Optimization of Photoelectron <italic<In-Situ</italic< Sensing Device in FD-SOI

This article presents the optimization of a one-transistor active pixel sensor (1T-APS), known as the photoelectron <italic<in-situ</italic< sensing device (PISD) built in a fully-depleted silicon-on-insulator (FD-SOI) substrate. By employing TCAD simulation, we develop a physics-based m...
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Autor*in:	J. Liu [verfasserIn] K. Xiao [verfasserIn] J.-N. Deng [verfasserIn] A. Zaslavsky [verfasserIn] S. Cristoloveanu [verfasserIn] Fy. Liu [verfasserIn] J. Wan [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2021

Schlagwörter:	1T-APS FD-SOI PISD TCAD sensitivity sensing range

Übergeordnetes Werk:	In: IEEE Journal of the Electron Devices Society - IEEE, 2014, 9(2021), Seite 187-194
Übergeordnetes Werk:	volume:9 ; year:2021 ; pages:187-194

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.1109/JEDS.2020.3048721

Katalog-ID:	DOAJ069663513

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spelling	10.1109/JEDS.2020.3048721 doi (DE-627)DOAJ069663513 (DE-599)DOAJfc876fea7e0f42f1ada4e330237d972a DE-627 ger DE-627 rakwb eng TK1-9971 J. Liu verfasserin aut Optimization of Photoelectron <italic<In-Situ</italic< Sensing Device in FD-SOI 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This article presents the optimization of a one-transistor active pixel sensor (1T-APS), known as the photoelectron <italic<in-situ</italic< sensing device (PISD) built in a fully-depleted silicon-on-insulator (FD-SOI) substrate. By employing TCAD simulation, we develop a physics-based model and systematically investigate the impact of six key parameters – gate oxide thickness, buried oxide layer, top Si layer, gate length, length of active region, and substrate doping – on the device’s sensitivity and sensing range. Our comprehensive study provides guidance on the design of the PISD with the highest performance. 1T-APS FD-SOI PISD TCAD sensitivity sensing range Electrical engineering. Electronics. Nuclear engineering K. Xiao verfasserin aut J.-N. Deng verfasserin aut A. Zaslavsky verfasserin aut S. Cristoloveanu verfasserin aut Fy. Liu verfasserin aut J. Wan verfasserin aut In IEEE Journal of the Electron Devices Society IEEE, 2014 9(2021), Seite 187-194 (DE-627)733363016 (DE-600)2696552-5 21686734 nnns volume:9 year:2021 pages:187-194 https://doi.org/10.1109/JEDS.2020.3048721 kostenfrei https://doaj.org/article/fc876fea7e0f42f1ada4e330237d972a kostenfrei https://ieeexplore.ieee.org/document/9312204/ kostenfrei https://doaj.org/toc/2168-6734 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2021 187-194
allfields_unstemmed	10.1109/JEDS.2020.3048721 doi (DE-627)DOAJ069663513 (DE-599)DOAJfc876fea7e0f42f1ada4e330237d972a DE-627 ger DE-627 rakwb eng TK1-9971 J. Liu verfasserin aut Optimization of Photoelectron <italic<In-Situ</italic< Sensing Device in FD-SOI 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This article presents the optimization of a one-transistor active pixel sensor (1T-APS), known as the photoelectron <italic<in-situ</italic< sensing device (PISD) built in a fully-depleted silicon-on-insulator (FD-SOI) substrate. By employing TCAD simulation, we develop a physics-based model and systematically investigate the impact of six key parameters – gate oxide thickness, buried oxide layer, top Si layer, gate length, length of active region, and substrate doping – on the device’s sensitivity and sensing range. Our comprehensive study provides guidance on the design of the PISD with the highest performance. 1T-APS FD-SOI PISD TCAD sensitivity sensing range Electrical engineering. Electronics. Nuclear engineering K. Xiao verfasserin aut J.-N. Deng verfasserin aut A. Zaslavsky verfasserin aut S. Cristoloveanu verfasserin aut Fy. Liu verfasserin aut J. Wan verfasserin aut In IEEE Journal of the Electron Devices Society IEEE, 2014 9(2021), Seite 187-194 (DE-627)733363016 (DE-600)2696552-5 21686734 nnns volume:9 year:2021 pages:187-194 https://doi.org/10.1109/JEDS.2020.3048721 kostenfrei https://doaj.org/article/fc876fea7e0f42f1ada4e330237d972a kostenfrei https://ieeexplore.ieee.org/document/9312204/ kostenfrei https://doaj.org/toc/2168-6734 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2021 187-194
allfieldsGer	10.1109/JEDS.2020.3048721 doi (DE-627)DOAJ069663513 (DE-599)DOAJfc876fea7e0f42f1ada4e330237d972a DE-627 ger DE-627 rakwb eng TK1-9971 J. Liu verfasserin aut Optimization of Photoelectron <italic<In-Situ</italic< Sensing Device in FD-SOI 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This article presents the optimization of a one-transistor active pixel sensor (1T-APS), known as the photoelectron <italic<in-situ</italic< sensing device (PISD) built in a fully-depleted silicon-on-insulator (FD-SOI) substrate. By employing TCAD simulation, we develop a physics-based model and systematically investigate the impact of six key parameters – gate oxide thickness, buried oxide layer, top Si layer, gate length, length of active region, and substrate doping – on the device’s sensitivity and sensing range. Our comprehensive study provides guidance on the design of the PISD with the highest performance. 1T-APS FD-SOI PISD TCAD sensitivity sensing range Electrical engineering. Electronics. Nuclear engineering K. Xiao verfasserin aut J.-N. Deng verfasserin aut A. Zaslavsky verfasserin aut S. Cristoloveanu verfasserin aut Fy. Liu verfasserin aut J. Wan verfasserin aut In IEEE Journal of the Electron Devices Society IEEE, 2014 9(2021), Seite 187-194 (DE-627)733363016 (DE-600)2696552-5 21686734 nnns volume:9 year:2021 pages:187-194 https://doi.org/10.1109/JEDS.2020.3048721 kostenfrei https://doaj.org/article/fc876fea7e0f42f1ada4e330237d972a kostenfrei https://ieeexplore.ieee.org/document/9312204/ kostenfrei https://doaj.org/toc/2168-6734 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2021 187-194
