Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors

An enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron- mobility-transistor was fabricated using a recess gate and CF<sub<4</sub< plasma treatment to investigate its reliable applicability to high-power devices and circuits. The fluorinated-gate device showed hysteresi...
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Autor*in:	Soo Cheol Kang [verfasserIn] Hyun-Wook Jung [verfasserIn] Sung-Jae Chang [verfasserIn] Seung Mo Kim [verfasserIn] Sang Kyung Lee [verfasserIn] Byoung Hun Lee [verfasserIn] Haecheon Kim [verfasserIn] Youn-Sub Noh [verfasserIn] Sang-Heung Lee [verfasserIn] Seong-Il Kim [verfasserIn] Ho-Kyun Ahn [verfasserIn] Jong-Won Lim [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2020

Schlagwörter:	AlGaN/GaN HEMTs enhancement-mode fluorinated-gate recessed gate

Übergeordnetes Werk:	In: Nanomaterials - MDPI AG, 2012, 10(2020), 11, p 2116
Übergeordnetes Werk:	volume:10 ; year:2020 ; number:11, p 2116

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/nano10112116

Katalog-ID:	DOAJ057497397

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language	English
source	In Nanomaterials 10(2020), 11, p 2116 volume:10 year:2020 number:11, p 2116
sourceStr	In Nanomaterials 10(2020), 11, p 2116 volume:10 year:2020 number:11, p 2116
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	AlGaN/GaN HEMTs enhancement-mode fluorinated-gate recessed gate Chemistry
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container_title	Nanomaterials
authorswithroles_txt_mv	Soo Cheol Kang @@aut@@ Hyun-Wook Jung @@aut@@ Sung-Jae Chang @@aut@@ Seung Mo Kim @@aut@@ Sang Kyung Lee @@aut@@ Byoung Hun Lee @@aut@@ Haecheon Kim @@aut@@ Youn-Sub Noh @@aut@@ Sang-Heung Lee @@aut@@ Seong-Il Kim @@aut@@ Ho-Kyun Ahn @@aut@@ Jong-Won Lim @@aut@@
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callnumber-first	Q - Science
author	Soo Cheol Kang
spellingShingle	Soo Cheol Kang misc QD1-999 misc AlGaN/GaN HEMTs misc enhancement-mode misc fluorinated-gate misc recessed gate misc Chemistry Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
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topic_title	QD1-999 Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors AlGaN/GaN HEMTs enhancement-mode fluorinated-gate recessed gate
topic	misc QD1-999 misc AlGaN/GaN HEMTs misc enhancement-mode misc fluorinated-gate misc recessed gate misc Chemistry
topic_unstemmed	misc QD1-999 misc AlGaN/GaN HEMTs misc enhancement-mode misc fluorinated-gate misc recessed gate misc Chemistry
topic_browse	misc QD1-999 misc AlGaN/GaN HEMTs misc enhancement-mode misc fluorinated-gate misc recessed gate misc Chemistry
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title	Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
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title_full	Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
author_sort	Soo Cheol Kang
journal	Nanomaterials
journalStr	Nanomaterials
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author_browse	Soo Cheol Kang Hyun-Wook Jung Sung-Jae Chang Seung Mo Kim Sang Kyung Lee Byoung Hun Lee Haecheon Kim Youn-Sub Noh Sang-Heung Lee Seong-Il Kim Ho-Kyun Ahn Jong-Won Lim
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title_sort	charging effect by fluorine-treatment and recess gate for enhancement-mode on algan/gan high electron mobility transistors
callnumber	QD1-999
title_auth	Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
abstract	An enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron- mobility-transistor was fabricated using a recess gate and CF<sub<4</sub< plasma treatment to investigate its reliable applicability to high-power devices and circuits. The fluorinated-gate device showed hysteresis during the DC current-voltage measurement, and the polarity and magnitude of hysteresis depend on the drain voltage. The hysteresis phenomenon is due to the electron trapping at the Al<sub<2</sub<O<sub<3</sub</AlGaN interface and charging times longer than milliseconds were obtained by pulse I-V measurement. In addition, the subthreshold slope of the fluorinated-gate device was increased after the positive gate bias stress because of the two-dimensional electron gas reduction by ionized fluorine. Our systematic observation revealed that the effect of fluorine ions should be considered for the design of AlGaN/GaN power circuits.
abstractGer	An enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron- mobility-transistor was fabricated using a recess gate and CF<sub<4</sub< plasma treatment to investigate its reliable applicability to high-power devices and circuits. The fluorinated-gate device showed hysteresis during the DC current-voltage measurement, and the polarity and magnitude of hysteresis depend on the drain voltage. The hysteresis phenomenon is due to the electron trapping at the Al<sub<2</sub<O<sub<3</sub</AlGaN interface and charging times longer than milliseconds were obtained by pulse I-V measurement. In addition, the subthreshold slope of the fluorinated-gate device was increased after the positive gate bias stress because of the two-dimensional electron gas reduction by ionized fluorine. Our systematic observation revealed that the effect of fluorine ions should be considered for the design of AlGaN/GaN power circuits.
abstract_unstemmed	An enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron- mobility-transistor was fabricated using a recess gate and CF<sub<4</sub< plasma treatment to investigate its reliable applicability to high-power devices and circuits. The fluorinated-gate device showed hysteresis during the DC current-voltage measurement, and the polarity and magnitude of hysteresis depend on the drain voltage. The hysteresis phenomenon is due to the electron trapping at the Al<sub<2</sub<O<sub<3</sub</AlGaN interface and charging times longer than milliseconds were obtained by pulse I-V measurement. In addition, the subthreshold slope of the fluorinated-gate device was increased after the positive gate bias stress because of the two-dimensional electron gas reduction by ionized fluorine. Our systematic observation revealed that the effect of fluorine ions should be considered for the design of AlGaN/GaN power circuits.
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container_issue	11, p 2116
title_short	Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
url	https://doi.org/10.3390/nano10112116 https://doaj.org/article/fe8bc6099d2b4c19bc414e2ed09b6d2e https://www.mdpi.com/2079-4991/10/11/2116 https://doaj.org/toc/2079-4991
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up_date	2024-07-04T01:53:55.223Z
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