Scalable coating of HN-008N/Teflon AF1600X bilayer for electrowetting on dielectric
To industrialize electrowetting on dielectric (EWOD), the performance must be maintained on the large-area substrate, where the dielectric layer plays a critical role. Here we present slot-die coating HN-008N photoresist dielectric layer and screen-printing Teflon AF1600X (AFX) hydrophobic top-layer...
Ausführliche Beschreibung
Autor*in: |
Guisong Yang [verfasserIn] Hongqing Chen [verfasserIn] Biao Tang [verfasserIn] Alex Henzen [verfasserIn] Guofu Zhou [verfasserIn] |
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E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2021 |
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Schlagwörter: |
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Übergeordnetes Werk: |
In: Results in Physics - Elsevier, 2015, 24(2021), Seite 104161- |
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Übergeordnetes Werk: |
volume:24 ; year:2021 ; pages:104161- |
Links: |
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DOI / URN: |
10.1016/j.rinp.2021.104161 |
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Katalog-ID: |
DOAJ064682706 |
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10.1016/j.rinp.2021.104161 doi (DE-627)DOAJ064682706 (DE-599)DOAJ9482894f946e45acab034b4b3382a644 DE-627 ger DE-627 rakwb eng QC1-999 Guisong Yang verfasserin aut Scalable coating of HN-008N/Teflon AF1600X bilayer for electrowetting on dielectric 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier To industrialize electrowetting on dielectric (EWOD), the performance must be maintained on the large-area substrate, where the dielectric layer plays a critical role. Here we present slot-die coating HN-008N photoresist dielectric layer and screen-printing Teflon AF1600X (AFX) hydrophobic top-layer on Gen. 2.5 size ITO glass substrate of LCD industry (400 mm × 500 mm) for EWOD. The scalable coating of 500 nm HN-008N/800 nm AFX bilayer showed high throughput, good uniformity, and improved breakdown voltage (~190 V). The electric field distribution and electrowetting profiles of the bilayer with various thicknesses were systematically studied. Furthermore, the EWOD performance including applied voltage, contact angle change, and durability of the bilayer were investigated and compared with other reports. The results confirmed the capability of industrial-scale EWOD in this paper. Electrowetting on dielectric Scalable coating Bilayer dielectrics Physics Hongqing Chen verfasserin aut Biao Tang verfasserin aut Alex Henzen verfasserin aut Guofu Zhou verfasserin aut In Results in Physics Elsevier, 2015 24(2021), Seite 104161- (DE-627)670211257 (DE-600)2631798-9 22113797 nnns volume:24 year:2021 pages:104161- https://doi.org/10.1016/j.rinp.2021.104161 kostenfrei https://doaj.org/article/9482894f946e45acab034b4b3382a644 kostenfrei http://www.sciencedirect.com/science/article/pii/S2211379721003119 kostenfrei https://doaj.org/toc/2211-3797 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 AR 24 2021 104161- |
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10.1016/j.rinp.2021.104161 doi (DE-627)DOAJ064682706 (DE-599)DOAJ9482894f946e45acab034b4b3382a644 DE-627 ger DE-627 rakwb eng QC1-999 Guisong Yang verfasserin aut Scalable coating of HN-008N/Teflon AF1600X bilayer for electrowetting on dielectric 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier To industrialize electrowetting on dielectric (EWOD), the performance must be maintained on the large-area substrate, where the dielectric layer plays a critical role. Here we present slot-die coating HN-008N photoresist dielectric layer and screen-printing Teflon AF1600X (AFX) hydrophobic top-layer on Gen. 2.5 size ITO glass substrate of LCD industry (400 mm × 500 mm) for EWOD. The scalable coating of 500 nm HN-008N/800 nm AFX bilayer showed high throughput, good uniformity, and improved breakdown voltage (~190 V). The electric field distribution and electrowetting profiles of the bilayer with various thicknesses were systematically studied. Furthermore, the EWOD performance including applied voltage, contact angle change, and durability of the bilayer were investigated and compared with other reports. The results confirmed the capability of industrial-scale EWOD in this paper. Electrowetting on dielectric Scalable coating Bilayer dielectrics Physics Hongqing Chen verfasserin aut Biao Tang verfasserin aut Alex Henzen verfasserin aut Guofu Zhou verfasserin aut In Results in Physics Elsevier, 2015 24(2021), Seite 104161- (DE-627)670211257 (DE-600)2631798-9 22113797 nnns volume:24 year:2021 pages:104161- https://doi.org/10.1016/j.rinp.2021.104161 kostenfrei https://doaj.org/article/9482894f946e45acab034b4b3382a644 kostenfrei http://www.sciencedirect.com/science/article/pii/S2211379721003119 kostenfrei https://doaj.org/toc/2211-3797 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 AR 24 2021 104161- |
