Analysis of interface workfunction and process-induced damage of reactive-plasma-deposited ITO/SiO2/Si stack

Workfunction of reactive-plasma deposited indium-tin-oxide (RPD-ITO) at the ITO/SiO2 interface, which is referred as interface workfunction, and the process-induced damage are experimentally extracted for the first time based on capacitance-voltage (C-V) analysis. The estimated interface workfunctio...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	T. Kamioka [verfasserIn] Y. Hayashi [verfasserIn] Y. Isogai [verfasserIn] K. Nakamura [verfasserIn] Y. Ohshita [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2017

Übergeordnetes Werk:	In: AIP Advances - AIP Publishing LLC, 2011, 7(2017), 9, Seite 095212-095212-9
Übergeordnetes Werk:	volume:7 ; year:2017 ; number:9 ; pages:095212-095212-9

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.1063/1.4997495

Katalog-ID:	DOAJ07267346X

Internformat


LEADER	01000caa a22002652 4500
001	DOAJ07267346X
003	DE-627
005	20230309111335.0
007	cr uuu---uuuuu
008	230228s2017 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.1063/1.4997495 \|2 doi
035			\|a (DE-627)DOAJ07267346X
035			\|a (DE-599)DOAJ3c8a99b35be04fe6a7dea590685714e5
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
050		0	\|a QC1-999
100	0		\|a T. Kamioka \|e verfasserin \|4 aut
245	1	0	\|a Analysis of interface workfunction and process-induced damage of reactive-plasma-deposited ITO/SiO2/Si stack
264		1	\|c 2017
336			\|a Text \|b txt \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
520			\|a Workfunction of reactive-plasma deposited indium-tin-oxide (RPD-ITO) at the ITO/SiO2 interface, which is referred as interface workfunction, and the process-induced damage are experimentally extracted for the first time based on capacitance-voltage (C-V) analysis. The estimated interface workfunction value of 4.74 eV for as-deposition condition is about 0.4 eV higher than that in the bulk determined by ultraviolet photoelectron spectroscopy (UPS). The RPD process induces the damage at the Si/SiO2 interface, and the degree of the damage is evaluated as the interface defect density (Dit) to be around 1012 cm-2eV-1. The effects of forming-gas annealing on the interface workfunction and recovery of the damage are also studied. The interface workfunction value once decreases to 4.53 eV by the annealing up to 250 oC and then turns to increase to 4.77 eV after 400 oC annealing. The damage is annihilated by the low-temperature forming-gas annealing at 200 oC.
653		0	\|a Physics
700	0		\|a Y. Hayashi \|e verfasserin \|4 aut
700	0		\|a Y. Isogai \|e verfasserin \|4 aut
700	0		\|a K. Nakamura \|e verfasserin \|4 aut
700	0		\|a Y. Ohshita \|e verfasserin \|4 aut
773	0	8	\|i In \|t AIP Advances \|d AIP Publishing LLC, 2011 \|g 7(2017), 9, Seite 095212-095212-9 \|w (DE-627)641391706 \|w (DE-600)2583909-3 \|x 21583226 \|7 nnns
773	1	8	\|g volume:7 \|g year:2017 \|g number:9 \|g pages:095212-095212-9
856	4	0	\|u https://doi.org/10.1063/1.4997495 \|z kostenfrei
856	4	0	\|u https://doaj.org/article/3c8a99b35be04fe6a7dea590685714e5 \|z kostenfrei
856	4	0	\|u http://dx.doi.org/10.1063/1.4997495 \|z kostenfrei
856	4	2	\|u https://doaj.org/toc/2158-3226 \|y Journal toc \|z kostenfrei
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_DOAJ
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_31
912			\|a GBV_ILN_39
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_95
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_151
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_213
912			\|a GBV_ILN_230
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_4012
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4367
912			\|a GBV_ILN_4700
951			\|a AR
952			\|d 7 \|j 2017 \|e 9 \|h 095212-095212-9

