Improvement of the Bias Stress Stability in 2D MoS<sub<2</sub< and WS<sub<2</sub< Transistors with a TiO<sub<2</sub< Interfacial Layer

The fermi-level pinning phenomenon, which occurs at the metal−semiconductor interface, not only obstructs the achievement of high-performance field effect transistors (FETs) but also results in poor long-term stability. This paper reports on the improvement in gate-bias stress stability in two-dimen...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Woojin Park [verfasserIn] Yusin Pak [verfasserIn] Hye Yeon Jang [verfasserIn] Jae Hyeon Nam [verfasserIn] Tae Hyeon Kim [verfasserIn] Seyoung Oh [verfasserIn] Sung Mook Choi [verfasserIn] Yonghun Kim [verfasserIn] Byungjin Cho [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2019

Schlagwörter:	MoS WS interfacial layer contact resistance bias stress stability

Übergeordnetes Werk:	In: Nanomaterials - MDPI AG, 2012, 9(2019), 8, p 1155
Übergeordnetes Werk:	volume:9 ; year:2019 ; number:8, p 1155

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/nano9081155

Katalog-ID:	DOAJ056169094

Internformat


LEADER	01000caa a22002652 4500
001	DOAJ056169094
003	DE-627
005	20230308195657.0
007	cr uuu---uuuuu
008	230227s2019 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.3390/nano9081155 \|2 doi
035			\|a (DE-627)DOAJ056169094
035			\|a (DE-599)DOAJa128063efd5145a09903c3de26755dbd
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
050		0	\|a QD1-999
100	0		\|a Woojin Park \|e verfasserin \|4 aut
245	1	0	\|a Improvement of the Bias Stress Stability in 2D MoS<sub<2</sub< and WS<sub<2</sub< Transistors with a TiO<sub<2</sub< Interfacial Layer
264		1	\|c 2019
336			\|a Text \|b txt \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
520			\|a The fermi-level pinning phenomenon, which occurs at the metal−semiconductor interface, not only obstructs the achievement of high-performance field effect transistors (FETs) but also results in poor long-term stability. This paper reports on the improvement in gate-bias stress stability in two-dimensional (2D) transition metal dichalcogenide (TMD) FETs with a titanium dioxide (TiO<sub<2</sub<) interfacial layer inserted between the 2D TMDs (MoS<sub<2</sub< or WS<sub<2</sub<) and metal electrodes. Compared to the control MoS<sub<2</sub<, the device without the TiO<sub<2</sub< layer, the TiO<sub<2</sub< interfacial layer deposited on 2D TMDs could lead to more effective carrier modulation by simply changing the contact metal, thereby improving the performance of the Schottky-barrier-modulated FET device. The TiO<sub<2</sub< layer could also suppress the Fermi-level pinning phenomenon usually fixed to the metal−semiconductor interface, resulting in an improvement in transistor performance. Especially, the introduction of the TiO<sub<2</sub< layer contributed to achieving stable device performance. Threshold voltage variation of MoS<sub<2</sub< and WS<sub<2</sub< FETs with the TiO<sub<2</sub< interfacial layer was ~2 V and ~3.6 V, respectively. The theoretical result of the density function theory validated that mid-gap energy states created within the bandgap of 2D MoS<sub<2</sub< can cause a doping effect. The simple approach of introducing a thin interfacial oxide layer offers a promising way toward the implementation of high-performance 2D TMD-based logic circuits.
