Faradaic junction and isoenergetic charge transfer mechanism on semiconductor/semiconductor interfaces
Energy band alignment theory is used to understand interface charge transfer in semiconductor/semiconductor junctions but many abnormal results cannot be well explained. Here, the authors demonstrate a Faradaic junction theory with isoenergetic charge transfer at semiconductor/semiconductor interfac...
Ausführliche Beschreibung
Autor*in: |
Mingzhi Chen [verfasserIn] Hongzheng Dong [verfasserIn] Mengfan Xue [verfasserIn] Chunsheng Yang [verfasserIn] Pin Wang [verfasserIn] Yanliang Yang [verfasserIn] Heng Zhu [verfasserIn] Congping Wu [verfasserIn] Yingfang Yao [verfasserIn] Wenjun Luo [verfasserIn] Zhigang Zou [verfasserIn] |
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E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2021 |
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Übergeordnetes Werk: |
In: Nature Communications - Nature Portfolio, 2016, 12(2021), 1, Seite 8 |
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Übergeordnetes Werk: |
volume:12 ; year:2021 ; number:1 ; pages:8 |
Links: |
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DOI / URN: |
10.1038/s41467-021-26661-6 |
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DOAJ075792702 |
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10.1038/s41467-021-26661-6 doi (DE-627)DOAJ075792702 (DE-599)DOAJcb73cf62d12b43b8b476e0cf1383983b DE-627 ger DE-627 rakwb eng Mingzhi Chen verfasserin aut Faradaic junction and isoenergetic charge transfer mechanism on semiconductor/semiconductor interfaces 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Energy band alignment theory is used to understand interface charge transfer in semiconductor/semiconductor junctions but many abnormal results cannot be well explained. Here, the authors demonstrate a Faradaic junction theory with isoenergetic charge transfer at semiconductor/semiconductor interfaces to explain these abnormal results. Science Q Hongzheng Dong verfasserin aut Mengfan Xue verfasserin aut Chunsheng Yang verfasserin aut Pin Wang verfasserin aut Yanliang Yang verfasserin aut Heng Zhu verfasserin aut Congping Wu verfasserin aut Yingfang Yao verfasserin aut Wenjun Luo verfasserin aut Zhigang Zou verfasserin aut In Nature Communications Nature Portfolio, 2016 12(2021), 1, Seite 8 (DE-627)626457688 (DE-600)2553671-0 20411723 nnns volume:12 year:2021 number:1 pages:8 https://doi.org/10.1038/s41467-021-26661-6 kostenfrei https://doaj.org/article/cb73cf62d12b43b8b476e0cf1383983b kostenfrei https://doi.org/10.1038/s41467-021-26661-6 kostenfrei https://doaj.org/toc/2041-1723 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_211 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2110 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2021 1 8 |
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10.1038/s41467-021-26661-6 doi (DE-627)DOAJ075792702 (DE-599)DOAJcb73cf62d12b43b8b476e0cf1383983b DE-627 ger DE-627 rakwb eng Mingzhi Chen verfasserin aut Faradaic junction and isoenergetic charge transfer mechanism on semiconductor/semiconductor interfaces 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Energy band alignment theory is used to understand interface charge transfer in semiconductor/semiconductor junctions but many abnormal results cannot be well explained. Here, the authors demonstrate a Faradaic junction theory with isoenergetic charge transfer at semiconductor/semiconductor interfaces to explain these abnormal results. Science Q Hongzheng Dong verfasserin aut Mengfan Xue verfasserin aut Chunsheng Yang verfasserin aut Pin Wang verfasserin aut Yanliang Yang verfasserin aut Heng Zhu verfasserin aut Congping Wu verfasserin aut Yingfang Yao verfasserin aut Wenjun Luo verfasserin aut Zhigang Zou verfasserin aut In Nature Communications Nature Portfolio, 2016 12(2021), 1, Seite 8 (DE-627)626457688 (DE-600)2553671-0 20411723 nnns volume:12 year:2021 number:1 pages:8 https://doi.org/10.1038/s41467-021-26661-6 kostenfrei https://doaj.org/article/cb73cf62d12b43b8b476e0cf1383983b kostenfrei https://doi.org/10.1038/s41467-021-26661-6 kostenfrei https://doaj.org/toc/2041-1723 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_211 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2110 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2021 1 8 |
