deposited on sapphire substrates under different deposition parameters via ion-assistant electron beam evaporation method. Microstructure characteristics such as crystalline structure and surface morphology of as-deposited ITO thin films were studied by using X-ray diffraction spectroscopy, transmission electron microscopy and field emission scanning electron microscopy, as well as the index of sheet resistance, carrier concentration, carrier mobility and transmission in visible spectrum were tested by means of Hall effect tester and UV-VIS-NIR spectrophotometer, respectively. The influence and impact mechanism of microstructure characteristic on electrical properties of as-deposited ITO thin films were investigated and analyzed in detail. Environmental sciences Yang Jingyuan verfasserin aut Han Dongao verfasserin aut Li Chan verfasserin aut Xu Yuting verfasserin aut Qiu Yang verfasserin aut In E3S Web of Conferences EDP Sciences, 2013 194, p 01039(2020) (DE-627)778372081 (DE-600)2755680-3 22671242 nnns volume:194, p 01039 year:2020 https://doi.org/10.1051/e3sconf/202019401039 kostenfrei https://doaj.org/article/5a06703aeeb04c1182e707ffe45065a1 kostenfrei https://www.e3s-conferences.org/articles/e3sconf/pdf/2020/54/e3sconf_icaeer2020_01039.pdf kostenfrei https://doaj.org/toc/2267-1242 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 194, p 01039 2020
allfieldsGer	10.1051/e3sconf/202019401039 doi (DE-627)DOAJ052446190 (DE-599)DOAJ5a06703aeeb04c1182e707ffe45065a1 DE-627 ger DE-627 rakwb eng fre GE1-350 Yang Chenggang verfasserin aut The influence of microstructure characteristics on electrical properties in ITO thin film 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier ITO thin films were deposited on sapphire substrates under different deposition parameters via ion-assistant electron beam evaporation method. Microstructure characteristics such as crystalline structure and surface morphology of as-deposited ITO thin films were studied by using X-ray diffraction spectroscopy, transmission electron microscopy and field emission scanning electron microscopy, as well as the index of sheet resistance, carrier concentration, carrier mobility and transmission in visible spectrum were tested by means of Hall effect tester and UV-VIS-NIR spectrophotometer, respectively. The influence and impact mechanism of microstructure characteristic on electrical properties of as-deposited ITO thin films were investigated and analyzed in detail. Environmental sciences Yang Jingyuan verfasserin aut Han Dongao verfasserin aut Li Chan verfasserin aut Xu Yuting verfasserin aut Qiu Yang verfasserin aut In E3S Web of Conferences EDP Sciences, 2013 194, p 01039(2020) (DE-627)778372081 (DE-600)2755680-3 22671242 nnns volume:194, p 01039 year:2020 https://doi.org/10.1051/e3sconf/202019401039 kostenfrei https://doaj.org/article/5a06703aeeb04c1182e707ffe45065a1 kostenfrei https://www.e3s-conferences.org/articles/e3sconf/pdf/2020/54/e3sconf_icaeer2020_01039.pdf kostenfrei https://doaj.org/toc/2267-1242 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 194, p 01039 2020
allfieldsSound	10.1051/e3sconf/202019401039 doi (DE-627)DOAJ052446190 (DE-599)DOAJ5a06703aeeb04c1182e707ffe45065a1 DE-627 ger DE-627 rakwb eng fre GE1-350 Yang Chenggang verfasserin aut The influence of microstructure characteristics on electrical properties in ITO thin film 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier ITO thin films were deposited on sapphire substrates under different deposition parameters via ion-assistant electron beam evaporation method. Microstructure characteristics such as crystalline structure and surface morphology of as-deposited ITO thin films were studied by using X-ray diffraction spectroscopy, transmission electron microscopy and field emission scanning electron microscopy, as well as the index of sheet resistance, carrier concentration, carrier mobility and transmission in visible spectrum were tested by means of Hall effect tester and UV-VIS-NIR spectrophotometer, respectively. The influence and impact mechanism of microstructure characteristic on electrical properties of as-deposited ITO thin films were investigated and analyzed in detail. Environmental sciences Yang Jingyuan verfasserin aut Han Dongao verfasserin aut Li Chan verfasserin aut Xu Yuting verfasserin aut Qiu Yang verfasserin aut In E3S Web of Conferences EDP Sciences, 2013 194, p 01039(2020) (DE-627)778372081 (DE-600)2755680-3 22671242 nnns volume:194, p 01039 year:2020 https://doi.org/10.1051/e3sconf/202019401039 kostenfrei https://doaj.org/article/5a06703aeeb04c1182e707ffe45065a1 kostenfrei https://www.e3s-conferences.org/articles/e3sconf/pdf/2020/54/e3sconf_icaeer2020_01039.pdf kostenfrei https://doaj.org/toc/2267-1242 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 194, p 01039 2020
language	English French
source	In E3S Web of Conferences 194, p 01039(2020) volume:194, p 01039 year:2020
sourceStr	In E3S Web of Conferences 194, p 01039(2020) volume:194, p 01039 year:2020
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Environmental sciences
isfreeaccess_bool	true
container_title	E3S Web of Conferences
authorswithroles_txt_mv	Yang Chenggang @@aut@@ Yang Jingyuan @@aut@@ Han Dongao @@aut@@ Li Chan @@aut@@ Xu Yuting @@aut@@ Qiu Yang @@aut@@
publishDateDaySort_date	2020-01-01T00:00:00Z
hierarchy_top_id	778372081
id	DOAJ052446190
