Phase Selectivity in Cr and N Co-Doped TiO<sub<2</sub< Films by Modulated Sputter Growth and Post-Deposition Flash-Lamp-Annealing

In this paper, we report on the phase selectivity in Cr and N co-doped TiO<sub<2</sub< (TiO<sub<2</sub<:Cr,N) sputtered films by means of interface engineering. In particular, monolithic TiO<sub<2</sub<:Cr,N films produced by continuous growth conditions result in...
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Gespeichert in:

Autor*in:	Raúl Gago [verfasserIn] Slawomir Prucnal [verfasserIn] René Hübner [verfasserIn] Frans Munnik [verfasserIn] David Esteban-Mendoza [verfasserIn] Ignacio Jiménez [verfasserIn] Javier Palomares [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2019

Schlagwörter:	oxide materials doping sputter deposition modulated growth flash-lamp-annealing XANES

Übergeordnetes Werk:	In: Coatings - MDPI AG, 2012, 9(2019), 7, p 448
Übergeordnetes Werk:	volume:9 ; year:2019 ; number:7, p 448

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/coatings9070448

Katalog-ID:	DOAJ056594755

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allfieldsSound	10.3390/coatings9070448 doi (DE-627)DOAJ056594755 (DE-599)DOAJ5adc4e4ab33546448a88ba81dc0206b8 DE-627 ger DE-627 rakwb eng TA1-2040 Raúl Gago verfasserin aut Phase Selectivity in Cr and N Co-Doped TiO<sub<2</sub< Films by Modulated Sputter Growth and Post-Deposition Flash-Lamp-Annealing 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, we report on the phase selectivity in Cr and N co-doped TiO<sub<2</sub< (TiO<sub<2</sub<:Cr,N) sputtered films by means of interface engineering. In particular, monolithic TiO<sub<2</sub<:Cr,N films produced by continuous growth conditions result in the formation of a mixed-phase oxide with dominant rutile character. On the contrary, modulated growth by starting with a single-phase anatase TiO<sub<2</sub<:N buffer layer, can be used to imprint the anatase structure to a subsequent TiO<sub<2</sub<:Cr,N layer. The robustness of the process with respect to the growth conditions has also been investigated, especially regarding the maximum Cr content (<5 at.%) for single-phase anatase formation. Furthermore, post-deposition flash-lamp-annealing (FLA) in modulated coatings was used to improve the as-grown anatase TiO<sub<2</sub<:Cr,N phase, as well as to induce dopant activation (N substitutional sites) and diffusion. In this way, Cr can be distributed through the whole film thickness from an initial modulated architecture while preserving the structural phase. Hence, the combination of interface engineering and millisecond-range-FLA opens new opportunities for tailoring the structure of TiO<sub<2</sub<-based functional materials. oxide materials doping sputter deposition modulated growth flash-lamp-annealing XANES Engineering (General). Civil engineering (General) Slawomir Prucnal verfasserin aut René Hübner verfasserin aut Frans Munnik verfasserin aut David Esteban-Mendoza verfasserin aut Ignacio Jiménez verfasserin aut Javier Palomares verfasserin aut In Coatings MDPI AG, 2012 9(2019), 7, p 448 (DE-627)718627636 (DE-600)2662314-6 20796412 nnns volume:9 year:2019 number:7, p 448 https://doi.org/10.3390/coatings9070448 kostenfrei https://doaj.org/article/5adc4e4ab33546448a88ba81dc0206b8 kostenfrei https://www.mdpi.com/2079-6412/9/7/448 kostenfrei https://doaj.org/toc/2079-6412 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2019 7, p 448
language	English
source	In Coatings 9(2019), 7, p 448 volume:9 year:2019 number:7, p 448
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authorswithroles_txt_mv	Raúl Gago @@aut@@ Slawomir Prucnal @@aut@@ René Hübner @@aut@@ Frans Munnik @@aut@@ David Esteban-Mendoza @@aut@@ Ignacio Jiménez @@aut@@ Javier Palomares @@aut@@
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callnumber-first	T - Technology
author	Raúl Gago
spellingShingle	Raúl Gago misc TA1-2040 misc oxide materials misc doping misc sputter deposition misc modulated growth misc flash-lamp-annealing misc XANES misc Engineering (General). Civil engineering (General) Phase Selectivity in Cr and N Co-Doped TiO<sub<2</sub< Films by Modulated Sputter Growth and Post-Deposition Flash-Lamp-Annealing
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topic_title	TA1-2040 Phase Selectivity in Cr and N Co-Doped TiO<sub<2</sub< Films by Modulated Sputter Growth and Post-Deposition Flash-Lamp-Annealing oxide materials doping sputter deposition modulated growth flash-lamp-annealing XANES
topic	misc TA1-2040 misc oxide materials misc doping misc sputter deposition misc modulated growth misc flash-lamp-annealing misc XANES misc Engineering (General). Civil engineering (General)
topic_unstemmed	misc TA1-2040 misc oxide materials misc doping misc sputter deposition misc modulated growth misc flash-lamp-annealing misc XANES misc Engineering (General). Civil engineering (General)
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title	Phase Selectivity in Cr and N Co-Doped TiO<sub<2</sub< Films by Modulated Sputter Growth and Post-Deposition Flash-Lamp-Annealing
