Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor

Abstract In this paper, a silicon-based T-shape gate dual-source tunnel field-effect transistor (TGTFET) is proposed and investigated by TCAD simulation. As a contrastive study, the structure, characteristic, and analog/RF performance of TGTFET, LTFET, and UTFET are discussed. The gate overlap intro...
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Autor*in:	Shupeng Chen [verfasserIn] Hongxia Liu [verfasserIn] Shulong Wang [verfasserIn] Wei Li [verfasserIn] Xing Wang [verfasserIn] Lu Zhao [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2018

Schlagwörter:	T-shaped gate Recessed gate Tunnel field-effect transistor (TFET) Analog/RF performance

Übergeordnetes Werk:	In: Nanoscale Research Letters - SpringerOpen, 2007, 13(2018), 1, Seite 13
Übergeordnetes Werk:	volume:13 ; year:2018 ; number:1 ; pages:13

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc Journal toc

DOI / URN:	10.1186/s11671-018-2723-y

Katalog-ID:	DOAJ056921314

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520			\|a Abstract In this paper, a silicon-based T-shape gate dual-source tunnel field-effect transistor (TGTFET) is proposed and investigated by TCAD simulation. As a contrastive study, the structure, characteristic, and analog/RF performance of TGTFET, LTFET, and UTFET are discussed. The gate overlap introduced by T-shape gate can enhance the efficiency of tunneling junction. The dual-source regions in TGTFET can increase the on-state current (I ON) by offering a doubled tunneling junction area. In order to further improve the device performance, the n+ pocket is introduced in TGTFET to further increase the band-to-band tunneling rate. Simulation results reveal that the TGTFET’s I ON and switching ratio (I ON/I OFF) reach 81 μA/μm and 6.7 × 1010 at 1 V gate to source voltage (V g). The average subthreshold swing of TGTFET (SSavg, from 0 to 0.5 V V g) reaches 51.5 mV/dec, and the minimum subthreshold swing of TGTFET (SSmin, at 0.1 V V g) reaches 24.4 mV/dec. Moreover, it is found that TGTFET have strong robustness on drain-induced barrier lowering (DIBL) effect. The effects of doping concentration, geometric dimension, and applied voltage on device performance are investigated in order to create the TGTFET design guideline. Furthermore, the transconductance (g m), output conductance (g ds), gate to source capacitance (C gs), gate to drain capacitance (C gd), cut-off frequency (f T), and gain bandwidth (GBW) of TGTFET reach 232 μS/μm, 214 μS/μm, 0.7 fF/μm, 3.7 fF/μm, 11.9 GHz, and 2.3 GHz at 0.5 V drain to source voltage (V d), respectively. Benefiting from the structural advantage, TGTFET obtains better DC/AC characteristics compared to UTFET and LTFET. In conclusion, the considerable good performance makes TGTFET turn into a very attractive choice for the next generation of low-power and analog/RF applications.