language_de	englisch franzoesisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ052446190</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230308165400.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230227s2020 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1051/e3sconf/202019401039</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ052446190</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJ5a06703aeeb04c1182e707ffe45065a1</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield><subfield code="a">fre</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">GE1-350</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Yang Chenggang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="4"><subfield code="a">The influence of microstructure characteristics on electrical properties in ITO thin film</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2020</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">ITO thin films were deposited on sapphire substrates under different deposition parameters via ion-assistant electron beam evaporation method. Microstructure characteristics such as crystalline structure and surface morphology of as-deposited ITO thin films were studied by using X-ray diffraction spectroscopy, transmission electron microscopy and field emission scanning electron microscopy, as well as the index of sheet resistance, carrier concentration, carrier mobility and transmission in visible spectrum were tested by means of Hall effect tester and UV-VIS-NIR spectrophotometer, respectively. The influence and impact mechanism of microstructure characteristic on electrical properties of as-deposited ITO thin films were investigated and analyzed in detail.</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Environmental sciences</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Yang Jingyuan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Han Dongao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Li Chan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Xu Yuting</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Qiu Yang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">E3S Web of Conferences</subfield><subfield code="d">EDP Sciences, 2013</subfield><subfield code="g">194, p 01039(2020)</subfield><subfield code="w">(DE-627)778372081</subfield><subfield code="w">(DE-600)2755680-3</subfield><subfield code="x">22671242</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:194, p 01039</subfield><subfield code="g">year:2020</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1051/e3sconf/202019401039</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/5a06703aeeb04c1182e707ffe45065a1</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://www.e3s-conferences.org/articles/e3sconf/pdf/2020/54/e3sconf_icaeer2020_01039.pdf</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2267-1242</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">194, p 01039</subfield><subfield code="j">2020</subfield></datafield></record></collection>
callnumber-first	G - Geography, Anthropology, Recreation
author	Yang Chenggang
spellingShingle	Yang Chenggang misc GE1-350 misc Environmental sciences The influence of microstructure characteristics on electrical properties in ITO thin film
authorStr	Yang Chenggang
ppnlink_with_tag_str_mv	@@773@@(DE-627)778372081
format	electronic Article
delete_txt_mv	keep
author_role	aut aut aut aut aut aut
collection	DOAJ
remote_str	true
callnumber-label	GE1-350
illustrated	Not Illustrated
issn	22671242
topic_title	GE1-350 The influence of microstructure characteristics on electrical properties in ITO thin film
topic	misc GE1-350 misc Environmental sciences
topic_unstemmed	misc GE1-350 misc Environmental sciences
topic_browse	misc GE1-350 misc Environmental sciences
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	cr
hierarchy_parent_title	E3S Web of Conferences
hierarchy_parent_id	778372081
hierarchy_top_title	E3S Web of Conferences
isfreeaccess_txt	true
familylinks_str_mv	(DE-627)778372081 (DE-600)2755680-3
title	The influence of microstructure characteristics on electrical properties in ITO thin film
ctrlnum	(DE-627)DOAJ052446190 (DE-599)DOAJ5a06703aeeb04c1182e707ffe45065a1
title_full	The influence of microstructure characteristics on electrical properties in ITO thin film
author_sort	Yang Chenggang
journal	E3S Web of Conferences
journalStr	E3S Web of Conferences
callnumber-first-code	G
lang_code	eng fre
isOA_bool	true
recordtype	marc
publishDateSort	2020
contenttype_str_mv	txt
author_browse	Yang Chenggang Yang Jingyuan Han Dongao Li Chan Xu Yuting Qiu Yang
container_volume	194, p 01039
class	GE1-350
format_se	Elektronische Aufsätze
author-letter	Yang Chenggang
doi_str_mv	10.1051/e3sconf/202019401039
author2-role	verfasserin
title_sort	influence of microstructure characteristics on electrical properties in ito thin film
callnumber	GE1-350
title_auth	The influence of microstructure characteristics on electrical properties in ITO thin film
abstract	ITO thin films were deposited on sapphire substrates under different deposition parameters via ion-assistant electron beam evaporation method. Microstructure characteristics such as crystalline structure and surface morphology of as-deposited ITO thin films were studied by using X-ray diffraction spectroscopy, transmission electron microscopy and field emission scanning electron microscopy, as well as the index of sheet resistance, carrier concentration, carrier mobility and transmission in visible spectrum were tested by means of Hall effect tester and UV-VIS-NIR spectrophotometer, respectively. The influence and impact mechanism of microstructure characteristic on electrical properties of as-deposited ITO thin films were investigated and analyzed in detail.
