Ultrasensitive negative capacitance phototransistors

Here, the authors report ultrasensitive negative capacitance phototransistors based on MoS2 regulated by a layer of ferroelectric hafnium zirconium oxide film to demonstrate a hysteresis-free ultra-steep subthreshold slope of 17.64 mV/dec and specific detectivity of 4.75 × 1014 cm Hz1/2 W−1 at room...
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Autor*in:	Luqi Tu [verfasserIn] Rongrong Cao [verfasserIn] Xudong Wang [verfasserIn] Yan Chen [verfasserIn] Shuaiqin Wu [verfasserIn] Fang Wang [verfasserIn] Zhen Wang [verfasserIn] Hong Shen [verfasserIn] Tie Lin [verfasserIn] Peng Zhou [verfasserIn] Xiangjian Meng [verfasserIn] Weida Hu [verfasserIn] Qi Liu [verfasserIn] Jianlu Wang [verfasserIn] Ming Liu [verfasserIn] Junhao Chu [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2020

Übergeordnetes Werk:	In: Nature Communications - Nature Portfolio, 2016, 11(2020), 1, Seite 8
Übergeordnetes Werk:	volume:11 ; year:2020 ; number:1 ; pages:8

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.1038/s41467-019-13769-z

Katalog-ID:	DOAJ075361361

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allfields	10.1038/s41467-019-13769-z doi (DE-627)DOAJ075361361 (DE-599)DOAJ91e97539611e4b04ad2a7430b9a9453a DE-627 ger DE-627 rakwb eng Luqi Tu verfasserin aut Ultrasensitive negative capacitance phototransistors 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Here, the authors report ultrasensitive negative capacitance phototransistors based on MoS2 regulated by a layer of ferroelectric hafnium zirconium oxide film to demonstrate a hysteresis-free ultra-steep subthreshold slope of 17.64 mV/dec and specific detectivity of 4.75 × 1014 cm Hz1/2 W−1 at room temperature. Science Q Rongrong Cao verfasserin aut Xudong Wang verfasserin aut Yan Chen verfasserin aut Shuaiqin Wu verfasserin aut Fang Wang verfasserin aut Zhen Wang verfasserin aut Hong Shen verfasserin aut Tie Lin verfasserin aut Peng Zhou verfasserin aut Xiangjian Meng verfasserin aut Weida Hu verfasserin aut Qi Liu verfasserin aut Jianlu Wang verfasserin aut Ming Liu verfasserin aut Junhao Chu verfasserin aut In Nature Communications Nature Portfolio, 2016 11(2020), 1, Seite 8 (DE-627)626457688 (DE-600)2553671-0 20411723 nnns volume:11 year:2020 number:1 pages:8 https://doi.org/10.1038/s41467-019-13769-z kostenfrei https://doaj.org/article/91e97539611e4b04ad2a7430b9a9453a kostenfrei https://doi.org/10.1038/s41467-019-13769-z kostenfrei https://doaj.org/toc/2041-1723 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_211 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2110 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2020 1 8
spelling	10.1038/s41467-019-13769-z doi (DE-627)DOAJ075361361 (DE-599)DOAJ91e97539611e4b04ad2a7430b9a9453a DE-627 ger DE-627 rakwb eng Luqi Tu verfasserin aut Ultrasensitive negative capacitance phototransistors 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Here, the authors report ultrasensitive negative capacitance phototransistors based on MoS2 regulated by a layer of ferroelectric hafnium zirconium oxide film to demonstrate a hysteresis-free ultra-steep subthreshold slope of 17.64 mV/dec and specific detectivity of 4.75 × 1014 cm Hz1/2 W−1 at room temperature. Science Q Rongrong Cao verfasserin aut Xudong Wang verfasserin aut Yan Chen verfasserin aut Shuaiqin Wu verfasserin aut Fang Wang verfasserin aut Zhen Wang verfasserin aut Hong Shen verfasserin aut Tie Lin verfasserin aut Peng Zhou verfasserin aut Xiangjian Meng verfasserin aut Weida Hu verfasserin aut Qi Liu verfasserin aut Jianlu Wang verfasserin aut Ming Liu verfasserin aut Junhao Chu verfasserin aut In Nature Communications Nature Portfolio, 2016 11(2020), 1, Seite 8 (DE-627)626457688 (DE-600)2553671-0 20411723 nnns volume:11 year:2020 number:1 pages:8 https://doi.org/10.1038/s41467-019-13769-z kostenfrei https://doaj.org/article/91e97539611e4b04ad2a7430b9a9453a kostenfrei https://doi.org/10.1038/s41467-019-13769-z kostenfrei https://doaj.org/toc/2041-1723 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_211 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2110 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2020 1 8
allfields_unstemmed	10.1038/s41467-019-13769-z doi (DE-627)DOAJ075361361 (DE-599)DOAJ91e97539611e4b04ad2a7430b9a9453a DE-627 ger DE-627 rakwb eng Luqi Tu verfasserin aut Ultrasensitive negative capacitance phototransistors 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Here, the authors report ultrasensitive negative capacitance phototransistors based on MoS2 regulated by a layer of ferroelectric hafnium zirconium oxide film to demonstrate a hysteresis-free ultra-steep subthreshold slope of 17.64 mV/dec and specific detectivity of 4.75 × 1014 cm Hz1/2 W−1 at room temperature. Science Q Rongrong Cao verfasserin aut Xudong Wang verfasserin aut Yan Chen verfasserin aut Shuaiqin Wu verfasserin aut Fang Wang verfasserin aut Zhen Wang verfasserin aut Hong Shen verfasserin aut Tie Lin verfasserin aut Peng Zhou verfasserin aut Xiangjian Meng verfasserin aut Weida Hu verfasserin aut Qi Liu verfasserin aut Jianlu Wang verfasserin aut Ming Liu verfasserin aut Junhao Chu verfasserin aut In Nature Communications Nature Portfolio, 2016 11(2020), 1, Seite 8 (DE-627)626457688 (DE-600)2553671-0 20411723 nnns volume:11 year:2020 number:1 pages:8 https://doi.org/10.1038/s41467-019-13769-z kostenfrei https://doaj.org/article/91e97539611e4b04ad2a7430b9a9453a kostenfrei https://doi.org/10.1038/s41467-019-13769-z kostenfrei https://doaj.org/toc/2041-1723 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_211 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2110 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2020 1 8