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title_full	Phase Selectivity in Cr and N Co-Doped TiO<sub<2</sub< Films by Modulated Sputter Growth and Post-Deposition Flash-Lamp-Annealing
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author_browse	Raúl Gago Slawomir Prucnal René Hübner Frans Munnik David Esteban-Mendoza Ignacio Jiménez Javier Palomares
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title_sort	phase selectivity in cr and n co-doped tio<sub<2</sub< films by modulated sputter growth and post-deposition flash-lamp-annealing
callnumber	TA1-2040
title_auth	Phase Selectivity in Cr and N Co-Doped TiO<sub<2</sub< Films by Modulated Sputter Growth and Post-Deposition Flash-Lamp-Annealing
abstract	In this paper, we report on the phase selectivity in Cr and N co-doped TiO<sub<2</sub< (TiO<sub<2</sub<:Cr,N) sputtered films by means of interface engineering. In particular, monolithic TiO<sub<2</sub<:Cr,N films produced by continuous growth conditions result in the formation of a mixed-phase oxide with dominant rutile character. On the contrary, modulated growth by starting with a single-phase anatase TiO<sub<2</sub<:N buffer layer, can be used to imprint the anatase structure to a subsequent TiO<sub<2</sub<:Cr,N layer. The robustness of the process with respect to the growth conditions has also been investigated, especially regarding the maximum Cr content (<5 at.%) for single-phase anatase formation. Furthermore, post-deposition flash-lamp-annealing (FLA) in modulated coatings was used to improve the as-grown anatase TiO<sub<2</sub<:Cr,N phase, as well as to induce dopant activation (N substitutional sites) and diffusion. In this way, Cr can be distributed through the whole film thickness from an initial modulated architecture while preserving the structural phase. Hence, the combination of interface engineering and millisecond-range-FLA opens new opportunities for tailoring the structure of TiO<sub<2</sub<-based functional materials.
abstractGer	In this paper, we report on the phase selectivity in Cr and N co-doped TiO<sub<2</sub< (TiO<sub<2</sub<:Cr,N) sputtered films by means of interface engineering. In particular, monolithic TiO<sub<2</sub<:Cr,N films produced by continuous growth conditions result in the formation of a mixed-phase oxide with dominant rutile character. On the contrary, modulated growth by starting with a single-phase anatase TiO<sub<2</sub<:N buffer layer, can be used to imprint the anatase structure to a subsequent TiO<sub<2</sub<:Cr,N layer. The robustness of the process with respect to the growth conditions has also been investigated, especially regarding the maximum Cr content (<5 at.%) for single-phase anatase formation. Furthermore, post-deposition flash-lamp-annealing (FLA) in modulated coatings was used to improve the as-grown anatase TiO<sub<2</sub<:Cr,N phase, as well as to induce dopant activation (N substitutional sites) and diffusion. In this way, Cr can be distributed through the whole film thickness from an initial modulated architecture while preserving the structural phase. Hence, the combination of interface engineering and millisecond-range-FLA opens new opportunities for tailoring the structure of TiO<sub<2</sub<-based functional materials.
abstract_unstemmed	In this paper, we report on the phase selectivity in Cr and N co-doped TiO<sub<2</sub< (TiO<sub<2</sub<:Cr,N) sputtered films by means of interface engineering. In particular, monolithic TiO<sub<2</sub<:Cr,N films produced by continuous growth conditions result in the formation of a mixed-phase oxide with dominant rutile character. On the contrary, modulated growth by starting with a single-phase anatase TiO<sub<2</sub<:N buffer layer, can be used to imprint the anatase structure to a subsequent TiO<sub<2</sub<:Cr,N layer. The robustness of the process with respect to the growth conditions has also been investigated, especially regarding the maximum Cr content (<5 at.%) for single-phase anatase formation. Furthermore, post-deposition flash-lamp-annealing (FLA) in modulated coatings was used to improve the as-grown anatase TiO<sub<2</sub<:Cr,N phase, as well as to induce dopant activation (N substitutional sites) and diffusion. In this way, Cr can be distributed through the whole film thickness from an initial modulated architecture while preserving the structural phase. Hence, the combination of interface engineering and millisecond-range-FLA opens new opportunities for tailoring the structure of TiO<sub<2</sub<-based functional materials.
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container_issue	7, p 448
title_short	Phase Selectivity in Cr and N Co-Doped TiO<sub<2</sub< Films by Modulated Sputter Growth and Post-Deposition Flash-Lamp-Annealing
url	https://doi.org/10.3390/coatings9070448 https://doaj.org/article/5adc4e4ab33546448a88ba81dc0206b8 https://www.mdpi.com/2079-6412/9/7/448 https://doaj.org/toc/2079-6412
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author2	Slawomir Prucnal René Hübner Frans Munnik David Esteban-Mendoza Ignacio Jiménez Javier Palomares
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up_date	2024-07-03T21:46:45.935Z
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