Bandgap bowing parameter and alloy fluctuations for β-(AlxGa1−x)2O3 alloys for x ≤ 0.35 determined from low temperature optical reflectivity

A bandgap bowing parameter of 0.4 ± 0.2 eV for β-(AlxGa1−x)2O3 alloys, with Al compositions (x) up to 0.35, has been determined from the bandgap obtained from low temperature optical reflectivity, which suppresses the effect of electron–phonon interaction on the bandgap. A length scale of inhomogene...
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Autor*in:	Jayanta Bhattacharjee [verfasserIn] Sahadeb Ghosh [verfasserIn] Preeti Pokhriyal [verfasserIn] Rashmi Gangwar [verfasserIn] Rajeev Dutt [verfasserIn] Archna Sagdeo [verfasserIn] Pragya Tiwari [verfasserIn] S. D. Singh [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2021

Übergeordnetes Werk:	In: AIP Advances - AIP Publishing LLC, 2011, 11(2021), 7, Seite 075025-075025-6
Übergeordnetes Werk:	volume:11 ; year:2021 ; number:7 ; pages:075025-075025-6

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.1063/5.0055874

Katalog-ID:	DOAJ062692208

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520			\|a A bandgap bowing parameter of 0.4 ± 0.2 eV for β-(AlxGa1−x)2O3 alloys, with Al compositions (x) up to 0.35, has been determined from the bandgap obtained from low temperature optical reflectivity, which suppresses the effect of electron–phonon interaction on the bandgap. A length scale of inhomogeneity of 0.21 ± 0.03 times of the electron–hole mean free path length has been estimated for β-(AlxGa1−x)2O3 alloys. The unit cell of β-(AlxGa1−x)2O3 alloys compresses, and the lattice parameters vary linearly with Al substitution. Our results provide insight into bandgap engineering and alloy disorder for β-(AlxGa1−x)2O3 alloys, which are an important material system for applications in deep ultraviolet opto-electronic devices.
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allfields	10.1063/5.0055874 doi (DE-627)DOAJ062692208 (DE-599)DOAJ68928888da1c48649d457d5530d5ea24 DE-627 ger DE-627 rakwb eng QC1-999 Jayanta Bhattacharjee verfasserin aut Bandgap bowing parameter and alloy fluctuations for β-(AlxGa1−x)2O3 alloys for x ≤ 0.35 determined from low temperature optical reflectivity 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A bandgap bowing parameter of 0.4 ± 0.2 eV for β-(AlxGa1−x)2O3 alloys, with Al compositions (x) up to 0.35, has been determined from the bandgap obtained from low temperature optical reflectivity, which suppresses the effect of electron–phonon interaction on the bandgap. A length scale of inhomogeneity of 0.21 ± 0.03 times of the electron–hole mean free path length has been estimated for β-(AlxGa1−x)2O3 alloys. The unit cell of β-(AlxGa1−x)2O3 alloys compresses, and the lattice parameters vary linearly with Al substitution. Our results provide insight into bandgap engineering and alloy disorder for β-(AlxGa1−x)2O3 alloys, which are an important material system for applications in deep ultraviolet opto-electronic devices. Physics Sahadeb Ghosh verfasserin aut Preeti Pokhriyal verfasserin aut Rashmi Gangwar verfasserin aut Rajeev Dutt verfasserin aut Archna Sagdeo verfasserin aut Pragya Tiwari verfasserin aut S. D. Singh verfasserin aut In AIP Advances AIP Publishing LLC, 2011 11(2021), 7, Seite 075025-075025-6 (DE-627)641391706 (DE-600)2583909-3 21583226 nnns volume:11 year:2021 number:7 pages:075025-075025-6 https://doi.org/10.1063/5.0055874 kostenfrei https://doaj.org/article/68928888da1c48649d457d5530d5ea24 kostenfrei http://dx.doi.org/10.1063/5.0055874 kostenfrei https://doaj.org/toc/2158-3226 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 7 075025-075025-6
spelling	10.1063/5.0055874 doi (DE-627)DOAJ062692208 (DE-599)DOAJ68928888da1c48649d457d5530d5ea24 DE-627 ger DE-627 rakwb eng QC1-999 Jayanta Bhattacharjee verfasserin aut Bandgap bowing parameter and alloy fluctuations for β-(AlxGa1−x)2O3 alloys for x ≤ 0.35 determined from low temperature optical reflectivity 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A bandgap bowing parameter of 0.4 ± 0.2 eV for β-(AlxGa1−x)2O3 alloys, with Al compositions (x) up to 0.35, has been determined from the bandgap obtained from low temperature optical reflectivity, which suppresses the effect of electron–phonon interaction on the bandgap. A length scale of inhomogeneity of 0.21 ± 0.03 times of the electron–hole mean free path length has been estimated for β-(AlxGa1−x)2O3 alloys. The