Modulation of Q Factor and Fano Lineshape in Ge<sub<2</sub<Sb<sub<2</sub<Te<sub<5</sub<-Based Grating Structure

In this paper, the modulation of the Fano resonance (FR) of dielectric grating has been demonstrated by controlling the crystallization fraction of phase change material film. We analyze the optical characteristics of the grating structure thoroughly by the energy band structure, Q factor, and the e...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Qing Liu [verfasserIn] Danyang Yao [verfasserIn] Yan Liu [verfasserIn] Xinyi Liu [verfasserIn] Yong Zhang [verfasserIn] Genquan Han [verfasserIn] Yue Hao [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2021

Schlagwörter:	Fano resonance Ge_2Sb_2Te_5 Q factor fano lineshape

Übergeordnetes Werk:	In: IEEE Photonics Journal - IEEE, 2015, 13(2021), 6, Seite 7
Übergeordnetes Werk:	volume:13 ; year:2021 ; number:6 ; pages:7

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.1109/JPHOT.2021.3119178

Katalog-ID:	DOAJ054865344

Internformat


LEADER	01000caa a22002652 4500
001	DOAJ054865344
003	DE-627
005	20230308184546.0
007	cr uuu---uuuuu
008	230227s2021 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.1109/JPHOT.2021.3119178 \|2 doi
035			\|a (DE-627)DOAJ054865344
035			\|a (DE-599)DOAJfdc4b8eebbae4290847e3de95d95ba7b
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
050		0	\|a TA1501-1820
050		0	\|a QC350-467
100	0		\|a Qing Liu \|e verfasserin \|4 aut
245	1	0	\|a Modulation of Q Factor and Fano Lineshape in Ge<sub<2</sub<Sb<sub<2</sub<Te<sub<5</sub<-Based Grating Structure
264		1	\|c 2021
336			\|a Text \|b txt \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
520			\|a In this paper, the modulation of the Fano resonance (FR) of dielectric grating has been demonstrated by controlling the crystallization fraction of phase change material film. We analyze the optical characteristics of the grating structure thoroughly by the energy band structure, Q factor, and the electric field distribution of three TE modes. It is verified that the Q factor and the Fano lineshape are related to the thickness of the Ge<sub<2</sub<Sb<sub<2</sub<Te<sub<5</sub< (GST) layer. In addition, by changing the crystallization fraction of the GST layer, non-volatile modulation of the Q factor can be achieved. We also demonstrate that the crystallization fraction of the GST layer affects the Fano lineshape significantly. By changing the crystallization fraction of the GST layer, the non-volatile modulation of Fano lineshape from asymmetric parameter <italic<q</italic< = −1 to <italic<q</italic< = 1 can be achieved. These features make this grating structure an excellent optically reconfigurable device in various fields including lasing spaser and biosensing with improved performance.
650		4	\|a Fano resonance
650		4	\|a Ge_2Sb_2Te_5
650		4	\|a Q factor
650		4	\|a fano lineshape
653		0	\|a Applied optics. Photonics
653		0	\|a Optics. Light
700	0		\|a Danyang Yao \|e verfasserin \|4 aut
700	0		\|a Yan Liu \|e verfasserin \|4 aut
700	0		\|a Xinyi Liu \|e verfasserin \|4 aut
700	0		\|a Yong Zhang \|e verfasserin \|4 aut
700	0		\|a Genquan Han \|e verfasserin \|4 aut
700	0		\|a Yue Hao \|e verfasserin \|4 aut
773	0	8	\|i In \|t IEEE Photonics Journal \|d IEEE, 2015 \|g 13(2021), 6, Seite 7 \|w (DE-627)600310272 \|w (DE-600)2495610-7 \|x 19430655 \|7 nnns
773	1	8	\|g volume:13 \|g year:2021 \|g number:6 \|g pages:7
856	4	0	\|u https://doi.org/10.1109/JPHOT.2021.3119178 \|z kostenfrei
856	4	0	\|u https://doaj.org/article/fdc4b8eebbae4290847e3de95d95ba7b \|z kostenfrei
856	4	0	\|u https://ieeexplore.ieee.org/document/9566828/ \|z kostenfrei
856	4	2	\|u https://doaj.org/toc/1943-0655 \|y Journal toc \|z kostenfrei
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_DOAJ
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_39
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_95
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_151
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_213
912			\|a GBV_ILN_230
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_4012
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4367
912			\|a GBV_ILN_4700
951			\|a AR
952			\|d 13 \|j 2021 \|e 6 \|h 7