Indexfelder

author_variant	t k tk y h yh y i yi k n kn y o yo
matchkey_str	article:21583226:2017----::nlssfnefcwrfntoadrcsidcdaaefeciels
hierarchy_sort_str	2017
callnumber-subject-code	QC
publishDate	2017
allfields	10.1063/1.4997495 doi (DE-627)DOAJ07267346X (DE-599)DOAJ3c8a99b35be04fe6a7dea590685714e5 DE-627 ger DE-627 rakwb eng QC1-999 T. Kamioka verfasserin aut Analysis of interface workfunction and process-induced damage of reactive-plasma-deposited ITO/SiO2/Si stack 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Workfunction of reactive-plasma deposited indium-tin-oxide (RPD-ITO) at the ITO/SiO2 interface, which is referred as interface workfunction, and the process-induced damage are experimentally extracted for the first time based on capacitance-voltage (C-V) analysis. The estimated interface workfunction value of 4.74 eV for as-deposition condition is about 0.4 eV higher than that in the bulk determined by ultraviolet photoelectron spectroscopy (UPS). The RPD process induces the damage at the Si/SiO2 interface, and the degree of the damage is evaluated as the interface defect density (Dit) to be around 1012 cm-2eV-1. The effects of forming-gas annealing on the interface workfunction and recovery of the damage are also studied. The interface workfunction value once decreases to 4.53 eV by the annealing up to 250 oC and then turns to increase to 4.77 eV after 400 oC annealing. The damage is annihilated by the low-temperature forming-gas annealing at 200 oC. Physics Y. Hayashi verfasserin aut Y. Isogai verfasserin aut K. Nakamura verfasserin aut Y. Ohshita verfasserin aut In AIP Advances AIP Publishing LLC, 2011 7(2017), 9, Seite 095212-095212-9 (DE-627)641391706 (DE-600)2583909-3 21583226 nnns volume:7 year:2017 number:9 pages:095212-095212-9 https://doi.org/10.1063/1.4997495 kostenfrei https://doaj.org/article/3c8a99b35be04fe6a7dea590685714e5 kostenfrei http://dx.doi.org/10.1063/1.4997495 kostenfrei https://doaj.org/toc/2158-3226 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 7 2017 9 095212-095212-9
spelling	10.1063/1.4997495 doi (DE-627)DOAJ07267346X (DE-599)DOAJ3c8a99b35be04fe6a7dea590685714e5 DE-627 ger DE-627 rakwb eng QC1-999 T. Kamioka verfasserin aut Analysis of interface workfunction and process-induced damage of reactive-plasma-deposited ITO/SiO2/Si stack 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Workfunction of reactive-plasma deposited indium-tin-oxide (RPD-ITO) at the ITO/SiO2 interface, which is referred as interface workfunction, and the process-induced damage are experimentally extracted for the first time based on capacitance-voltage (C-V) analysis. The estimated interface workfunction value of 4.74 eV for as-deposition condition is about 0.4 eV higher than that in the bulk determined by ultraviolet photoelectron spectroscopy (UPS). The RPD process induces the damage at the Si/SiO2 interface, and the degree of the damage is evaluated as the interface defect density (Dit) to be around 1012 cm-2eV-1. The effects of forming-gas annealing on the interface workfunction and recovery of the damage are also studied. The interface workfunction value once decreases to 4.53 eV by the annealing up to 250 oC and then turns to increase to 4.77 eV after 400 oC annealing. The damage is annihilated by the low-temperature forming-gas annealing at 200 oC. Physics Y. Hayashi verfasserin aut Y. Isogai verfasserin aut K. Nakamura verfasserin aut Y. Ohshita verfasserin aut In AIP Advances AIP Publishing LLC, 2011 7(2017), 9, Seite 095212-095212-9 (DE-627)641391706 (DE-600)2583909-3 21583226 nnns volume:7 year:2017 number:9 pages:095212-095212-9 https://doi.org/10.1063/1.4997495 kostenfrei https://doaj.org/article/3c8a99b35be04fe6a7dea590685714e5 kostenfrei http://dx.doi.org/10.1063/1.4997495 kostenfrei https://doaj.org/toc/2158-3226 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 7 2017 9 095212-095212-9
