Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO2 Gate Dielectric

In this report, we demonstrated a reliable switching effect of carbon nanotube (CNT) field-effect transistor (FET) devices integrated with 99% semiconducting CNT as a channel and high-k oxide as the dielectric. CNT FET devices with high-k oxides of Al-ZrHfO2 and Al2O3 were electrically characterized...
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Autor*in:	Seyoung Oh [verfasserIn] Seung Won Lee [verfasserIn] Dongjun Kim [verfasserIn] Jeong-Hun Choi [verfasserIn] Hong-Chul Chae [verfasserIn] Sung Mook Choi [verfasserIn] Ji-Hoon Ahn [verfasserIn] Byungjin Cho [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2018

Übergeordnetes Werk:	In: Journal of Nanomaterials - Hindawi Limited, 2006, (2018)
Übergeordnetes Werk:	year:2018

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc Journal toc

DOI / URN:	10.1155/2018/2156895

Katalog-ID:	DOAJ060144750

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520			\|a In this report, we demonstrated a reliable switching effect of carbon nanotube (CNT) field-effect transistor (FET) devices integrated with 99% semiconducting CNT as a channel and high-k oxide as the dielectric. CNT FET devices with high-k oxides of Al-ZrHfO2 and Al2O3 were electrically characterized and compared. There was no considerable hysteresis in the Al2O3-based CNT FET device. The Al-ZrHfO2 with a tetragonal phase-based high dielectric constant (~47), designed by an atomic layer deposition process, showed a reliable switching effect as well as low operation voltage (<±3 V). Charge trapping/detrapping process via oxygen vacancy-related defects of Al-ZrHfO2 was proposed as a primary mechanism to explain a current change of a counterclockwise direction and threshold voltage (Vth) shift for transfer properties. The suggested charge trapping model within bulk oxide was experimentally proven since the hysteresis from the adsorption/desorption of gas molecules to CNT surface was negligible. Endurance characteristics of the CNT switching devices remained stable without any serious current fluctuation during a repetitive cycling test. The memory device with reliable switching properties as well as low operation power would pave a road toward next-generation memory components of portable electronic gadgets.
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700	0		\|a Byungjin Cho \|e verfasserin \|4 aut
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allfields	10.1155/2018/2156895 doi (DE-627)DOAJ060144750 (DE-599)DOAJ815caf3b7dfd4f2999eb511e91b541e2 DE-627 ger DE-627 rakwb eng T1-995 Seyoung Oh verfasserin aut Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO2 Gate Dielectric 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this report, we demonstrated a reliable switching effect of carbon nanotube (CNT) field-effect transistor (FET) devices integrated with 99% semiconducting CNT as a channel and high-k oxide as the dielectric. CNT FET devices with high-k oxides of Al-ZrHfO2 and Al2O3 were electrically characterized and compared. There was no considerable hysteresis in the Al2O3-based CNT FET device. The Al-ZrHfO2 with a tetragonal phase-based high dielectric constant (~47), designed by an atomic layer deposition process, showed a reliable switching effect as well as low operation voltage (<±3 V). Charge trapping/detrapping process via oxygen vacancy-related defects of Al-ZrHfO2 was proposed as a primary mechanism to explain a current change of a counterclockwise direction and threshold voltage (Vth) shift for transfer properties. The suggested charge trapping model within bulk oxide was experimentally proven since the hysteresis from the adsorption/desorption of gas molecules to CNT surface was negligible. Endurance characteristics of the CNT switching devices remained stable without any serious current fluctuation during a repetitive cycling test. The memory device with reliable switching properties as well as low operation power would pave a road toward next-generation memory components of portable electronic gadgets. Technology (General) Seung Won Lee verfasserin aut Dongjun Kim verfasserin aut Jeong-Hun Choi verfasserin aut Hong-Chul Chae verfasserin aut Sung Mook Choi verfasserin aut Ji-Hoon Ahn verfasserin aut Byungjin Cho verfasserin aut In Journal of Nanomaterials Hindawi Limited, 2006 (2018) (DE-627)510109659 (DE-600)2229480-6 16874129 nnns year:2018 https://doi.org/10.1155/2018/2156895 kostenfrei https://doaj.org/article/815caf3b7dfd4f2999eb511e91b541e2 kostenfrei http://dx.doi.org/10.1155/2018/2156895 kostenfrei https://doaj.org/toc/1687-4110 Journal toc kostenfrei https://doaj.org/toc/1687-4129 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_165 GBV_ILN_170 GBV_ILN_171 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_636 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 2018