650		4	\|a MoS<sub<2</sub<
650		4	\|a WS<sub<2</sub<
650		4	\|a interfacial layer
650		4	\|a contact resistance
650		4	\|a bias stress stability
653		0	\|a Chemistry
700	0		\|a Yusin Pak \|e verfasserin \|4 aut
700	0		\|a Hye Yeon Jang \|e verfasserin \|4 aut
700	0		\|a Jae Hyeon Nam \|e verfasserin \|4 aut
700	0		\|a Tae Hyeon Kim \|e verfasserin \|4 aut
700	0		\|a Seyoung Oh \|e verfasserin \|4 aut
700	0		\|a Sung Mook Choi \|e verfasserin \|4 aut
700	0		\|a Yonghun Kim \|e verfasserin \|4 aut
700	0		\|a Byungjin Cho \|e verfasserin \|4 aut
773	0	8	\|i In \|t Nanomaterials \|d MDPI AG, 2012 \|g 9(2019), 8, p 1155 \|w (DE-627)718627199 \|w (DE-600)2662255-5 \|x 20794991 \|7 nnns
773	1	8	\|g volume:9 \|g year:2019 \|g number:8, p 1155
856	4	0	\|u https://doi.org/10.3390/nano9081155 \|z kostenfrei
856	4	0	\|u https://doaj.org/article/a128063efd5145a09903c3de26755dbd \|z kostenfrei
856	4	0	\|u https://www.mdpi.com/2079-4991/9/8/1155 \|z kostenfrei
856	4	2	\|u https://doaj.org/toc/2079-4991 \|y Journal toc \|z kostenfrei
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_DOAJ
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_39
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_74
912			\|a GBV_ILN_95
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_151
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_213
912			\|a GBV_ILN_230
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_602
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2108
912			\|a GBV_ILN_2119
912			\|a GBV_ILN_4012
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4367
912			\|a GBV_ILN_4700
951			\|a AR
952			\|d 9 \|j 2019 \|e 8, p 1155

Indexfelder

author_variant	w p wp y p yp h y j hyj j h n jhn t h k thk s o so s m c smc y k yk b c bc
matchkey_str	article:20794991:2019----::mrvmnoteistestblti2msu2uadsu2utassosi
hierarchy_sort_str	2019
callnumber-subject-code	QD
publishDate	2019
allfields	10.3390/nano9081155 doi (DE-627)DOAJ056169094 (DE-599)DOAJa128063efd5145a09903c3de26755dbd DE-627 ger DE-627 rakwb eng QD1-999 Woojin Park verfasserin aut Improvement of the Bias Stress Stability in 2D MoS<sub<2</sub< and WS<sub<2</sub< Transistors with a TiO<sub<2</sub< Interfacial Layer 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The fermi-level pinning phenomenon, which occurs at the metal−semiconductor interface, not only obstructs the achievement of high-performance field effect transistors (FETs) but also results in poor long-term stability. This paper reports on the improvement in gate-bias stress stability in two-dimensional (2D) transition metal dichalcogenide (TMD) FETs with a titanium dioxide (TiO<sub<2</sub<) interfacial layer inserted between the 2D TMDs (MoS<sub<2</sub< or WS<sub<2</sub<) and metal electrodes. Compared to the control MoS<sub<2</sub<, the device without the TiO<sub<2</sub< layer, the TiO<sub<2</sub< interfacial layer deposited on 2D TMDs could lead to more effective carrier modulation by simply changing the contact metal, thereby improving the performance of the Schottky-barrier-modulated FET device. The TiO<sub<2</sub< layer could also suppress the Fermi-level pinning phenomenon usually fixed to the metal−semiconductor interface, resulting in an improvement in transistor performance. Especially, the introduction of the TiO<sub<2</sub< layer contributed to achieving stable device performance. Threshold voltage variation of MoS<sub<2</sub< and WS<sub<2</sub< FETs with the TiO<sub<2</sub< interfacial layer was ~2 V and ~3.6 V, respectively. The theoretical result of the density function theory validated that mid-gap energy states created within the bandgap of 2D MoS<sub<2</sub< can cause a doping effect. The simple approach of introducing a thin interfacial oxide layer offers a promising way toward the implementation of high-performance 2D TMD-based logic circuits. MoS<sub<2</sub< WS<sub<2</sub< interfacial layer contact resistance bias stress stability Chemistry Yusin Pak verfasserin aut Hye Yeon Jang verfasserin aut Jae Hyeon Nam verfasserin aut Tae Hyeon Kim verfasserin aut Seyoung Oh verfasserin aut Sung Mook Choi verfasserin aut Yonghun Kim verfasserin aut Byungjin Cho verfasserin aut In Nanomaterials MDPI AG, 2012 9(2019), 8, p 1155 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:9 year:2019 number:8, p 1155 https://doi.org/10.3390/nano9081155 kostenfrei https://doaj.org/article/a128063efd5145a09903c3de26755dbd kostenfrei https://www.mdpi.com/2079-4991/9/8/1155 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 8, p 1155