allfields_unstemmed	10.1063/1.4997495 doi (DE-627)DOAJ07267346X (DE-599)DOAJ3c8a99b35be04fe6a7dea590685714e5 DE-627 ger DE-627 rakwb eng QC1-999 T. Kamioka verfasserin aut Analysis of interface workfunction and process-induced damage of reactive-plasma-deposited ITO/SiO2/Si stack 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Workfunction of reactive-plasma deposited indium-tin-oxide (RPD-ITO) at the ITO/SiO2 interface, which is referred as interface workfunction, and the process-induced damage are experimentally extracted for the first time based on capacitance-voltage (C-V) analysis. The estimated interface workfunction value of 4.74 eV for as-deposition condition is about 0.4 eV higher than that in the bulk determined by ultraviolet photoelectron spectroscopy (UPS). The RPD process induces the damage at the Si/SiO2 interface, and the degree of the damage is evaluated as the interface defect density (Dit) to be around 1012 cm-2eV-1. The effects of forming-gas annealing on the interface workfunction and recovery of the damage are also studied. The interface workfunction value once decreases to 4.53 eV by the annealing up to 250 oC and then turns to increase to 4.77 eV after 400 oC annealing. The damage is annihilated by the low-temperature forming-gas annealing at 200 oC. Physics Y. Hayashi verfasserin aut Y. Isogai verfasserin aut K. Nakamura verfasserin aut Y. Ohshita verfasserin aut In AIP Advances AIP Publishing LLC, 2011 7(2017), 9, Seite 095212-095212-9 (DE-627)641391706 (DE-600)2583909-3 21583226 nnns volume:7 year:2017 number:9 pages:095212-095212-9 https://doi.org/10.1063/1.4997495 kostenfrei https://doaj.org/article/3c8a99b35be04fe6a7dea590685714e5 kostenfrei http://dx.doi.org/10.1063/1.4997495 kostenfrei https://doaj.org/toc/2158-3226 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 7 2017 9 095212-095212-9
allfieldsGer	10.1063/1.4997495 doi (DE-627)DOAJ07267346X (DE-599)DOAJ3c8a99b35be04fe6a7dea590685714e5 DE-627 ger DE-627 rakwb eng QC1-999 T. Kamioka verfasserin aut Analysis of interface workfunction and process-induced damage of reactive-plasma-deposited ITO/SiO2/Si stack 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Workfunction of reactive-plasma deposited indium-tin-oxide (RPD-ITO) at the ITO/SiO2 interface, which is referred as interface workfunction, and the process-induced damage are experimentally extracted for the first time based on capacitance-voltage (C-V) analysis. The estimated interface workfunction value of 4.74 eV for as-deposition condition is about 0.4 eV higher than that in the bulk determined by ultraviolet photoelectron spectroscopy (UPS). The RPD process induces the damage at the Si/SiO2 interface, and the degree of the damage is evaluated as the interface defect density (Dit) to be around 1012 cm-2eV-1. The effects of forming-gas annealing on the interface workfunction and recovery of the damage are also studied. The interface workfunction value once decreases to 4.53 eV by the annealing up to 250 oC and then turns to increase to 4.77 eV after 400 oC annealing. The damage is annihilated by the low-temperature forming-gas annealing at 200 oC. Physics Y. Hayashi verfasserin aut Y. Isogai verfasserin aut K. Nakamura verfasserin aut Y. Ohshita verfasserin aut In AIP Advances AIP Publishing LLC, 2011 7(2017), 9, Seite 095212-095212-9 (DE-627)641391706 (DE-600)2583909-3 21583226 nnns volume:7 year:2017 number:9 pages:095212-095212-9 https://doi.org/10.1063/1.4997495 kostenfrei https://doaj.org/article/3c8a99b35be04fe6a7dea590685714e5 kostenfrei http://dx.doi.org/10.1063/1.4997495 kostenfrei https://doaj.org/toc/2158-3226 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 7 2017 9 095212-095212-9
allfieldsSound	10.1063/1.4997495 doi (DE-627)DOAJ07267346X (DE-599)DOAJ3c8a99b35be04fe6a7dea590685714e5 DE-627 ger DE-627 rakwb eng QC1-999 T. Kamioka verfasserin aut Analysis of interface workfunction and process-induced damage of reactive-plasma-deposited ITO/SiO2/Si stack 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Workfunction of reactive-plasma deposited indium-tin-oxide (RPD-ITO) at the ITO/SiO2 interface, which is referred as interface workfunction, and the process-induced damage are experimentally extracted for the first time based on capacitance-voltage (C-V) analysis. The estimated interface workfunction value of 4.74 eV for as-deposition condition is about 0.4 eV higher than that in the bulk determined by ultraviolet photoelectron spectroscopy (UPS). The RPD process induces the damage at the Si/SiO2 interface, and the degree of the damage is evaluated as the interface defect density (Dit) to be around 1012 cm-2eV-1. The effects of forming-gas annealing on the interface workfunction and recovery of the damage are also studied. The interface workfunction value once decreases to 4.53 eV by the annealing up to 250 oC and then turns to increase to 4.77 eV after 400 oC annealing. The damage is annihilated by the low-temperature forming-gas annealing at 200 oC. Physics Y. Hayashi verfasserin aut Y. Isogai verfasserin aut K. Nakamura verfasserin aut Y. Ohshita verfasserin aut In AIP Advances AIP Publishing LLC, 2011 7(2017), 9, Seite 095212-095212-9 (DE-627)641391706 (DE-600)2583909-3 21583226 nnns volume:7 year:2017 number:9 pages:095212-095212-9 https://doi.org/10.1063/1.4997495 kostenfrei https://doaj.org/article/3c8a99b35be04fe6a7dea590685714e5 kostenfrei http://dx.doi.org/10.1063/1.4997495 kostenfrei https://doaj.org/toc/2158-3226 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 7 2017 9 095212-095212-9