spelling	10.1155/2018/2156895 doi (DE-627)DOAJ060144750 (DE-599)DOAJ815caf3b7dfd4f2999eb511e91b541e2 DE-627 ger DE-627 rakwb eng T1-995 Seyoung Oh verfasserin aut Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO2 Gate Dielectric 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this report, we demonstrated a reliable switching effect of carbon nanotube (CNT) field-effect transistor (FET) devices integrated with 99% semiconducting CNT as a channel and high-k oxide as the dielectric. CNT FET devices with high-k oxides of Al-ZrHfO2 and Al2O3 were electrically characterized and compared. There was no considerable hysteresis in the Al2O3-based CNT FET device. The Al-ZrHfO2 with a tetragonal phase-based high dielectric constant (~47), designed by an atomic layer deposition process, showed a reliable switching effect as well as low operation voltage (<±3 V). Charge trapping/detrapping process via oxygen vacancy-related defects of Al-ZrHfO2 was proposed as a primary mechanism to explain a current change of a counterclockwise direction and threshold voltage (Vth) shift for transfer properties. The suggested charge trapping model within bulk oxide was experimentally proven since the hysteresis from the adsorption/desorption of gas molecules to CNT surface was negligible. Endurance characteristics of the CNT switching devices remained stable without any serious current fluctuation during a repetitive cycling test. The memory device with reliable switching properties as well as low operation power would pave a road toward next-generation memory components of portable electronic gadgets. Technology (General) Seung Won Lee verfasserin aut Dongjun Kim verfasserin aut Jeong-Hun Choi verfasserin aut Hong-Chul Chae verfasserin aut Sung Mook Choi verfasserin aut Ji-Hoon Ahn verfasserin aut Byungjin Cho verfasserin aut In Journal of Nanomaterials Hindawi Limited, 2006 (2018) (DE-627)510109659 (DE-600)2229480-6 16874129 nnns year:2018 https://doi.org/10.1155/2018/2156895 kostenfrei https://doaj.org/article/815caf3b7dfd4f2999eb511e91b541e2 kostenfrei http://dx.doi.org/10.1155/2018/2156895 kostenfrei https://doaj.org/toc/1687-4110 Journal toc kostenfrei https://doaj.org/toc/1687-4129 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_165 GBV_ILN_170 GBV_ILN_171 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_636 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 2018
allfields_unstemmed	10.1155/2018/2156895 doi (DE-627)DOAJ060144750 (DE-599)DOAJ815caf3b7dfd4f2999eb511e91b541e2 DE-627 ger DE-627 rakwb eng T1-995 Seyoung Oh verfasserin aut Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO2 Gate Dielectric 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this report, we demonstrated a reliable switching effect of carbon nanotube (CNT) field-effect transistor (FET) devices integrated with 99% semiconducting CNT as a channel and high-k oxide as the dielectric. CNT FET devices with high-k oxides of Al-ZrHfO2 and Al2O3 were electrically characterized and compared. There was no considerable hysteresis in the Al2O3-based CNT FET device. The Al-ZrHfO2 with a tetragonal phase-based high dielectric constant (~47), designed by an atomic layer deposition process, showed a reliable switching effect as well as low operation voltage (<±3 V). Charge trapping/detrapping process via oxygen vacancy-related defects of Al-ZrHfO2 was proposed as a primary mechanism to explain a current change of a counterclockwise direction and threshold voltage (Vth) shift for transfer properties. The suggested charge trapping model within bulk oxide was experimentally proven since the hysteresis from the adsorption/desorption of gas molecules to CNT surface was negligible. Endurance characteristics of the CNT switching devices remained stable without any serious current fluctuation during a repetitive cycling test. The memory device with reliable switching properties as well as low operation power would pave a road toward next-generation memory components of portable electronic gadgets. Technology (General) Seung Won Lee verfasserin aut Dongjun Kim verfasserin aut Jeong-Hun Choi verfasserin aut Hong-Chul Chae verfasserin aut Sung Mook Choi verfasserin aut Ji-Hoon Ahn verfasserin aut Byungjin Cho verfasserin aut In Journal of Nanomaterials Hindawi Limited, 2006 (2018) (DE-627)510109659 (DE-600)2229480-6 16874129 nnns year:2018 https://doi.org/10.1155/2018/2156895 kostenfrei https://doaj.org/article/815caf3b7dfd4f2999eb511e91b541e2 kostenfrei http://dx.doi.org/10.1155/2018/2156895 kostenfrei https://doaj.org/toc/1687-4110 Journal toc kostenfrei https://doaj.org/toc/1687-4129 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_165 GBV_ILN_170 GBV_ILN_171 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_636 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 2018
