High-Isolation Diplexer With High Frequency Selectivity Using Substrate Integrate Waveguide Dual-Mode Resonator

Two novel substrate integrated waveguide (SIW) high-isolation dual-mode diplexers based on electromagnetic perturbation technology have been presented in this paper. The capacitive perturbation and inductive perturbation have been introduced in the presented dual-mode diplexers. Furthermore, this pe...
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Autor*in:	Kaijun Song [verfasserIn] Yedi Zhou [verfasserIn] Yuxuan Chen [verfasserIn] Abdiqani Mohamed Iman [verfasserIn] Shema Richard Patience [verfasserIn] Yong Fan [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2019

Schlagwörter:	Diplexer high isolation substrate integrated waveguide (SIW) high frequency selectivity dual-mode resonator

Übergeordnetes Werk:	In: IEEE Access - IEEE, 2014, 7(2019), Seite 116676-116683
Übergeordnetes Werk:	volume:7 ; year:2019 ; pages:116676-116683

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.1109/ACCESS.2019.2926121

Katalog-ID:	DOAJ059318643

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520			\|a Two novel substrate integrated waveguide (SIW) high-isolation dual-mode diplexers based on electromagnetic perturbation technology have been presented in this paper. The capacitive perturbation and inductive perturbation have been introduced in the presented dual-mode diplexers. Furthermore, this perturbation can produce two transmission zeros in the real frequency axis, and those transmission zeros in the real frequency axis can improve the frequency selectivity of each channel of the diplexer and the isolation between two channels. Two different SIW dual-mode diplexers have been designed, fabricated, and measured. The measured insertion losses at each center frequency are 2.2 and 2.4 dB for the diplexer 1, 1.8, and 1.5 dB for the diplexer 2, with the fractional bandwidths of 1.95% and 2.08% for the diplexer 1 and 1.94% and 2.05% for the diplexer 2. The isolation is greater than 45 dB. Reasonable agreement between the simulated and measured results is achieved for the proposed dual-mode SIW diplexers.
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allfields	10.1109/ACCESS.2019.2926121 doi (DE-627)DOAJ059318643 (DE-599)DOAJ9d244a4694044647bee935827b75da35 DE-627 ger DE-627 rakwb eng TK1-9971 Kaijun Song verfasserin aut High-Isolation Diplexer With High Frequency Selectivity Using Substrate Integrate Waveguide Dual-Mode Resonator 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Two novel substrate integrated waveguide (SIW) high-isolation dual-mode diplexers based on electromagnetic perturbation technology have been presented in this paper. The capacitive perturbation and inductive perturbation have been introduced in the presented dual-mode diplexers. Furthermore, this perturbation can produce two transmission zeros in the real frequency axis, and those transmission zeros in the real frequency axis can improve the frequency selectivity of each channel of the diplexer and the isolation between two channels. Two different SIW dual-mode diplexers have been designed, fabricated, and measured. The measured insertion losses at each center frequency are 2.2 and 2.4 dB for the diplexer 1, 1.8, and 1.5 dB for the diplexer 2, with the fractional bandwidths of 1.95% and 2.08% for the diplexer 1 and 1.94% and 2.05% for the diplexer 2. The isolation is greater than 45 dB. Reasonable agreement between the simulated and measured results is achieved for the proposed dual-mode SIW diplexers. Diplexer high isolation substrate integrated waveguide (SIW) high frequency selectivity dual-mode resonator Electrical engineering. Electronics. Nuclear engineering Yedi Zhou verfasserin aut Yuxuan Chen verfasserin aut Abdiqani Mohamed Iman verfasserin aut Shema Richard Patience verfasserin aut Yong Fan verfasserin aut In IEEE Access IEEE, 2014 7(2019), Seite 116676-116683 (DE-627)728440385 (DE-600)2687964-5 21693536 nnns volume:7 year:2019 pages:116676-116683 https://doi.org/10.1109/ACCESS.2019.2926121 kostenfrei https://doaj.org/article/9d244a4694044647bee935827b75da35 kostenfrei https://ieeexplore.ieee.org/document/8752406/ kostenfrei https://doaj.org/toc/2169-3536 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 7 2019 116676-116683
