Three-Dimensional Finite Element Analysis and Characterization of Quasi-Surface Acoustic Wave Resonators

In this work, three-dimensional finite element analysis (3D FEA) of quasi-surface acoustic wave (QSAW) resonators with high accuracy is reported. The QSAW resonators consist of simple molybdenum (Mo) interdigitated transducers (IDT) on solidly mounted stacked layers of AlN/Mo/Si. Different to the SAW resonators operating in the piezoelectric substrates, the reported resonators are operating in the QSAW mode, since the IDT-excited Rayleigh waves not only propagate in the thin piezoelectric layer of AlN, but also penetrate the Si substrate. Compared with the commonly used two-dimensional (2D) FEA approach, the 3D FEA method reported in this work shows high accuracy, in terms of the resonant frequency, temperature coefficient of frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<T</mi<<mi<C</mi<<mi<F</mi<</mrow<</semantics<</math<</inline-formula<), effective coupling coefficient (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msubsup<<mi<k</mi<<mrow<<mi<e</mi<<mi<f</mi<<mi<f</mi<</mrow<<mn<2</mn<</msubsup<</semantics<</math<</inline-formula<) and frequency response. The fabricated QSAW resonator has demonstrated a <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msubsup<<mi<k</mi<<mrow<<mi<e</mi<<mi<f</mi<<mi<f</mi<</mrow<<mn<2</mn<</msubsup<</semantics<</math<</inline-formula< of 0.291%, series resonant frequency of 422.50 MHz, and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<T</mi<<mi<C</mi<<mi<F</mi<</mrow<</semantics<</math<</inline-formula< of −23.418 ppm/°C in the temperature range between 30 °C and 150 °C, for the design of wavelength at 10.4 <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mi mathvariant="sans-serif"<μ</mi<</semantics<</math<</inline-formula<m. The measurement results agree well with the simulations. Moreover, the QSAW resonators are more mechanically robust than lamb wave devices and can be integrated with silicon-based film bulk acoustic resonator (FBAR) devices to offer multi-frequency function in a single chip. Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Wen Chen [verfasserIn] Linwei Zhang [verfasserIn] Shangshu Yang [verfasserIn] Wenhan Jia [verfasserIn] Songsong Zhang [verfasserIn] Yuandong Gu [verfasserIn] Liang Lou [verfasserIn] Guoqiang Wu [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2021

Schlagwörter:	quasi-surface acoustic wave (QSAW) resonator microelectromechnical systems (MEMS) finite element analysis aluminum nitride

Übergeordnetes Werk:	In: Micromachines - MDPI AG, 2010, 12(2021), 9, p 1118
Übergeordnetes Werk:	volume:12 ; year:2021 ; number:9, p 1118

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/mi12091118

Katalog-ID:	DOAJ054807247

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520			\|a In this work, three-dimensional finite element analysis (3D FEA) of quasi-surface acoustic wave (QSAW) resonators with high accuracy is reported. The QSAW resonators consist of simple molybdenum (Mo) interdigitated transducers (IDT) on solidly mounted stacked layers of AlN/Mo/Si. Different to the SAW resonators operating in the piezoelectric substrates, the reported resonators are operating in the QSAW mode, since the IDT-excited Rayleigh waves not only propagate in the thin piezoelectric layer of AlN, but also penetrate the Si substrate. Compared with the commonly used two-dimensional (2D) FEA approach, the 3D FEA method reported in this work shows high accuracy, in terms of the resonant frequency, temperature coefficient of frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<T</mi<<mi<C</mi<<mi<F</mi<</mrow<</semantics<</math<</inline-formula<), effective coupling coefficient (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msubsup<<mi<k</mi<<mrow<<mi<e</mi<<mi<f</mi<<mi<f</mi<</mrow<<mn<2</mn<</msubsup<</semantics<</math<</inline-formula<) and frequency response. The fabricated QSAW resonator has demonstrated a <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msubsup<<mi<k</mi<<mrow<<mi<e</mi<<mi<f</mi<<mi<f</mi<</mrow<<mn<2</mn<</msubsup<</semantics<</math<</inline-formula< of 0.291%, series resonant frequency of 422.50 MHz, and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<T</mi<<mi<C</mi<<mi<F</mi<</mrow<</semantics<</math<</inline-formula< of −23.418 ppm/°C in the temperature range between 30 °C and 150 °C, for the design of wavelength at 10.4 <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mi mathvariant="sans-serif"<μ</mi<</semantics<</math<</inline-formula<m. The measurement results agree well with the simulations. Moreover, the QSAW resonators are more mechanically robust than lamb wave devices and can be integrated with silicon-based film bulk acoustic resonator (FBAR) devices to offer multi-frequency function in a single chip.