allfieldsGer	10.1155/2018/2156895 doi (DE-627)DOAJ060144750 (DE-599)DOAJ815caf3b7dfd4f2999eb511e91b541e2 DE-627 ger DE-627 rakwb eng T1-995 Seyoung Oh verfasserin aut Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO2 Gate Dielectric 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this report, we demonstrated a reliable switching effect of carbon nanotube (CNT) field-effect transistor (FET) devices integrated with 99% semiconducting CNT as a channel and high-k oxide as the dielectric. CNT FET devices with high-k oxides of Al-ZrHfO2 and Al2O3 were electrically characterized and compared. There was no considerable hysteresis in the Al2O3-based CNT FET device. The Al-ZrHfO2 with a tetragonal phase-based high dielectric constant (~47), designed by an atomic layer deposition process, showed a reliable switching effect as well as low operation voltage (<±3 V). Charge trapping/detrapping process via oxygen vacancy-related defects of Al-ZrHfO2 was proposed as a primary mechanism to explain a current change of a counterclockwise direction and threshold voltage (Vth) shift for transfer properties. The suggested charge trapping model within bulk oxide was experimentally proven since the hysteresis from the adsorption/desorption of gas molecules to CNT surface was negligible. Endurance characteristics of the CNT switching devices remained stable without any serious current fluctuation during a repetitive cycling test. The memory device with reliable switching properties as well as low operation power would pave a road toward next-generation memory components of portable electronic gadgets. Technology (General) Seung Won Lee verfasserin aut Dongjun Kim verfasserin aut Jeong-Hun Choi verfasserin aut Hong-Chul Chae verfasserin aut Sung Mook Choi verfasserin aut Ji-Hoon Ahn verfasserin aut Byungjin Cho verfasserin aut In Journal of Nanomaterials Hindawi Limited, 2006 (2018) (DE-627)510109659 (DE-600)2229480-6 16874129 nnns year:2018 https://doi.org/10.1155/2018/2156895 kostenfrei https://doaj.org/article/815caf3b7dfd4f2999eb511e91b541e2 kostenfrei http://dx.doi.org/10.1155/2018/2156895 kostenfrei https://doaj.org/toc/1687-4110 Journal toc kostenfrei https://doaj.org/toc/1687-4129 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_165 GBV_ILN_170 GBV_ILN_171 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_636 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 2018
allfieldsSound	10.1155/2018/2156895 doi (DE-627)DOAJ060144750 (DE-599)DOAJ815caf3b7dfd4f2999eb511e91b541e2 DE-627 ger DE-627 rakwb eng T1-995 Seyoung Oh verfasserin aut Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO2 Gate Dielectric 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this report, we demonstrated a reliable switching effect of carbon nanotube (CNT) field-effect transistor (FET) devices integrated with 99% semiconducting CNT as a channel and high-k oxide as the dielectric. CNT FET devices with high-k oxides of Al-ZrHfO2 and Al2O3 were electrically characterized and compared. There was no considerable hysteresis in the Al2O3-based CNT FET device. The Al-ZrHfO2 with a tetragonal phase-based high dielectric constant (~47), designed by an atomic layer deposition process, showed a reliable switching effect as well as low operation voltage (<±3 V). Charge trapping/detrapping process via oxygen vacancy-related defects of Al-ZrHfO2 was proposed as a primary mechanism to explain a current change of a counterclockwise direction and threshold voltage (Vth) shift for transfer properties. The suggested charge trapping model within bulk oxide was experimentally proven since the hysteresis from the adsorption/desorption of gas molecules to CNT surface was negligible. Endurance characteristics of the CNT switching devices remained stable without any serious current fluctuation during a repetitive cycling test. The memory device with reliable switching properties as well as low operation power would pave a road toward next-generation memory components of portable electronic gadgets. Technology (General) Seung Won Lee verfasserin aut Dongjun Kim verfasserin aut Jeong-Hun Choi verfasserin aut Hong-Chul Chae verfasserin aut Sung Mook Choi verfasserin aut Ji-Hoon Ahn verfasserin aut Byungjin Cho verfasserin aut In Journal of Nanomaterials Hindawi Limited, 2006 (2018) (DE-627)510109659 (DE-600)2229480-6 16874129 nnns year:2018 https://doi.org/10.1155/2018/2156895 kostenfrei https://doaj.org/article/815caf3b7dfd4f2999eb511e91b541e2 kostenfrei http://dx.doi.org/10.1155/2018/2156895 kostenfrei https://doaj.org/toc/1687-4110 Journal toc kostenfrei https://doaj.org/toc/1687-4129 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_165 GBV_ILN_170 GBV_ILN_171 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_636 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 2018
language	English
source	In Journal of Nanomaterials (2018) year:2018
sourceStr	In Journal of Nanomaterials (2018) year:2018
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Technology (General)
isfreeaccess_bool	true
container_title	Journal of Nanomaterials
authorswithroles_txt_mv	Seyoung Oh @@aut@@ Seung Won Lee @@aut@@ Dongjun Kim @@aut@@ Jeong-Hun Choi @@aut@@ Hong-Chul Chae @@aut@@ Sung Mook Choi @@aut@@ Ji-Hoon Ahn @@aut@@ Byungjin Cho @@aut@@
publishDateDaySort_date	2018-01-01T00:00:00Z
hierarchy_top_id	510109659
id	DOAJ060144750
language_de	englisch
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author	Seyoung Oh
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topic_title	T1-995 Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO2 Gate Dielectric
