Improvement of the Bias Stress Stability in 2D MoS<sub<2</sub< and WS<sub<2</sub< Transistors with a TiO<sub<2</sub< Interfacial Layer
The fermi-level pinning phenomenon, which occurs at the metal−semiconductor interface, not only obstructs the achievement of high-performance field effect transistors (FETs) but also results in poor long-term stability. This paper reports on the improvement in gate-bias stress stability in two-dimen...
Ausführliche Beschreibung
Autor*in: |
Woojin Park [verfasserIn] Yusin Pak [verfasserIn] Hye Yeon Jang [verfasserIn] Jae Hyeon Nam [verfasserIn] Tae Hyeon Kim [verfasserIn] Seyoung Oh [verfasserIn] Sung Mook Choi [verfasserIn] Yonghun Kim [verfasserIn] Byungjin Cho [verfasserIn] |
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E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2019 |
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Übergeordnetes Werk: |
In: Nanomaterials - MDPI AG, 2012, 9(2019), 8, p 1155 |
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Übergeordnetes Werk: |
volume:9 ; year:2019 ; number:8, p 1155 |
Links: |
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DOI / URN: |
10.3390/nano9081155 |
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Katalog-ID: |
DOAJ056169094 |
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10.3390/nano9081155 doi (DE-627)DOAJ056169094 (DE-599)DOAJa128063efd5145a09903c3de26755dbd DE-627 ger DE-627 rakwb eng QD1-999 Woojin Park verfasserin aut Improvement of the Bias Stress Stability in 2D MoS<sub<2</sub< and WS<sub<2</sub< Transistors with a TiO<sub<2</sub< Interfacial Layer 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The fermi-level pinning phenomenon, which occurs at the metal−semiconductor interface, not only obstructs the achievement of high-performance field effect transistors (FETs) but also results in poor long-term stability. This paper reports on the improvement in gate-bias stress stability in two-dimensional (2D) transition metal dichalcogenide (TMD) FETs with a titanium dioxide (TiO<sub<2</sub<) interfacial layer inserted between the 2D TMDs (MoS<sub<2</sub< or WS<sub<2</sub<) and metal electrodes. Compared to the control MoS<sub<2</sub<, the device without the TiO<sub<2</sub< layer, the TiO<sub<2</sub< interfacial layer deposited on 2D TMDs could lead to more effective carrier modulation by simply changing the contact metal, thereby improving the performance of the Schottky-barrier-modulated FET device. The TiO<sub<2</sub< layer could also suppress the Fermi-level pinning phenomenon usually fixed to the metal−semiconductor interface, resulting in an improvement in transistor performance. Especially, the introduction of the TiO<sub<2</sub< layer contributed to achieving stable device performance. Threshold voltage variation of MoS<sub<2</sub< and WS<sub<2</sub< FETs with the TiO<sub<2</sub< interfacial layer was ~2 V and ~3.6 V, respectively. The theoretical result of the density function theory validated that mid-gap energy states created within the bandgap of 2D MoS<sub<2</sub< can cause a doping effect. The simple approach of introducing a thin interfacial oxide layer offers a promising way toward the implementation of high-performance 2D TMD-based logic circuits. MoS<sub<2</sub< WS<sub<2</sub< interfacial layer contact resistance bias stress stability Chemistry Yusin Pak verfasserin aut Hye Yeon Jang verfasserin aut Jae Hyeon Nam verfasserin aut Tae Hyeon Kim verfasserin aut Seyoung Oh verfasserin aut Sung Mook Choi verfasserin aut Yonghun Kim verfasserin aut Byungjin Cho verfasserin aut In Nanomaterials MDPI AG, 2012 9(2019), 8, p 1155 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:9 year:2019 number:8, p 1155 https://doi.org/10.3390/nano9081155 kostenfrei https://doaj.org/article/a128063efd5145a09903c3de26755dbd kostenfrei https://www.mdpi.com/2079-4991/9/8/1155 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 8, p 1155 |