650		4	\|a T-shaped gate
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author_variant	s c sc h l hl s w sw w l wl x w xw l z lz
matchkey_str	article:1556276X:2018----::nlgfefracothpgtdasuctnefe
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allfields	10.1186/s11671-018-2723-y doi (DE-627)DOAJ056921314 (DE-599)DOAJ01aa97af94744181973741da2958f576 DE-627 ger DE-627 rakwb eng TA401-492 Shupeng Chen verfasserin aut Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this paper, a silicon-based T-shape gate dual-source tunnel field-effect transistor (TGTFET) is proposed and investigated by TCAD simulation. As a contrastive study, the structure, characteristic, and analog/RF performance of TGTFET, LTFET, and UTFET are discussed. The gate overlap introduced by T-shape gate can enhance the efficiency of tunneling junction. The dual-source regions in TGTFET can increase the on-state current (I ON) by offering a doubled tunneling junction area. In order to further improve the device performance, the n+ pocket is introduced in TGTFET to further increase the band-to-band tunneling rate. Simulation results reveal that the TGTFET’s I ON and switching ratio (I ON/I OFF) reach 81 μA/μm and 6.7 × 1010 at 1 V gate to source voltage (V g). The average subthreshold swing of TGTFET (SSavg, from 0 to 0.5 V V g) reaches 51.5 mV/dec, and the minimum subthreshold swing of TGTFET (SSmin, at 0.1 V V g) reaches 24.4 mV/dec. Moreover, it is found that TGTFET have strong robustness on drain-induced barrier lowering (DIBL) effect. The effects of doping concentration, geometric dimension, and applied voltage on device performance are investigated in order to create the TGTFET design guideline. Furthermore, the transconductance (g m), output conductance (g ds), gate to source capacitance (C gs), gate to drain capacitance (C gd), cut-off frequency (f T), and gain bandwidth (GBW) of TGTFET reach 232 μS/μm, 214 μS/μm, 0.7 fF/μm, 3.7 fF/μm, 11.9 GHz, and 2.3 GHz at 0.5 V drain to source voltage (V d), respectively. Benefiting from the structural advantage, TGTFET obtains better DC/AC characteristics compared to UTFET and LTFET. In conclusion, the considerable good performance makes TGTFET turn into a very attractive choice for the next generation of low-power and analog/RF applications. T-shaped gate Recessed gate Tunnel field-effect transistor (TFET) Analog/RF performance Materials of engineering and construction. Mechanics of materials Hongxia Liu verfasserin aut Shulong Wang verfasserin aut Wei Li verfasserin aut Xing Wang verfasserin aut Lu Zhao verfasserin aut In Nanoscale Research Letters SpringerOpen, 2007 13(2018), 1, Seite 13 (DE-627)518632474 (DE-600)2253244-4 1556276X nnns volume:13 year:2018 number:1 pages:13 https://doi.org/10.1186/s11671-018-2723-y kostenfrei https://doaj.org/article/01aa97af94744181973741da2958f576 kostenfrei http://link.springer.com/article/10.1186/s11671-018-2723-y kostenfrei https://doaj.org/toc/1931-7573 Journal toc kostenfrei https://doaj.org/toc/1556-276X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2018 1 13
spelling	10.1186/s11671-018-2723-y doi (DE-627)DOAJ056921314 (DE-599)DOAJ01aa97af94744181973741da2958f576 DE-627 ger DE-627 rakwb eng TA401-492 Shupeng Chen verfasserin aut Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this paper, a silicon-based T-shape gate dual-source tunnel field-effect transistor (TGTFET) is proposed and investigated by TCAD simulation. As a contrastive study, the structure, characteristic, and analog/RF performance of TGTFET, LTFET, and UTFET are discussed. The gate overlap introduced by T-shape gate can enhance the efficiency of tunneling junction. The dual-source regions in TGTFET can increase the on-state current (I ON) by offering a doubled tunneling junction area. In order to further improve the device performance, the n+ pocket is introduced in TGTFET to further increase the band-to-band