spelling	10.1109/ACCESS.2019.2926121 doi (DE-627)DOAJ059318643 (DE-599)DOAJ9d244a4694044647bee935827b75da35 DE-627 ger DE-627 rakwb eng TK1-9971 Kaijun Song verfasserin aut High-Isolation Diplexer With High Frequency Selectivity Using Substrate Integrate Waveguide Dual-Mode Resonator 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Two novel substrate integrated waveguide (SIW) high-isolation dual-mode diplexers based on electromagnetic perturbation technology have been presented in this paper. The capacitive perturbation and inductive perturbation have been introduced in the presented dual-mode diplexers. Furthermore, this perturbation can produce two transmission zeros in the real frequency axis, and those transmission zeros in the real frequency axis can improve the frequency selectivity of each channel of the diplexer and the isolation between two channels. Two different SIW dual-mode diplexers have been designed, fabricated, and measured. The measured insertion losses at each center frequency are 2.2 and 2.4 dB for the diplexer 1, 1.8, and 1.5 dB for the diplexer 2, with the fractional bandwidths of 1.95% and 2.08% for the diplexer 1 and 1.94% and 2.05% for the diplexer 2. The isolation is greater than 45 dB. Reasonable agreement between the simulated and measured results is achieved for the proposed dual-mode SIW diplexers. Diplexer high isolation substrate integrated waveguide (SIW) high frequency selectivity dual-mode resonator Electrical engineering. Electronics. Nuclear engineering Yedi Zhou verfasserin aut Yuxuan Chen verfasserin aut Abdiqani Mohamed Iman verfasserin aut Shema Richard Patience verfasserin aut Yong Fan verfasserin aut In IEEE Access IEEE, 2014 7(2019), Seite 116676-116683 (DE-627)728440385 (DE-600)2687964-5 21693536 nnns volume:7 year:2019 pages:116676-116683 https://doi.org/10.1109/ACCESS.2019.2926121 kostenfrei https://doaj.org/article/9d244a4694044647bee935827b75da35 kostenfrei https://ieeexplore.ieee.org/document/8752406/ kostenfrei https://doaj.org/toc/2169-3536 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 7 2019 116676-116683
allfields_unstemmed	10.1109/ACCESS.2019.2926121 doi (DE-627)DOAJ059318643 (DE-599)DOAJ9d244a4694044647bee935827b75da35 DE-627 ger DE-627 rakwb eng TK1-9971 Kaijun Song verfasserin aut High-Isolation Diplexer With High Frequency Selectivity Using Substrate Integrate Waveguide Dual-Mode Resonator 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Two novel substrate integrated waveguide (SIW) high-isolation dual-mode diplexers based on electromagnetic perturbation technology have been presented in this paper. The capacitive perturbation and inductive perturbation have been introduced in the presented dual-mode diplexers. Furthermore, this perturbation can produce two transmission zeros in the real frequency axis, and those transmission zeros in the real frequency axis can improve the frequency selectivity of each channel of the diplexer and the isolation between two channels. Two different SIW dual-mode diplexers have been designed, fabricated, and measured. The measured insertion losses at each center frequency are 2.2 and 2.4 dB for the diplexer 1, 1.8, and 1.5 dB for the diplexer 2, with the fractional bandwidths of 1.95% and 2.08% for the diplexer 1 and 1.94% and 2.05% for the diplexer 2. The isolation is greater than 45 dB. Reasonable agreement between the simulated and measured results is achieved for the proposed dual-mode SIW diplexers. Diplexer high isolation substrate integrated waveguide (SIW) high frequency selectivity dual-mode resonator Electrical engineering. Electronics. Nuclear engineering Yedi Zhou verfasserin aut Yuxuan Chen verfasserin aut Abdiqani Mohamed Iman verfasserin aut Shema Richard Patience verfasserin aut Yong Fan verfasserin aut In IEEE Access IEEE, 2014 7(2019), Seite 116676-116683 (DE-627)728440385 (DE-600)2687964-5 21693536 nnns volume:7 year:2019 pages:116676-116683 https://doi.org/10.1109/ACCESS.2019.2926121 kostenfrei https://doaj.org/article/9d244a4694044647bee935827b75da35 kostenfrei https://ieeexplore.ieee.org/document/8752406/ kostenfrei https://doaj.org/toc/2169-3536 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 7 2019 116676-116683
allfieldsGer	10.1109/ACCESS.2019.2926121 doi (DE-627)DOAJ059318643 (DE-599)DOAJ9d244a4694044647bee935827b75da35 DE-627 ger DE-627 rakwb eng TK1-9971 Kaijun Song verfasserin aut High-Isolation Diplexer With High Frequency Selectivity Using Substrate Integrate Waveguide Dual-Mode Resonator 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Two novel substrate integrated waveguide (SIW) high-isolation dual-mode diplexers based on electromagnetic perturbation technology have been presented in this paper. The capacitive perturbation and inductive perturbation have been introduced in the presented dual-mode diplexers. Furthermore, this perturbation can produce two transmission zeros in the real frequency axis, and those transmission zeros in the real frequency axis can improve the frequency