Chemically controlled megasonic cleaning of patterned structures using solutions with dissolved gas and surfactant

Acoustic cavitation is used for megasonic cleaning in the semiconductor industry, especially of wafers with fragile pattern structures. Control of transient cavitation is necessary to achieve high particle removal efficiency (PRE) and low pattern damage (PD). In this study, the cleaning performance...
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Autor*in:	Bichitra Nanda Sahoo [verfasserIn] So Young Han [verfasserIn] Hyun-Tae Kim [verfasserIn] Keita Ando [verfasserIn] Tae-Gon Kim [verfasserIn] Bong-Kyun Kang [verfasserIn] Andreas Klipp [verfasserIn] Nagendra Prasad Yerriboina [verfasserIn] Jin-Goo Park [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2022

Schlagwörter:	Megasonic cleaning Particle removal Acoustic bubble cavitation Pattern damage Dissolved gas Surfactant

Übergeordnetes Werk:	In: Ultrasonics Sonochemistry - Elsevier, 2021, 82(2022), Seite 105859-
Übergeordnetes Werk:	volume:82 ; year:2022 ; pages:105859-

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.1016/j.ultsonch.2021.105859

Katalog-ID:	DOAJ061495026

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allfields_unstemmed	10.1016/j.ultsonch.2021.105859 doi (DE-627)DOAJ061495026 (DE-599)DOAJeb5c37e08077416b8d0e1614767cc735 DE-627 ger DE-627 rakwb eng QD1-999 QC221-246 Bichitra Nanda Sahoo verfasserin aut Chemically controlled megasonic cleaning of patterned structures using solutions with dissolved gas and surfactant 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Acoustic cavitation is used for megasonic cleaning in the semiconductor industry, especially of wafers with fragile pattern structures. Control of transient cavitation is necessary to achieve high particle removal efficiency (PRE) and low pattern damage (PD). In this study, the cleaning performance of solutions with different concentrations of dissolved gas (H2) and anionic surfactant (sodium dodecyl sulfate, SDS) in DIW (DI water) on silicon (Si) wafers was evaluated in terms of PRE and PD. When only DIW was used, PRE was low and PD was high. An increase in dissolved H2 gas concentration in DIW increased PRE; however, PD also increased accordingly. Thus, we investigated the megasonic cleaning performance of DIW and H2-DIW solutions with various concentrations of the anionic surfactant, SDS. At 20 ppm SDS in DIW, PRE reached a maximum value and then decreased with increasing concentration of SDS. PRE decreased slightly with increasing concentrations of SDS surfactant when dissolved in H2-DIW. Furthermore, PD decreased significantly with increasing concentrations of SDS surfactant in both DIW and H2-DIW cases. A high-speed camera setup was introduced to analyze bubble dynamics under a 0.96 MHz ultrasonic field. Coalescence, agglomeration, and the population of multi-bubbles affected the PRE and PD of silicon wafers differently in the presence of SDS surfactant. We developed a hypothesis to explain the change in bubble characteristics under different chemical environmental conditions. Megasonic cleaning Particle removal Acoustic bubble cavitation Pattern damage Dissolved gas Surfactant Chemistry Acoustics. Sound So Young Han verfasserin aut Hyun-Tae Kim verfasserin aut Keita Ando verfasserin aut Tae-Gon Kim verfasserin aut Bong-Kyun Kang verfasserin aut Andreas Klipp verfasserin aut Nagendra Prasad Yerriboina verfasserin aut Jin-Goo Park verfasserin aut In Ultrasonics Sonochemistry Elsevier, 2021 82(2022), Seite 105859- (DE-627)306713748 (DE-600)1501094-6 18732828 nnns volume:82 year:2022 pages:105859- https://doi.org/10.1016/j.ultsonch.2021.105859 kostenfrei https://doaj.org/article/eb5c37e08077416b8d0e1614767cc735 kostenfrei http://www.sciencedirect.com/science/article/pii/S1350417721004016 kostenfrei https://doaj.org/toc/1350-4177 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_165 GBV_ILN_170 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2014 GBV_ILN_2025 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 82 2022 105859-
