Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs
A 16-nm-L<sub<g</sub< p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for...
Ausführliche Beschreibung
Autor*in: |
Jie Gu [verfasserIn] Qingzhu Zhang [verfasserIn] Zhenhua Wu [verfasserIn] Jiaxin Yao [verfasserIn] Zhaohao Zhang [verfasserIn] Xiaohui Zhu [verfasserIn] Guilei Wang [verfasserIn] Junjie Li [verfasserIn] Yongkui Zhang [verfasserIn] Yuwei Cai [verfasserIn] Renren Xu [verfasserIn] Gaobo Xu [verfasserIn] Qiuxia Xu [verfasserIn] Huaxiang Yin [verfasserIn] Jun Luo [verfasserIn] Wenwu Wang [verfasserIn] Tianchun Ye [verfasserIn] |
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E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2021 |
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Übergeordnetes Werk: |
In: Nanomaterials - MDPI AG, 2012, 11(2021), 2, p 309 |
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Übergeordnetes Werk: |
volume:11 ; year:2021 ; number:2, p 309 |
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DOI / URN: |
10.3390/nano11020309 |
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Katalog-ID: |
DOAJ057986207 |
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LEADER | 01000caa a22002652 4500 | ||
---|---|---|---|
001 | DOAJ057986207 | ||
003 | DE-627 | ||
005 | 20240414072147.0 | ||
007 | cr uuu---uuuuu | ||
008 | 230227s2021 xx |||||o 00| ||eng c | ||
024 | 7 | |a 10.3390/nano11020309 |2 doi | |
035 | |a (DE-627)DOAJ057986207 | ||
035 | |a (DE-599)DOAJabc7abddcd4f42e4989faa93ad80468b | ||
040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
041 | |a eng | ||
050 | 0 | |a QD1-999 | |
100 | 0 | |a Jie Gu |e verfasserin |4 aut | |
245 | 1 | 0 | |a Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs |
264 | 1 | |c 2021 | |
336 | |a Text |b txt |2 rdacontent | ||
337 | |a Computermedien |b c |2 rdamedia | ||
338 | |a Online-Ressource |b cr |2 rdacarrier | ||
520 | |a A 16-nm-L<sub<g</sub< p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias. | ||
650 | 4 | |a gate-all-around | |
650 | 4 | |a Si nanowire | |
650 | 4 | |a cryo-CMOS | |
650 | 4 | |a one-dimensional hole transport | |
653 | 0 | |a Chemistry | |
700 | 0 | |a Qingzhu Zhang |e verfasserin |4 aut | |
700 | 0 | |a Zhenhua Wu |e verfasserin |4 aut | |
700 | 0 | |a Jiaxin Yao |e verfasserin |4 aut | |
700 | 0 | |a Zhaohao Zhang |e verfasserin |4 aut | |
700 | 0 | |a Xiaohui Zhu |e verfasserin |4 aut | |
700 | 0 | |a Guilei Wang |e verfasserin |4 aut | |
700 | 0 | |a Junjie Li |e verfasserin |4 aut | |
700 | 0 | |a Yongkui Zhang |e verfasserin |4 aut | |
700 | 0 | |a Yuwei Cai |e verfasserin |4 aut | |
700 | 0 | |a Renren Xu |e verfasserin |4 aut | |
700 | 0 | |a Gaobo Xu |e verfasserin |4 aut | |
700 | 0 | |a Qiuxia Xu |e verfasserin |4 aut | |
700 | 0 | |a Huaxiang Yin |e verfasserin |4 aut | |
700 | 0 | |a Jun Luo |e verfasserin |4 aut | |
700 | 0 | |a Wenwu Wang |e verfasserin |4 aut | |
700 | 0 | |a Tianchun Ye |e verfasserin |4 aut | |
773 | 0 | 8 | |i In |t Nanomaterials |d MDPI AG, 2012 |g 11(2021), 2, p 309 |w (DE-627)718627199 |w (DE-600)2662255-5 |x 20794991 |7 nnns |
773 | 1 | 8 | |g volume:11 |g year:2021 |g number:2, p 309 |
856 | 4 | 0 | |u https://doi.org/10.3390/nano11020309 |z kostenfrei |
856 | 4 | 0 | |u https://doaj.org/article/abc7abddcd4f42e4989faa93ad80468b |z kostenfrei |
856 | 4 | 0 | |u https://www.mdpi.com/2079-4991/11/2/309 |z kostenfrei |
856 | 4 | 2 | |u https://doaj.org/toc/2079-4991 |y Journal toc |z kostenfrei |
912 | |a GBV_USEFLAG_A | ||
912 | |a SYSFLAG_A | ||
912 | |a GBV_DOAJ | ||
912 | |a GBV_ILN_20 | ||
912 | |a GBV_ILN_22 | ||
912 | |a GBV_ILN_23 | ||
912 | |a GBV_ILN_24 | ||
