Phase Selectivity in Cr and N Co-Doped TiO<sub<2</sub< Films by Modulated Sputter Growth and Post-Deposition Flash-Lamp-Annealing
In this paper, we report on the phase selectivity in Cr and N co-doped TiO<sub<2</sub< (TiO<sub<2</sub<:Cr,N) sputtered films by means of interface engineering. In particular, monolithic TiO<sub<2</sub<:Cr,N films produced by continuous growth conditions result in...
Ausführliche Beschreibung
Autor*in: |
Raúl Gago [verfasserIn] Slawomir Prucnal [verfasserIn] René Hübner [verfasserIn] Frans Munnik [verfasserIn] David Esteban-Mendoza [verfasserIn] Ignacio Jiménez [verfasserIn] Javier Palomares [verfasserIn] |
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E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2019 |
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Übergeordnetes Werk: |
In: Coatings - MDPI AG, 2012, 9(2019), 7, p 448 |
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Übergeordnetes Werk: |
volume:9 ; year:2019 ; number:7, p 448 |
Links: |
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DOI / URN: |
10.3390/coatings9070448 |
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Katalog-ID: |
DOAJ056594755 |
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10.3390/coatings9070448 doi (DE-627)DOAJ056594755 (DE-599)DOAJ5adc4e4ab33546448a88ba81dc0206b8 DE-627 ger DE-627 rakwb eng TA1-2040 Raúl Gago verfasserin aut Phase Selectivity in Cr and N Co-Doped TiO<sub<2</sub< Films by Modulated Sputter Growth and Post-Deposition Flash-Lamp-Annealing 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, we report on the phase selectivity in Cr and N co-doped TiO<sub<2</sub< (TiO<sub<2</sub<:Cr,N) sputtered films by means of interface engineering. In particular, monolithic TiO<sub<2</sub<:Cr,N films produced by continuous growth conditions result in the formation of a mixed-phase oxide with dominant rutile character. On the contrary, modulated growth by starting with a single-phase anatase TiO<sub<2</sub<:N buffer layer, can be used to imprint the anatase structure to a subsequent TiO<sub<2</sub<:Cr,N layer. The robustness of the process with respect to the growth conditions has also been investigated, especially regarding the maximum Cr content (<5 at.%) for single-phase anatase formation. Furthermore, post-deposition flash-lamp-annealing (FLA) in modulated coatings was used to improve the as-grown anatase TiO<sub<2</sub<:Cr,N phase, as well as to induce dopant activation (N substitutional sites) and diffusion. In this way, Cr can be distributed through the whole film thickness from an initial modulated architecture while preserving the structural phase. Hence, the combination of interface engineering and millisecond-range-FLA opens new opportunities for tailoring the structure of TiO<sub<2</sub<-based functional materials. oxide materials doping sputter deposition modulated growth flash-lamp-annealing XANES Engineering (General). Civil engineering (General) Slawomir Prucnal verfasserin aut René Hübner verfasserin aut Frans Munnik verfasserin aut David Esteban-Mendoza verfasserin aut Ignacio Jiménez verfasserin aut Javier Palomares verfasserin aut In Coatings MDPI AG, 2012 9(2019), 7, p 448 (DE-627)718627636 (DE-600)2662314-6 20796412 nnns volume:9 year:2019 number:7, p 448 https://doi.org/10.3390/coatings9070448 kostenfrei https://doaj.org/article/5adc4e4ab33546448a88ba81dc0206b8 kostenfrei https://www.mdpi.com/2079-6412/9/7/448 kostenfrei https://doaj.org/toc/2079-6412 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 7, p 448 |
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10.3390/coatings9070448 doi (DE-627)DOAJ056594755 (DE-599)DOAJ5adc4e4ab33546448a88ba81dc0206b8 DE-627 ger DE-627 rakwb eng TA1-2040 Raúl Gago verfasserin aut Phase Selectivity in Cr and N Co-Doped TiO<sub<2</sub< Films by Modulated Sputter Growth and Post-Deposition Flash-Lamp-Annealing 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, we report on the phase selectivity in Cr and N co-doped TiO<sub<2</sub< (TiO<sub<2</sub<:Cr,N) sputtered films by means of interface engineering. In particular, monolithic TiO<sub<2</sub<:Cr,N films produced by continuous growth conditions result in the formation of a mixed-phase oxide with dominant rutile character. On the contrary, modulated growth by starting with a single-phase anatase TiO<sub<2</sub<:N buffer layer, can be used to imprint the anatase structure to a subsequent TiO<sub<2</sub<:Cr,N layer. The robustness of the process with respect to the growth conditions has also been investigated, especially regarding the maximum Cr content (<5 at.