Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs

A 16-nm-L<sub<g</sub< p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for...
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Autor*in:	Jie Gu [verfasserIn] Qingzhu Zhang [verfasserIn] Zhenhua Wu [verfasserIn] Jiaxin Yao [verfasserIn] Zhaohao Zhang [verfasserIn] Xiaohui Zhu [verfasserIn] Guilei Wang [verfasserIn] Junjie Li [verfasserIn] Yongkui Zhang [verfasserIn] Yuwei Cai [verfasserIn] Renren Xu [verfasserIn] Gaobo Xu [verfasserIn] Qiuxia Xu [verfasserIn] Huaxiang Yin [verfasserIn] Jun Luo [verfasserIn] Wenwu Wang [verfasserIn] Tianchun Ye [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2021

Schlagwörter:	gate-all-around Si nanowire cryo-CMOS one-dimensional hole transport

Übergeordnetes Werk:	In: Nanomaterials - MDPI AG, 2012, 11(2021), 2, p 309
Übergeordnetes Werk:	volume:11 ; year:2021 ; number:2, p 309

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/nano11020309

Katalog-ID:	DOAJ057986207

Internformat


LEADER	01000caa a22002652 4500
001	DOAJ057986207
003	DE-627
005	20240414072147.0
007	cr uuu---uuuuu
008	230227s2021 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.3390/nano11020309 \|2 doi
035			\|a (DE-627)DOAJ057986207
035			\|a (DE-599)DOAJabc7abddcd4f42e4989faa93ad80468b
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
050		0	\|a QD1-999
100	0		\|a Jie Gu \|e verfasserin \|4 aut
245	1	0	\|a Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs
264		1	\|c 2021
336			\|a Text \|b txt \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
520			\|a A 16-nm-L<sub<g</sub< p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias.
650		4	\|a gate-all-around
650		4	\|a Si nanowire
650		4	\|a cryo-CMOS
650		4	\|a one-dimensional hole transport
653		0	\|a Chemistry
700	0		\|a Qingzhu Zhang \|e verfasserin \|4 aut
700	0		\|a Zhenhua Wu \|e verfasserin \|4 aut
700	0		\|a Jiaxin Yao \|e verfasserin \|4 aut
700	0		\|a Zhaohao Zhang \|e verfasserin \|4 aut
700	0		\|a Xiaohui Zhu \|e verfasserin \|4 aut
700	0		\|a Guilei Wang \|e verfasserin \|4 aut
700	0		\|a Junjie Li \|e verfasserin \|4 aut
700	0		\|a Yongkui Zhang \|e verfasserin \|4 aut
700	0		\|a Yuwei Cai \|e verfasserin \|4 aut
700	0		\|a Renren Xu \|e verfasserin \|4 aut
700	0		\|a Gaobo Xu \|e verfasserin \|4 aut
700	0		\|a Qiuxia Xu \|e verfasserin \|4 aut
700	0		\|a Huaxiang Yin \|e verfasserin \|4 aut
700	0		\|a Jun Luo \|e verfasserin \|4 aut
700	0		\|a Wenwu Wang \|e verfasserin \|4 aut
700	0		\|a Tianchun Ye \|e verfasserin \|4 aut
773	0	8	\|i In \|t Nanomaterials \|d MDPI AG, 2012 \|g 11(2021), 2, p 309 \|w (DE-627)718627199 \|w (DE-600)2662255-5 \|x 20794991 \|7 nnns
773	1	8	\|g volume:11 \|g year:2021 \|g number:2, p 309
856	4	0	\|u https://doi.org/10.3390/nano11020309 \|z kostenfrei
856	4	0	\|u https://doaj.org/article/abc7abddcd4f42e4989faa93ad80468b \|z kostenfrei
856	4	0	\|u https://www.mdpi.com/2079-4991/11/2/309 \|z kostenfrei
856	4	2	\|u https://doaj.org/toc/2079-4991 \|y Journal toc \|z kostenfrei
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_DOAJ
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_39
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_74
912			\|a GBV_ILN_95
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_151
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_213
912			\|a GBV_ILN_230
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_602
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2108
912			\|a GBV_ILN_2119
912			\|a GBV_ILN_4012
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4367
912			\|a GBV_ILN_4700
951			\|a AR
952			\|d 11 \|j 2021 \|e 2, p 309