spelling	10.3390/nano9081155 doi (DE-627)DOAJ056169094 (DE-599)DOAJa128063efd5145a09903c3de26755dbd DE-627 ger DE-627 rakwb eng QD1-999 Woojin Park verfasserin aut Improvement of the Bias Stress Stability in 2D MoS<sub<2</sub< and WS<sub<2</sub< Transistors with a TiO<sub<2</sub< Interfacial Layer 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The fermi-level pinning phenomenon, which occurs at the metal−semiconductor interface, not only obstructs the achievement of high-performance field effect transistors (FETs) but also results in poor long-term stability. This paper reports on the improvement in gate-bias stress stability in two-dimensional (2D) transition metal dichalcogenide (TMD) FETs with a titanium dioxide (TiO<sub<2</sub<) interfacial layer inserted between the 2D TMDs (MoS<sub<2</sub< or WS<sub<2</sub<) and metal electrodes. Compared to the control MoS<sub<2</sub<, the device without the TiO<sub<2</sub< layer, the TiO<sub<2</sub< interfacial layer deposited on 2D TMDs could lead to more effective carrier modulation by simply changing the contact metal, thereby improving the performance of the Schottky-barrier-modulated FET device. The TiO<sub<2</sub< layer could also suppress the Fermi-level pinning phenomenon usually fixed to the metal−semiconductor interface, resulting in an improvement in transistor performance. Especially, the introduction of the TiO<sub<2</sub< layer contributed to achieving stable device performance. Threshold voltage variation of MoS<sub<2</sub< and WS<sub<2</sub< FETs with the TiO<sub<2</sub< interfacial layer was ~2 V and ~3.6 V, respectively. The theoretical result of the density function theory validated that mid-gap energy states created within the bandgap of 2D MoS<sub<2</sub< can cause a doping effect. The simple approach of introducing a thin interfacial oxide layer offers a promising way toward the implementation of high-performance 2D TMD-based logic circuits. MoS<sub<2</sub< WS<sub<2</sub< interfacial layer contact resistance bias stress stability Chemistry Yusin Pak verfasserin aut Hye Yeon Jang verfasserin aut Jae Hyeon Nam verfasserin aut Tae Hyeon Kim verfasserin aut Seyoung Oh verfasserin aut Sung Mook Choi verfasserin aut Yonghun Kim verfasserin aut Byungjin Cho verfasserin aut In Nanomaterials MDPI AG, 2012 9(2019), 8, p 1155 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:9 year:2019 number:8, p 1155 https://doi.org/10.3390/nano9081155 kostenfrei https://doaj.org/article/a128063efd5145a09903c3de26755dbd kostenfrei https://www.mdpi.com/2079-4991/9/8/1155 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 8, p 1155
allfields_unstemmed	10.3390/nano9081155 doi (DE-627)DOAJ056169094 (DE-599)DOAJa128063efd5145a09903c3de26755dbd DE-627 ger DE-627 rakwb eng QD1-999 Woojin Park verfasserin aut Improvement of the Bias Stress Stability in 2D MoS<sub<2</sub< and WS<sub<2</sub< Transistors with a TiO<sub<2</sub< Interfacial Layer 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The fermi-level pinning phenomenon, which occurs at the metal−semiconductor interface, not only obstructs the achievement of high-performance field effect transistors (FETs) but also results in poor long-term stability. This paper reports on the improvement in gate-bias stress stability in two-dimensional (2D) transition metal dichalcogenide (TMD) FETs with a titanium dioxide (TiO<sub<2</sub<) interfacial layer inserted between the 2D TMDs (MoS<sub<2</sub< or WS<sub<2</sub<) and metal electrodes. Compared to the control MoS<sub<2</sub<, the device without the TiO<sub<2</sub< layer, the TiO<sub<2</sub< interfacial layer deposited on 2D TMDs could lead to more effective carrier modulation by simply changing the contact metal, thereby improving the performance of the Schottky-barrier-modulated FET device. The TiO<sub<2</sub< layer could also suppress the Fermi-level pinning phenomenon usually fixed to the metal−semiconductor interface, resulting in an improvement in transistor performance. Especially, the introduction of the TiO<sub<2</sub< layer contributed to achieving stable device performance. Threshold voltage variation of MoS<sub<2</sub< and WS<sub<2</sub< FETs with the TiO<sub<2</sub< interfacial layer was ~2 V and ~3.6 V, respectively. The theoretical result of the density function theory validated that mid-gap energy states created within the bandgap of 2D MoS<sub<2</sub< can cause a doping effect. The simple approach of introducing a thin interfacial oxide layer offers a promising way toward the implementation of high-performance 2D TMD-based logic circuits. MoS<sub<2</sub< WS<sub<2</sub< interfacial layer contact resistance bias stress stability Chemistry Yusin Pak verfasserin aut Hye Yeon Jang verfasserin aut Jae Hyeon Nam verfasserin aut Tae Hyeon Kim verfasserin aut Seyoung Oh verfasserin aut Sung Mook Choi verfasserin aut Yonghun Kim verfasserin aut Byungjin Cho verfasserin aut In Nanomaterials MDPI AG, 2012 9(2019), 8, p 1155 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:9 year:2019 number:8, p 1155 https://doi.org/10.3390/nano9081155 kostenfrei https://doaj.org/article/a128063efd5145a09903c3de26755dbd kostenfrei https://www.mdpi.com/2079-4991/9/8/1155 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 8, p 1155