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10.1038/s41467-021-26661-6 doi (DE-627)DOAJ075792702 (DE-599)DOAJcb73cf62d12b43b8b476e0cf1383983b DE-627 ger DE-627 rakwb eng Mingzhi Chen verfasserin aut Faradaic junction and isoenergetic charge transfer mechanism on semiconductor/semiconductor interfaces 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Energy band alignment theory is used to understand interface charge transfer in semiconductor/semiconductor junctions but many abnormal results cannot be well explained. Here, the authors demonstrate a Faradaic junction theory with isoenergetic charge transfer at semiconductor/semiconductor interfaces to explain these abnormal results. Science Q Hongzheng Dong verfasserin aut Mengfan Xue verfasserin aut Chunsheng Yang verfasserin aut Pin Wang verfasserin aut Yanliang Yang verfasserin aut Heng Zhu verfasserin aut Congping Wu verfasserin aut Yingfang Yao verfasserin aut Wenjun Luo verfasserin aut Zhigang Zou verfasserin aut In Nature Communications Nature Portfolio, 2016 12(2021), 1, Seite 8 (DE-627)626457688 (DE-600)2553671-0 20411723 nnns volume:12 year:2021 number:1 pages:8 https://doi.org/10.1038/s41467-021-26661-6 kostenfrei https://doaj.org/article/cb73cf62d12b43b8b476e0cf1383983b kostenfrei https://doi.org/10.1038/s41467-021-26661-6 kostenfrei https://doaj.org/toc/2041-1723 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_211 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2110 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2021 1 8 |
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10.1038/s41467-021-26661-6 doi (DE-627)DOAJ075792702 (DE-599)DOAJcb73cf62d12b43b8b476e0cf1383983b DE-627 ger DE-627 rakwb eng Mingzhi Chen verfasserin aut Faradaic junction and isoenergetic charge transfer mechanism on semiconductor/semiconductor interfaces 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Energy band alignment theory is used to understand interface charge transfer in semiconductor/semiconductor junctions but many abnormal results cannot be well explained. Here, the authors demonstrate a Faradaic junction theory with isoenergetic charge transfer at semiconductor/semiconductor interfaces to explain these abnormal results. Science Q Hongzheng Dong verfasserin aut Mengfan Xue verfasserin aut Chunsheng Yang verfasserin aut Pin Wang verfasserin aut Yanliang Yang verfasserin aut Heng Zhu verfasserin aut Congping Wu verfasserin aut Yingfang Yao verfasserin aut Wenjun Luo verfasserin aut Zhigang Zou verfasserin aut In Nature Communications Nature Portfolio, 2016 12(2021), 1, Seite 8 (DE-627)626457688 (DE-600)2553671-0 20411723 nnns volume:12 year:2021 number:1 pages:8 https://doi.org/10.1038/s41467-021-26661-6 kostenfrei https://doaj.org/article/cb73cf62d12b43b8b476e0cf1383983b kostenfrei https://doi.org/10.1038/s41467-021-26661-6 kostenfrei https://doaj.org/toc/2041-1723 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_211 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2110 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2021 1 8 |
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Energy band alignment theory is used to understand interface charge transfer in semiconductor/semiconductor junctions but many abnormal results cannot be well explained. Here, the authors demonstrate a Faradaic junction theory with isoenergetic charge transfer at semiconductor/semiconductor interfaces to explain these abnormal results. |
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Energy band alignment theory is used to understand interface charge transfer in semiconductor/semiconductor junctions but many abnormal results cannot be well explained. Here, the authors demonstrate a Faradaic junction theory with isoenergetic charge transfer at semiconductor/semiconductor interfaces to explain these abnormal results. |
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score |
7.4017324 |