912 | |a GBV_ILN_39 | ||
912 | |a GBV_ILN_40 | ||
912 | |a GBV_ILN_60 | ||
912 | |a GBV_ILN_62 | ||
912 | |a GBV_ILN_63 | ||
912 | |a GBV_ILN_65 | ||
912 | |a GBV_ILN_69 | ||
912 | |a GBV_ILN_70 | ||
912 | |a GBV_ILN_73 | ||
912 | |a GBV_ILN_74 | ||
912 | |a GBV_ILN_95 | ||
912 | |a GBV_ILN_105 | ||
912 | |a GBV_ILN_110 | ||
912 | |a GBV_ILN_151 | ||
912 | |a GBV_ILN_161 | ||
912 | |a GBV_ILN_170 | ||
912 | |a GBV_ILN_213 | ||
912 | |a GBV_ILN_230 | ||
912 | |a GBV_ILN_285 | ||
912 | |a GBV_ILN_293 | ||
912 | |a GBV_ILN_602 | ||
912 | |a GBV_ILN_2014 | ||
912 | |a GBV_ILN_2055 | ||
912 | |a GBV_ILN_2108 | ||
912 | |a GBV_ILN_2119 | ||
912 | |a GBV_ILN_4012 | ||
912 | |a GBV_ILN_4037 | ||
912 | |a GBV_ILN_4112 | ||
912 | |a GBV_ILN_4125 | ||
912 | |a GBV_ILN_4126 | ||
912 | |a GBV_ILN_4249 | ||
912 | |a GBV_ILN_4305 | ||
912 | |a GBV_ILN_4306 | ||
912 | |a GBV_ILN_4307 | ||
912 | |a GBV_ILN_4313 | ||
912 | |a GBV_ILN_4322 | ||
912 | |a GBV_ILN_4323 | ||
912 | |a GBV_ILN_4324 | ||
912 | |a GBV_ILN_4325 | ||
912 | |a GBV_ILN_4335 | ||
912 | |a GBV_ILN_4338 | ||
912 | |a GBV_ILN_4367 | ||
912 | |a GBV_ILN_4700 | ||
951 | |a AR | ||
952 | |d 11 |j 2021 |e 2, p 309 |
author_variant |
j g jg q z qz z w zw j y jy z z zz x z xz g w gw j l jl y z yz y c yc r x rx g x gx q x qx h y hy j l jl w w ww t y ty |
---|---|
matchkey_str |
article:20794991:2021----::roeitasothrceitcopyeaelaons |
hierarchy_sort_str |
2021 |
callnumber-subject-code |
QD |
publishDate |
2021 |
allfields |
10.3390/nano11020309 doi (DE-627)DOAJ057986207 (DE-599)DOAJabc7abddcd4f42e4989faa93ad80468b DE-627 ger DE-627 rakwb eng QD1-999 Jie Gu verfasserin aut Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A 16-nm-L<sub<g</sub< p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias. gate-all-around Si nanowire cryo-CMOS one-dimensional hole transport Chemistry Qingzhu Zhang verfasserin aut Zhenhua Wu verfasserin aut Jiaxin Yao verfasserin aut Zhaohao Zhang verfasserin aut Xiaohui Zhu verfasserin aut Guilei Wang verfasserin aut Junjie Li verfasserin aut Yongkui Zhang verfasserin aut Yuwei Cai verfasserin aut Renren Xu verfasserin aut Gaobo Xu verfasserin aut Qiuxia Xu verfasserin aut Huaxiang Yin verfasserin aut Jun Luo verfasserin aut Wenwu Wang verfasserin aut Tianchun Ye verfasserin aut In Nanomaterials MDPI AG, 2012 11(2021), 2, p 309 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:11 year:2021 number:2, p 309 https://doi.org/10.3390/nano11020309 kostenfrei https://doaj.org/article/abc7abddcd4f42e4989faa93ad80468b kostenfrei https://www.mdpi.com/2079-4991/11/2/309 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 2, p 309 |
spelling |
10.3390/nano11020309 doi (DE-627)DOAJ057986207 (DE-599)DOAJabc7abddcd4f42e4989faa93ad80468b DE-627 ger DE-627 rakwb eng QD1-999 Jie Gu verfasserin aut Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A 16-nm-L<sub<g</sub< p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias. gate-all-around Si nanowire cryo-CMOS one-dimensional hole transport Chemistry Qingzhu Zhang verfasserin aut Zhenhua Wu verfasserin aut Jiaxin Yao verfasserin aut Zhaohao Zhang verfasserin aut Xiaohui Zhu verfasserin aut Guilei Wang verfasserin aut Junjie Li verfasserin aut Yongkui Zhang verfasserin aut Yuwei Cai verfasserin aut Renren Xu verfasserin aut Gaobo Xu verfasserin aut Qiuxia Xu verfasserin aut Huaxiang Yin verfasserin aut Jun Luo verfasserin aut Wenwu Wang verfasserin aut Tianchun Ye verfasserin aut In Nanomaterials MDPI AG, 2012 11(2021), 2, p 309 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:11 year:2021 number:2, p 309 https://doi.org/10.3390/nano11020309 kostenfrei https://doaj.org/article/abc7abddcd4f42e4989faa93ad80468b kostenfrei https://www.mdpi.com/2079-4991/11/2/309 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 2, p 309 |