allfieldsGer	10.3390/nano9081155 doi (DE-627)DOAJ056169094 (DE-599)DOAJa128063efd5145a09903c3de26755dbd DE-627 ger DE-627 rakwb eng QD1-999 Woojin Park verfasserin aut Improvement of the Bias Stress Stability in 2D MoS<sub<2</sub< and WS<sub<2</sub< Transistors with a TiO<sub<2</sub< Interfacial Layer 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The fermi-level pinning phenomenon, which occurs at the metal−semiconductor interface, not only obstructs the achievement of high-performance field effect transistors (FETs) but also results in poor long-term stability. This paper reports on the improvement in gate-bias stress stability in two-dimensional (2D) transition metal dichalcogenide (TMD) FETs with a titanium dioxide (TiO<sub<2</sub<) interfacial layer inserted between the 2D TMDs (MoS<sub<2</sub< or WS<sub<2</sub<) and metal electrodes. Compared to the control MoS<sub<2</sub<, the device without the TiO<sub<2</sub< layer, the TiO<sub<2</sub< interfacial layer deposited on 2D TMDs could lead to more effective carrier modulation by simply changing the contact metal, thereby improving the performance of the Schottky-barrier-modulated FET device. The TiO<sub<2</sub< layer could also suppress the Fermi-level pinning phenomenon usually fixed to the metal−semiconductor interface, resulting in an improvement in transistor performance. Especially, the introduction of the TiO<sub<2</sub< layer contributed to achieving stable device performance. Threshold voltage variation of MoS<sub<2</sub< and WS<sub<2</sub< FETs with the TiO<sub<2</sub< interfacial layer was ~2 V and ~3.6 V, respectively. The theoretical result of the density function theory validated that mid-gap energy states created within the bandgap of 2D MoS<sub<2</sub< can cause a doping effect. The simple approach of introducing a thin interfacial oxide layer offers a promising way toward the implementation of high-performance 2D TMD-based logic circuits. MoS<sub<2</sub< WS<sub<2</sub< interfacial layer contact resistance bias stress stability Chemistry Yusin Pak verfasserin aut Hye Yeon Jang verfasserin aut Jae Hyeon Nam verfasserin aut Tae Hyeon Kim verfasserin aut Seyoung Oh verfasserin aut Sung Mook Choi verfasserin aut Yonghun Kim verfasserin aut Byungjin Cho verfasserin aut In Nanomaterials MDPI AG, 2012 9(2019), 8, p 1155 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:9 year:2019 number:8, p 1155 https://doi.org/10.3390/nano9081155 kostenfrei https://doaj.org/article/a128063efd5145a09903c3de26755dbd kostenfrei https://www.mdpi.com/2079-4991/9/8/1155 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 8, p 1155
allfieldsSound	10.3390/nano9081155 doi (DE-627)DOAJ056169094 (DE-599)DOAJa128063efd5145a09903c3de26755dbd DE-627 ger DE-627 rakwb eng QD1-999 Woojin Park verfasserin aut Improvement of the Bias Stress Stability in 2D MoS<sub<2</sub< and WS<sub<2</sub< Transistors with a TiO<sub<2</sub< Interfacial Layer 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The fermi-level pinning phenomenon, which occurs at the metal−semiconductor interface, not only obstructs the achievement of high-performance field effect transistors (FETs) but also results in poor long-term stability. This paper reports on the improvement in gate-bias stress stability in two-dimensional (2D) transition metal dichalcogenide (TMD) FETs with a titanium dioxide (TiO<sub<2</sub<) interfacial layer inserted between the 2D TMDs (MoS<sub<2</sub< or WS<sub<2</sub<) and metal electrodes. Compared to the control MoS<sub<2</sub<, the device without the TiO<sub<2</sub< layer, the TiO<sub<2</sub< interfacial layer deposited on 2D TMDs could lead to more effective carrier modulation by simply changing the contact metal, thereby improving the performance of the Schottky-barrier-modulated FET device. The TiO<sub<2</sub< layer could also suppress the Fermi-level pinning phenomenon usually fixed to the metal−semiconductor interface, resulting in an improvement in transistor performance. Especially, the introduction of the TiO<sub<2</sub< layer