650		4	\|a quasi-surface acoustic wave (QSAW) resonator
650		4	\|a microelectromechnical systems (MEMS)
650		4	\|a finite element analysis
650		4	\|a aluminum nitride
653		0	\|a Mechanical engineering and machinery
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700	0		\|a Shangshu Yang \|e verfasserin \|4 aut
700	0		\|a Wenhan Jia \|e verfasserin \|4 aut
700	0		\|a Songsong Zhang \|e verfasserin \|4 aut
700	0		\|a Yuandong Gu \|e verfasserin \|4 aut
700	0		\|a Liang Lou \|e verfasserin \|4 aut
700	0		\|a Guoqiang Wu \|e verfasserin \|4 aut
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allfields	10.3390/mi12091118 doi (DE-627)DOAJ054807247 (DE-599)DOAJ81611945cb63499f867ec2deb5480872 DE-627 ger DE-627 rakwb eng TJ1-1570 Wen Chen verfasserin aut Three-Dimensional Finite Element Analysis and Characterization of Quasi-Surface Acoustic Wave Resonators 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this work, three-dimensional finite element analysis (3D FEA) of quasi-surface acoustic wave (QSAW) resonators with high accuracy is reported. The QSAW resonators consist of simple molybdenum (Mo) interdigitated transducers (IDT) on solidly mounted stacked layers of AlN/Mo/Si. Different to the SAW resonators operating in the piezoelectric substrates, the reported resonators are operating in the QSAW mode, since the IDT-excited Rayleigh waves not only propagate in the thin piezoelectric layer of AlN, but also penetrate the Si substrate. Compared with the commonly used two-dimensional (2D) FEA approach, the 3D FEA method reported in this work shows high accuracy, in terms of the resonant frequency, temperature coefficient of frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<T</mi<<mi<C</mi<<mi<F</mi<</mrow<</semantics<</math<</inline-formula<), effective coupling coefficient (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msubsup<<mi<k</mi<<mrow<<mi<e</mi<<mi<f</mi<<mi<f</mi<</mrow<<mn<2</mn<</msubsup<</semantics<</math<</inline-formula<) and frequency response. The fabricated QSAW resonator has demonstrated a <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msubsup<<mi<k</mi<<mrow<<mi<e</mi<<mi<f</mi<<mi<f</mi<</mrow<<mn<2</mn<</msubsup<</semantics<</math<</inline-formula< of 0.291%, series resonant frequency of 422.50 MHz, and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<T</mi<<mi<C</mi<<mi<F</mi<</mrow<</semantics<</math<</inline-formula< of −23.418 ppm/°C in the temperature range between 30 °C and 150 °C, for the design of wavelength at 10.4 <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mi mathvariant="sans-serif"<μ</mi<</semantics<</math<</inline-formula<m. The measurement results agree well with the simulations. Moreover, the QSAW resonators are more mechanically robust than lamb wave devices and can be integrated with silicon-based film bulk acoustic resonator (FBAR) devices to offer multi-frequency function in a single chip. quasi-surface acoustic wave (QSAW) resonator microelectromechnical systems (MEMS) finite element analysis aluminum nitride Mechanical engineering and machinery Linwei Zhang verfasserin aut Shangshu Yang verfasserin aut Wenhan Jia verfasserin aut Songsong Zhang verfasserin aut Yuandong Gu verfasserin aut Liang Lou verfasserin aut Guoqiang Wu verfasserin aut In Micromachines MDPI AG, 2010 12(2021), 9, p 1118 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:12 year:2021 number:9, p 1118 https://doi.org/10.3390/mi12091118 kostenfrei https://doaj.org/article/81611945cb63499f867ec2deb5480872 kostenfrei https://www.mdpi.com/2072-666X/12/9/1118 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2021 9, p 1118