allfields_unstemmed |
10.3390/nano11020309 doi (DE-627)DOAJ057986207 (DE-599)DOAJabc7abddcd4f42e4989faa93ad80468b DE-627 ger DE-627 rakwb eng QD1-999 Jie Gu verfasserin aut Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A 16-nm-L<sub<g</sub< p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias. gate-all-around Si nanowire cryo-CMOS one-dimensional hole transport Chemistry Qingzhu Zhang verfasserin aut Zhenhua Wu verfasserin aut Jiaxin Yao verfasserin aut Zhaohao Zhang verfasserin aut Xiaohui Zhu verfasserin aut Guilei Wang verfasserin aut Junjie Li verfasserin aut Yongkui Zhang verfasserin aut Yuwei Cai verfasserin aut Renren Xu verfasserin aut Gaobo Xu verfasserin aut Qiuxia Xu verfasserin aut Huaxiang Yin verfasserin aut Jun Luo verfasserin aut Wenwu Wang verfasserin aut Tianchun Ye verfasserin aut In Nanomaterials MDPI AG, 2012 11(2021), 2, p 309 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:11 year:2021 number:2, p 309 https://doi.org/10.3390/nano11020309 kostenfrei https://doaj.org/article/abc7abddcd4f42e4989faa93ad80468b kostenfrei https://www.mdpi.com/2079-4991/11/2/309 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 2, p 309 |
allfieldsGer |
10.3390/nano11020309 doi (DE-627)DOAJ057986207 (DE-599)DOAJabc7abddcd4f42e4989faa93ad80468b DE-627 ger DE-627 rakwb eng QD1-999 Jie Gu verfasserin aut Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A 16-nm-L<sub<g</sub< p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias. gate-all-around Si nanowire cryo-CMOS one-dimensional hole transport Chemistry Qingzhu Zhang verfasserin aut Zhenhua Wu verfasserin aut Jiaxin Yao verfasserin aut Zhaohao Zhang verfasserin aut Xiaohui Zhu verfasserin aut Guilei Wang verfasserin aut Junjie Li verfasserin aut Yongkui Zhang verfasserin aut Yuwei Cai verfasserin aut Renren Xu verfasserin aut Gaobo Xu verfasserin aut Qiuxia Xu verfasserin aut Huaxiang Yin verfasserin aut Jun Luo verfasserin aut Wenwu Wang verfasserin aut Tianchun Ye verfasserin aut In Nanomaterials MDPI AG, 2012 11(2021), 2, p 309 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:11 year:2021 number:2, p 309 https://doi.org/10.3390/nano11020309 kostenfrei https://doaj.org/article/abc7abddcd4f42e4989faa93ad80468b kostenfrei https://www.mdpi.com/2079-4991/11/2/309 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 2, p 309 |
allfieldsSound |
10.3390/nano11020309 doi (DE-627)DOAJ057986207 (DE-599)DOAJabc7abddcd4f42e4989faa93ad80468b DE-627 ger DE-627 rakwb eng QD1-999 Jie Gu verfasserin aut Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A 16-nm-L<sub<g</sub< p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias. gate-all-around Si nanowire cryo-CMOS one-dimensional hole transport Chemistry Qingzhu Zhang verfasserin aut Zhenhua Wu verfasserin aut Jiaxin Yao verfasserin aut Zhaohao Zhang verfasserin aut Xiaohui Zhu verfasserin aut Guilei Wang verfasserin aut Junjie Li verfasserin aut Yongkui Zhang verfasserin aut Yuwei Cai verfasserin aut Renren Xu verfasserin aut Gaobo Xu verfasserin aut Qiuxia Xu verfasserin aut Huaxiang Yin verfasserin aut Jun Luo verfasserin aut Wenwu Wang verfasserin aut Tianchun Ye verfasserin aut In Nanomaterials MDPI AG, 2012 11(2021), 2, p 309 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:11 year:2021 number:2, p 309 https://doi.org/10.3390/nano11020309 kostenfrei https://doaj.org/article/abc7abddcd4f42e4989faa93ad80468b kostenfrei https://www.mdpi.com/2079-4991/11/2/309 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 2, p 309 |