contributed to achieving stable device performance. Threshold voltage variation of MoS<sub<2</sub< and WS<sub<2</sub< FETs with the TiO<sub<2</sub< interfacial layer was ~2 V and ~3.6 V, respectively. The theoretical result of the density function theory validated that mid-gap energy states created within the bandgap of 2D MoS<sub<2</sub< can cause a doping effect. The simple approach of introducing a thin interfacial oxide layer offers a promising way toward the implementation of high-performance 2D TMD-based logic circuits. MoS<sub<2</sub< WS<sub<2</sub< interfacial layer contact resistance bias stress stability Chemistry Yusin Pak verfasserin aut Hye Yeon Jang verfasserin aut Jae Hyeon Nam verfasserin aut Tae Hyeon Kim verfasserin aut Seyoung Oh verfasserin aut Sung Mook Choi verfasserin aut Yonghun Kim verfasserin aut Byungjin Cho verfasserin aut In Nanomaterials MDPI AG, 2012 9(2019), 8, p 1155 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:9 year:2019 number:8, p 1155 https://doi.org/10.3390/nano9081155 kostenfrei https://doaj.org/article/a128063efd5145a09903c3de26755dbd kostenfrei https://www.mdpi.com/2079-4991/9/8/1155 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 8, p 1155
language	English
source	In Nanomaterials 9(2019), 8, p 1155 volume:9 year:2019 number:8, p 1155
sourceStr	In Nanomaterials 9(2019), 8, p 1155 volume:9 year:2019 number:8, p 1155
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	MoS<sub<2</sub< WS<sub<2</sub< interfacial layer contact resistance bias stress stability Chemistry
isfreeaccess_bool	true
container_title	Nanomaterials
authorswithroles_txt_mv	Woojin Park @@aut@@ Yusin Pak @@aut@@ Hye Yeon Jang @@aut@@ Jae Hyeon Nam @@aut@@ Tae Hyeon Kim @@aut@@ Seyoung Oh @@aut@@ Sung Mook Choi @@aut@@ Yonghun Kim @@aut@@ Byungjin Cho @@aut@@
publishDateDaySort_date	2019-01-01T00:00:00Z
hierarchy_top_id	718627199
id	DOAJ056169094
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ056169094</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230308195657.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230227s2019 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.3390/nano9081155</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ056169094</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJa128063efd5145a09903c3de26755dbd</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QD1-999</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Woojin Park</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Improvement of the Bias Stress Stability in 2D MoS<sub<2</sub< and WS<sub<2</sub< Transistors with a TiO<sub<2</sub< Interfacial Layer</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2019</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The fermi-level pinning phenomenon, which occurs at the metal−semiconductor interface, not only obstructs the achievement of high-performance field effect transistors (FETs) but also results in poor long-term stability. This paper reports on the improvement in gate-bias stress stability in two-dimensional (2D) transition metal dichalcogenide (TMD) FETs with a titanium dioxide (TiO<sub<2</sub<) interfacial layer inserted between the 2D TMDs (MoS<sub<2</sub< or WS<sub<2</sub<) and metal electrodes. Compared to the control MoS<sub<2</sub<, the device without the TiO<sub<2</sub< layer, the TiO<sub<2</sub< interfacial layer deposited on 2D TMDs could lead to more effective carrier modulation by simply changing the contact metal, thereby improving the performance of the Schottky-barrier-modulated FET device. The TiO<sub<2</sub< layer could also suppress the Fermi-level pinning phenomenon usually fixed to the metal−semiconductor interface, resulting in an improvement in transistor performance. Especially, the introduction of the TiO<sub<2</sub< layer contributed to achieving stable device performance. Threshold voltage variation of MoS<sub<2</sub< and WS<sub<2</sub< FETs with the TiO<sub<2</sub< interfacial layer was ~2 V and ~3.6 V, respectively. The theoretical result of the density function theory validated that mid-gap energy states created within the bandgap of 2D MoS<sub<2</sub< can cause a doping effect. The simple approach of introducing a thin interfacial oxide layer offers a promising way toward the implementation of high-performance 2D TMD-based logic circuits.