allfieldsSound	10.1109/JEDS.2020.3048721 doi (DE-627)DOAJ069663513 (DE-599)DOAJfc876fea7e0f42f1ada4e330237d972a DE-627 ger DE-627 rakwb eng TK1-9971 J. Liu verfasserin aut Optimization of Photoelectron <italic<In-Situ</italic< Sensing Device in FD-SOI 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This article presents the optimization of a one-transistor active pixel sensor (1T-APS), known as the photoelectron <italic<in-situ</italic< sensing device (PISD) built in a fully-depleted silicon-on-insulator (FD-SOI) substrate. By employing TCAD simulation, we develop a physics-based model and systematically investigate the impact of six key parameters – gate oxide thickness, buried oxide layer, top Si layer, gate length, length of active region, and substrate doping – on the device’s sensitivity and sensing range. Our comprehensive study provides guidance on the design of the PISD with the highest performance. 1T-APS FD-SOI PISD TCAD sensitivity sensing range Electrical engineering. Electronics. Nuclear engineering K. Xiao verfasserin aut J.-N. Deng verfasserin aut A. Zaslavsky verfasserin aut S. Cristoloveanu verfasserin aut Fy. Liu verfasserin aut J. Wan verfasserin aut In IEEE Journal of the Electron Devices Society IEEE, 2014 9(2021), Seite 187-194 (DE-627)733363016 (DE-600)2696552-5 21686734 nnns volume:9 year:2021 pages:187-194 https://doi.org/10.1109/JEDS.2020.3048721 kostenfrei https://doaj.org/article/fc876fea7e0f42f1ada4e330237d972a kostenfrei https://ieeexplore.ieee.org/document/9312204/ kostenfrei https://doaj.org/toc/2168-6734 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2021 187-194
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source	In IEEE Journal of the Electron Devices Society 9(2021), Seite 187-194 volume:9 year:2021 pages:187-194
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callnumber-first	T - Technology
author	J. Liu
spellingShingle	J. Liu misc TK1-9971 misc 1T-APS misc FD-SOI misc PISD misc TCAD misc sensitivity misc sensing range misc Electrical engineering. Electronics. Nuclear engineering Optimization of Photoelectron <italic<In-Situ</italic< Sensing Device in FD-SOI
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topic_title	TK1-9971 Optimization of Photoelectron <italic<In-Situ</italic< Sensing Device in FD-SOI 1T-APS FD-SOI PISD TCAD sensitivity sensing range
topic	misc TK1-9971 misc 1T-APS misc FD-SOI misc PISD misc TCAD misc sensitivity misc sensing range misc Electrical engineering. Electronics. Nuclear engineering
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title	Optimization of Photoelectron <italic<In-Situ</italic< Sensing Device in FD-SOI
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title_full	Optimization of Photoelectron <italic<In-Situ</italic< Sensing Device in FD-SOI
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title_auth	Optimization of Photoelectron <italic<In-Situ</italic< Sensing Device in FD-SOI
abstract	This article presents the optimization of a one-transistor active pixel sensor (1T-APS), known as the photoelectron <italic<in-situ</italic< sensing device (PISD) built in a fully-depleted silicon-on-insulator (FD-SOI) substrate. By employing TCAD simulation, we develop a physics-based model and systematically investigate the impact of six key parameters – gate oxide thickness, buried oxide layer, top Si layer, gate length, length of active region, and substrate doping – on the device’s sensitivity and sensing range. Our comprehensive study provides guidance on the design of the PISD with the highest performance.
abstractGer	This article presents the optimization of a one-transistor active pixel sensor (1T-APS), known as the photoelectron <italic<in-situ</italic< sensing device (PISD) built in a fully-depleted silicon-on-insulator (FD-SOI) substrate. By employing TCAD simulation, we develop a physics-based model and systematically investigate the impact of six key parameters – gate oxide thickness, buried oxide layer, top Si layer, gate length, length of active region, and substrate doping – on the device’s sensitivity and sensing range. Our comprehensive study provides guidance on the design of the PISD with the highest performance.
abstract_unstemmed	This article presents the optimization of a one-transistor active pixel sensor (1T-APS), known as the photoelectron <italic<in-situ</italic< sensing device (PISD) built in a fully-depleted silicon-on-insulator (FD-SOI) substrate. By employing TCAD simulation, we develop a physics-based model and systematically investigate the impact of six key parameters – gate oxide thickness, buried oxide layer, top Si layer, gate length, length of active region, and substrate doping – on the device’s sensitivity and sensing range. Our comprehensive study provides guidance on the design of the PISD with the highest performance.
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title_short	Optimization of Photoelectron <italic<In-Situ</italic< Sensing Device in FD-SOI
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