allfieldsGer	10.1016/j.ultsonch.2021.105859 doi (DE-627)DOAJ061495026 (DE-599)DOAJeb5c37e08077416b8d0e1614767cc735 DE-627 ger DE-627 rakwb eng QD1-999 QC221-246 Bichitra Nanda Sahoo verfasserin aut Chemically controlled megasonic cleaning of patterned structures using solutions with dissolved gas and surfactant 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Acoustic cavitation is used for megasonic cleaning in the semiconductor industry, especially of wafers with fragile pattern structures. Control of transient cavitation is necessary to achieve high particle removal efficiency (PRE) and low pattern damage (PD). In this study, the cleaning performance of solutions with different concentrations of dissolved gas (H2) and anionic surfactant (sodium dodecyl sulfate, SDS) in DIW (DI water) on silicon (Si) wafers was evaluated in terms of PRE and PD. When only DIW was used, PRE was low and PD was high. An increase in dissolved H2 gas concentration in DIW increased PRE; however, PD also increased accordingly. Thus, we investigated the megasonic cleaning performance of DIW and H2-DIW solutions with various concentrations of the anionic surfactant, SDS. At 20 ppm SDS in DIW, PRE reached a maximum value and then decreased with increasing concentration of SDS. PRE decreased slightly with increasing concentrations of SDS surfactant when dissolved in H2-DIW. Furthermore, PD decreased significantly with increasing concentrations of SDS surfactant in both DIW and H2-DIW cases. A high-speed camera setup was introduced to analyze bubble dynamics under a 0.96 MHz ultrasonic field. Coalescence, agglomeration, and the population of multi-bubbles affected the PRE and PD of silicon wafers differently in the presence of SDS surfactant. We developed a hypothesis to explain the change in bubble characteristics under different chemical environmental conditions. Megasonic cleaning Particle removal Acoustic bubble cavitation Pattern damage Dissolved gas Surfactant Chemistry Acoustics. Sound So Young Han verfasserin aut Hyun-Tae Kim verfasserin aut Keita Ando verfasserin aut Tae-Gon Kim verfasserin aut Bong-Kyun Kang verfasserin aut Andreas Klipp verfasserin aut Nagendra Prasad Yerriboina verfasserin aut Jin-Goo Park verfasserin aut In Ultrasonics Sonochemistry Elsevier, 2021 82(2022), Seite 105859- (DE-627)306713748 (DE-600)1501094-6 18732828 nnns volume:82 year:2022 pages:105859- https://doi.org/10.1016/j.ultsonch.2021.105859 kostenfrei https://doaj.org/article/eb5c37e08077416b8d0e1614767cc735 kostenfrei http://www.sciencedirect.com/science/article/pii/S1350417721004016 kostenfrei https://doaj.org/toc/1350-4177 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_165 GBV_ILN_170 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2014 GBV_ILN_2025 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 82 2022 105859-
allfieldsSound	10.1016/j.ultsonch.2021.105859 doi (DE-627)DOAJ061495026 (DE-599)DOAJeb5c37e08077416b8d0e1614767cc735 DE-627 ger DE-627 rakwb eng QD1-999 QC221-246 Bichitra Nanda Sahoo verfasserin aut Chemically controlled megasonic cleaning of patterned structures using solutions with dissolved gas and surfactant 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Acoustic cavitation is used for megasonic cleaning in the semiconductor industry, especially of wafers with fragile pattern structures. Control of transient cavitation is necessary to achieve high particle removal efficiency (PRE) and low pattern damage (PD). In this study, the cleaning performance of solutions with different concentrations of dissolved gas (H2) and anionic surfactant (sodium dodecyl sulfate, SDS) in DIW (DI water) on silicon (Si) wafers was evaluated in terms of PRE and PD. When only DIW was used, PRE was low and PD was high. An increase in dissolved H2 gas concentration in DIW increased PRE; however, PD also increased accordingly. Thus, we investigated the megasonic cleaning performance of DIW and H2-DIW solutions with various concentrations of the anionic surfactant, SDS. At 20 ppm SDS in DIW, PRE reached a maximum value and then decreased with increasing concentration of SDS. PRE decreased slightly with increasing concentrations of SDS surfactant when dissolved in H2-DIW. Furthermore, PD decreased significantly with increasing concentrations of SDS surfactant in both DIW and H2-DIW cases. A high-speed camera setup was introduced to analyze bubble dynamics under a 0.96 MHz ultrasonic field. Coalescence, agglomeration, and the population of multi-bubbles affected the PRE and PD of silicon wafers differently in the presence of SDS surfactant. We developed a hypothesis to explain the change in bubble characteristics under different chemical environmental conditions. Megasonic cleaning Particle removal Acoustic bubble cavitation Pattern damage Dissolved gas Surfactant Chemistry Acoustics. Sound So Young Han verfasserin aut Hyun-Tae Kim verfasserin aut Keita Ando verfasserin aut Tae-Gon Kim verfasserin aut Bong-Kyun Kang verfasserin