tunneling rate. Simulation results reveal that the TGTFET’s I ON and switching ratio (I ON/I OFF) reach 81 μA/μm and 6.7 × 1010 at 1 V gate to source voltage (V g). The average subthreshold swing of TGTFET (SSavg, from 0 to 0.5 V V g) reaches 51.5 mV/dec, and the minimum subthreshold swing of TGTFET (SSmin, at 0.1 V V g) reaches 24.4 mV/dec. Moreover, it is found that TGTFET have strong robustness on drain-induced barrier lowering (DIBL) effect. The effects of doping concentration, geometric dimension, and applied voltage on device performance are investigated in order to create the TGTFET design guideline. Furthermore, the transconductance (g m), output conductance (g ds), gate to source capacitance (C gs), gate to drain capacitance (C gd), cut-off frequency (f T), and gain bandwidth (GBW) of TGTFET reach 232 μS/μm, 214 μS/μm, 0.7 fF/μm, 3.7 fF/μm, 11.9 GHz, and 2.3 GHz at 0.5 V drain to source voltage (V d), respectively. Benefiting from the structural advantage, TGTFET obtains better DC/AC characteristics compared to UTFET and LTFET. In conclusion, the considerable good performance makes TGTFET turn into a very attractive choice for the next generation of low-power and analog/RF applications. T-shaped gate Recessed gate Tunnel field-effect transistor (TFET) Analog/RF performance Materials of engineering and construction. Mechanics of materials Hongxia Liu verfasserin aut Shulong Wang verfasserin aut Wei Li verfasserin aut Xing Wang verfasserin aut Lu Zhao verfasserin aut In Nanoscale Research Letters SpringerOpen, 2007 13(2018), 1, Seite 13 (DE-627)518632474 (DE-600)2253244-4 1556276X nnns volume:13 year:2018 number:1 pages:13 https://doi.org/10.1186/s11671-018-2723-y kostenfrei https://doaj.org/article/01aa97af94744181973741da2958f576 kostenfrei http://link.springer.com/article/10.1186/s11671-018-2723-y kostenfrei https://doaj.org/toc/1931-7573 Journal toc kostenfrei https://doaj.org/toc/1556-276X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2018 1 13
allfields_unstemmed	10.1186/s11671-018-2723-y doi (DE-627)DOAJ056921314 (DE-599)DOAJ01aa97af94744181973741da2958f576 DE-627 ger DE-627 rakwb eng TA401-492 Shupeng Chen verfasserin aut Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this paper, a silicon-based T-shape gate dual-source tunnel field-effect transistor (TGTFET) is proposed and investigated by TCAD simulation. As a contrastive study, the structure, characteristic, and analog/RF performance of TGTFET, LTFET, and UTFET are discussed. The gate overlap introduced by T-shape gate can enhance the efficiency of tunneling junction. The dual-source regions in TGTFET can increase the on-state current (I ON) by offering a doubled tunneling junction area. In order to further improve the device performance, the n+ pocket is introduced in TGTFET to further increase the band-to-band tunneling rate. Simulation results reveal that the TGTFET’s I ON and switching ratio (I ON/I OFF) reach 81 μA/μm and 6.7 × 1010 at 1 V gate to source voltage (V g). The average subthreshold swing of TGTFET (SSavg, from 0 to 0.5 V V g) reaches 51.5 mV/dec, and the minimum subthreshold swing of TGTFET (SSmin, at 0.1 V V g) reaches 24.4 mV/dec. Moreover, it is found that TGTFET have strong robustness on drain-induced barrier lowering (DIBL) effect. The effects of doping concentration, geometric dimension, and applied voltage on device performance are investigated in order to create the TGTFET design guideline. Furthermore, the transconductance (g m), output conductance (g ds), gate to source capacitance (C gs), gate to drain capacitance (C gd), cut-off frequency (f T), and gain bandwidth (GBW) of TGTFET reach 232 μS/μm, 214 μS/μm, 0.7 fF/μm, 3.7 fF/μm, 11.9 GHz, and 2.3 GHz at 0.5 V drain to source voltage (V d), respectively. Benefiting from the structural advantage, TGTFET obtains better DC/AC characteristics compared to UTFET and LTFET. In conclusion, the