Indexfelder

author_variant	q l ql d y dy y l yl x l xl y z yz g h gh y h yh
matchkey_str	article:19430655:2021----::ouainffcoadaoiehpigsbsbbu2utsbs
hierarchy_sort_str	2021
callnumber-subject-code	TA
publishDate	2021
allfields	10.1109/JPHOT.2021.3119178 doi (DE-627)DOAJ054865344 (DE-599)DOAJfdc4b8eebbae4290847e3de95d95ba7b DE-627 ger DE-627 rakwb eng TA1501-1820 QC350-467 Qing Liu verfasserin aut Modulation of Q Factor and Fano Lineshape in Ge<sub<2</sub<Sb<sub<2</sub<Te<sub<5</sub<-Based Grating Structure 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, the modulation of the Fano resonance (FR) of dielectric grating has been demonstrated by controlling the crystallization fraction of phase change material film. We analyze the optical characteristics of the grating structure thoroughly by the energy band structure, Q factor, and the electric field distribution of three TE modes. It is verified that the Q factor and the Fano lineshape are related to the thickness of the Ge<sub<2</sub<Sb<sub<2</sub<Te<sub<5</sub< (GST) layer. In addition, by changing the crystallization fraction of the GST layer, non-volatile modulation of the Q factor can be achieved. We also demonstrate that the crystallization fraction of the GST layer affects the Fano lineshape significantly. By changing the crystallization fraction of the GST layer, the non-volatile modulation of Fano lineshape from asymmetric parameter <italic<q</italic< = −1 to <italic<q</italic< = 1 can be achieved. These features make this grating structure an excellent optically reconfigurable device in various fields including lasing spaser and biosensing with improved performance. Fano resonance Ge_2Sb_2Te_5 Q factor fano lineshape Applied optics. Photonics Optics. Light Danyang Yao verfasserin aut Yan Liu verfasserin aut Xinyi Liu verfasserin aut Yong Zhang verfasserin aut Genquan Han verfasserin aut Yue Hao verfasserin aut In IEEE Photonics Journal IEEE, 2015 13(2021), 6, Seite 7 (DE-627)600310272 (DE-600)2495610-7 19430655 nnns volume:13 year:2021 number:6 pages:7 https://doi.org/10.1109/JPHOT.2021.3119178 kostenfrei https://doaj.org/article/fdc4b8eebbae4290847e3de95d95ba7b kostenfrei https://ieeexplore.ieee.org/document/9566828/ kostenfrei https://doaj.org/toc/1943-0655 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2003 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2021 6 7
spelling	10.1109/JPHOT.2021.3119178 doi (DE-627)DOAJ054865344 (DE-599)DOAJfdc4b8eebbae4290847e3de95d95ba7b DE-627 ger DE-627 rakwb eng TA1501-1820 QC350-467 Qing Liu verfasserin aut Modulation of Q Factor and Fano Lineshape in Ge<sub<2</sub<Sb<sub<2</sub<Te<sub<5</sub<-Based Grating Structure 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, the modulation of the Fano resonance (FR) of dielectric grating has been demonstrated by controlling the crystallization fraction of phase change material film. We analyze the optical characteristics of the grating structure thoroughly by the energy band structure, Q factor, and the electric field distribution of three TE modes. It is verified that the Q factor and the Fano lineshape are related to the thickness of the Ge<sub<2</sub<Sb<sub<2</sub<Te<sub<5</sub< (GST) layer. In addition, by changing the crystallization fraction of the GST layer, non-volatile modulation of the Q factor can be achieved. We also demonstrate that the crystallization fraction of the GST layer affects the Fano lineshape significantly. By changing the crystallization fraction of the GST layer, the non-volatile modulation of Fano lineshape from asymmetric parameter <italic<q</italic< = −1 to <italic<q</italic< = 1 can be achieved. These features make this grating structure an excellent optically reconfigurable device in various fields including lasing spaser and biosensing with improved performance. Fano resonance Ge_2Sb_2Te_5 Q factor fano lineshape Applied optics. Photonics Optics. Light Danyang Yao verfasserin aut Yan Liu verfasserin aut Xinyi Liu verfasserin aut Yong Zhang verfasserin aut Genquan Han verfasserin aut Yue Hao verfasserin aut In IEEE Photonics Journal IEEE, 2015 13(2021), 6, Seite 7 (DE-627)600310272 (DE-600)2495610-7 19430655 nnns volume:13 year:2021 number:6 pages:7 https://doi.org/10.1109/JPHOT.2021.3119178 kostenfrei https://doaj.org/article/fdc4b8eebbae4290847e3de95d95ba7b kostenfrei https://ieeexplore.ieee.org/document/9566828/ kostenfrei https://doaj.org/toc/1943-0655 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2003 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2021 6 7