aut Andreas Klipp verfasserin aut Nagendra Prasad Yerriboina verfasserin aut Jin-Goo Park verfasserin aut In Ultrasonics Sonochemistry Elsevier, 2021 82(2022), Seite 105859- (DE-627)306713748 (DE-600)1501094-6 18732828 nnns volume:82 year:2022 pages:105859- https://doi.org/10.1016/j.ultsonch.2021.105859 kostenfrei https://doaj.org/article/eb5c37e08077416b8d0e1614767cc735 kostenfrei http://www.sciencedirect.com/science/article/pii/S1350417721004016 kostenfrei https://doaj.org/toc/1350-4177 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_165 GBV_ILN_170 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2014 GBV_ILN_2025 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 82 2022 105859-
language	English
source	In Ultrasonics Sonochemistry 82(2022), Seite 105859- volume:82 year:2022 pages:105859-
sourceStr	In Ultrasonics Sonochemistry 82(2022), Seite 105859- volume:82 year:2022 pages:105859-
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Megasonic cleaning Particle removal Acoustic bubble cavitation Pattern damage Dissolved gas Surfactant Chemistry Acoustics. Sound
isfreeaccess_bool	true
container_title	Ultrasonics Sonochemistry
authorswithroles_txt_mv	Bichitra Nanda Sahoo @@aut@@ So Young Han @@aut@@ Hyun-Tae Kim @@aut@@ Keita Ando @@aut@@ Tae-Gon Kim @@aut@@ Bong-Kyun Kang @@aut@@ Andreas Klipp @@aut@@ Nagendra Prasad Yerriboina @@aut@@ Jin-Goo Park @@aut@@
publishDateDaySort_date	2022-01-01T00:00:00Z
hierarchy_top_id	306713748
id	DOAJ061495026
language_de	englisch
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callnumber-first	Q - Science
author	Bichitra Nanda Sahoo
spellingShingle	Bichitra Nanda Sahoo misc QD1-999 misc QC221-246 misc Megasonic cleaning misc Particle removal misc Acoustic bubble cavitation misc Pattern damage misc Dissolved gas misc Surfactant misc Chemistry misc Acoustics. Sound Chemically controlled megasonic cleaning of patterned structures using solutions with dissolved gas and surfactant
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topic_title	QD1-999 QC221-246 Chemically controlled megasonic cleaning of patterned structures using solutions with dissolved gas and surfactant Megasonic cleaning Particle removal Acoustic bubble cavitation Pattern damage Dissolved gas Surfactant
topic	misc QD1-999 misc QC221-246 misc Megasonic cleaning misc Particle removal misc Acoustic bubble cavitation misc Pattern damage misc Dissolved gas misc Surfactant misc Chemistry misc Acoustics. Sound
topic_unstemmed	misc QD1-999 misc QC221-246 misc Megasonic cleaning misc Particle removal misc Acoustic bubble cavitation misc Pattern damage misc Dissolved gas misc Surfactant misc Chemistry misc Acoustics. Sound
topic_browse	misc QD1-999 misc QC221-246 misc Megasonic cleaning misc Particle removal misc Acoustic bubble cavitation misc Pattern damage misc Dissolved gas misc Surfactant misc Chemistry misc Acoustics. Sound
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title	Chemically controlled megasonic cleaning of patterned structures using solutions with dissolved gas and surfactant
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title_full	Chemically controlled megasonic cleaning of patterned structures using solutions with dissolved gas and surfactant
author_sort	Bichitra Nanda Sahoo
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author_browse	Bichitra Nanda Sahoo So Young Han Hyun-Tae Kim Keita Ando Tae-Gon Kim Bong-Kyun Kang Andreas Klipp Nagendra Prasad Yerriboina Jin-Goo Park
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doi_str_mv	10.1016/j.ultsonch.2021.105859
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title_sort	chemically controlled megasonic cleaning of patterned structures using solutions with dissolved gas and surfactant
callnumber	QD1-999
title_auth	Chemically controlled megasonic cleaning of patterned structures using solutions with dissolved gas and surfactant