spelling	10.3390/mi12091118 doi (DE-627)DOAJ054807247 (DE-599)DOAJ81611945cb63499f867ec2deb5480872 DE-627 ger DE-627 rakwb eng TJ1-1570 Wen Chen verfasserin aut Three-Dimensional Finite Element Analysis and Characterization of Quasi-Surface Acoustic Wave Resonators 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this work, three-dimensional finite element analysis (3D FEA) of quasi-surface acoustic wave (QSAW) resonators with high accuracy is reported. The QSAW resonators consist of simple molybdenum (Mo) interdigitated transducers (IDT) on solidly mounted stacked layers of AlN/Mo/Si. Different to the SAW resonators operating in the piezoelectric substrates, the reported resonators are operating in the QSAW mode, since the IDT-excited Rayleigh waves not only propagate in the thin piezoelectric layer of AlN, but also penetrate the Si substrate. Compared with the commonly used two-dimensional (2D) FEA approach, the 3D FEA method reported in this work shows high accuracy, in terms of the resonant frequency, temperature coefficient of frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<T</mi<<mi<C</mi<<mi<F</mi<</mrow<</semantics<</math<</inline-formula<), effective coupling coefficient (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msubsup<<mi<k</mi<<mrow<<mi<e</mi<<mi<f</mi<<mi<f</mi<</mrow<<mn<2</mn<</msubsup<</semantics<</math<</inline-formula<) and frequency response. The fabricated QSAW resonator has demonstrated a <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msubsup<<mi<k</mi<<mrow<<mi<e</mi<<mi<f</mi<<mi<f</mi<</mrow<<mn<2</mn<</msubsup<</semantics<</math<</inline-formula< of 0.291%, series resonant frequency of 422.50 MHz, and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<T</mi<<mi<C</mi<<mi<F</mi<</mrow<</semantics<</math<</inline-formula< of −23.418 ppm/°C in the temperature range between 30 °C and 150 °C, for the design of wavelength at 10.4 <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mi mathvariant="sans-serif"<μ</mi<</semantics<</math<</inline-formula<m. The measurement results agree well with the simulations. Moreover, the QSAW resonators are more mechanically robust than lamb wave devices and can be integrated with silicon-based film bulk acoustic resonator (FBAR) devices to offer multi-frequency function in a single chip. quasi-surface acoustic wave (QSAW) resonator microelectromechnical systems (MEMS) finite element analysis aluminum nitride Mechanical engineering and machinery Linwei Zhang verfasserin aut Shangshu Yang verfasserin aut Wenhan Jia verfasserin aut Songsong Zhang verfasserin aut Yuandong Gu verfasserin aut Liang Lou verfasserin aut Guoqiang Wu verfasserin aut In Micromachines MDPI AG, 2010 12(2021), 9, p 1118 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:12 year:2021 number:9, p 1118 https://doi.org/10.3390/mi12091118 kostenfrei https://doaj.org/article/81611945cb63499f867ec2deb5480872 kostenfrei https://www.mdpi.com/2072-666X/12/9/1118 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2021 9, p 1118
allfields_unstemmed	10.3390/mi12091118 doi (DE-627)DOAJ054807247 (DE-599)DOAJ81611945cb63499f867ec2deb5480872 DE-627 ger DE-627 rakwb eng TJ1-1570 Wen Chen verfasserin aut Three-Dimensional Finite Element Analysis and Characterization of Quasi-Surface Acoustic Wave Resonators 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this work, three-dimensional finite element analysis (3D FEA) of quasi-surface acoustic wave (QSAW) resonators with high accuracy is reported. The QSAW resonators consist of simple molybdenum (Mo) interdigitated transducers (IDT) on solidly mounted stacked layers of AlN/Mo/Si. Different to the SAW resonators operating in the piezoelectric substrates, the reported resonators are operating in the QSAW mode, since the IDT-excited Rayleigh waves not only propagate in the thin