Marker Method in Studying the Defect Structure in Products of the Oxidation of Highly Disordered Substrates

The interpretation of marker experiments in studying the formation mechanism and defect structure of higher oxides during oxidation of lower oxides, showing rather high deviations from stoichiometry, has been discussed. It has been shown that correct results can be obtained only if the concentration...
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Autor*in:	Grzesik Z. [verfasserIn] Poczekajlo A. [verfasserIn] Smola G. [verfasserIn] Mrowec S. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2016

Schlagwörter:	marker technique nonstoichiometry interpretation 81.65.mq – oxidation

Übergeordnetes Werk:	In: High Temperature Materials and Processes - De Gruyter, 2020, 35(2016), 1, Seite 21-28
Übergeordnetes Werk:	volume:35 ; year:2016 ; number:1 ; pages:21-28

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc Journal toc

DOI / URN:	10.1515/htmp-2014-0152

Katalog-ID:	DOAJ06047680X

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spellingShingle	Grzesik Z. misc TP1-1185 misc TP200-248 misc marker technique misc nonstoichiometry misc interpretation misc 81.65.mq – oxidation misc Technology misc T misc Chemical technology misc Chemicals: Manufacture, use, etc. Marker Method in Studying the Defect Structure in Products of the Oxidation of Highly Disordered Substrates
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topic_title	TP1-1185 TP200-248 Marker Method in Studying the Defect Structure in Products of the Oxidation of Highly Disordered Substrates marker technique nonstoichiometry interpretation 81.65.mq – oxidation
topic	misc TP1-1185 misc TP200-248 misc marker technique misc nonstoichiometry misc interpretation misc 81.65.mq – oxidation misc Technology misc T misc Chemical technology misc Chemicals: Manufacture, use, etc.
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title	Marker Method in Studying the Defect Structure in Products of the Oxidation of Highly Disordered Substrates
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title_sort	marker method in studying the defect structure in products of the oxidation of highly disordered substrates
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title_auth	Marker Method in Studying the Defect Structure in Products of the Oxidation of Highly Disordered Substrates
abstract	The interpretation of marker experiments in studying the formation mechanism and defect structure of higher oxides during oxidation of lower oxides, showing rather high deviations from stoichiometry, has been discussed. It has been shown that correct results can be obtained only if the concentration of point defects in the substrate is taken into account. Theoretical considerations presented in this paper have been illustrated by the experimental results obtained during sulphidation of highly disordered Co1-yS to form CoS2, as well as Ni1-yS to form NiS2.
abstractGer	The interpretation of marker experiments in studying the formation mechanism and defect structure of higher oxides during oxidation of lower oxides, showing rather high deviations from stoichiometry, has been discussed. It has been shown that correct results can be obtained only if the concentration of point defects in the substrate is taken into account. Theoretical considerations presented in this paper have been illustrated by the experimental results obtained during sulphidation of highly disordered Co1-yS to form CoS2, as well as Ni1-yS to form NiS2.
abstract_unstemmed	The interpretation of marker experiments in studying the formation mechanism and defect structure of higher oxides during oxidation of lower oxides, showing rather high deviations from stoichiometry, has been discussed. It has been shown that correct results can be obtained only if the concentration of point defects in the substrate is taken into account. Theoretical considerations presented in this paper have been illustrated by the experimental results obtained during sulphidation of highly disordered Co1-yS to form CoS2, as well as Ni1-yS to form NiS2.
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title_short	Marker Method in Studying the Defect Structure in Products of the Oxidation of Highly Disordered Substrates
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Marker Method in Studying the Defect Structure in Products of the Oxidation of Highly Disordered Substrates

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