Indexfelder

author_variant	j g jg q z qz z w zw j y jy z z zz x z xz g w gw j l jl y z yz y c yc r x rx g x gx q x qx h y hy j l jl w w ww t y ty
matchkey_str	article:20794991:2021----::roeitasothrceitcopyeaelaons
hierarchy_sort_str	2021
callnumber-subject-code	QD
publishDate	2021
allfields	10.3390/nano11020309 doi (DE-627)DOAJ057986207 (DE-599)DOAJabc7abddcd4f42e4989faa93ad80468b DE-627 ger DE-627 rakwb eng QD1-999 Jie Gu verfasserin aut Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A 16-nm-L<sub<g</sub< p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias. gate-all-around Si nanowire cryo-CMOS one-dimensional hole transport Chemistry Qingzhu Zhang verfasserin aut Zhenhua Wu verfasserin aut Jiaxin Yao verfasserin aut Zhaohao Zhang verfasserin aut Xiaohui Zhu verfasserin aut Guilei Wang verfasserin aut Junjie Li verfasserin aut Yongkui Zhang verfasserin aut Yuwei Cai verfasserin aut Renren Xu verfasserin aut Gaobo Xu verfasserin aut Qiuxia Xu verfasserin aut Huaxiang Yin verfasserin aut Jun Luo verfasserin aut Wenwu Wang verfasserin aut Tianchun Ye verfasserin aut In Nanomaterials MDPI AG, 2012 11(2021), 2, p 309 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:11 year:2021 number:2, p 309 https://doi.org/10.3390/nano11020309 kostenfrei https://doaj.org/article/abc7abddcd4f42e4989faa93ad80468b kostenfrei https://www.mdpi.com/2079-4991/11/2/309 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 2, p 309
spelling	10.3390/nano11020309 doi (DE-627)DOAJ057986207 (DE-599)DOAJabc7abddcd4f42e4989faa93ad80468b DE-627 ger DE-627 rakwb eng QD1-999 Jie Gu verfasserin aut Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A 16-nm-L<sub<g</sub< p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias. gate-all-around Si nanowire cryo-CMOS one-dimensional hole transport Chemistry Qingzhu Zhang verfasserin aut Zhenhua Wu verfasserin aut Jiaxin Yao verfasserin aut Zhaohao Zhang verfasserin aut Xiaohui Zhu verfasserin aut Guilei Wang verfasserin aut Junjie Li verfasserin aut Yongkui Zhang verfasserin aut Yuwei Cai verfasserin aut Renren Xu verfasserin aut Gaobo Xu verfasserin aut Qiuxia Xu verfasserin aut Huaxiang Yin verfasserin aut Jun Luo verfasserin aut Wenwu Wang verfasserin aut Tianchun Ye verfasserin aut In Nanomaterials MDPI AG, 2012 11(2021), 2, p 309 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:11 year:2021 number:2, p 309 https://doi.org/10.3390/nano11020309 kostenfrei https://doaj.org/article/abc7abddcd4f42e4989faa93ad80468b kostenfrei https://www.mdpi.com/2079-4991/11/2/309 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 2, p 309
allfields_unstemmed	10.3390/nano11020309 doi (DE-627)DOAJ057986207 (DE-599)DOAJabc7abddcd4f42e4989faa93ad80468b DE-627 ger DE-627 rakwb eng QD1-999 Jie Gu verfasserin aut Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A 16-nm-L<sub<g</sub< p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias. gate-all-around Si nanowire cryo-CMOS one-dimensional hole transport Chemistry Qingzhu Zhang verfasserin aut Zhenhua Wu verfasserin aut Jiaxin Yao verfasserin aut Zhaohao Zhang verfasserin aut Xiaohui Zhu verfasserin aut Guilei Wang verfasserin aut Junjie Li verfasserin aut Yongkui Zhang verfasserin aut Yuwei Cai verfasserin aut Renren Xu verfasserin aut Gaobo Xu verfasserin aut Qiuxia Xu verfasserin aut Huaxiang Yin verfasserin aut Jun Luo verfasserin aut Wenwu Wang verfasserin aut Tianchun Ye verfasserin aut In Nanomaterials MDPI AG, 2012 11(2021), 2, p 309 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:11 year:2021 number:2, p 309 https://doi.org/10.3390/nano11020309 kostenfrei https://doaj.org/article/abc7abddcd4f42e4989faa93ad80468b kostenfrei https://www.mdpi.com/2079-4991/11/2/309 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 2, p 309