abstract	Acoustic cavitation is used for megasonic cleaning in the semiconductor industry, especially of wafers with fragile pattern structures. Control of transient cavitation is necessary to achieve high particle removal efficiency (PRE) and low pattern damage (PD). In this study, the cleaning performance of solutions with different concentrations of dissolved gas (H2) and anionic surfactant (sodium dodecyl sulfate, SDS) in DIW (DI water) on silicon (Si) wafers was evaluated in terms of PRE and PD. When only DIW was used, PRE was low and PD was high. An increase in dissolved H2 gas concentration in DIW increased PRE; however, PD also increased accordingly. Thus, we investigated the megasonic cleaning performance of DIW and H2-DIW solutions with various concentrations of the anionic surfactant, SDS. At 20 ppm SDS in DIW, PRE reached a maximum value and then decreased with increasing concentration of SDS. PRE decreased slightly with increasing concentrations of SDS surfactant when dissolved in H2-DIW. Furthermore, PD decreased significantly with increasing concentrations of SDS surfactant in both DIW and H2-DIW cases. A high-speed camera setup was introduced to analyze bubble dynamics under a 0.96 MHz ultrasonic field. Coalescence, agglomeration, and the population of multi-bubbles affected the PRE and PD of silicon wafers differently in the presence of SDS surfactant. We developed a hypothesis to explain the change in bubble characteristics under different chemical environmental conditions.
abstractGer	Acoustic cavitation is used for megasonic cleaning in the semiconductor industry, especially of wafers with fragile pattern structures. Control of transient cavitation is necessary to achieve high particle removal efficiency (PRE) and low pattern damage (PD). In this study, the cleaning performance of solutions with different concentrations of dissolved gas (H2) and anionic surfactant (sodium dodecyl sulfate, SDS) in DIW (DI water) on silicon (Si) wafers was evaluated in terms of PRE and PD. When only DIW was used, PRE was low and PD was high. An increase in dissolved H2 gas concentration in DIW increased PRE; however, PD also increased accordingly. Thus, we investigated the megasonic cleaning performance of DIW and H2-DIW solutions with various concentrations of the anionic surfactant, SDS. At 20 ppm SDS in DIW, PRE reached a maximum value and then decreased with increasing concentration of SDS. PRE decreased slightly with increasing concentrations of SDS surfactant when dissolved in H2-DIW. Furthermore, PD decreased significantly with increasing concentrations of SDS surfactant in both DIW and H2-DIW cases. A high-speed camera setup was introduced to analyze bubble dynamics under a 0.96 MHz ultrasonic field. Coalescence, agglomeration, and the population of multi-bubbles affected the PRE and PD of silicon wafers differently in the presence of SDS surfactant. We developed a hypothesis to explain the change in bubble characteristics under different chemical environmental conditions.
abstract_unstemmed	Acoustic cavitation is used for megasonic cleaning in the semiconductor industry, especially of wafers with fragile pattern structures. Control of transient cavitation is necessary to achieve high particle removal efficiency (PRE) and low pattern damage (PD). In this study, the cleaning performance of solutions with different concentrations of dissolved gas (H2) and anionic surfactant (sodium dodecyl sulfate, SDS) in DIW (DI water) on silicon (Si) wafers was evaluated in terms of PRE and PD. When only DIW was used, PRE was low and PD was high. An increase in dissolved H2 gas concentration in DIW increased PRE; however, PD also increased accordingly. Thus, we investigated the megasonic cleaning performance of DIW and H2-DIW solutions with various concentrations of the anionic surfactant, SDS. At 20 ppm SDS in DIW, PRE reached a maximum value and then decreased with increasing concentration of SDS. PRE decreased slightly with increasing concentrations of SDS surfactant when dissolved in H2-DIW. Furthermore, PD decreased significantly with increasing concentrations of SDS surfactant in both DIW and H2-DIW cases. A high-speed camera setup was introduced to analyze bubble dynamics under a 0.96 MHz ultrasonic field. Coalescence, agglomeration, and the population of multi-bubbles affected the PRE and PD of silicon wafers differently in the presence of SDS surfactant. We developed a hypothesis to explain the change in bubble characteristics under different chemical environmental conditions.
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title_short	Chemically controlled megasonic cleaning of patterned structures using solutions with dissolved gas and surfactant
url	https://doi.org/10.1016/j.ultsonch.2021.105859 https://doaj.org/article/eb5c37e08077416b8d0e1614767cc735 http://www.sciencedirect.com/science/article/pii/S1350417721004016 https://doaj.org/toc/1350-4177
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Chemically controlled megasonic cleaning of patterned structures using solutions with dissolved gas and surfactant

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