unit cell of β-(AlxGa1−x)2O3 alloys compresses, and the lattice parameters vary linearly with Al substitution. Our results provide insight into bandgap engineering and alloy disorder for β-(AlxGa1−x)2O3 alloys, which are an important material system for applications in deep ultraviolet opto-electronic devices. Physics Sahadeb Ghosh verfasserin aut Preeti Pokhriyal verfasserin aut Rashmi Gangwar verfasserin aut Rajeev Dutt verfasserin aut Archna Sagdeo verfasserin aut Pragya Tiwari verfasserin aut S. D. Singh verfasserin aut In AIP Advances AIP Publishing LLC, 2011 11(2021), 7, Seite 075025-075025-6 (DE-627)641391706 (DE-600)2583909-3 21583226 nnns volume:11 year:2021 number:7 pages:075025-075025-6 https://doi.org/10.1063/5.0055874 kostenfrei https://doaj.org/article/68928888da1c48649d457d5530d5ea24 kostenfrei http://dx.doi.org/10.1063/5.0055874 kostenfrei https://doaj.org/toc/2158-3226 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 7 075025-075025-6
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allfieldsGer	10.1063/5.0055874 doi (DE-627)DOAJ062692208 (DE-599)DOAJ68928888da1c48649d457d5530d5ea24 DE-627 ger DE-627 rakwb eng QC1-999 Jayanta Bhattacharjee verfasserin aut Bandgap bowing parameter and alloy fluctuations for β-(AlxGa1−x)2O3 alloys for x ≤ 0.35 determined from low temperature optical reflectivity 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A bandgap bowing parameter of 0.4 ± 0.2 eV for β-(AlxGa1−x)2O3 alloys, with Al compositions (x) up to 0.35, has been determined from the bandgap obtained from low temperature optical reflectivity, which suppresses the effect of electron–phonon interaction on the bandgap. A length scale of inhomogeneity of 0.21 ± 0.03 times of the electron–hole mean free path length has been estimated for β-(AlxGa1−x)2O3 alloys. The unit cell of β-(AlxGa1−x)2O3 alloys compresses, and the lattice parameters vary linearly with Al substitution. Our results provide insight into bandgap engineering and alloy disorder for β-(AlxGa1−x)2O3 alloys, which are an important material system for applications in deep ultraviolet opto-electronic devices. Physics Sahadeb Ghosh verfasserin aut Preeti Pokhriyal verfasserin aut Rashmi Gangwar verfasserin aut Rajeev Dutt verfasserin aut Archna Sagdeo verfasserin aut Pragya Tiwari verfasserin aut S. D. Singh verfasserin aut In AIP Advances AIP Publishing LLC, 2011 11(2021), 7, Seite 075025-075025-6 (DE-627)641391706 (DE-600)2583909-3 21583226 nnns volume:11 year:2021 number:7 pages:075025-075025-6 https://doi.org/10.1063/5.0055874 kostenfrei https://doaj.org/article/68928888da1c48649d457d5530d5ea24 kostenfrei http://dx.doi.org/10.1063/5.0055874 kostenfrei https://doaj.org/toc/2158-3226 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 7 075025-075025-6
allfieldsSound	10.1063/5.0055874 doi (DE-627)DOAJ062692208 (DE-599)DOAJ68928888da1c48649d457d5530d5ea24 DE-627 ger DE-627 rakwb eng QC1-999 Jayanta Bhattacharjee verfasserin aut Bandgap bowing parameter and alloy fluctuations for β-(AlxGa1−x)2O3 alloys for x ≤ 0.35 determined from low temperature optical reflectivity 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A bandgap bowing parameter of 0.4 ± 0.2 eV for β-(AlxGa1−x)2O3 alloys, with Al compositions (x) up to 0.35, has been determined from the bandgap obtained from low temperature optical reflectivity, which suppresses the effect of electron–phonon interaction on the bandgap. A length scale of inhomogeneity of 0.21 ± 0.03 times of the electron–hole mean free path length has been estimated for β-(AlxGa1−x)2O3 alloys. The unit cell of β-(AlxGa1−x)2O3 alloys compresses, and the lattice parameters vary linearly with Al substitution. Our results provide insight into bandgap engineering and alloy disorder for β-(AlxGa1−x)2O3 alloys, which are an important material system for applications in deep ultraviolet opto-electronic devices. Physics Sahadeb Ghosh verfasserin aut Preeti Pokhriyal verfasserin aut Rashmi Gangwar verfasserin aut Rajeev Dutt verfasserin aut Archna Sagdeo verfasserin aut Pragya Tiwari verfasserin aut S. D. Singh verfasserin aut In AIP Advances AIP Publishing LLC, 2011 11(2021), 7, Seite 075025-075025-6 (DE-627)641391706 (DE-600)2583909-3 21583226 nnns volume:11 year:2021 number:7 pages:075025-075025-6 https://doi.org/10.1063/5.0055874 kostenfrei https://doaj.org/article/68928888da1c48649d457d5530d5ea24 kostenfrei http://dx.doi.org/10.1063/5.0055874 kostenfrei https://doaj.org/toc/2158-3226 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 7 075025-075025-6