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">MoS<sub<2</sub<</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">WS<sub<2</sub<</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">interfacial layer</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">contact resistance</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">bias stress stability</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Chemistry</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Yusin Pak</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Hye Yeon Jang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Jae Hyeon Nam</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Tae Hyeon Kim</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Seyoung Oh</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Sung Mook Choi</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Yonghun Kim</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Byungjin Cho</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">Nanomaterials</subfield><subfield code="d">MDPI AG, 2012</subfield><subfield code="g">9(2019), 8, p 1155</subfield><subfield code="w">(DE-627)718627199</subfield><subfield code="w">(DE-600)2662255-5</subfield><subfield code="x">20794991</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:9</subfield><subfield code="g">year:2019</subfield><subfield code="g">number:8, p 1155</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.3390/nano9081155</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/a128063efd5145a09903c3de26755dbd</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://www.mdpi.com/2079-4991/9/8/1155</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2079-4991</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2108</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2119</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">9</subfield><subfield code="j">2019</subfield><subfield code="e">8, p 1155</subfield></datafield></record></collection>
callnumber-first	Q - Science
author	Woojin Park
spellingShingle	Woojin Park misc QD1-999 misc MoS<sub<2</sub< misc WS<sub<2</sub< misc interfacial layer misc contact resistance misc bias stress stability misc Chemistry Improvement of the Bias Stress Stability in 2D MoS<sub<2</sub< and WS<sub<2</sub< Transistors with a TiO<sub<2</sub< Interfacial Layer
authorStr	Woojin Park
ppnlink_with_tag_str_mv	@@773@@(DE-627)718627199
format	electronic Article
delete_txt_mv	keep
author_role	aut aut aut aut aut aut aut aut aut
collection	DOAJ
remote_str	true
callnumber-label	QD1-999
illustrated	Not Illustrated
issn	20794991
topic_title	QD1-999 Improvement of the Bias Stress Stability in 2D MoS<sub<2</sub< and WS<sub<2</sub< Transistors with a TiO<sub<2</sub< Interfacial Layer MoS<sub<2</sub< WS<sub<2</sub< interfacial layer contact resistance bias stress stability
topic	misc QD1-999 misc MoS<sub<2</sub< misc WS<sub<2</sub< misc interfacial layer misc contact resistance misc bias stress stability misc Chemistry
topic_unstemmed	misc QD1-999 misc MoS<sub<2</sub< misc WS<sub<2</sub< misc interfacial layer misc contact resistance misc bias stress stability misc Chemistry
topic_browse	misc QD1-999 misc MoS<sub<2</sub< misc WS<sub<2</sub< misc interfacial layer misc contact resistance misc bias stress stability misc Chemistry
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	cr
hierarchy_parent_title	Nanomaterials
hierarchy_parent_id	718627199
hierarchy_top_title	Nanomaterials
isfreeaccess_txt	true
familylinks_str_mv	(DE-627)718627199 (DE-600)2662255-5
title	Improvement of the Bias Stress Stability in 2D MoS<sub<2</sub< and WS<sub<2</sub< Transistors with a TiO<sub<2</sub< Interfacial Layer
ctrlnum	(DE-627)DOAJ056169094 (DE-599)DOAJa128063efd5145a09903c3de26755dbd
title_full	Improvement of the Bias Stress Stability in 2D MoS<sub<2</sub< and WS<sub<2</sub< Transistors with a TiO<sub<2</sub< Interfacial Layer
author_sort	Woojin Park
journal	Nanomaterials
journalStr	Nanomaterials
callnumber-first-code	Q
lang_code	eng
isOA_bool	true
recordtype	marc
publishDateSort	2019
contenttype_str_mv	txt
author_browse	Woojin Park Yusin Pak Hye Yeon Jang Jae Hyeon Nam Tae Hyeon Kim Seyoung Oh Sung Mook Choi Yonghun Kim Byungjin Cho
container_volume	9
class	QD1-999
format_se	Elektronische Aufsätze
author-letter	Woojin Park
doi_str_mv	10.3390/nano9081155
author2-role	verfasserin
title_sort	improvement of the bias stress stability in 2d mos<sub<2</sub< and ws<sub<2</sub< transistors with a tio<sub<2</sub< interfacial layer
callnumber	QD1-999
title_auth	Improvement of the Bias Stress Stability in 2D MoS<sub<2</sub< and WS<sub<2</sub< Transistors with a TiO<sub<2</sub< Interfacial Layer