allfields_unstemmed	10.1109/JPHOT.2021.3119178 doi (DE-627)DOAJ054865344 (DE-599)DOAJfdc4b8eebbae4290847e3de95d95ba7b DE-627 ger DE-627 rakwb eng TA1501-1820 QC350-467 Qing Liu verfasserin aut Modulation of Q Factor and Fano Lineshape in Ge<sub<2</sub<Sb<sub<2</sub<Te<sub<5</sub<-Based Grating Structure 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, the modulation of the Fano resonance (FR) of dielectric grating has been demonstrated by controlling the crystallization fraction of phase change material film. We analyze the optical characteristics of the grating structure thoroughly by the energy band structure, Q factor, and the electric field distribution of three TE modes. It is verified that the Q factor and the Fano lineshape are related to the thickness of the Ge<sub<2</sub<Sb<sub<2</sub<Te<sub<5</sub< (GST) layer. In addition, by changing the crystallization fraction of the GST layer, non-volatile modulation of the Q factor can be achieved. We also demonstrate that the crystallization fraction of the GST layer affects the Fano lineshape significantly. By changing the crystallization fraction of the GST layer, the non-volatile modulation of Fano lineshape from asymmetric parameter <italic<q</italic< = −1 to <italic<q</italic< = 1 can be achieved. These features make this grating structure an excellent optically reconfigurable device in various fields including lasing spaser and biosensing with improved performance. Fano resonance Ge_2Sb_2Te_5 Q factor fano lineshape Applied optics. Photonics Optics. Light Danyang Yao verfasserin aut Yan Liu verfasserin aut Xinyi Liu verfasserin aut Yong Zhang verfasserin aut Genquan Han verfasserin aut Yue Hao verfasserin aut In IEEE Photonics Journal IEEE, 2015 13(2021), 6, Seite 7 (DE-627)600310272 (DE-600)2495610-7 19430655 nnns volume:13 year:2021 number:6 pages:7 https://doi.org/10.1109/JPHOT.2021.3119178 kostenfrei https://doaj.org/article/fdc4b8eebbae4290847e3de95d95ba7b kostenfrei https://ieeexplore.ieee.org/document/9566828/ kostenfrei https://doaj.org/toc/1943-0655 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2003 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2021 6 7
allfieldsGer	10.1109/JPHOT.2021.3119178 doi (DE-627)DOAJ054865344 (DE-599)DOAJfdc4b8eebbae4290847e3de95d95ba7b DE-627 ger DE-627 rakwb eng TA1501-1820 QC350-467 Qing Liu verfasserin aut Modulation of Q Factor and Fano Lineshape in Ge<sub<2</sub<Sb<sub<2</sub<Te<sub<5</sub<-Based Grating Structure 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, the modulation of the Fano resonance (FR) of dielectric grating has been demonstrated by controlling the crystallization fraction of phase change material film. We analyze the optical characteristics of the grating structure thoroughly by the energy band structure, Q factor, and the electric field distribution of three TE modes. It is verified that the Q factor and the Fano lineshape are related to the thickness of the Ge<sub<2</sub<Sb<sub<2</sub<Te<sub<5</sub< (GST) layer. In addition, by changing the crystallization fraction of the GST layer, non-volatile modulation of the Q factor can be achieved. We also demonstrate that the crystallization fraction of the GST layer affects the Fano lineshape significantly. By changing the crystallization fraction of the GST layer, the non-volatile modulation of Fano lineshape from asymmetric parameter <italic<q</italic< = −1 to <italic<q</italic< = 1 can be achieved. These features make this grating structure an excellent optically reconfigurable device in various fields including lasing spaser and biosensing with improved performance. Fano resonance Ge_2Sb_2Te_5 Q factor fano lineshape Applied optics. Photonics Optics. Light Danyang Yao verfasserin aut Yan Liu verfasserin aut Xinyi Liu verfasserin aut Yong Zhang verfasserin aut Genquan Han verfasserin aut Yue Hao verfasserin aut In IEEE Photonics Journal IEEE, 2015 13(2021), 6, Seite 7 (DE-627)600310272 (DE-600)2495610-7 19430655 nnns volume:13 year:2021 number:6 pages:7 https://doi.org/10.1109/JPHOT.2021.3119178 kostenfrei https://doaj.org/article/fdc4b8eebbae4290847e3de95d95ba7b kostenfrei https://ieeexplore.ieee.org/document/9566828/ kostenfrei https://doaj.org/toc/1943-0655 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2003 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2021 6 7