allfieldsGer	10.1038/s41467-019-13769-z doi (DE-627)DOAJ075361361 (DE-599)DOAJ91e97539611e4b04ad2a7430b9a9453a DE-627 ger DE-627 rakwb eng Luqi Tu verfasserin aut Ultrasensitive negative capacitance phototransistors 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Here, the authors report ultrasensitive negative capacitance phototransistors based on MoS2 regulated by a layer of ferroelectric hafnium zirconium oxide film to demonstrate a hysteresis-free ultra-steep subthreshold slope of 17.64 mV/dec and specific detectivity of 4.75 × 1014 cm Hz1/2 W−1 at room temperature. Science Q Rongrong Cao verfasserin aut Xudong Wang verfasserin aut Yan Chen verfasserin aut Shuaiqin Wu verfasserin aut Fang Wang verfasserin aut Zhen Wang verfasserin aut Hong Shen verfasserin aut Tie Lin verfasserin aut Peng Zhou verfasserin aut Xiangjian Meng verfasserin aut Weida Hu verfasserin aut Qi Liu verfasserin aut Jianlu Wang verfasserin aut Ming Liu verfasserin aut Junhao Chu verfasserin aut In Nature Communications Nature Portfolio, 2016 11(2020), 1, Seite 8 (DE-627)626457688 (DE-600)2553671-0 20411723 nnns volume:11 year:2020 number:1 pages:8 https://doi.org/10.1038/s41467-019-13769-z kostenfrei https://doaj.org/article/91e97539611e4b04ad2a7430b9a9453a kostenfrei https://doi.org/10.1038/s41467-019-13769-z kostenfrei https://doaj.org/toc/2041-1723 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_211 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2110 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2020 1 8
allfieldsSound	10.1038/s41467-019-13769-z doi (DE-627)DOAJ075361361 (DE-599)DOAJ91e97539611e4b04ad2a7430b9a9453a DE-627 ger DE-627 rakwb eng Luqi Tu verfasserin aut Ultrasensitive negative capacitance phototransistors 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Here, the authors report ultrasensitive negative capacitance phototransistors based on MoS2 regulated by a layer of ferroelectric hafnium zirconium oxide film to demonstrate a hysteresis-free ultra-steep subthreshold slope of 17.64 mV/dec and specific detectivity of 4.75 × 1014 cm Hz1/2 W−1 at room temperature. Science Q Rongrong Cao verfasserin aut Xudong Wang verfasserin aut Yan Chen verfasserin aut Shuaiqin Wu verfasserin aut Fang Wang verfasserin aut Zhen Wang verfasserin aut Hong Shen verfasserin aut Tie Lin verfasserin aut Peng Zhou verfasserin aut Xiangjian Meng verfasserin aut Weida Hu verfasserin aut Qi Liu verfasserin aut Jianlu Wang verfasserin aut Ming Liu verfasserin aut Junhao Chu verfasserin aut In Nature Communications Nature Portfolio, 2016 11(2020), 1, Seite 8 (DE-627)626457688 (DE-600)2553671-0 20411723 nnns volume:11 year:2020 number:1 pages:8 https://doi.org/10.1038/s41467-019-13769-z kostenfrei https://doaj.org/article/91e97539611e4b04ad2a7430b9a9453a kostenfrei https://doi.org/10.1038/s41467-019-13769-z kostenfrei https://doaj.org/toc/2041-1723 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_211 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2110 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2020 1 8
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author	Luqi Tu
spellingShingle	Luqi Tu misc Science misc Q Ultrasensitive negative capacitance phototransistors
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title	Ultrasensitive negative capacitance phototransistors
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title_sort	ultrasensitive negative capacitance phototransistors
title_auth	Ultrasensitive negative capacitance phototransistors
abstract	Here, the authors report ultrasensitive negative capacitance phototransistors based on MoS2 regulated by a layer of ferroelectric hafnium zirconium oxide film to demonstrate a hysteresis-free ultra-steep subthreshold slope of 17.64 mV/dec and specific detectivity of 4.75 × 1014 cm Hz1/2 W−1 at room temperature.
abstractGer	Here, the authors report ultrasensitive negative capacitance phototransistors based on MoS2 regulated by a layer of ferroelectric hafnium zirconium oxide film to demonstrate a hysteresis-free ultra-steep subthreshold slope of 17.64 mV/dec and specific detectivity of 4.75 × 1014 cm Hz1/2 W−1 at room temperature.
abstract_unstemmed	Here, the authors report ultrasensitive negative capacitance phototransistors based on MoS2 regulated by a layer of ferroelectric hafnium zirconium oxide film to demonstrate a hysteresis-free ultra-steep subthreshold slope of 17.64 mV/dec and specific detectivity of 4.75 × 1014 cm Hz1/2 W−1 at room temperature.
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title_short	Ultrasensitive negative capacitance phototransistors
url	https://doi.org/10.1038/s41467-019-13769-z https://doaj.org/article/91e97539611e4b04ad2a7430b9a9453a https://doaj.org/toc/2041-1723
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