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10.1016/j.rinp.2021.104161 doi (DE-627)DOAJ064682706 (DE-599)DOAJ9482894f946e45acab034b4b3382a644 DE-627 ger DE-627 rakwb eng QC1-999 Guisong Yang verfasserin aut Scalable coating of HN-008N/Teflon AF1600X bilayer for electrowetting on dielectric 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier To industrialize electrowetting on dielectric (EWOD), the performance must be maintained on the large-area substrate, where the dielectric layer plays a critical role. Here we present slot-die coating HN-008N photoresist dielectric layer and screen-printing Teflon AF1600X (AFX) hydrophobic top-layer on Gen. 2.5 size ITO glass substrate of LCD industry (400 mm × 500 mm) for EWOD. The scalable coating of 500 nm HN-008N/800 nm AFX bilayer showed high throughput, good uniformity, and improved breakdown voltage (~190 V). The electric field distribution and electrowetting profiles of the bilayer with various thicknesses were systematically studied. Furthermore, the EWOD performance including applied voltage, contact angle change, and durability of the bilayer were investigated and compared with other reports. The results confirmed the capability of industrial-scale EWOD in this paper. Electrowetting on dielectric Scalable coating Bilayer dielectrics Physics Hongqing Chen verfasserin aut Biao Tang verfasserin aut Alex Henzen verfasserin aut Guofu Zhou verfasserin aut In Results in Physics Elsevier, 2015 24(2021), Seite 104161- (DE-627)670211257 (DE-600)2631798-9 22113797 nnns volume:24 year:2021 pages:104161- https://doi.org/10.1016/j.rinp.2021.104161 kostenfrei https://doaj.org/article/9482894f946e45acab034b4b3382a644 kostenfrei http://www.sciencedirect.com/science/article/pii/S2211379721003119 kostenfrei https://doaj.org/toc/2211-3797 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 AR 24 2021 104161- |
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10.1016/j.rinp.2021.104161 doi (DE-627)DOAJ064682706 (DE-599)DOAJ9482894f946e45acab034b4b3382a644 DE-627 ger DE-627 rakwb eng QC1-999 Guisong Yang verfasserin aut Scalable coating of HN-008N/Teflon AF1600X bilayer for electrowetting on dielectric 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier To industrialize electrowetting on dielectric (EWOD), the performance must be maintained on the large-area substrate, where the dielectric layer plays a critical role. Here we present slot-die coating HN-008N photoresist dielectric layer and screen-printing Teflon AF1600X (AFX) hydrophobic top-layer on Gen. 2.5 size ITO glass substrate of LCD industry (400 mm × 500 mm) for EWOD. The scalable coating of 500 nm HN-008N/800 nm AFX bilayer showed high throughput, good uniformity, and improved breakdown voltage (~190 V). The electric field distribution and electrowetting profiles of the bilayer with various thicknesses were systematically studied. Furthermore, the EWOD performance including applied voltage, contact angle change, and durability of the bilayer were investigated and compared with other reports. The results confirmed the capability of industrial-scale EWOD in this paper. Electrowetting on dielectric Scalable coating Bilayer dielectrics Physics Hongqing Chen verfasserin aut Biao Tang verfasserin aut Alex Henzen verfasserin aut Guofu Zhou verfasserin aut In Results in Physics Elsevier, 2015 24(2021), Seite 104161- (DE-627)670211257 (DE-600)2631798-9 22113797 nnns volume:24 year:2021 pages:104161- https://doi.org/10.1016/j.rinp.2021.104161 kostenfrei https://doaj.org/article/9482894f946e45acab034b4b3382a644 kostenfrei http://www.sciencedirect.com/science/article/pii/S2211379721003119 kostenfrei https://doaj.org/toc/2211-3797 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 AR 24 2021 104161- |
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10.1016/j.rinp.2021.104161 doi (DE-627)DOAJ064682706 (DE-599)DOAJ9482894f946e45acab034b4b3382a644 DE-627 ger DE-627 rakwb eng QC1-999 Guisong Yang verfasserin aut Scalable coating of HN-008N/Teflon AF1600X bilayer for electrowetting on dielectric 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier To industrialize electrowetting on dielectric (EWOD), the performance must be maintained on the large-area substrate, where the dielectric layer plays a critical role. Here we present slot-die coating HN-008N photoresist dielectric layer and screen-printing Teflon AF1600X (AFX) hydrophobic top-layer on Gen. 2.5 size ITO glass substrate of LCD industry (400 mm × 500 mm) for EWOD. The scalable coating of 500 nm HN-008N/800 nm AFX bilayer showed high throughput, good uniformity, and improved breakdown voltage (~190 V). The electric field distribution and electrowetting profiles of the bilayer with various thicknesses were systematically studied. Furthermore, the EWOD performance including applied