allfieldsSound	10.1109/JPHOT.2021.3119178 doi (DE-627)DOAJ054865344 (DE-599)DOAJfdc4b8eebbae4290847e3de95d95ba7b DE-627 ger DE-627 rakwb eng TA1501-1820 QC350-467 Qing Liu verfasserin aut Modulation of Q Factor and Fano Lineshape in Ge<sub<2</sub<Sb<sub<2</sub<Te<sub<5</sub<-Based Grating Structure 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, the modulation of the Fano resonance (FR) of dielectric grating has been demonstrated by controlling the crystallization fraction of phase change material film. We analyze the optical characteristics of the grating structure thoroughly by the energy band structure, Q factor, and the electric field distribution of three TE modes. It is verified that the Q factor and the Fano lineshape are related to the thickness of the Ge<sub<2</sub<Sb<sub<2</sub<Te<sub<5</sub< (GST) layer. In addition, by changing the crystallization fraction of the GST layer, non-volatile modulation of the Q factor can be achieved. We also demonstrate that the crystallization fraction of the GST layer affects the Fano lineshape significantly. By changing the crystallization fraction of the GST layer, the non-volatile modulation of Fano lineshape from asymmetric parameter <italic<q</italic< = −1 to <italic<q</italic< = 1 can be achieved. These features make this grating structure an excellent optically reconfigurable device in various fields including lasing spaser and biosensing with improved performance. Fano resonance Ge_2Sb_2Te_5 Q factor fano lineshape Applied optics. Photonics Optics. Light Danyang Yao verfasserin aut Yan Liu verfasserin aut Xinyi Liu verfasserin aut Yong Zhang verfasserin aut Genquan Han verfasserin aut Yue Hao verfasserin aut In IEEE Photonics Journal IEEE, 2015 13(2021), 6, Seite 7 (DE-627)600310272 (DE-600)2495610-7 19430655 nnns volume:13 year:2021 number:6 pages:7 https://doi.org/10.1109/JPHOT.2021.3119178 kostenfrei https://doaj.org/article/fdc4b8eebbae4290847e3de95d95ba7b kostenfrei https://ieeexplore.ieee.org/document/9566828/ kostenfrei https://doaj.org/toc/1943-0655 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2003 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2021 6 7
language	English
source	In IEEE Photonics Journal 13(2021), 6, Seite 7 volume:13 year:2021 number:6 pages:7
sourceStr	In IEEE Photonics Journal 13(2021), 6, Seite 7 volume:13 year:2021 number:6 pages:7
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Fano resonance Ge_2Sb_2Te_5 Q factor fano lineshape Applied optics. Photonics Optics. Light
isfreeaccess_bool	true
container_title	IEEE Photonics Journal
authorswithroles_txt_mv	Qing Liu @@aut@@ Danyang Yao @@aut@@ Yan Liu @@aut@@ Xinyi Liu @@aut@@ Yong Zhang @@aut@@ Genquan Han @@aut@@ Yue Hao @@aut@@
publishDateDaySort_date	2021-01-01T00:00:00Z
hierarchy_top_id	600310272
id	DOAJ054865344
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ054865344</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230308184546.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230227s2021 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1109/JPHOT.2021.3119178</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ054865344</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJfdc4b8eebbae4290847e3de95d95ba7b</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TA1501-1820</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QC350-467</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Qing Liu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Modulation of Q Factor and Fano Lineshape in Ge<sub<2</sub<Sb<sub<2</sub<Te<sub<5</sub<-Based Grating Structure</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2021</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">In this paper, the modulation of the Fano resonance (FR) of dielectric grating has been demonstrated by controlling the crystallization fraction of phase change material film. We analyze the optical characteristics of the grating structure thoroughly by the energy band structure, Q factor, and the electric field distribution of three TE modes. It is verified that the Q factor and the Fano lineshape are related to the thickness of the Ge<sub<2</sub<Sb<sub<2</sub<Te<sub<5</sub< (GST) layer. In addition, by changing the crystallization fraction of the GST layer, non-volatile modulation of the Q factor can be achieved. We also demonstrate that the crystallization fraction of the GST layer affects the Fano lineshape significantly. By changing the crystallization fraction of the GST layer, the non-volatile modulation of Fano lineshape from asymmetric parameter <italic<q</italic< = −1 to <italic<q</italic< = 1 can be achieved. These features make this grating structure an excellent optically reconfigurable device in various fields including lasing spaser and biosensing with improved performance.