considerable good performance makes TGTFET turn into a very attractive choice for the next generation of low-power and analog/RF applications. T-shaped gate Recessed gate Tunnel field-effect transistor (TFET) Analog/RF performance Materials of engineering and construction. Mechanics of materials Hongxia Liu verfasserin aut Shulong Wang verfasserin aut Wei Li verfasserin aut Xing Wang verfasserin aut Lu Zhao verfasserin aut In Nanoscale Research Letters SpringerOpen, 2007 13(2018), 1, Seite 13 (DE-627)518632474 (DE-600)2253244-4 1556276X nnns volume:13 year:2018 number:1 pages:13 https://doi.org/10.1186/s11671-018-2723-y kostenfrei https://doaj.org/article/01aa97af94744181973741da2958f576 kostenfrei http://link.springer.com/article/10.1186/s11671-018-2723-y kostenfrei https://doaj.org/toc/1931-7573 Journal toc kostenfrei https://doaj.org/toc/1556-276X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2018 1 13
allfieldsGer	10.1186/s11671-018-2723-y doi (DE-627)DOAJ056921314 (DE-599)DOAJ01aa97af94744181973741da2958f576 DE-627 ger DE-627 rakwb eng TA401-492 Shupeng Chen verfasserin aut Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this paper, a silicon-based T-shape gate dual-source tunnel field-effect transistor (TGTFET) is proposed and investigated by TCAD simulation. As a contrastive study, the structure, characteristic, and analog/RF performance of TGTFET, LTFET, and UTFET are discussed. The gate overlap introduced by T-shape gate can enhance the efficiency of tunneling junction. The dual-source regions in TGTFET can increase the on-state current (I ON) by offering a doubled tunneling junction area. In order to further improve the device performance, the n+ pocket is introduced in TGTFET to further increase the band-to-band tunneling rate. Simulation results reveal that the TGTFET’s I ON and switching ratio (I ON/I OFF) reach 81 μA/μm and 6.7 × 1010 at 1 V gate to source voltage (V g). The average subthreshold swing of TGTFET (SSavg, from 0 to 0.5 V V g) reaches 51.5 mV/dec, and the minimum subthreshold swing of TGTFET (SSmin, at 0.1 V V g) reaches 24.4 mV/dec. Moreover, it is found that TGTFET have strong robustness on drain-induced barrier lowering (DIBL) effect. The effects of doping concentration, geometric dimension, and applied voltage on device performance are investigated in order to create the TGTFET design guideline. Furthermore, the transconductance (g m), output conductance (g ds), gate to source capacitance (C gs), gate to drain capacitance (C gd), cut-off frequency (f T), and gain bandwidth (GBW) of TGTFET reach 232 μS/μm, 214 μS/μm, 0.7 fF/μm, 3.7 fF/μm, 11.9 GHz, and 2.3 GHz at 0.5 V drain to source voltage (V d), respectively. Benefiting from the structural advantage, TGTFET obtains better DC/AC characteristics compared to UTFET and LTFET. In conclusion, the considerable good performance makes TGTFET turn into a very attractive choice for the next generation of low-power and analog/RF applications. T-shaped gate Recessed gate Tunnel field-effect transistor (TFET) Analog/RF performance Materials of engineering and construction. Mechanics of materials Hongxia Liu verfasserin aut Shulong Wang verfasserin aut Wei Li verfasserin aut Xing Wang verfasserin aut Lu Zhao verfasserin aut In Nanoscale Research Letters SpringerOpen, 2007 13(2018), 1, Seite 13 (DE-627)518632474 (DE-600)2253244-4 1556276X nnns volume:13 year:2018 number:1 pages:13 https://doi.org/10.1186/s11671-018-2723-y kostenfrei https://doaj.org/article/01aa97af94744181973741da2958f576 kostenfrei http://link.springer.com/article/10.1186/s11671-018-2723-y kostenfrei https://doaj.org/toc/1931-7573 Journal toc kostenfrei https://doaj.org/toc/1556-276X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2018 1 13