piezoelectric layer of AlN, but also penetrate the Si substrate. Compared with the commonly used two-dimensional (2D) FEA approach, the 3D FEA method reported in this work shows high accuracy, in terms of the resonant frequency, temperature coefficient of frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<T</mi<<mi<C</mi<<mi<F</mi<</mrow<</semantics<</math<</inline-formula<), effective coupling coefficient (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msubsup<<mi<k</mi<<mrow<<mi<e</mi<<mi<f</mi<<mi<f</mi<</mrow<<mn<2</mn<</msubsup<</semantics<</math<</inline-formula<) and frequency response. The fabricated QSAW resonator has demonstrated a <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msubsup<<mi<k</mi<<mrow<<mi<e</mi<<mi<f</mi<<mi<f</mi<</mrow<<mn<2</mn<</msubsup<</semantics<</math<</inline-formula< of 0.291%, series resonant frequency of 422.50 MHz, and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<T</mi<<mi<C</mi<<mi<F</mi<</mrow<</semantics<</math<</inline-formula< of −23.418 ppm/°C in the temperature range between 30 °C and 150 °C, for the design of wavelength at 10.4 <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mi mathvariant="sans-serif"<μ</mi<</semantics<</math<</inline-formula<m. The measurement results agree well with the simulations. Moreover, the QSAW resonators are more mechanically robust than lamb wave devices and can be integrated with silicon-based film bulk acoustic resonator (FBAR) devices to offer multi-frequency function in a single chip. quasi-surface acoustic wave (QSAW) resonator microelectromechnical systems (MEMS) finite element analysis aluminum nitride Mechanical engineering and machinery Linwei Zhang verfasserin aut Shangshu Yang verfasserin aut Wenhan Jia verfasserin aut Songsong Zhang verfasserin aut Yuandong Gu verfasserin aut Liang Lou verfasserin aut Guoqiang Wu verfasserin aut In Micromachines MDPI AG, 2010 12(2021), 9, p 1118 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:12 year:2021 number:9, p 1118 https://doi.org/10.3390/mi12091118 kostenfrei https://doaj.org/article/81611945cb63499f867ec2deb5480872 kostenfrei https://www.mdpi.com/2072-666X/12/9/1118 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2021 9, p 1118
allfieldsGer	10.3390/mi12091118 doi (DE-627)DOAJ054807247 (DE-599)DOAJ81611945cb63499f867ec2deb5480872 DE-627 ger DE-627 rakwb eng TJ1-1570 Wen Chen verfasserin aut Three-Dimensional Finite Element Analysis and Characterization of Quasi-Surface Acoustic Wave Resonators 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this work, three-dimensional finite element analysis (3D FEA) of quasi-surface acoustic wave (QSAW) resonators with high accuracy is reported. The QSAW resonators consist of simple molybdenum (Mo) interdigitated transducers (IDT) on solidly mounted stacked layers of AlN/Mo/Si. Different to the SAW resonators operating in the piezoelectric substrates, the reported resonators are operating in the QSAW mode, since the IDT-excited Rayleigh waves not only propagate in the thin piezoelectric layer of AlN, but also penetrate the Si substrate. Compared with the commonly used two-dimensional (2D) FEA approach, the 3D FEA method reported in this work shows high accuracy, in terms of the resonant frequency, temperature coefficient of frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<T</mi<<mi<C</mi<<mi<F</mi<</mrow<</semantics<</math<</inline-formula<), effective coupling coefficient (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msubsup<<mi<k</mi<<mrow<<mi<e</mi<<mi<f</mi<<mi<f</mi<</mrow<<mn<2</mn<</msubsup<</semantics<</math<</inline-formula<) and frequency response. The fabricated QSAW resonator has demonstrated a <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msubsup<<mi<k</mi<<mrow<<mi<e</mi<<mi<f</mi<<mi<f</mi<</mrow<<mn<2</mn<</msubsup<</semantics<</math<</inline-formula< of 0.291%, series resonant frequency of 422.50 MHz, and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<T</mi<<mi<C</mi<<mi<F</mi<</mrow<</semantics<</math<</inline-formula< of −23.418 ppm/°C in the temperature range between 30 °C and 150 °C, for the design of wavelength at 10.4 <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mi mathvariant="sans-serif"<μ</mi<</semantics<</math<</inline-formula<m. The measurement results agree well with the simulations. Moreover, the QSAW resonators are more mechanically robust than lamb wave devices and can be integrated with silicon-based film bulk acoustic resonator (FBAR) devices to offer multi-frequency function in a single chip. quasi-surface acoustic wave (QSAW) resonator microelectromechnical systems (MEMS) finite element analysis aluminum nitride Mechanical engineering and machinery Linwei Zhang verfasserin aut Shangshu Yang verfasserin aut Wenhan Jia verfasserin aut Songsong Zhang verfasserin aut Yuandong Gu verfasserin aut Liang Lou verfasserin aut Guoqiang Wu verfasserin aut In Micromachines MDPI AG, 2010 12(2021), 9, p 1118 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:12 year:2021 number:9, p 1118 https://doi.org/10.3390/mi12091118 kostenfrei https://doaj.org/article/81611945cb63499f867ec2deb5480872 kostenfrei https://www.mdpi.com/2072-666X/12/9/1118 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2021 9, p 1118
allfieldsSound	10.3390/mi12091118 doi (DE-627)DOAJ054807247 (DE-599)DOAJ81611945cb63499f867ec2deb5480872 DE-627 ger DE-627 rakwb eng TJ1-1570 Wen Chen verfasserin aut Three-Dimensional Finite Element Analysis and Characterization of Quasi-Surface Acoustic Wave Resonators 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this work, three-dimensional finite element analysis (3D FEA) of quasi-surface acoustic wave (QSAW) resonators with high accuracy is reported. The QSAW resonators consist of simple molybdenum (Mo) interdigitated transducers (IDT) on solidly mounted stacked layers of AlN/Mo/Si. Different to the SAW resonators operating in the piezoelectric substrates, the reported resonators are operating in the QSAW mode, since the IDT-excited Rayleigh waves not only propagate in the thin piezoelectric layer of AlN, but also penetrate the Si substrate. Compared with the commonly used two-dimensional (2D) FEA approach, the 3D FEA method reported in this work shows high accuracy, in terms of the resonant frequency, temperature coefficient of frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<T</mi<<mi<C</mi<<mi<F</mi<</mrow<</semantics<</math<</inline-formula<), effective coupling coefficient (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msubsup<<mi<k</mi<<mrow<<mi<e</mi<<mi<f</mi<<mi<f</mi<</mrow<<mn<2</mn<</msubsup<</semantics<</math<</inline-formula<) and frequency response. The fabricated QSAW resonator has demonstrated a <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msubsup<<mi<k</mi<<mrow<<mi<e</mi<<mi<f</mi<<mi<f</mi<</mrow<<mn<2</mn<</msubsup<</semantics<</math<</inline-formula< of 0.291%, series resonant frequency of 422.50 MHz, and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<T</mi<<mi<C</mi<<mi<F</mi<</mrow<</semantics<</math<</inline-formula< of −23.418 ppm/°C in the temperature range between 30 °C and 150 °C, for the design of wavelength at 10.4 <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mi mathvariant="sans-serif"<μ</mi<</semantics<</math<</inline-formula<m. The measurement results agree well with the simulations. Moreover, the QSAW resonators are more mechanically robust than lamb wave devices and can be integrated with