Two-Dimensional Hybrid Composites of SnS<sub<2</sub< Nanosheets Array Film with Graphene for Enhanced Photoelectric Performance
Two-dimensional (2D) metal dichalcogenides have attracted considerable attention for use in photoelectric devices due to their unique layer structure and strong light-matter interaction. In this paper, vertically grown SnS<sub<2</sub< nanosheets array film was synthesized by a facile che...
Ausführliche Beschreibung
Autor*in: |
Feier Fang [verfasserIn] Henan Li [verfasserIn] Huizhen Yao [verfasserIn] Ke Jiang [verfasserIn] Zexiang Liu [verfasserIn] Congjian Lin [verfasserIn] Fuming Chen [verfasserIn] Ye Wang [verfasserIn] Lai Liu [verfasserIn] |
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E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2019 |
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Übergeordnetes Werk: |
In: Nanomaterials - MDPI AG, 2012, 9(2019), 8, p 1122 |
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Übergeordnetes Werk: |
volume:9 ; year:2019 ; number:8, p 1122 |
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DOI / URN: |
10.3390/nano9081122 |
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Katalog-ID: |
DOAJ054434084 |
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10.3390/nano9081122 doi (DE-627)DOAJ054434084 (DE-599)DOAJ9509eac843d74d82a91b9414c3c204e1 DE-627 ger DE-627 rakwb eng QD1-999 Feier Fang verfasserin aut Two-Dimensional Hybrid Composites of SnS<sub<2</sub< Nanosheets Array Film with Graphene for Enhanced Photoelectric Performance 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Two-dimensional (2D) metal dichalcogenides have attracted considerable attention for use in photoelectric devices due to their unique layer structure and strong light-matter interaction. In this paper, vertically grown SnS<sub<2</sub< nanosheets array film was synthesized by a facile chemical bath deposition (CBD). The effects of deposition time and annealing temperature on the quality of SnS<sub<2</sub< films was investigated in detail. By optimizing the preparation conditions, the SnS<sub<2</sub< array film exhibited efficient photoelectric detection performance under sunlight. Furthermore, in order to improve the performance of the photodetector based on SnS<sub<2</sub< nanosheets film, a transparent graphene film was introduced as the hole-transport layer by wet-chemical method directly transferring techniques. Graphene/SnS<sub<2</sub< nanosheets array film heterojunction photodetectors exhibit enhanced photoresponsivity. The light on/off ratio of the photodetector based on graphene/SnS<sub<2</sub< was 1.53, about 1.4 times higher than that of the pristine SnS<sub<2</sub< array films. The improved photoresponse performance suggested that the effective heterojunction between vertical SnS<sub<2</sub< nanosheets array film and graphene suppresses the recombination of photogenerated carriers. The results indicate that the graphene/SnS<sub<2</sub< heterojunction photodetectors have great potential in photodetection devices. graphene/SnS<sub<2</sub< heterojunction charge separation photodetectors Chemistry Henan Li verfasserin aut Huizhen Yao verfasserin aut Ke Jiang verfasserin aut Zexiang Liu verfasserin aut Congjian Lin verfasserin aut Fuming Chen verfasserin aut Ye Wang verfasserin aut Lai Liu verfasserin aut In Nanomaterials MDPI AG, 2012 9(2019), 8, p 1122 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:9 year:2019 number:8, p 1122 https://doi.org/10.3390/nano9081122 kostenfrei https://doaj.org/article/9509eac843d74d82a91b9414c3c204e1 kostenfrei https://www.mdpi.com/2079-4991/9/8/1122 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 8, p 1122 |
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10.3390/nano9081122 doi (DE-627)DOAJ054434084 (DE-599)DOAJ9509eac843d74d82a91b9414c3c204e1 DE-627 ger DE-627 rakwb eng QD1-999 Feier Fang verfasserin aut Two-Dimensional Hybrid Composites of SnS<sub<2</sub< Nanosheets Array Film with Graphene for Enhanced Photoelectric Performance 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Two-dimensional (2D) metal dichalcogenides have attracted considerable attention for use in photoelectric devices due to their unique layer structure and strong light-matter interaction. In this paper, vertically grown SnS<sub<2</sub< nanosheets array film was synthesized by a facile chemical bath deposition (CBD). The effects of deposition time and annealing temperature on the quality of SnS<sub<2</sub< films was investigated in detail. By optimizing the preparation conditions, the SnS<sub<2</sub< array film exhibited efficient photoelectric detection performance under sunlight. Furthermore, in order to improve the performance of the photodetector based on SnS<sub<2</sub< nanosheets film, a transparent graphene film was introduced as the hole-transport layer by