allfieldsGer	10.3390/nano11020309 doi (DE-627)DOAJ057986207 (DE-599)DOAJabc7abddcd4f42e4989faa93ad80468b DE-627 ger DE-627 rakwb eng QD1-999 Jie Gu verfasserin aut Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A 16-nm-L<sub<g</sub< p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias. gate-all-around Si nanowire cryo-CMOS one-dimensional hole transport Chemistry Qingzhu Zhang verfasserin aut Zhenhua Wu verfasserin aut Jiaxin Yao verfasserin aut Zhaohao Zhang verfasserin aut Xiaohui Zhu verfasserin aut Guilei Wang verfasserin aut Junjie Li verfasserin aut Yongkui Zhang verfasserin aut Yuwei Cai verfasserin aut Renren Xu verfasserin aut Gaobo Xu verfasserin aut Qiuxia Xu verfasserin aut Huaxiang Yin verfasserin aut Jun Luo verfasserin aut Wenwu Wang verfasserin aut Tianchun Ye verfasserin aut In Nanomaterials MDPI AG, 2012 11(2021), 2, p 309 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:11 year:2021 number:2, p 309 https://doi.org/10.3390/nano11020309 kostenfrei https://doaj.org/article/abc7abddcd4f42e4989faa93ad80468b kostenfrei https://www.mdpi.com/2079-4991/11/2/309 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 2, p 309
allfieldsSound	10.3390/nano11020309 doi (DE-627)DOAJ057986207 (DE-599)DOAJabc7abddcd4f42e4989faa93ad80468b DE-627 ger DE-627 rakwb eng QD1-999 Jie Gu verfasserin aut Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A 16-nm-L<sub<g</sub< p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias. gate-all-around Si nanowire cryo-CMOS one-dimensional hole transport Chemistry Qingzhu Zhang verfasserin aut Zhenhua Wu verfasserin aut Jiaxin Yao verfasserin aut Zhaohao Zhang verfasserin aut Xiaohui Zhu verfasserin aut Guilei Wang verfasserin aut Junjie Li verfasserin aut Yongkui Zhang verfasserin aut Yuwei Cai verfasserin aut Renren Xu verfasserin aut Gaobo Xu verfasserin aut Qiuxia Xu verfasserin aut Huaxiang Yin verfasserin aut Jun Luo verfasserin aut Wenwu Wang verfasserin aut Tianchun Ye verfasserin aut In Nanomaterials MDPI AG, 2012 11(2021), 2, p 309 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:11 year:2021 number:2, p 309 https://doi.org/10.3390/nano11020309 kostenfrei https://doaj.org/article/abc7abddcd4f42e4989faa93ad80468b kostenfrei https://www.mdpi.com/2079-4991/11/2/309 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 2, p 309
language	English
source	In Nanomaterials 11(2021), 2, p 309 volume:11 year:2021 number:2, p 309
sourceStr	In Nanomaterials 11(2021), 2, p 309 volume:11 year:2021 number:2, p 309
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	gate-all-around Si nanowire cryo-CMOS one-dimensional hole transport Chemistry
isfreeaccess_bool	true
container_title	Nanomaterials
authorswithroles_txt_mv	Jie Gu @@aut@@ Qingzhu Zhang @@aut@@ Zhenhua Wu @@aut@@ Jiaxin Yao @@aut@@ Zhaohao Zhang @@aut@@ Xiaohui Zhu @@aut@@ Guilei Wang @@aut@@ Junjie Li @@aut@@ Yongkui Zhang @@aut@@ Yuwei Cai @@aut@@ Renren Xu @@aut@@ Gaobo Xu @@aut@@ Qiuxia Xu @@aut@@ Huaxiang Yin @@aut@@ Jun Luo @@aut@@ Wenwu Wang @@aut@@ Tianchun Ye @@aut@@
publishDateDaySort_date	2021-01-01T00:00:00Z
hierarchy_top_id	718627199
id	DOAJ057986207
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ057986207</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20240414072147.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230227s2021 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.3390/nano11020309</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ057986207</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJabc7abddcd4f42e4989faa93ad80468b</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QD1-999</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Jie Gu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2021</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">A 16-nm-L<sub<g</sub< p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">gate-all-around</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Si nanowire</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">cryo-CMOS</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">one-dimensional hole transport</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Chemistry</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Qingzhu Zhang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Zhenhua Wu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Jiaxin Yao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Zhaohao Zhang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Xiaohui Zhu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Guilei