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10.3390/nano9081155 doi (DE-627)DOAJ056169094 (DE-599)DOAJa128063efd5145a09903c3de26755dbd DE-627 ger DE-627 rakwb eng QD1-999 Woojin Park verfasserin aut Improvement of the Bias Stress Stability in 2D MoS<sub<2</sub< and WS<sub<2</sub< Transistors with a TiO<sub<2</sub< Interfacial Layer 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The fermi-level pinning phenomenon, which occurs at the metal−semiconductor interface, not only obstructs the achievement of high-performance field effect transistors (FETs) but also results in poor long-term stability. This paper reports on the improvement in gate-bias stress stability in two-dimensional (2D) transition metal dichalcogenide (TMD) FETs with a titanium dioxide (TiO<sub<2</sub<) interfacial layer inserted between the 2D TMDs (MoS<sub<2</sub< or WS<sub<2</sub<) and metal electrodes. Compared to the control MoS<sub<2</sub<, the device without the TiO<sub<2</sub< layer, the TiO<sub<2</sub< interfacial layer deposited on 2D TMDs could lead to more effective carrier modulation by simply changing the contact metal, thereby improving the performance of the Schottky-barrier-modulated FET device. The TiO<sub<2</sub< layer could also suppress the Fermi-level pinning phenomenon usually fixed to the metal−semiconductor interface, resulting in an improvement in transistor performance. Especially, the introduction of the TiO<sub<2</sub< layer contributed to achieving stable device performance. Threshold voltage variation of MoS<sub<2</sub< and WS<sub<2</sub< FETs with the TiO<sub<2</sub< interfacial layer was ~2 V and ~3.6 V, respectively. The theoretical result of the density function theory validated that mid-gap energy states created within the bandgap of 2D MoS<sub<2</sub< can cause a doping effect. The simple approach of introducing a thin interfacial oxide layer offers a promising way toward the implementation of high-performance 2D TMD-based logic circuits. MoS<sub<2</sub< WS<sub<2</sub< interfacial layer contact resistance bias stress stability Chemistry Yusin Pak verfasserin aut Hye Yeon Jang verfasserin aut Jae Hyeon Nam verfasserin aut Tae Hyeon Kim verfasserin aut Seyoung Oh verfasserin aut Sung Mook Choi verfasserin aut Yonghun Kim verfasserin aut Byungjin Cho verfasserin aut In Nanomaterials MDPI AG, 2012 9(2019), 8, p 1155 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:9 year:2019 number:8, p 1155 https://doi.org/10.3390/nano9081155 kostenfrei https://doaj.org/article/a128063efd5145a09903c3de26755dbd kostenfrei https://www.mdpi.com/2079-4991/9/8/1155 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 8, p 1155 |
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10.3390/nano9081155 doi (DE-627)DOAJ056169094 (DE-599)DOAJa128063efd5145a09903c3de26755dbd DE-627 ger DE-627 rakwb eng QD1-999 Woojin Park verfasserin aut Improvement of the Bias Stress Stability in 2D MoS<sub<2</sub< and WS<sub<2</sub< Transistors with a TiO<sub<2</sub< Interfacial Layer 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The fermi-level pinning phenomenon, which occurs at the metal−semiconductor interface, not only obstructs the achievement of high-performance field effect transistors (FETs) but also results in poor long-term stability. This paper reports on the improvement in gate-bias stress stability in two-dimensional (2D) transition metal dichalcogenide (TMD) FETs with a titanium dioxide (TiO<sub<2</sub<) interfacial layer inserted between the 2D TMDs (MoS<sub<2</sub< or WS<sub<2</sub<) and metal electrodes. Compared to the control MoS<sub<2</sub<, the device without the TiO<sub<2</sub< layer, the TiO<sub<2</sub< interfacial layer deposited on 2D TMDs could lead to more effective carrier modulation by simply changing the contact metal, thereby improving the performance of the Schottky-barrier-modulated FET device. The TiO<sub<2</sub< layer could also suppress the Fermi-level pinning phenomenon usually fixed to the metal−semiconductor interface, resulting in an improvement in transistor performance. Especially, the introduction of the TiO<sub<2</sub< layer contributed to achieving stable device performance. Threshold voltage variation of MoS<sub<2</sub< and WS<sub<2</sub< FETs with the TiO<sub<2</sub< interfacial layer was ~2 V and ~3.6 V, respectively. The theoretical result of the density function theory validated that mid-gap energy states created within the bandgap of 2D MoS<sub<2</sub< can cause a doping effect. The simple approach of introducing a thin interfacial oxide layer offers a promising way toward the implementation of high-performance 2D TMD-based logic circuits. MoS<sub<2</sub< WS<sub<2</sub< interfacial layer contact resistance bias stress stability Chemistry Yusin Pak verfasserin aut Hye Yeon Jang verfasserin aut Jae Hyeon Nam verfasserin aut Tae Hyeon Kim verfasserin aut Seyoung Oh verfasserin aut Sung Mook Choi verfasserin aut Yonghun Kim verfasserin aut Byungjin Cho verfasserin aut In Nanomaterials MDPI AG, 2012 9(2019), 8, p 1155 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:9 year:2019 number:8, p 1155 https://doi.org/10.3390/nano9081155 kostenfrei https://doaj.org/article/a128063efd5145a09903c3de26755dbd kostenfrei https://www.mdpi.com/2079-4991/9/8/1155 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 8, p 1155 |
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10.3390/nano9081155 doi (DE-627)DOAJ056169094 (DE-599)DOAJa128063efd5145a09903c3de26755dbd DE-627 ger DE-627 rakwb eng QD1-999 Woojin Park verfasserin aut Improvement of the Bias Stress Stability in 2D MoS<sub<2</sub< and WS<sub<2</sub< Transistors with a TiO<sub<2</sub< Interfacial Layer 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The fermi-level pinning phenomenon, which occurs at the metal−semiconductor interface, not only obstructs the achievement of high-performance field effect transistors (FETs) but also results in poor long-term stability. This paper reports on the improvement in gate-bias stress stability in two-dimensional (2D) transition metal dichalcogenide (TMD) FETs with a titanium dioxide (TiO<sub<2</sub<) interfacial layer inserted between the 2D TMDs (MoS<sub<2</sub< or WS<sub<2</sub<) and metal electrodes. Compared to the control MoS<sub<2</sub<, the device without the TiO<sub<2</sub< layer, the TiO<sub<2</sub< interfacial layer deposited on 2D TMDs could lead to more effective carrier modulation by simply changing the contact metal, thereby improving the performance of the Schottky-barrier-modulated FET device. The TiO<sub<2</sub< layer could also suppress the Fermi-level pinning phenomenon usually fixed to the metal−semiconductor interface, resulting in an improvement in transistor performance. Especially, the introduction of the TiO<sub<2</sub< layer contributed to achieving stable device performance. Threshold voltage variation of MoS<sub<2</sub< and WS<sub<2</sub< FETs with the TiO<sub<2</sub< interfacial layer was ~2 V and ~3.6 V, respectively. The theoretical result of the density function theory validated that mid-gap energy states created within the bandgap of 2D MoS<sub<2</sub< can cause a doping effect. The simple approach of introducing a thin interfacial oxide layer offers a promising way toward the implementation of high-performance 2D TMD-based logic circuits. MoS<sub<2</sub< WS<sub<2</sub< interfacial layer contact resistance bias stress stability Chemistry Yusin Pak verfasserin aut Hye Yeon Jang verfasserin aut Jae Hyeon Nam verfasserin aut Tae Hyeon Kim verfasserin aut Seyoung Oh verfasserin aut Sung Mook Choi verfasserin aut Yonghun Kim verfasserin aut Byungjin Cho verfasserin aut In Nanomaterials MDPI AG, 2012 9(2019), 8, p 1155 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:9 year:2019 number:8, p 1155 https://doi.org/10.3390/nano9081155 kostenfrei https://doaj.org/article/a128063efd5145a09903c3de26755dbd kostenfrei https://www.mdpi.com/2079-4991/9/8/1155 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 8, p 1155 |