wet-chemical method directly transferring techniques. Graphene/SnS<sub<2</sub< nanosheets array film heterojunction photodetectors exhibit enhanced photoresponsivity. The light on/off ratio of the photodetector based on graphene/SnS<sub<2</sub< was 1.53, about 1.4 times higher than that of the pristine SnS<sub<2</sub< array films. The improved photoresponse performance suggested that the effective heterojunction between vertical SnS<sub<2</sub< nanosheets array film and graphene suppresses the recombination of photogenerated carriers. The results indicate that the graphene/SnS<sub<2</sub< heterojunction photodetectors have great potential in photodetection devices. graphene/SnS<sub<2</sub< heterojunction charge separation photodetectors Chemistry Henan Li verfasserin aut Huizhen Yao verfasserin aut Ke Jiang verfasserin aut Zexiang Liu verfasserin aut Congjian Lin verfasserin aut Fuming Chen verfasserin aut Ye Wang verfasserin aut Lai Liu verfasserin aut In Nanomaterials MDPI AG, 2012 9(2019), 8, p 1122 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:9 year:2019 number:8, p 1122 https://doi.org/10.3390/nano9081122 kostenfrei https://doaj.org/article/9509eac843d74d82a91b9414c3c204e1 kostenfrei https://www.mdpi.com/2079-4991/9/8/1122 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 8, p 1122 |
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10.3390/nano9081122 doi (DE-627)DOAJ054434084 (DE-599)DOAJ9509eac843d74d82a91b9414c3c204e1 DE-627 ger DE-627 rakwb eng QD1-999 Feier Fang verfasserin aut Two-Dimensional Hybrid Composites of SnS<sub<2</sub< Nanosheets Array Film with Graphene for Enhanced Photoelectric Performance 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Two-dimensional (2D) metal dichalcogenides have attracted considerable attention for use in photoelectric devices due to their unique layer structure and strong light-matter interaction. In this paper, vertically grown SnS<sub<2</sub< nanosheets array film was synthesized by a facile chemical bath deposition (CBD). The effects of deposition time and annealing temperature on the quality of SnS<sub<2</sub< films was investigated in detail. By optimizing the preparation conditions, the SnS<sub<2</sub< array film exhibited efficient photoelectric detection performance under sunlight. Furthermore, in order to improve the performance of the photodetector based on SnS<sub<2</sub< nanosheets film, a transparent graphene film was introduced as the hole-transport layer by wet-chemical method directly transferring techniques. Graphene/SnS<sub<2</sub< nanosheets array film heterojunction photodetectors exhibit enhanced photoresponsivity. The light on/off ratio of the photodetector based on graphene/SnS<sub<2</sub< was 1.53, about 1.4 times higher than that of the pristine SnS<sub<2</sub< array films. The improved photoresponse performance suggested that the effective heterojunction between vertical SnS<sub<2</sub< nanosheets array film and graphene suppresses the recombination of photogenerated carriers. The results indicate that the graphene/SnS<sub<2</sub< heterojunction photodetectors have great potential in photodetection devices. graphene/SnS<sub<2</sub< heterojunction charge separation photodetectors Chemistry Henan Li verfasserin aut Huizhen Yao verfasserin aut Ke Jiang verfasserin aut Zexiang Liu verfasserin aut Congjian Lin verfasserin aut Fuming Chen verfasserin aut Ye Wang verfasserin aut Lai Liu verfasserin aut In Nanomaterials MDPI AG, 2012 9(2019), 8, p 1122 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:9 year:2019 number:8, p 1122 https://doi.org/10.3390/nano9081122 kostenfrei https://doaj.org/article/9509eac843d74d82a91b9414c3c204e1 kostenfrei https://www.mdpi.com/2079-4991/9/8/1122 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 8, p 1122 |
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10.3390/nano9081122 doi (DE-627)DOAJ054434084 (DE-599)DOAJ9509eac843d74d82a91b9414c3c204e1 DE-627 ger DE-627 rakwb eng QD1-999 Feier Fang verfasserin aut Two-Dimensional Hybrid Composites of SnS<sub<2</sub< Nanosheets Array Film with Graphene for Enhanced Photoelectric Performance 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Two-dimensional (2D) metal dichalcogenides have attracted considerable attention for use in photoelectric devices due to their unique layer structure and strong light-matter interaction. In this paper, vertically grown SnS<sub<2</sub< nanosheets array film was synthesized by a facile chemical bath deposition (CBD). The effects of deposition time and annealing temperature on the quality of SnS<sub<2</sub< films was investigated in detail. By optimizing the preparation conditions, the SnS<sub<2</sub< array film exhibited efficient photoelectric detection performance under sunlight. Furthermore, in order to improve the performance of the photodetector based on