Wang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Junjie Li</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Yongkui Zhang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Yuwei Cai</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Renren Xu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Gaobo Xu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Qiuxia Xu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Huaxiang Yin</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Jun Luo</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Wenwu Wang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Tianchun Ye</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">Nanomaterials</subfield><subfield code="d">MDPI AG, 2012</subfield><subfield code="g">11(2021), 2, p 309</subfield><subfield code="w">(DE-627)718627199</subfield><subfield code="w">(DE-600)2662255-5</subfield><subfield code="x">20794991</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:11</subfield><subfield code="g">year:2021</subfield><subfield code="g">number:2, p 309</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.3390/nano11020309</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/abc7abddcd4f42e4989faa93ad80468b</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://www.mdpi.com/2079-4991/11/2/309</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2079-4991</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2108</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2119</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">11</subfield><subfield code="j">2021</subfield><subfield code="e">2, p 309</subfield></datafield></record></collection>
callnumber-first	Q - Science
author	Jie Gu
spellingShingle	Jie Gu misc QD1-999 misc gate-all-around misc Si nanowire misc cryo-CMOS misc one-dimensional hole transport misc Chemistry Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs
authorStr	Jie Gu
ppnlink_with_tag_str_mv	@@773@@(DE-627)718627199
format	electronic Article
delete_txt_mv	keep
author_role	aut aut aut aut aut aut aut aut aut aut aut aut aut aut aut aut aut
collection	DOAJ
remote_str	true
callnumber-label	QD1-999
illustrated	Not Illustrated
issn	20794991
topic_title	QD1-999 Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs gate-all-around Si nanowire cryo-CMOS one-dimensional hole transport
topic	misc QD1-999 misc gate-all-around misc Si nanowire misc cryo-CMOS misc one-dimensional hole transport misc Chemistry
topic_unstemmed	misc QD1-999 misc gate-all-around misc Si nanowire misc cryo-CMOS misc one-dimensional hole transport misc Chemistry
topic_browse	misc QD1-999 misc gate-all-around misc Si nanowire misc cryo-CMOS misc one-dimensional hole transport misc Chemistry
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	cr
hierarchy_parent_title	Nanomaterials
hierarchy_parent_id	718627199
hierarchy_top_title	Nanomaterials
isfreeaccess_txt	true
familylinks_str_mv	(DE-627)718627199 (DE-600)2662255-5
title	Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs
ctrlnum	(DE-627)DOAJ057986207 (DE-599)DOAJabc7abddcd4f42e4989faa93ad80468b
title_full	Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs
author_sort	Jie Gu
journal	Nanomaterials
journalStr	Nanomaterials
callnumber-first-code	Q
lang_code	eng
isOA_bool	true
recordtype	marc
publishDateSort	2021
contenttype_str_mv	txt
author_browse	Jie Gu Qingzhu Zhang Zhenhua Wu Jiaxin Yao Zhaohao Zhang Xiaohui Zhu Guilei Wang Junjie Li Yongkui Zhang Yuwei Cai Renren Xu Gaobo Xu Qiuxia Xu Huaxiang Yin Jun Luo Wenwu Wang Tianchun Ye
container_volume	11
class	QD1-999
format_se	Elektronische Aufsätze
author-letter	Jie Gu
doi_str_mv	10.3390/nano11020309
author2-role	verfasserin
title_sort	cryogenic transport characteristics of p-type gate-all-around silicon nanowire mosfets
callnumber	QD1-999
title_auth	Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs
abstract	A 16-nm-L<sub<g</sub< p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias.
abstractGer	A 16-nm-L<sub<g</sub< p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias.
abstract_unstemmed	A 16-nm-L<sub<g</sub< p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias.