language	English
source	In AIP Advances 7(2017), 9, Seite 095212-095212-9 volume:7 year:2017 number:9 pages:095212-095212-9
sourceStr	In AIP Advances 7(2017), 9, Seite 095212-095212-9 volume:7 year:2017 number:9 pages:095212-095212-9
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Physics
isfreeaccess_bool	true
container_title	AIP Advances
authorswithroles_txt_mv	T. Kamioka @@aut@@ Y. Hayashi @@aut@@ Y. Isogai @@aut@@ K. Nakamura @@aut@@ Y. Ohshita @@aut@@
publishDateDaySort_date	2017-01-01T00:00:00Z
hierarchy_top_id	641391706
id	DOAJ07267346X
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ07267346X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230309111335.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230228s2017 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1063/1.4997495</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ07267346X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJ3c8a99b35be04fe6a7dea590685714e5</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QC1-999</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">T. Kamioka</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Analysis of interface workfunction and process-induced damage of reactive-plasma-deposited ITO/SiO2/Si stack</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2017</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Workfunction of reactive-plasma deposited indium-tin-oxide (RPD-ITO) at the ITO/SiO2 interface, which is referred as interface workfunction, and the process-induced damage are experimentally extracted for the first time based on capacitance-voltage (C-V) analysis. The estimated interface workfunction value of 4.74 eV for as-deposition condition is about 0.4 eV higher than that in the bulk determined by ultraviolet photoelectron spectroscopy (UPS). The RPD process induces the damage at the Si/SiO2 interface, and the degree of the damage is evaluated as the interface defect density (Dit) to be around 1012 cm-2eV-1. The effects of forming-gas annealing on the interface workfunction and recovery of the damage are also studied. The interface workfunction value once decreases to 4.53 eV by the annealing up to 250 oC and then turns to increase to 4.77 eV after 400 oC annealing. The damage is annihilated by the low-temperature forming-gas annealing at 200 oC.</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Physics</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Y. Hayashi</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Y. Isogai</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">K. Nakamura</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Y. Ohshita</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">AIP Advances</subfield><subfield code="d">AIP Publishing LLC, 2011</subfield><subfield code="g">7(2017), 9, Seite 095212-095212-9</subfield><subfield code="w">(DE-627)641391706</subfield><subfield code="w">(DE-600)2583909-3</subfield><subfield code="x">21583226</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:7</subfield><subfield code="g">year:2017</subfield><subfield code="g">number:9</subfield><subfield code="g">pages:095212-095212-9</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1063/1.4997495</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/3c8a99b35be04fe6a7dea590685714e5</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://dx.doi.org/10.1063/1.4997495</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2158-3226</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">7</subfield><subfield code="j">2017</subfield><subfield code="e">9</subfield><subfield code="h">095212-095212-9</subfield></datafield></record></collection>
callnumber-first	Q - Science
author	T. Kamioka