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10.3390/nano9081155 doi (DE-627)DOAJ056169094 (DE-599)DOAJa128063efd5145a09903c3de26755dbd DE-627 ger DE-627 rakwb eng QD1-999 Woojin Park verfasserin aut Improvement of the Bias Stress Stability in 2D MoS<sub<2</sub< and WS<sub<2</sub< Transistors with a TiO<sub<2</sub< Interfacial Layer 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The fermi-level pinning phenomenon, which occurs at the metal−semiconductor interface, not only obstructs the achievement of high-performance field effect transistors (FETs) but also results in poor long-term stability. This paper reports on the improvement in gate-bias stress stability in two-dimensional (2D) transition metal dichalcogenide (TMD) FETs with a titanium dioxide (TiO<sub<2</sub<) interfacial layer inserted between the 2D TMDs (MoS<sub<2</sub< or WS<sub<2</sub<) and metal electrodes. Compared to the control MoS<sub<2</sub<, the device without the TiO<sub<2</sub< layer, the TiO<sub<2</sub< interfacial layer deposited on 2D TMDs could lead to more effective carrier modulation by simply changing the contact metal, thereby improving the performance of the Schottky-barrier-modulated FET device. The TiO<sub<2</sub< layer could also suppress the Fermi-level pinning phenomenon usually fixed to the metal−semiconductor interface, resulting in an improvement in transistor performance. Especially, the introduction of the TiO<sub<2</sub< layer contributed to achieving stable device performance. Threshold voltage variation of MoS<sub<2</sub< and WS<sub<2</sub< FETs with the TiO<sub<2</sub< interfacial layer was ~2 V and ~3.6 V, respectively. The theoretical result of the density function theory validated that mid-gap energy states created within the bandgap of 2D MoS<sub<2</sub< can cause a doping effect. The simple approach of introducing a thin interfacial oxide layer offers a promising way toward the implementation of high-performance 2D TMD-based logic circuits. MoS<sub<2</sub< WS<sub<2</sub< interfacial layer contact resistance bias stress stability Chemistry Yusin Pak verfasserin aut Hye Yeon Jang verfasserin aut Jae Hyeon Nam verfasserin aut Tae Hyeon Kim verfasserin aut Seyoung Oh verfasserin aut Sung Mook Choi verfasserin aut Yonghun Kim verfasserin aut Byungjin Cho verfasserin aut In Nanomaterials MDPI AG, 2012 9(2019), 8, p 1155 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:9 year:2019 number:8, p 1155 https://doi.org/10.3390/nano9081155 kostenfrei https://doaj.org/article/a128063efd5145a09903c3de26755dbd kostenfrei https://www.mdpi.com/2079-4991/9/8/1155 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 8, p 1155 |
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Improvement of the Bias Stress Stability in 2D MoS<sub<2</sub< and WS<sub<2</sub< Transistors with a TiO<sub<2</sub< Interfacial Layer |
abstract |
The fermi-level pinning phenomenon, which occurs at the metal−semiconductor interface, not only obstructs the achievement of high-performance field effect transistors (FETs) but also results in poor long-term stability. This paper reports on the improvement in gate-bias stress stability in two-dimensional (2D) transition metal dichalcogenide (TMD) FETs with a titanium dioxide (TiO<sub<2</sub<) interfacial layer inserted between the 2D TMDs (MoS<sub<2</sub< or WS<sub<2</sub<) and metal electrodes. Compared to the control MoS<sub<2</sub<, the device without the TiO<sub<2</sub< layer, the TiO<sub<2</sub< interfacial layer deposited on 2D TMDs could lead to more effective carrier modulation by simply changing the contact metal, thereby improving the performance of the Schottky-barrier-modulated FET device. The TiO<sub<2</sub< layer could also suppress the Fermi-level pinning phenomenon usually fixed to the metal−semiconductor interface, resulting in an improvement in transistor performance. Especially, the introduction of the TiO<sub<2</sub< layer contributed to achieving stable device performance. Threshold voltage variation of MoS<sub<2</sub< and WS<sub<2</sub< FETs with the TiO<sub<2</sub< interfacial layer was ~2 V and ~3.6 V, respectively. The theoretical result of the density function theory validated that mid-gap energy states created within the bandgap of 2D MoS<sub<2</sub< can cause a doping effect. The simple approach of introducing a thin interfacial oxide layer offers a promising way toward the implementation of high-performance 2D TMD-based logic circuits. |
abstractGer |