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Fano resonance</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ge_2Sb_2Te_5</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Q factor</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">fano lineshape</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Applied optics. Photonics</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Optics. Light</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Danyang Yao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Yan Liu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Xinyi Liu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Yong Zhang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Genquan Han</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Yue Hao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">IEEE Photonics Journal</subfield><subfield code="d">IEEE, 2015</subfield><subfield code="g">13(2021), 6, Seite 7</subfield><subfield code="w">(DE-627)600310272</subfield><subfield code="w">(DE-600)2495610-7</subfield><subfield code="x">19430655</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:13</subfield><subfield code="g">year:2021</subfield><subfield code="g">number:6</subfield><subfield code="g">pages:7</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1109/JPHOT.2021.3119178</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/fdc4b8eebbae4290847e3de95d95ba7b</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://ieeexplore.ieee.org/document/9566828/</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/1943-0655</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">13</subfield><subfield code="j">2021</subfield><subfield code="e">6</subfield><subfield code="h">7</subfield></datafield></record></collection>
callnumber-first	T - Technology
author	Qing Liu
spellingShingle	Qing Liu misc TA1501-1820 misc QC350-467 misc Fano resonance misc Ge_2Sb_2Te_5 misc Q factor misc fano lineshape misc Applied optics. Photonics misc Optics. Light Modulation of Q Factor and Fano Lineshape in Ge<sub<2</sub<Sb<sub<2</sub<Te<sub<5</sub<-Based Grating Structure
authorStr	Qing Liu
ppnlink_with_tag_str_mv	@@773@@(DE-627)600310272
format	electronic Article
delete_txt_mv	keep
author_role	aut aut aut aut aut aut aut
collection	DOAJ
remote_str	true
callnumber-label	TA1501-1820
illustrated	Not Illustrated
issn	19430655
topic_title	TA1501-1820 QC350-467 Modulation of Q Factor and Fano Lineshape in Ge<sub<2</sub<Sb<sub<2</sub<Te<sub<5</sub<-Based Grating Structure Fano resonance Ge_2Sb_2Te_5 Q factor fano lineshape
topic	misc TA1501-1820 misc QC350-467 misc Fano resonance misc Ge_2Sb_2Te_5 misc Q factor misc fano lineshape misc Applied optics. Photonics misc Optics. Light
topic_unstemmed	misc TA1501-1820 misc QC350-467 misc Fano resonance misc Ge_2Sb_2Te_5 misc Q factor misc fano lineshape misc Applied optics. Photonics misc Optics. Light
topic_browse	misc TA1501-1820 misc QC350-467 misc Fano resonance misc Ge_2Sb_2Te_5 misc Q factor misc fano lineshape misc Applied optics. Photonics misc Optics. Light
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	cr
hierarchy_parent_title	IEEE Photonics Journal
hierarchy_parent_id	600310272
hierarchy_top_title	IEEE Photonics Journal
isfreeaccess_txt	true
familylinks_str_mv	(DE-627)600310272 (DE-600)2495610-7
title	Modulation of Q Factor and Fano Lineshape in Ge<sub<2</sub<Sb<sub<2</sub<Te<sub<5</sub<-Based Grating Structure
ctrlnum	(DE-627)DOAJ054865344 (DE-599)DOAJfdc4b8eebbae4290847e3de95d95ba7b
title_full	Modulation of Q Factor and Fano Lineshape in Ge<sub<2</sub<Sb<sub<2</sub<Te<sub<5</sub<-Based Grating Structure
author_sort	Qing Liu
journal	IEEE Photonics Journal
journalStr	IEEE Photonics Journal
callnumber-first-code	T
lang_code	eng
isOA_bool	true
recordtype	marc
publishDateSort	2021
contenttype_str_mv	txt