language |
English |
source |
In Nanomaterials 11(2021), 2, p 309 volume:11 year:2021 number:2, p 309 |
sourceStr |
In Nanomaterials 11(2021), 2, p 309 volume:11 year:2021 number:2, p 309 |
format_phy_str_mv |
Article |
institution |
findex.gbv.de |
topic_facet |
gate-all-around Si nanowire cryo-CMOS one-dimensional hole transport Chemistry |
isfreeaccess_bool |
true |
container_title |
Nanomaterials |
authorswithroles_txt_mv |
Jie Gu @@aut@@ Qingzhu Zhang @@aut@@ Zhenhua Wu @@aut@@ Jiaxin Yao @@aut@@ Zhaohao Zhang @@aut@@ Xiaohui Zhu @@aut@@ Guilei Wang @@aut@@ Junjie Li @@aut@@ Yongkui Zhang @@aut@@ Yuwei Cai @@aut@@ Renren Xu @@aut@@ Gaobo Xu @@aut@@ Qiuxia Xu @@aut@@ Huaxiang Yin @@aut@@ Jun Luo @@aut@@ Wenwu Wang @@aut@@ Tianchun Ye @@aut@@ |
publishDateDaySort_date |
2021-01-01T00:00:00Z |
hierarchy_top_id |
718627199 |
id |
DOAJ057986207 |
language_de |
englisch |
fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ057986207</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20240414072147.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230227s2021 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.3390/nano11020309</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ057986207</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJabc7abddcd4f42e4989faa93ad80468b</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QD1-999</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Jie Gu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2021</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">A 16-nm-L<sub<g</sub< p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">gate-all-around</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Si nanowire</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">cryo-CMOS</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">one-dimensional hole transport</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Chemistry</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Qingzhu Zhang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Zhenhua Wu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Jiaxin Yao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Zhaohao Zhang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Xiaohui Zhu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Guilei Wang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Junjie Li</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Yongkui Zhang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Yuwei Cai</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Renren Xu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Gaobo Xu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Qiuxia Xu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Huaxiang Yin</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Jun Luo</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Wenwu Wang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Tianchun Ye</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">Nanomaterials</subfield><subfield code="d">MDPI AG, 2012</subfield><subfield code="g">11(2021), 2, p 309</subfield><subfield code="w">(DE-627)718627199</subfield><subfield code="w">(DE-600)2662255-5</subfield><subfield code="x">20794991</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:11</subfield><subfield code="g">year:2021</subfield><subfield code="g">number:2, p 309</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.3390/nano11020309</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/abc7abddcd4f42e4989faa93ad80468b</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://www.mdpi.com/2079-4991/11/2/309</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2079-4991</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2108</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2119</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">11</subfield><subfield code="j">2021</subfield><subfield code="e">2, p 309</subfield></datafield></record></collection>