The fermi-level pinning phenomenon, which occurs at the metal−semiconductor interface, not only obstructs the achievement of high-performance field effect transistors (FETs) but also results in poor long-term stability. This paper reports on the improvement in gate-bias stress stability in two-dimensional (2D) transition metal dichalcogenide (TMD) FETs with a titanium dioxide (TiO<sub<2</sub<) interfacial layer inserted between the 2D TMDs (MoS<sub<2</sub< or WS<sub<2</sub<) and metal electrodes. Compared to the control MoS<sub<2</sub<, the device without the TiO<sub<2</sub< layer, the TiO<sub<2</sub< interfacial layer deposited on 2D TMDs could lead to more effective carrier modulation by simply changing the contact metal, thereby improving the performance of the Schottky-barrier-modulated FET device. The TiO<sub<2</sub< layer could also suppress the Fermi-level pinning phenomenon usually fixed to the metal−semiconductor interface, resulting in an improvement in transistor performance. Especially, the introduction of the TiO<sub<2</sub< layer contributed to achieving stable device performance. Threshold voltage variation of MoS<sub<2</sub< and WS<sub<2</sub< FETs with the TiO<sub<2</sub< interfacial layer was ~2 V and ~3.6 V, respectively. The theoretical result of the density function theory validated that mid-gap energy states created within the bandgap of 2D MoS<sub<2</sub< can cause a doping effect. The simple approach of introducing a thin interfacial oxide layer offers a promising way toward the implementation of high-performance 2D TMD-based logic circuits. |
abstract_unstemmed |
The fermi-level pinning phenomenon, which occurs at the metal−semiconductor interface, not only obstructs the achievement of high-performance field effect transistors (FETs) but also results in poor long-term stability. This paper reports on the improvement in gate-bias stress stability in two-dimensional (2D) transition metal dichalcogenide (TMD) FETs with a titanium dioxide (TiO<sub<2</sub<) interfacial layer inserted between the 2D TMDs (MoS<sub<2</sub< or WS<sub<2</sub<) and metal electrodes. Compared to the control MoS<sub<2</sub<, the device without the TiO<sub<2</sub< layer, the TiO<sub<2</sub< interfacial layer deposited on 2D TMDs could lead to more effective carrier modulation by simply changing the contact metal, thereby improving the performance of the Schottky-barrier-modulated FET device. The TiO<sub<2</sub< layer could also suppress the Fermi-level pinning phenomenon usually fixed to the metal−semiconductor interface, resulting in an improvement in transistor performance. Especially, the introduction of the TiO<sub<2</sub< layer contributed to achieving stable device performance. Threshold voltage variation of MoS<sub<2</sub< and WS<sub<2</sub< FETs with the TiO<sub<2</sub< interfacial layer was ~2 V and ~3.6 V, respectively. The theoretical result of the density function theory validated that mid-gap energy states created within the bandgap of 2D MoS<sub<2</sub< can cause a doping effect. The simple approach of introducing a thin interfacial oxide layer offers a promising way toward the implementation of high-performance 2D TMD-based logic circuits. |
collection_details |
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container_issue |
8, p 1155 |
title_short |
Improvement of the Bias Stress Stability in 2D MoS<sub<2</sub< and WS<sub<2</sub< Transistors with a TiO<sub<2</sub< Interfacial Layer |
url |
https://doi.org/10.3390/nano9081155 https://doaj.org/article/a128063efd5145a09903c3de26755dbd https://www.mdpi.com/2079-4991/9/8/1155 https://doaj.org/toc/2079-4991 |
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author2 |
Yusin Pak Hye Yeon Jang Jae Hyeon Nam Tae Hyeon Kim Seyoung Oh Sung Mook Choi Yonghun Kim Byungjin Cho |
author2Str |
Yusin Pak Hye Yeon Jang Jae Hyeon Nam Tae Hyeon Kim Seyoung Oh Sung Mook Choi Yonghun Kim Byungjin Cho |
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doi_str |
10.3390/nano9081155 |
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up_date |
2024-07-03T19:16:45.427Z |
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