%) for single-phase anatase formation. Furthermore, post-deposition flash-lamp-annealing (FLA) in modulated coatings was used to improve the as-grown anatase TiO<sub<2</sub<:Cr,N phase, as well as to induce dopant activation (N substitutional sites) and diffusion. In this way, Cr can be distributed through the whole film thickness from an initial modulated architecture while preserving the structural phase. Hence, the combination of interface engineering and millisecond-range-FLA opens new opportunities for tailoring the structure of TiO<sub<2</sub<-based functional materials. oxide materials doping sputter deposition modulated growth flash-lamp-annealing XANES Engineering (General). Civil engineering (General) Slawomir Prucnal verfasserin aut René Hübner verfasserin aut Frans Munnik verfasserin aut David Esteban-Mendoza verfasserin aut Ignacio Jiménez verfasserin aut Javier Palomares verfasserin aut In Coatings MDPI AG, 2012 9(2019), 7, p 448 (DE-627)718627636 (DE-600)2662314-6 20796412 nnns volume:9 year:2019 number:7, p 448 https://doi.org/10.3390/coatings9070448 kostenfrei https://doaj.org/article/5adc4e4ab33546448a88ba81dc0206b8 kostenfrei https://www.mdpi.com/2079-6412/9/7/448 kostenfrei https://doaj.org/toc/2079-6412 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 7, p 448 |
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10.3390/coatings9070448 doi (DE-627)DOAJ056594755 (DE-599)DOAJ5adc4e4ab33546448a88ba81dc0206b8 DE-627 ger DE-627 rakwb eng TA1-2040 Raúl Gago verfasserin aut Phase Selectivity in Cr and N Co-Doped TiO<sub<2</sub< Films by Modulated Sputter Growth and Post-Deposition Flash-Lamp-Annealing 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, we report on the phase selectivity in Cr and N co-doped TiO<sub<2</sub< (TiO<sub<2</sub<:Cr,N) sputtered films by means of interface engineering. In particular, monolithic TiO<sub<2</sub<:Cr,N films produced by continuous growth conditions result in the formation of a mixed-phase oxide with dominant rutile character. On the contrary, modulated growth by starting with a single-phase anatase TiO<sub<2</sub<:N buffer layer, can be used to imprint the anatase structure to a subsequent TiO<sub<2</sub<:Cr,N layer. The robustness of the process with respect to the growth conditions has also been investigated, especially regarding the maximum Cr content (<5 at.%) for single-phase anatase formation. Furthermore, post-deposition flash-lamp-annealing (FLA) in modulated coatings was used to improve the as-grown anatase TiO<sub<2</sub<:Cr,N phase, as well as to induce dopant activation (N substitutional sites) and diffusion. In this way, Cr can be distributed through the whole film thickness from an initial modulated architecture while preserving the structural phase. Hence, the combination of interface engineering and millisecond-range-FLA opens new opportunities for tailoring the structure of TiO<sub<2</sub<-based functional materials. oxide materials doping sputter deposition modulated growth flash-lamp-annealing XANES Engineering (General). Civil engineering (General) Slawomir Prucnal verfasserin aut René Hübner verfasserin aut Frans Munnik verfasserin aut David Esteban-Mendoza verfasserin aut Ignacio Jiménez verfasserin aut Javier Palomares verfasserin aut In Coatings MDPI AG, 2012 9(2019), 7, p 448 (DE-627)718627636 (DE-600)2662314-6 20796412 nnns volume:9 year:2019 number:7, p 448 https://doi.org/10.3390/coatings9070448 kostenfrei https://doaj.org/article/5adc4e4ab33546448a88ba81dc0206b8 kostenfrei https://www.mdpi.com/2079-6412/9/7/448 kostenfrei https://doaj.org/toc/2079-6412 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 7, p 448 |