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700
container_issue	2, p 309
title_short	Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs
url	https://doi.org/10.3390/nano11020309 https://doaj.org/article/abc7abddcd4f42e4989faa93ad80468b https://www.mdpi.com/2079-4991/11/2/309 https://doaj.org/toc/2079-4991
remote_bool	true
author2	Qingzhu Zhang Zhenhua Wu Jiaxin Yao Zhaohao Zhang Xiaohui Zhu Guilei Wang Junjie Li Yongkui Zhang Yuwei Cai Renren Xu Gaobo Xu Qiuxia Xu Huaxiang Yin Jun Luo Wenwu Wang Tianchun Ye
author2Str	Qingzhu Zhang Zhenhua Wu Jiaxin Yao Zhaohao Zhang Xiaohui Zhu Guilei Wang Junjie Li Yongkui Zhang Yuwei Cai Renren Xu Gaobo Xu Qiuxia Xu Huaxiang Yin Jun Luo Wenwu Wang Tianchun Ye
ppnlink	718627199
callnumber-subject	QD - Chemistry
mediatype_str_mv	c
isOA_txt	true
hochschulschrift_bool	false
doi_str	10.3390/nano11020309
callnumber-a	QD1-999
up_date	2024-07-03T15:18:54.475Z
_version_	1803571622808911872
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ057986207</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20240414072147.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230227s2021 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.3390/nano11020309</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ057986207</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJabc7abddcd4f42e4989faa93ad80468b</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QD1-999</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Jie Gu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2021</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">A 16-nm-L<sub<g</sub< p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">gate-all-around</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Si nanowire</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">cryo-CMOS</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">one-dimensional hole transport</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Chemistry</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Qingzhu Zhang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Zhenhua Wu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Jiaxin Yao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Zhaohao Zhang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Xiaohui Zhu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Guilei Wang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Junjie Li</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Yongkui Zhang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Yuwei Cai</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Renren Xu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Gaobo Xu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Qiuxia Xu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Huaxiang Yin</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Jun Luo</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Wenwu Wang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Tianchun Ye</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">Nanomaterials</subfield><subfield code="d">MDPI AG, 2012</subfield><subfield code="g">11(2021), 2, p 309</subfield><subfield code="w">(DE-627)718627199</subfield><subfield code="w">(DE-600)2662255-5</subfield><subfield code="x">20794991</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:11</subfield><subfield code="g">year:2021</subfield><subfield code="g">number:2, p 309</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.3390/nano11020309</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/abc7abddcd4f42e4989faa93ad80468b</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://www.mdpi.com/2079-4991/11/2/309</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2079-4991</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2108</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2119</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">11</subfield><subfield code="j">2021</subfield><subfield code="e">2, p 309</subfield></datafield></record></collection>
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Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs

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