silicon-based film bulk acoustic resonator (FBAR) devices to offer multi-frequency function in a single chip. quasi-surface acoustic wave (QSAW) resonator microelectromechnical systems (MEMS) finite element analysis aluminum nitride Mechanical engineering and machinery Linwei Zhang verfasserin aut Shangshu Yang verfasserin aut Wenhan Jia verfasserin aut Songsong Zhang verfasserin aut Yuandong Gu verfasserin aut Liang Lou verfasserin aut Guoqiang Wu verfasserin aut In Micromachines MDPI AG, 2010 12(2021), 9, p 1118 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:12 year:2021 number:9, p 1118 https://doi.org/10.3390/mi12091118 kostenfrei https://doaj.org/article/81611945cb63499f867ec2deb5480872 kostenfrei https://www.mdpi.com/2072-666X/12/9/1118 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2021 9, p 1118
language	English
source	In Micromachines 12(2021), 9, p 1118 volume:12 year:2021 number:9, p 1118
sourceStr	In Micromachines 12(2021), 9, p 1118 volume:12 year:2021 number:9, p 1118
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	quasi-surface acoustic wave (QSAW) resonator microelectromechnical systems (MEMS) finite element analysis aluminum nitride Mechanical engineering and machinery
isfreeaccess_bool	true
container_title	Micromachines
authorswithroles_txt_mv	Wen Chen @@aut@@ Linwei Zhang @@aut@@ Shangshu Yang @@aut@@ Wenhan Jia @@aut@@ Songsong Zhang @@aut@@ Yuandong Gu @@aut@@ Liang Lou @@aut@@ Guoqiang Wu @@aut@@
publishDateDaySort_date	2021-01-01T00:00:00Z
hierarchy_top_id	665016069
id	DOAJ054807247
language_de	englisch
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The QSAW resonators consist of simple molybdenum (Mo) interdigitated transducers (IDT) on solidly mounted stacked layers of AlN/Mo/Si. Different to the SAW resonators operating in the piezoelectric substrates, the reported resonators are operating in the QSAW mode, since the IDT-excited Rayleigh waves not only propagate in the thin piezoelectric layer of AlN, but also penetrate the Si substrate. Compared with the commonly used two-dimensional (2D) FEA approach, the 3D FEA method reported in this work shows high accuracy, in terms of the resonant frequency, temperature coefficient of frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<T</mi<<mi<C</mi<<mi<F</mi<</mrow<</semantics<</math<</inline-formula<), effective coupling coefficient (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msubsup<<mi<k</mi<<mrow<<mi<e</mi<<mi<f</mi<<mi<f</mi<</mrow<<mn<2</mn<</msubsup<</semantics<</math<</inline-formula<) and frequency response. The fabricated QSAW resonator has demonstrated a <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msubsup<<mi<k</mi<<mrow<<mi<e</mi<<mi<f</mi<<mi<f</mi<</mrow<<mn<2</mn<</msubsup<</semantics<</math<</inline-formula< of 0.291%, series resonant frequency of 422.50 MHz, and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<T</mi<<mi<C</mi<<mi<F</mi<</mrow<</semantics<</math<</inline-formula< of −23.418 ppm/°C in the temperature range between 30 °C and 150 °C, for the design of wavelength at 10.4 <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mi mathvariant="sans-serif"<μ</mi<</semantics<</math<</inline-formula<m. The measurement results agree well with the simulations. 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callnumber-first	T - Technology
author	Wen Chen
spellingShingle	Wen Chen misc TJ1-1570 misc quasi-surface acoustic wave (QSAW) resonator misc microelectromechnical systems (MEMS) misc finite element analysis misc aluminum nitride misc Mechanical engineering and machinery Three-Dimensional Finite Element Analysis and Characterization of Quasi-Surface Acoustic Wave Resonators