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10.3390/coatings9070448 doi (DE-627)DOAJ056594755 (DE-599)DOAJ5adc4e4ab33546448a88ba81dc0206b8 DE-627 ger DE-627 rakwb eng TA1-2040 Raúl Gago verfasserin aut Phase Selectivity in Cr and N Co-Doped TiO<sub<2</sub< Films by Modulated Sputter Growth and Post-Deposition Flash-Lamp-Annealing 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, we report on the phase selectivity in Cr and N co-doped TiO<sub<2</sub< (TiO<sub<2</sub<:Cr,N) sputtered films by means of interface engineering. In particular, monolithic TiO<sub<2</sub<:Cr,N films produced by continuous growth conditions result in the formation of a mixed-phase oxide with dominant rutile character. On the contrary, modulated growth by starting with a single-phase anatase TiO<sub<2</sub<:N buffer layer, can be used to imprint the anatase structure to a subsequent TiO<sub<2</sub<:Cr,N layer. The robustness of the process with respect to the growth conditions has also been investigated, especially regarding the maximum Cr content (<5 at.%) for single-phase anatase formation. Furthermore, post-deposition flash-lamp-annealing (FLA) in modulated coatings was used to improve the as-grown anatase TiO<sub<2</sub<:Cr,N phase, as well as to induce dopant activation (N substitutional sites) and diffusion. In this way, Cr can be distributed through the whole film thickness from an initial modulated architecture while preserving the structural phase. Hence, the combination of interface engineering and millisecond-range-FLA opens new opportunities for tailoring the structure of TiO<sub<2</sub<-based functional materials. oxide materials doping sputter deposition modulated growth flash-lamp-annealing XANES Engineering (General). Civil engineering (General) Slawomir Prucnal verfasserin aut René Hübner verfasserin aut Frans Munnik verfasserin aut David Esteban-Mendoza verfasserin aut Ignacio Jiménez verfasserin aut Javier Palomares verfasserin aut In Coatings MDPI AG, 2012 9(2019), 7, p 448 (DE-627)718627636 (DE-600)2662314-6 20796412 nnns volume:9 year:2019 number:7, p 448 https://doi.org/10.3390/coatings9070448 kostenfrei https://doaj.org/article/5adc4e4ab33546448a88ba81dc0206b8 kostenfrei https://www.mdpi.com/2079-6412/9/7/448 kostenfrei https://doaj.org/toc/2079-6412 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 7, p 448 |
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10.3390/coatings9070448 doi (DE-627)DOAJ056594755 (DE-599)DOAJ5adc4e4ab33546448a88ba81dc0206b8 DE-627 ger DE-627 rakwb eng TA1-2040 Raúl Gago verfasserin aut Phase Selectivity in Cr and N Co-Doped TiO<sub<2</sub< Films by Modulated Sputter Growth and Post-Deposition Flash-Lamp-Annealing 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, we report on the phase selectivity in Cr and N co-doped TiO<sub<2</sub< (TiO<sub<2</sub<:Cr,N) sputtered films by means of interface engineering. In particular, monolithic TiO<sub<2</sub<:Cr,N films produced by continuous growth conditions result in the formation of a mixed-phase oxide with dominant rutile character. On the contrary, modulated growth by starting with a single-phase anatase TiO<sub<2</sub<:N buffer layer, can be used to imprint the anatase structure to a subsequent TiO<sub<2</sub<:Cr,N layer. The robustness of the process with respect to the growth conditions has also been investigated, especially regarding the maximum Cr content (<5 at.%) for single-phase anatase formation. Furthermore, post-deposition flash-lamp-annealing (FLA) in modulated coatings was used to improve the as-grown anatase TiO<sub<2</sub<:Cr,N phase, as well as to induce dopant activation (N substitutional sites) and diffusion. In this way, Cr can be distributed through the whole film thickness from an initial modulated architecture while preserving the structural phase. Hence, the combination of interface engineering and millisecond-range-FLA opens new opportunities for tailoring the structure of TiO<sub<2</sub<-based functional materials. oxide materials doping sputter deposition modulated growth flash-lamp-annealing XANES Engineering (General). Civil engineering (General) Slawomir Prucnal verfasserin aut René Hübner verfasserin aut Frans Munnik verfasserin aut David Esteban-Mendoza verfasserin aut Ignacio Jiménez verfasserin aut Javier Palomares verfasserin aut In Coatings MDPI AG, 2012 9(2019), 7, p 448 (DE-627)718627636 (DE-600)2662314-6 20796412 nnns volume:9 year:2019 number:7, p 448 https://doi.org/10.3390/coatings9070448 kostenfrei https://doaj.org/article/5adc4e4ab33546448a88ba81dc0206b8 kostenfrei https://www.mdpi.com/2079-6412/9/7/448 kostenfrei https://doaj.org/toc/2079-6412 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 7, p 448 |