container_start_page	7
author_browse	Qing Liu Danyang Yao Yan Liu Xinyi Liu Yong Zhang Genquan Han Yue Hao
container_volume	13
class	TA1501-1820 QC350-467
format_se	Elektronische Aufsätze
author-letter	Qing Liu
doi_str_mv	10.1109/JPHOT.2021.3119178
author2-role	verfasserin
title_sort	modulation of q factor and fano lineshape in ge<sub<2</sub<sb<sub<2</sub<te<sub<5</sub<-based grating structure
callnumber	TA1501-1820
title_auth	Modulation of Q Factor and Fano Lineshape in Ge<sub<2</sub<Sb<sub<2</sub<Te<sub<5</sub<-Based Grating Structure
abstract	In this paper, the modulation of the Fano resonance (FR) of dielectric grating has been demonstrated by controlling the crystallization fraction of phase change material film. We analyze the optical characteristics of the grating structure thoroughly by the energy band structure, Q factor, and the electric field distribution of three TE modes. It is verified that the Q factor and the Fano lineshape are related to the thickness of the Ge<sub<2</sub<Sb<sub<2</sub<Te<sub<5</sub< (GST) layer. In addition, by changing the crystallization fraction of the GST layer, non-volatile modulation of the Q factor can be achieved. We also demonstrate that the crystallization fraction of the GST layer affects the Fano lineshape significantly. By changing the crystallization fraction of the GST layer, the non-volatile modulation of Fano lineshape from asymmetric parameter <italic<q</italic< = −1 to <italic<q</italic< = 1 can be achieved. These features make this grating structure an excellent optically reconfigurable device in various fields including lasing spaser and biosensing with improved performance.
abstractGer	In this paper, the modulation of the Fano resonance (FR) of dielectric grating has been demonstrated by controlling the crystallization fraction of phase change material film. We analyze the optical characteristics of the grating structure thoroughly by the energy band structure, Q factor, and the electric field distribution of three TE modes. It is verified that the Q factor and the Fano lineshape are related to the thickness of the Ge<sub<2</sub<Sb<sub<2</sub<Te<sub<5</sub< (GST) layer. In addition, by changing the crystallization fraction of the GST layer, non-volatile modulation of the Q factor can be achieved. We also demonstrate that the crystallization fraction of the GST layer affects the Fano lineshape significantly. By changing the crystallization fraction of the GST layer, the non-volatile modulation of Fano lineshape from asymmetric parameter <italic<q</italic< = −1 to <italic<q</italic< = 1 can be achieved. These features make this grating structure an excellent optically reconfigurable device in various fields including lasing spaser and biosensing with improved performance.
abstract_unstemmed	In this paper, the modulation of the Fano resonance (FR) of dielectric grating has been demonstrated by controlling the crystallization fraction of phase change material film. We analyze the optical characteristics of the grating structure thoroughly by the energy band structure, Q factor, and the electric field distribution of three TE modes. It is verified that the Q factor and the Fano lineshape are related to the thickness of the Ge<sub<2</sub<Sb<sub<2</sub<Te<sub<5</sub< (GST) layer. In addition, by changing the crystallization fraction of the GST layer, non-volatile modulation of the Q factor can be achieved. We also demonstrate that the crystallization fraction of the GST layer affects the Fano lineshape significantly. By changing the crystallization fraction of the GST layer, the non-volatile modulation of Fano lineshape from asymmetric parameter <italic<q</italic< = −1 to <italic<q</italic< = 1 can be achieved. These features make this grating structure an excellent optically reconfigurable device in various fields including lasing spaser and biosensing with improved performance.
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2003 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700
container_issue	6
title_short	Modulation of Q Factor and Fano Lineshape in Ge<sub<2</sub<Sb<sub<2</sub<Te<sub<5</sub<-Based Grating Structure
url	https://doi.org/10.1109/JPHOT.2021.3119178 https://doaj.org/article/fdc4b8eebbae4290847e3de95d95ba7b https://ieeexplore.ieee.org/document/9566828/ https://doaj.org/toc/1943-0655
remote_bool	true