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topic_title	TJ1-1570 Three-Dimensional Finite Element Analysis and Characterization of Quasi-Surface Acoustic Wave Resonators quasi-surface acoustic wave (QSAW) resonator microelectromechnical systems (MEMS) finite element analysis aluminum nitride
topic	misc TJ1-1570 misc quasi-surface acoustic wave (QSAW) resonator misc microelectromechnical systems (MEMS) misc finite element analysis misc aluminum nitride misc Mechanical engineering and machinery
topic_unstemmed	misc TJ1-1570 misc quasi-surface acoustic wave (QSAW) resonator misc microelectromechnical systems (MEMS) misc finite element analysis misc aluminum nitride misc Mechanical engineering and machinery
topic_browse	misc TJ1-1570 misc quasi-surface acoustic wave (QSAW) resonator misc microelectromechnical systems (MEMS) misc finite element analysis misc aluminum nitride misc Mechanical engineering and machinery
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
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title	Three-Dimensional Finite Element Analysis and Characterization of Quasi-Surface Acoustic Wave Resonators
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title_full	Three-Dimensional Finite Element Analysis and Characterization of Quasi-Surface Acoustic Wave Resonators
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author_browse	Wen Chen Linwei Zhang Shangshu Yang Wenhan Jia Songsong Zhang Yuandong Gu Liang Lou Guoqiang Wu
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title_sort	three-dimensional finite element analysis and characterization of quasi-surface acoustic wave resonators
callnumber	TJ1-1570
title_auth	Three-Dimensional Finite Element Analysis and Characterization of Quasi-Surface Acoustic Wave Resonators
abstract	In this work, three-dimensional finite element analysis (3D FEA) of quasi-surface acoustic wave (QSAW) resonators with high accuracy is reported. The QSAW resonators consist of simple molybdenum (Mo) interdigitated transducers (IDT) on solidly mounted stacked layers of AlN/Mo/Si. Different to the SAW resonators operating in the piezoelectric substrates, the reported resonators are operating in the QSAW mode, since the IDT-excited Rayleigh waves not only propagate in the thin piezoelectric layer of AlN, but also penetrate the Si substrate. Compared with the commonly used two-dimensional (2D) FEA approach, the 3D FEA method reported in this work shows high accuracy, in terms of the resonant frequency, temperature coefficient of frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<T</mi<<mi<C</mi<<mi<F</mi<</mrow<</semantics<</math<</inline-formula<), effective coupling coefficient (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msubsup<<mi<k</mi<<mrow<<mi<e</mi<<mi<f</mi<<mi<f</mi<</mrow<<mn<2</mn<</msubsup<</semantics<</math<</inline-formula<) and frequency response. The fabricated QSAW resonator has demonstrated a <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msubsup<<mi<k</mi<<mrow<<mi<e</mi<<mi<f</mi<<mi<f</mi<</mrow<<mn<2</mn<</msubsup<</semantics<</math<</inline-formula< of 0.291%, series resonant frequency of 422.50 MHz, and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<T</mi<<mi<C</mi<<mi<F</mi<</mrow<</semantics<</math<</inline-formula< of −23.418 ppm/°C in the temperature range between 30 °C and 150 °C, for the design of wavelength at 10.4 <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mi mathvariant="sans-serif"<μ</mi<</semantics<</math<</inline-formula<m. The measurement results agree well with the simulations. Moreover, the QSAW resonators are more mechanically robust than lamb wave devices and can be integrated with silicon-based film bulk acoustic resonator (FBAR) devices to offer multi-frequency function in a single chip.