spellingShingle	T. Kamioka misc QC1-999 misc Physics Analysis of interface workfunction and process-induced damage of reactive-plasma-deposited ITO/SiO2/Si stack
authorStr	T. Kamioka
ppnlink_with_tag_str_mv	@@773@@(DE-627)641391706
format	electronic Article
delete_txt_mv	keep
author_role	aut aut aut aut aut
collection	DOAJ
remote_str	true
callnumber-label	QC1-999
illustrated	Not Illustrated
issn	21583226
topic_title	QC1-999 Analysis of interface workfunction and process-induced damage of reactive-plasma-deposited ITO/SiO2/Si stack
topic	misc QC1-999 misc Physics
topic_unstemmed	misc QC1-999 misc Physics
topic_browse	misc QC1-999 misc Physics
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	cr
hierarchy_parent_title	AIP Advances
hierarchy_parent_id	641391706
hierarchy_top_title	AIP Advances
isfreeaccess_txt	true
familylinks_str_mv	(DE-627)641391706 (DE-600)2583909-3
title	Analysis of interface workfunction and process-induced damage of reactive-plasma-deposited ITO/SiO2/Si stack
ctrlnum	(DE-627)DOAJ07267346X (DE-599)DOAJ3c8a99b35be04fe6a7dea590685714e5
title_full	Analysis of interface workfunction and process-induced damage of reactive-plasma-deposited ITO/SiO2/Si stack
author_sort	T. Kamioka
journal	AIP Advances
journalStr	AIP Advances
callnumber-first-code	Q
lang_code	eng
isOA_bool	true
recordtype	marc
publishDateSort	2017
contenttype_str_mv	txt
container_start_page	095212
author_browse	T. Kamioka Y. Hayashi Y. Isogai K. Nakamura Y. Ohshita
container_volume	7
class	QC1-999
format_se	Elektronische Aufsätze
author-letter	T. Kamioka
doi_str_mv	10.1063/1.4997495
author2-role	verfasserin
title_sort	analysis of interface workfunction and process-induced damage of reactive-plasma-deposited ito/sio2/si stack
callnumber	QC1-999
title_auth	Analysis of interface workfunction and process-induced damage of reactive-plasma-deposited ITO/SiO2/Si stack
abstract	Workfunction of reactive-plasma deposited indium-tin-oxide (RPD-ITO) at the ITO/SiO2 interface, which is referred as interface workfunction, and the process-induced damage are experimentally extracted for the first time based on capacitance-voltage (C-V) analysis. The estimated interface workfunction value of 4.74 eV for as-deposition condition is about 0.4 eV higher than that in the bulk determined by ultraviolet photoelectron spectroscopy (UPS). The RPD process induces the damage at the Si/SiO2 interface, and the degree of the damage is evaluated as the interface defect density (Dit) to be around 1012 cm-2eV-1. The effects of forming-gas annealing on the interface workfunction and recovery of the damage are also studied. The interface workfunction value once decreases to 4.53 eV by the annealing up to 250 oC and then turns to increase to 4.77 eV after 400 oC annealing. The damage is annihilated by the low-temperature forming-gas annealing at 200 oC.
abstractGer	Workfunction of reactive-plasma deposited indium-tin-oxide (RPD-ITO) at the ITO/SiO2 interface, which is referred as interface workfunction, and the process-induced damage are experimentally extracted for the first time based on capacitance-voltage (C-V) analysis. The estimated interface workfunction value of 4.74 eV for as-deposition condition is about 0.4 eV higher than that in the bulk determined by ultraviolet photoelectron spectroscopy (UPS). The RPD process induces the damage at the Si/SiO2 interface, and the degree of the damage is evaluated as the interface defect density (Dit) to be around 1012 cm-2eV-1. The effects of forming-gas annealing on the interface workfunction and recovery of the damage are also studied. The interface workfunction value once decreases to 4.53 eV by the annealing up to 250 oC and then turns to increase to 4.77 eV after 400 oC annealing. The damage is annihilated by the low-temperature forming-gas annealing at 200 oC.
abstract_unstemmed	Workfunction of reactive-plasma deposited indium-tin-oxide (RPD-ITO) at the ITO/SiO2 interface, which is referred as interface workfunction, and the process-induced damage are experimentally extracted for the first time based on capacitance-voltage (C-V) analysis. The estimated interface workfunction value of 4.74 eV for as-deposition condition is about 0.4 eV higher than that in the bulk determined by ultraviolet photoelectron spectroscopy (UPS). The RPD process induces the damage at the Si/SiO2 interface, and the degree of the damage is evaluated as the interface defect density (Dit) to be around 1012 cm-2eV-1. The effects of forming-gas annealing on the interface workfunction and recovery of the damage are also studied. The interface workfunction value once decreases to 4.53 eV by the annealing up to 250 oC and then turns to increase to 4.77 eV after 400 oC annealing. The damage is annihilated by the low-temperature forming-gas annealing at 200 oC.