selectivity of each channel of the diplexer and the isolation between two channels. Two different SIW dual-mode diplexers have been designed, fabricated, and measured. The measured insertion losses at each center frequency are 2.2 and 2.4 dB for the diplexer 1, 1.8, and 1.5 dB for the diplexer 2, with the fractional bandwidths of 1.95% and 2.08% for the diplexer 1 and 1.94% and 2.05% for the diplexer 2. The isolation is greater than 45 dB. Reasonable agreement between the simulated and measured results is achieved for the proposed dual-mode SIW diplexers. Diplexer high isolation substrate integrated waveguide (SIW) high frequency selectivity dual-mode resonator Electrical engineering. Electronics. Nuclear engineering Yedi Zhou verfasserin aut Yuxuan Chen verfasserin aut Abdiqani Mohamed Iman verfasserin aut Shema Richard Patience verfasserin aut Yong Fan verfasserin aut In IEEE Access IEEE, 2014 7(2019), Seite 116676-116683 (DE-627)728440385 (DE-600)2687964-5 21693536 nnns volume:7 year:2019 pages:116676-116683 https://doi.org/10.1109/ACCESS.2019.2926121 kostenfrei https://doaj.org/article/9d244a4694044647bee935827b75da35 kostenfrei https://ieeexplore.ieee.org/document/8752406/ kostenfrei https://doaj.org/toc/2169-3536 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 7 2019 116676-116683
allfieldsSound	10.1109/ACCESS.2019.2926121 doi (DE-627)DOAJ059318643 (DE-599)DOAJ9d244a4694044647bee935827b75da35 DE-627 ger DE-627 rakwb eng TK1-9971 Kaijun Song verfasserin aut High-Isolation Diplexer With High Frequency Selectivity Using Substrate Integrate Waveguide Dual-Mode Resonator 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Two novel substrate integrated waveguide (SIW) high-isolation dual-mode diplexers based on electromagnetic perturbation technology have been presented in this paper. The capacitive perturbation and inductive perturbation have been introduced in the presented dual-mode diplexers. Furthermore, this perturbation can produce two transmission zeros in the real frequency axis, and those transmission zeros in the real frequency axis can improve the frequency selectivity of each channel of the diplexer and the isolation between two channels. Two different SIW dual-mode diplexers have been designed, fabricated, and measured. The measured insertion losses at each center frequency are 2.2 and 2.4 dB for the diplexer 1, 1.8, and 1.5 dB for the diplexer 2, with the fractional bandwidths of 1.95% and 2.08% for the diplexer 1 and 1.94% and 2.05% for the diplexer 2. The isolation is greater than 45 dB. Reasonable agreement between the simulated and measured results is achieved for the proposed dual-mode SIW diplexers. Diplexer high isolation substrate integrated waveguide (SIW) high frequency selectivity dual-mode resonator Electrical engineering. Electronics. Nuclear engineering Yedi Zhou verfasserin aut Yuxuan Chen verfasserin aut Abdiqani Mohamed Iman verfasserin aut Shema Richard Patience verfasserin aut Yong Fan verfasserin aut In IEEE Access IEEE, 2014 7(2019), Seite 116676-116683 (DE-627)728440385 (DE-600)2687964-5 21693536 nnns volume:7 year:2019 pages:116676-116683 https://doi.org/10.1109/ACCESS.2019.2926121 kostenfrei https://doaj.org/article/9d244a4694044647bee935827b75da35 kostenfrei https://ieeexplore.ieee.org/document/8752406/ kostenfrei https://doaj.org/toc/2169-3536 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 7 2019 116676-116683
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callnumber-first	T - Technology
author	Kaijun Song
spellingShingle	Kaijun Song misc TK1-9971 misc Diplexer misc high isolation misc substrate integrated waveguide (SIW) misc high frequency selectivity misc dual-mode resonator misc Electrical engineering. Electronics. Nuclear engineering High-Isolation Diplexer With High Frequency Selectivity Using Substrate Integrate Waveguide Dual-Mode Resonator
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topic_title	TK1-9971 High-Isolation Diplexer With High Frequency Selectivity Using Substrate Integrate Waveguide Dual-Mode Resonator Diplexer high isolation substrate integrated waveguide (SIW) high frequency selectivity dual-mode resonator
topic	misc TK1-9971 misc Diplexer misc high isolation misc substrate integrated waveguide (SIW) misc high frequency selectivity misc dual-mode resonator misc Electrical engineering. Electronics. Nuclear engineering
topic_unstemmed	misc TK1-9971 misc Diplexer misc high isolation misc substrate integrated waveguide (SIW) misc high frequency selectivity misc dual-mode resonator misc Electrical engineering. Electronics. Nuclear engineering
