Thin-film electronics based on all-2D van der Waals heterostructures

Two-dimensional (2D) layered materials including metal, semiconductor, and insulator have received extensive attention in recent years. The weak van-der-Waals (vdW) interactions between 2D materials layers enable them to isolate monolayers and restack into artificial 2D vdW heterostructures in the d...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Xinling Liu [verfasserIn] Xiaomin Yang [verfasserIn] Weihui Sang [verfasserIn] Hai Huang [verfasserIn] Wenwu Li [verfasserIn] Yen-Fu Lin [verfasserIn] Junhao Chu [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2021

Schlagwörter:	van-der-waals interactions all-2d heterostructure thin-film electronics field-effect transistors (fets) photodetectors

Übergeordnetes Werk:	In: Journal of Information Display - Taylor & Francis Group, 2018, 22(2021), 4, Seite 231-245
Übergeordnetes Werk:	volume:22 ; year:2021 ; number:4 ; pages:231-245

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc Journal toc

DOI / URN:	10.1080/15980316.2021.1982782

Katalog-ID:	DOAJ073706159

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spelling	10.1080/15980316.2021.1982782 doi (DE-627)DOAJ073706159 (DE-599)DOAJ423fb7f621d449ef80f7d58aafce9bc1 DE-627 ger DE-627 rakwb eng TK7885-7895 Xinling Liu verfasserin aut Thin-film electronics based on all-2D van der Waals heterostructures 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Two-dimensional (2D) layered materials including metal, semiconductor, and insulator have received extensive attention in recent years. The weak van-der-Waals (vdW) interactions between 2D materials layers enable them to isolate monolayers and restack into artificial 2D vdW heterostructures in the desired sequence. These assembled all-2D vdW heterostructures are promising platforms for fabricating next-generation electronics as well as optoelectronics. In particular, the all-2D vdW heterostructure devices composed entirely of 2D layered material have received extensive attention due to their natural thickness, atomically sharp heterointerfaces, and excellent mechanical flexibility. Herein, we firstly introduce 2D vdW heterostructures and their preparation methods. Secondly, the recent progress of field-effect transistors (FETs) and photodetectors based on all-2D vdW heterostructures are summarized. Finally, we discuss some challenges of all-2D vdW heterostructure-based devices for practical applications and offer personal perspectives toward the future development of thin-film electronics. van-der-waals interactions all-2d heterostructure thin-film electronics field-effect transistors (fets) photodetectors Computer engineering. Computer hardware Xiaomin Yang verfasserin aut Weihui Sang verfasserin aut Hai Huang verfasserin aut Wenwu Li verfasserin aut Yen-Fu Lin verfasserin aut Junhao Chu verfasserin aut In Journal of Information Display Taylor & Francis Group, 2018 22(2021), 4, Seite 231-245 (DE-627)630996156 (DE-600)2563361-2 21581606 nnns volume:22 year:2021 number:4 pages:231-245 https://doi.org/10.1080/15980316.2021.1982782 kostenfrei https://doaj.org/article/423fb7f621d449ef80f7d58aafce9bc1 kostenfrei http://dx.doi.org/10.1080/15980316.2021.1982782 kostenfrei https://doaj.org/toc/1598-0316 Journal toc kostenfrei https://doaj.org/toc/2158-1606 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 22 2021 4 231-245
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callnumber-first	T - Technology
author	Xinling Liu
spellingShingle	Xinling Liu misc TK7885-7895 misc van-der-waals interactions misc all-2d heterostructure misc thin-film electronics misc field-effect transistors (fets) misc photodetectors misc Computer engineering. Computer hardware Thin-film electronics based on all-2D van der Waals heterostructures
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topic_title	TK7885-7895 Thin-film electronics based on all-2D van der Waals heterostructures van-der-waals interactions all-2d heterostructure thin-film electronics field-effect transistors (fets) photodetectors
topic	misc TK7885-7895 misc van-der-waals interactions misc all-2d heterostructure misc thin-film electronics misc field-effect transistors (fets) misc photodetectors misc Computer engineering. Computer hardware
topic_unstemmed	misc TK7885-7895 misc van-der-waals interactions misc all-2d heterostructure misc thin-film electronics misc field-effect transistors (fets) misc photodetectors misc Computer engineering. Computer hardware
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title	Thin-film electronics based on all-2D van der Waals heterostructures