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Phase Selectivity in Cr and N Co-Doped TiO<sub<2</sub< Films by Modulated Sputter Growth and Post-Deposition Flash-Lamp-Annealing |
abstract |
In this paper, we report on the phase selectivity in Cr and N co-doped TiO<sub<2</sub< (TiO<sub<2</sub<:Cr,N) sputtered films by means of interface engineering. In particular, monolithic TiO<sub<2</sub<:Cr,N films produced by continuous growth conditions result in the formation of a mixed-phase oxide with dominant rutile character. On the contrary, modulated growth by starting with a single-phase anatase TiO<sub<2</sub<:N buffer layer, can be used to imprint the anatase structure to a subsequent TiO<sub<2</sub<:Cr,N layer. The robustness of the process with respect to the growth conditions has also been investigated, especially regarding the maximum Cr content (<5 at.%) for single-phase anatase formation. Furthermore, post-deposition flash-lamp-annealing (FLA) in modulated coatings was used to improve the as-grown anatase TiO<sub<2</sub<:Cr,N phase, as well as to induce dopant activation (N substitutional sites) and diffusion. In this way, Cr can be distributed through the whole film thickness from an initial modulated architecture while preserving the structural phase. Hence, the combination of interface engineering and millisecond-range-FLA opens new opportunities for tailoring the structure of TiO<sub<2</sub<-based functional materials. |
abstractGer |
In this paper, we report on the phase selectivity in Cr and N co-doped TiO<sub<2</sub< (TiO<sub<2</sub<:Cr,N) sputtered films by means of interface engineering. In particular, monolithic TiO<sub<2</sub<:Cr,N films produced by continuous growth conditions result in the formation of a mixed-phase oxide with dominant rutile character. On the contrary, modulated growth by starting with a single-phase anatase TiO<sub<2</sub<:N buffer layer, can be used to imprint the anatase structure to a subsequent TiO<sub<2</sub<:Cr,N layer. The robustness of the process with respect to the growth conditions has also been investigated, especially regarding the maximum Cr content (<5 at.%) for single-phase anatase formation. Furthermore, post-deposition flash-lamp-annealing (FLA) in modulated coatings was used to improve the as-grown anatase TiO<sub<2</sub<:Cr,N phase, as well as to induce dopant activation (N substitutional sites) and diffusion. In this way, Cr can be distributed through the whole film thickness from an initial modulated architecture while preserving the structural phase. Hence, the combination of interface engineering and millisecond-range-FLA opens new opportunities for tailoring the structure of TiO<sub<2</sub<-based functional materials. |
abstract_unstemmed |
In this paper, we report on the phase selectivity in Cr and N co-doped TiO<sub<2</sub< (TiO<sub<2</sub<:Cr,N) sputtered films by means of interface engineering. In particular, monolithic TiO<sub<2</sub<:Cr,N films produced by continuous growth conditions result in the formation of a mixed-phase oxide with dominant rutile character. On the contrary, modulated growth by starting with a single-phase anatase TiO<sub<2</sub<:N buffer layer, can be used to imprint the anatase structure to a subsequent TiO<sub<2</sub<:Cr,N layer. The robustness of the process with respect to the growth conditions has also been investigated, especially regarding the maximum Cr content (<5 at.%) for single-phase anatase formation. Furthermore, post-deposition flash-lamp-annealing (FLA) in modulated coatings was used to improve the as-grown anatase TiO<sub<2</sub<:Cr,N phase, as well as to induce dopant activation (N substitutional sites) and diffusion. In this way, Cr can be distributed through the whole film thickness from an initial modulated architecture while preserving the structural phase. Hence, the combination of interface engineering and millisecond-range-FLA opens new opportunities for tailoring the structure of TiO<sub<2</sub<-based functional materials. |
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