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700
container_issue	9
title_short	Analysis of interface workfunction and process-induced damage of reactive-plasma-deposited ITO/SiO2/Si stack
url	https://doi.org/10.1063/1.4997495 https://doaj.org/article/3c8a99b35be04fe6a7dea590685714e5 http://dx.doi.org/10.1063/1.4997495 https://doaj.org/toc/2158-3226
remote_bool	true
author2	Y. Hayashi Y. Isogai K. Nakamura Y. Ohshita
author2Str	Y. Hayashi Y. Isogai K. Nakamura Y. Ohshita
ppnlink	641391706
callnumber-subject	QC - Physics
mediatype_str_mv	c
isOA_txt	true
hochschulschrift_bool	false
doi_str	10.1063/1.4997495
callnumber-a	QC1-999
up_date	2024-07-03T13:25:53.890Z
_version_	1803564512861749248
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ07267346X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230309111335.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230228s2017 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1063/1.4997495</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ07267346X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJ3c8a99b35be04fe6a7dea590685714e5</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QC1-999</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">T. Kamioka</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Analysis of interface workfunction and process-induced damage of reactive-plasma-deposited ITO/SiO2/Si stack</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2017</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Workfunction of reactive-plasma deposited indium-tin-oxide (RPD-ITO) at the ITO/SiO2 interface, which is referred as interface workfunction, and the process-induced damage are experimentally extracted for the first time based on capacitance-voltage (C-V) analysis. The estimated interface workfunction value of 4.74 eV for as-deposition condition is about 0.4 eV higher than that in the bulk determined by ultraviolet photoelectron spectroscopy (UPS). The RPD process induces the damage at the Si/SiO2 interface, and the degree of the damage is evaluated as the interface defect density (Dit) to be around 1012 cm-2eV-1. The effects of forming-gas annealing on the interface workfunction and recovery of the damage are also studied. The interface workfunction value once decreases to 4.53 eV by the annealing up to 250 oC and then turns to increase to 4.77 eV after 400 oC annealing. The damage is annihilated by the low-temperature forming-gas annealing at 200 oC.</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Physics</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Y. Hayashi</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Y. Isogai</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">K. Nakamura</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Y. Ohshita</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">AIP Advances</subfield><subfield code="d">AIP Publishing LLC, 2011</subfield><subfield code="g">7(2017), 9, Seite 095212-095212-9</subfield><subfield code="w">(DE-627)641391706</subfield><subfield code="w">(DE-600)2583909-3</subfield><subfield code="x">21583226</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:7</subfield><subfield code="g">year:2017</subfield><subfield code="g">number:9</subfield><subfield code="g">pages:095212-095212-9</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1063/1.4997495</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/3c8a99b35be04fe6a7dea590685714e5</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://dx.doi.org/10.1063/1.4997495</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2158-3226</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">7</subfield><subfield code="j">2017</subfield><subfield code="e">9</subfield><subfield code="h">095212-095212-9</subfield></datafield></record></collection>
score	7.399646

Nicht das Richtige dabei?

Schreiben Sie uns!

Analysis of interface workfunction and process-induced damage of reactive-plasma-deposited ITO/SiO2/Si stack

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?