allfieldsSound	10.1186/s11671-018-2723-y doi (DE-627)DOAJ056921314 (DE-599)DOAJ01aa97af94744181973741da2958f576 DE-627 ger DE-627 rakwb eng TA401-492 Shupeng Chen verfasserin aut Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this paper, a silicon-based T-shape gate dual-source tunnel field-effect transistor (TGTFET) is proposed and investigated by TCAD simulation. As a contrastive study, the structure, characteristic, and analog/RF performance of TGTFET, LTFET, and UTFET are discussed. The gate overlap introduced by T-shape gate can enhance the efficiency of tunneling junction. The dual-source regions in TGTFET can increase the on-state current (I ON) by offering a doubled tunneling junction area. In order to further improve the device performance, the n+ pocket is introduced in TGTFET to further increase the band-to-band tunneling rate. Simulation results reveal that the TGTFET’s I ON and switching ratio (I ON/I OFF) reach 81 μA/μm and 6.7 × 1010 at 1 V gate to source voltage (V g). The average subthreshold swing of TGTFET (SSavg, from 0 to 0.5 V V g) reaches 51.5 mV/dec, and the minimum subthreshold swing of TGTFET (SSmin, at 0.1 V V g) reaches 24.4 mV/dec. Moreover, it is found that TGTFET have strong robustness on drain-induced barrier lowering (DIBL) effect. The effects of doping concentration, geometric dimension, and applied voltage on device performance are investigated in order to create the TGTFET design guideline. Furthermore, the transconductance (g m), output conductance (g ds), gate to source capacitance (C gs), gate to drain capacitance (C gd), cut-off frequency (f T), and gain bandwidth (GBW) of TGTFET reach 232 μS/μm, 214 μS/μm, 0.7 fF/μm, 3.7 fF/μm, 11.9 GHz, and 2.3 GHz at 0.5 V drain to source voltage (V d), respectively. Benefiting from the structural advantage, TGTFET obtains better DC/AC characteristics compared to UTFET and LTFET. In conclusion, the considerable good performance makes TGTFET turn into a very attractive choice for the next generation of low-power and analog/RF applications. T-shaped gate Recessed gate Tunnel field-effect transistor (TFET) Analog/RF performance Materials of engineering and construction. Mechanics of materials Hongxia Liu verfasserin aut Shulong Wang verfasserin aut Wei Li verfasserin aut Xing Wang verfasserin aut Lu Zhao verfasserin aut In Nanoscale Research Letters SpringerOpen, 2007 13(2018), 1, Seite 13 (DE-627)518632474 (DE-600)2253244-4 1556276X nnns volume:13 year:2018 number:1 pages:13 https://doi.org/10.1186/s11671-018-2723-y kostenfrei https://doaj.org/article/01aa97af94744181973741da2958f576 kostenfrei http://link.springer.com/article/10.1186/s11671-018-2723-y kostenfrei https://doaj.org/toc/1931-7573 Journal toc kostenfrei https://doaj.org/toc/1556-276X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2018 1 13
language	English
source	In Nanoscale Research Letters 13(2018), 1, Seite 13 volume:13 year:2018 number:1 pages:13
sourceStr	In Nanoscale Research Letters 13(2018), 1, Seite 13 volume:13 year:2018 number:1 pages:13
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	T-shaped gate Recessed gate Tunnel field-effect transistor (TFET) Analog/RF performance Materials of engineering and construction. Mechanics of materials
isfreeaccess_bool	true
container_title	Nanoscale Research Letters
authorswithroles_txt_mv	Shupeng Chen @@aut@@ Hongxia Liu @@aut@@ Shulong Wang @@aut@@ Wei Li @@aut@@ Xing Wang @@aut@@ Lu Zhao @@aut@@
publishDateDaySort_date	2018-01-01T00:00:00Z
hierarchy_top_id	518632474
id	DOAJ056921314
language_de	englisch
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The effects of doping concentration, geometric dimension, and applied voltage on device performance are investigated in order to create the TGTFET design guideline. Furthermore, the transconductance (g m), output conductance (g ds), gate to source capacitance (C gs), gate to drain capacitance (C gd), cut-off frequency (f T), and gain bandwidth (GBW) of TGTFET reach 232 μS/μm, 214 μS/μm, 0.7 fF/μm, 3.7 fF/μm, 11.9 GHz, and 2.3 GHz at 0.5 V drain to source voltage (V d), respectively. Benefiting from the structural advantage, TGTFET obtains better DC/AC characteristics compared to UTFET and LTFET. 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callnumber-first	T - Technology