author2	Danyang Yao Yan Liu Xinyi Liu Yong Zhang Genquan Han Yue Hao
author2Str	Danyang Yao Yan Liu Xinyi Liu Yong Zhang Genquan Han Yue Hao
ppnlink	600310272
callnumber-subject	TA - General and Civil Engineering
mediatype_str_mv	c
isOA_txt	true
hochschulschrift_bool	false
doi_str	10.1109/JPHOT.2021.3119178
callnumber-a	TA1501-1820
up_date	2024-07-04T00:54:43.471Z
_version_	1803607850063233024
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ054865344</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230308184546.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230227s2021 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1109/JPHOT.2021.3119178</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ054865344</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJfdc4b8eebbae4290847e3de95d95ba7b</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TA1501-1820</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QC350-467</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Qing Liu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Modulation of Q Factor and Fano Lineshape in Ge<sub<2</sub<Sb<sub<2</sub<Te<sub<5</sub<-Based Grating Structure</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2021</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">In this paper, the modulation of the Fano resonance (FR) of dielectric grating has been demonstrated by controlling the crystallization fraction of phase change material film. We analyze the optical characteristics of the grating structure thoroughly by the energy band structure, Q factor, and the electric field distribution of three TE modes. It is verified that the Q factor and the Fano lineshape are related to the thickness of the Ge<sub<2</sub<Sb<sub<2</sub<Te<sub<5</sub< (GST) layer. In addition, by changing the crystallization fraction of the GST layer, non-volatile modulation of the Q factor can be achieved. We also demonstrate that the crystallization fraction of the GST layer affects the Fano lineshape significantly. By changing the crystallization fraction of the GST layer, the non-volatile modulation of Fano lineshape from asymmetric parameter <italic<q</italic< = −1 to <italic<q</italic< = 1 can be achieved. These features make this grating structure an excellent optically reconfigurable device in various fields including lasing spaser and biosensing with improved performance.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Fano resonance</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ge_2Sb_2Te_5</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Q factor</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">fano lineshape</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Applied optics. Photonics</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Optics. Light</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Danyang Yao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Yan Liu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Xinyi Liu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Yong Zhang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Genquan Han</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Yue Hao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">IEEE Photonics Journal</subfield><subfield code="d">IEEE, 2015</subfield><subfield code="g">13(2021), 6, Seite 7</subfield><subfield code="w">(DE-627)600310272</subfield><subfield code="w">(DE-600)2495610-7</subfield><subfield code="x">19430655</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:13</subfield><subfield code="g">year:2021</subfield><subfield code="g">number:6</subfield><subfield code="g">pages:7</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1109/JPHOT.2021.3119178</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/fdc4b8eebbae4290847e3de95d95ba7b</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://ieeexplore.ieee.org/document/9566828/</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/1943-0655</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">13</subfield><subfield code="j">2021</subfield><subfield code="e">6</subfield><subfield code="h">7</subfield></datafield></record></collection>
score	7.401737

Nicht das Richtige dabei?

Schreiben Sie uns!

Modulation of Q Factor and Fano Lineshape in Ge<sub<2</sub<Sb<sub<2</sub<Te<sub<5</sub<-Based Grating Structure

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?