topic_browse	misc TK1-9971 misc Diplexer misc high isolation misc substrate integrated waveguide (SIW) misc high frequency selectivity misc dual-mode resonator misc Electrical engineering. Electronics. Nuclear engineering
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title	High-Isolation Diplexer With High Frequency Selectivity Using Substrate Integrate Waveguide Dual-Mode Resonator
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title_full	High-Isolation Diplexer With High Frequency Selectivity Using Substrate Integrate Waveguide Dual-Mode Resonator
author_sort	Kaijun Song
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title_sort	high-isolation diplexer with high frequency selectivity using substrate integrate waveguide dual-mode resonator
callnumber	TK1-9971
title_auth	High-Isolation Diplexer With High Frequency Selectivity Using Substrate Integrate Waveguide Dual-Mode Resonator
abstract	Two novel substrate integrated waveguide (SIW) high-isolation dual-mode diplexers based on electromagnetic perturbation technology have been presented in this paper. The capacitive perturbation and inductive perturbation have been introduced in the presented dual-mode diplexers. Furthermore, this perturbation can produce two transmission zeros in the real frequency axis, and those transmission zeros in the real frequency axis can improve the frequency selectivity of each channel of the diplexer and the isolation between two channels. Two different SIW dual-mode diplexers have been designed, fabricated, and measured. The measured insertion losses at each center frequency are 2.2 and 2.4 dB for the diplexer 1, 1.8, and 1.5 dB for the diplexer 2, with the fractional bandwidths of 1.95% and 2.08% for the diplexer 1 and 1.94% and 2.05% for the diplexer 2. The isolation is greater than 45 dB. Reasonable agreement between the simulated and measured results is achieved for the proposed dual-mode SIW diplexers.
abstractGer	Two novel substrate integrated waveguide (SIW) high-isolation dual-mode diplexers based on electromagnetic perturbation technology have been presented in this paper. The capacitive perturbation and inductive perturbation have been introduced in the presented dual-mode diplexers. Furthermore, this perturbation can produce two transmission zeros in the real frequency axis, and those transmission zeros in the real frequency axis can improve the frequency selectivity of each channel of the diplexer and the isolation between two channels. Two different SIW dual-mode diplexers have been designed, fabricated, and measured. The measured insertion losses at each center frequency are 2.2 and 2.4 dB for the diplexer 1, 1.8, and 1.5 dB for the diplexer 2, with the fractional bandwidths of 1.95% and 2.08% for the diplexer 1 and 1.94% and 2.05% for the diplexer 2. The isolation is greater than 45 dB. Reasonable agreement between the simulated and measured results is achieved for the proposed dual-mode SIW diplexers.
abstract_unstemmed	Two novel substrate integrated waveguide (SIW) high-isolation dual-mode diplexers based on electromagnetic perturbation technology have been presented in this paper. The capacitive perturbation and inductive perturbation have been introduced in the presented dual-mode diplexers. Furthermore, this perturbation can produce two transmission zeros in the real frequency axis, and those transmission zeros in the real frequency axis can improve the frequency selectivity of each channel of the diplexer and the isolation between two channels. Two different SIW dual-mode diplexers have been designed, fabricated, and measured. The measured insertion losses at each center frequency are 2.2 and 2.4 dB for the diplexer 1, 1.8, and 1.5 dB for the diplexer 2, with the fractional bandwidths of 1.95% and 2.08% for the diplexer 1 and 1.94% and 2.05% for the diplexer 2. The isolation is greater than 45 dB. Reasonable agreement between the simulated and measured results is achieved for the proposed dual-mode SIW diplexers.
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title_short	High-Isolation Diplexer With High Frequency Selectivity Using Substrate Integrate Waveguide Dual-Mode Resonator
url	https://doi.org/10.1109/ACCESS.2019.2926121 https://doaj.org/article/9d244a4694044647bee935827b75da35 https://ieeexplore.ieee.org/document/8752406/ https://doaj.org/toc/2169-3536
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author2	Yedi Zhou Yuxuan Chen Abdiqani Mohamed Iman Shema Richard Patience Yong Fan
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High-Isolation Diplexer With High Frequency Selectivity Using Substrate Integrate Waveguide Dual-Mode Resonator

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