author	Shupeng Chen
spellingShingle	Shupeng Chen misc TA401-492 misc T-shaped gate misc Recessed gate misc Tunnel field-effect transistor (TFET) misc Analog/RF performance misc Materials of engineering and construction. Mechanics of materials Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor
authorStr	Shupeng Chen
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topic_title	TA401-492 Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor T-shaped gate Recessed gate Tunnel field-effect transistor (TFET) Analog/RF performance
topic	misc TA401-492 misc T-shaped gate misc Recessed gate misc Tunnel field-effect transistor (TFET) misc Analog/RF performance misc Materials of engineering and construction. Mechanics of materials
topic_unstemmed	misc TA401-492 misc T-shaped gate misc Recessed gate misc Tunnel field-effect transistor (TFET) misc Analog/RF performance misc Materials of engineering and construction. Mechanics of materials
topic_browse	misc TA401-492 misc T-shaped gate misc Recessed gate misc Tunnel field-effect transistor (TFET) misc Analog/RF performance misc Materials of engineering and construction. Mechanics of materials
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title	Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor
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title_full	Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor
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journal	Nanoscale Research Letters
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author_browse	Shupeng Chen Hongxia Liu Shulong Wang Wei Li Xing Wang Lu Zhao
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title_sort	analog/rf performance of t-shape gate dual-source tunnel field-effect transistor
callnumber	TA401-492
title_auth	Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor
abstract	Abstract In this paper, a silicon-based T-shape gate dual-source tunnel field-effect transistor (TGTFET) is proposed and investigated by TCAD simulation. As a contrastive study, the structure, characteristic, and analog/RF performance of TGTFET, LTFET, and UTFET are discussed. The gate overlap introduced by T-shape gate can enhance the efficiency of tunneling junction. The dual-source regions in TGTFET can increase the on-state current (I ON) by offering a doubled tunneling junction area. In order to further improve the device performance, the n+ pocket is introduced in TGTFET to further increase the band-to-band tunneling rate. Simulation results reveal that the TGTFET’s I ON and switching ratio (I ON/I OFF) reach 81 μA/μm and 6.7 × 1010 at 1 V gate to source voltage (V g). The average subthreshold swing of TGTFET (SSavg, from 0 to 0.5 V V g) reaches 51.5 mV/dec, and the minimum subthreshold swing of TGTFET (SSmin, at 0.1 V V g) reaches 24.4 mV/dec. Moreover, it is found that TGTFET have strong robustness on drain-induced barrier lowering (DIBL) effect. The effects of doping concentration, geometric dimension, and applied voltage on device performance are investigated in order to create the TGTFET design guideline. Furthermore, the transconductance (g m), output conductance (g ds), gate to source capacitance (C gs), gate to drain capacitance (C gd), cut-off frequency (f T), and gain bandwidth (GBW) of TGTFET reach 232 μS/μm, 214 μS/μm, 0.7 fF/μm, 3.7 fF/μm, 11.9 GHz, and 2.3 GHz at 0.5 V drain to source voltage (V d), respectively. Benefiting from the structural advantage, TGTFET obtains better DC/AC characteristics compared to UTFET and LTFET. In conclusion, the considerable good performance makes TGTFET turn into a very attractive choice for the next generation of low-power and analog/RF applications.