abstract	The fermi-level pinning phenomenon, which occurs at the metal−semiconductor interface, not only obstructs the achievement of high-performance field effect transistors (FETs) but also results in poor long-term stability. This paper reports on the improvement in gate-bias stress stability in two-dimensional (2D) transition metal dichalcogenide (TMD) FETs with a titanium dioxide (TiO<sub<2</sub<) interfacial layer inserted between the 2D TMDs (MoS<sub<2</sub< or WS<sub<2</sub<) and metal electrodes. Compared to the control MoS<sub<2</sub<, the device without the TiO<sub<2</sub< layer, the TiO<sub<2</sub< interfacial layer deposited on 2D TMDs could lead to more effective carrier modulation by simply changing the contact metal, thereby improving the performance of the Schottky-barrier-modulated FET device. The TiO<sub<2</sub< layer could also suppress the Fermi-level pinning phenomenon usually fixed to the metal−semiconductor interface, resulting in an improvement in transistor performance. Especially, the introduction of the TiO<sub<2</sub< layer contributed to achieving stable device performance. Threshold voltage variation of MoS<sub<2</sub< and WS<sub<2</sub< FETs with the TiO<sub<2</sub< interfacial layer was ~2 V and ~3.6 V, respectively. The theoretical result of the density function theory validated that mid-gap energy states created within the bandgap of 2D MoS<sub<2</sub< can cause a doping effect. The simple approach of introducing a thin interfacial oxide layer offers a promising way toward the implementation of high-performance 2D TMD-based logic circuits.
abstractGer	The fermi-level pinning phenomenon, which occurs at the metal−semiconductor interface, not only obstructs the achievement of high-performance field effect transistors (FETs) but also results in poor long-term stability. This paper reports on the improvement in gate-bias stress stability in two-dimensional (2D) transition metal dichalcogenide (TMD) FETs with a titanium dioxide (TiO<sub<2</sub<) interfacial layer inserted between the 2D TMDs (MoS<sub<2</sub< or WS<sub<2</sub<) and metal electrodes. Compared to the control MoS<sub<2</sub<, the device without the TiO<sub<2</sub< layer, the TiO<sub<2</sub< interfacial layer deposited on 2D TMDs could lead to more effective carrier modulation by simply changing the contact metal, thereby improving the performance of the Schottky-barrier-modulated FET device. The TiO<sub<2</sub< layer could also suppress the Fermi-level pinning phenomenon usually fixed to the metal−semiconductor interface, resulting in an improvement in transistor performance. Especially, the introduction of the TiO<sub<2</sub< layer contributed to achieving stable device performance. Threshold voltage variation of MoS<sub<2</sub< and WS<sub<2</sub< FETs with the TiO<sub<2</sub< interfacial layer was ~2 V and ~3.6 V, respectively. The theoretical result of the density function theory validated that mid-gap energy states created within the bandgap of 2D MoS<sub<2</sub< can cause a doping effect. The simple approach of introducing a thin interfacial oxide layer offers a promising way toward the implementation of high-performance 2D TMD-based logic circuits.
abstract_unstemmed	The fermi-level pinning phenomenon, which occurs at the metal−semiconductor interface, not only obstructs the achievement of high-performance field effect transistors (FETs) but also results in poor long-term stability. This paper reports on the improvement in gate-bias stress stability in two-dimensional (2D) transition metal dichalcogenide (TMD) FETs with a titanium dioxide (TiO<sub<2</sub<) interfacial layer inserted between the 2D TMDs (MoS<sub<2</sub< or WS<sub<2</sub<) and metal electrodes. Compared to the control MoS<sub<2</sub<, the device without the TiO<sub<2</sub< layer, the TiO<sub<2</sub< interfacial layer deposited on 2D TMDs could lead to more effective carrier modulation by simply changing the contact metal, thereby improving the performance of the Schottky-barrier-modulated FET device. The TiO<sub<2</sub< layer could also suppress the Fermi-level pinning phenomenon usually fixed to the metal−semiconductor interface, resulting in an improvement in transistor performance. Especially, the introduction of the TiO<sub<2</sub< layer contributed to achieving stable device performance. Threshold voltage variation of MoS<sub<2</sub< and WS<sub<2</sub< FETs with the TiO<sub<2</sub< interfacial layer was ~2 V and ~3.6 V, respectively. The theoretical result of the density function theory validated that mid-gap energy states created within the bandgap of 2D MoS<sub<2</sub< can cause a doping effect. The simple approach of introducing a thin interfacial oxide layer offers a promising way toward the implementation of high-performance 2D TMD-based logic circuits.