SnS<sub<2</sub< nanosheets film, a transparent graphene film was introduced as the hole-transport layer by wet-chemical method directly transferring techniques. Graphene/SnS<sub<2</sub< nanosheets array film heterojunction photodetectors exhibit enhanced photoresponsivity. The light on/off ratio of the photodetector based on graphene/SnS<sub<2</sub< was 1.53, about 1.4 times higher than that of the pristine SnS<sub<2</sub< array films. The improved photoresponse performance suggested that the effective heterojunction between vertical SnS<sub<2</sub< nanosheets array film and graphene suppresses the recombination of photogenerated carriers. The results indicate that the graphene/SnS<sub<2</sub< heterojunction photodetectors have great potential in photodetection devices. graphene/SnS<sub<2</sub< heterojunction charge separation photodetectors Chemistry Henan Li verfasserin aut Huizhen Yao verfasserin aut Ke Jiang verfasserin aut Zexiang Liu verfasserin aut Congjian Lin verfasserin aut Fuming Chen verfasserin aut Ye Wang verfasserin aut Lai Liu verfasserin aut In Nanomaterials MDPI AG, 2012 9(2019), 8, p 1122 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:9 year:2019 number:8, p 1122 https://doi.org/10.3390/nano9081122 kostenfrei https://doaj.org/article/9509eac843d74d82a91b9414c3c204e1 kostenfrei https://www.mdpi.com/2079-4991/9/8/1122 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 8, p 1122 |
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10.3390/nano9081122 doi (DE-627)DOAJ054434084 (DE-599)DOAJ9509eac843d74d82a91b9414c3c204e1 DE-627 ger DE-627 rakwb eng QD1-999 Feier Fang verfasserin aut Two-Dimensional Hybrid Composites of SnS<sub<2</sub< Nanosheets Array Film with Graphene for Enhanced Photoelectric Performance 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Two-dimensional (2D) metal dichalcogenides have attracted considerable attention for use in photoelectric devices due to their unique layer structure and strong light-matter interaction. In this paper, vertically grown SnS<sub<2</sub< nanosheets array film was synthesized by a facile chemical bath deposition (CBD). The effects of deposition time and annealing temperature on the quality of SnS<sub<2</sub< films was investigated in detail. By optimizing the preparation conditions, the SnS<sub<2</sub< array film exhibited efficient photoelectric detection performance under sunlight. Furthermore, in order to improve the performance of the photodetector based on SnS<sub<2</sub< nanosheets film, a transparent graphene film was introduced as the hole-transport layer by wet-chemical method directly transferring techniques. Graphene/SnS<sub<2</sub< nanosheets array film heterojunction photodetectors exhibit enhanced photoresponsivity. The light on/off ratio of the photodetector based on graphene/SnS<sub<2</sub< was 1.53, about 1.4 times higher than that of the pristine SnS<sub<2</sub< array films. The improved photoresponse performance suggested that the effective heterojunction between vertical SnS<sub<2</sub< nanosheets array film and graphene suppresses the recombination of photogenerated carriers. The results indicate that the graphene/SnS<sub<2</sub< heterojunction photodetectors have great potential in photodetection devices. graphene/SnS<sub<2</sub< heterojunction charge separation photodetectors Chemistry Henan Li verfasserin aut Huizhen Yao verfasserin aut Ke Jiang verfasserin aut Zexiang Liu verfasserin aut Congjian Lin verfasserin aut Fuming Chen verfasserin aut Ye Wang verfasserin aut Lai Liu verfasserin aut In Nanomaterials MDPI AG, 2012 9(2019), 8, p 1122 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:9 year:2019 number:8, p 1122 https://doi.org/10.3390/nano9081122 kostenfrei https://doaj.org/article/9509eac843d74d82a91b9414c3c204e1 kostenfrei https://www.mdpi.com/2079-4991/9/8/1122 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 8, p 1122 |
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Two-Dimensional Hybrid Composites of SnS<sub<2</sub< Nanosheets Array Film with Graphene for Enhanced Photoelectric Performance |
abstract |
Two-dimensional (2D) metal dichalcogenides have attracted considerable attention for use in photoelectric devices due to their unique layer structure and strong light-matter interaction. In this paper, vertically grown SnS<sub<2</sub< nanosheets array film was synthesized by a facile chemical bath deposition (CBD). The effects of deposition time and annealing temperature on the quality of SnS<sub<2</sub< films was investigated in detail. By optimizing the preparation conditions, the SnS<sub<2</sub< array film exhibited efficient photoelectric detection performance under sunlight. Furthermore, in order to improve the performance of the photodetector based on SnS<sub<2</sub< nanosheets film, a transparent graphene film was introduced as the hole-transport layer by wet-chemical method directly transferring techniques. Graphene/SnS<sub<2</sub< nanosheets array film heterojunction photodetectors exhibit enhanced photoresponsivity. The light on/off ratio of the photodetector based on graphene/SnS<sub<2</sub< was 1.53, about 1.4 times higher than that of the pristine SnS<sub<2</sub< array films. The improved photoresponse performance suggested that the effective heterojunction between vertical SnS<sub<2</sub< nanosheets array film and graphene suppresses the recombination of photogenerated carriers. The results indicate that the graphene/SnS<sub<2</sub< heterojunction photodetectors have great potential in photodetection devices. |