|
callnumber-first |
Q - Science |
author |
Jie Gu |
spellingShingle |
Jie Gu misc QD1-999 misc gate-all-around misc Si nanowire misc cryo-CMOS misc one-dimensional hole transport misc Chemistry Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs |
authorStr |
Jie Gu |
ppnlink_with_tag_str_mv |
@@773@@(DE-627)718627199 |
format |
electronic Article |
delete_txt_mv |
keep |
author_role |
aut aut aut aut aut aut aut aut aut aut aut aut aut aut aut aut aut |
collection |
DOAJ |
remote_str |
true |
callnumber-label |
QD1-999 |
illustrated |
Not Illustrated |
issn |
20794991 |
topic_title |
QD1-999 Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs gate-all-around Si nanowire cryo-CMOS one-dimensional hole transport |
topic |
misc QD1-999 misc gate-all-around misc Si nanowire misc cryo-CMOS misc one-dimensional hole transport misc Chemistry |
topic_unstemmed |
misc QD1-999 misc gate-all-around misc Si nanowire misc cryo-CMOS misc one-dimensional hole transport misc Chemistry |
topic_browse |
misc QD1-999 misc gate-all-around misc Si nanowire misc cryo-CMOS misc one-dimensional hole transport misc Chemistry |
format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
format_main_str_mv |
Text Zeitschrift/Artikel |
carriertype_str_mv |
cr |
hierarchy_parent_title |
Nanomaterials |
hierarchy_parent_id |
718627199 |
hierarchy_top_title |
Nanomaterials |
isfreeaccess_txt |
true |
familylinks_str_mv |
(DE-627)718627199 (DE-600)2662255-5 |
title |
Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs |
ctrlnum |
(DE-627)DOAJ057986207 (DE-599)DOAJabc7abddcd4f42e4989faa93ad80468b |
title_full |
Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs |
author_sort |
Jie Gu |
journal |
Nanomaterials |
journalStr |
Nanomaterials |
callnumber-first-code |
Q |
lang_code |
eng |
isOA_bool |
true |
recordtype |
marc |
publishDateSort |
2021 |
contenttype_str_mv |
txt |
author_browse |
Jie Gu Qingzhu Zhang Zhenhua Wu Jiaxin Yao Zhaohao Zhang Xiaohui Zhu Guilei Wang Junjie Li Yongkui Zhang Yuwei Cai Renren Xu Gaobo Xu Qiuxia Xu Huaxiang Yin Jun Luo Wenwu Wang Tianchun Ye |
container_volume |
11 |
class |
QD1-999 |
format_se |
Elektronische Aufsätze |
author-letter |
Jie Gu |
doi_str_mv |
10.3390/nano11020309 |
author2-role |
verfasserin |
title_sort |
cryogenic transport characteristics of p-type gate-all-around silicon nanowire mosfets |
callnumber |
QD1-999 |
title_auth |
Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs |
abstract |
A 16-nm-L<sub<g</sub< p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias. |
abstractGer |
A 16-nm-L<sub<g</sub< p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias. |
abstract_unstemmed |
A 16-nm-L<sub<g</sub< p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias. |
collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 |
container_issue |
2, p 309 |
title_short |
Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs |
url |
https://doi.org/10.3390/nano11020309 https://doaj.org/article/abc7abddcd4f42e4989faa93ad80468b https://www.mdpi.com/2079-4991/11/2/309 https://doaj.org/toc/2079-4991 |
remote_bool |
true |
author2 |
Qingzhu Zhang Zhenhua Wu Jiaxin Yao Zhaohao Zhang Xiaohui Zhu Guilei Wang Junjie Li Yongkui Zhang Yuwei Cai Renren Xu Gaobo Xu Qiuxia Xu Huaxiang Yin Jun Luo Wenwu Wang Tianchun Ye |