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title	Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO2 Gate Dielectric
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title_full	Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO2 Gate Dielectric
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title_sort	low power switching characteristics of cnt field effect transistor device with al-doped zrhfo2 gate dielectric
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title_auth	Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO2 Gate Dielectric
abstract	In this report, we demonstrated a reliable switching effect of carbon nanotube (CNT) field-effect transistor (FET) devices integrated with 99% semiconducting CNT as a channel and high-k oxide as the dielectric. CNT FET devices with high-k oxides of Al-ZrHfO2 and Al2O3 were electrically characterized and compared. There was no considerable hysteresis in the Al2O3-based CNT FET device. The Al-ZrHfO2 with a tetragonal phase-based high dielectric constant (~47), designed by an atomic layer deposition process, showed a reliable switching effect as well as low operation voltage (<±3 V). Charge trapping/detrapping process via oxygen vacancy-related defects of Al-ZrHfO2 was proposed as a primary mechanism to explain a current change of a counterclockwise direction and threshold voltage (Vth) shift for transfer properties. The suggested charge trapping model within bulk oxide was experimentally proven since the hysteresis from the adsorption/desorption of gas molecules to CNT surface was negligible. Endurance characteristics of the CNT switching devices remained stable without any serious current fluctuation during a repetitive cycling test. The memory device with reliable switching properties as well as low operation power would pave a road toward next-generation memory components of portable electronic gadgets.
abstractGer	In this report, we demonstrated a reliable switching effect of carbon nanotube (CNT) field-effect transistor (FET) devices integrated with 99% semiconducting CNT as a channel and high-k oxide as the dielectric. CNT FET devices with high-k oxides of Al-ZrHfO2 and Al2O3 were electrically characterized and compared. There was no considerable hysteresis in the Al2O3-based CNT FET device. The Al-ZrHfO2 with a tetragonal phase-based high dielectric constant (~47), designed by an atomic layer deposition process, showed a reliable switching effect as well as low operation voltage (<±3 V). Charge trapping/detrapping process via oxygen vacancy-related defects of Al-ZrHfO2 was proposed as a primary mechanism to explain a current change of a counterclockwise direction and threshold voltage (Vth) shift for transfer properties. The suggested charge trapping model within bulk oxide was experimentally proven since the hysteresis from the adsorption/desorption of gas molecules to CNT surface was negligible. Endurance characteristics of the CNT switching devices remained stable without any serious current fluctuation during a repetitive cycling test. The memory device with reliable switching properties as well as low operation power would pave a road toward next-generation memory components of portable electronic gadgets.
abstract_unstemmed	In this report, we demonstrated a reliable switching effect of carbon nanotube (CNT) field-effect transistor (FET) devices integrated with 99% semiconducting CNT as a channel and high-k oxide as the dielectric. CNT FET devices with high-k oxides of Al-ZrHfO2 and Al2O3 were electrically characterized and compared. There was no considerable hysteresis in the Al2O3-based CNT FET device. The Al-ZrHfO2 with a tetragonal phase-based high dielectric constant (~47), designed by an atomic layer deposition process, showed a reliable switching effect as well as low operation voltage (<±3 V). Charge trapping/detrapping process via oxygen vacancy-related defects of Al-ZrHfO2 was proposed as a primary mechanism to explain a current change of a counterclockwise direction and threshold voltage (Vth) shift for transfer properties. The suggested charge trapping model within bulk oxide was experimentally proven since the hysteresis from the adsorption/desorption of gas molecules to CNT surface was negligible. Endurance characteristics of the CNT switching devices remained stable without any serious current fluctuation during a repetitive cycling test. The memory device with reliable switching properties as well as low operation power would pave a road toward next-generation memory components of portable electronic gadgets.
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title_short	Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO2 Gate Dielectric
url	https://doi.org/10.1155/2018/2156895 https://doaj.org/article/815caf3b7dfd4f2999eb511e91b541e2 http://dx.doi.org/10.1155/2018/2156895 https://doaj.org/toc/1687-4110 https://doaj.org/toc/1687-4129
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Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO2 Gate Dielectric

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