abstractGer	ITO thin films were deposited on sapphire substrates under different deposition parameters via ion-assistant electron beam evaporation method. Microstructure characteristics such as crystalline structure and surface morphology of as-deposited ITO thin films were studied by using X-ray diffraction spectroscopy, transmission electron microscopy and field emission scanning electron microscopy, as well as the index of sheet resistance, carrier concentration, carrier mobility and transmission in visible spectrum were tested by means of Hall effect tester and UV-VIS-NIR spectrophotometer, respectively. The influence and impact mechanism of microstructure characteristic on electrical properties of as-deposited ITO thin films were investigated and analyzed in detail.
abstract_unstemmed	ITO thin films were deposited on sapphire substrates under different deposition parameters via ion-assistant electron beam evaporation method. Microstructure characteristics such as crystalline structure and surface morphology of as-deposited ITO thin films were studied by using X-ray diffraction spectroscopy, transmission electron microscopy and field emission scanning electron microscopy, as well as the index of sheet resistance, carrier concentration, carrier mobility and transmission in visible spectrum were tested by means of Hall effect tester and UV-VIS-NIR spectrophotometer, respectively. The influence and impact mechanism of microstructure characteristic on electrical properties of as-deposited ITO thin films were investigated and analyzed in detail.
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700
title_short	The influence of microstructure characteristics on electrical properties in ITO thin film
url	https://doi.org/10.1051/e3sconf/202019401039 https://doaj.org/article/5a06703aeeb04c1182e707ffe45065a1 https://www.e3s-conferences.org/articles/e3sconf/pdf/2020/54/e3sconf_icaeer2020_01039.pdf https://doaj.org/toc/2267-1242
remote_bool	true
author2	Yang Jingyuan Han Dongao Li Chan Xu Yuting Qiu Yang
author2Str	Yang Jingyuan Han Dongao Li Chan Xu Yuting Qiu Yang
ppnlink	778372081
callnumber-subject	GE - Environmental Sciences
mediatype_str_mv	c
isOA_txt	true
hochschulschrift_bool	false
doi_str	10.1051/e3sconf/202019401039
callnumber-a	GE1-350
up_date	2024-07-04T01:05:35.927Z
_version_	1803608534215032832
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ052446190</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230308165400.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230227s2020 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1051/e3sconf/202019401039</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ052446190</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJ5a06703aeeb04c1182e707ffe45065a1</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield><subfield code="a">fre</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">GE1-350</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Yang Chenggang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="4"><subfield code="a">The influence of microstructure characteristics on electrical properties in ITO thin film</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2020</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">ITO thin films were deposited on sapphire substrates under different deposition parameters via ion-assistant electron beam evaporation method. Microstructure characteristics such as crystalline structure and surface morphology of as-deposited ITO thin films were studied by using X-ray diffraction spectroscopy, transmission electron microscopy and field emission scanning electron microscopy, as well as the index of sheet resistance, carrier concentration, carrier mobility and transmission in visible spectrum were tested by means of Hall effect tester and UV-VIS-NIR spectrophotometer, respectively. The influence and impact mechanism of microstructure characteristic on electrical properties of as-deposited ITO thin films were investigated and analyzed in detail.</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Environmental sciences</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Yang Jingyuan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Han Dongao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Li Chan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Xu Yuting</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Qiu Yang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">E3S Web of Conferences</subfield><subfield code="d">EDP Sciences, 2013</subfield><subfield code="g">194, p 01039(2020)</subfield><subfield code="w">(DE-627)778372081</subfield><subfield code="w">(DE-600)2755680-3</subfield><subfield code="x">22671242</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:194, p 01039</subfield><subfield code="g">year:2020</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1051/e3sconf/202019401039</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/5a06703aeeb04c1182e707ffe45065a1</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://www.e3s-conferences.org/articles/e3sconf/pdf/2020/54/e3sconf_icaeer2020_01039.pdf</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2267-1242</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">194, p 01039</subfield><subfield code="j">2020</subfield></datafield></record></collection>
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