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title_full	Thin-film electronics based on all-2D van der Waals heterostructures
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title_sort	thin-film electronics based on all-2d van der waals heterostructures
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title_auth	Thin-film electronics based on all-2D van der Waals heterostructures
abstract	Two-dimensional (2D) layered materials including metal, semiconductor, and insulator have received extensive attention in recent years. The weak van-der-Waals (vdW) interactions between 2D materials layers enable them to isolate monolayers and restack into artificial 2D vdW heterostructures in the desired sequence. These assembled all-2D vdW heterostructures are promising platforms for fabricating next-generation electronics as well as optoelectronics. In particular, the all-2D vdW heterostructure devices composed entirely of 2D layered material have received extensive attention due to their natural thickness, atomically sharp heterointerfaces, and excellent mechanical flexibility. Herein, we firstly introduce 2D vdW heterostructures and their preparation methods. Secondly, the recent progress of field-effect transistors (FETs) and photodetectors based on all-2D vdW heterostructures are summarized. Finally, we discuss some challenges of all-2D vdW heterostructure-based devices for practical applications and offer personal perspectives toward the future development of thin-film electronics.
abstractGer	Two-dimensional (2D) layered materials including metal, semiconductor, and insulator have received extensive attention in recent years. The weak van-der-Waals (vdW) interactions between 2D materials layers enable them to isolate monolayers and restack into artificial 2D vdW heterostructures in the desired sequence. These assembled all-2D vdW heterostructures are promising platforms for fabricating next-generation electronics as well as optoelectronics. In particular, the all-2D vdW heterostructure devices composed entirely of 2D layered material have received extensive attention due to their natural thickness, atomically sharp heterointerfaces, and excellent mechanical flexibility. Herein, we firstly introduce 2D vdW heterostructures and their preparation methods. Secondly, the recent progress of field-effect transistors (FETs) and photodetectors based on all-2D vdW heterostructures are summarized. Finally, we discuss some challenges of all-2D vdW heterostructure-based devices for practical applications and offer personal perspectives toward the future development of thin-film electronics.
abstract_unstemmed	Two-dimensional (2D) layered materials including metal, semiconductor, and insulator have received extensive attention in recent years. The weak van-der-Waals (vdW) interactions between 2D materials layers enable them to isolate monolayers and restack into artificial 2D vdW heterostructures in the desired sequence. These assembled all-2D vdW heterostructures are promising platforms for fabricating next-generation electronics as well as optoelectronics. In particular, the all-2D vdW heterostructure devices composed entirely of 2D layered material have received extensive attention due to their natural thickness, atomically sharp heterointerfaces, and excellent mechanical flexibility. Herein, we firstly introduce 2D vdW heterostructures and their preparation methods. Secondly, the recent progress of field-effect transistors (FETs) and photodetectors based on all-2D vdW heterostructures are summarized. Finally, we discuss some challenges of all-2D vdW heterostructure-based devices for practical applications and offer personal perspectives toward the future development of thin-film electronics.
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title_short	Thin-film electronics based on all-2D van der Waals heterostructures
url	https://doi.org/10.1080/15980316.2021.1982782 https://doaj.org/article/423fb7f621d449ef80f7d58aafce9bc1 http://dx.doi.org/10.1080/15980316.2021.1982782 https://doaj.org/toc/1598-0316 https://doaj.org/toc/2158-1606
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author2	Xiaomin Yang Weihui Sang Hai Huang Wenwu Li Yen-Fu Lin Junhao Chu
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doi_str	10.1080/15980316.2021.1982782
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up_date	2024-07-03T19:10:50.572Z
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Thin-film electronics based on all-2D van der Waals heterostructures

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