Modeling of a quantized current and gate field-effect in gated three-terminal Cu2-αS electrochemical memristors

Memristors exhibit very sharp off-to-on transitions with a large on/off resistance ratio. These remarkable characteristics coupled with their long retention time and very simple device geometry make them nearly ideal for three-terminal devices where the gate voltage can change their on/off voltages...
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Autor*in:	Y. Zhang [verfasserIn] N. I. Mou [verfasserIn] P. Pai [verfasserIn] M. Tabib-Azar [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2015

Übergeordnetes Werk:	In: AIP Advances - AIP Publishing LLC, 2011, 5(2015), 2, Seite 027127-027127-7
Übergeordnetes Werk:	volume:5 ; year:2015 ; number:2 ; pages:027127-027127-7

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.1063/1.4913372

Katalog-ID:	DOAJ065225503

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allfieldsSound	10.1063/1.4913372 doi (DE-627)DOAJ065225503 (DE-599)DOAJ139a5ae104bd4537ba55e16a1719e307 DE-627 ger DE-627 rakwb eng QC1-999 Y. Zhang verfasserin aut Modeling of a quantized current and gate field-effect in gated three-terminal Cu2-αS electrochemical memristors 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Memristors exhibit very sharp off-to-on transitions with a large on/off resistance ratio. These remarkable characteristics coupled with their long retention time and very simple device geometry make them nearly ideal for three-terminal devices where the gate voltage can change their on/off voltages and/or simply turn them off, eliminating the need for bipolar operations. In this paper, we propose a cation migration-based computational model to explain the quantized current conduction and the gate field-effect in Cu2-αS memristors. Having tree-shaped conductive filaments inside a memristor is the reason for the quantized current conduction effect. Applying a gate voltage causes a deformation of the conductive filaments and thus controls the SET and the RESET process of the device. Physics N. I. Mou verfasserin aut P. Pai verfasserin aut M. Tabib-Azar verfasserin aut In AIP Advances AIP Publishing LLC, 2011 5(2015), 2, Seite 027127-027127-7 (DE-627)641391706 (DE-600)2583909-3 21583226 nnns volume:5 year:2015 number:2 pages:027127-027127-7 https://doi.org/10.1063/1.4913372 kostenfrei https://doaj.org/article/139a5ae104bd4537ba55e16a1719e307 kostenfrei http://dx.doi.org/10.1063/1.4913372 kostenfrei https://doaj.org/toc/2158-3226 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 5 2015 2 027127-027127-7
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source	In AIP Advances 5(2015), 2, Seite 027127-027127-7 volume:5 year:2015 number:2 pages:027127-027127-7
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callnumber-first	Q - Science
author	Y. Zhang
spellingShingle	Y. Zhang misc QC1-999 misc Physics Modeling of a quantized current and gate field-effect in gated three-terminal Cu2-αS electrochemical memristors
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topic_title	QC1-999 Modeling of a quantized current and gate field-effect in gated three-terminal Cu2-αS electrochemical memristors
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title	Modeling of a quantized current and gate field-effect in gated three-terminal Cu2-αS electrochemical memristors
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title_full	Modeling of a quantized current and gate field-effect in gated three-terminal Cu2-αS electrochemical memristors
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doi_str_mv	10.1063/1.4913372
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title_sort	modeling of a quantized current and gate field-effect in gated three-terminal cu2-αs electrochemical memristors
callnumber	QC1-999
title_auth	Modeling of a quantized current and gate field-effect in gated three-terminal Cu2-αS electrochemical memristors
abstract	Memristors exhibit very sharp off-to-on transitions with a large on/off resistance ratio. These remarkable characteristics coupled with their long retention time and very simple device geometry make them nearly ideal for three-terminal devices where the gate voltage can change their on/off voltages and/or simply turn them off, eliminating the need for bipolar operations. In this paper, we propose a cation migration-based computational model to explain the quantized current conduction and the gate field-effect in Cu2-αS memristors. Having tree-shaped conductive filaments inside a memristor is the reason for the quantized current conduction effect. Applying a gate voltage causes a deformation of the conductive filaments and thus controls the SET and the RESET process of the device.
abstractGer	Memristors exhibit very sharp off-to-on transitions with a large on/off resistance ratio. These remarkable characteristics coupled with their long retention time and very simple device geometry make them nearly ideal for three-terminal devices where the gate voltage can change their on/off voltages and/or simply turn them off, eliminating the need for bipolar operations. In this paper, we propose a cation migration-based computational model to explain the quantized current conduction and the gate field-effect in Cu2-αS memristors. Having tree-shaped conductive filaments inside a memristor is the reason for the quantized current conduction effect. Applying a gate voltage causes a deformation of the conductive filaments and thus controls the SET and the RESET process of the device.
abstract_unstemmed	Memristors exhibit very sharp off-to-on transitions with a large on/off resistance ratio. These remarkable characteristics coupled with their long retention time and very simple device geometry make them nearly ideal for three-terminal devices where the gate voltage can change their on/off voltages and/or simply turn them off, eliminating the need for bipolar operations. In this paper, we propose a cation migration-based computational model to explain the quantized current conduction and the gate field-effect in Cu2-αS memristors. Having tree-shaped conductive filaments inside a memristor is the reason for the quantized current conduction effect. Applying a gate voltage causes a deformation of the conductive filaments and thus controls the SET and the RESET process of the device.
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title_short	Modeling of a quantized current and gate field-effect in gated three-terminal Cu2-αS electrochemical memristors
url	https://doi.org/10.1063/1.4913372 https://doaj.org/article/139a5ae104bd4537ba55e16a1719e307 http://dx.doi.org/10.1063/1.4913372 https://doaj.org/toc/2158-3226
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author2	N. I. Mou P. Pai M. Tabib-Azar
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