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700
container_issue	8, p 1155
title_short	Improvement of the Bias Stress Stability in 2D MoS<sub<2</sub< and WS<sub<2</sub< Transistors with a TiO<sub<2</sub< Interfacial Layer
url	https://doi.org/10.3390/nano9081155 https://doaj.org/article/a128063efd5145a09903c3de26755dbd https://www.mdpi.com/2079-4991/9/8/1155 https://doaj.org/toc/2079-4991
remote_bool	true
author2	Yusin Pak Hye Yeon Jang Jae Hyeon Nam Tae Hyeon Kim Seyoung Oh Sung Mook Choi Yonghun Kim Byungjin Cho
author2Str	Yusin Pak Hye Yeon Jang Jae Hyeon Nam Tae Hyeon Kim Seyoung Oh Sung Mook Choi Yonghun Kim Byungjin Cho
ppnlink	718627199
callnumber-subject	QD - Chemistry
mediatype_str_mv	c
isOA_txt	true
hochschulschrift_bool	false
doi_str	10.3390/nano9081155
callnumber-a	QD1-999
up_date	2024-07-03T19:16:45.427Z
_version_	1803586586999259136
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ056169094</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230308195657.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230227s2019 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.3390/nano9081155</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ056169094</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJa128063efd5145a09903c3de26755dbd</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QD1-999</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Woojin Park</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Improvement of the Bias Stress Stability in 2D MoS<sub<2</sub< and WS<sub<2</sub< Transistors with a TiO<sub<2</sub< Interfacial Layer</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2019</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The fermi-level pinning phenomenon, which occurs at the metal−semiconductor interface, not only obstructs the achievement of high-performance field effect transistors (FETs) but also results in poor long-term stability. This paper reports on the improvement in gate-bias stress stability in two-dimensional (2D) transition metal dichalcogenide (TMD) FETs with a titanium dioxide (TiO<sub<2</sub<) interfacial layer inserted between the 2D TMDs (MoS<sub<2</sub< or WS<sub<2</sub<) and metal electrodes. Compared to the control MoS<sub<2</sub<, the device without the TiO<sub<2</sub< layer, the TiO<sub<2</sub< interfacial layer deposited on 2D TMDs could lead to more effective carrier modulation by simply changing the contact metal, thereby improving the performance of the Schottky-barrier-modulated FET device. The TiO<sub<2</sub< layer could also suppress the Fermi-level pinning phenomenon usually fixed to the metal−semiconductor interface, resulting in an improvement in transistor performance. Especially, the introduction of the TiO<sub<2</sub< layer contributed to achieving stable device performance. Threshold voltage variation of MoS<sub<2</sub< and WS<sub<2</sub< FETs with the TiO<sub<2</sub< interfacial layer was ~2 V and ~3.6 V, respectively. The theoretical result of the density function theory validated that mid-gap energy states created within the bandgap of 2D MoS<sub<2</sub< can cause a doping effect. The simple approach of introducing a thin interfacial oxide layer offers a promising way toward the implementation of high-performance 2D TMD-based logic circuits.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">MoS<sub<2</sub<</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">WS<sub<2</sub<</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">interfacial layer</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">contact resistance</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">bias stress stability</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Chemistry</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Yusin Pak</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Hye Yeon Jang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Jae Hyeon Nam</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Tae Hyeon Kim</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Seyoung Oh</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Sung Mook Choi</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Yonghun Kim</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Byungjin Cho</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">Nanomaterials</subfield><subfield code="d">MDPI AG, 2012</subfield><subfield code="g">9(2019), 8, p 1155</subfield><subfield code="w">(DE-627)718627199</subfield><subfield code="w">(DE-600)2662255-5</subfield><subfield code="x">20794991</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:9</subfield><subfield code="g">year:2019</subfield><subfield code="g">number:8, p 1155</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.3390/nano9081155</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/a128063efd5145a09903c3de26755dbd</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://www.mdpi.com/2079-4991/9/8/1155</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2079-4991</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2108</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2119</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">9</subfield><subfield code="j">2019</subfield><subfield code="e">8, p 1155</subfield></datafield></record></collection>
score	7.4006186

Nicht das Richtige dabei?

Schreiben Sie uns!

Improvement of the Bias Stress Stability in 2D MoS<sub<2</sub< and WS<sub<2</sub< Transistors with a TiO<sub<2</sub< Interfacial Layer

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?