abstractGer	In this work, three-dimensional finite element analysis (3D FEA) of quasi-surface acoustic wave (QSAW) resonators with high accuracy is reported. The QSAW resonators consist of simple molybdenum (Mo) interdigitated transducers (IDT) on solidly mounted stacked layers of AlN/Mo/Si. Different to the SAW resonators operating in the piezoelectric substrates, the reported resonators are operating in the QSAW mode, since the IDT-excited Rayleigh waves not only propagate in the thin piezoelectric layer of AlN, but also penetrate the Si substrate. Compared with the commonly used two-dimensional (2D) FEA approach, the 3D FEA method reported in this work shows high accuracy, in terms of the resonant frequency, temperature coefficient of frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<T</mi<<mi<C</mi<<mi<F</mi<</mrow<</semantics<</math<</inline-formula<), effective coupling coefficient (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msubsup<<mi<k</mi<<mrow<<mi<e</mi<<mi<f</mi<<mi<f</mi<</mrow<<mn<2</mn<</msubsup<</semantics<</math<</inline-formula<) and frequency response. The fabricated QSAW resonator has demonstrated a <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msubsup<<mi<k</mi<<mrow<<mi<e</mi<<mi<f</mi<<mi<f</mi<</mrow<<mn<2</mn<</msubsup<</semantics<</math<</inline-formula< of 0.291%, series resonant frequency of 422.50 MHz, and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<T</mi<<mi<C</mi<<mi<F</mi<</mrow<</semantics<</math<</inline-formula< of −23.418 ppm/°C in the temperature range between 30 °C and 150 °C, for the design of wavelength at 10.4 <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mi mathvariant="sans-serif"<μ</mi<</semantics<</math<</inline-formula<m. The measurement results agree well with the simulations. Moreover, the QSAW resonators are more mechanically robust than lamb wave devices and can be integrated with silicon-based film bulk acoustic resonator (FBAR) devices to offer multi-frequency function in a single chip.
abstract_unstemmed	In this work, three-dimensional finite element analysis (3D FEA) of quasi-surface acoustic wave (QSAW) resonators with high accuracy is reported. The QSAW resonators consist of simple molybdenum (Mo) interdigitated transducers (IDT) on solidly mounted stacked layers of AlN/Mo/Si. Different to the SAW resonators operating in the piezoelectric substrates, the reported resonators are operating in the QSAW mode, since the IDT-excited Rayleigh waves not only propagate in the thin piezoelectric layer of AlN, but also penetrate the Si substrate. Compared with the commonly used two-dimensional (2D) FEA approach, the 3D FEA method reported in this work shows high accuracy, in terms of the resonant frequency, temperature coefficient of frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<T</mi<<mi<C</mi<<mi<F</mi<</mrow<</semantics<</math<</inline-formula<), effective coupling coefficient (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msubsup<<mi<k</mi<<mrow<<mi<e</mi<<mi<f</mi<<mi<f</mi<</mrow<<mn<2</mn<</msubsup<</semantics<</math<</inline-formula<) and frequency response. The fabricated QSAW resonator has demonstrated a <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msubsup<<mi<k</mi<<mrow<<mi<e</mi<<mi<f</mi<<mi<f</mi<</mrow<<mn<2</mn<</msubsup<</semantics<</math<</inline-formula< of 0.291%, series resonant frequency of 422.50 MHz, and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<T</mi<<mi<C</mi<<mi<F</mi<</mrow<</semantics<</math<</inline-formula< of −23.418 ppm/°C in the temperature range between 30 °C and 150 °C, for the design of wavelength at 10.4 <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mi mathvariant="sans-serif"<μ</mi<</semantics<</math<</inline-formula<m. The measurement results agree well with the simulations. Moreover, the QSAW resonators are more mechanically robust than lamb wave devices and can be integrated with silicon-based film bulk acoustic resonator (FBAR) devices to offer multi-frequency function in a single chip.
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container_issue	9, p 1118
title_short	Three-Dimensional Finite Element Analysis and Characterization of Quasi-Surface Acoustic Wave Resonators
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Three-Dimensional Finite Element Analysis and Characterization of Quasi-Surface Acoustic Wave Resonators

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