voltage, contact angle change, and durability of the bilayer were investigated and compared with other reports. The results confirmed the capability of industrial-scale EWOD in this paper. Electrowetting on dielectric Scalable coating Bilayer dielectrics Physics Hongqing Chen verfasserin aut Biao Tang verfasserin aut Alex Henzen verfasserin aut Guofu Zhou verfasserin aut In Results in Physics Elsevier, 2015 24(2021), Seite 104161- (DE-627)670211257 (DE-600)2631798-9 22113797 nnns volume:24 year:2021 pages:104161- https://doi.org/10.1016/j.rinp.2021.104161 kostenfrei https://doaj.org/article/9482894f946e45acab034b4b3382a644 kostenfrei http://www.sciencedirect.com/science/article/pii/S2211379721003119 kostenfrei https://doaj.org/toc/2211-3797 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 AR 24 2021 104161- |
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QC1-999 Scalable coating of HN-008N/Teflon AF1600X bilayer for electrowetting on dielectric Electrowetting on dielectric Scalable coating Bilayer dielectrics |
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Scalable coating of HN-008N/Teflon AF1600X bilayer for electrowetting on dielectric |
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Scalable coating of HN-008N/Teflon AF1600X bilayer for electrowetting on dielectric |
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Guisong Yang |
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Guisong Yang Hongqing Chen Biao Tang Alex Henzen Guofu Zhou |
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scalable coating of hn-008n/teflon af1600x bilayer for electrowetting on dielectric |
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Scalable coating of HN-008N/Teflon AF1600X bilayer for electrowetting on dielectric |
abstract |
To industrialize electrowetting on dielectric (EWOD), the performance must be maintained on the large-area substrate, where the dielectric layer plays a critical role. Here we present slot-die coating HN-008N photoresist dielectric layer and screen-printing Teflon AF1600X (AFX) hydrophobic top-layer on Gen. 2.5 size ITO glass substrate of LCD industry (400 mm × 500 mm) for EWOD. The scalable coating of 500 nm HN-008N/800 nm AFX bilayer showed high throughput, good uniformity, and improved breakdown voltage (~190 V). The electric field distribution and electrowetting profiles of the bilayer with various thicknesses were systematically studied. Furthermore, the EWOD performance including applied voltage, contact angle change, and durability of the bilayer were investigated and compared with other reports. The results confirmed the capability of industrial-scale EWOD in this paper. |
abstractGer |
To industrialize electrowetting on dielectric (EWOD), the performance must be maintained on the large-area substrate, where the dielectric layer plays a critical role. Here we present slot-die coating HN-008N photoresist dielectric layer and screen-printing Teflon AF1600X (AFX) hydrophobic top-layer on Gen. 2.5 size ITO glass substrate of LCD industry (400 mm × 500 mm) for EWOD. The scalable coating of 500 nm HN-008N/800 nm AFX bilayer showed high throughput, good uniformity, and improved breakdown voltage (~190 V). The electric field distribution and electrowetting profiles of the bilayer with various thicknesses were systematically studied. Furthermore, the EWOD performance including applied voltage, contact angle change, and durability of the bilayer were investigated and compared with other reports. The results confirmed the capability of industrial-scale EWOD in this paper. |
abstract_unstemmed |
To industrialize electrowetting on dielectric (EWOD), the performance must be maintained on the large-area substrate, where the dielectric layer plays a critical role. Here we present slot-die coating HN-008N photoresist dielectric layer and screen-printing Teflon AF1600X (AFX) hydrophobic top-layer on Gen. 2.5 size ITO glass substrate of LCD industry (400 mm × 500 mm) for EWOD. The scalable coating of 500 nm HN-008N/800 nm AFX bilayer showed high throughput, good uniformity, and improved breakdown voltage (~190 V). The electric field distribution and electrowetting profiles of the bilayer with various thicknesses were systematically studied. Furthermore, the EWOD performance including applied voltage, contact angle change, and durability of the bilayer were investigated and compared with other reports. The results confirmed the capability of industrial-scale EWOD in this paper. |
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Scalable coating of HN-008N/Teflon AF1600X bilayer for electrowetting on dielectric |
url |
https://doi.org/10.1016/j.rinp.2021.104161 https://doaj.org/article/9482894f946e45acab034b4b3382a644 http://www.sciencedirect.com/science/article/pii/S2211379721003119 https://doaj.org/toc/2211-3797 |
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