author2Str |
Qingzhu Zhang Zhenhua Wu Jiaxin Yao Zhaohao Zhang Xiaohui Zhu Guilei Wang Junjie Li Yongkui Zhang Yuwei Cai Renren Xu Gaobo Xu Qiuxia Xu Huaxiang Yin Jun Luo Wenwu Wang Tianchun Ye |
ppnlink |
718627199 |
callnumber-subject |
QD - Chemistry |
mediatype_str_mv |
c |
isOA_txt |
true |
hochschulschrift_bool |
false |
doi_str |
10.3390/nano11020309 |
callnumber-a |
QD1-999 |
up_date |
2024-07-03T15:18:54.475Z |
_version_ |
1803571622808911872 |
fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ057986207</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20240414072147.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230227s2021 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.3390/nano11020309</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ057986207</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJabc7abddcd4f42e4989faa93ad80468b</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QD1-999</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Jie Gu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2021</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">A 16-nm-L<sub<g</sub< p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">gate-all-around</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Si nanowire</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">cryo-CMOS</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">one-dimensional hole transport</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Chemistry</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Qingzhu Zhang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Zhenhua Wu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Jiaxin Yao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Zhaohao Zhang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Xiaohui Zhu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Guilei Wang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Junjie Li</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Yongkui Zhang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Yuwei Cai</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Renren Xu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Gaobo Xu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Qiuxia Xu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Huaxiang Yin</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Jun Luo</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Wenwu Wang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Tianchun Ye</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">Nanomaterials</subfield><subfield code="d">MDPI AG, 2012</subfield><subfield code="g">11(2021), 2, p 309</subfield><subfield code="w">(DE-627)718627199</subfield><subfield code="w">(DE-600)2662255-5</subfield><subfield code="x">20794991</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:11</subfield><subfield code="g">year:2021</subfield><subfield code="g">number:2, p 309</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.3390/nano11020309</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/abc7abddcd4f42e4989faa93ad80468b</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://www.mdpi.com/2079-4991/11/2/309</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2079-4991</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2108</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2119</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">11</subfield><subfield code="j">2021</subfield><subfield code="e">2, p 309</subfield></datafield></record></collection>
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score |
7.3998337 |