abstractGer	Abstract In this paper, a silicon-based T-shape gate dual-source tunnel field-effect transistor (TGTFET) is proposed and investigated by TCAD simulation. As a contrastive study, the structure, characteristic, and analog/RF performance of TGTFET, LTFET, and UTFET are discussed. The gate overlap introduced by T-shape gate can enhance the efficiency of tunneling junction. The dual-source regions in TGTFET can increase the on-state current (I ON) by offering a doubled tunneling junction area. In order to further improve the device performance, the n+ pocket is introduced in TGTFET to further increase the band-to-band tunneling rate. Simulation results reveal that the TGTFET’s I ON and switching ratio (I ON/I OFF) reach 81 μA/μm and 6.7 × 1010 at 1 V gate to source voltage (V g). The average subthreshold swing of TGTFET (SSavg, from 0 to 0.5 V V g) reaches 51.5 mV/dec, and the minimum subthreshold swing of TGTFET (SSmin, at 0.1 V V g) reaches 24.4 mV/dec. Moreover, it is found that TGTFET have strong robustness on drain-induced barrier lowering (DIBL) effect. The effects of doping concentration, geometric dimension, and applied voltage on device performance are investigated in order to create the TGTFET design guideline. Furthermore, the transconductance (g m), output conductance (g ds), gate to source capacitance (C gs), gate to drain capacitance (C gd), cut-off frequency (f T), and gain bandwidth (GBW) of TGTFET reach 232 μS/μm, 214 μS/μm, 0.7 fF/μm, 3.7 fF/μm, 11.9 GHz, and 2.3 GHz at 0.5 V drain to source voltage (V d), respectively. Benefiting from the structural advantage, TGTFET obtains better DC/AC characteristics compared to UTFET and LTFET. In conclusion, the considerable good performance makes TGTFET turn into a very attractive choice for the next generation of low-power and analog/RF applications.
abstract_unstemmed	Abstract In this paper, a silicon-based T-shape gate dual-source tunnel field-effect transistor (TGTFET) is proposed and investigated by TCAD simulation. As a contrastive study, the structure, characteristic, and analog/RF performance of TGTFET, LTFET, and UTFET are discussed. The gate overlap introduced by T-shape gate can enhance the efficiency of tunneling junction. The dual-source regions in TGTFET can increase the on-state current (I ON) by offering a doubled tunneling junction area. In order to further improve the device performance, the n+ pocket is introduced in TGTFET to further increase the band-to-band tunneling rate. Simulation results reveal that the TGTFET’s I ON and switching ratio (I ON/I OFF) reach 81 μA/μm and 6.7 × 1010 at 1 V gate to source voltage (V g). The average subthreshold swing of TGTFET (SSavg, from 0 to 0.5 V V g) reaches 51.5 mV/dec, and the minimum subthreshold swing of TGTFET (SSmin, at 0.1 V V g) reaches 24.4 mV/dec. Moreover, it is found that TGTFET have strong robustness on drain-induced barrier lowering (DIBL) effect. The effects of doping concentration, geometric dimension, and applied voltage on device performance are investigated in order to create the TGTFET design guideline. Furthermore, the transconductance (g m), output conductance (g ds), gate to source capacitance (C gs), gate to drain capacitance (C gd), cut-off frequency (f T), and gain bandwidth (GBW) of TGTFET reach 232 μS/μm, 214 μS/μm, 0.7 fF/μm, 3.7 fF/μm, 11.9 GHz, and 2.3 GHz at 0.5 V drain to source voltage (V d), respectively. Benefiting from the structural advantage, TGTFET obtains better DC/AC characteristics compared to UTFET and LTFET. In conclusion, the considerable good performance makes TGTFET turn into a very attractive choice for the next generation of low-power and analog/RF applications.
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title_short	Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor
url	https://doi.org/10.1186/s11671-018-2723-y https://doaj.org/article/01aa97af94744181973741da2958f576 http://link.springer.com/article/10.1186/s11671-018-2723-y https://doaj.org/toc/1931-7573 https://doaj.org/toc/1556-276X
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author2	Hongxia Liu Shulong Wang Wei Li Xing Wang Lu Zhao
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up_date	2024-07-03T23:32:06.684Z
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