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source	In AIP Advances 11(2021), 7, Seite 075025-075025-6 volume:11 year:2021 number:7 pages:075025-075025-6
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callnumber-first	Q - Science
author	Jayanta Bhattacharjee
spellingShingle	Jayanta Bhattacharjee misc QC1-999 misc Physics Bandgap bowing parameter and alloy fluctuations for β-(AlxGa1−x)2O3 alloys for x ≤ 0.35 determined from low temperature optical reflectivity
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topic_title	QC1-999 Bandgap bowing parameter and alloy fluctuations for β-(AlxGa1−x)2O3 alloys for x ≤ 0.35 determined from low temperature optical reflectivity
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title	Bandgap bowing parameter and alloy fluctuations for β-(AlxGa1−x)2O3 alloys for x ≤ 0.35 determined from low temperature optical reflectivity
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title_full	Bandgap bowing parameter and alloy fluctuations for β-(AlxGa1−x)2O3 alloys for x ≤ 0.35 determined from low temperature optical reflectivity
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title_sort	bandgap bowing parameter and alloy fluctuations for β-(alxga1−x)2o3 alloys for x ≤ 0.35 determined from low temperature optical reflectivity
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title_auth	Bandgap bowing parameter and alloy fluctuations for β-(AlxGa1−x)2O3 alloys for x ≤ 0.35 determined from low temperature optical reflectivity
abstract	A bandgap bowing parameter of 0.4 ± 0.2 eV for β-(AlxGa1−x)2O3 alloys, with Al compositions (x) up to 0.35, has been determined from the bandgap obtained from low temperature optical reflectivity, which suppresses the effect of electron–phonon interaction on the bandgap. A length scale of inhomogeneity of 0.21 ± 0.03 times of the electron–hole mean free path length has been estimated for β-(AlxGa1−x)2O3 alloys. The unit cell of β-(AlxGa1−x)2O3 alloys compresses, and the lattice parameters vary linearly with Al substitution. Our results provide insight into bandgap engineering and alloy disorder for β-(AlxGa1−x)2O3 alloys, which are an important material system for applications in deep ultraviolet opto-electronic devices.
abstractGer	A bandgap bowing parameter of 0.4 ± 0.2 eV for β-(AlxGa1−x)2O3 alloys, with Al compositions (x) up to 0.35, has been determined from the bandgap obtained from low temperature optical reflectivity, which suppresses the effect of electron–phonon interaction on the bandgap. A length scale of inhomogeneity of 0.21 ± 0.03 times of the electron–hole mean free path length has been estimated for β-(AlxGa1−x)2O3 alloys. The unit cell of β-(AlxGa1−x)2O3 alloys compresses, and the lattice parameters vary linearly with Al substitution. Our results provide insight into bandgap engineering and alloy disorder for β-(AlxGa1−x)2O3 alloys, which are an important material system for applications in deep ultraviolet opto-electronic devices.
abstract_unstemmed	A bandgap bowing parameter of 0.4 ± 0.2 eV for β-(AlxGa1−x)2O3 alloys, with Al compositions (x) up to 0.35, has been determined from the bandgap obtained from low temperature optical reflectivity, which suppresses the effect of electron–phonon interaction on the bandgap. A length scale of inhomogeneity of 0.21 ± 0.03 times of the electron–hole mean free path length has been estimated for β-(AlxGa1−x)2O3 alloys. The unit cell of β-(AlxGa1−x)2O3 alloys compresses, and the lattice parameters vary linearly with Al substitution. Our results provide insight into bandgap engineering and alloy disorder for β-(AlxGa1−x)2O3 alloys, which are an important material system for applications in deep ultraviolet opto-electronic devices.
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title_short	Bandgap bowing parameter and alloy fluctuations for β-(AlxGa1−x)2O3 alloys for x ≤ 0.35 determined from low temperature optical reflectivity
url	https://doi.org/10.1063/5.0055874 https://doaj.org/article/68928888da1c48649d457d5530d5ea24 http://dx.doi.org/10.1063/5.0055874 https://doaj.org/toc/2158-3226
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Bandgap bowing parameter and alloy fluctuations for β-(AlxGa1−x)2O3 alloys for x ≤ 0.35 determined from low temperature optical reflectivity

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