abstractGer |
Two-dimensional (2D) metal dichalcogenides have attracted considerable attention for use in photoelectric devices due to their unique layer structure and strong light-matter interaction. In this paper, vertically grown SnS<sub<2</sub< nanosheets array film was synthesized by a facile chemical bath deposition (CBD). The effects of deposition time and annealing temperature on the quality of SnS<sub<2</sub< films was investigated in detail. By optimizing the preparation conditions, the SnS<sub<2</sub< array film exhibited efficient photoelectric detection performance under sunlight. Furthermore, in order to improve the performance of the photodetector based on SnS<sub<2</sub< nanosheets film, a transparent graphene film was introduced as the hole-transport layer by wet-chemical method directly transferring techniques. Graphene/SnS<sub<2</sub< nanosheets array film heterojunction photodetectors exhibit enhanced photoresponsivity. The light on/off ratio of the photodetector based on graphene/SnS<sub<2</sub< was 1.53, about 1.4 times higher than that of the pristine SnS<sub<2</sub< array films. The improved photoresponse performance suggested that the effective heterojunction between vertical SnS<sub<2</sub< nanosheets array film and graphene suppresses the recombination of photogenerated carriers. The results indicate that the graphene/SnS<sub<2</sub< heterojunction photodetectors have great potential in photodetection devices. |
abstract_unstemmed |
Two-dimensional (2D) metal dichalcogenides have attracted considerable attention for use in photoelectric devices due to their unique layer structure and strong light-matter interaction. In this paper, vertically grown SnS<sub<2</sub< nanosheets array film was synthesized by a facile chemical bath deposition (CBD). The effects of deposition time and annealing temperature on the quality of SnS<sub<2</sub< films was investigated in detail. By optimizing the preparation conditions, the SnS<sub<2</sub< array film exhibited efficient photoelectric detection performance under sunlight. Furthermore, in order to improve the performance of the photodetector based on SnS<sub<2</sub< nanosheets film, a transparent graphene film was introduced as the hole-transport layer by wet-chemical method directly transferring techniques. Graphene/SnS<sub<2</sub< nanosheets array film heterojunction photodetectors exhibit enhanced photoresponsivity. The light on/off ratio of the photodetector based on graphene/SnS<sub<2</sub< was 1.53, about 1.4 times higher than that of the pristine SnS<sub<2</sub< array films. The improved photoresponse performance suggested that the effective heterojunction between vertical SnS<sub<2</sub< nanosheets array film and graphene suppresses the recombination of photogenerated carriers. The results indicate that the graphene/SnS<sub<2</sub< heterojunction photodetectors have great potential in photodetection devices. |
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In this paper, vertically grown SnS<sub<2</sub< nanosheets array film was synthesized by a facile chemical bath deposition (CBD). The effects of deposition time and annealing temperature on the quality of SnS<sub<2</sub< films was investigated in detail. By optimizing the preparation conditions, the SnS<sub<2</sub< array film exhibited efficient photoelectric detection performance under sunlight. Furthermore, in order to improve the performance of the photodetector based on SnS<sub<2</sub< nanosheets film, a transparent graphene film was introduced as the hole-transport layer by wet-chemical method directly transferring techniques. Graphene/SnS<sub<2</sub< nanosheets array film heterojunction photodetectors exhibit enhanced photoresponsivity. The light on/off ratio of the photodetector based on graphene/SnS<sub<2</sub< was 1.53, about 1.4 times higher than that of the pristine SnS<sub<2</sub< array films. The improved photoresponse performance suggested that the effective heterojunction between vertical SnS<sub<2</sub< nanosheets array film and graphene suppresses the recombination of photogenerated carriers. 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